title: Room-temperature operation of npn- AlGaInAs/InP multiple quantum well transistor laser emitting at 1.3-µm wavelength.
abstract: Room-temperature pulsed operation of a 1.3-µm wavelength transistor laser (TL), consisting of a buried heterostructure (BH) with an npn configuration and an AlGaInAs/InP multiple-quantum-well (MQW) active region, was successfully attained. A threshold base current of 18 mA (threshold emitter current of 150 mA) was obtained with a stripe width of 1.3 µm and a cavity length of 500 µm. The transistor activity as well as the lasing operation were achieved at the same time, which is essential for the high-speed operation of TLs.
authors.affiliation: Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1-S3-12 O-okayama, Meguro-ku, Tokyo 135-8552, Japan.
authors.forename: Mizuki
authors.initials: M
authors.lastname: Shirao
authors.forename: Takashi
authors.initials: T
authors.lastname: Sato
authors.forename: Noriaki
authors.initials: N
authors.lastname: Sato
authors.forename: Nobuhiko
authors.initials: N
authors.lastname: Nishiyama
authors.forename: Shigehisa
authors.initials: S
authors.lastname: Arai