title: Graphene/metal contacts: bistable states and novel memory devices.
abstract: Graphene field-effect transistors (GFETs) with different metal electrodes are fabricated to explore the contact characteristics. The contact resistance and the spatial potential distribution along the graphene/metal interface are investigated. The low-doped graphene/metal contact can be reversibly switched between "ohmic" and "space-charge region limited" states. The observed switching attributes are highly reproducible and stable, which provides a new avenue to produce high-performance graphene memory devices.
authors.affiliation: Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China.
authors.forename: Xiaomu
authors.initials: X
authors.lastname: Wang
authors.forename: Weiguang
authors.initials: W
authors.lastname: Xie
authors.forename: Jun
authors.initials: J
authors.lastname: Du
authors.forename: Chengliang
authors.initials: C
authors.lastname: Wang
authors.forename: Ni
authors.initials: N
authors.lastname: Zhao
authors.forename: Jian-Bin
authors.initials: JB
authors.lastname: Xu
mesh_terms: D004566:Electrodes; D006108:Graphite / Q000737:chemistry*; D008670:Metals / Q000737:chemistry*; D012666:Semiconductors; D012822:Silicon Dioxide / Q000737:chemistry
chemical_list: D008670:Metals; D012822:Silicon Dioxide; D006108:Graphite