title: Strain-induced changes to the electronic structure of germanium.
abstract: Density  functional theory calculations (DFT) are used to investigate the strain-induced changes to the electronic structure of biaxially strained (parallel to the (001), (110) and (111) planes) and uniaxially strained (along the [001], [110] and [111] directions) germanium (Ge). It is calculated that a moderate uniaxial strain parallel to the [111] direction can efficiently transform Ge to a direct bandgap material with a bandgap energy useful for technological applications.
authors.affiliation: Department of Materials, Imperial College London, London, UK. h.tahini09@imperial.ac.uk
authors.forename: H
authors.initials: H
authors.lastname: Tahini
authors.forename: A
authors.initials: A
authors.lastname: Chroneos
authors.forename: R W
authors.initials: RW
authors.lastname: Grimes
authors.forename: U
authors.initials: U
authors.lastname: Schwingenschlögl
authors.forename: A
authors.initials: A
authors.lastname: Dimoulas