title: Spin-related tunneling through a nanostructured electric-magnetic barrier on the surface of a topological insulator.
abstract: We investigate quantum tunneling through a single electric and/or magnetic barrier on the surface of a three-dimensional topological insulator. We found that (1) the propagating behavior of electrons in such system exhibits a strong dependence on the direction of the incident electron wavevector and incident energy, giving the possibility to construct a wave vector and/or energy filter; (2) the spin orientation can be tuned by changing the magnetic barrier structure as well as the incident angles and energies.PACS numbers: 72.25.Dc; 73.20.-r; 73.23.-b; 75.70.-i.
authors.affiliation: SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P,O, Box 912, Beijing 100083, China. zhwu@semi.ac.cn.
authors.forename: Zhenhua
authors.initials: Z
authors.lastname: Wu
authors.forename: Jun
authors.initials: J
authors.lastname: Li