title: Ferroelectric-carbon nanotube memory devices.
abstract: One-dimensional ferroelectric nanostructures, carbon nanotubes (CNT) and CNT-inorganic oxides have recently been studied due to their potential applications for microelectronics. Here, we report coating of a registered array of aligned multi-wall carbon nanotubes (MWCNT) grown on silicon substrates by functional ferroelectric Pb(Zr,Ti)O3 (PZT) which produces structures suitable for commercial prototype memories. Microstructural analysis reveals the crystalline nature of PZT with small nanocrystals aligned in different directions. First-order Raman modes of MWCNT and PZT/MWCNT/n-Si show the high structural quality of CNT before and after PZT deposition at elevated temperature. PZT exists mostly in the monoclinic Cc/Cm phase, which is the origin of the high piezoelectric response in the system. Low-loss square piezoelectric hysteresis obtained for the 3D bottom-up structure confirms the switchability of the device. Current-voltage mapping of the device by conducting atomic force microscopy (c-AFM) indicates very low transient current. Fabrication and functional properties of these hybrid ferroelectric-carbon nanotubes is the first step towards miniaturization for future nanotechnology sensors, actuators, transducers and memory devices.
authors.affiliation: Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, San Juan, PR. ashok553@gmail.com
authors.forename: Ashok
authors.initials: A
authors.lastname: Kumar
authors.forename: Sai G
authors.initials: SG
authors.lastname: Shivareddy
authors.forename: Margarita
authors.initials: M
authors.lastname: Correa
authors.forename: Oscar
authors.initials: O
authors.lastname: Resto
authors.forename: Youngjin
authors.initials: Y
authors.lastname: Choi
authors.forename: Matthew T
authors.initials: MT
authors.lastname: Cole
authors.forename: Ram S
authors.initials: RS
authors.lastname: Katiyar
authors.forename: James F
authors.initials: JF
authors.lastname: Scott
authors.forename: Gehan A J
authors.initials: GA
authors.lastname: Amaratunga
authors.forename: Haidong
authors.initials: H
authors.lastname: Lu
authors.forename: Alexei
authors.initials: A
authors.lastname: Gruverman
mesh_terms: D016248:Computer Storage Devices; D004553:Electric Conductivity; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007854:Lead / Q000737:chemistry*; D055617:Micro-Electrical-Mechanical Systems / Q000295:instrumentation*; D036103:Nanotechnology / Q000295:instrumentation*; D037742:Nanotubes, Carbon / Q000737:chemistry* / Q000648:ultrastructure; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D014025:Titanium / Q000737:chemistry*; D015040:Zirconium / Q000737:chemistry*
chemical_list: D037742:Nanotubes, Carbon; C065536:lead titanate zirconate; D007854:Lead; D015040:Zirconium; D014025:Titanium