title: Engineering of contact resistance between transparent single-walled carbon nanotube films and a-Si:H single junction solar cells by gold nanodots.
abstract: The viability of single-walled carbon nanotubes (SWCNTs) as a transparent conducting electrode on a-Si:H based single junction solar cells was explored. A Schottky barrier formed at a SWCNT/a-Si:H interface was removed by introducing high work function gold nanodots at the SWCNT/a-Si:H interface. This allows comparable device performance from SWCNT-electrode-based a-Si:H solar cells to that obtained by using conventional transparent conducting oxides.
authors.affiliation: IBM T.J. Watson Research Center, Yorktown Heights, New York 10598, USA. jeehwkim@us.ibm.com
authors.forename: Jeehwan
authors.initials: J
authors.lastname: Kim
authors.forename: Augustin J
authors.initials: AJ
authors.lastname: Hong
authors.forename: Bhupesh
authors.initials: B
authors.lastname: Chandra
authors.forename: George S
authors.initials: GS
authors.lastname: Tulevski
authors.forename: Devendra K
authors.initials: DK
authors.lastname: Sadana
mesh_terms: D000535:Aluminum / Q000737:chemistry; D004566:Electrodes; D006046:Gold / Q000737:chemistry*; D053768:Metal Nanoparticles / Q000737:chemistry*; D037742:Nanotubes, Carbon / Q000737:chemistry* / Q000648:ultrastructure; D012825:Silicon / Q000737:chemistry; D012993:Solar Energy; D015034:Zinc Oxide / Q000737:chemistry
chemical_list: D037742:Nanotubes, Carbon; D006046:Gold; D000535:Aluminum; D015034:Zinc Oxide; D012825:Silicon