title: Zero-bias 40Gbit/s germanium waveguide photodetector on silicon.
abstract: We report on lateral pin germanium photodetectors selectively grown at the end of silicon waveguides. A very high optical bandwidth, estimated up to 120GHz, was evidenced in 10 µm long Ge photodetectors using three kinds of experimental set-ups. In addition, a responsivity of 0.8 A/W at 1550 nm was measured. An open eye diagrams at 40Gb/s were demonstrated under zero-bias at a wavelength of 1.55 µm.
authors.affiliation: Institut d’Electronique Fondamentale (IEF), Université Paris-Sud, CNRS, Orsay France. laurent.vivien@u-psud.fr
authors.forename: Laurent
authors.initials: L
authors.lastname: Vivien
authors.forename: Andreas
authors.initials: A
authors.lastname: Polzer
authors.forename: Delphine
authors.initials: D
authors.lastname: Marris-Morini
authors.forename: Johann
authors.initials: J
authors.lastname: Osmond
authors.forename: Jean Michel
authors.initials: JM
authors.lastname: Hartmann
authors.forename: Paul
authors.initials: P
authors.lastname: Crozat
authors.forename: Eric
authors.initials: E
authors.lastname: Cassan
authors.forename: Christophe
authors.initials: C
authors.lastname: Kopp
authors.forename: Horst
authors.initials: H
authors.lastname: Zimmermann
authors.forename: Jean Marc
authors.initials: JM
authors.lastname: Fédéli
mesh_terms: D004581:Electronics / Q000295:instrumentation*; D005857:Germanium / Q000737:chemistry*; D018625:Microscopy, Atomic Force / Q000295:instrumentation*; D055095:Optics and Photonics / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry*
chemical_list: D005857:Germanium; D012825:Silicon