title: Bound exciton photoluminescence from ion‑implanted phosphorus in thin silicon layers.
abstract: We report the observation of clear bound exciton (BE) emission from ion-implanted phosphorus. Shallow implantation and high-temperature annealing successfully introduce active donors into thin silicon layers. The BE emission at a wavelength of 1079 nm shows that a part of the implanted donors are definitely activated and isolated from each other. However, photoluminescence and electron spin resonance studies find a cluster state of the activated donors. The BE emission is suppressed by this cluster state rather than the nonradiative processes caused by ion implantation. Our results provide important information about ion implantation for doping quantum devices with phosphorus quantum bits.
authors.affiliation: NTT Basic Research Laboratories, NTT Corporation, Kanagawa, Japan. sumikura.hisashi@lab.ntt.co.jp
authors.forename: Hisashi
authors.initials: H
authors.lastname: Sumikura
authors.forename: Katsuhiko
authors.initials: K
authors.lastname: Nishiguchi
authors.forename: Yukinori
authors.initials: Y
authors.lastname: Ono
authors.forename: Akira
authors.initials: A
authors.lastname: Fujiwara
authors.forename: Masaya
authors.initials: M
authors.lastname: Notomi
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D020450:Heavy Ions; D008027:Light; D008163:Luminescent Measurements / Q000295:instrumentation*; D008422:Materials Testing; D010758:Phosphorus / Q000737:chemistry* / Q000528:radiation effects*; D012542:Scattering, Radiation; D012825:Silicon / Q000737:chemistry* / Q000528:radiation effects
chemical_list: D010758:Phosphorus; D012825:Silicon