title: Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM.
abstract: Evolution of growth/dissolution conductive filaments (CFs) in oxide-electrolyte-based resistive switching memories are studied by in situ transmission electron microscopy. Contrary to what is commonly believed, CFs are found to start growing from the anode (Ag or Cu) rather than having to reach the cathode (Pt) and grow backwards. A new mechanism based on local redox reactions inside the oxide-electrolyte is proposed.
authors.affiliation: Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
authors.forename: Qi
authors.initials: Q
authors.lastname: Liu
authors.forename: Jun
authors.initials: J
authors.lastname: Sun
authors.forename: Hangbing
authors.initials: H
authors.lastname: Lv
authors.forename: Shibing
authors.initials: S
authors.lastname: Long
authors.forename: Kuibo
authors.initials: K
authors.lastname: Yin
authors.forename: Neng
authors.initials: N
authors.lastname: Wan
authors.forename: Yingtao
authors.initials: Y
authors.lastname: Li
authors.forename: Litao
authors.initials: L
authors.lastname: Sun
authors.forename: Ming
authors.initials: M
authors.lastname: Liu
mesh_terms: D003300:Copper / Q000737:chemistry; D004566:Electrodes; D004573:Electrolytes / Q000737:chemistry*; D010087:Oxides / Q000737:chemistry*; D010984:Platinum / Q000737:chemistry; D012666:Semiconductors; D012834:Silver / Q000737:chemistry
chemical_list: D004573:Electrolytes; D010087:Oxides; D012834:Silver; D010984:Platinum; D003300:Copper