title: Fast emission dynamics in droplet epitaxy GaAs ring-disk nanostructures integrated on Si.
abstract: The emission dynamics in GaAs/AlGaAs coupled ring-disk (CRD) quantum structures fabricated on silicon substrates is presented. The CRD structures are self-assembled via droplet epitaxy, a growth technique which, due to its low thermal budget, is compatible with the monolithic integration of III-V devices on Si based electronic circuits. Continuous wave, time resolved photoluminescence and theoretical calculations in the effective mass approximations are presented for the assessment of the electronic and carrier properties of the CRDs. The CRDs show a fast carrier dynamics which is expected to be suitable for ultrafast optical switching applications integrated on silicon.
authors.affiliation: LENS and Dipartimento di Fisica, Universitá di Firenze, Via Sansone 1, I-50019, Sesto Fiorentino, Italy.
authors.forename: L
authors.initials: L
authors.lastname: Cavigli
authors.forename: S
authors.initials: S
authors.lastname: Bietti
authors.forename: M
authors.initials: M
authors.lastname: Abbarchi
authors.forename: C
authors.initials: C
authors.lastname: Somaschini
authors.forename: A
authors.initials: A
authors.lastname: Vinattieri
authors.forename: M
authors.initials: M
authors.lastname: Gurioli
authors.forename: A
authors.initials: A
authors.lastname: Fedorov
authors.forename: G
authors.initials: G
authors.lastname: Isella
authors.forename: E
authors.initials: E
authors.lastname: Grilli
authors.forename: S
authors.initials: S
authors.lastname: Sanguinetti