title: Nonvolatile resistive memory of ferrocene covalently bonded to reduced graphene oxide.
abstract: Recently, the number of studies concerning organic memory devices has grown rapidly due to increase in the demand for electronic devices. Among the organic memory devices, the development of organic nonvolatile memory materials and devices is becoming an important research topic due to their low power consumption.
authors.affiliation: National Creative Research Initiative, Center for Smart Molecular Memory, Department of Chemistry, Samsung-SKKU Graphene Center, Sungkyunkwan University, Suwon, Gyeonggi-Do 440-746, Korea.
authors.forename: Changhua
authors.initials: C
authors.lastname: Jin
authors.forename: Junghyun
authors.initials: J
authors.lastname: Lee
authors.forename: Eunkyo
authors.initials: E
authors.lastname: Lee
authors.forename: Eunhee
authors.initials: E
authors.lastname: Hwang
authors.forename: Hyoyoung
authors.initials: H
authors.lastname: Lee