title: Simulation study on discrete charge effects of SiNW biosensors according to bound target position using a 3D TCAD simulator.
abstract: We introduce a simulation method for the biosensor environment which treats the semiconductor and the electrolyte region together, using the well-established semiconductor 3D TCAD simulator tool. Using this simulation method, we conduct electrostatic simulations of SiNW biosensors with a more realistic target charge model where the target is described as a charged cube, randomly located across the nanowire surface, and analyze the Coulomb effect on the SiNW FET according to the position and distribution of the target charges. The simulation results show the considerable variation in the SiNW current according to the bound target positions, and also the dependence of conductance modulation on the polarity of target charges. This simulation method and the results can be utilized for analysis of the properties and behavior of the biosensor device, such as the sensing limit or the sensing resolution.
authors.affiliation: Department of Electronics and Communications, Kwangwoon University, Seoul, Korea.
authors.forename: In-Young
authors.initials: IY
authors.lastname: Chung
authors.forename: Hyeri
authors.initials: H
authors.lastname: Jang
authors.forename: Jieun
authors.initials: J
authors.lastname: Lee
authors.forename: Hyunggeun
authors.initials: H
authors.lastname: Moon
authors.forename: Sung Min
authors.initials: SM
authors.lastname: Seo
authors.forename: Dae Hwan
authors.initials: DH
authors.lastname: Kim
mesh_terms: D015374:Biosensing Techniques / Q000295:instrumentation*; D003198:Computer Simulation; D004573:Electrolytes / Q000737:chemistry*; D004867:Equipment Design; D008956:Models, Chemical; D053770:Nanowires / Q000737:chemistry*; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*; D055672:Static Electricity; D013499:Surface Properties
chemical_list: D004573:Electrolytes; D012825:Silicon