title: Facile synthesis of uniform large-sized InP nanocrystal quantum dots using tris(tert-butyldimethylsilyl)phosphine.
abstract: Colloidal III-V semiconductor nanocrystal quantum dots [NQDs] have attracted interest because they have reduced toxicity compared with II-VI compounds. However, the study and application of III-V semiconductor nanocrystals are limited by difficulties in their synthesis. In particular, it is difficult to control nucleation because the molecular bonds in III-V semiconductors are highly covalent. A synthetic approach of InP NQDs was presented using newly synthesized organometallic phosphorus [P] precursors with different functional moieties while preserving the P-Si bond. Introducing bulky side chains in our study improved the stability while facilitating InP formation with strong confinement at a readily low temperature regime (210°C to 300°C). Further shell coating with ZnS resulted in highly luminescent core-shell materials. The design and synthesis of P precursors for high-quality InP NQDs were conducted for the first time, and we were able to control the nucleation by varying the reactivity of P precursors, therefore achieving uniform large-sized InP NQDs. This opens the way for the large-scale production of high-quality Cd-free nanocrystal quantum dots.
authors.affiliation: Nanomechanical Systems Research Division, Korea Institute of Machinery and Materials, Daejeon 305-343, Republic of Korea. ykim@chungbuk.ac.kr.
authors.forename: Somyoung
authors.initials: S
authors.lastname: Joung
authors.forename: Sungwoo
authors.initials: S
authors.lastname: Yoon
authors.forename: Chang-Soo
authors.initials: CS
authors.lastname: Han
authors.forename: Youngjo
authors.initials: Y
authors.lastname: Kim
authors.forename: Sohee
authors.initials: S
authors.lastname: Jeong