title: Imaging Schottky barriers and ohmic contacts in PbS quantum dot devices.
abstract: We fabricated planar PbS quantum dot devices with ohmic and Schottky type electrodes and characterized them using scanning photocurrent and photovoltage microscopies. The microscopy techniques used in this investigation allow for interrogation of the lateral depletion width and related photovoltaic properties in the planar Schottky type contacts. Titanium/QD contacts exhibited depletion widths that varied over a wide range as a function of bias voltage, while the gold/QD contacts showed ohmic behavior over the same voltage range.
authors.affiliation: Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
authors.forename: David B
authors.initials: DB
authors.lastname: Strasfeld
authors.forename: August
authors.initials: A
authors.lastname: Dorn
authors.forename: Darcy D
authors.initials: DD
authors.lastname: Wanger
authors.forename: Moungi G
authors.initials: MG
authors.lastname: Bawendi
mesh_terms: D004566:Electrodes; D006046:Gold / Q000737:chemistry; D007854:Lead / Q000737:chemistry*; D036103:Nanotechnology / Q000295:instrumentation*; D010316:Particle Size; D010777:Photochemistry / Q000295:instrumentation; D045663:Quantum Dots; D013440:Sulfides / Q000737:chemistry*; D013499:Surface Properties; D014025:Titanium / Q000737:chemistry; D014173:Transistors, Electronic
chemical_list: D013440:Sulfides; C018391:lead sulfide; D007854:Lead; D006046:Gold; D014025:Titanium