title: Electronic transport with dielectric confinement in degenerate InN nanowires.
abstract: In this Letter, we present the size effects on charge conduction in InN nanowires by comprehensive transport studies supported by theoretical analysis. A consistent model for highly degenerate narrow gap semiconductor nanowires is developed. In contrast to common knowledge of InN, there is no evidence of an enhanced surface conduction, however, high intrinsic doping exists. Furthermore, the room-temperature resistivity exhibits a strong increase when the lateral size becomes smaller than 80 nm and the temperature dependence changes from metallic to semiconductor-like. This effect is modeled by donor deactivation due to dielectric confinement, yielding a shift of the donor band to higher ionization energies as the size shrinks.
authors.affiliation: Peter Grünberg Institut (PGI-9) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany. c.bloemers@fz-juelich.de
authors.forename: Ch
authors.initials: Ch
authors.lastname: Blömers
authors.forename: J G
authors.initials: JG
authors.lastname: Lu
authors.forename: L
authors.initials: L
authors.lastname: Huang
authors.forename: C
authors.initials: C
authors.lastname: Witte
authors.forename: D
authors.initials: D
authors.lastname: Grützmacher
authors.forename: H
authors.initials: H
authors.lastname: Lüth
authors.forename: Th
authors.initials: T
authors.lastname: Schäpers
mesh_terms: D003198:Computer Simulation; D004553:Electric Conductivity; D004579:Electron Transport; D007204:Indium / Q000737:chemistry*; D008956:Models, Chemical; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*
chemical_list: D007204:Indium; C513701:indium nitride