title: Regenerable resistive switching in silicon oxide based nanojunctions.
abstract: A nanomemristor based on SiO(2)  is fabricated in situ with spatial control at the nanoscale. The proposed system exhibits peculiar properties such as the possibility to be regenerated after being stressed or damaged and the possibility to expose the metal and the oxide interfaces by removing the top electrodes.
authors.affiliation: Consiglio Nazionale delle Ricerche-Istituto per lo Studio dei Materiali, Nanostrutturati (CNR-ISMN), Bologna, Italy. m.cavallini@bo.ismn.cnr.it
authors.forename: Massimiliano
authors.initials: M
authors.lastname: Cavallini
authors.forename: Zahra
authors.initials: Z
authors.lastname: Hemmatian
authors.forename: Alberto
authors.initials: A
authors.lastname: Riminucci
authors.forename: Mirko
authors.initials: M
authors.lastname: Prezioso
authors.forename: Vittorio
authors.initials: V
authors.lastname: Morandi
authors.forename: Mauro
authors.initials: M
authors.lastname: Murgia
mesh_terms: D017097:Electric Impedance; D055615:Electrical Equipment and Supplies; D004566:Electrodes; D004867:Equipment Design; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D012822:Silicon Dioxide / Q000737:chemistry*
chemical_list: D012822:Silicon Dioxide