title: Spin drift velocity, polarization, and current-driven domain-wall motion in (Ga,Mn)(As,P).
abstract: Current-driven domain-wall motion is studied in (Ga,Mn)(As,P) ferromagnetic semiconducting tracks with perpendicular anisotropy. A linear steady state flow regime is observed over a large temperature range of the ferromagnetic phase (0.1T(c)<T<T(c)). Close to 0 K, the domain-wall velocity is found to coincide with the spin drift velocity. This result is obtained below the intrinsic threshold for domain-wall motion which implies a nonadiabatic contribution to the spin transfer torque. The current spin polarization is deduced close to 0 K and to T(c). It suggests that the temperature dependence of the spin polarization can be inferred from the domain-wall dynamics.
authors.affiliation: Laboratoire de Physique des Solides, Université Paris-Sud, CNRS, 91405 Orsay, France.
authors.forename: J
authors.initials: J
authors.lastname: Curiale
authors.forename: A
authors.initials: A
authors.lastname: Lemaître
authors.forename: C
authors.initials: C
authors.lastname: Ulysse
authors.forename: G
authors.initials: G
authors.lastname: Faini
authors.forename: V
authors.initials: V
authors.lastname: Jeudy