title: Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors.
abstract: As of yet, III-V p-type field-effect transistors (p-FETs) on Si have not been reported, due partly to materials and processing challenges, presenting an important bottleneck in the development of complementary III-V electronics. Here, we report the first high-mobility III-V p-FET on Si, enabled by the epitaxial layer transfer of InGaSb heterostructures with nanoscale thicknesses. Importantly, the use of ultrathin (thickness, ~2.5 nm) InAs cladding layers results in drastic performance enhancements arising from (i) surface passivation of the InGaSb channel, (ii) mobility enhancement due to the confinement of holes in InGaSb, and (iii) low-resistance, dopant-free contacts due to the type III band alignment of the heterojunction. The fabricated p-FETs display a peak effective mobility of ~820 cm(2)/(V s) for holes with a subthreshold swing of ~130 mV/decade. The results present an important advance in the field of III-V electronics.
authors.affiliation: Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA.
authors.forename: Kuniharu
authors.initials: K
authors.lastname: Takei
authors.forename: Morten
authors.initials: M
authors.lastname: Madsen
authors.forename: Hui
authors.initials: H
authors.lastname: Fang
authors.forename: Rehan
authors.initials: R
authors.lastname: Kapadia
authors.forename: Steven
authors.initials: S
authors.lastname: Chuang
authors.forename: Ha Sul
authors.initials: HS
authors.lastname: Kim
authors.forename: Chin-Hung
authors.initials: CH
authors.lastname: Liu
authors.forename: E
authors.initials: E
authors.lastname: Plis
authors.forename: Junghyo
authors.initials: J
authors.lastname: Nah
authors.forename: Sanjay
authors.initials: S
authors.lastname: Krishna
authors.forename: Yu-Lun
authors.initials: YL
authors.lastname: Chueh
authors.forename: Jing
authors.initials: J
authors.lastname: Guo
authors.forename: Ali
authors.initials: A
authors.lastname: Javey
mesh_terms: D000965:Antimony / Q000737:chemistry*; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008567:Membranes, Artificial; D049329:Nanostructures / Q000737:chemistry*; D010316:Particle Size; D016062:Porosity; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties; D014173:Transistors, Electronic
chemical_list: D008567:Membranes, Artificial; D007204:Indium; D000965:Antimony; D005708:Gallium; D012825:Silicon