title: Bias stress effect in "air-gap" organic field-effect transistors.
abstract: The origin of the bias stress effect related only to semiconductor properties is investigated in "air-gap" organic field-effect transistors (OFETs) in the absence of a material gate dielectric. The effect becomes stronger as the density of trap states in the semiconductor increases. A theoretical model based on carrier trapping and relaxation in localized tail states is formulated. Polar molecular vapors in the gap of "air-gap" OFETs also have a significant impact on the bias stress effect via the formation of bound states between the charge carriers and molecular dipoles at the semiconductor surface.
authors.affiliation: Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA.
authors.forename: Y
authors.initials: Y
authors.lastname: Chen
authors.forename: V
authors.initials: V
authors.lastname: Podzorov
mesh_terms: D000388:Air; D003460:Crystallization; D037741:Fullerenes / Q000737:chemistry; D008962:Models, Theoretical; D009279:Naphthacenes / Q000737:chemistry; D014173:Transistors, Electronic
chemical_list: D037741:Fullerenes; D009279:Naphthacenes; C530172:pristine (C60); C045049:rubrene