title: Delayed crystallization of ultrathin Gd2O3 layers on Si(111) observed by in situ X-ray diffraction.
abstract: We studied the early stages of Gd2O3 epitaxy on Si(111) in real time by synchrotron-based, high-resolution X-ray diffraction and by reflection high-energy electron diffraction. A comparison between model calculations and the measured X-ray scattering, and the change of reflection high-energy electron diffraction patterns both indicate that the growth begins without forming a three-dimensional crystalline film. The cubic bixbyite structure of Gd2O3 appears only after a few monolayers of deposition.
authors.affiliation: Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, Berlin, D-10117, Germany. hanke@pdi-berlin.de.
authors.forename: Michael
authors.initials: M
authors.lastname: Hanke
authors.forename: Vladimir M
authors.initials: VM
authors.lastname: Kaganer
authors.forename: Oliver
authors.initials: O
authors.lastname: Bierwagen
authors.forename: Michael
authors.initials: M
authors.lastname: Niehle
authors.forename: Achim
authors.initials: A
authors.lastname: Trampert