title: Dependences of photoluminescence from P-implanted epitaxial Ge.
abstract: A systematic investigation has been carried out to study the influence of various annealings and implantations on the photoluminescence (PL) properties of phosphorus (P)-implanted Ge epitaxial films on Si substrate. For un-capped Ge samples, rapid thermal annealing (RTA) at 700 °C for 300 seconds yields the strongest PL emission peaked at 1550 nm. The influence of employing various capping layers (i.e., SiO(2), Si(3)N(4), and α-Si ) on the PL properties has been investigated. The capping layers are found to effectively decrease the dopant loss, leading to a significant PL enhancement. Si(3)N(4) is found to be the most efficient capping layer to prevent dopant out-diffusion and thus lead to strongest PL. Furthermore, it has been found that capping layers not only enhance the PL intensities but also make PL emission peak red- and blue- shift, depending on the stress type of the capping films. The effect of implantation dose on the PL has been also investigated.
authors.affiliation: Institute of Microelectronics, A STAR (Agency for Science, technology and Research), 11 Science Park Road, Science Park II, 117685 Singapore. dingl@ime.a-satr.edu.sg
authors.forename: L
authors.initials: L
authors.lastname: Ding
authors.forename: Andy Eu-Jin
authors.initials: AE
authors.lastname: Lim
authors.forename: Jason Tsung-Yang
authors.initials: JT
authors.lastname: Liow
authors.forename: M B
authors.initials: MB
authors.lastname: Yu
authors.forename: G-Q
authors.initials: GQ
authors.lastname: Lo