title: Influence of substrates on the formation of the TiSi nanowire by atmosphere pressure chemical vapor deposition.
abstract: TiSi nanowires were deposited on both Si(111) and glass substrates by using SiH4, TiCl4 and N2 as the Si, Ti precursors and diluted gas respectively through atmosphere pressure chemical vapor deposition (APCVD) method. Effects of the substrates on formation of the nanowires were investigated. The results show that the nanowires can be formed on both Si(111) and glass substrates at ratio of SiH4/TiCl4 of 4. However, the quantities of the TiSi nanowires that formed with glass substrate are less than that with Si(111) substrate. The nanowires formed with glass substrate has length of 2-3 microm and diameters of 15-25 nm while that is 4-5 microm and 25-35 nm respectively with Si(111) substrate. Great quantities of the titanium silicide nanowires with relative higher contents of the C54 TiSi2 crystalline phase underneath can be obtained through improving the deposition conditions.
authors.affiliation: State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China.
authors.forename: Zhaodi
authors.initials: Z
authors.lastname: Ren
authors.forename: Mei
authors.initials: M
authors.lastname: Shen
authors.forename: Gaorong
authors.initials: G
authors.lastname: Han
authors.forename: Wenjian
authors.initials: W
authors.lastname: Weng
authors.forename: Ning
authors.initials: N
authors.lastname: Ma
authors.forename: Piyi
authors.initials: P
authors.lastname: Du