Magnetoelectric charge trap memory.
It is demonstrated that a charge-trapping layer placed in proximity to a ferromagnetic metal enables efficient electrical and optical control of the metal's magnetic properties. Retention of charge trapped inside the charge-trapping layer provides nonvolatility to the magnetoelectric effect and enhances its efficiency by an order of magnitude. As such, an engineered charge-trapping layer can be used to realize the magnetoelectric equivalent to today's pervasive charge trap flash memory technology. Moreover, by supplying trapped charges optically instead of electrically, a focused laser beam can be used to imprint the magnetic state into a continuous metal film.
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
Uwe
U
Bauer
Marek
M
Przybylski
Jürgen
J
Kirschner
Geoffrey S D
GS
Beach
D016248:Computer Storage Devices; D025802:Electric Capacitance; D004574:Electromagnetic Fields; D004867:Equipment Design; D019544:Equipment Failure Analysis; D059346:Magnets; D008422:Materials Testing; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D055672:Static Electricity