title: Localized surface plasmon enhanced quantum efficiency of InGaN/GaN quantum wells by Ag/SiO2 nanoparticles.
abstract: Optical properties of InGaN/GaN multi-quantum-well (MQW) structures with a nanolayer of Ag/SiO2 nanoparticle (NP) on top were studied. Modeling and optical absorption (OA) measurements prove that the NPs form localized surface plasmons (LSP) structure with a broad OA band peaked near 440-460 nm and the fringe electric field extending down to about 10 nm into the GaN layer. The presence of this NP LSP electrical field increases the photoluminescence (PL) intensity of the MQW structure by about 70% and markedly decreases the time-resolved PL (TRPL) relaxation time due to the strong coupling of MQW emission to the LSP mode.
authors.affiliation: School of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University, Jeonju 561-756, South Korea.
authors.forename: Lee-Woon
authors.initials: LW
authors.lastname: Jang
authors.forename: Dae-Woo
authors.initials: DW
authors.lastname: Jeon
authors.forename: Trilochan
authors.initials: T
authors.lastname: Sahoo
authors.forename: Dong-Seob
authors.initials: DS
authors.lastname: Jo
authors.forename: Jin-Woo
authors.initials: JW
authors.lastname: Ju
authors.forename: Seung-jae
authors.initials: SJ
authors.lastname: Lee
authors.forename: Jong-Hyeob
authors.initials: JH
authors.lastname: Baek
authors.forename: Jin-Kyu
authors.initials: JK
authors.lastname: Yang
authors.forename: Jung-Hoon
authors.initials: JH
authors.lastname: Song
authors.forename: Alexander Y
authors.initials: AY
authors.lastname: Polyakov
authors.forename: In-Hwan
authors.initials: IH
authors.lastname: Lee
mesh_terms: D003198:Computer Simulation; D017076:Computer-Aided Design; D004735:Energy Transfer; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008027:Light; D053768:Metal Nanoparticles / Q000737:chemistry* / Q000648:ultrastructure*; D008962:Models, Theoretical; D012542:Scattering, Radiation; D020349:Surface Plasmon Resonance / Q000295:instrumentation*