title: Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable AsxSb1-x interfaces.
abstract: InAs/GaSb type II superlattices were grown on (100) GaSb substrates by metalorganic chemical vapor deposition (MOCVD). A plane of mixed As and Sb atoms connecting the InAs and GaSb layers was introduced to compensate the tensile strain created by the InAs layer in the SL. Characterizations of the samples by atomic force microscopy and high-resolution X-ray diffraction demonstrate flat surface morphology and good crystalline quality. The lattice mismatch of approximately 0.18% between the SL and GaSb substrate is small compared to the MOCVD-grown supperlattice samples reported to date in the literature. Considerable optical absorption in 2- to 8-μm infrared region has been realized.PACS: 78.67.Pt; 81.15.Gh; 63.22.Np; 81.05.Ea.
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People's Republic of China. liusm@semi.ac.cn.
authors.forename: Li-Gong
authors.initials: LG
authors.lastname: Li
authors.forename: Shu-Man
authors.initials: SM
authors.lastname: Liu
authors.forename: Shuai
authors.initials: S
authors.lastname: Luo
authors.forename: Tao
authors.initials: T
authors.lastname: Yang
authors.forename: Li-Jun
authors.initials: LJ
authors.lastname: Wang
authors.forename: Feng-Qi
authors.initials: FQ
authors.lastname: Liu
authors.forename: Xiao-Ling
authors.initials: XL
authors.lastname: Ye
authors.forename: Bo
authors.initials: B
authors.lastname: Xu
authors.forename: Zhan-Guo
authors.initials: ZG
authors.lastname: Wang