title: Domain wall motion in synthetic Co2Si nanowires.
abstract: We report the synthesis of single crystalline Co(2)Si nanowires and the electrical transport studies of single Co(2)Si nanowire devices at low temperature. The butterfly shaped magnetoresistance shows interesting ferromagnetic features, including negative magnetoresistance, hysteretic switch fields, and stepwise drops in magnetoresistance. The nonsmooth stepwise magnetoresistance response is attributed to magnetic domain wall pinning and depinning motion in the Co(2)Si nanowires probably at crystal or morphology defects. The temperature dependence of the domain wall depinning field is observed and described by a model based on thermally assisted domain wall depinning over a single energy barrier.
authors.affiliation: Department of Chemistry and Biochemistry, University of California, Los Angeles, California 90095, USA.
authors.forename: Gang
authors.initials: G
authors.lastname: Liu
authors.forename: Yung-Chen
authors.initials: YC
authors.lastname: Lin
authors.forename: Lei
authors.initials: L
authors.lastname: Liao
authors.forename: Lixin
authors.initials: L
authors.lastname: Liu
authors.forename: Yu
authors.initials: Y
authors.lastname: Chen
authors.forename: Yuan
authors.initials: Y
authors.lastname: Liu
authors.forename: Nathan O
authors.initials: NO
authors.lastname: Weiss
authors.forename: Hailong
authors.initials: H
authors.lastname: Zhou
authors.forename: Yu
authors.initials: Y
authors.lastname: Huang
authors.forename: Xiangfeng
authors.initials: X
authors.lastname: Duan
mesh_terms: D003035:Cobalt / Q000737:chemistry*; D008280:Magnetics; D053770:Nanowires / Q000737:chemistry*; D010316:Particle Size; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties; D013696:Temperature
chemical_list: D003035:Cobalt; D012825:Silicon