title: Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer.
abstract: 2.7 times increase in room temperature photoluminescence (PL) intensity and 3.2 times increase in electroluminescence (EL) intensity were observed in blue multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) as a result of introduction of nano-needle structure embedded with Ag nanoparticles (NPs) into n-GaN film underlying the active MQW region and thick p-GaN contact layer of LEDs. The nano-needle structure was produced by photoelectrochemical etching. Simultaneously a measurable decrease in room temperature decay time from 2.2 ns in control samples to 1.6 ns in PL was observed. The results are explained by strong coupling of recombination in GaN/InGaN MQWs with Ag NPs related localized surface plasmons.
authors.affiliation: School of Advanced Materials Engineering and Research Center of Advanced Materials Development and Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Korea.
authors.forename: Lee-Woon
authors.initials: LW
authors.lastname: Jang
authors.forename: Jin-Woo
authors.initials: JW
authors.lastname: Ju
authors.forename: Dae-Woo
authors.initials: DW
authors.lastname: Jeon
authors.forename: Jae-Woo
authors.initials: JW
authors.lastname: Park
authors.forename: A Y
authors.initials: AY
authors.lastname: Polyakov
authors.forename: Seung-Jae
authors.initials: SJ
authors.lastname: Lee
authors.forename: Jong-Hyeob
authors.initials: JH
authors.lastname: Baek
authors.forename: Song-Mei
authors.initials: SM
authors.lastname: Lee
authors.forename: Yong-Hoon
authors.initials: YH
authors.lastname: Cho
authors.forename: In-Hwan
authors.initials: IH
authors.lastname: Lee
mesh_terms: D004735:Energy Transfer; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D006046:Gold / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008029:Lighting / Q000295:instrumentation*; D043942:Nanotubes / Q000737:chemistry*; D012666:Semiconductors
chemical_list: D007204:Indium; C473348:gallium nitride; D006046:Gold; D005708:Gallium; C513701:indium nitride