title: Room-temperature continuous-wave operation of lateral current injection wavelength-scale embedded active-region photonic-crystal laser.
abstract: We have developed a wavelength-scale embedded active-region photonic-crystal laser using lateral p-i-n structure. Zn diffusion and Si ion implantation are used for p- and n-type doping. Room-temperature continuous-wave lasing behavior is clearly observed from the injection current dependence of the output power, 3dB-bandwidth of the peak, and lasing wavelength. The threshold current is 390 μA and the estimated effective threshold current is 9.4 μA. The output power in output waveguide is 1.82 μW for a 2.0-mA current injection. These results indicate that the embedded active-region structure effectively reduce the thermal resistance. Ultrasmall electrically driven lasers are an important step towards on-chip photonic network applications.
authors.affiliation: NTT Photonics Laboratories, NTT Corp., 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan. matsuo.shinji@lab.ntt.co.jp
authors.forename: Shinji
authors.initials: S
authors.lastname: Matsuo
authors.forename: Koji
authors.initials: K
authors.lastname: Takeda
authors.forename: Tomonari
authors.initials: T
authors.lastname: Sato
authors.forename: Masaya
authors.initials: M
authors.lastname: Notomi
authors.forename: Akihiko
authors.initials: A
authors.lastname: Shinya
authors.forename: Kengo
authors.initials: K
authors.lastname: Nozaki
authors.forename: Hideaki
authors.initials: H
authors.lastname: Taniyama
authors.forename: Koichi
authors.initials: K
authors.lastname: Hasebe
authors.forename: Takaaki
authors.initials: T
authors.lastname: Kakitsuka