Direct measurements of lateral variations of Schottky barrier height across "end-on" metal contacts to vertical Si nanowires by ballistic electron emission microscopy.
Ballistic electron emission microscopy measurements on individual "end-on" Au Schottky contacts to vertical Si nanowires (NWs) indicate that the local Schottky barrier height at the contact edge is 23 ± 3 meV lower than at the contact center. Finite-element electrostatic simulations suggest that this is due to a larger interface electric field at the contact edge resulting from (equilibrium) positive charge in Si/SiO(2) interface states near the Au/NW contact, induced by local band bending due to the high work function Au film.
Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA.
Wei
W
Cai
Yulu
Y
Che
Jonathan P
JP
Pelz
Eric R
ER
Hemesath
Lincoln J
LJ
Lauhon
D006046:Gold / Q000737:chemistry*; D008855:Microscopy, Electron, Scanning; D053770:Nanowires / Q000737:chemistry*; D010316:Particle Size; D012825:Silicon / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry; D055672:Static Electricity; D013499:Surface Properties
D006046:Gold; D012822:Silicon Dioxide; D012825:Silicon