title: Selective doping of silicon nanowires by means of electron beam stimulated oxide etching.
abstract: Direct patterning of silicon dioxide by means of electron beam stimulated etching is shown, and a full characterization of exposure dose is presented. For its high dose, this technique is unsuitable for large areas but can be usefully employed like a precision scalpel for removing silicon dioxide by well-localized points. In this work, this technique is applied to the definition of windows through the oxide surrounding top down fabricated n-doped silicon nanowires. These windows will be employed for a selective doping of the nanowire by boron diffusion. In this way, pn junctions can be fabricated in well-localized points in the longitudinal direction of the nanowire, and an electrical contact to the different junctions can be provided. Electrical I-V characteristics of a nanowire with pn longitudinal junctions are reported and discussed.
authors.affiliation: Dipartimento di Ingegneria della Informazione, Università di Pisa, Via G.Caruso, I-56122 Pisa, Italy. g.pennelli@iet.unipi.it
authors.forename: G
authors.initials: G
authors.lastname: Pennelli
authors.forename: M
authors.initials: M
authors.lastname: Totaro
authors.forename: M
authors.initials: M
authors.lastname: Piotto
mesh_terms: D004583:Electrons; D036103:Nanotechnology / Q000295:instrumentation; D053770:Nanowires / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry*
chemical_list: D012822:Silicon Dioxide; D012825:Silicon