title: High performance bipolar resistive switching memory devices based on Zn2SnO4 nanowires.
abstract: The resistive switching behavior of metal-oxide-metal nanoscale devices is a fascinating phenomenon of next generation nonvolatile memories. Here, we demonstrate nanoscale memristive devices based on Zn(2)SnO(4) nanowires (ZTO NWs) for the first time. The devices show high performance bipolar resistive switching behaviors, including an ultrafast response speed of 20 ns, a low operation voltage of <2 V and long data retention (over 5 months). A physical model of metal filament formation along the ZTO NWs has been suggested to explain the bipolar resistive switching behavior.
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Haibo
authors.initials: H
authors.lastname: Dong
authors.forename: Xiaoxian
authors.initials: X
authors.lastname: Zhang
authors.forename: Duan
authors.initials: D
authors.lastname: Zhao
authors.forename: Zhiqiang
authors.initials: Z
authors.lastname: Niu
authors.forename: Qingsheng
authors.initials: Q
authors.lastname: Zeng
authors.forename: Jinzhu
authors.initials: J
authors.lastname: Li
authors.forename: Le
authors.initials: L
authors.lastname: Cai
authors.forename: Yanchun
authors.initials: Y
authors.lastname: Wang
authors.forename: Weiya
authors.initials: W
authors.lastname: Zhou
authors.forename: Min
authors.initials: M
authors.lastname: Gao
authors.forename: Sishen
authors.initials: S
authors.lastname: Xie