Exciton scattering mechanism in a single semiconducting MgZnO nanorod.
Excitonic phenomena, such as excitonic absorption and emission, have been used in many photonic and optoelectronic semiconductor device applications. As the sizes of these nanoscale materials have approached to exciton diffusion lengths in semiconductors, a fundamental understanding of exciton transport in semiconductors has become imperative. We present exciton transport in a single MgZnO nanorod in the spatiotemporal regime with several nanometer-scale spatial resolution and several tens of picosecond temporal resolution. This study was performed using temperature-dependent cathodoluminescence and time-resolved photoluminescence spectroscopies. The exciton diffusion length in the MgZnO nanorod decreased from 100 to 70 nm with increasing temperature in the range of 5 and 80 K. The results obtained for the temperature dependence of exciton diffusion length and luminescence lifetime revealed that the dominant exciton scattering mechanism in MgZnO nanorod is exciton-phonon assisted piezoelectric field scattering.
National Creative Research Initiative Center for Semiconductor Nanorods and Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea. jyoo@lanl.gov
Jinkyoung
J
Yoo
Le Si
le S
Dang
Bonghwan
B
Chon
Taiha
T
Joo
Gyu-Chul
GC
Yi
D008163:Luminescent Measurements; D008274:Magnesium / Q000737:chemistry*; D043942:Nanotubes / Q000737:chemistry*; D010100:Oxygen / Q000737:chemistry*; D012666:Semiconductors; D013696:Temperature; D015032:Zinc / Q000737:chemistry*
D008274:Magnesium; D015032:Zinc; D010100:Oxygen