Understanding the "tailoring synthesis" of CdS nanorods by O2.
Parameters such as solution concentrations and composition of the ambient atmosphere are known to be important in phase and morphology control in the solvothermal synthesis of CdS semiconductor nanorods (NRs), but a clear understanding of the underlying mechanisms involved is lacking. In this work, a series of experiments were performed to demonstrate that the key factor affecting the phase and morphology of CdS NRs is the amount of O(2) in the space above the reaction solution in the sealed vessel relative to the amount of precursors in solution: O(2)-depleted conditions resulted in more cubic phase CdS and thick polycrystalline NRs with an aspect ratio usually less than 3, which have small blue shifts in band-edge emission and little surface trap emission, while O(2)-rich conditions resulted in more hexagonal-phase CdS and slim single-crystal NRs, which have significantly blue shifted band-edge emission and relatively strong surface trap emission. Thus, increasing the amount of solution in the vessel, changing the ambient atmosphere from air to N(2), and increasing the reagent concentration all lower the molar ratio of O(2) to reagents and lead to more cubic phase and thicker NRs. The results indicate that the composition of the "empty" section of the reaction vessel plays as important a role as the composition of the liquid in determining the phase and morphology, something that has been overlooked in earlier work. A mechanism to explain the effect of oxygen on the nucleation and growth stages has been proposed on the basis of those results and further supported by shaking experiments and ZnS NR synthesis manipulation. The CdS NRs synthesized under different conditions showed obvious differences in photocatalytic activity, which indicated that controlling the synthetic process can lead to materials with tailored photocatalytic activity.
State Key Laboratory of Chemical Resource Engineering, P.O. Box 98, Beijing University of Chemical Technology, Beijing 100029, People's Republic of China.
Guoxin
G
Zhang
Peilei
P
He
Xiuju
X
Ma
Yun
Y
Kuang
Junfeng
J
Liu
Xiaoming
X
Sun