title: Controlling bulk conductivity in topological insulators: key role of anti-site defects.
abstract: Intrinsic topological insulators are realized by alloying Bi(2)Te(3) with Bi(2)Se(3). Angle-resolved photoemission and bulk transport measurements reveal that the Fermi level is readily tuned into the bulk bandgap. First-principles calculations of the native defect landscape highlight the key role of anti-site defects for achieving this, and predict optimal growth conditions to realize maximally resistive topological insulators.
authors.affiliation: University College London, Kathleen Lonsdale Materials Chemistry, Department of Chemistry, London, UK. d.scanlon@ucl.ac.uk
authors.forename: D O
authors.initials: DO
authors.lastname: Scanlon
authors.forename: P D C
authors.initials: PD
authors.lastname: King
authors.forename: R P
authors.initials: RP
authors.lastname: Singh
authors.forename: A
authors.initials: A
authors.lastname: de la Torre
authors.forename: S McKeown
authors.initials: SM
authors.lastname: Walker
authors.forename: G
authors.initials: G
authors.lastname: Balakrishnan
authors.forename: F
authors.initials: F
authors.lastname: Baumberger
authors.forename: C R A
authors.initials: CR
authors.lastname: Catlow
mesh_terms: D000497:Alloys / Q000737:chemistry*; D001729:Bismuth / Q000737:chemistry*; D017097:Electric Impedance; D012643:Selenium / Q000737:chemistry*; D013691:Tellurium / Q000737:chemistry*
chemical_list: D000497:Alloys; D012643:Selenium; D013691:Tellurium; D001729:Bismuth