The pressure induced insulator to metal transition in FeSb2.
The evolution of the ground state properties of FeSb(2) has been investigated via temperature (4.2-300 K), magnetic field (0-12 T) and pressure (0-8.8 GPa) dependent electrical resistivity studies. The temperature dependence of the resistivity follows activated behavior in the high temperature (HT) regime (T > 60 K), while variable range hopping (VRH) dictates the transport in the intermediate temperature (IT) regime (10 K > T > 45 K) and power law behavior is observed in the low temperature (LT) regime (T < 10 K). The pressure profoundly affects the resistivity in all the temperature regimes. The energy gap (Δ) extracted in the HT regime initially increases with pressure and then decreases, while the VRH parameter T(0) deduced in the IT regime is seen to decrease monotonically and vanish beyond 5 GPa leading to an insulator to metal transition (MIT) on account of delocalization of the electronic states in the gap. The analysis of the logarithmic derivative of the conductivity indicates the MIT to occur at ~6 GPa. The magnetoresistivity is found to be positive. The analysis of the resistivity behavior under pressure and magnetic field indicates that the former induces delocalization, while the latter tends to assist localization of the defect states inside the gap of FeSb(2).
Condensed Matter Physics Division, Indira Gandhi Centre for Atomic Research, Kalpakkam, Tamil Nadu, India. mani@igcar.gov.in
Awadhesh
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Mani
J
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Janaki
A T
AT
Satya
T Geetha
TG
Kumary
A
A
Bharathi