title: The research progress of quantum dot lasers and photodetectors in China.
abstract: Self-assembled In(Ga)As/GaAs quantum dots (QDs), known as "artificial atoms" for their fully quantized electronic states, show unique physical properties and new prospects for applications. Based on the QDs, an increasing number of leading laboratories on the world engage in developing novel optoelectronic devices with special advantages over existing devices. This paper reviews the current research developments in self-assembled QD devices in China, covering QD lasers and inter sub-level QD photodetectors. QD devices in China are undergoing a rapid advance and have achieved the world's best results in terms of certain characteristics.
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China.
authors.forename: Peng-Fei
authors.initials: PF
authors.lastname: Xu
authors.forename: Hai-Ming
authors.initials: HM
authors.lastname: Ji
authors.forename: Tao
authors.initials: T
authors.lastname: Yang
authors.forename: Bo
authors.initials: B
authors.lastname: Xu
authors.forename: Wen-Quan
authors.initials: WQ
authors.lastname: Ma
authors.forename: Zhanguo
authors.initials: Z
authors.lastname: Wang