title: Ultrahigh sensitive piezotronic strain sensors based on a ZnSnO3 nanowire/microwire.
abstract: We demonstrated a flexible strain sensor based on ZnSnO(3) nanowires/microwires for the first time. High-resolution transmission electron microscopy indicates that the ZnSnO(3) belongs to a rhombohedral structure with an R3c space group and is grown along the [001] axis. On the basis of our experimental observation and theoretical calculation, the characteristic I-V curves of ZnSnO(3) revealed that our strain sensors had ultrahigh sensitivity, which is attributed to the piezopotential-modulated change in Schottky barrier height (SBH), that is, the piezotronic effect. The on/off ratio of our device is ∼587, and a gauge factor of 3740 has been demonstrated, which is 19 times higher than that of Si and three times higher than those of carbon nanotubes and ZnO nanowires.
authors.affiliation: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.
authors.forename: Jyh Ming
authors.initials: JM
authors.lastname: Wu
authors.forename: Cheng-Ying
authors.initials: CY
authors.lastname: Chen
authors.forename: Yan
authors.initials: Y
authors.lastname: Zhang
authors.forename: Kuan-Hsueh
authors.initials: KH
authors.lastname: Chen
authors.forename: Ya
authors.initials: Y
authors.lastname: Yang
authors.forename: Youfan
authors.initials: Y
authors.lastname: Hu
authors.forename: Jr-Hau
authors.initials: JH
authors.lastname: He
authors.forename: Zhong Lin
authors.initials: ZL
authors.lastname: Wang