title: [Study of the physical properties of SnS thin films deposited by ultrasonic spray pyrolysis method].
abstract: In the present paper, SnS thin films were deposited by ultrasonic spray pyrolysis method. The influence of the three different precursor concentrations on the properties of SnS thin films was compared. XRD shows that when precursor solution is thiourea (0.5 mol x L(-1)) + tin tetrachloride (0.5 mol x L(-1)) + deionized water, there are SnS and SnO2 mixed phases; when precursor solution is thiourea (0.6 mol x L(-1)) + tin tetrachloride (0.5 mol x L(-1)) + deionized water, SnS phase is the dominant diffraction peak, although a certain amount of SnO2 phase is contained; when precursor solution is thiourea (0.7 mol x L(-1)) + tin tetrachloride (0.5 mol x L(-1)) + deionized water, thin film after being annealed is single SnS thin film with orthorhombic structure. SEM shows that films are uniform and dense. Furthermore, the particles of films are bigger when thiourea concentration is higher. Transmittance spectrum shows that the influence of precursor concentration on transmittance of thin films is less. Dark I-V and C-V tests of the devices show that junction characteristics of the devices were similar when prepared by three different concentrations of precursor solution, and as the thiourea concentration is higher, the carrier concentration is relatively larger.
authors.affiliation: College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China. ybtangping@163.com
authors.forename: Ping
authors.initials: P
authors.lastname: Tang
authors.forename: Bing
authors.initials: B
authors.lastname: Li
authors.forename: Zhi
authors.initials: Z
authors.lastname: Lei
authors.forename: Liang-Huan
authors.initials: LH
authors.lastname: Feng
authors.forename: Ya-Ping
authors.initials: YP
authors.lastname: Cai
authors.forename: Jia-Gui
authors.initials: JG
authors.lastname: Zheng
authors.forename: Jing-Quan
authors.initials: JQ
authors.lastname: Zhang
authors.forename: Wei
authors.initials: W
authors.lastname: Li
authors.forename: Li-Li
authors.initials: LL
authors.lastname: Wu
authors.forename: Guang-Gen
authors.initials: GG
authors.lastname: Zeng