title: Metal organic chemical vapor deposition of phase change Ge1Sb2Te4 nanowires.
abstract: The self-assembly of Ge(1)Sb(2)Te(4) nanowires (NWs) for phase change memories application was achieved by metal organic chemical vapor deposition, catalyzed by Au nanoislands in a narrow range of temperatures and deposition pressures. In the optimized conditions of 400 °C, 50 mbar, the NWs are Ge(1)Sb(2)Te(4) single hexagonal crystals. Phase change memory switching was reversibly induced by nanosecond current pulses through metal-contacted NWs with threshold voltage of about 1.35 V.
authors.affiliation: Laboratorio MDM, IMM-CNR, Unità di Agrate Brianza, Via C. Olivetti 2, 20864 Agrate Brianza, (MB), Italy. massimo.longo@mdm.imm.cnr.it
authors.forename: Massimo
authors.initials: M
authors.lastname: Longo
authors.forename: Roberto
authors.initials: R
authors.lastname: Fallica
authors.forename: Claudia
authors.initials: C
authors.lastname: Wiemer
authors.forename: Olivier
authors.initials: O
authors.lastname: Salicio
authors.forename: Marco
authors.initials: M
authors.lastname: Fanciulli
authors.forename: Enzo
authors.initials: E
authors.lastname: Rotunno
authors.forename: Laura
authors.initials: L
authors.lastname: Lazzarini
mesh_terms: D003460:Crystallization / Q000379:methods*; D005740:Gases / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008670:Metals / Q000737:chemistry*; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D009930:Organic Chemicals / Q000737:chemistry*; D010316:Particle Size; D044367:Phase Transition; D013499:Surface Properties
chemical_list: D005740:Gases; D046911:Macromolecular Substances; D008670:Metals; D009930:Organic Chemicals