title: Graphene layers from reduction of exfoliated graphite oxide.
abstract: Graphene oxide (GO) of approximately 1 nm was generated from exfoliated graphitic oxide using a modified Hummers method through ultrasonic treatment in water, and the GO film was reduced under protection of Ar/H2 flow at 800 degrees C. Moreover, the obtained graphene film has a high conductivity of 383 S/cm at 10-20 nm thickness.
authors.affiliation: Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China.
authors.forename: Hongpeng
authors.initials: H
authors.lastname: Wu
authors.forename: Dawei
authors.initials: D
authors.lastname: He
authors.forename: Yongsheng
authors.initials: Y
authors.lastname: Wang
authors.forename: Ming
authors.initials: M
authors.lastname: Fu
authors.forename: Zhiyong
authors.initials: Z
authors.lastname: Liu
authors.forename: Jigang
authors.initials: J
authors.lastname: Wang
authors.forename: Haiteng
authors.initials: H
authors.lastname: Wang