title: Nanocrystalline graphite films nucleation by the radio frequency bias pretreatment.
abstract: New method for nucleation of different nanocrystalline carbon films upon monocrystalline Si substrate was proposed. The process is based on a combination of microwave and radio frequency plasma assisted chemical vapor deposition methods. Potential of the method for nucleation was demonstrated by deposition of nanocrystalline diamond film in pure microwave plasma in one process, immediately after "seeding" procedure. The method was also used for growth of nanocrystalline graphite (NCG) films, which are currently under intensive investigation due to their exceptional electronic properties, particularly fine electron emission characteristics. Deposited NCG films have demonstrated remarkable electron field emission properties having current density of up to 10 A/cm2. The films have also possessed good adhesion to silicon substrate. Carbon films and nucleation layer were characterized by scanning electron microscopy, transmission electron microscopy and Raman spectroscopy.
authors.affiliation: Institute of Nuclear Physics, Moscow State University, Moscow 119992, Russia.
authors.forename: V V
authors.initials: VV
authors.lastname: Dvorkin
authors.forename: N N
authors.initials: NN
authors.lastname: Dzbanovsky
authors.forename: V A
authors.initials: VA
authors.lastname: Krivchenko
authors.forename: N V
authors.initials: NV
authors.lastname: Suetin
authors.forename: A T
authors.initials: AT
authors.lastname: Rakhimov
authors.forename: M A
authors.initials: MA
authors.lastname: Timofeyev
authors.forename: A V
authors.initials: AV
authors.lastname: Bespalov
authors.forename: O L
authors.initials: OL
authors.lastname: Golikova