title: Bilayer graphene on h-BN substrate: investigating the breakdown voltage and tuning the bandgap by electric field.
abstract: By performing density functional theory calculations we show that it is possible to make the electronic bandgap in bilayer graphene supported on hexagonal boron nitride (h-BN) substrates tunable. We also show that, under applied electric fields, it is possible to insert states from h-BN into the bandgap, which generate a conduction channel through the substrate making the system metallic. In addition, we verify that the breakdown voltage strongly depends on the number of h-BN layers. We also show that both the breakdown voltage and the bandgap tuning are independent of the h-BN stacking order.
authors.affiliation: Instituto de Física, Universidade de São Paulo, São Paulo, SP, Brazil. padilha@if.usp.br
authors.forename: José Eduardo
authors.initials: JE
authors.lastname: Padilha
authors.forename: Renato Borges
authors.initials: RB
authors.lastname: Pontes
authors.forename: Adalberto
authors.initials: A
authors.lastname: Fazzio