title: A light-controlled resistive switching memory.
abstract: Sketch of the configuration of a light-controlled resistive switching memory. Light enters through the Al(2) O(3)  uncovered surface and reaches the optically active p-Si substrate, where carriers are photogenerated and subsequently injected in the Al(2) O(3)  layer when a suitable voltage pulse is applied. The resistance of the Al(2) O(3)  can be switched between different non-volatile states, depending on the applied voltage pulse and on the illumination conditions.
authors.affiliation: CIC nanoGUNE Consolider, Tolosa Hiribidea 76, Donostia, San Sebastian, Spain. mungureanu@nanogune.eu
authors.forename: Mariana
authors.initials: M
authors.lastname: Ungureanu
authors.forename: Raul
authors.initials: R
authors.lastname: Zazpe
authors.forename: Federico
authors.initials: F
authors.lastname: Golmar
authors.forename: Pablo
authors.initials: P
authors.lastname: Stoliar
authors.forename: Roger
authors.initials: R
authors.lastname: Llopis
authors.forename: Felix
authors.initials: F
authors.lastname: Casanova
authors.forename: Luis E
authors.initials: LE
authors.lastname: Hueso
mesh_terms: D000537:Aluminum Oxide / Q000737:chemistry; D008027:Light; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry; D012822:Silicon Dioxide / Q000737:chemistry
chemical_list: D012822:Silicon Dioxide; D000537:Aluminum Oxide; D012825:Silicon