title: Theory of piezo-phototronics for light-emitting diodes.
abstract: Devices fabricated by using the inner-crystal piezopotential as a "gate" voltage to tune/control the carrier generation, transport, and recombination processes at the vicinity of a p-n junction are named piezo-phototronics. Here, the theory of the photon emission and carrier transport behavior in piezo-phototronic devices is investigated as a p-n junction light-emitting diode. Numerical calculations are given for predicting the photon emission and current-voltage characteristics of a general piezo-phototronic light-emitting diode.
authors.affiliation: School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, 30332-0245, USA.
authors.forename: Yan
authors.initials: Y
authors.lastname: Zhang
authors.forename: Zhong Lin
authors.initials: ZL
authors.lastname: Wang
mesh_terms: D004553:Electric Conductivity; D008027:Light; D008962:Models, Theoretical; D053770:Nanowires / Q000737:chemistry; D055096:Optical Devices; D012666:Semiconductors; D015034:Zinc Oxide / Q000737:chemistry
chemical_list: D015034:Zinc Oxide