title: Large magnetoresistance in few layer graphene stacks with current perpendicular to plane geometry.
abstract: A large magnetoresistance (MR) effect of few-layers graphene between two non-magnetic metal electrodes with current perpendicular to graphene plane is studied. A non-saturation and anisotropic MR with the value over 60% at 14 T is observed in a two-layer graphene stack at room temperature. The resistance of the device is only tens of ohms, having the advantage of low power consumption for magnetic device applications.
authors.affiliation: State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing, P.R. China. liaozm@pku.edu.cn
authors.forename: Zhi-Min
authors.initials: ZM
authors.lastname: Liao
authors.forename: Han-Chun
authors.initials: HC
authors.lastname: Wu
authors.forename: Shishir
authors.initials: S
authors.lastname: Kumar
authors.forename: Georg S
authors.initials: GS
authors.lastname: Duesberg
authors.forename: Yang-Bo
authors.initials: YB
authors.lastname: Zhou
authors.forename: Graham L W
authors.initials: GL
authors.lastname: Cross
authors.forename: Igor V
authors.initials: IV
authors.lastname: Shvets
authors.forename: Da-Peng
authors.initials: DP
authors.lastname: Yu
mesh_terms: D004566:Electrodes; D006108:Graphite / Q000737:chemistry*; D008280:Magnetics; D012822:Silicon Dioxide / Q000737:chemistry; D013696:Temperature
chemical_list: D012822:Silicon Dioxide; D006108:Graphite