title: Photoconductive and supramolecularly engineered organic field-effect transistors based on fibres from donor-acceptor dyads.
abstract: We report on the formation of photoconductive self-assembled fibres by solvent induced precipitation of a HBC-PMI donor-acceptor dyad. Kelvin Probe Force Microscopy revealed that upon illumination with white light the surface potential of the fibres shifted to negative values due to a build-up of negative charge. When integrated in a field-effect transistor (FET) configuration, the devices can be turned 'on' much more efficiently using light than conventional bias triggered field-effect, suggesting that these structures could be used for the fabrication of light sensing devices. Such a double gating represents an important step towards bi-functional organic FETs, in which the current through the junction can be modulated both optically (by photoexcitation) and electrically (by gate control).
authors.affiliation: ISIS/UMR CNRS 7006, Université de Strasbourg, 8 allée Gaspard Monge, 67000, Strasbourg, France.
authors.forename: Matthias
authors.initials: M
authors.lastname: Treier
authors.forename: Andrea
authors.initials: A
authors.lastname: Liscio
authors.forename: Jeffrey M
authors.initials: JM
authors.lastname: Mativetsky
authors.forename: Marcel
authors.initials: M
authors.lastname: Kastler
authors.forename: Klaus
authors.initials: K
authors.lastname: Müllen
authors.forename: Vincenzo
authors.initials: V
authors.lastname: Palermo
authors.forename: Paolo
authors.initials: P
authors.lastname: Samorì