title: Sub-10 nm carbon nanotube transistor.
abstract: Although carbon nanotube (CNT) transistors have been promoted for years as a replacement for silicon technology, there is limited theoretical work and no experimental reports on how nanotubes will perform at sub-10 nm channel lengths. In this manuscript, we demonstrate the first sub-10 nm CNT transistor, which is shown to outperform the best competing silicon devices with more than four times the diameter-normalized current density (2.41 mA/μm) at a low operating voltage of 0.5 V. The nanotube transistor exhibits an impressively small inverse subthreshold slope of 94 mV/decade-nearly half of the value expected from a previous theoretical study. Numerical simulations show the critical role of the metal-CNT contacts in determining the performance of sub-10 nm channel length transistors, signifying the need for more accurate theoretical modeling of transport between the metal and nanotube. The superior low-voltage performance of the sub-10 nm CNT transistor proves the viability of nanotubes for consideration in future aggressively scaled transistor technologies.
authors.affiliation: IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA. aaronf@us.ibm.com
authors.forename: Aaron D
authors.initials: AD
authors.lastname: Franklin
authors.forename: Mathieu
authors.initials: M
authors.lastname: Luisier
authors.forename: Shu-Jen
authors.initials: SJ
authors.lastname: Han
authors.forename: George
authors.initials: G
authors.lastname: Tulevski
authors.forename: Chris M
authors.initials: CM
authors.lastname: Breslin
authors.forename: Lynne
authors.initials: L
authors.lastname: Gignac
authors.forename: Mark S
authors.initials: MS
authors.lastname: Lundstrom
authors.forename: Wilfried
authors.initials: W
authors.lastname: Haensch
mesh_terms: D037742:Nanotubes, Carbon / Q000737:chemistry*; D010316:Particle Size; D013499:Surface Properties; D014173:Transistors, Electronic
chemical_list: D037742:Nanotubes, Carbon