title: Si/InGaN core/shell hierarchical nanowire arrays and their photoelectrochemical properties.
abstract: Three-dimensional hierarchical nanostructures were synthesized by the halide chemical vapor deposition of InGaN nanowires on Si wire arrays. Single phase InGaN nanowires grew vertically on the sidewalls of Si wires and acted as a high surface area photoanode for solar water splitting. Electrochemical measurements showed that the photocurrent density with hierarchical Si/InGaN nanowire arrays increased by 5 times compared to the photocurrent density with InGaN nanowire arrays grown on planar Si (1.23 V vs RHE). High-resolution transmission electron microscopy showed that InGaN nanowires are stable after 15 h of illumination. These measurements show that Si/InGaN hierarchical nanostructures are a viable high surface area electrode geometry for solar water splitting.
authors.affiliation: Department of Chemistry, University of California, Berkeley, California 94720, USA.
authors.forename: Yun Jeong
authors.initials: YJ
authors.lastname: Hwang
authors.forename: Cheng Hao
authors.initials: CH
authors.lastname: Wu
authors.forename: Chris
authors.initials: C
authors.lastname: Hahn
authors.forename: Hoon Eui
authors.initials: HE
authors.lastname: Jeong
authors.forename: Peidong
authors.initials: P
authors.lastname: Yang
mesh_terms: D004553:Electric Conductivity; D005708:Gallium / Q000737:chemistry* / Q000528:radiation effects; D007204:Indium / Q000737:chemistry* / Q000528:radiation effects; D008027:Light; D008422:Materials Testing; D049329:Nanostructures / Q000737:chemistry* / Q000528:radiation effects*; D017655:Silicon Compounds / Q000737:chemistry* / Q000528:radiation effects
chemical_list: D017655:Silicon Compounds; D007204:Indium; C473348:gallium nitride; D005708:Gallium; C513701:indium nitride; C032734:silicon nitride