title: Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays.
abstract: Vertically aligned InGaN/GaN nanorod light emitting diode (LED) arrays were created from planar LED structures using a new top-down fabrication technique consisting of a plasma etch followed by an anisotropic wet etch. The wet etch results in straight, smooth, well-faceted nanorods with controllable diameters and removes the plasma etch damage. 94% of the nanorod LEDs are dislocation-free and a reduced quantum confined Stark effect is observed due to reduced piezoelectric fields. Despite these advantages, the IQE of the nanorod LEDs measured by photoluminescence is comparable to the planar LED, perhaps due to inefficient thermal transport and enhanced nonradiative surface recombination.
authors.affiliation: Sandia National Laboratories, Albuquerque, NM87185, USA.
authors.forename: Qiming
authors.initials: Q
authors.lastname: Li
authors.forename: Karl R
authors.initials: KR
authors.lastname: Westlake
authors.forename: Mary H
authors.initials: MH
authors.lastname: Crawford
authors.forename: Stephen R
authors.initials: SR
authors.lastname: Lee
authors.forename: Daniel D
authors.initials: DD
authors.lastname: Koleske
authors.forename: Jeffery J
authors.initials: JJ
authors.lastname: Figiel
authors.forename: Karen C
authors.initials: KC
authors.lastname: Cross
authors.forename: Saeed
authors.initials: S
authors.lastname: Fathololoumi
authors.forename: Zetian
authors.initials: Z
authors.lastname: Mi
authors.forename: George T
authors.initials: GT
authors.lastname: Wang
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008029:Lighting / Q000295:instrumentation*; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure; D012666:Semiconductors
chemical_list: D007204:Indium; C473348:gallium nitride; D005708:Gallium; C513701:indium nitride