title: Dual n-type doped reduced graphene oxide field effect transistors controlled by semiconductor nanocrystals.
abstract: Here, we demonstrate a rapid and simple method for doping a reduced graphene oxide (rGO) field effect transistor (FET) with nanocrystals to produce dual n-type behavior with light and bias voltage. This convenient method promises industrial level doping of graphene transistors.
authors.affiliation: National Creative Research Initiative, Center for Smart Molecular Memory, Department of Chemistry, Samsung-SKKU Graphene Center, Sungkyunkwan University, Suwon, 440-746, Republic of Korea.
authors.forename: Luyang
authors.initials: L
authors.lastname: Wang
authors.forename: Jie
authors.initials: J
authors.lastname: Lian
authors.forename: Peng
authors.initials: P
authors.lastname: Cui
authors.forename: Yang
authors.initials: Y
authors.lastname: Xu
authors.forename: Sohyeon
authors.initials: S
authors.lastname: Seo
authors.forename: Junghyun
authors.initials: J
authors.lastname: Lee
authors.forename: Yinthai
authors.initials: Y
authors.lastname: Chan
authors.forename: Hyoyoung
authors.initials: H
authors.lastname: Lee