title: Large-area vapor-phase growth and characterization of MoS(2) atomic layers on a SiO(2) substrate.
abstract: Atomic-layered MoS(2)  is synthesized directly on SiO(2)  substrates by a scalable chemical vapor deposition method. The large-scale synthesis of an atomic-layered semiconductor directly on a dielectric layer paves the way for many facile device fabrication possibilities, expanding the important family of useful mono- or few-layer materials that possess exceptional properties, such as graphene and hexagonal boron nitride (h-BN).
authors.affiliation: Department of Mechanical Engineering & Materials Science, Rice University, Houston, Texas 77005, USA.
authors.forename: Yongjie
authors.initials: Y
authors.lastname: Zhan
authors.forename: Zheng
authors.initials: Z
authors.lastname: Liu
authors.forename: Sina
authors.initials: S
authors.lastname: Najmaei
authors.forename: Pulickel M
authors.initials: PM
authors.lastname: Ajayan
authors.forename: Jun
authors.initials: J
authors.lastname: Lou