title: n-Type reduced graphene oxide field-effect transistors (FETs) from photoactive metal oxides.
abstract: Graphene is of considerable interest as a next-generation semiconductor material to serve as a possible substitute for silicon. For real device applications with complete circuits, effective n-type graphene field effect transistors (FETs) capable of operating even under atmospheric conditions are necessary. In this study, we investigated n-type reduced graphene oxide (rGO) FETs of photoactive metal oxides, such as TiO(2)  and ZnO. These metal oxide doped FETs showed slight n-type electric properties without irradiation. Under UV light these photoactive materials readily generated electrons and holes, and the generated electrons easily transferred to graphene channels. As a result, the graphene FET showed strong n-type electric behavior and its drain current was increased. These n-doping effects showed saturation curves and slowly returned back to their original state in darkness. Finally, the n-type rGO FET was also highly stable in air due to the use of highly resistant metal oxides and robust graphene as a channel.
authors.affiliation: NCRI, Center for Smart Molecular Memory, Department of Chemistry, Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Korea.
authors.forename: Heejoun
authors.initials: H
authors.lastname: Yoo
authors.forename: Youngmin
authors.initials: Y
authors.lastname: Kim
authors.forename: Junghyun
authors.initials: J
authors.lastname: Lee
authors.forename: Hyemi
authors.initials: H
authors.lastname: Lee
authors.forename: Yeoheung
authors.initials: Y
authors.lastname: Yoon
authors.forename: Giyoun
authors.initials: G
authors.lastname: Kim
authors.forename: Hyoyoung
authors.initials: H
authors.lastname: Lee