Large-scale synthesis of high-quality hexagonal boron nitride nanosheets for large-area graphene electronics.
Hexagonal boron nitride (h-BN) has received a great deal of attention as a substrate material for high-performance graphene electronics because it has an atomically smooth surface, lattice constant similar to that of graphene, large optical phonon modes, and a large electrical band gap. Herein, we report the large-scale synthesis of high-quality h-BN nanosheets in a chemical vapor deposition (CVD) process by controlling the surface morphologies of the copper (Cu) catalysts. It was found that morphology control of the Cu foil is much critical for the formation of the pure h-BN nanosheets as well as the improvement of their crystallinity. For the first time, we demonstrate the performance enhancement of CVD-based graphene devices with large-scale h-BN nanosheets. The mobility of the graphene device on the h-BN nanosheets was increased 3 times compared to that without the h-BN nanosheets. The on-off ratio of the drain current is 2 times higher than that of the graphene device without h-BN. This work suggests that high-quality h-BN nanosheets based on CVD are very promising for high-performance large-area graphene electronics.
School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology (SAINT), Center for Human Interface Nanotechnology (HINT), SKKU-Samsung Graphene Center, Sungkyunkwan University (SKKU), Suwon 440-746, Republic of Korea.
Kang Hyuck
KH
Lee
Hyeon-Jin
HJ
Shin
Jinyeong
J
Lee
In-yeal
IY
Lee
Gil-Ho
GH
Kim
Jae-Young
JY
Choi
Sang-Woo
SW
Kim
D001896:Boron Compounds / Q000138:chemical synthesis* / Q000737:chemistry; D004581:Electronics; D005740:Gases / Q000737:chemistry; D006108:Graphite / Q000737:chemistry*; D057145:Nanoshells / Q000737:chemistry*; D010316:Particle Size; D013499:Surface Properties
D001896:Boron Compounds; D005740:Gases; C017282:boron nitride; D006108:Graphite