title: High-speed photodiodes for InP-based photonic integrated circuits.
abstract: We demonstrate the feasibility of monolithic integration of evanescently coupled Uni-Traveling Carrier Photodiodes (UTC-PDs) having a bandwidth exceeding 100 GHz with Multimode Interference (MMI) couplers. This platform is suitable for active-passive, butt-joint monolithic integration with various Multiple Quantum Well (MQW) devices for narrow linewidth millimeter-wave photomixing sources. The fabricated devices achieved a high 3-dB bandwidth of up to 110 GHz and a generated output power of more than 0 dBm (1 mW) at 120 GHz with a flat frequency response over the microwave F-band (90-140 GHz).
authors.affiliation: Department of Electronic and Electrical Engineering, University College London, Torrington Place, WC1E 7JE, UK. e.rouvalis@ee.ucl.ac.uk
authors.forename: E
authors.initials: E
authors.lastname: Rouvalis
authors.forename: M
authors.initials: M
authors.lastname: Chtioui
authors.forename: M
authors.initials: M
authors.lastname: Tran
authors.forename: F
authors.initials: F
authors.lastname: Lelarge
authors.forename: F
authors.initials: F
authors.lastname: van Dijk
authors.forename: M J
authors.initials: MJ
authors.lastname: Fice
authors.forename: C C
authors.initials: CC
authors.lastname: Renaud
authors.forename: G
authors.initials: G
authors.lastname: Carpintero
authors.forename: A J
authors.initials: AJ
authors.lastname: Seeds