title: Reduced linewidth enhancement factor due to excited state transition of quantum dot lasers.
abstract: The carrier induced refractive index change and linewidth enhancement factor α due to ground-state (GS) and excited-state (ES) transitions have been compared by measuring the optical gain spectra from an InAs/GaAs quantum dot (QD) laser structure. It is shown that the ES transition exhibits a reduced α-factor compared to the value due to the GS transition. This result can be explained by the α-factor due to the ES transition having a smaller increase from the non-resonant carriers in the combined state of the wetting layer and InGaAs strain reducing layer than the α-factor increase due to the GS transition, since the relaxation time for carriers from the combined state of the wetting layer and InGaAs strain reducing layer to the ES is shorter than to the GS. The result reported here shows another advantage of using ES QD lasers for optical communication, in addition to their higher modulation speed.
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
authors.forename: Peng-Fei
authors.initials: PF
authors.lastname: Xu
authors.forename: Hai-Ming
authors.initials: HM
authors.lastname: Ji
authors.forename: Jin-Long
authors.initials: JL
authors.lastname: Xiao
authors.forename: Yong-Xian
authors.initials: YX
authors.lastname: Gu
authors.forename: Yong-Zhen
authors.initials: YZ
authors.lastname: Huang
authors.forename: Tao
authors.initials: T
authors.lastname: Yang