title: Nanopatterning of Si(001) for bottom-up fabrication of nanostructures.
abstract: The epitaxial growth of Si on Si(001) under conditions at which the (2 × n) superstructure is forming has been investigated by scanning tunneling microscopy and Monte Carlo simulations. Our experiments reveal a periodic change of the surface morphology with the surface coverage of Si. A regular (2 × n) stripe pattern is observed at coverages of 0.7-0.9 monolayers that periodically alternates with less dense surface structures at lower Si surface coverages. The MC simulations show that the growth of Si is affected by step-edge barriers, which favors the formation of a rather uniform two-dimensional framework-like configuration. Subsequent deposition of Ge onto the (2 × n) stripe pattern yields a dense array of small Ge nanostructures.
authors.affiliation: Institut für Halbleiter- und Festkörperphysik, Johannes Kepler Universität Linz, Altenbergerstrasse 69, A-4020 Linz, Austria.
authors.forename: Yanfang
authors.initials: Y
authors.lastname: Hu
authors.forename: Hedieh Hosseinzadeh
authors.initials: HH
authors.lastname: Kalachahi
authors.forename: Amal K
authors.initials: AK
authors.lastname: Das
authors.forename: Reinhold
authors.initials: R
authors.lastname: Koch
mesh_terms: D003198:Computer Simulation; D003460:Crystallization / Q000379:methods*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008956:Models, Chemical; D008958:Models, Molecular; D008968:Molecular Conformation; D054802:Molecular Imprinting / Q000379:methods*; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D046911:Macromolecular Substances; D012825:Silicon