title: Effect of non-lattice oxygen on ZrO2-based resistive switching memory.
abstract: ZrO2-based resistive switching memory has attracted much attention according to its possible application in the next-generation nonvolatile memory. The Al/ZrO2/Pt resistive switching memory with bipolar resistive switching behavior is revealed in this work. The thickness of the ZrO2 film is only 20 nm. The device yield improved by the non-lattice oxygen existing in the ZrO2 film deposited at room temperature is firstly proposed. The stable resistive switching behavior and the long retention time with a large current ratio are also observed. Furthermore, it is demonstrated that the resistive switching mechanism agrees with the formation and rupture of a conductive filament in the ZrO2 film. In addition, the Al/ZrO2/Pt resistive switching memory is also possible for application in flexible electronic equipment because it can be fully fabricated at room temperature.
authors.affiliation: Department of Electrical Engineering, National Dong Hwa University, Hualien, 97401, Taiwan. chunchieh@mail.ndhu.edu.tw.
authors.forename: Chun-Chieh
authors.initials: CC
authors.lastname: Lin
authors.forename: Yi-Peng
authors.initials: YP
authors.lastname: Chang
authors.forename: Huei-Bo
authors.initials: HB
authors.lastname: Lin
authors.forename: Chu-Hsuan
authors.initials: CH
authors.lastname: Lin