title: Al(x)Ga(1-x)N-based deep-ultraviolet 320×256 focal plane array.
abstract: We report the synthesis, fabrication, and testing of a 320×256 focal plane array (FPA) of back-illuminated, solar-blind, p-i-n, Al(x)Ga(1-x)N-based detectors, fully realized within our research laboratory. We implemented a pulse atomic layer deposition technique for the metalorganic chemical vapor deposition growth of thick, high-quality, crack-free, high Al composition Al(x)Ga(1-x)N layers. The FPA is hybridized to a matching ISC 9809 readout integrated circuit and operated in a SE-IR camera system. Solar-blind operation is observed throughout the array with peak detection occurring at wavelengths of 256 nm and lower, and falling off three orders of magnitude by ~285 nm. By developing an opaque masking technology, the visible response of the ROIC is significantly reduced; thus the need for external filtering to achieve solar- and visible-blind operation is eliminated. This allows the FPA to achieve high external quantum efficiency (EQE); at 254 nm, average pixels showed unbiased peak responsivity of 75 mA/W, which corresponds to an EQE of ~37%. Finally, the uniformity of the FPA and imaging properties are investigated.
authors.affiliation: Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, USA.
authors.forename: Erdem
authors.initials: E
authors.lastname: Cicek
authors.forename: Zahra
authors.initials: Z
authors.lastname: Vashaei
authors.forename: Edward Kwei-wei
authors.initials: EK
authors.lastname: Huang
authors.forename: Ryan
authors.initials: R
authors.lastname: McClintock
authors.forename: Manijeh
authors.initials: M
authors.lastname: Razeghi