title: Large array of single, site-controlled InAs quantum dots fabricated by UV-nanoimprint lithography and molecular beam epitaxy.
abstract: We present the growth of single, site-controlled InAs quantum dots on GaAs templates using UV-nanoimprint lithography and molecular beam epitaxy. A large quantum dot array with a period of 1.5 µm was achieved. Single quantum dots were studied by steady-state and time-resolved micro-photoluminescence experiments. We obtained single exciton emission with a linewidth of 45 µeV. In time-resolved experiments, we observed decay times of about 670 ps. Our results underline the potential of nanoimprint lithography and molecular beam epitaxy to create large-scale, single quantum dot arrays.
authors.affiliation: Optoelectronics Research Centre, Tampere University of Technology, FIN-33101 Tampere, Finland. andreas.schramm@tut.fi
authors.forename: A
authors.initials: A
authors.lastname: Schramm
authors.forename: J
authors.initials: J
authors.lastname: Tommila
authors.forename: C
authors.initials: C
authors.lastname: Strelow
authors.forename: T V
authors.initials: TV
authors.lastname: Hakkarainen
authors.forename: A
authors.initials: A
authors.lastname: Tukiainen
authors.forename: M
authors.initials: M
authors.lastname: Dumitrescu
authors.forename: A
authors.initials: A
authors.lastname: Mews
authors.forename: T
authors.initials: T
authors.lastname: Kipp
authors.forename: M
authors.initials: M
authors.lastname: Guina