title: Ultrawide-bandwidth, superluminescent light-emitting diodes using InAs quantum dots of tuned height.
abstract: An ultrawide-bandwidth, superluminescent light-emitting diode (SLED) utilizing multiple layers of dots of tuned height is reported. Due to thermal effect, the superluminescent phenomenon is observed only under pulse-mode operation. The device exhibits a 3 dB bandwidth of 190 nm with central wavelength of 1020 nm under continuous-wave (cw) conditions. The maximum corresponding output power achieved in this device under cw and pulsed operation conditions are 0.54 mW and 17 mW, respectively.
authors.affiliation: Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada. sofiane.haffouz@nrc.ca
authors.forename: S
authors.initials: S
authors.lastname: Haffouz
authors.forename: P J
authors.initials: PJ
authors.lastname: Barrios
authors.forename: R
authors.initials: R
authors.lastname: Normandin
authors.forename: D
authors.initials: D
authors.lastname: Poitras
authors.forename: Z
authors.initials: Z
authors.lastname: Lu
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008027:Light; D008163:Luminescent Measurements / Q000295:instrumentation*; D045663:Quantum Dots
chemical_list: D001152:Arsenicals; D007204:Indium; C076773:indium arsenide