title: Highly efficient single-layer polymer ambipolar light-emitting field-effect transistors.
abstract: Single-layer polymer light-emitting field-effect transistors (LEFETs) that yield EQEs of >8% and luminance efficiencies >28 cd A(-1) are demonstrated. These values are the highest reported for LEFETs and amongst the highest values for fluorescent OLEDs. Due to the electrostatics of the ambipolar LEFET channel, LEFETs provide an inherent advantage over OLEDs in terms of minimizing exciton-polaron quenching.
authors.affiliation: Department of Physics, Cavendish Laboratory, Cambridge, UK.
authors.forename: Michael C
authors.initials: MC
authors.lastname: Gwinner
authors.forename: Dinesh
authors.initials: D
authors.lastname: Kabra
authors.forename: Matthew
authors.initials: M
authors.lastname: Roberts
authors.forename: Thomas J K
authors.initials: TJ
authors.lastname: Brenner
authors.forename: Bodo H
authors.initials: BH
authors.lastname: Wallikewitz
authors.forename: Christopher R
authors.initials: CR
authors.lastname: McNeill
authors.forename: Richard H
authors.initials: RH
authors.lastname: Friend
authors.forename: Henning
authors.initials: H
authors.lastname: Sirringhaus
mesh_terms: D008027:Light; D011108:Polymers / Q000737:chemistry*; D019904:Polymethyl Methacrylate / Q000737:chemistry; D014173:Transistors, Electronic; D015034:Zinc Oxide / Q000737:chemistry
chemical_list: D011108:Polymers; D019904:Polymethyl Methacrylate; D015034:Zinc Oxide