title: Growth, characterization, and properties of nanographene.
abstract: A systematic study on nanographene grown directly on silicon dioxide substrates is reported. The growth is carried out in a remote plasma-enhanced chemical vapor deposition system at a low temperature of around 550 °C with methane gas as the carbon source. Atomic force microscopy is used to characterize the nanographene morphology, and Raman spectroscopy, X-ray photoelectron spectroscopy, and scanning tunneling microscopy are exploited to identify the in-plane sp(2)  bonding structures of nanographene samples. Electrical transport properties are measured at various temperatures down to 4 K. Tunneling effects, minimal conductance at the charge-neutral point, sheet resistances, and Dirac point position at different channel lengths are investigated. In addition, nanographene film possesses high transmittance properties, as indicated by transmittance spectra. Nanographene devices are fabricated from rippled structures, and show great promise for strain-gauge sensor applications.
authors.affiliation: Beijing National Laboratory for Condensed Matter, Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, P R China.
authors.forename: Wei
authors.initials: W
authors.lastname: Yang
authors.forename: Congli
authors.initials: C
authors.lastname: He
authors.forename: Lianchang
authors.initials: L
authors.lastname: Zhang
authors.forename: Yi
authors.initials: Y
authors.lastname: Wang
authors.forename: Zhiwen
authors.initials: Z
authors.lastname: Shi
authors.forename: Meng
authors.initials: M
authors.lastname: Cheng
authors.forename: Guibai
authors.initials: G
authors.lastname: Xie
authors.forename: Duoming
authors.initials: D
authors.lastname: Wang
authors.forename: Rong
authors.initials: R
authors.lastname: Yang
authors.forename: Dongxia
authors.initials: D
authors.lastname: Shi
authors.forename: Guangyu
authors.initials: G
authors.lastname: Zhang