title: Performance enhancement of blue light-emitting diodes without an electron-blocking layer by using special designed p-type doped InGaN barriers.
abstract: In this study, the characteristics of the nitride-based blue light-emitting diode (LED) without an electron-blocking layer (EBL) are analyzed numerically. The emission spectra, carrier concentrations in the quantum wells (QWs), energy band diagrams, electrostatic fields, and internal quantum efficiency (IQE) are investigated. The simulation results indicate that the LED without an EBL has a better hole-injection efficiency and smaller electrostatic fields in its active region over the conventional LED with an AlGaN EBL. The simulation results also show that the LED without an EBL has severe efficiency droop. However, when the special designed p-type doped InGaN QW barriers are used, the efficiency droop is markedly improved and the electroluminescence (EL) emission intensity is greatly enhanced which is due to the improvement of the hole uniformity in the active region and small electron leakage.
authors.affiliation: Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China.
authors.forename: Yun-Yan
authors.initials: YY
authors.lastname: Zhang
authors.forename: Guang-Han
authors.initials: GH
authors.lastname: Fan
authors.forename: Yi-An
authors.initials: YA
authors.lastname: Yin
authors.forename: Guang-Rui
authors.initials: GR
authors.lastname: Yao
mesh_terms: D003116:Color; D003198:Computer Simulation; D017076:Computer-Aided Design; D004579:Electron Transport; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007204:Indium / Q000737:chemistry*; D008027:Light; D008029:Lighting / Q000295:instrumentation*; D008962:Models, Theoretical; D012542:Scattering, Radiation; D012666:Semiconductors
chemical_list: D007204:Indium; C513701:indium nitride