title: Decrease of the OFF state current of carbon nanotube field effect transistors via continuous repeated gate sweeping.
abstract: Continuous repeated gate sweeping incorporated with substrate etching step is utilized to decrease the OFF state current in single-walled carbon nanotube field effect transistors with bundled carbon nanotubes. In particular, the effects of continuous repeated gate sweeping on transfer characteristic of transistors are examined. The etching step creates suspension in transistors at contact with metal electrodes as well as causing some single-walled carbon nanotubes to dramatically burn off by electrical current. By repeating gate sweeping, source-drain current gets smaller and smaller. This will eventually lead to the OFF state current less than 2 nA. Defects in the lattice of single-walled carbon nanotubes introduced by multiple gate sweeping could be the reason for this phenomenon. Contribution from possible hole trapping is also considered.
authors.affiliation: Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China.
authors.forename: Ying
authors.initials: Y
authors.lastname: Feng
authors.forename: Shihua
authors.initials: S
authors.lastname: Huang
authors.forename: Kai
authors.initials: K
authors.lastname: Kang
authors.forename: Yanfang
authors.initials: Y
authors.lastname: Qi
authors.forename: Yuguang
authors.initials: Y
authors.lastname: Feng
authors.forename: Fangtian
authors.initials: F
authors.lastname: You