title: Gate effects on DNA translocation through silicon dioxide nanopore.
abstract: The effects of gate voltage on the translocation of DNA molecules through a nanopore are studied. A twenty-fold increase in the translocation time is observed with a positive gate voltage applied, without changing too much of the ionic current. The amplitude of the current blockage by the DNA molecules was reduced by roughly the same factor. At the same time, the number of the blocking events decreases significantly. The applied gate voltage also modulates the scatter plot of the amplitude of the current blockage against the dwell time. The observations are consistent with the recent theoretical results.
authors.affiliation: Department of Physics, National Tsing-Hua University, Hsinchu, Taiwan.
authors.forename: Pei-chun
authors.initials: PC
authors.lastname: Yen
authors.forename: Chung-hsuan
authors.initials: CH
authors.lastname: Wang
authors.forename: Gwo-Jen
authors.initials: GJ
authors.lastname: Hwang
authors.forename: Y C
authors.initials: YC
authors.lastname: Chou
mesh_terms: D004247:DNA / Q000378:metabolism*; D004553:Electric Conductivity; D009038:Motion; D058608:Nanopores; D012822:Silicon Dioxide / Q000737:chemistry*; D013997:Time Factors
chemical_list: D012822:Silicon Dioxide; D004247:DNA