title: Analysis of diffuse reflectivity of a highly disordered GaN nanostructure as an antireflection coating.
abstract: A highly disordered GaN nanostructure was grown by using hydride vapor phase epitaxy on an Si(100) substrate, and its diffuse reflectivity was measured in the 200-1200 nm spectral range by using an integrating sphere. A modified multiple-scattering-based model successfully explained the spectral distribution of diffuse reflectivity of this highly disordered GaN nanostructure.
authors.affiliation: Department of Physics and Research Institute for Basic Sciences, Kyung Hee University, Seoul, Korea.
authors.forename: Hyunkyu
authors.initials: H
authors.lastname: Park
authors.forename: Chinkyo
authors.initials: C
authors.lastname: Kim