title: A novel pH-dependent drift improvement method for zirconium dioxide gated pH-ion sensitive field effect transistors.
abstract: A novel compensation method for Zirconium dioxide gated Ion Sensitive Field Effect Transistors (ISFETs) to improve pH-dependent drift was demonstrated. Through the sequential measurements for both the n-channel and p-channel ISFETs, 75-100% pH-dependent drift could be successfully suppressed for the first seven hours. As a result, a nearly constant drift rate versus pH value was obtained, which increases the accuracy of pH measurements. Meanwhile, the drawback of the hyperbolic-like change with time of the common drift behavior for ISFETs was improved. A state-of-the-art integrated scheme adopting this method was also illustrated.
authors.affiliation: Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu 30050, Taiwan. kmchang@cc.nctu.edu.tw
authors.forename: Kow-Ming
authors.initials: KM
authors.lastname: Chang
authors.forename: Chih-Tien
authors.initials: CT
authors.lastname: Chang
authors.forename: Kuo-Yi
authors.initials: KY
authors.lastname: Chao
authors.forename: Chia-Hung
authors.initials: CH
authors.lastname: Lin