title: Photoluminescence study of low density InAs quantum clusters grown by molecular beam epitaxy.
abstract: We report a systematic optical spectroscopy study of low density InAs quantum clusters (QCs) grown by molecular beam epitaxy. The photoluminescence (PL) spectra show emission features of a wetting layer (WL) which contains hybridized quantum well states. The low-energy tail of the QCs' PL profile is actually an ensemble of some sharp lines, originating from the emission of different exciton states (e.g. X, X*, XX*) in a single quasi-three-dimensional (Q3D) cluster as detailed in the micro-PL spectra. The temperature dependence of PL spectra indicates photocarrier distribution and transport in the QC-WL system. Furthermore, this small InAs Q3D cluster is integrated with a distributed Bragg reflector structure, and using optical excitation creates a single photon source with the second-order correlation function of g((2))(0) = 0.31 at 16 K.
authors.affiliation: State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, People's Republic of China. yuying@semi.ac.cn
authors.forename: Ying
authors.initials: Y
authors.lastname: Yu
authors.forename: Mi-Feng
authors.initials: MF
authors.lastname: Li
authors.forename: Ji-Fang
authors.initials: JF
authors.lastname: He
authors.forename: Yan
authors.initials: Y
authors.lastname: Zhu
authors.forename: Li-Juan
authors.initials: LJ
authors.lastname: Wang
authors.forename: Hai-Qiao
authors.initials: HQ
authors.lastname: Ni
authors.forename: Zhen-Hong
authors.initials: ZH
authors.lastname: He
authors.forename: Zhi-Chuan
authors.initials: ZC
authors.lastname: Niu