Electrodeposition of CuInSe2 (CIS) via electrochemical atomic layer deposition (E-ALD).
The growth of stoichiometric CuInSe(2) (CIS) on Au substrates using electrochemical atomic layer deposition (E-ALD) is reported here. Parameters for a ternary E-ALD cycle were investigated and included potentials, step sequence, solution compositions and timing. CIS was also grown by combining cycles for two binary compounds, InSe and Cu(2)Se, using a superlattice sequence. The formation, composition, and crystal structure of each are discussed. Stoichiometric CIS samples were formed using the superlattice sequence by performing 25 periods, each consisting of 3 cycles of InSe and 1 cycle of Cu(2)Se. The deposits were grown using 0.14, -0.7, and -0.65 V for Cu, In, and Se precursor solutions, respectively. XRD patterns displayed peaks consistent with the chalcopyrite phase of CIS, for the as-deposited samples, with the (112) reflection as the most prominent. AFM images of deposits suggested conformal deposition, when compared with corresponding image of the Au on glass substrate.
Materials Physics Department, Sandia National Laboratories, Livermore, California 94550, United States.
Dhego
D
Banga
Nagarajan
N
Jarayaju
Leah
L
Sheridan
Youn-Geun
YG
Kim
Brian
B
Perdue
Xin
X
Zhang
Qinghui
Q
Zhang
John
J
Stickney