title: Field emission from nanostructured AlN/GaN films on Si substrate prepared by pulsed laser deposition.
abstract: Nanostructured AIN/GaN films with different thickness are synthesized on Si substrates by pulsed laser deposition (PLD). GaN and AIN single-layer films are also deposited for comparison. It is found that the turn-on field of the nanostructured AIN/GaN films is considerably decreased 2 orders of magnitude than that of single-layer films. The improvement of field emission (FE) characteristics is attributed to the quantum structure effects, which supplies a favorable location of electron emission and enhances tunneling ability. We show that by tuning the thickness of AIN/GaN, various FE characteristics can be obtained. It indicates that the optimal thickness of the nanostructured AIN/GaN films exists for their best field emission performance.
authors.affiliation: Laboratory of Thin Film Materials, College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Zhao
authors.forename: Ruzhi
authors.initials: R
authors.lastname: Wang
authors.forename: Fengying
authors.initials: F
authors.lastname: Wang
authors.forename: Siying
authors.initials: S
authors.lastname: Chen
authors.forename: Bo
authors.initials: B
authors.lastname: Wang
authors.forename: Hao
authors.initials: H
authors.lastname: Wang
authors.forename: Hui
authors.initials: H
authors.lastname: Yan