title: From InSb nanowires to nanocubes: looking for the sweet spot.
abstract: High aspect ratios are highly desired to fully exploit the one-dimensional properties of indium antimonide nanowires. Here we systematically investigate the growth mechanisms and find parameters leading to long and thin nanowires. Variation of the V/III ratio and the nanowire density are found to have the same influence on the "local" growth conditions and can control the InSb shape from thin nanowires to nanocubes. We propose that the V/III ratio controls the droplet composition and the radial growth rate and these parameters determine the nanowire shape. A sweet spot is found for nanowire interdistances around 500 nm leading to aspect ratios up to 35. High electron mobilities up to 3.5 × 10(4) cm(2) V(-1) s(-1) enable the realization of complex spintronic and topological devices.
authors.affiliation: Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands. s.r.plissard@tue.nl
authors.forename: Sébastien R
authors.initials: SR
authors.lastname: Plissard
authors.forename: Dorris R
authors.initials: DR
authors.lastname: Slapak
authors.forename: Marcel A
authors.initials: MA
authors.lastname: Verheijen
authors.forename: Moïra
authors.initials: M
authors.lastname: Hocevar
authors.forename: George W G
authors.initials: GW
authors.lastname: Immink
authors.forename: Ilse
authors.initials: I
authors.lastname: van Weperen
authors.forename: Stevan
authors.initials: S
authors.lastname: Nadj-Perge
authors.forename: Sergey M
authors.initials: SM
authors.lastname: Frolov
authors.forename: Leo P
authors.initials: LP
authors.lastname: Kouwenhoven
authors.forename: Erik P A M
authors.initials: EP
authors.lastname: Bakkers