title: Direct observations of retention failure in ferroelectric memories.
abstract: Nonvolatile ferroelectric random-access memory uses ferroelectric thin films to save a polar state written by an electric field that is retained when the field is removed. After switching, the high energy of the domain walls separating regions of unlike polarization can drive backswitching resulting in a loss of switched domain volume, or in the case of very small domains, complete retention loss.
authors.affiliation: Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109, USA.
authors.forename: Peng
authors.initials: P
authors.lastname: Gao
authors.forename: Christopher T
authors.initials: CT
authors.lastname: Nelson
authors.forename: Jacob R
authors.initials: JR
authors.lastname: Jokisaari
authors.forename: Yi
authors.initials: Y
authors.lastname: Zhang
authors.forename: Seung-Hyub
authors.initials: SH
authors.lastname: Baek
authors.forename: Chung Wung
authors.initials: CW
authors.lastname: Bark
authors.forename: Enge
authors.initials: E
authors.lastname: Wang
authors.forename: Yuanming
authors.initials: Y
authors.lastname: Liu
authors.forename: Jiangyu
authors.initials: J
authors.lastname: Li
authors.forename: Chang-Beom
authors.initials: CB
authors.lastname: Eom
authors.forename: Xiaoqing
authors.initials: X
authors.lastname: Pan
mesh_terms: D055615:Electrical Equipment and Supplies; D007854:Lead / Q000737:chemistry; D010087:Oxides / Q000737:chemistry; D014025:Titanium / Q000737:chemistry; D015040:Zirconium / Q000737:chemistry
chemical_list: D010087:Oxides; D007854:Lead; D015040:Zirconium; D014025:Titanium