Continuous electrical tuning of the chemical composition of TaO(x)-based memristors.
TaO(x)-based memristors have recently demonstrated both subnanosecond resistance switching speeds and very high write/erase switching endurance. Here we show that the physical state variable that enables these properties is the oxygen concentration in a conduction channel, based on the measurement of the thermal coefficient of resistance of different TaO(x) memristor states and a set of reference Ta-O films of known composition. The continuous electrical tunability of the oxygen concentration in the channel, with a resolution of a few percent, was demonstrated by controlling the write currents with a one transistor-one memristor (1T1M) circuit. This study demonstrates that solid-state chemical kinetics is important for the determination of the electrical characteristics of this relatively new class of device.
Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304, USA.
Feng
F
Miao
Wei
W
Yi
Ilan
I
Goldfarb
J Joshua
JJ
Yang
Min-Xian
MX
Zhang
Matthew D
MD
Pickett
John Paul
JP
Strachan
Gilberto
G
Medeiros-Ribeiro
R Stanley
RS
Williams