title: Topology evolution of graphene in chemical vapor deposition, a combined theoretical/experimental approach toward shape control of graphene domains.
abstract: Morphology control of thin film relies on understanding multiple ongoing processes during deposition and growth. To reveal the shape evolution of graphene domains on copper surfaces in chemical vapor deposition (CVD), a combinative study is performed on the CVD growth of graphene on copper surfaces. To identify the factors that influence the adsorption and diffusion of carbon atoms and further determine the domain shape, simulations based on kinetic Monte Carlo techniques are carried out. The results reveal the dependence of the graphene domain shapes on the crystalline orientation of the underlying copper substrate surfaces.
authors.affiliation: Department of Mechanical Engineering, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Tsinghua University, Beijing 100084, People's Republic of China.
authors.forename: Lili
authors.initials: L
authors.lastname: Fan
authors.forename: Jie
authors.initials: J
authors.lastname: Zou
authors.forename: Zhen
authors.initials: Z
authors.lastname: Li
authors.forename: Xiao
authors.initials: X
authors.lastname: Li
authors.forename: Kunlin
authors.initials: K
authors.lastname: Wang
authors.forename: Jinquan
authors.initials: J
authors.lastname: Wei
authors.forename: Minlin
authors.initials: M
authors.lastname: Zhong
authors.forename: Dehai
authors.initials: D
authors.lastname: Wu
authors.forename: Zhiping
authors.initials: Z
authors.lastname: Xu
authors.forename: Hongwei
authors.initials: H
authors.lastname: Zhu