title: Carrier dynamics in InN nanorod arrays.
abstract: In this report, we investigated ultrafast carrier dynamics of vertically aligned indium nitride (InN) nanorod (NR) arrays grown by molecular-beam epitaxy on Si(111) substrates. Dominant band filling effects were observed and were attributed to a partial bleaching of absorption at the probe wavelengths near the absorption edge. Carrier relaxation in nanorod samples was strongly dependent on the rod size and length. In particular, a fast initial decay was observed for carriers in NRs with a small diameter (~30 nm), the lifetime of which is much shorter than the carrier cooling time, demonstrating the substantial surface-associated influence on carrier relaxation in semiconductor nanostructures.
authors.affiliation: Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan. hyahn@mail.nctu.edu.tw
authors.forename: Hyeyoung
authors.initials: H
authors.lastname: Ahn
authors.forename: Chih-Cheng
authors.initials: CC
authors.lastname: Yu
authors.forename: Pyng
authors.initials: P
authors.lastname: Yu
authors.forename: Jau
authors.initials: J
authors.lastname: Tang
authors.forename: Yu-Liang
authors.initials: YL
authors.lastname: Hong
authors.forename: Shangjr
authors.initials: S
authors.lastname: Gwo
mesh_terms: D004581:Electronics / Q000379:methods*; D007204:Indium / Q000737:chemistry*; D008855:Microscopy, Electron, Scanning; D036103:Nanotechnology / Q000379:methods*; D043942:Nanotubes; D055095:Optics and Photonics / Q000379:methods*
chemical_list: D007204:Indium; C513701:indium nitride