title: Low-voltage high-performance silicon photonic devices and photonic integrated circuits operating up to 30 Gb/s.
abstract: We present high performance silicon photonic circuits (PICs) defined for off-chip or on-chip photonic interconnects, where PN depletion Mach-Zehnder modulators and evanescent-coupled waveguide Ge-on-Si photodetectors were monolithically integrated on an SOI wafer with CMOS-compatible process. The fabricated silicon PIC(off-chip) for off-chip optical interconnects showed operation up to 30 Gb/s. Under differential drive of low-voltage 1.2 V(pp), the integrated 1 mm-phase-shifter modulator in the PIC(off-chip) demonstrated an extinction ratio (ER) of 10.5dB for 12.5 Gb/s, an ER of 9.1dB for 20 Gb/s, and an ER of 7.2 dB for 30 Gb/s operation, without adoption of travelling-wave electrodes. The device showed the modulation efficiency of V(π)L(π) ~1.59 Vcm, and the phase-shifter loss of 3.2 dB/mm for maximum optical transmission. The Ge photodetector, which allows simpler integration process based on reduced pressure chemical vapor deposition exhibited operation over 30 Gb/s with a low dark current of 700 nA at -1V. The fabricated silicon PIC(intra-chip) for on-chip (intra-chip) photonic interconnects, where the monolithically integrated modulator and Ge photodetector were connected by a silicon waveguide on the same chip, showed on-chip data transmissions up to 20 Gb/s, indicating potential application in future silicon on-chip optical network. We also report the performance of the hybrid silicon electronic-photonic IC (EPIC), where a PIC(intra-chip) chip and 0.13μm CMOS interface IC chips were hybrid-integrated.
authors.affiliation: Electronics & Telecommunications Research Institute, Yuseong-gu, Daejeon, Korea. gokim@etri.re.kr
authors.forename: Gyungock
authors.initials: G
authors.lastname: Kim
authors.forename: Jeong Woo
authors.initials: JW
authors.lastname: Park
authors.forename: In Gyoo
authors.initials: IG
authors.lastname: Kim
authors.forename: Sanghoon
authors.initials: S
authors.lastname: Kim
authors.forename: Sanggi
authors.initials: S
authors.lastname: Kim
authors.forename: Jong Moo
authors.initials: JM
authors.lastname: Lee
authors.forename: Gun Sik
authors.initials: GS
authors.lastname: Park
authors.forename: Jiho
authors.initials: J
authors.lastname: Joo
authors.forename: Ki-Seok
authors.initials: KS
authors.lastname: Jang
authors.forename: Jin Hyuk
authors.initials: JH
authors.lastname: Oh
authors.forename: Sun Ae
authors.initials: SA
authors.lastname: Kim
authors.forename: Jong Hoon
authors.initials: JH
authors.lastname: Kim
authors.forename: Jun Young
authors.initials: JY
authors.lastname: Lee
authors.forename: Jong Moon
authors.initials: JM
authors.lastname: Park
authors.forename: Do-Won
authors.initials: DW
authors.lastname: Kim
authors.forename: Deog-Kyoon
authors.initials: DK
authors.lastname: Jeong
authors.forename: Moon-Sang
authors.initials: MS
authors.lastname: Hwang
authors.forename: Jeong-Kyoum
authors.initials: JK
authors.lastname: Kim
authors.forename: Kyu-Sang
authors.initials: KS
authors.lastname: Park
authors.forename: Han-Kyu
authors.initials: HK
authors.lastname: Chi
authors.forename: Hyun-Chang
authors.initials: HC
authors.lastname: Kim
authors.forename: Dong-Wook
authors.initials: DW
authors.lastname: Kim
authors.forename: Mu Hee
authors.initials: MH
authors.lastname: Cho
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D008872:Microwaves; D055096:Optical Devices; D010783:Photometry / Q000295:instrumentation*; D017785:Photons; D012666:Semiconductors; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry*; D018511:Systems Integration; D013685:Telecommunications / Q000295:instrumentation*
chemical_list: D012825:Silicon