title: Effect of annealing treatment on electroluminescence from GaN/Si nanoheterostructure array.
abstract: A GaN/Si nanoheterostructure array was prepared by growing GaN nanostructures on silicon nanoporous pillar array (Si-NPA). Based on as-grown and annealed GaN/Si-NPA, two light-emitting diodes (LEDs) were fabricated. It was found that after the annealing treatment, both the turn-on voltage and the leakage current density of the nanoheterostructure varied greatly, together with the electroluminescence (EL) changed from a yellow band to a near infrared band. The EL variation was attributed to the radiative transition being transformed from a defect-related recombination in GaN to an interfacial recombination of GaN/Si-NPA. Ours might have provided an effective approach for fabricating GaN/Si-based LEDs with different emission wavelengths.
authors.affiliation: Department of Physics and Laboratory of Materials Physics, Zhengzhou University, Zhengzhou 450052, China.
authors.forename: Chang Bao
authors.initials: CB
authors.lastname: Han
authors.forename: Chuan
authors.initials: C
authors.lastname: He
authors.forename: Xiao Bo
authors.initials: XB
authors.lastname: Meng
authors.forename: Ya Rui
authors.initials: YR
authors.lastname: Wan
authors.forename: Yong Tao
authors.initials: YT
authors.lastname: Tian
authors.forename: Ying Jiu
authors.initials: YJ
authors.lastname: Zhang
authors.forename: Xin Jian
authors.initials: XJ
authors.lastname: Li
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D006244:Hardness; D006358:Hot Temperature; D008163:Luminescent Measurements / Q000295:instrumentation*; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry*
chemical_list: C473348:gallium nitride; D005708:Gallium; D012825:Silicon