title: n-ZnO/LaAlO3/p-Si heterojunction for visible-blind UV detection.
abstract: A visible-blind UV photodetector (PD) using a double heterojunction of n-ZnO/LaAlO3 (LAO)/p-Si was demonstrated. Inserted LAO layers exhibit electrical insulating properties and serve as blocking layers for photoexcited electrons from p-Si to n-ZnO, leading to an enhanced rectification ratio and a visible-blind UV detectivity of the n-ZnO/LAO/p-Si PDs due to the high potential barrier between LAO and p-Si layers (~2.0 eV). These results support the use of n-ZnO/LAO/p-Si PDs in the visible-blind UV PDs in a visible-light environment.
authors.affiliation: Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan.
authors.forename: D S
authors.initials: DS
authors.lastname: Tasi
authors.forename: C F
authors.initials: CF
authors.lastname: Kang
authors.forename: H H
authors.initials: HH
authors.lastname: Wang
authors.forename: C A
authors.initials: CA
authors.lastname: Lin
authors.forename: J J
authors.initials: JJ
authors.lastname: Ke
authors.forename: Y H
authors.initials: YH
authors.lastname: Chu
authors.forename: J H
authors.initials: JH
authors.lastname: He