title: Pitch reduction lithography by pressure-assisted selective wetting and thermal reflow.
abstract: We report on a new pitch reduction lithographic technique by utilizing pressure-assisted selective wetting and thermal reflow. The primary line-and-space pattern of low molecular weight polystyrene (PS) (Mw=17,300) was formed by solvent-assisted capillary force lithography (CFL), on which a diluted photoresist (PR) solution was selectively filled into the spaces by the application of a slight pressure (200 g cm(-2)). Subsequent removal of the PS pattern by toluene and ashing process led to a line pattern with approximately 50% pitch reduction. It was observed that the size reduction and space to width ratios were controllable by changing PR concentration and ashing time.
authors.affiliation: School of Mechanical and Aerospace Engineering, World Class University (WCU), Program on Multiscale Design, Seoul National University, Seoul 151-742, Republic of Korea.
authors.forename: Hyung Sik
authors.initials: HS
authors.lastname: Um
authors.forename: Jae Joon
authors.initials: JJ
authors.lastname: Chae
authors.forename: Sung Hoon
authors.initials: SH
authors.lastname: Lee
authors.forename: Yudi
authors.initials: Y
authors.lastname: Rahmawan
authors.forename: Kahp Y
authors.initials: KY
authors.lastname: Suh
mesh_terms: D004129:Dimethylpolysiloxanes / Q000737:chemistry; D055616:Microtechnology / Q000379:methods*; D010084:Oxidation-Reduction; D011137:Polystyrenes / Q000737:chemistry; D011312:Pressure; D013696:Temperature; D017155:Wettability
chemical_list: D004129:Dimethylpolysiloxanes; D011137:Polystyrenes