title: CMOS-based carbon nanotube pass-transistor logic integrated circuits.
abstract: Field-effect transistors based on carbon nanotubes have been shown to be faster and less energy consuming than their silicon counterparts. However, ensuring these advantages are maintained for integrated circuits is a challenge. Here we demonstrate that a significant reduction in the use of field-effect transistors can be achieved by constructing carbon nanotube-based integrated circuits based on a pass-transistor logic configuration, rather than a complementary metal-oxide semiconductor configuration. Logic gates are constructed on individual carbon nanotubes via a doping-free approach and with a single power supply at voltages as low as 0.4 V. The pass-transistor logic configurarion provides a significant simplification of the carbon nanotube-based circuit design, a higher potential circuit speed and a significant reduction in power consumption. In particular, a full adder, which requires a total of 28 field-effect transistors to construct in the usual complementary metal-oxide semiconductor circuit, uses only three pairs of n- and p-field-effect transistors in the pass-transistor logic configuration.
authors.affiliation: Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing 100871, China.
authors.forename: Li
authors.initials: L
authors.lastname: Ding
authors.forename: Zhiyong
authors.initials: Z
authors.lastname: Zhang
authors.forename: Shibo
authors.initials: S
authors.lastname: Liang
authors.forename: Tian
authors.initials: T
authors.lastname: Pei
authors.forename: Sheng
authors.initials: S
authors.lastname: Wang
authors.forename: Yan
authors.initials: Y
authors.lastname: Li
authors.forename: Weiwei
authors.initials: W
authors.lastname: Zhou
authors.forename: Jie
authors.initials: J
authors.lastname: Liu
authors.forename: Lian-Mao
authors.initials: LM
authors.lastname: Peng
mesh_terms: D003199:Computer Systems; D004867:Equipment Design; D008422:Materials Testing; D008670:Metals / Q000737:chemistry; D008855:Microscopy, Electron, Scanning / Q000379:methods; D036103:Nanotechnology / Q000379:methods*; D043942:Nanotubes / Q000737:chemistry; D037742:Nanotubes, Carbon / Q000737:chemistry*; D010087:Oxides / Q000737:chemistry; D010825:Physics / Q000379:methods; D012666:Semiconductors; D012984:Software; D014173:Transistors, Electronic
chemical_list: D008670:Metals; D037742:Nanotubes, Carbon; D010087:Oxides