title: Indium-rich InGaN epitaxial layers grown pseudomorphically on a nano-sculpted InGaN template.
abstract: Indium-rich InGaN epitaxial layers with a p-i-n structure were grown pseudomorphically on a strain-relaxed InGaN template to reduce structural strain induced by lattice mismatch. We applied a nano-sculpting process to improve the crystal quality of the strain-relaxed InGaN template. The results show that the nano-sculpting process can suppress effectively the threading dislocation generation and improves significantly the I-V characteristic of the InGaN p-i-n structure. This InGaN template technique with nano-sculpting process shows great potential for future applications in indium-rich InGaN optic-electron devices.
authors.affiliation: Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing National Laboratory of Microstructure, School of Electronics Science and Engineering, Nanjing University, Nanjing 210093, China.
authors.forename: J J
authors.initials: JJ
authors.lastname: Xue
authors.forename: D J
authors.initials: DJ
authors.lastname: Chen
authors.forename: B
authors.initials: B
authors.lastname: Liu
authors.forename: H
authors.initials: H
authors.lastname: Lu
authors.forename: R
authors.initials: R
authors.lastname: Zhang
authors.forename: Y D
authors.initials: YD
authors.lastname: Zheng
authors.forename: B
authors.initials: B
authors.lastname: Cui
authors.forename: Andrew M
authors.initials: AM
authors.lastname: Wowchak
authors.forename: Amir M
authors.initials: AM
authors.lastname: Dabiran
authors.forename: K
authors.initials: K
authors.lastname: Xu
authors.forename: J P
authors.initials: JP
authors.lastname: Zhang
mesh_terms: D003460:Crystallization / Q000379:methods*; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008422:Materials Testing; D054802:Molecular Imprinting / Q000379:methods*; D036103:Nanotechnology / Q000379:methods*; D012666:Semiconductors
chemical_list: D007204:Indium; C473348:gallium nitride; D005708:Gallium; C513701:indium nitride