Mobility and carrier density in p-type GaAs nanowires measured by transmission Raman spectroscopy.
The unambiguous measurement of carrier concentration and mobility in semiconductor nanowires remains a challenging task. This is a consequence of their one-dimensional nature and the incompatibility with Hall or van der Pauw measurements. We propose a method that allows the direct determination of mobility and carrier concentration in nanowires in a contact-less manner. We demonstrate how forward Raman scattering enables the measurement of phonon-plasmon interactions. By applying this method to p-type GaAs nanowires, we were able to directly obtain values of the carrier concentration between 3.0 × 10(17) and 7.4 × 10(18) cm(-3) and a mobility of 31 cm(2) (V s)(-1) at room temperature. This study opens the path towards the study of plasmon-phonon interactions in semiconductor nanowires.
Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, Ecole Polytechnique Fédérale de Lausanne, CH-1015, Lausanne, Switzerland.
Bernt
B
Ketterer
Emanuele
E
Uccelli
Anna
A
Fontcuberta i Morral