title: Tuning the growth orientation of epitaxial films by interface chemistry.
abstract: The support of epitaxial films frequently determines their crystallographic orientation, which is of crucial importance for their properties. We report a novel way to alter the film orientation without changing the substrate. We show for the growth of CoO on the Ir(100) surface that, while the oxide grows in (111) orientation on the bare substrate, the orientation switches to (100) by introducing a single (or a few) monolayer(s) of Co between the oxide and substrate. This tunability of the orientation of epitaxial films by the appropriate choice of interface chemistry most likely is a general feature.
authors.affiliation: Lehrstuhl für Festkörperphysik, Universität Erlangen-Nürnberg, Erlangen, Germany.
authors.forename: Matthias
authors.initials: M
authors.lastname: Gubo
authors.forename: Christina
authors.initials: C
authors.lastname: Ebensperger
authors.forename: Wolfgang
authors.initials: W
authors.lastname: Meyer
authors.forename: Lutz
authors.initials: L
authors.lastname: Hammer
authors.forename: Klaus
authors.initials: K
authors.lastname: Heinz
authors.forename: Florian
authors.initials: F
authors.lastname: Mittendorfer
authors.forename: Josef
authors.initials: J
authors.lastname: Redinger