title: Enhanced carrier transport along edges of graphene devices.
abstract: The relation between macroscopic charge transport properties and microscopic carrier distribution is one of the central issues in the physics and future applications of graphene devices (GDs). We find strong conductance enhancement at the edges of GDs using scanning gate microscopy. This result is explained by our theoretical model of the opening of an additional conduction channel localized at the edges by depleting accumulated charge by the tip.
authors.affiliation: Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea.
authors.forename: Jungseok
authors.initials: J
authors.lastname: Chae
authors.forename: Suyong
authors.initials: S
authors.lastname: Jung
authors.forename: Sungjong
authors.initials: S
authors.lastname: Woo
authors.forename: Hongwoo
authors.initials: H
authors.lastname: Baek
authors.forename: Jeonghoon
authors.initials: J
authors.lastname: Ha
authors.forename: Young Jae
authors.initials: YJ
authors.lastname: Song
authors.forename: Young-Woo
authors.initials: YW
authors.lastname: Son
authors.forename: Nikolai B
authors.initials: NB
authors.lastname: Zhitenev
authors.forename: Joseph A
authors.initials: JA
authors.lastname: Stroscio
authors.forename: Young
authors.initials: Y
authors.lastname: Kuk