title: Naphtho[2,1-b:6,5-b']difuran: a versatile motif available for solution-processed single-crystal organic field-effect transistors with high hole mobility.
abstract: We here report naphtho[2,1-b:6,5-b']difuran derivatives as new p-type semiconductors that achieve hole mobilities of up to 3.6 cm(2) V(-1) s(-1) along with high I(on)/I(off) ratios in solution-processed single-crystal organic field-effect transistors. These features originate from the dense crystal packing and the resulting large intermolecular π-orbital overlap as well as from the small reorganization energy, all of which originate from the small radius of an oxygen atom.
authors.affiliation: Department of Chemistry, School of Science, The University of Tokyo, Tokyo, Japan.
authors.forename: Chikahiko
authors.initials: C
authors.lastname: Mitsui
authors.forename: Junshi
authors.initials: J
authors.lastname: Soeda
authors.forename: Kazumoto
authors.initials: K
authors.lastname: Miwa
authors.forename: Hayato
authors.initials: H
authors.lastname: Tsuji
authors.forename: Jun
authors.initials: J
authors.lastname: Takeya
authors.forename: Eiichi
authors.initials: E
authors.lastname: Nakamura