Quantitative thermometry of nanoscale hot spots.
A method is described to quantify thermal conductance and temperature distributions with nanoscale resolution using scanning thermal microscopy. In the first step, the thermal resistance of the tip-surface contact is measured for each point of a surface. In the second step, the local temperature is determined from the difference between the measured heat flux for heat sources switched on and off. The method is demonstrated using self-heating of silicon nanowires. While a homogeneous nanowire shows a bell-shaped temperature profile, a nanowire diode exhibits a hot spot centered near the junction between two doped segments.
IBM Research - Zurich, Säumerstrasse 4, CH-8803 Rüschlikon, Switzerland. fam@zurich.ibm.com
Fabian
F
Menges
Heike
H
Riel
Andreas
A
Stemmer
Bernd
B
Gotsmann
D008855:Microscopy, Electron, Scanning; D053770:Nanowires / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties; D013696:Temperature; D013814:Thermal Conductivity
D012825:Silicon