title: Two-dimensional microstructures induced by femtosecond vector light fields on silicon.
abstract: We have fabricated the complicated two-dimensional subwave-length microstructures induced by the femtosecond vector light fields on silicon. The fabricated microstructures have the interval between two ripples in microstructures to be around 670-690 nm and the depth of the grooves to be about 300 nm when the pulse fluence of 0.26 J/cm2 is slightly higher than the ablated threshold of 0.2 J/cm2 for silicon under the irradiation of 100 pulses. The ripples are always perpendicular to the direction of the locally linear polarization. The designable spatial structure of polarization of the femtosecond vector light field can be used to manipulate the fabricated microstructure.
authors.affiliation: MOE Key Laboratory of Weak Light Nonlinear Photonics and School of Physics, Nankai University, Tianjin 300071, China.
authors.forename: Kai
authors.initials: K
authors.lastname: Lou
authors.forename: Sheng-Xia
authors.initials: SX
authors.lastname: Qian
authors.forename: Xi-Lin
authors.initials: XL
authors.lastname: Wang
authors.forename: Yongnan
authors.initials: Y
authors.lastname: Li
authors.forename: Bing
authors.initials: B
authors.lastname: Gu
authors.forename: Chenghou
authors.initials: C
authors.lastname: Tu
authors.forename: Hui-Tian
authors.initials: HT
authors.lastname: Wang
mesh_terms: D008027:Light; D008422:Materials Testing; D011829:Radiation Dosage; D012031:Refractometry / Q000379:methods*; D012825:Silicon / Q000737:chemistry* / Q000528:radiation effects*; D013499:Surface Properties / Q000528:radiation effects
chemical_list: D012825:Silicon