title: Photocurrent generation in Ge nanocrystal/Si systems.
abstract: We report on the generation of photocurrent in the visible and ultraviolet range from planar devices built from the Ge nanocrystals grown on a heavy n-doped Si(001) substrate covered with 5 nm thick thermally grown SiO2. These Ge nanostructures/SiO2/n(+)-Si devices are shown to generate photocurrent with an Incident-Photon-to-electron Conversion Efficiency (IPCE) spectral range depending on the Ge nanocrystals size. The increase of the IPCE value of our devices in the 350-600 nm range correlates well with the absorbance of Ge.
authors.affiliation: Dipartimento di Fisica, Unita' CNISM, Università di Roma Tor Vergata, 00133 Roma, Italy.
authors.forename: Paola
authors.initials: P
authors.lastname: Castrucci
authors.forename: Silvano
authors.initials: S
authors.lastname: Del Gobbo
authors.forename: Eugen
authors.initials: E
authors.lastname: Speiser
authors.forename: Manuela
authors.initials: M
authors.lastname: Scarselli
authors.forename: Maurizio
authors.initials: M
authors.lastname: De Crescenzi
authors.forename: Guillaume
authors.initials: G
authors.lastname: Amiard
authors.forename: Antoine
authors.initials: A
authors.lastname: Ronda
authors.forename: Isabelle
authors.initials: I
authors.lastname: Berbezier