title: High mobility flexible graphene field-effect transistors with self-healing gate dielectrics.
abstract: A high-mobility low-voltage graphene field-effect transistor (FET) array was fabricated on a flexible plastic substrate using high-capacitance natural aluminum oxide as a gate dielectric in a self-aligned device configuration. The high capacitance of the native aluminum oxide and the self-alignment, which minimizes access resistance, yield a high current on/off ratio and an operation voltage below 3 V, along with high electron and hole mobility of 230 and 300 cm(2)/V·s, respectively. Moreover, the native aluminum oxide is resistant to mechanical bending and exhibits self-healing upon electrical breakdown. These results indicate that self-aligned graphene FETs can provide remarkably improved device performance and stability for a range of applications in flexible electronics.
authors.affiliation: Department of Electrical Engineering, Materials Science and Microsystems, National Tsing Hua University, Hsinchu 30013, Taiwan.
authors.forename: Chun-Chieh
authors.initials: CC
authors.lastname: Lu
authors.forename: Yung-Chang
authors.initials: YC
authors.lastname: Lin
authors.forename: Chao-Hui
authors.initials: CH
authors.lastname: Yeh
authors.forename: Ju-Chun
authors.initials: JC
authors.lastname: Huang
authors.forename: Po-Wen
authors.initials: PW
authors.lastname: Chiu