title: THz generation at 1.55 µm excitation: six-fold increase in THz conversion efficiency by separated photoconductive and trapping regions.
abstract: We present first results on photoconductive THz emitters for 1.55µm excitation. The emitters are based on MBE grown In0.53Ga0.47As/In0.52Al0.48As multilayer heterostructures (MLHS) with high carrier mobility. The high mobility is achieved by spatial separation of photoconductive and trapping regions. Photoconductive antennas made of these MLHS are evaluated as THz emitters in a THz time domain spectrometer (THz TDS). The high carrier mobility and effective absorption significantly increases the optical-to-THz conversion efficiency with THz bandwidth in excess of 3 THz.
authors.affiliation: Fraunhofer Instiute for Telecommunications, Heinrich-Hertz-Institute, Berlin, Germany. Roman.Dietz@hhi.fraunhofer.de
authors.forename: Roman J B
authors.initials: RJ
authors.lastname: Dietz
authors.forename: Marina
authors.initials: M
authors.lastname: Gerhard
authors.forename: Dennis
authors.initials: D
authors.lastname: Stanze
authors.forename: Martin
authors.initials: M
authors.lastname: Koch
authors.forename: Bernd
authors.initials: B
authors.lastname: Sartorius
authors.forename: Martin
authors.initials: M
authors.lastname: Schell
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D008029:Lighting / Q000295:instrumentation*; D055096:Optical Devices; D055053:Terahertz Radiation