title: Low-voltage, high-extinction-ratio, Mach-Zehnder silicon optical modulator for CMOS-compatible integration.
abstract: We demonstrate a carrier-depletion Mach-Zehnder silicon optical modulator, which is compatible with CMOS fabrication process and works well at a low driving voltage. This is achieved by the optimization of the coplanar waveguide electrode to reduce the electrical signal transmission loss. At the same time, the velocity and impedance matching are both considered. The 12.5 Gbit/s data transmission experiment of the fabricated device with a 2-mm-long phase shifter is performed. The driving voltages with the swing amplitudes of 1 V and 2 V and the reverse bias voltages of 0.5 V and 0.8 V are applied to the device, respectively. The corresponding extinction ratios are 7.67 and 12.79 dB.
authors.affiliation: State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China.
authors.forename: Jianfeng
authors.initials: J
authors.lastname: Ding
authors.forename: Hongtao
authors.initials: H
authors.lastname: Chen
authors.forename: Lin
authors.initials: L
authors.lastname: Yang
authors.forename: Lei
authors.initials: L
authors.lastname: Zhang
authors.forename: Ruiqiang
authors.initials: R
authors.lastname: Ji
authors.forename: Yonghui
authors.initials: Y
authors.lastname: Tian
authors.forename: Weiwei
authors.initials: W
authors.lastname: Zhu
authors.forename: Yangyang
authors.initials: Y
authors.lastname: Lu
authors.forename: Ping
authors.initials: P
authors.lastname: Zhou
authors.forename: Rui
authors.initials: R
authors.lastname: Min
mesh_terms: D004566:Electrodes; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007368:Interferometry / Q000295:instrumentation*; D055096:Optical Devices; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*; D018511:Systems Integration; D013685:Telecommunications / Q000295:instrumentation*
chemical_list: D012825:Silicon