title: CMOS buried quad p-n junction photodetector for multi-wavelength analysis.
abstract: This paper presents a buried quad p-n junction (BQJ) photodetector fabricated with a HV (high-voltage) CMOS process. Multiple buried junction photodetectors are wavelength-sensitive devices developed for spectral analysis applications where a compact integrated solution is preferred over systems involving bulk optics or a spectrometer due to physical size limitations. The BQJ device presented here is designed for chip-based biochemical analyses using simultaneous fluorescence labeling of multiple analytes such as with advanced labs-on-chip or miniaturized photonics-based biosensors. Modeling and experimental measurements of the spectral response of the device are presented. A matrix-based method for estimating individual spectral components in a compound spectrum is described. The device and analysis method are validated via a test setup using individually modulated LEDs to simulate light from 4-component fluorescence emission.
authors.affiliation: Université de Sherbrooke, 2500 Boul. de l’Université, Sherbrooke, Québec J1K 2R1, Canada.
authors.forename: Charles
authors.initials: C
authors.lastname: Richard
authors.forename: Thierry
authors.initials: T
authors.lastname: Courcier
authors.forename: Patrick
authors.initials: P
authors.lastname: Pittet
authors.forename: Stéphane
authors.initials: S
authors.lastname: Martel
authors.forename: Luc
authors.initials: L
authors.lastname: Ouellet
authors.forename: Guo-Neng
authors.initials: GN
authors.lastname: Lu
authors.forename: Vincent
authors.initials: V
authors.lastname: Aimez
authors.forename: Paul G
authors.initials: PG
authors.lastname: Charette
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D008904:Miniaturization; D010783:Photometry / Q000295:instrumentation*; D012666:Semiconductors