title: Thermal stability and surface passivation of Ge nanowires coated by epitaxial SiGe shells.
abstract: Epitaxial growth of a highly strained, coherent SiGe alloy shell around a Ge nanowire core is investigated as a method to achieve surface passivation and carrier confinement, important in realizing nanowire devices. The high photoluminescence intensity observed from the core-shell nanowires with spectral features similar to that of bulk Ge indicates effective surface passivation. Thermal stability of these core-shell heterostructures has been systematically investigated, with a method demonstrated to avoid misfit strain relaxation during postgrowth annealing.
authors.affiliation: Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA.
authors.forename: Shu
authors.initials: S
authors.lastname: Hu
authors.forename: Yoko
authors.initials: Y
authors.lastname: Kawamura
authors.forename: Kevin C Y
authors.initials: KC
authors.lastname: Huang
authors.forename: Yanying
authors.initials: Y
authors.lastname: Li
authors.forename: Ann F
authors.initials: AF
authors.lastname: Marshall
authors.forename: Kohei M
authors.initials: KM
authors.lastname: Itoh
authors.forename: Mark L
authors.initials: ML
authors.lastname: Brongersma
authors.forename: Paul C
authors.initials: PC
authors.lastname: McIntyre
mesh_terms: D003460:Crystallization / Q000379:methods*; D005857:Germanium / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties; D013696:Temperature
chemical_list: D046911:Macromolecular Substances; D005857:Germanium; D012825:Silicon