title: Position-controlled III-V compound semiconductor nanowire solar cells by selective-area metal-organic vapor phase epitaxy.
abstract: We demonstrate position-controlled III-V semiconductor nanowires (NWs) by using selective-area metal-organic vapor phase epitaxy and their application to solar cells. Efficiency of 4.23% is achieved for InP core-shell NW solar cells. We form a 'flexible NW array' without a substrate, which has the advantage of saving natural resources over conventional thin film photovoltaic devices. Four junction NW solar cells with over 50% efficiency are proposed and discussed.
authors.affiliation: Graduate School of Information Science and Technology, Hokkaido University, N14, W9, Sapporo, 060-0814, Japan. fukui@rciqe.hokudai.ac.jp
authors.forename: Takashi
authors.initials: T
authors.lastname: Fukui
authors.forename: Masatoshi
authors.initials: M
authors.lastname: Yoshimura
authors.forename: Eiji
authors.initials: E
authors.lastname: Nakai
authors.forename: Katsuhiro
authors.initials: K
authors.lastname: Tomioka
mesh_terms: D008670:Metals / Q000737:chemistry*; D053770:Nanowires; D010777:Photochemistry; D012666:Semiconductors; D012993:Solar Energy; D055549:Volatile Organic Compounds / Q000737:chemistry*
chemical_list: D008670:Metals; D055549:Volatile Organic Compounds