title: Precision depth measurement of through silicon vias (TSVs) on 3D semiconductor packaging process.
abstract: We have proposed and demonstrated a novel method to measure depths of through silicon vias (TSVs) at high speed. TSVs are fine and deep holes fabricated in silicon wafers for 3D semiconductors; they are used for electrical connections between vertically stacked wafers. Because the high-aspect ratio hole of the TSV makes it difficult for light to reach the bottom surface, conventional optical methods using visible lights cannot determine the depth value. By adopting an optical comb of a femtosecond pulse laser in the infra-red range as a light source, the depths of TSVs having aspect ratio of about 7 were measured. This measurement was done at high speed based on spectral resolved interferometry. The proposed method is expected to be an alternative method for depth inspection of TSVs.
authors.affiliation: Center for Length, Korea Research Institute of Standards and Science, Daejeon, South Korea. jonghan@kriss.re.kr
authors.forename: Jonghan
authors.initials: J
authors.lastname: Jin
authors.forename: Jae Wan
authors.initials: JW
authors.lastname: Kim
authors.forename: Chu-Shik
authors.initials: CS
authors.lastname: Kang
authors.forename: Jong-Ahn
authors.initials: JA
authors.lastname: Kim
authors.forename: Sunghun
authors.initials: S
authors.lastname: Lee
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis / Q000295:instrumentation / Q000379:methods; D007368:Interferometry / Q000295:instrumentation*; D007834:Lasers; D019064:Product Packaging / Q000295:instrumentation*; D012031:Refractometry / Q000295:instrumentation*; D012666:Semiconductors