title: Nanostructured n-ZnO / thin film p-silicon heterojunction light-emitting diodes.
abstract: Electroluminescence (EL) was obtained from a p-Si (100) thin film/nanostructured n-ZnO heterojunction diode fabricated by a simple dielectrophoresis (DEP) method. The Si substrate was pre-patterned with electrodes and an insulating separation layer by a standard photolithographic process. ZnO nanostructures were formed by a simple solution chemistry and subsequently transferred to the pre-patterned substrate. Application of the DEP force at a frequency of 100 kHz and 6 V peak-to-peak voltage allowed precise positioning of the ZnO nanostructures at the edge of the metal electrodes. The physically formed p-Si (100) thin film/nanostructured n-ZnO heterojunction displayed multi-color emission from the ZnO near band edge as well as emission from defective states within the ZnO band gap.
authors.affiliation: Department of Chemical and Biological Engineering, Korea University, Seoul, South Korea.
authors.forename: Jaehui
authors.initials: J
authors.lastname: Ahn
authors.forename: Hyunik
authors.initials: H
authors.lastname: Park
authors.forename: Michael A
authors.initials: MA
authors.lastname: Mastro
authors.forename: Jennifer K
authors.initials: JK
authors.lastname: Hite
authors.forename: Charles R
authors.initials: CR
authors.lastname: Eddy
authors.forename: Jihyun
authors.initials: J
authors.lastname: Kim
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D008029:Lighting / Q000295:instrumentation*; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D010316:Particle Size; D012666:Semiconductors; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D015034:Zinc Oxide