SiC formation for a solar cell passivation layer using an RF magnetron co-sputtering system.
In this paper, we describe a method of amorphous silicon carbide film formation for a solar cell passivation layer. The film was deposited on p-type silicon (100) and glass substrates by an RF magnetron co-sputtering system using a Si target and a C target at a room-temperature condition. Several different SiC [Si1-xCx] film compositions were achieved by controlling the Si target power with a fixed C target power at 150 W. Then, structural, optical, and electrical properties of the Si1-xCx films were studied. The structural properties were investigated by transmission electron microscopy and secondary ion mass spectrometry. The optical properties were achieved by UV-visible spectroscopy and ellipsometry. The performance of Si1-xCx passivation was explored by carrier lifetime measurement.
School of Electrical Engineering, Hanbat National University, Daejeon 305-719, Republic of Korea. wschoi@hanbat.ac.kr.
Yeun-Ho
YH
Joung
Hyun Il
HI
Kang
Jung Hyun
JH
Kim
Hae-Seok
HS
Lee
Jaehyung
J
Lee
Won Seok
WS
Choi