title: 23 GHz Ge/SiGe multiple quantum well electro-absorption modulator.
abstract: We report on high speed operation of a Ge/SiGe multiple quantum well (MQW) electro-absorption modulator in a waveguide configuration. 23 GHz bandwidth is experimentally demonstrated from a 3 µm wide and 90 µm long Ge/SiGe MQW waveguide. The modulator exhibits a high extinction ratio of more than 10 dB over a wide spectral range. Moreover with a swing voltage of 1 V between 3 and 4 V, an extinction ratio as high as 9 dB can be obtained with a corresponding estimated energy consumption of 108 fJ per bit. This demonstrates the potentiality of Ge/SiGe MQWs as a building block of silicon compatible photonic integrated circuits for short distance energy efficient optical interconnections.
authors.affiliation: Institut d'Electronique Fondamentale, Univ. Paris-Sud, CNRS UMR 8622, Bât. 220, 91405 Orsay Cedex, France. papichaya.chaisakul@u-psud.fr
authors.forename: Papichaya
authors.initials: P
authors.lastname: Chaisakul
authors.forename: Delphine
authors.initials: D
authors.lastname: Marris-Morini
authors.forename: Mohamed-Saïd
authors.initials: MS
authors.lastname: Rouifed
authors.forename: Giovanni
authors.initials: G
authors.lastname: Isella
authors.forename: Daniel
authors.initials: D
authors.lastname: Chrastina
authors.forename: Jacopo
authors.initials: J
authors.lastname: Frigerio
authors.forename: Xavier
authors.initials: X
authors.lastname: Le Roux
authors.forename: Samson
authors.initials: S
authors.lastname: Edmond
authors.forename: Jean-René
authors.initials: JR
authors.lastname: Coudevylle
authors.forename: Laurent
authors.initials: L
authors.lastname: Vivien
mesh_terms: D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005857:Germanium / Q000737:chemistry*; D011789:Quantum Theory; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*; D020349:Surface Plasmon Resonance / Q000295:instrumentation*; D013685:Telecommunications / Q000295:instrumentation*
chemical_list: D005857:Germanium; D012825:Silicon