title: 25 Gbit/s silicon microring modulator based on misalignment-tolerant interleaved PN junctions.
abstract: A high-speed depletion-mode silicon-based microring modulator with interleaved PN junctions optimized for high modulation efficiency and large alignment tolerance is demonstrated. It is fabricated using standard 0.18 μm complementary metal-oxide-semiconductor processes and provides low V(π)L(π)s of 0.68 V·cm to 1.64 V·cm with a moderate doping concentration of 2 × 10(17) cm(-3). The measured modulation efficiency decreases by only 12.4% under ± 150 nm alignment errors. 25 Gbit/s non-return-zero modulation with a 4.5 dB extinction ratio is experimentally realized at a peak-to-peak driving voltage of 2 V, demonstrating the excellent performance of the novel doping profile.
authors.affiliation: Optoelectronic System Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China. xixiao@semi.ac.cn
authors.forename: Xi
authors.initials: X
authors.lastname: Xiao
authors.forename: Hao
authors.initials: H
authors.lastname: Xu
authors.forename: Xianyao
authors.initials: X
authors.lastname: Li
authors.forename: Yingtao
authors.initials: Y
authors.lastname: Hu
authors.forename: Kang
authors.initials: K
authors.lastname: Xiong
authors.forename: Zhiyong
authors.initials: Z
authors.lastname: Li
authors.forename: Tao
authors.initials: T
authors.lastname: Chu
authors.forename: Yude
authors.initials: Y
authors.lastname: Yu
authors.forename: Jinzhong
authors.initials: J
authors.lastname: Yu
mesh_terms: D016477:Artifacts; D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008904:Miniaturization; D055096:Optical Devices; D012666:Semiconductors; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D013685:Telecommunications / Q000295:instrumentation*