title: A graphite-like zero gap semiconductor with an interlayer separation of 2.8 Å.
abstract: The synthesis of a highly crystalline graphite-like new material with an interlayer separation of 2.8 Å is demonstrated by re-stacking GO sheets in the form of a thin film. The optical absorption spectra and electrical data indicate that the new crystal phase is an indirect zero gap semiconductor.
authors.affiliation: Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata, India.
authors.forename: Moni
authors.initials: M
authors.lastname: Baskey
authors.forename: Shyamal K
authors.initials: SK
authors.lastname: Saha
mesh_terms: D005898:Glass / Q000737:chemistry; D006108:Graphite / Q000737:chemistry*; D008958:Models, Molecular; D008968:Molecular Conformation; D010100:Oxygen / Q000737:chemistry; D012666:Semiconductors
chemical_list: D006108:Graphite; D010100:Oxygen