Enhanced performance of solution-processed amorphous LiYInZnO thin-film transistors.
Solution-processed, amorphous lithium-doped YInZnO (L-YIZO) thin-film transistors (TFTs) are investigated. An appropriate amount of Li doping significantly enhances the field-effect mobility in TFT performance (~15 times greater than that of nondoped YIZO) without controlled annealing under water vapor or O(3)/O(2) environments. The addition of Li into solution-processed YIZO semiconductors leads to improved film quality, which results from enriched metal oxygen bonding and reduced defect sites, such as oxygen vacancies and hydroxyl groups. Li doping of an amorphous ionic oxide semiconductor (AIOS) could serve as an effective strategy for low-temperature and high-performance solution-processed AIOS TFTs.
Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro Seodaemun-gu, Seoul 120-749, Republic of Korea.
Chang Young
CY
Koo
Keunkyu
K
Song
Yangho
Y
Jung
Wooseok
W
Yang
Seung-Hyun
SH
Kim
Sunho
S
Jeong
Jooho
J
Moon