title: Laser-induced periodic structures for light extraction efficiency enhancement of GaN-based light emitting diodes.
abstract: The laser-induced periodic surface structure technique was used to form simultaneously dual-scale rough structures (DSRS) with spiral-shaped nanoscale structure inside semi-spherical microscale holes on p-GaN surface to improve the light-extraction efficiency of light-emitting diodes (LEDs). The light output power of DSRS-LEDs was 30% higher than that of conventional LEDs at an injection current of 20 mA. The enhancement in the light output power could be attributed to the increase in the probability of photons to escape from the increased surface area of textured p-GaN surface.
authors.affiliation: Institute of Electro-Optical Science and Engineering, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan City 70101, Taiwan.
authors.forename: Jiun-Ting
authors.initials: JT
authors.lastname: Chen
authors.forename: Wei-Chih
authors.initials: WC
authors.lastname: Lai
authors.forename: Yu-Jui
authors.initials: YJ
authors.lastname: Kao
authors.forename: Ya-Yu
authors.initials: YY
authors.lastname: Yang
authors.forename: Jinn-Kong
authors.initials: JK
authors.lastname: Sheu
mesh_terms: D004735:Energy Transfer; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007834:Lasers; D008029:Lighting / Q000295:instrumentation*; D012666:Semiconductors
chemical_list: C473348:gallium nitride; D005708:Gallium