title: Memristive tri-stable resistive switching at ruptured conducting filaments of a Pt/TiO₂/Pt cell.
abstract: A tri-stable memristive switching was demonstrated on a Pt/TiO₂/Pt device and its underlying mechanism was suggested through a series of electrical measurements. Tri-stable switching could be initiated from a device in unipolar reset status. The unipolar reset status was obtained by performing an electroforming step on a pristine cell which was then followed by unipolar reset switching. It was postulated that tri-stable switching occurred at the location where the conductive filament (initially formed by the electroforming step) was ruptured by a subsequent unipolar reset process. The mechanism of the tri-stable memristive switching presented in this article was attributed to the migration of oxygen ions through the ruptured filament region and the resulting modulation of the Schottky-like interfaces. The assertion was further supported by a comparison study performed on a Pt/TiO₂/TiO(2-x)/Pt cell.
authors.affiliation: WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea.
authors.forename: Kyung Jean
authors.initials: KJ
authors.lastname: Yoon
authors.forename: Min Hwan
authors.initials: MH
authors.lastname: Lee
authors.forename: Gun Hwan
authors.initials: GH
authors.lastname: Kim
authors.forename: Seul Ji
authors.initials: SJ
authors.lastname: Song
authors.forename: Jun Yeong
authors.initials: JY
authors.lastname: Seok
authors.forename: Sora
authors.initials: S
authors.lastname: Han
authors.forename: Jung Ho
authors.initials: JH
authors.lastname: Yoon
authors.forename: Kyung Min
authors.initials: KM
authors.lastname: Kim
authors.forename: Cheol Seong
authors.initials: CS
authors.lastname: Hwang