title: Preparation and field-emission of TaSe2 nanobelt quasi-arrays, and electrical transport of its individual nanobelt.
abstract: 3R-TaSe2 nanobelt quasi-arrays were gown on a Ta foil by a facile two-step method, namely, firstly the TaSe3 nanobelt arrays were grown on a Ta foil by a surface-assisted chemical vapor transport, and then they were pyrolyzed to 3R-TaSe2 nanobelt quasi-arrays in vacuum. The nanobelts have low work function and the Ta foil has high conductivity, so the nanobelt arrays possess good electronic field emission performance with a low turn-on (3.6 V/microm) and threshold fields (4.3 V/microm) (which are defined as the macroscopic field required to produce a current density of 10 microA/cm2 and 1 mA/cm2, respectively) and a high enhancement factor (1045) at an emission distance of 200 microm. The electric transport of the individual nanobelt reveals that it is a high-conductive semiconductor, and observed by the variable-range hopping model. It suggests that the nanobelts have potential applications in field emission and field effect transistors.
authors.affiliation: Key Laboratory of Mesoscopic Chemistry of MOE, and School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093, China.
authors.forename: Xingcai
authors.initials: X
authors.lastname: Wu
authors.forename: Yourong
authors.initials: Y
authors.lastname: Tao
authors.forename: Liang
authors.initials: L
authors.lastname: Li
authors.forename: Tianyou
authors.initials: T
authors.lastname: Zhai
authors.forename: Yoshio
authors.initials: Y
authors.lastname: Bando
authors.forename: Dmitri
authors.initials: D
authors.lastname: Golberg