title: Tunnel field-effect transistors based on InP-GaAs heterostructure nanowires.
abstract: We present tunneling field-effect transistors fabricated from InP-GaAs heterostructure nanowires with an n-i-p doping profile, where the intrinsic InP region is modulated by a top gate. The devices show an inverse subthreshold slope down to 50 mV/dec averaged over two decades with an on/off current ratio of approximately 10(7) for a gate voltage swing (V(GS)) of 1 V and an on-current of 2.2 μA/μm. Low-temperature measurements suggest a mechanism of trap-assisted tunneling, possibly explained by a narrow band gap segment of InGaAsP.
authors.affiliation: Division of Solid State Physics, Lund University, Box 118, S-22100, Lund, Sweden. bahram.ganjipour@ftf.lth.se
authors.forename: Bahram
authors.initials: B
authors.lastname: Ganjipour
authors.forename: Jesper
authors.initials: J
authors.lastname: Wallentin
authors.forename: Magnus T
authors.initials: MT
authors.lastname: Borgström
authors.forename: Lars
authors.initials: L
authors.lastname: Samuelson
authors.forename: Claes
authors.initials: C
authors.lastname: Thelander