Long spin relaxation times in wafer scale epitaxial graphene on SiC(0001).
We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times τ(S) in monolayer graphene, while the spin diffusion coefficient D(S) is strongly reduced compared to typical results on exfoliated graphene. The increase of τ(S) is probably related to the changed substrate, while the cause for the small value of D(S) remains an open question.
Physics of Nanodevices, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands. t.maassen@rug.nl
Thomas
T
Maassen
J Jasper
JJ
van den Berg
Natasja
N
Ijbema
Felix
F
Fromm
Thomas
T
Seyller
Rositza
R
Yakimova
Bart J
BJ
van Wees
D017554:Carbon Compounds, Inorganic / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D006108:Graphite / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D017655:Silicon Compounds / Q000737:chemistry*; D013499:Surface Properties
D017554:Carbon Compounds, Inorganic; D046911:Macromolecular Substances; D017655:Silicon Compounds; D006108:Graphite; C022088:silicon carbide