title: Molecular phosphorus ion source for semiconductor technology.
abstract: This paper presents results on the generation of molecular phosphorus ion beams in a hot filament ion source. Solid red phosphorous is evaporated mainly as tetra-atomic molecules up to a temperature of 800°C. Thus, one of the main conditions for producing maximum P(4)(+) fraction in the beam is to keep the temperature of the phosphorous oven, the steam line and the discharge chamber walls no greater than 800°C. The prior version of our ion source was equipped with a discharge chamber cooling system. The modified source ensured a P(4)(+) ion beam current greater than 30% of the total beam current.
authors.affiliation: Institute of High Current Electronics SB RAS, Tomsk 634055, Russia. gvi@opee.hcei.tsc.ru
authors.forename: V I
authors.initials: VI
authors.lastname: Gushenets
authors.forename: A S
authors.initials: AS
authors.lastname: Bugaev
authors.forename: E M
authors.initials: EM
authors.lastname: Oks
authors.forename: A
authors.initials: A
authors.lastname: Hershcovitch
authors.forename: T V
authors.initials: TV
authors.lastname: Kulevoy