Electrical and thermal conduction in atomic layer deposition nanobridges down to 7 nm thickness.
While the literature is rich with data for the electrical behavior of nanotransistors based on semiconductor nanowires and carbon nanotubes, few data are available for ultrascaled metal interconnects that will be demanded by these devices. Atomic layer deposition (ALD), which uses a sequence of self-limiting surface reactions to achieve high-quality nanolayers, provides an unique opportunity to study the limits of electrical and thermal conduction in metal interconnects. This work measures and interprets the electrical and thermal conductivities of free-standing platinum films of thickness 7.3, 9.8, and 12.1 nm in the temperature range from 50 to 320 K. Conductivity data for the 7.3 nm bridge are reduced by 77.8% (electrical) and 66.3% (thermal) compared to bulk values due to electron scattering at material and grain boundaries. The measurement results indicate that the contribution of phonon conduction is significant in the total thermal conductivity of the ALD films.
Department of Mechanical Engineering, Stanford University, Stanford, California 94305, USA. yoneoka@alumni.stanford.edu
Shingo
S
Yoneoka
Jaeho
J
Lee
Matthieu
M
Liger
Gary
G
Yama
Takashi
T
Kodama
Marika
M
Gunji
J
J
Provine
Roger T
RT
Howe
Kenneth E
KE
Goodson
Thomas W
TW
Kenny
D004553:Electric Conductivity; D008567:Membranes, Artificial; D053768:Metal Nanoparticles / Q000737:chemistry*; D010316:Particle Size; D010984:Platinum / Q000737:chemistry*; D013499:Surface Properties; D013814:Thermal Conductivity
D008567:Membranes, Artificial; D010984:Platinum