title: The influence of post-growth annealing on the optical properties of InAs quantum dot chains grown on pre-patterned GaAs(100).
abstract: We report on the effect of post-growth thermal annealing of [011]- ,[011(-)]-, and [010]-oriented quantum dot chains grown by molecular beam epitaxy on GaAs(100) substrates patterned by UV-nanoimprint lithography. We show that the quantum dot chains experience a blueshift of the photoluminescence energy, spectral narrowing, and a reduction of the intersubband energy separation during annealing. The photoluminescence blueshift is more rapid for the quantum dot chains than for self-assembled quantum dots that were used as a reference. Furthermore, we studied polarization resolved photoluminescence and observed that annealing reduces the intrinsic optical anisotropy of the quantum dot chains and the self-assembled quantum dots.
authors.affiliation: Optoelectronics Research Centre, Tampere University of Technology, PO Box 692, FIN-33101 Tampere, Finland. teemu.hakkarainen@tut.fi
authors.forename: T V
authors.initials: TV
authors.lastname: Hakkarainen
authors.forename: V
authors.initials: V
authors.lastname: Polojärvi
authors.forename: A
authors.initials: A
authors.lastname: Schramm
authors.forename: J
authors.initials: J
authors.lastname: Tommila
authors.forename: M
authors.initials: M
authors.lastname: Guina