Microstructures of GaN thin films grown on graphene layers.
Plan-view and cross-sectional transmission electron microscopy images show the microstructural properties of GaN thin films grown on graphene layers, including dislocation types and density, crystalline orientation and grain boundaries. The roles of ZnO nanowalls and GaN intermediate layers in the heteroepitaxial growth of GaN on graphene, revealed by cross-sectional transmission electron microscopy, are also discussed.
Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea.
Hyobin
H
Yoo
Kunook
K
Chung
Yong Seok
YS
Choi
Chan Soon
CS
Kang
Kyu Hwan
KH
Oh
Miyoung
M
Kim
Gyu-Chul
GC
Yi
D005708:Gallium / Q000737:chemistry*; D006108:Graphite / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry*; D036103:Nanotechnology / Q000379:methods*; D015034:Zinc Oxide / Q000737:chemistry
C473348:gallium nitride; D006108:Graphite; D005708:Gallium; D015034:Zinc Oxide