title: A wide spectral range single-photon avalanche diode fabricated in an advanced 180 nm CMOS technology.
abstract: We present a single-photon avalanche diode (SPAD) with a wide spectral range fabricated in an advanced 180 nm CMOS process. The realized SPAD achieves 20 % photon detection probability (PDP) for wavelengths ranging from 440 nm to 820 nm at an excess bias of 4 V, with 30 % PDP at wavelengths from 520 nm to 720 nm. Dark count rates (DCR) are at most 5 kHz, which is 30 Hz/μm2, at an excess bias of 4V when we measure 10 μm diameter active area structure. Afterpulsing probability, timing jitter, and temperature effects on DCR are also presented.
authors.affiliation: Faculty of Electrical Engineering, TU Delft Mekelweg 4, 2628 CD Delft, The Netherlands. s.mandai@tudelft.nl
authors.forename: Shingo
authors.initials: S
authors.lastname: Mandai
authors.forename: Matthew W
authors.initials: MW
authors.lastname: Fishburn
authors.forename: Yuki
authors.initials: Y
authors.lastname: Maruyama
authors.forename: Edoardo
authors.initials: E
authors.lastname: Charbon
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D010363:Pattern Recognition, Automated / Q000379:methods*; D010783:Photometry / Q000295:instrumentation*; D017785:Photons; D012666:Semiconductors