title: Synthesis of large-area MoS2 atomic layers with chemical vapor deposition.
abstract: Large-area MoS(2)  atomic layers are synthesized on SiO(2)  substrates by chemical vapor deposition using MoO(3)  and S powders as the reactants. Optical, microscopic and electrical measurements suggest that the synthetic process leads to the growth of MoS(2)  monolayer. The TEM images verify that the synthesized MoS(2)  sheets are highly crystalline.
authors.affiliation: Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan.
authors.forename: Yi-Hsien
authors.initials: YH
authors.lastname: Lee
authors.forename: Xin-Quan
authors.initials: XQ
authors.lastname: Zhang
authors.forename: Wenjing
authors.initials: W
authors.lastname: Zhang
authors.forename: Mu-Tung
authors.initials: MT
authors.lastname: Chang
authors.forename: Cheng-Te
authors.initials: CT
authors.lastname: Lin
authors.forename: Kai-Di
authors.initials: KD
authors.lastname: Chang
authors.forename: Ya-Chu
authors.initials: YC
authors.lastname: Yu
authors.forename: Jacob Tse-Wei
authors.initials: JT
authors.lastname: Wang
authors.forename: Chia-Seng
authors.initials: CS
authors.lastname: Chang
authors.forename: Lain-Jong
authors.initials: LJ
authors.lastname: Li
authors.forename: Tsung-Wu
authors.initials: TW
authors.lastname: Lin
mesh_terms: D004220:Disulfides / Q000737:chemistry*; D005740:Gases / Q000737:chemistry*; D008982:Molybdenum / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry / Q000648:ultrastructure; D010087:Oxides / Q000737:chemistry; D012822:Silicon Dioxide / Q000737:chemistry
chemical_list: D004220:Disulfides; D005740:Gases; D010087:Oxides; C082290:molybdenum trioxide; D012822:Silicon Dioxide; D008982:Molybdenum; C082964:molybdenum disulfide