title: Raman concentrators in Ge nanowires with dielectric coatings.
abstract: Raman spectroscopy is a powerful tool for investigating many fundamental properties of nanostructures, but extrinsic effects including background scattering and laser-induced heating can limit the analysis of intrinsic properties. A thin SiO2 dielectric coating is found to enhance the Raman signal from a single Ge nanowire by a factor of two as a result of wave interference. Consequently, the coated nanowire experiences less heating than a bare nanowire at equivalent signal intensities. The results demonstrate a simple and effective method to extend the limits of Raman analysis on single nanostructures and facilitate their characterization.
authors.affiliation: Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA.
authors.forename: Jerome K
authors.initials: JK
authors.lastname: Hyun
authors.forename: In Soo
authors.initials: IS
authors.lastname: Kim
authors.forename: Justin G
authors.initials: JG
authors.lastname: Connell
authors.forename: Lincoln J
authors.initials: LJ
authors.lastname: Lauhon
mesh_terms: D000327:Adsorption; D017097:Electric Impedance; D005857:Germanium / Q000737:chemistry*; D008027:Light; D008422:Materials Testing; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D012542:Scattering, Radiation; D012822:Silicon Dioxide / Q000737:chemistry*; D013059:Spectrum Analysis, Raman / Q000379:methods*
chemical_list: D005857:Germanium; D012822:Silicon Dioxide