title: Carbon-silicon Schottky barrier diodes.
abstract: The simple fabrication of high-performance Schottky barrier diodes between silicon and conductive carbon films (C-Films) is reported. By optimizing the interface, ideality factors as low as n = 1.22 for pyrolytic photoresist films (PPF) have been obtained. These remarkable values, which are not far away from those of commercial products are obtained repeatedly on non-optimized substrates with fully scalable processes.
authors.affiliation: School of Chemistry, Trinity College Dublin, Dublin 2, Dublin, Ireland.
authors.forename: Chanyoung
authors.initials: C
authors.lastname: Yim
authors.forename: Niall
authors.initials: N
authors.lastname: McEvoy
authors.forename: Ehsan
authors.initials: E
authors.lastname: Rezvani
authors.forename: Shishir
authors.initials: S
authors.lastname: Kumar
authors.forename: Georg S
authors.initials: GS
authors.lastname: Duesberg