title: Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current.
abstract: We present a compact 1.3 × 4 μm2 Germanium waveguide photodiode, integrated in a CMOS compatible silicon photonics process flow. This photodiode has a best-in-class 3 dB cutoff frequency of 45 GHz, responsivity of 0.8 A/W and dark current of 3 nA. The low intrinsic capacitance of this device may enable the elimination of transimpedance amplifiers in future optical data communication receivers, creating ultra low power consumption optical communications.
authors.affiliation: Sandia National Laboratory Applied Microphotonic Systems, Albuquerque, NM 87185, USA. cderose@sandia.gov
authors.forename: Christopher T
authors.initials: CT
authors.lastname: DeRose
authors.forename: Douglas C
authors.initials: DC
authors.lastname: Trotter
authors.forename: William A
authors.initials: WA
authors.lastname: Zortman
authors.forename: Andrew L
authors.initials: AL
authors.lastname: Starbuck
authors.forename: Moz
authors.initials: M
authors.lastname: Fisher
authors.forename: Michael R
authors.initials: MR
authors.lastname: Watts
authors.forename: Paul S
authors.initials: PS
authors.lastname: Davids
mesh_terms: D000669:Amplifiers, Electronic; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005857:Germanium / Q000737:chemistry*; D055096:Optical Devices; D010783:Photometry / Q000295:instrumentation*; D011827:Radiation; D012666:Semiconductors; D020349:Surface Plasmon Resonance / Q000295:instrumentation*
chemical_list: D005857:Germanium