title: Dependence of electrical properties on thermal temperature in nanocrystalline SnO2 thin films.
abstract: Nanocrystalline SnO2 thin films were prepared by pulsed laser deposition techniques on clean glass substrates, and the films were then annealed for 30 min from 50 to 550 degrees C with a step of 50 degrees C, respectively. The investigation of X-ray diffraction confirmed that the various SnO2 thin films were consisted of nanoparticles with average grain size in the range of 23.7-28.9 nm. Root-mean-square surface roughness of the as-prepared SnO2 thin film was measured to be 25.6 nm which decreases to 16.2 nm with thermal annealing. Electrical resistivity and refractive index were measured as a function of annealing temperature, and found to lie between 1.24 to 1.45 momega-cm, and 1.502 to 1.349, respectively. The results indicate that nearly opposite actions to root-mean-square surface roughness and electrical resistivity make a unique performance with thermal annealing temperature. The post annealing shows greater tendency to affect the structural and electrical properties of SnO2 thin films which composed of nanoparticles.
authors.affiliation: School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444, People's Republic of China.
authors.forename: Juan
authors.initials: J
authors.lastname: Du
authors.forename: HaiJiao
authors.initials: H
authors.lastname: Zhang
authors.forename: Zheng
authors.initials: Z
authors.lastname: Jiao
authors.forename: Minghong
authors.initials: M
authors.lastname: Wu
authors.forename: Chan-Hung
authors.initials: CH
authors.lastname: Shek
authors.forename: C M Lawrence
authors.initials: CM
authors.lastname: Wu
authors.forename: Joseph K L
authors.initials: JK
authors.lastname: Lai
authors.forename: Zhiwen
authors.initials: Z
authors.lastname: Chen