title: Diameter and polarization-dependent Raman scattering intensities of semiconductor nanowires.
abstract: Diameter-dependent Raman scattering in single tapered silicon nanowires is measured and quantitatively reproduced by modeling with finite-difference time-domain simulations. Single crystal tapered silicon nanowires were produced by homoepitaxial radial growth concurrent with vapor-liquid-solid axial growth. Multiple electromagnetic resonances along the nanowire induce broad band light absorption and scattering. Observed Raman scattering intensities for multiple polarization configurations are reproduced by a model that accounts for the internal electromagnetic mode structure of both the exciting and scattered light. Consequences for the application of Stokes to anti-Stokes intensity ratio for the estimation of lattice temperature are discussed.
authors.affiliation: Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA. francisco1591@gmail.com
authors.forename: Francisco J
authors.initials: FJ
authors.lastname: Lopez
authors.forename: Jerome K
authors.initials: JK
authors.lastname: Hyun
authors.forename: Uri
authors.initials: U
authors.lastname: Givan
authors.forename: In Soo
authors.initials: IS
authors.lastname: Kim
authors.forename: Aaron L
authors.initials: AL
authors.lastname: Holsteen
authors.forename: Lincoln J
authors.initials: LJ
authors.lastname: Lauhon