title: Observation of degenerate one-dimensional sub-bands in cylindrical InAs nanowires.
abstract: One-dimensional (1D) sub-bands in cylindrical InAs nanowires (NWs) are electrically mapped as a function of NW diameter in the range of 15-35 nm. At low temperatures, stepwise current increases with the gate voltage are clearly observed and attributed to the electron transport through individual 1D sub-bands. The 2-fold degeneracy in certain sub-band energies predicted by simulation due to structural symmetry is experimentally observed for the first time. The experimentally obtained sub-band energies match the simulated results, shedding light on both the energies of the sub-bands as well as the number of sub-bands populated per given gate voltage and diameter. This work serves to provide better insight into the electrical transport behavior of 1D semiconductors.
authors.affiliation: Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720, USA.
authors.forename: Alexandra C
authors.initials: AC
authors.lastname: Ford
authors.forename: S Bala
authors.initials: SB
authors.lastname: Kumar
authors.forename: Rehan
authors.initials: R
authors.lastname: Kapadia
authors.forename: Jing
authors.initials: J
authors.lastname: Guo
authors.forename: Ali
authors.initials: A
authors.lastname: Javey
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D003198:Computer Simulation; D004553:Electric Conductivity; D007204:Indium / Q000737:chemistry*; D008956:Models, Chemical; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012666:Semiconductors
chemical_list: D001152:Arsenicals; D007204:Indium; C076773:indium arsenide