title: High-efficiency, microscale GaN light-emitting diodes and their thermal properties on unusual substrates.
abstract: A method for forming efficient, ultrathin GaN light-emitting diodes (LEDs) and for their assembly onto foreign substances is reported. The LEDs have lateral dimensions ranging from ~1 mm × 1 mm to ~25 μm × 25 μm. Quantitative experimental and theoretical studies show the benefits of small device geometry on thermal management, for both continuous and pulsed-mode operation, the latter of which suggests the potential use of these technologies in bio-integrated contexts.
authors.affiliation: Department of Materials Science and Engineering, Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA.
authors.forename: Tae-il
authors.initials: TI
authors.lastname: Kim
authors.forename: Yei Hwan
authors.initials: YH
authors.lastname: Jung
authors.forename: Jizhou
authors.initials: J
authors.lastname: Song
authors.forename: Daegon
authors.initials: D
authors.lastname: Kim
authors.forename: Yuhang
authors.initials: Y
authors.lastname: Li
authors.forename: Hoon-sik
authors.initials: HS
authors.lastname: Kim
authors.forename: Il-Sun
authors.initials: IS
authors.lastname: Song
authors.forename: Jonathan J
authors.initials: JJ
authors.lastname: Wierer
authors.forename: Hsuan An
authors.initials: HA
authors.lastname: Pao
authors.forename: Yonggang
authors.initials: Y
authors.lastname: Huang
authors.forename: John A
authors.initials: JA
authors.lastname: Rogers
mesh_terms: D004581:Electronics / Q000295:instrumentation; D005708:Gallium / Q000737:chemistry*; D008029:Lighting / Q000295:instrumentation*; D036103:Nanotechnology / Q000295:instrumentation*
chemical_list: D005708:Gallium; C027235:gallium nitrate