title: Epitaxial ferroelectric heterostructures fabricated by selective area epitaxy of SrRuO3 using an MgO mask.
abstract: Illustration of a new high-temperature hard-mask process based on traditional lithography and selective wet-etching of MgO. The hard mask is compatible with standard nano-lithography techniques and heat treatments in excess of 1000 °C. Here, this technique is applied to produce temperature-stable contacts that give rise to low leakage, improved fatigue properties, and excellent high-temperature stability in ferroelectric thin-film capacitors.
authors.affiliation: Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois, Urbana-Champaign, Urbana, IL 61801, USA.
authors.forename: J
authors.initials: J
authors.lastname: Karthik
authors.forename: Anoop R
authors.initials: AR
authors.lastname: Damodaran
authors.forename: Lane W
authors.initials: LW
authors.lastname: Martin
mesh_terms: D004560:Electricity; D007834:Lasers; D007854:Lead / Q000737:chemistry; D008277:Magnesium Oxide / Q000737:chemistry*; D010087:Oxides / Q000737:chemistry*; D017975:Ruthenium Compounds / Q000737:chemistry*; D014025:Titanium / Q000737:chemistry; D014961:X-Ray Diffraction; D015040:Zirconium / Q000737:chemistry
chemical_list: D010087:Oxides; D017975:Ruthenium Compounds; D007854:Lead; D008277:Magnesium Oxide; D015040:Zirconium; D014025:Titanium