title: P-i-n junction quantum dot saturable absorber mirror: electrical control of ultrafast dynamics.
abstract: We report on nonlinear optical properties of a p-i-n junction quantum dot saturable absorber based on InGaAs/GaAs. Absorption recovery dynamics and nonlinear reflectivity are investigated for different reverse bias and pump power conditions. A decrease in absorption recovery time of nearly two orders of magnitude is demonstrated by applying a voltage between 0 and -20 V. The saturable absorber modulation depth and saturation fluence are found to be independent from the applied reverse bias.
authors.affiliation: School of Engineering, Physics and Mathematics, University of Dundee, Dundee DD1 4HN, UK. sz27@st-andrews.ac.uk
authors.forename: Svetlana A
authors.initials: SA
authors.lastname: Zolotovskaya
authors.forename: Mantas
authors.initials: M
authors.lastname: Butkus
authors.forename: Reto
authors.initials: R
authors.lastname: Häring
authors.forename: Andreas
authors.initials: A
authors.lastname: Able
authors.forename: Wilhelm
authors.initials: W
authors.lastname: Kaenders
authors.forename: Igor L
authors.initials: IL
authors.lastname: Krestnikov
authors.forename: Daniil A
authors.initials: DA
authors.lastname: Livshits
authors.forename: Edik U
authors.initials: EU
authors.lastname: Rafailov