title: n- and p-Type modulation of ZnO nanomesh coated graphene field effect transistors.
abstract: Periodic zinc oxide (ZnO) nanomeshes of different thicknesses were deposited on single-layer graphene to form back-gated field effect transistors (GFETs). The GFETs exhibit tunable electronic properties, featuring n- and p-type characteristics by merely controlling the thickness of the ZnO nanomesh layer. Furthermore, the effect of thermal strain on the GFETs from the substrate is suppressed by the ZnO nanomesh, which improves the thermal stability of the GFETs. This nanopatterning technique could modulate the electronic properties of the GFETs effectively.
authors.affiliation: Department of Applied Physics and Materials Research Centre, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, China.
authors.forename: Yeung Yu
authors.initials: YY
authors.lastname: Hui
authors.forename: Guo'an
authors.initials: G
authors.lastname: Tai
authors.forename: Zhenhua
authors.initials: Z
authors.lastname: Sun
authors.forename: Zihan
authors.initials: Z
authors.lastname: Xu
authors.forename: Ning
authors.initials: N
authors.lastname: Wang
authors.forename: Feng
authors.initials: F
authors.lastname: Yan
authors.forename: Shu Ping
authors.initials: SP
authors.lastname: Lau
mesh_terms: D004566:Electrodes; D006046:Gold / Q000737:chemistry; D006108:Graphite / Q000737:chemistry*; D012822:Silicon Dioxide; D013499:Surface Properties; D013696:Temperature; D014173:Transistors, Electronic; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D006046:Gold; D012822:Silicon Dioxide; D006108:Graphite; D015034:Zinc Oxide