Improving the optical performance of InGaN light-emitting diodes by altering light reflection and refraction with triangular air prism arrays.
The effect of triangular air prism (TAP) arrays with different distance-to-width (d/w) ratios on the enhancement of light extraction efficiency (LEE) of InGaN light-emitting diodes (LEDs) is investigated. The TAP arrays embedded at the sapphire/GaN interface act as light reflectors and refractors, and thereby improve the light output power due to the redirection of light into escape cones on both the front and back sides of the LED. Enhancement in radiometric power as high as 117% and far-field angle as low as 129° are realized with a compact arrangement of TAP arrays compared with that of a conventional LED made without TAP arrays under an injection current of 20 mA.
Semiconductor Physics Research Center, School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju 561-756, South Korea.
Ji Hye
JH
Kang
Hyung Gu
HG
Kim
S
S
Chandramohan
Hyun Kyu
HK
Kim
Hee Yun
HY
Kim
Jae Hyoung
JH
Ryu
Young Jae
YJ
Park
Yun Seon
YS
Beak
Jeong-Sik
JS
Lee
Joong Seo
JS
Park
Volodymyr V
VV
Lysak
Chang-Hee
CH
Hong