title: Low voltage, hysteresis free, and high mobility transistors from all-inorganic colloidal nanocrystals.
abstract: High-mobility solution-processed all-inorganic solid state nanocrystal (NC) transistors with low operation voltage and near-zero hysteresis are demonstrated using high-capacitance ZrO(x) and hydroxyl-free Cytop gate dielectric materials. The use of inorganic capping ligands (In(2)Se(4)(2-) and S(2-)) allowed us to achieve high electron mobility in the arrays of solution-processed CdSe nanocrystals. We also studied the hysteresis behavior and switching speed of NC-based field effect devices. Collectively, these analyses helped to understand the charge transport and trapping mechanisms in all-inorganic NCs arrays. Finally, we have examined the rapid thermal annealing as an approach toward high-performance solution-processed NCs-based devices and demonstrated transistor operation with mobility above 30 cm(2)/(V s) without compromising low operation voltage and hysteresis.
authors.affiliation: Department of Chemistry and James Frank Institute, University of Chicago, Chicago, Illinois 60637, USA.
authors.forename: Dae Sung
authors.initials: DS
authors.lastname: Chung
authors.forename: Jong-Soo
authors.initials: JS
authors.lastname: Lee
authors.forename: Jing
authors.initials: J
authors.lastname: Huang
authors.forename: Angshuman
authors.initials: A
authors.lastname: Nag
authors.forename: Sandrine
authors.initials: S
authors.lastname: Ithurria
authors.forename: Dmitri V
authors.initials: DV
authors.lastname: Talapin