title: High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode.
abstract: We demonstrate a flip-chip bonded modified uni-traveling carrier (MUTC) photodiode with an RF output power of 0.75 W (28.8 dBm) at 15 GHz and OIP3 as high as 59 dBm. The photodiode has a responsivity of 0.7 A/W, 3-dB bandwidth > 15 GHz, and saturation photocurrent > 180 mA at 11 V reverse bias.
authors.affiliation: Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Road, Charlottesville, VA 22904, USA. zl4s@virginia.edu
authors.forename: Zhi
authors.initials: Z
authors.lastname: Li
authors.forename: Yang
authors.initials: Y
authors.lastname: Fu
authors.forename: Molly
authors.initials: M
authors.lastname: Piels
authors.forename: Huapu
authors.initials: H
authors.lastname: Pan
authors.forename: Andreas
authors.initials: A
authors.lastname: Beling
authors.forename: John E
authors.initials: JE
authors.lastname: Bowers
authors.forename: Joe C
authors.initials: JC
authors.lastname: Campbell