title: Bending effects of ZnO nanorod metal-semiconductor-metal photodetectors on flexible polyimide substrate.
abstract: The authors report the fabrication and I-V characteristics of ZnO nanorod metal-semiconductor-metal photodetectors on flexible polyimide substrate. From field-emission scanning electron microscopy and X-ray diffraction spectrum, ZnO nanorods had a (0002) crystal orientation and a wurtzite hexagonal structure. During the I-V and response measurement, the flexible substrates were measured with (i.e., the radius of curvatures was 0.2 cm) and without bending. From I-V results, the dark current decreased, and the UV-to-visible rejection ratio increased slightly in bending situation. The decreasing tendency of the dark current under bending condition may be attributed to the increase of the Schottky barrier height.
authors.affiliation: Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, 701, Taiwan. shengjoueyoung@gmail.com.
authors.forename: Tse-Pu
authors.initials: TP
authors.lastname: Chen
authors.forename: Sheng-Joue
authors.initials: SJ
authors.lastname: Young
authors.forename: Shoou-Jinn
authors.initials: SJ
authors.lastname: Chang
authors.forename: Chih-Hung
authors.initials: CH
authors.lastname: Hsiao
authors.forename: Yu-Jung
authors.initials: YJ
authors.lastname: Hsu