title: Exploring carrier transport phenomena  in a CVD-assembled graphene FET on  hexagonal boron nitride.
abstract: The supporting substrate plays a crucial role in preserving the superb electrical characteristicsof an atomically thin 2D carbon system. We explore carrier transport behavior in achemical-vapor-deposition- (CVD-) assembled graphene monolayer on hexagonal boron nitride (h-BN) substrate. Graphene-channel field-effect transistors (GFETs) were fabricated on ultra-thin h-BN multilayers to screen out carrier scattering from the underlying SiO2 substrate. To explore the transport phenomena, we use three different approaches to extract carrier mobility, namely, effective carrier mobility (μFE), intrinsic carrier mobility (μ), and field-effect mobility (μFE). A comparative study has been conducted based on the electrical characterization results, uncovering the impacts of supporting substrate material and device geometry scaling on carrier mobility in GFETs with CVD-assembled graphene as the active channel.
authors.affiliation: College of Nanoscale Science and Engineering, State University of New York, Albany, NY 12203, USA.
authors.forename: Edwin
authors.initials: E
authors.lastname: Kim
authors.forename: Nikhil
authors.initials: N
authors.lastname: Jai
authors.forename: Robin
authors.initials: R
authors.lastname: Jacobs-Gedri
authors.forename: Yang
authors.initials: Y
authors.lastname: Xu
authors.forename: Bin
authors.initials: B
authors.lastname: Yu