Boron δ-doped (111) diamond solution gate field effect transistors.
A solution gate field effect transistor (SGFET) using an oxidised boron δ-doped channel on (111) diamond is presented for the first time. Employing an optimised plasma chemical vapour deposition (PECVD) recipe to deposit δ-layers, SGFETs show improved current-voltage (I-V) characteristics in comparison to previous similar devices fabricated on (100) and polycrystalline diamond, where the device is shown to operate in the enhancement mode of operation, achieving channel pinch-off and drain-source current saturation within the electrochemical window of diamond. A maximum gain and transconductance of 3 and 200μS/mm are extracted, showing comparable figures of merit to hydrogen-based SGFET. The oxidised device shows a site-binding model pH sensitivity of 36 mV/pH, displaying fast temporal responses. Considering the biocompatibility of diamond towards cells, the device's highly mutable transistor characteristics, pH sensitivity and stability against anodic oxidation common to hydrogen terminated diamond SGFET, oxidised boron δ-doped diamond SGFETs show promise for the recording of action potentials from electrogenic cells.
London Centre for Nanotechnology, and Department of Electronic and Electrical Engineering, University College London, 17-19 Gordon Street, London, WC1H 0AH, UK.
Robert
R
Edgington
A Rahim
AR
Ruslinda
Syunsuke
S
Sato
Yuichiro
Y
Ishiyama
Kyosuke
K
Tsuge
Tasuku
T
Ono
Hiroshi
H
Kawarada
Richard B
RB
Jackman
D000200:Action Potentials; D015374:Biosensing Techniques / Q000295:instrumentation*; D001895:Boron / Q000737:chemistry*; D018130:Diamond / Q000737:chemistry*; D055664:Electrochemical Techniques; D006863:Hydrogen-Ion Concentration; D010084:Oxidation-Reduction; D014173:Transistors, Electronic
D018130:Diamond; D001895:Boron