title: Impact of oxygen plasma treatment on the device performance of zinc oxide nanoparticle-based thin-film transistors.
abstract: Thin-films of zinc oxide nanoparticles were investigated by photoluminescence spectroscopy and a broad defect-related yellow-green emission was observed. Oxygen plasma treatment was applied in order to reduce the number of defects, and the emission intensity was quenched to 4% of the initial value. Thin-film transistors that incorporate the nanoparticles as active semiconducting layers show an improved device performance after oxygen plasma treatment. The maximum drain current and the charge carrier mobility increased more than 1 order of magnitude up to a nominal value of 23 cm(2) V(-1) s(-1) and the threshold voltage was lowered.
authors.affiliation: Organic Materials & Devices (OMD), Department of Materials Science, University Erlangen-Nürnberg, Martensstrasse 7, 91058 Erlangen, Germany.
authors.forename: Hendrik
authors.initials: H
authors.lastname: Faber
authors.forename: Johannes
authors.initials: J
authors.lastname: Hirschmann
authors.forename: Martin
authors.initials: M
authors.lastname: Klaumünzer
authors.forename: Björn
authors.initials: B
authors.lastname: Braunschweig
authors.forename: Wolfgang
authors.initials: W
authors.lastname: Peukert
authors.forename: Marcus
authors.initials: M
authors.lastname: Halik