title: Silicon-Germanium multi-quantum well photodetectors in the near infrared.
abstract: Single crystal Silicon-Germanium multi-quantum well layers were epitaxially grown on silicon substrates. Very high quality films were achieved with high level of control utilizing recently developed MHAH epitaxial technique. MHAH growth technique facilitates the monolithic integration of photonic functionality such as modulators and photodetectors with low-cost silicon VLSI technology. Mesa structured p-i-n photodetectors were fabricated with low reverse leakage currents of ~10 mA/cm² and responsivity values exceeding 0.1 A/W. Moreover, the spectral responsivity of fabricated detectors can be tuned by applied voltage.
authors.affiliation: Department of Electrical and Electronics Engineering, Bilkent University, Ankara 06800, Turkey. e_onaran@ug.bilkent.edu.tr
authors.forename: Efe
authors.initials: E
authors.lastname: Onaran
authors.forename: M Cengiz
authors.initials: MC
authors.lastname: Onbasli
authors.forename: Alper
authors.initials: A
authors.lastname: Yesilyurt
authors.forename: Hyun Yong
authors.initials: HY
authors.lastname: Yu
authors.forename: Ammar M
authors.initials: AM
authors.lastname: Nayfeh
authors.forename: Ali K
authors.initials: AK
authors.lastname: Okyay
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D005857:Germanium / Q000737:chemistry* / Q000528:radiation effects; D007259:Infrared Rays; D010783:Photometry / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry* / Q000528:radiation effects; D019265:Spectroscopy, Near-Infrared / Q000295:instrumentation*
chemical_list: D005857:Germanium; D012825:Silicon