title: MgZnO nanowires based deep ultraviolet heterojunction light emitting diodes.
abstract: Vertically aligned Mg alloyed ZnO nanowires were successfully grown by Chemical Vapor deposition method in a tube furnace. Structural analysis found that the MgZnO nanowires are with single crystalline without phase separations. The atomic ratio of Mg/O in the nanowire was determined to be approximately 15%. Photoluminescence spectra show that the band gap of ZnO nanowire was tuned to approximately 3.6 eV due to Mg incorporation. N-type MgZnO nanowires/p-type GaN was used for heterojunctional light emitting diode fabrication. Electroluminescence measurement yielded ultraviolet emission peaks, which includes a deep ultraviolet at approximately 340 nm. The results suggest that successful Mg alloying in ZnO nanowires was achieved and is promising for deep ultraviolet devices.
authors.affiliation: School of Metallurgy Science and Engineering, Central South University, Changsha, 410083, China.
authors.forename: Sheng
authors.initials: S
authors.lastname: Chu
authors.forename: Shijia
authors.initials: S
authors.lastname: Zhao
authors.forename: Zhiqun
authors.initials: Z
authors.lastname: Xiong
authors.forename: Guang
authors.initials: G
authors.lastname: Chu