title: Monolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver.
abstract: On the silicon (Si) photonic platform, we monolithically integrated a silica-based arrayed-waveguide grating (AWG) and germanium (Ge) photodiodes (PDs) using low-temperature fabrication technology. We confirmed demultiplexing by the AWG, optical-electrical signal conversion by Ge PDs, and high-speed signal detection at all channels. In addition, we mounted a multichannel transimpedance amplifier/limiting amplifier (TIA/LA) circuit on the fabricated AWG-PD device using flip-chip bonding technology. The results show the promising potential of our Si photonic platform as a photonics-electronics convergence.
authors.affiliation: NTT Microsystem Integration Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan. nishi.hidetaka@lab.ntt.co.jp
authors.forename: Hidetaka
authors.initials: H
authors.lastname: Nishi
authors.forename: Tai
authors.initials: T
authors.lastname: Tsuchizawa
authors.forename: Rai
authors.initials: R
authors.lastname: Kou
authors.forename: Hiroyuki
authors.initials: H
authors.lastname: Shinojima
authors.forename: Takashi
authors.initials: T
authors.lastname: Yamada
authors.forename: Hideaki
authors.initials: H
authors.lastname: Kimura
authors.forename: Yasuhiko
authors.initials: Y
authors.lastname: Ishikawa
authors.forename: Kazumi
authors.initials: K
authors.lastname: Wada
authors.forename: Koji
authors.initials: K
authors.lastname: Yamada