title: High-mobility field-effect transistors from large-area solution-grown aligned C60 single crystals.
abstract: Field-effect transistors based on single crystals of organic semiconductors have the highest reported charge carrier mobility among organic materials, demonstrating great potential of organic semiconductors for electronic applications. However, single-crystal devices are difficult to fabricate. One of the biggest challenges is to prepare dense arrays of single crystals over large-area substrates with controlled alignment. Here, we describe a solution processing method to grow large arrays of aligned C(60) single crystals. Our well-aligned C(60) single-crystal needles and ribbons show electron mobility as high as 11 cm(2)V(-1)s(-1) (average mobility: 5.2 ± 2.1 cm(2)V(-1)s(-1) from needles; 3.0 ± 0.87 cm(2)V(-1)s(-1) from ribbons). This observed mobility is ~8-fold higher than the maximum reported mobility for solution-grown n-channel organic materials (1.5 cm(2)V(-1)s(-1)) and is ~2-fold higher than the highest mobility of any n-channel organic material (~6 cm(2)V(-1)s(-1)). Furthermore, our deposition method is scalable to a 100 mm wafer substrate, with around 50% of the wafer surface covered by aligned crystals. Hence, our method facilitates the fabrication of large amounts of high-quality semiconductor crystals for fundamental studies, and with substantial improvement on the surface coverage of crystals, this method might be suitable for large-area applications based on single crystals of organic semiconductors.
authors.affiliation: Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
authors.forename: Hanying
authors.initials: H
authors.lastname: Li
authors.forename: Benjamin C-K
authors.initials: BC
authors.lastname: Tee
authors.forename: Judy J
authors.initials: JJ
authors.lastname: Cha
authors.forename: Yi
authors.initials: Y
authors.lastname: Cui
authors.forename: Jong Won
authors.initials: JW
authors.lastname: Chung
authors.forename: Sang Yoon
authors.initials: SY
authors.lastname: Lee
authors.forename: Zhenan
authors.initials: Z
authors.lastname: Bao
mesh_terms: D003460:Crystallization; D037741:Fullerenes / Q000737:chemistry*; D010316:Particle Size; D012996:Solutions; D013499:Surface Properties; D014173:Transistors, Electronic
chemical_list: D037741:Fullerenes; D012996:Solutions; C069837:fullerene C60