title: Light extraction efficiency improvement by multiple laser stealth dicing in InGaN-based blue light-emitting diodes.
abstract: We report a multiple laser stealth dicing (multi-LSD) method to improve the light extraction efficiency (LEE) of InGaN-based light-emitting diodes (LEDs) using a picosecond (Ps) laser. Compared with conventional LEDs scribed by a nanosecond (Ns) laser and single stealth-diced LEDs, the light output power (LOP) of the LEDs using multi-LSD method can be improved by 26.5% and 11.2%, respectively. The enhanced LOP is due to the increased side emission from the large-area roughened sidewalls of the sapphire substrates fabricated in the multi-LSD process. Numerical simulation results show that the multi-LSD process has little thermal damages to the multiple quantum wells (MQWs) of the LEDs.
authors.affiliation: Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
authors.forename: Yiyun
authors.initials: Y
authors.lastname: Zhang
authors.forename: Haizhong
authors.initials: H
authors.lastname: Xie
authors.forename: Haiyang
authors.initials: H
authors.lastname: Zheng
authors.forename: Tongbo
authors.initials: T
authors.lastname: Wei
authors.forename: Hua
authors.initials: H
authors.lastname: Yang
authors.forename: Jing
authors.initials: J
authors.lastname: Li
authors.forename: Xiaoyan
authors.initials: X
authors.lastname: Yi
authors.forename: Xiangyang
authors.initials: X
authors.lastname: Song
authors.forename: Guohong
authors.initials: G
authors.lastname: Wang
authors.forename: Jinmin
authors.initials: J
authors.lastname: Li
mesh_terms: D003116:Color; D017076:Computer-Aided Design; D004735:Energy Transfer; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007834:Lasers; D008029:Lighting / Q000295:instrumentation*; D012666:Semiconductors