title: Study and enhance the photovoltaic properties of narrow-bandgap Cu2SnS3 solar cell by p-n junction interface modification.
abstract: Photovoltaic properties of narrow-bandgap Cu(2)SnS(3) (CTS) are studied for the first time by employing a superstrate solar cell structure of fluorine-doped tin oxide (FTO) glass/TiO(2)/In(2)S(3)/CTS/Mo. The structural, optical, and electronic characteristics of the CTS make it great potential as bottom cell absorber material for low-cost thin film tandem solar cell application. Furthermore, by inserting a thin low temperature deposited In(2)S(3) layer between the In(2)S(3) buffer layer and the CTS absorber layer, an enhancement in the performance of the solar cell can be achieved, leading to about 75% improvement (η=1.92%) over the unmodified device (η=1.10%).
authors.affiliation: Shanghai Key Laboratory of Modern Optics System, School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, 516 Jungong Road, Shanghai 200093, China.
authors.forename: Qinmiao
authors.initials: Q
authors.lastname: Chen
authors.forename: Xiaoming
authors.initials: X
authors.lastname: Dou
authors.forename: Yi
authors.initials: Y
authors.lastname: Ni
authors.forename: Shuyi
authors.initials: S
authors.lastname: Cheng
authors.forename: Songlin
authors.initials: S
authors.lastname: Zhuang
mesh_terms: D003300:Copper / Q000737:chemistry*; D011211:Electric Power Supplies; D005461:Fluorine / Q000737:chemistry; D012993:Solar Energy; D017971:Tin Compounds / Q000737:chemistry*
chemical_list: D017971:Tin Compounds; D005461:Fluorine; D003300:Copper; C045358:stannic oxide