Ultracompact polarization converter with a dual subwavelength trench built in a silicon-on-insulator waveguide.
The design and fabrication of an ultracompact silicon-on-insulator polarization converter is reported. The polarization conversion with an extinction ratio of 16 dB is achieved for a conversion length of only 10 μm. Polarization rotation is achieved by inducing a vertical asymmetry by forming in the waveguide core two subwavelength trenches of different depths. By taking advantage of the calibrated reactive ion etch lag, the two depths are implemented using a single mask and etching process. The measured converter loss is -0.7 dB and the 3 dB bandwidth is 26 nm.
Departamento de Optica, Facultad de Ciencias Fisicas, Universidad Complutense de Madrid, Madrid, Spain. avillafr@pdi.ucm.es
Aitor V
AV
Velasco
María L
ML
Calvo
Pavel
P
Cheben
Alejandro
A
Ortega-Moñux
Jens H
JH
Schmid
Carlos Alonso
CA
Ramos
Iñigo Molina
IM
Fernandez
Jean
J
Lapointe
Martin
M
Vachon
Siegfried
S
Janz
Dan-Xia
DX
Xu
D055620:Optical Phenomena; D012399:Rotation; D012825:Silicon
D012825:Silicon