title: Design rule of nanostructures in light-emitting diodes for complete elimination of total internal reflection.
abstract: Cone-shaped nanostructures with controllable side-wall angle are success- fully fabricated with a SiO(2)  nanosphere lithography (NSL) etching mask. Vertical LEDs with cone-shaped nanostructures with a 24.1° side-wall angle provide 6% more light output power compared to those using hexagonal pyramids formed by photochemical etching. This achievement is attributed to effective elimination of total internal reflection by angle-controlled nanostructures.
authors.affiliation: Department of Materials Science and Engineering, Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), Pohang, Korea.
authors.forename: Jun Ho
authors.initials: JH
authors.lastname: Son
authors.forename: Jong Uk
authors.initials: JU
authors.lastname: Kim
authors.forename: Yang Hee
authors.initials: YH
authors.lastname: Song
authors.forename: Buem Joon
authors.initials: BJ
authors.lastname: Kim
authors.forename: Chul Jong
authors.initials: CJ
authors.lastname: Ryu
authors.forename: Jong-Lam
authors.initials: JL
authors.lastname: Lee
mesh_terms: D008027:Light; D049329:Nanostructures / Q000737:chemistry*; D012666:Semiconductors; D012822:Silicon Dioxide / Q000737:chemistry
chemical_list: D012822:Silicon Dioxide