title: Nanostructure and internal strain distribution in porous silicon.
abstract: Porous silicon (PS) layers with different degrees of porosity have been fabricated and their nanostructure has been investigated using complementary methods as FE-SEM (field emission scanning electron microscopy), SAXS (small-angle X-ray scattering), and Raman spectroscopy. Correlation of these results with strain analyses is also required for envisaged applications in MEMS technology. Symmetrical and asymmetrical rocking curves obtained by high-resolution X-ray diffraction completed with reciprocal space maps (RSMs) explain the features observed in Raman spectra: the PS film in-depth contains two layers-bulk and highly strained superficial layer, between them being a graded strain layer.
authors.affiliation: National Institute for Research and Development in Microtechnologies (IMT-Bucharest), Erou lancu Nicolae str 126A, 077190, Bucharest, Romania.
authors.forename: Mihaela
authors.initials: M
authors.lastname: Miu
authors.forename: Mihai
authors.initials: M
authors.lastname: Danila
authors.forename: Irina
authors.initials: I
authors.lastname: Kleps
authors.forename: Adina
authors.initials: A
authors.lastname: Bragaru
authors.forename: Monica
authors.initials: M
authors.lastname: Simion