title: Dangling-bond logic gates on a Si(100)-(2 × 1)-H surface.
abstract: Atomic-scale Boolean logic gates (LGs) with two inputs and one output (i.e. OR, NOR, AND, NAND) were designed on a Si(100)-(2 × 1)-H surface and connected to the macroscopic scale by metallic nano-pads physisorbed on the Si(100)-(2 × 1)-H surface. The logic inputs are provided by saturating and unsaturating two surface Si dangling bonds, which can, for example, be achieved by adding and extracting two hydrogen atoms per input. Quantum circuit design rules together with semi-empirical elastic-scattering quantum chemistry transport calculations were used to determine the output current intensity of the proposed switches and LGs when they are interconnected to the metallic nano-pads by surface atomic-scale wires. Our calculations demonstrate that the proposed devices can reach ON/OFF ratios of up to 2000 for a running current in the 10 µA range.
authors.affiliation: Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602, Singapore.
authors.forename: Hiroyo
authors.initials: H
authors.lastname: Kawai
authors.forename: Francisco
authors.initials: F
authors.lastname: Ample
authors.forename: Qing
authors.initials: Q
authors.lastname: Wang
authors.forename: Yong Kiat
authors.initials: YK
authors.lastname: Yeo
authors.forename: Mark
authors.initials: M
authors.lastname: Saeys
authors.forename: Christian
authors.initials: C
authors.lastname: Joachim
mesh_terms: D006859:Hydrogen / Q000737:chemistry*; D008128:Logic; D008958:Models, Molecular; D008968:Molecular Conformation; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D006859:Hydrogen; D012825:Silicon