title: Simulation study on a new dual-material nanowire MOS surrounding-gate transistor.
abstract: In this paper, a novel field effect nanowire MOS transistor taking advantage of both dual-material gate and surrounding gate is proposed and performance characteristics are demonstrated numerically in detail. Surrounding-gate transistor is known to be used to enhance the electrostatic control of the channel, and dual-material-gate structure is extended from split-gate field effect transistor to obtain larger current and better short-channel performance. Three dimensional device simulations with Sentaurus Device are performed on this dual-material surrounding-gate transistor. Higher driving current, high ION/IOFF ratio and suppressed short-channel effects are obtained with this novel device structure.
authors.affiliation: Electrical Engineering and Computer Science, Peking University, Beijing 100871, China.
authors.forename: Wang
authors.initials: W
authors.lastname: Zhou
authors.forename: Lining
authors.initials: L
authors.lastname: Zhang
authors.forename: Lin
authors.initials: L
authors.lastname: Chen
authors.forename: Yiwen
authors.initials: Y
authors.lastname: Xu
authors.forename: Wen
authors.initials: W
authors.lastname: Wu
authors.forename: Jin
authors.initials: J
authors.lastname: He