title: Organic nonvolatile memory devices with charge trapping multilayer graphene film.
abstract: We fabricated an array-type organic nonvolatile memory device with multilayer graphene (MLG) film embedded in polyimide (PI) layers. The memory devices showed a high ON/OFF ratio (over 10(6)) and a long retention time (over 10(4) s). The switching of the Al/PI/MLG/PI/Al memory devices was due to the presence of the MLG film inserted into the PI layers. The double-log current-voltage characteristics could be explained by the space-charge-limited current conduction based on a charge-trap model. A conductive atomic force microscopy found that the conduction paths in the low-resistance ON state were distributed in a highly localized area, which was associated with a carbon-rich filamentary switching mechanism.
authors.affiliation: School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, Korea.
authors.forename: Yongsung
authors.initials: Y
authors.lastname: Ji
authors.forename: Minhyeok
authors.initials: M
authors.lastname: Choe
authors.forename: Byungjin
authors.initials: B
authors.lastname: Cho
authors.forename: Sunghoon
authors.initials: S
authors.lastname: Song
authors.forename: Jongwon
authors.initials: J
authors.lastname: Yoon
authors.forename: Heung Cho
authors.initials: HC
authors.lastname: Ko
authors.forename: Takhee
authors.initials: T
authors.lastname: Lee