title: Enhanced responsivity of photodetectors realized via impact ionization.
abstract: To increase the responsivity is one of the vital issues for a photodetector. By employing ZnO as a representative material of ultraviolet photodetectors and Si as a representative material of visible photodetectors, an impact ionization process, in which additional carriers can be generated in an insulating layer at a relatively large electric field, has been employed to increase the responsivity of a semiconductor photodetector. It is found that the responsivity of the photodetectors can be enhanced by tens of times via this impact ionization process. The results reported in this paper provide a general route to enhance the responsivity of a photodetector, thus may represent a step towards high-performance photodetectors.
authors.affiliation: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China. yuji4268@163.com
authors.forename: Ji
authors.initials: J
authors.lastname: Yu
authors.forename: Chong-Xin
authors.initials: CX
authors.lastname: Shan
authors.forename: Qian
authors.initials: Q
authors.lastname: Qiao
authors.forename: Xiu-Hua
authors.initials: XH
authors.lastname: Xie
authors.forename: Shuang-Peng
authors.initials: SP
authors.lastname: Wang
authors.forename: Zhen-Zhong
authors.initials: ZZ
authors.lastname: Zhang
authors.forename: De-Zhen
authors.initials: DZ
authors.lastname: Shen
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D020450:Heavy Ions; D008027:Light; D010783:Photometry / Q000295:instrumentation*; D012666:Semiconductors; D012680:Sensitivity and Specificity; D014159:Transducers; D015034:Zinc Oxide / Q000737:chemistry* / Q000528:radiation effects
chemical_list: D015034:Zinc Oxide