title: Free carrier induced spectral shift for GaAs filled metallic hole arrays.
abstract: For a GaAs filled metallic hole array on a pre-epi GaAs substrate, the free carriers, generated by three-photon absorption (3PA) assisted by strongly enhanced local fields, reduce the refractive index of GaAs in ~200-nm thick active area through band filling and free carrier absorption. Therefore, the surface plasma wave (SPW) resonance, and the related second harmonic (SH) spectrum blue shifts with increasing fluence; For the plasmonic structure on a substrate with surface defects, free carrier recombination dominates. The band gap emission spectral peak wavelength decreases 10-nm with increasing fluence, showing the transition from nonradiative-, at low excitation, to bimolecular-recombination at high carrier concentrations.
authors.affiliation: Center for High Technology Materials and Department of Electrical and Computer Engineering, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106, USA. Jingyuzhang3@gmail.com
authors.forename: Jingyu
authors.initials: J
authors.lastname: Zhang
authors.forename: Bin
authors.initials: B
authors.lastname: Xiang
authors.forename: Mansoor
authors.initials: M
authors.lastname: Sheik-Bahae
authors.forename: S R J
authors.initials: SR
authors.lastname: Brueck
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D008670:Metals / Q000737:chemistry; D016062:Porosity; D012666:Semiconductors; D020349:Surface Plasmon Resonance / Q000295:instrumentation*
chemical_list: D001152:Arsenicals; D008670:Metals; C043055:gallium arsenide; D005708:Gallium