title: Donor-based single electron pumps with tunable donor binding energy.
abstract: We report on single electron pumping via a tunable number of individual donors. We use a device that essentially consists of a silicon nanowire with local arsenic implantation between a set of fine gates. A temperature-dependent characterization of the pumped current allows us to extract the ionization energy of a single arsenic donor. We observe the ionization energy to be tunable by the gate electric field over a large range of energies.
authors.affiliation: NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan. gabriel.lansbergen@lab.ntt.co.jp
authors.forename: G P
authors.initials: GP
authors.lastname: Lansbergen
authors.forename: Y
authors.initials: Y
authors.lastname: Ono
authors.forename: A
authors.initials: A
authors.lastname: Fujiwara
mesh_terms: D001151:Arsenic / Q000737:chemistry*; D004583:Electrons; D053770:Nanowires / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry*; D013816:Thermodynamics
chemical_list: D001151:Arsenic; D012825:Silicon