title: Enabling universal memory by overcoming the contradictory speed and stability nature of phase-change materials.
abstract: The quest for universal memory is driving the rapid development of memories with superior all-round capabilities in non-volatility, high speed, high endurance and low power. Phase-change materials are highly promising in this respect. However, their contradictory speed and stability properties present a key challenge towards this ambition. We reveal that as the device size decreases, the phase-change mechanism changes from the material inherent crystallization mechanism (either nucleation- or growth-dominated), to the hetero-crystallization mechanism, which resulted in a significant increase in PCRAM speeds. Reducing the grain size can further increase the speed of phase-change. Such grain size effect on speed becomes increasingly significant at smaller device sizes. Together with the nano-thermal and electrical effects, fast phase-change, good stability and high endurance can be achieved. These findings lead to a feasible solution to achieve a universal memory.
authors.forename: Weijie
authors.initials: W
authors.lastname: Wang
authors.forename: Desmond
authors.initials: D
authors.lastname: Loke
authors.forename: Luping
authors.initials: L
authors.lastname: Shi
authors.forename: Rong
authors.initials: R
authors.lastname: Zhao
authors.forename: Hongxin
authors.initials: H
authors.lastname: Yang
authors.forename: Leong-Tat
authors.initials: LT
authors.lastname: Law
authors.forename: Lung-Tat
authors.initials: LT
authors.lastname: Ng
authors.forename: Kian-Guan
authors.initials: KG
authors.lastname: Lim
authors.forename: Yee-Chia
authors.initials: YC
authors.lastname: Yeo
authors.forename: Tow-Chong
authors.initials: TC
authors.lastname: Chong
authors.forename: Andrea L
authors.initials: AL
authors.lastname: Lacaita