title: Graphene-graphite oxide field-effect transistors.
abstract: Graphene's high mobility and two-dimensional nature make it an attractive material for field-effect transistors. Previous efforts in this area have used bulk gate dielectric materials such as SiO(2) or HfO(2). In contrast, we have studied the use of an ultrathin layered material, graphene's insulating analogue, graphite oxide. We have fabricated transistors comprising single or bilayer graphene channels, graphite oxide gate insulators, and metal top-gates. The graphite oxide layers show relatively minimal leakage at room temperature. The breakdown electric field of graphite oxide was found to be comparable to SiO(2), typically ~1-3 × 10(8) V/m, while its dielectric constant is slightly higher, κ ≈ 4.3.
authors.affiliation: Department of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA.
authors.forename: Brian
authors.initials: B
authors.lastname: Standley
authors.forename: Anthony
authors.initials: A
authors.lastname: Mendez
authors.forename: Emma
authors.initials: E
authors.lastname: Schmidgall
authors.forename: Marc
authors.initials: M
authors.lastname: Bockrath
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D006108:Graphite / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010087:Oxides / Q000737:chemistry; D010316:Particle Size; D014173:Transistors, Electronic
chemical_list: D010087:Oxides; D006108:Graphite