title: Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process.
abstract: We investigate the growth procedures for achieving taper-free and kinked germanium nanowires epitaxially grown on silicon substrates by chemical vapor deposition. Singly and multiply kinked germanium nanowires consisting of <111> segments were formed by employing a reactant gas purging process. Unlike non-epitaxial kinked nanowires, a two-temperature process is necessary to maintain the taper-free nature of segments in our kinked germanium nanowires on silicon. As an application, nanobridges formed between (111) side walls of V-grooved (100) silicon substrates have been demonstrated.
authors.affiliation: Department of Physics, Dong-A University, Hadan-2-dong, Sahagu, Busan 604-714, Korea.
authors.forename: Jung Hyuk
authors.initials: JH
authors.lastname: Kim
authors.forename: So Ra
authors.initials: SR
authors.lastname: Moon
authors.forename: Yong
authors.initials: Y
authors.lastname: Kim
authors.forename: Zhi Gang
authors.initials: ZG
authors.lastname: Chen
authors.forename: Jin
authors.initials: J
authors.lastname: Zou
authors.forename: Duk Yong
authors.initials: DY
authors.lastname: Choi
authors.forename: Hannah J
authors.initials: HJ
authors.lastname: Joyce
authors.forename: Qiang
authors.initials: Q
authors.lastname: Gao
authors.forename: H Hoe
authors.initials: HH
authors.lastname: Tan
authors.forename: Chennupati
authors.initials: C
authors.lastname: Jagadish