Photoelectron spectromicroscopy at chalcopyrite films.
CuInSe₂ films were prepared by MBE on GaAs (111) substrates. ZnSe and ZnO are subsequently deposited in situ by MOMBE. Interface parameters like band offsets and morphology are studied by X-ray photoelectron spectroscopy (XPS) and Low energy electron diffraction (LEED). Spectroscopic XPEEM (X-ray photoelectron emission microscopy) at the U49/2 PGM2 beamline at BESSY was used to investigate the lateral homogenity of the interface. After annealing in situ a lateral inhomogenious In diffusion is observed into the ZnSe/ZnO interface.
E-I1, Helmholtz Zentrum Berlin, 12897 Berlin, Albert-Einsteim Str 15, Germany. pettenkofer@helmholtz-berlin.de
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Pettenkofer
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Hofmann
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W
Bremsteller
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Lehmann
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Kelleter