title: Variability in carbon nanotube transistors: improving device-to-device consistency.
abstract: The large amount of hysteresis and threshold voltage variation in carbon nanotube transistors impedes their use in highly integrated digital applications. The origin of this variability is elucidated by employing a top-coated, hydrophobic monolayer to passivate bottom-gated devices. Compared to passivating only the supporting substrate, it is found that covering the nanotube channel proves highly effective and robust at improving device-to-device consistency-hysteresis and threshold voltage variation are reduced by an average of 84 and 53%, respectively. The effect of gate and drain-source bias on hysteresis is considered, showing strong dependence that must be accounted for when analyzing the effectiveness of a passivation layer. These results provide both key insight into the origin of variability in carbon nanotube transistors and a promising path for resolving this significant obstacle.
authors.affiliation: IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, United States. aaronf@us.ibm.com
authors.forename: Aaron D
authors.initials: AD
authors.lastname: Franklin
authors.forename: George S
authors.initials: GS
authors.lastname: Tulevski
authors.forename: Shu-Jen
authors.initials: SJ
authors.lastname: Han
authors.forename: Davood
authors.initials: D
authors.lastname: Shahrjerdi
authors.forename: Qing
authors.initials: Q
authors.lastname: Cao
authors.forename: Hong-Yu
authors.initials: HY
authors.lastname: Chen
authors.forename: H-S Philip
authors.initials: HS
authors.lastname: Wong
authors.forename: Wilfried
authors.initials: W
authors.lastname: Haensch