title: Solution processed MoO3 interfacial layer for organic photovoltaics prepared by a facile synthesis method.
abstract: An MoO(3)  film spin-coated from a solution prepared by an extremely facile and cost-effective synthetic method is introduced as an anode buffer layer of bulk-heterojunction polymer photovoltaic devices. The device efficiency using the MoO(3)  anode buffer layer is comparable to that using a conventional PEDOT:PSS layer without annealing at an elevated temperature.
authors.affiliation: Department of Material Science and Engineering, University of California-Los Angeles, CA 90025, USA.
authors.forename: Seiichiro
authors.initials: S
authors.lastname: Murase
authors.forename: Yang
authors.initials: Y
authors.lastname: Yang
mesh_terms: D004566:Electrodes; D008982:Molybdenum / Q000737:chemistry*; D010087:Oxides / Q000737:chemistry*; D011137:Polystyrenes / Q000737:chemistry; D012993:Solar Energy; D012996:Solutions / Q000737:chemistry*; D013696:Temperature; D013876:Thiophenes / Q000737:chemistry; D017971:Tin Compounds / Q000737:chemistry
chemical_list: D010087:Oxides; D011137:Polystyrenes; D012996:Solutions; D013876:Thiophenes; D017971:Tin Compounds; C533756:poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate); C082290:molybdenum trioxide; C109984:indium tin oxide; D008982:Molybdenum