title: Crystallization kinetics of amorphous Ga-Sb films extended for phase-change memory.
abstract: Performance of phase-change materials based on Ga-Te-Sb was found getting better with decreasing Te content in our earlier studies. We concerned much properties of Te-free, Sb-rich binary Ga-Sb, which has been known to possess extremely fast crystallization behavior. Non-isothermal and isothermal crystallization kinetics of amorphous Sb-rich Ga-Sb films were explored by temperature dependent electrical resistance measurements. The crystallization temperature (183 to 261 degrees C) increases with decreasing Sb content (91 to 77 at%). The activation energy and rate-factor vary with Sb contents and reach the maximum at Ga19Sb81. The kinetic exponent is smaller than 1.5 at Sb < 85 at% denoting that the mechanism is one-dimensional crystal-growth from nuclei. The temperature corresponding to 10-year data-retention, evaluated from films, is 180 degrees C (Ga19Sb81) and 137 degrees C (Ga13Sb87), respectively. We verified memory performance using test-devices made of Ga16Sb84 working at voltages with 100 ns pulse-width.
authors.affiliation: Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan, ROC.
authors.forename: Chih-Chung
authors.initials: CC
authors.lastname: Chang
authors.forename: Kin-Fu
authors.initials: KF
authors.lastname: Kao
authors.forename: Ming-Jinn
authors.initials: MJ
authors.lastname: Tsai
authors.forename: Tri-Rung
authors.initials: TR
authors.lastname: Yew
authors.forename: Tsung-Shune
authors.initials: TS
authors.lastname: Chin