title: 1 W at 785 nm from a frequency-doubled wafer-fused semiconductor disk laser.
abstract: We demonstrate an optically pumped semiconductor disk laser operating at 1580 nm with 4.6 W of output power, which represents the highest output power reported from this type of laser. 1 W of output power at 785 nm with nearly diffraction-limited beam has been achieved from this laser through intracavity frequency doubling, which offers an attractive alternative to Ti:sapphire lasers and laser diodes in a number of applications, e.g., in spectroscopy, atomic cooling and biophotonics.
authors.affiliation: Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720 Tampere, Finland. antti.rantamaki@tut.fi
authors.forename: Antti
authors.initials: A
authors.lastname: Rantamäki
authors.forename: Jussi
authors.initials: J
authors.lastname: Rautiainen
authors.forename: Jari
authors.initials: J
authors.lastname: Lyytikäinen
authors.forename: Alexei
authors.initials: A
authors.lastname: Sirbu
authors.forename: Alexandru
authors.initials: A
authors.lastname: Mereuta
authors.forename: Eli
authors.initials: E
authors.lastname: Kapon
authors.forename: Oleg G
authors.initials: OG
authors.lastname: Okhotnikov
mesh_terms: D004867:Equipment Design; D054023:Lasers, Semiconductor; D053844:Lasers, Solid-State; D008027:Light; D055620:Optical Phenomena