title: Photovoltaic device on a single ZnO nanowire p-n homojunction.
abstract: A photovoltaic device was successfully grown solely based on the single ZnO p-n homojunction nanowire. The ZnO nanowire p-n diode consists of an as-grown n-type segment and an in situ arsenic-doped p-type segment. This p-n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased conditions. Our results demonstrate that the present ZnO p-n homojunction nanowire can be used as a self-powered ultraviolet photodetector as well as a photovoltaic cell, which can also be used as an ultralow electrical power source for nanoscale electronic, optoelectronic and medical devices.
authors.affiliation: Quantum-Functional Semiconductor Research Center, Dongguk University-Seoul, Seoul 100-715, Korea.
authors.forename: Hak Dong
authors.initials: HD
authors.lastname: Cho
authors.forename: Anvar S
authors.initials: AS
authors.lastname: Zakirov
authors.forename: Shavkat U
authors.initials: SU
authors.lastname: Yuldashev
authors.forename: Chi Won
authors.initials: CW
authors.lastname: Ahn
authors.forename: Yung Kee
authors.initials: YK
authors.lastname: Yeo
authors.forename: Tae Won
authors.initials: TW
authors.lastname: Kang