title: Floating electrode transistor based on purified semiconducting carbon nanotubes for high source-drain voltage operation.
abstract: We report floating-electrode-based thin-film transistors (F-TFTs) based on a purified semiconducting single-walled carbon nanotube (swCNT) network for a high source-drain voltage operation. At a high source-drain voltage, a conventional swCNT-TFT exhibited poor transistor performance with a small on-off ratio, which was attributed to the reduced Schottky barrier modulation at a large bias. In the F-TFT device, an swCNT network channel was separated into a number of channels connected by floating electrodes. The F-TFTs exhibited a much higher on-off ratio than a conventional swCNT-TFT with a single channel. This work should provide an important guideline in designing swCNT-TFTs for high voltage applications such as displays.
authors.affiliation: Department of Physics and Astronomy, Seoul National University, Seoul, Korea.
authors.forename: Joohyung
authors.initials: J
authors.lastname: Lee
authors.forename: Hyungwoo
authors.initials: H
authors.lastname: Lee
authors.forename: Taekyeong
authors.initials: T
authors.lastname: Kim
authors.forename: Hye Jun
authors.initials: HJ
authors.lastname: Jin
authors.forename: Juyeon
authors.initials: J
authors.lastname: Shin
authors.forename: Youngki
authors.initials: Y
authors.lastname: Shin
authors.forename: Sangho
authors.initials: S
authors.lastname: Park
authors.forename: Yoonho
authors.initials: Y
authors.lastname: Khang
authors.forename: Seunghun
authors.initials: S
authors.lastname: Hong
mesh_terms: D017097:Electric Impedance; D004566:Electrodes; D004867:Equipment Design; D019544:Equipment Failure Analysis; D036103:Nanotechnology / Q000295:instrumentation*; D037742:Nanotubes, Carbon / Q000737:chemistry* / Q000648:ultrastructure; D012666:Semiconductors; D014173:Transistors, Electronic
chemical_list: D037742:Nanotubes, Carbon