title: Si/Ge uni-traveling carrier photodetector.
abstract: We have fabricated and characterized a germanium on silicon uni-traveling carrier photodetector for analog and coherent communications applications. The device has a bandwidth of 20GHz, a large-signal 1dB saturation photocurrent of 20mA at -3V, and a low thermal impedance of 520K/W.
authors.affiliation: Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA. molly@ece.ucsb.edu
authors.forename: Molly
authors.initials: M
authors.lastname: Piels
authors.forename: John E
authors.initials: JE
authors.lastname: Bowers
mesh_terms: D004579:Electron Transport / Q000187:drug effects; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005857:Germanium / Q000737:chemistry* / Q000528:radiation effects; D008027:Light; D010783:Photometry / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry* / Q000528:radiation effects
chemical_list: D005857:Germanium; D012825:Silicon