title: Direct imaging of single Au atoms within GaAs nanowires.
abstract: Incorporation of catalyst atoms during the growth process of semiconductor nanowires reduces the electron mean free path and degrades their electronic properties. Aberration-corrected scanning transmission electron microscopy (STEM) is now capable of directly imaging single Au atoms within the dense matrix of a GaAs crystal, by slightly tilting the GaAs lattice planes with respect to the incident electron beam. Au doping values in the order of 10(17-18) cm(3) were measured, making ballistic transport through the nanowires practically inaccessible.
authors.affiliation: Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany. barsadan@bgu.ac.il
authors.forename: Maya
authors.initials: M
authors.lastname: Bar-Sadan
authors.forename: Juri
authors.initials: J
authors.lastname: Barthel
authors.forename: Hadas
authors.initials: H
authors.lastname: Shtrikman
authors.forename: Lothar
authors.initials: L
authors.lastname: Houben