title: Observation of spin-selective tunneling in SiGe nanocrystals.
abstract: Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in the valence band of the semiconductor. We demonstrate both experimentally and theoretically that spin-selective tunneling in semiconductor nanostructures can be achieved without the use of ferromagnetic contacts. The reported effect, which relies on mixing the light and heavy holes, should be observable in a broad class of quantum-dot systems formed in semiconductors with a degenerate valence band.
authors.affiliation: SPSMS, CEA-INAC/UJF-Grenoble 1, 17 Rue des Martyrs, F-38054 Grenoble Cedex 9, France. g.katsaros@ifw-dresden.de
authors.forename: G
authors.initials: G
authors.lastname: Katsaros
authors.forename: V N
authors.initials: VN
authors.lastname: Golovach
authors.forename: P
authors.initials: P
authors.lastname: Spathis
authors.forename: N
authors.initials: N
authors.lastname: Ares
authors.forename: M
authors.initials: M
authors.lastname: Stoffel
authors.forename: F
authors.initials: F
authors.lastname: Fournel
authors.forename: O G
authors.initials: OG
authors.lastname: Schmidt
authors.forename: L I
authors.initials: LI
authors.lastname: Glazman
authors.forename: S
authors.initials: S
authors.lastname: De Franceschi