title: Silicon photodiodes with high photoconductive gain at room temperature.
abstract: Silicon photodiodes with high photoconductive gain are demonstrated. The photodiodes are fabricated in a complementary metal-oxide-semiconductor (CMOS)-compatible process. The typical room temperature responsivity at 940 nm is >20 A/W and the dark current density is ≈ 100 nA/cm2 at 5 V reverse bias, yielding a detectivity of ≈ 10(14) Jones. These photodiodes are good candidates for applications that require high detection sensitivity and low bias operation.
authors.affiliation: SiOnyx Inc., 100 Cummings Center, Suite 243F, Beverly, MA 01915, USA. xli@sionyx.com
authors.forename: X
authors.initials: X
authors.lastname: Li
authors.forename: J E
authors.initials: JE
authors.lastname: Carey
authors.forename: J W
authors.initials: JW
authors.lastname: Sickler
authors.forename: M U
authors.initials: MU
authors.lastname: Pralle
authors.forename: C
authors.initials: C
authors.lastname: Palsule
authors.forename: C J
authors.initials: CJ
authors.lastname: Vineis
mesh_terms: D000669:Amplifiers, Electronic; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008027:Light; D010783:Photometry / Q000295:instrumentation*; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*; D013696:Temperature
chemical_list: D012825:Silicon