Surface-dominated conduction in a 6 nm thick Bi2Se3 thin film.
We report a direct observation of surface dominated conduction in an intrinsic Bi(2)Se(3) thin film with a thickness of six quintuple layers grown on lattice-matched CdS (0001) substrates by molecular beam epitaxy. Shubnikov-de Haas oscillations from the topological surface states suggest that the Fermi level falls inside the bulk band gap and is 53 ± 5 meV above the Dirac point, which is in agreement with 70 ± 20 meV obtained from scanning tunneling spectroscopies. Our results demonstrate a great potential of producing genuine topological insulator devices using Dirac Fermions of the surface states, when the film thickness is pushed to nanometer range.
Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA. heliang@ee.ucla.com
Liang
L
He
Faxian
F
Xiu
Xinxin
X
Yu
Marcus
M
Teague
Wanjun
W
Jiang
Yabin
Y
Fan
Xufeng
X
Kou
Murong
M
Lang
Yong
Y
Wang
Guan
G
Huang
Nai-Chang
NC
Yeh
Kang L
KL
Wang
D001729:Bismuth / Q000737:chemistry*; D004553:Electric Conductivity; D008422:Materials Testing; D008567:Membranes, Artificial; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012643:Selenium / Q000737:chemistry*; D013499:Surface Properties
D008567:Membranes, Artificial; D012643:Selenium; D001729:Bismuth