title: Reliable fabrication of 3 nm gaps between  nanoelectrodes by electron-beam  lithography.
abstract: The reliable fabrication of nanoelectrode pairs with predefined separations in the few nanometer range is an essential prerequisite for future nanoelectronic devices. Here we demonstrate a fine-tuned electron-beam lithographic (EBL) fabrication route which is suitable for defining nanoelectrode pairs with a gap size down to 3 ± 1 nm and with a yield of 55%. This achievement is based on an optimized two-layer resist system in combination with an adopted developer system, as well as on an elaborated nanoelectrode pattern design taking into consideration the EBL inherent proximity effect. Thus, even a structural control in the nanometer scale is achieved in the EBL process.
authors.affiliation: Peter-Grünberg Institut and JARA-FIT, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany.
authors.forename: Marcel
authors.initials: M
authors.lastname: Manheller
authors.forename: Stefan
authors.initials: S
authors.lastname: Trellenkamp
authors.forename: Rainer
authors.initials: R
authors.lastname: Waser
authors.forename: Silvia
authors.initials: S
authors.lastname: Karthäuser