title: Visible-NIR photodetectors based on CdTe nanoribbons.
abstract: Zinc blende-structured CdTe nanoribbons (NRs) were synthesized for the first time via a two-step process. The electronic, transport, and photoconductive properties of the CdTe NRs were studied systematically. It was revealed that the CdTe NRs showed p-type conductivity, and presented significant photoresponses to visible-NIR (400-800 nm) irradiation with high responsivity and gain. The contribution of the factors such as surface states of NRs, channel length, light intensity, and working bias voltage to the photoresponse characteristics of CdTe NR photodetectors were discussed. Moreover, single CdTe NR-based visible-NIR photodetectors were also demonstrated to have high stability and reliability.
authors.affiliation: Centre Of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Hong Kong SAR, PR China.
authors.forename: Xing
authors.initials: X
authors.lastname: Xie
authors.forename: So-Ying
authors.initials: SY
authors.lastname: Kwok
authors.forename: Zhenzhen
authors.initials: Z
authors.lastname: Lu
authors.forename: Yankuan
authors.initials: Y
authors.lastname: Liu
authors.forename: Yulin
authors.initials: Y
authors.lastname: Cao
authors.forename: Linbao
authors.initials: L
authors.lastname: Luo
authors.forename: J A
authors.initials: JA
authors.lastname: Zapien
authors.forename: Igor
authors.initials: I
authors.lastname: Bello
authors.forename: Chun-Sing
authors.initials: CS
authors.lastname: Lee
authors.forename: Shuit-Tong
authors.initials: ST
authors.lastname: Lee
authors.forename: Wenjun
authors.initials: W
authors.lastname: Zhang