title: Field-effect transistors fabricated from diluted magnetic semiconductor colloidal nanowires.
abstract: Field-effect transistors (FETs) fabricated from undoped and Co(2+)-doped CdSe colloidal nanowires show typical n-channel transistor behaviour with gate effect. Exposed to microscope light, a 10 times current enhancement is observed in the doped nanowire-based devices due to the significant modification of the electronic structure of CdSe nanowires induced by Co(2+)-doping, which is revealed by theoretical calculations from spin-polarized plane-wave density functional theory.
authors.affiliation: ARC Centre of Excellence for Functional Nanomaterials, Australian Institute for Bioengineering and Nanotechnology (AIBN), The University of Queensland (UQ), QLD 4072, Australia. z.li3@uq.edu.au
authors.forename: Zhen
authors.initials: Z
authors.lastname: Li
authors.forename: Ai Jun
authors.initials: AJ
authors.lastname: Du
authors.forename: Qiao
authors.initials: Q
authors.lastname: Sun
authors.forename: Muhsen
authors.initials: M
authors.lastname: Aljada
authors.forename: Zhong Hua
authors.initials: ZH
authors.lastname: Zhu
authors.forename: Gao Qing Max
authors.initials: GQ
authors.lastname: Lu
mesh_terms: D019187:Cadmium Compounds / Q000737:chemistry; D003035:Cobalt / Q000737:chemistry; D003102:Colloids / Q000737:chemistry; D006046:Gold / Q000737:chemistry; D008280:Magnetics; D053770:Nanowires / Q000737:chemistry*; D018036:Selenium Compounds / Q000737:chemistry; D012666:Semiconductors; D012822:Silicon Dioxide / Q000737:chemistry
chemical_list: D019187:Cadmium Compounds; D003102:Colloids; D018036:Selenium Compounds; D003035:Cobalt; D006046:Gold; D012822:Silicon Dioxide; C058667:cadmium selenide