Electrically conducting nanopatterns formed by chemical e-beam lithography via gold nanoparticle seeds.
We report the formation of thiol nanopatterns on SAM covered silicon wafers by converting sulfonic acid head groups via e-beam lithography. These thiol groups act as binding sites for gold nanoparticles, which can be enhanced to form electrically conducting nanostructures. This approach serves as a proof-of-concept for the combination of top-down and bottom-up processes for the generation of electrical devices on silicon.
Institute of Inorganic Chemistry and JARA-Fundamentals of Future Information Technology, RWTH Aachen University , 52074 Aachen, Germany.
Patrick A
PA
Schaal
Astrid
A
Besmehn
Eva
E
Maynicke
Michael
M
Noyong
Bernd
B
Beschoten
Ulrich
U
Simon
D004553:Electric Conductivity; D006046:Gold / Q000737:chemistry*; D015394:Molecular Structure; D049329:Nanostructures / Q000737:chemistry*; D010316:Particle Size; D012825:Silicon / Q000737:chemistry; D013438:Sulfhydryl Compounds / Q000737:chemistry*; D013499:Surface Properties
D013438:Sulfhydryl Compounds; D006046:Gold; D012825:Silicon