Self-assembly-induced formation of high-density silicon oxide memristor nanostructures on graphene and metal electrodes.
We report the direct formation of ordered memristor nanostructures on metal and graphene electrodes by a block copolymer self-assembly process. Optimized surface functionalization provides stacking structures of Si-containing block copolymer thin films to generate uniform memristor device structures. Both the silicon oxide film and nanodot memristors, which were formed by the plasma oxidation of the self-assembled block copolymer thin films, presented unipolar switching behaviors with appropriate set and reset voltages for resistive memory applications. This approach offers a very convenient pathway to fabricate ultrahigh-density resistive memory devices without relying on high-cost lithography and pattern-transfer processes.
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea.
Woon Ik
WI
Park
Jong Moon
JM
Yoon
Moonkyu
M
Park
Jinsup
J
Lee
Sung Kyu
SK
Kim
Jae Won
JW
Jeong
Kyungho
K
Kim
Hu Young
HY
Jeong
Seokwoo
S
Jeon
Kwang Soo
KS
No
Jeong Yong
JY
Lee
Yeon Sik
YS
Jung
D003460:Crystallization / Q000379:methods*; D017097:Electric Impedance; D004581:Electronics / Q000295:instrumentation*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D006108:Graphite / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008670:Metals / Q000737:chemistry*; D008839:Microelectrodes; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D010316:Particle Size; D012822:Silicon Dioxide / Q000737:chemistry*; D013499:Surface Properties
D046911:Macromolecular Substances; D008670:Metals; D012822:Silicon Dioxide; D006108:Graphite