title: Recrystallization and reactivation of dopant atoms in ion-implanted silicon nanowires.
abstract: Recrystallization of silicon nanowires (SiNWs) after ion implantation strongly depends on the ion doses and species. Full amorphization by high-dose implantation induces polycrystal structures in SiNWs even after high-temperature annealing, with this tendency more pronounced for heavy ions. Hot-implantation techniques dramatically suppress polycrystallization in SiNWs, resulting in reversion to the original single-crystal structures and consequently high reactivation rate of dopant atoms. In this study, the chemical bonding states and electrical activities of implanted boron and phosphorus atoms were evaluated by Raman scattering and electron spin resonance, demonstrating the formation of p- and n-type SiNWs.
authors.affiliation: International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan. fukata.naoki@nims.go.jp
authors.forename: Naoki
authors.initials: N
authors.lastname: Fukata
authors.forename: Ryo
authors.initials: R
authors.lastname: Takiguchi
authors.forename: Shinya
authors.initials: S
authors.lastname: Ishida
authors.forename: Shigeki
authors.initials: S
authors.lastname: Yokono
authors.forename: Shunichi
authors.initials: S
authors.lastname: Hishita
authors.forename: Kouichi
authors.initials: K
authors.lastname: Murakami