title: Sub-20 nm laser ablation for lithographic dry development.
abstract: Pattern collapse of small or high aspect ratio lines during traditional wet development is a major challenge for miniaturization in nanolithography. Here we report on a new dry process which combines high resolution resist exposure with selective laser ablation to achieve high resolution with high aspect ratios. Using a low power 532 nm laser, we dry develop a normally negative tone methyl acetoxy calix(6)arene in positive tone to reveal sub-20 nm half-pitch features in a ∼100 nm film at aspect ratios unattainable with conventional development with ablation time of 1-2 s per laser pixel (∼600 nm diameter spot).  We also demonstrate superior negative tone wet development by combining electron beam exposure with subsequent laser exposure at a non-ablative threshold that requires far less electron beam exposure doses than traditional wet development.
authors.affiliation: Molecular Foundry, 1 Cyclotron Road, MS 2206R67, CA 94720, USA.
authors.forename: D G
authors.initials: DG
authors.lastname: de Oteyza
authors.forename: P N
authors.initials: PN
authors.lastname: Perera
authors.forename: M
authors.initials: M
authors.lastname: Schmidt
authors.forename: M
authors.initials: M
authors.lastname: Falch
authors.forename: S D
authors.initials: SD
authors.lastname: Dhuey
authors.forename: B D
authors.initials: BD
authors.lastname: Harteneck
authors.forename: A M
authors.initials: AM
authors.lastname: Schwartzberg
authors.forename: P J
authors.initials: PJ
authors.lastname: Schuck
authors.forename: S
authors.initials: S
authors.lastname: Cabrini
authors.forename: D L
authors.initials: DL
authors.lastname: Olynick