title: Probing single-charge fluctuations at a GaAs/AlAs interface using laser spectroscopy on a nearby InGaAs quantum dot.
abstract: We probe local charge fluctuations in a semiconductor via laser spectroscopy on a nearby self-assembled quantum dot. We demonstrate that the quantum dot is sensitive to changes in the local environment at the single-charge level. By controlling the charge state of localized defects, we are able to infer the distance of the defects from the quantum dot with ±5  nm resolution. The results identify and quantify the main source of charge noise in the commonly used optical field-effect devices.
authors.affiliation: Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland.
authors.forename: J
authors.initials: J
authors.lastname: Houel
authors.forename: A V
authors.initials: AV
authors.lastname: Kuhlmann
authors.forename: L
authors.initials: L
authors.lastname: Greuter
authors.forename: F
authors.initials: F
authors.lastname: Xue
authors.forename: M
authors.initials: M
authors.lastname: Poggio
authors.forename: B D
authors.initials: BD
authors.lastname: Gerardot
authors.forename: P A
authors.initials: PA
authors.lastname: Dalgarno
authors.forename: A
authors.initials: A
authors.lastname: Badolato
authors.forename: P M
authors.initials: PM
authors.lastname: Petroff
authors.forename: A
authors.initials: A
authors.lastname: Ludwig
authors.forename: D
authors.initials: D
authors.lastname: Reuter
authors.forename: A D
authors.initials: AD
authors.lastname: Wieck
authors.forename: R J
authors.initials: RJ
authors.lastname: Warburton