Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon.
Multiple seed formation by three-dimensional twinning at the initial stages of growth explains the manifold of orientations found when self-catalyzed GaAs nanowires grow on silicon. This mechanism can be tuned as a function of the growth conditions by changing the relative size between the GaAs seed and the Ga droplet. We demonstrate how growing under high V/III ratio results in a 100% yield of vertical nanowires on silicon(111). These results open up the avenue towards the efficient integration of III-V nanowire arrays on the silicon platform.
Laboratoire des Materiaux Semiconducteurs, Ecole Polytechnique Federale de Lausanne, 1015 Lausanne, Switzerland. anna.fontcuberta-morral@epfl.ch
Eleonora
E
Russo-Averchi
Martin
M
Heiss
Lionel
L
Michelet
Peter
P
Krogstrup
Jesper
J
Nygard
Cesar
C
Magen
Joan Ramon
JR
Morante
Emanuele
E
Uccelli
Jordi
J
Arbiol
A
A
Fontcuberta i Morral