title: A highly sensitive CMOS digital Hall sensor for low magnetic field applications.
abstract: Integrated CMOS Hall sensors have been widely used to measure magnetic fields. However, they are difficult to work with in a low magnetic field environment due to their low sensitivity and large offset. This paper describes a highly sensitive digital Hall sensor fabricated in 0.18 μm high voltage CMOS technology for low field applications. The sensor consists of a switched cross-shaped Hall plate and a novel signal conditioner. It effectively eliminates offset and low frequency 1/f noise by applying a dynamic quadrature offset cancellation technique. The measured results show the optimal Hall plate achieves a high current related sensitivity of about 310 V/AT. The whole sensor has a remarkable ability to measure a minimum ± 2 mT magnetic field and output a digital Hall signal in a wide temperature range from -40 °C to 120 °C.
authors.affiliation: School of Electronic Science & Engineering, Nanjing University, Nanjing 210093, China. yuex@njupt.edu.cn
authors.forename: Yue
authors.initials: Y
authors.lastname: Xu
authors.forename: Hong-Bin
authors.initials: HB
authors.lastname: Pan
authors.forename: Shu-Zhuan
authors.initials: SZ
authors.lastname: He
authors.forename: Li
authors.initials: L
authors.lastname: Li
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D060526:Magnetic Fields; D060306:Magnetometry / Q000295:instrumentation*; D012666:Semiconductors; D014159:Transducers