title: Understanding charge transfer at PbS-decorated graphene surfaces toward a tunable photosensor.
abstract: An intrinsic mechanism of photoinduced hole transfer reactions occurring at the grapheme-PbS interface is described with the purpose of building a tunable photosensor with a responsivity of more than 10(3) A W(-1) . It is remarkable that rational utilization of this finding also realizes symmetric, opposing photoswitching effects, which are effectively mirror images, in a single pristine graphene device. These results highlight the vital importance of interface modification as a powerful tool for creating future ultrasensitive optoelectronic devices.
authors.affiliation: Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, PR China.
authors.forename: Dayong
authors.initials: D
authors.lastname: Zhang
authors.forename: Lin
authors.initials: L
authors.lastname: Gan
authors.forename: Yang
authors.initials: Y
authors.lastname: Cao
authors.forename: Qing
authors.initials: Q
authors.lastname: Wang
authors.forename: Limin
authors.initials: L
authors.lastname: Qi
authors.forename: Xuefeng
authors.initials: X
authors.lastname: Guo
mesh_terms: D006108:Graphite / Q000737:chemistry*; D007854:Lead / Q000737:chemistry*; D055096:Optical Devices; D045663:Quantum Dots; D011789:Quantum Theory; D013440:Sulfides / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D013440:Sulfides; C018391:lead sulfide; D007854:Lead; D006108:Graphite