title: Coherent and directional emission at 1.55 μm from PbSe colloidal quantum dot electroluminescent device on silicon.
abstract: Coherent and directional emission at 1.55 μm from a PbSe colloidal quantum dot electroluminescent device on silicon is demonstrated. The quantum dots are sandwiched between a metallic mirror and a distributed Bragg reflector and are chemically treated in order to increase the electronic coupling. Electrons and holes are injected through ZnO nanocrystals and indium tin oxide, respectively. The measured electroluminescence exhibits a minimum linewidth of ~3.1 nm corresponding to a cavity quality factor of ~500 at a low injection current density of 3 A/cm2, and highly directional emission characteristics.
authors.affiliation: Center for Nanoscale Photonics and Spintronics, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA.
authors.forename: Junseok
authors.initials: J
authors.lastname: Heo
authors.forename: Zhenyu
authors.initials: Z
authors.lastname: Jiang
authors.forename: Jian
authors.initials: J
authors.lastname: Xu
authors.forename: Pallab
authors.initials: P
authors.lastname: Bhattacharya
mesh_terms: D003102:Colloids / Q000737:chemistry*; D007854:Lead / Q000737:chemistry*; D008163:Luminescent Measurements / Q000295:instrumentation*; D055096:Optical Devices; D045663:Quantum Dots; D012031:Refractometry / Q000295:instrumentation*; D018036:Selenium Compounds / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry*
chemical_list: D003102:Colloids; D018036:Selenium Compounds; C088065:lead selenide; D007854:Lead; D012825:Silicon