title: Field emission from in situ-grown vertically aligned SnO2 nanowire arrays.
abstract: Vertically aligned SnO2 nanowire arrays have been in situ fabricated on a silicon substrate via thermal evaporation method in the presence of a Pt catalyst. The field emission properties of the SnO2 nanowire arrays have been investigated. Low turn-on fields of 1.6 to 2.8 V/μm were obtained at anode-cathode separations of 100 to 200 μm. The current density fluctuation was lower than 5% during a 120-min stability test measured at a fixed applied electric field of 5 V/μm. The favorable field-emission performance indicates that the fabricated SnO2 nanowire arrays are promising candidates as field emitters.
authors.affiliation: State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China. zhmwang@gmail.com.
authors.forename: Zhihua
authors.initials: Z
authors.lastname: Zhou
authors.forename: Jiang
authors.initials: J
authors.lastname: Wu
authors.forename: Handong
authors.initials: H
authors.lastname: Li
authors.forename: Zhiming
authors.initials: Z
authors.lastname: Wang