title: Enhanced lithographic imaging layer meets semiconductor manufacturing specification a decade early.
authors.affiliation: Argonne National Laboratory, Center for Nanoscale Materials, 9700 S. Cass Ave., Argonne, IL, USA.
authors.forename: Yu-Chih
authors.initials: YC
authors.lastname: Tseng
authors.forename: Anil U
authors.initials: AU
authors.lastname: Mane
authors.forename: Jeffrey W
authors.initials: JW
authors.lastname: Elam
authors.forename: Seth B
authors.initials: SB
authors.lastname: Darling
mesh_terms: D000537:Aluminum Oxide / Q000737:chemistry; D019904:Polymethyl Methacrylate / Q000737:chemistry; D012666:Semiconductors; D012822:Silicon Dioxide / Q000737:chemistry
chemical_list: D012822:Silicon Dioxide; D019904:Polymethyl Methacrylate; D000537:Aluminum Oxide