title: Active tuning of mid-infrared metamaterials by electrical control of carrier densities.
abstract: We demonstrate electrically-controlled active tuning of mid-infrared metamaterial resonances using depletion-type devices. The depletion width in an n-doped GaAs epilayer changes with an electric bias, inducing a change of the permittivity of the substrate and leading to frequency tuning of the resonance. We first present our detailed theoretical analysis and then explain experimental data of bias-dependent metamaterial transmission spectra. This electrical tuning is generally applicable to a variety of infrared metamaterials and plasmonic structures, which can find novel applications in chip-scale active infrared devices.
authors.affiliation: Center for Integrated Nanotechnologies (CINT), Sandia National Laboratories, PAlbuquerque, New Mexico 87185, USA. youngchul.jun@sandia.gov
authors.forename: Young Chul
authors.initials: YC
authors.lastname: Jun
authors.forename: Edward
authors.initials: E
authors.lastname: Gonzales
authors.forename: John L
authors.initials: JL
authors.lastname: Reno
authors.forename: Eric A
authors.initials: EA
authors.lastname: Shaner
authors.forename: Alon
authors.initials: A
authors.lastname: Gabbay
authors.forename: Igal
authors.initials: I
authors.lastname: Brener
mesh_terms: D001152:Arsenicals / Q000737:chemistry; D004553:Electric Conductivity; D004867:Equipment Design; D005708:Gallium / Q000737:chemistry; D007259:Infrared Rays; D008420:Manufactured Materials; D008670:Metals / Q000737:chemistry; D008853:Microscopy / Q000295:instrumentation; D008962:Models, Theoretical; D012666:Semiconductors / Q000295:instrumentation; D020349:Surface Plasmon Resonance / Q000295:instrumentation*
chemical_list: D001152:Arsenicals; D008670:Metals; C043055:gallium arsenide; D005708:Gallium