title: Gating electrical transport through DNA molecules that bridge between silicon nanogaps.
abstract: DNA electronic devices were prepared on silicon-based three-terminal electrodes. Both ends of DNA molecules (400 bp long, mixed sequences) were bridged via chemical bonds between the source-drain nanogap (120 nm) electrodes. S-Shaped I-V curves were obtained and the electric current can be modulated by the gate voltage. The DNA molecules act as semiconducting p-type nanowires in the three-terminal device.
authors.affiliation: Department of Materials Science and Chemistry, University of Hyogo, 2167 Shosha, Himeji 671-2201, Japan.
authors.forename: Shogo
authors.initials: S
authors.lastname: Takagi
authors.forename: Tadao
authors.initials: T
authors.lastname: Takada
authors.forename: Naoto
authors.initials: N
authors.lastname: Matsuo
authors.forename: Shin
authors.initials: S
authors.lastname: Yokoyama
authors.forename: Mitsunobu
authors.initials: M
authors.lastname: Nakamura
authors.forename: Kazushige
authors.initials: K
authors.lastname: Yamana
mesh_terms: D004247:DNA / Q000737:chemistry* / Q000648:ultrastructure*; D004579:Electron Transport; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008839:Microelectrodes; D016062:Porosity; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D004247:DNA; D012825:Silicon