title: Strained germanium thin film membrane on silicon substrate for optoelectronics.
abstract: This work presents a novel method to introduce a sustainable biaxial tensile strain larger than 1% in a thin Ge membrane using a stressor layer integrated on a Si substrate. Raman spectroscopy confirms 1.13% strain and photoluminescence shows a direct band gap reduction of 100meV with enhanced light emission efficiency. Simulation results predict that a combination of 1.1% strain and heavy n(+) doping reduces the required injected carrier density for population inversion by over a factor of 60. We also present the first highly strained Ge photodetector, showing an excellent responsivity well beyond 1.6um.
authors.affiliation: Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA. dwnam@stanford.edu
authors.forename: Donguk
authors.initials: D
authors.lastname: Nam
authors.forename: Devanand
authors.initials: D
authors.lastname: Sukhdeo
authors.forename: Arunanshu
authors.initials: A
authors.lastname: Roy
authors.forename: Krishna
authors.initials: K
authors.lastname: Balram
authors.forename: Szu-Lin
authors.initials: SL
authors.lastname: Cheng
authors.forename: Kevin Chih-Yao
authors.initials: KC
authors.lastname: Huang
authors.forename: Ze
authors.initials: Z
authors.lastname: Yuan
authors.forename: Mark
authors.initials: M
authors.lastname: Brongersma
authors.forename: Yoshio
authors.initials: Y
authors.lastname: Nishi
authors.forename: David
authors.initials: D
authors.lastname: Miller
authors.forename: Krishna
authors.initials: K
authors.lastname: Saraswat
mesh_terms: D004581:Electronics / Q000295:instrumentation*; D004867:Equipment Design; D005857:Germanium / Q000737:chemistry* / Q000528:radiation effects*; D008027:Light; D008567:Membranes, Artificial; D055096:Optical Devices; D010783:Photometry / Q000379:methods*; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*
chemical_list: D008567:Membranes, Artificial; D005857:Germanium; D012825:Silicon