title: Repeated growth and bubbling transfer of graphene with millimetre-size single-crystal grains using platinum.
abstract: Large single-crystal graphene is highly desired and important for the applications of graphene in electronics, as grain boundaries between graphene grains markedly degrade its quality and properties. Here we report the growth of millimetre-sized hexagonal single-crystal graphene and graphene films joined from such grains on Pt by ambient-pressure chemical vapour deposition. We report a bubbling method to transfer these single graphene grains and graphene films to arbitrary substrate, which is nondestructive not only to graphene, but also to the Pt substrates. The Pt substrates can be repeatedly used for graphene growth. The graphene shows high crystal quality with the reported lowest wrinkle height of 0.8 nm and a carrier mobility of greater than 7,100 cm(2) V(-1) s(-1) under ambient conditions. The repeatable growth of graphene with large single-crystal grains on Pt and its nondestructive transfer may enable various applications.
authors.affiliation: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, China.
authors.forename: Libo
authors.initials: L
authors.lastname: Gao
authors.forename: Wencai
authors.initials: W
authors.lastname: Ren
authors.forename: Huilong
authors.initials: H
authors.lastname: Xu
authors.forename: Li
authors.initials: L
authors.lastname: Jin
authors.forename: Zhenxing
authors.initials: Z
authors.lastname: Wang
authors.forename: Teng
authors.initials: T
authors.lastname: Ma
authors.forename: Lai-Peng
authors.initials: LP
authors.lastname: Ma
authors.forename: Zhiyong
authors.initials: Z
authors.lastname: Zhang
authors.forename: Qiang
authors.initials: Q
authors.lastname: Fu
authors.forename: Lian-Mao
authors.initials: LM
authors.lastname: Peng
authors.forename: Xinhe
authors.initials: X
authors.lastname: Bao
authors.forename: Hui-Ming
authors.initials: HM
authors.lastname: Cheng