title: Flexible multilevel resistive memory with controlled charge trap B- and N-doped carbon nanotubes.
abstract: B- and N-doped carbon nanotubes (CNTs) with controlled workfunctions were successfully employed as charge trap materials for solution processable, mechanically flexible, multilevel switching resistive memory. B- and N-doping systematically controlled the charge trap level and dispersibility of CNTs in polystyrene matrix. Consequently, doped CNT device demonstrated greatly enhanced nonvolatile memory performance (ON-OFF ratio >10(2), endurance cycle >10(2), retention time >10(5)) compared to undoped CNT device. More significantly, the device employing both B- and N-doped CNTs with different charge trap levels exhibited multilevel resistive switching with a discrete and stable intermediate state. Charge trapping materials with different energy levels offer a novel design scheme for solution processable multilevel memory.
authors.affiliation: Department of Materials Science and Engineering, KAIST, Daejeon 305-701, Republic of Korea.
authors.forename: Sun Kak
authors.initials: SK
authors.lastname: Hwang
authors.forename: Ju Min
authors.initials: JM
authors.lastname: Lee
authors.forename: Seungjun
authors.initials: S
authors.lastname: Kim
authors.forename: Ji Sun
authors.initials: JS
authors.lastname: Park
authors.forename: Hyung Il
authors.initials: HI
authors.lastname: Park
authors.forename: Chi Won
authors.initials: CW
authors.lastname: Ahn
authors.forename: Keon Jae
authors.initials: KJ
authors.lastname: Lee
authors.forename: Takhee
authors.initials: T
authors.lastname: Lee
authors.forename: Sang Ouk
authors.initials: SO
authors.lastname: Kim