title: Rhenium ion beam for implantation into semiconductors.
abstract: At the ion source test bench in Institute for Theoretical and Experimental Physics the program of ion source development for semiconductor industry is in progress. In framework of the program the Metal Vapor Vacuum Arc ion source for germanium and rhenium ion beam generation was developed and investigated. It was shown that at special conditions of ion beam implantation it is possible to fabricate not only homogenous layers of rhenium silicides solid solutions but also clusters of this compound with properties of quantum dots. At the present moment the compound is very interesting for semiconductor industry, especially for nanoelectronics and nanophotonics, but there is no very developed technology for production of nanostructures (for example quantum sized structures) with required parameters. The results of materials synthesis and exploration are presented.
authors.affiliation: Institute for Theoretical and Experimental Physics, Moscow, Russia. kulevoy@itep.ru
authors.forename: T V
authors.initials: TV
authors.lastname: Kulevoy
authors.forename: N N
authors.initials: NN
authors.lastname: Gerasimenko
authors.forename: D N
authors.initials: DN
authors.lastname: Seleznev
authors.forename: P A
authors.initials: PA
authors.lastname: Fedorov
authors.forename: A A
authors.initials: AA
authors.lastname: Temirov
authors.forename: M E
authors.initials: ME
authors.lastname: Alyoshin
authors.forename: S V
authors.initials: SV
authors.lastname: Kraevsky
authors.forename: D I
authors.initials: DI
authors.lastname: Smirnov
authors.forename: P E
authors.initials: PE
authors.lastname: Yakushin
authors.forename: V V
authors.initials: VV
authors.lastname: Khoroshilov