title: Nitrogen doped ZnO thin films prepared by photo-assisted metal-organic chemical vapor deposition.
abstract: Nitrogen-doped ZnO (ZnO:N) films were prepared by photo-assisted metal-organic chemical vapor deposition technique using NH3 as N doping source. The effects of in-situ light irradiation on the properties of ZnO:N films were studied by Hall measurements, X-ray diffraction, Raman scattering, and X-ray photoelectron spectroscopy. The results show that stable p-type ZnO:N films with a hole concentration of 3.61 x 10(17) cm(-3) was successfully achieved. Moreover, introducing proper in-situ light irradiation during the growth process can not only effectively improve the crystalline quality of ZnO films, but also enhance the activity of (N)o (N occupies O site) acceptors by removing the undesirable hydrogen atoms from ZnO:N films. Both effects are benefit for the p-type conductivity formation. Our results indicate that photo-assisted MOCVD maybe an effective technology to realize device-quality p-type ZnO:N films.
authors.affiliation: School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China.
authors.forename: Xiangping
authors.initials: X
authors.lastname: Li
authors.forename: Rensheng
authors.initials: R
authors.lastname: Shen
authors.forename: Baolin
authors.initials: B
authors.lastname: Zhang
authors.forename: Xin
authors.initials: X
authors.lastname: Dong
authors.forename: Baojiu
authors.initials: B
authors.lastname: Chen
authors.forename: Haiyang
authors.initials: H
authors.lastname: Zhong
authors.forename: Lihong
authors.initials: L
authors.lastname: Cheng
authors.forename: Jiashi
authors.initials: J
authors.lastname: Sun
authors.forename: Guotong
authors.initials: G
authors.lastname: Du