title: AB-stacked multilayer graphene synthesized via chemical vapor deposition: a characterization by hot carrier transport.
abstract: We report the synthesis of AB-stacked multilayer graphene via ambient pressure chemical vapor deposition on Cu foils and demonstrate a method to construct suspended multilayer graphene devices. In four-terminal geometry, such devices were characterized by hot carrier transport at temperatures down to 240 mK and in magnetic fields up to 14 T. The differential conductance (dI/dV) shows a characteristic dip at longitudinal voltage bias V = 0 at low temperatures, indicating the presence of hot electron effect due to a weak electron-phonon coupling. Under magnetic fields, the magnitude of the dI/dV dip diminishes through the enhanced intra-Landau level cyclotron phonon scattering. Our results provide new perspectives in obtaining and understanding AB-stacked multilayer graphene, important for future graphene-based applications.
authors.affiliation: Department of Physics, University of Houston, Houston, Texas 77204, United States.
authors.forename: Carlos
authors.initials: C
authors.lastname: Diaz-Pinto
authors.forename: Debtanu
authors.initials: D
authors.lastname: De
authors.forename: Viktor G
authors.initials: VG
authors.lastname: Hadjiev
authors.forename: Haibing
authors.initials: H
authors.lastname: Peng