title: Room temperature ballistic transport in InSb quantum well nanodevices.
abstract: We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned growth-buffer scheme. Ballistic electron transport is evidenced by a negative bend resistance signature which is quite clearly observed at 295 K and at current densities in excess of 10(6) A/cm(2). This demonstrates unequivocally that by using effective growth and processing strategies, room temperature ballistic effects can be exploited in InSb/AlInSb QWs at practical device dimensions.
authors.forename: A M
authors.initials: AM
authors.lastname: Gilbertson
authors.forename: A
authors.initials: A
authors.lastname: Kormányos
authors.forename: P D
authors.initials: PD
authors.lastname: Buckle
authors.forename: M
authors.initials: M
authors.lastname: Fearn
authors.forename: T
authors.initials: T
authors.lastname: Ashley
authors.forename: C J
authors.initials: CJ
authors.lastname: Lambert
authors.forename: S A
authors.initials: SA
authors.lastname: Solin
authors.forename: L F
authors.initials: LF
authors.lastname: Cohen