title: Automated nanomanipulation for nanodevice construction.
abstract: Nanowire field-effect transistors (nano-FETs) are nanodevices capable of highly sensitive, label-free sensing of molecules. However, significant variations in sensitivity across devices can result from poor control over device parameters, such as nanowire diameter and the number of electrode-bridging nanowires. This paper presents a fabrication approach that uses wafer-scale nanowire contact printing for throughput and uses automated nanomanipulation for precision control of nanowire number and diameter. The process requires only one photolithography mask. Using nanowire contact printing and post-processing (i.e. nanomanipulation inside a scanning electron microscope), we are able to produce devices all with a single-nanowire and similar diameters at a speed of ~1 min/device with a success rate of 95% (n = 500). This technology represents a seamless integration of wafer-scale microfabrication and automated nanorobotic manipulation for producing nano-FET sensors with consistent response across devices.
authors.affiliation: Department of Mechanical and Industrial Engineering, University of Toronto, Toronto, ON, Canada.
authors.forename: Yan Liang
authors.initials: YL
authors.lastname: Zhang
authors.forename: Jason
authors.initials: J
authors.lastname: Li
authors.forename: Steve
authors.initials: S
authors.lastname: To
authors.forename: Yong
authors.initials: Y
authors.lastname: Zhang
authors.forename: Xutao
authors.initials: X
authors.lastname: Ye
authors.forename: Lidan
authors.initials: L
authors.lastname: You
authors.forename: Yu
authors.initials: Y
authors.lastname: Sun