Controlling bandgap of rippled hexagonal boron nitride membranes via plasma treatment.
Few-layer rippled hexagonal boron nitride (h-BN) membranes were processed with hydrogen plasma, which exhibit distinct and pronounced changes in its electronic properties after the plasma treatment. The bandgaps of the h-BN membrane reduced from ~5.6 eV at 0 s to ~4.25 eV at 250 s, which is a signature of transition from the insulating to the semiconductive regime. It typically required 250 s of plasma treatment to reach the saturation. It illustrates that two-dimensional material with engineered electronic properties can be created by attaching other atoms or molecules.
Institute for Functional Nanomaterials and Department of Physics, University of Puerto Rico, Rio Piedras Campus, P.O. Box 23343, San Juan, PR 00925, Puerto Rico.
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Feng