title: Tunable catalytic alloying eliminates stacking faults in compound semiconductor nanowires.
abstract: Planar defects in compound (III-V and II-VI) semiconductor nanowires (NWs), such as twin and stacking faults, are universally formed during the catalytic NW growth, and they detrimentally act as static disorders against coherent electron transport and light emissions. Here we report a simple synthetic route for planar-defect free II-VI NWs by tunable alloying, i.e. Cd(1-x)Zn(x)Te NWs (0 ≤ x ≤ 1). It is discovered that the eutectic alloying of Cd and Zn in Au catalysts immediately alleviates interfacial instability during the catalytic growth by the surface energy minimization and forms homogeneous zinc blende crystals as opposed to unwanted zinc blende/wurtzite mixtures. As a direct consequence of the tunable alloying, we demonstrated that intrinsic energy band gap modulation in Cd(1-x)Zn(x)Te NWs can exploit the tunable spectral and temporal responses in light detection and emission in the full visible range.
authors.affiliation: Division of Advanced Materials Science Science (WCU), Pohang University of Science and Technology (POSTECH), San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790-784, Korea.
authors.forename: Hoseok
authors.initials: H
authors.lastname: Heo
authors.forename: Kibum
authors.initials: K
authors.lastname: Kang
authors.forename: Donghun
authors.initials: D
authors.lastname: Lee
authors.forename: Li-Hua
authors.initials: LH
authors.lastname: Jin
authors.forename: Hyeon-Jun
authors.initials: HJ
authors.lastname: Back
authors.forename: Inchan
authors.initials: I
authors.lastname: Hwang
authors.forename: Miseong
authors.initials: M
authors.lastname: Kim
authors.forename: Hyun-Seung
authors.initials: HS
authors.lastname: Lee
authors.forename: Byeong-Joo
authors.initials: BJ
authors.lastname: Lee
authors.forename: Gyu-Chul
authors.initials: GC
authors.lastname: Yi
authors.forename: Yong-Hoon
authors.initials: YH
authors.lastname: Cho
authors.forename: Moon-Ho
authors.initials: MH
authors.lastname: Jo
mesh_terms: D000497:Alloys / Q000737:chemistry*; D002104:Cadmium / Q000737:chemistry*; D002384:Catalysis; D006046:Gold / Q000737:chemistry*; D053770:Nanowires / Q000737:chemistry*; D010316:Particle Size; D012666:Semiconductors; D013499:Surface Properties; D013691:Tellurium / Q000737:chemistry*; D015032:Zinc / Q000737:chemistry*
chemical_list: D000497:Alloys; D002104:Cadmium; D006046:Gold; D015032:Zinc; D013691:Tellurium