title: Gallium hydride complexes stabilised by multidentate alkoxide ligands: precursors to thin films of Ga2O3 at low temperatures.
abstract: The donor-functionalised alkoxides {Me(3-x)N(CH(2)CH(2)O)(x)} (L(x); x = 1, 2) have been used to form gallium hydride complexes [{GaH(2)(L(1))}(2)] and [{GaH(L(2))}(2)] that are stable and isolable at room temperature. Along with a heteroleptic gallium tris(alkoxide) complex [Ga(L(1))(3)] and the dimeric complex [{GaMe(L(2))}(2)], these compounds have been used as single-source precursors for the deposition of Ga(2)O(3) by aerosol-assisted chemical vapour deposition (AACVD) with toluene as solvent. The resulting films were mostly transparent, indicating low levels of carbon contamination, and they were also mainly amorphous. However, [Ga(L(1))(3)] did contain visibly crystalline material deposited at a substrate temperature of 450 °C, by far the lowest ever observed for the CVD of gallium oxide.
authors.affiliation: Materials Chemistry Centre, Department of Chemistry, 20 Gordon Street, London, WC1H 0AJ, UK.
authors.forename: David
authors.initials: D
authors.lastname: Pugh
authors.forename: Leanne G
authors.initials: LG
authors.lastname: Bloor
authors.forename: Ivan P
authors.initials: IP
authors.lastname: Parkin
authors.forename: Claire J
authors.initials: CJ
authors.lastname: Carmalt