High power (130 mW) 40 GHz 1.55 μm mode-locked distributed Bragg reflector lasers with integrated optical amplifiers.
High output power 40 GHz 1.55 μm passively mode-locked surface-etched distributed Bragg reflector (DBR) lasers with monolithically integrated semiconductor optical amplifiers are reported. These are based on an optimized AlGaInAs/InP epitaxial structure with a three quantum well active layer and an optical trap layer. The device produces near transform limited Gaussian pulses with a pulse duration of 3.3 ps. An average output power during mode-locked operation of 130 mW was achieved with a corresponding peak power of >1 W.
School of Engineering, University of Glasgow, Glasgow, UK. j.akbar.1@research.gla.ac.uk
Jehan
J
Akbar
Lianping
L
Hou
Mohsin
M
Haji
Michael J
MJ
Strain
John H
JH
Marsh
A Catrina
AC
Bryce
Anthony E
AE
Kelly