title: Electron eigenstates in quantum dots revealed by temperature derivative capacitance spectroscopy.
abstract: A novel method is presented for detecting confined energy states in quantum dots embedded in a junction space charge region, where the reverse bias is used to discharge the initially occupied energy levels. By determining the temperature derivative of junction capacitance as a function of bias voltage and temperature, spectra are obtained with peaks revealing the existence of electron states in InGaAs/GaAs quantum dots structure grown by molecular beam epitaxy. The method is compared with admittance based techniques and theory used earlier for interpretation of experimental data.
authors.affiliation: Department of Analysis of Semiconductor Nanostructures, Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw, Poland.
authors.forename: Wojciech
authors.initials: W
authors.lastname: Jung
authors.forename: Grzegorz
authors.initials: G
authors.lastname: Zaremba
authors.forename: Olof
authors.initials: O
authors.lastname: Engström
authors.forename: Maria
authors.initials: M
authors.lastname: Kaniewska