title: Graphene nanomesh-based devices exhibiting a strong negative differential conductance effect.
abstract: Using atomistic quantum simulation based on a tight binding model, we have investigated the transport characteristics of graphene nanomesh-based devices and evaluated the possibilities of observing negative differential conductance. It is shown that by taking advantage of bandgap opening in the graphene nanomesh lattice, a strong negative differential conductance effect can be achieved at room temperature in pn junctions and n-doped structures. Remarkably, the effect is improved very significantly (with a peak-to-valley current ratio of a few hundred) and appears to be weakly sensitive to the transition length in graphene nanomesh pn hetero-junctions when inserting a pristine (gapless) graphene section in the transition region between n and p zones. The study therefore suggests new design strategies for graphene electronic devices which may offer strong advantages in terms of performance and processing over the devices studied previously.
authors.affiliation: Institut d'Electronique Fondamentale, UMR8622, CNRS, Université Paris Sud, Orsay, France. viet-hung.nguyen@u-psud.fr
authors.forename: V Hung
authors.initials: VH
authors.lastname: Nguyen
authors.forename: F
authors.initials: F
authors.lastname: Mazzamuto
authors.forename: J
authors.initials: J
authors.lastname: Saint-Martin
authors.forename: A
authors.initials: A
authors.lastname: Bournel
authors.forename: P
authors.initials: P
authors.lastname: Dollfus