Electronic structure of ytterbium-implanted GaN at ambient and high pressure: experimental and crystal field studies.
The results of high-pressure low-temperature optical measurements in a diamond-anvil cell of bulk gallium nitride crystals implanted with ytterbium are reported in combination with crystal field calculations of the Yb(3+) energy levels. Crystal field analysis of splitting of the (2)F(7/2) and (2)F(5/2) states has been performed, with the aim of assigning all features of the experimental luminescence spectra. A thorough analysis of the pressure behavior of the Yb(3+) luminescence lines in GaN allowed the determination of the ambient-pressure positions and pressure dependence of the Yb(3+) energy levels in the trigonal crystal field as well as the pressure-induced changes of the spin-orbit coupling coefficient.
Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, 02-668 Warsaw, Poland. kaminska@ifpan.edu.pl
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Kaminska
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Brik
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Kozanecki
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Boćkowski
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Suchocki
D003460:Crystallization; D004583:Electrons; D005708:Gallium / Q000737:chemistry*; D049449:Luminescence; D011312:Pressure; D013696:Temperature; D015018:Ytterbium / Q000737:chemistry*
C473348:gallium nitride; D005708:Gallium; D015018:Ytterbium