title: Hole subbands in freestanding nanowires: six-band versus eight-band k·p modelling.
abstract: The electronic structure of GaAs, InAs and InSb nanowires is studied using the six-band and the eight-band k·p models. The effect of the different Luttinger-like parameters (in the eight-band model) on the hole band structure is investigated. Although GaAs nanostructures are often treated within a six-band model because of the large bandgap, it is shown that an eight-band model is necessary for a correct description of its hole spectrum. The camel-back structure usually found in the six-band model is not always present in the eight-band model. This camel-back structure depends on the interaction between light and heavy holes, especially the ones with opposite spin. The latter effect is less pronounced in an eight-band model, but could be very sensitive to the Kane inter-band energy (E(P)) value.
authors.affiliation: Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium. ravi.vepakomma@ua.ac.be
authors.forename: V V
authors.initials: VV
authors.lastname: Ravi Kishore
authors.forename: N
authors.initials: N
authors.lastname: Čukarić
authors.forename: B
authors.initials: B
authors.lastname: Partoens
authors.forename: M
authors.initials: M
authors.lastname: Tadić
authors.forename: F M
authors.initials: FM
authors.lastname: Peeters
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D004583:Electrons; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008956:Models, Chemical; D049329:Nanostructures / Q000737:chemistry*; D036103:Nanotechnology; D053770:Nanowires / Q000737:chemistry*; D012666:Semiconductors
chemical_list: D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide