Highly luminescent InP/GaP/ZnS nanocrystals and their application to white light-emitting diodes.
Highly stable and luminescent InP/GaP/ZnS QDs with a maximum quantum yield of 85% were synthesized by in situ method. The GaP shell rendered passivation of the surface and removed the traps. TCSPC data showed an evidence for the GaP shell. InP/GaP/ZnS QDs show better stability than InP/ZnS. We studied the optical properties of white QD-LEDs corresponding to various QD concentrations. Among various concentrations, the white QD-LEDs with 0.5 mL of QDs exhibited a luminous efficiency of 54.71 lm/W, Ra of 80.56, and CCT of 7864 K.
Department of Molecular Science and Technology, Ajou University, Suwon 443-749, Korea.
Sungwoo
S
Kim
Taehoon
T
Kim
Meejae
M
Kang
Seong Kwon
SK
Kwak
Tae Wook
TW
Yoo
Lee Soon
LS
Park
Ilseung
I
Yang
Sunjin
S
Hwang
Jung Eun
JE
Lee
Seong Keun
SK
Kim
Sang-Wook
SW
Kim