title: Frequency-selective 3-D integration of nanoplasmonic circuits on a Si platform.
abstract: Vertical integration of nanoplasmonic circuits through the use of vertically coupled nanoring resonators was examined. The devices are shown to be capable of frequency selective signal transfer between device layers with planar device footprints on the order of 1.00 μm². The frequency selectivity of the devices is shown to be tunable through altering the radius of the coupled nanoring resonators. Coupling efficiencies of up to 39% between adjacent device layers are reached for two and three-levels coupling.
authors.affiliation: Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Alberta, T6G 2V4, Canada. mpnielse@ualberta.ca
authors.forename: M
authors.initials: M
authors.lastname: Nielsen
authors.forename: A Y
authors.initials: AY
authors.lastname: Elezzabi