title: In situ growth of metal particles on 3D urchin-like WO3 nanostructures.
abstract: Metal/semiconductor hybrid materials of various sizes and morphologies have many applications in areas such as catalysis and sensing. Various organic agents are necessary to stabilize metal nanoparticles during synthesis, which leads to a layer of organic compounds present at the interfaces between the metal particles and the semiconductor supports. Generally, high-temperature oxidative treatment is used to remove the organics, which can extensively change the size and morphology of the particles, in turn altering their activity. Here we report a facile method for direct growth of noble-metal particles on WO(3) through an in situ redox reaction between weakly reductive WO(2.72) and oxidative metal salts in aqueous solution. This synthetic strategy has the advantages that it takes place in one step and requires no foreign reducing agents, stabilizing agents, or pretreatment of the precursors, making it a practical method for the controlled synthesis of metal/semiconductor hybrid nanomaterials. This synthetic method may open up a new way to develop metal-nanoparticle-loaded semiconductor composites.
authors.affiliation: International Center for Materials Nanoarchitectonics and Photocatalytic Materials Center, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan.
authors.forename: Guangcheng
authors.initials: G
authors.lastname: Xi
authors.forename: Jinhua
authors.initials: J
authors.lastname: Ye
authors.forename: Qiang
authors.initials: Q
authors.lastname: Ma
authors.forename: Ning
authors.initials: N
authors.lastname: Su
authors.forename: Hua
authors.initials: H
authors.lastname: Bai
authors.forename: Chao
authors.initials: C
authors.lastname: Wang
mesh_terms: D053768:Metal Nanoparticles / Q000737:chemistry*; D010087:Oxides / Q000737:chemistry*; D012666:Semiconductors; D014414:Tungsten / Q000737:chemistry*
chemical_list: D010087:Oxides; C511604:tungsten oxide; D014414:Tungsten