title: High power density vertical-cavity surface-emitting lasers with ion implanted isolated current aperture.
abstract: We report on GaAs-based high power density vertical-cavity surface-emitting laser diodes (VCSELs) with ion implanted isolated current apertures. A continuous-wave output power of over 380 mW and the power density of 4.9 kW/cm2have been achieved at 15 °C from the 100-μm-diameter aperture, which is the highest output characteristic ever reported for an ion implanted VCSEL. A high background suppression ratio of over 40 dB has also been obtained at the emission wavelength of 970 nm. The ion implantation technique provides an excellent current isolation in the apertures and would be a key to realize high power output from a VCSEL array.
authors.affiliation: Hamamatsu Photonics K.K., 5000 Hirakuchi, Hamakita, Hamamatsu-City 434-8601, Japan. higuchi@crl.hpk.co.jp
authors.forename: Akira
authors.initials: A
authors.lastname: Higuchi
authors.forename: Hideyuki
authors.initials: H
authors.lastname: Naito
authors.forename: Kousuke
authors.initials: K
authors.lastname: Torii
authors.forename: Masahiro
authors.initials: M
authors.lastname: Miyamoto
authors.forename: Takenori
authors.initials: T
authors.lastname: Morita
authors.forename: Junya
authors.initials: J
authors.lastname: Maeda
authors.forename: Hirofumi
authors.initials: H
authors.lastname: Miyajima
authors.forename: Harumasa
authors.initials: H
authors.lastname: Yoshida