title: Control of efficiency, brightness, and recombination zone in light-emitting field effect transistors.
abstract: The split-gate light emitting field effect transistors (SG-LEFETs) demonstrate a new strategy for ambipolar LEFETs to achieve high brightness and efficiency simultaneously. The SG architecture forces largest quantity of opposite charges on Gate 1 and Gate 2 area to meet in the center of the channel. By actively and independently controlling current injection from separated gate electrodes within transporting channel, high brightness can be obtained in the largest injection current regime with highest efficiency.
authors.affiliation: Center for Polymers and Organic Solids, University of California, Santa Barbara, CA, USA.
authors.forename: Ben B Y
authors.initials: BB
authors.lastname: Hsu
authors.forename: Chunhui
authors.initials: C
authors.lastname: Duan
authors.forename: Ebinazar B
authors.initials: EB
authors.lastname: Namdas
authors.forename: Andrea
authors.initials: A
authors.lastname: Gutacker
authors.forename: Jonathan D
authors.initials: JD
authors.lastname: Yuen
authors.forename: Fei
authors.initials: F
authors.lastname: Huang
authors.forename: Yong
authors.initials: Y
authors.lastname: Cao
authors.forename: Guillermo C
authors.initials: GC
authors.lastname: Bazan
authors.forename: Ifor D W
authors.initials: ID
authors.lastname: Samuel
authors.forename: Alan J
authors.initials: AJ
authors.lastname: Heeger
mesh_terms: D004566:Electrodes; D004867:Equipment Design; D008027:Light; D014173:Transistors, Electronic