title: Transparent metal oxide nanowire transistors.
abstract: With the features of high mobility, a high electric on/off ratio and excellent transparency, metal oxide nanowires are excellent candidates for transparent thin-film transistors, which is one of the key technologies to realize transparent electronics. This article provides a comprehensive review of the state-of-the-art research activities that focus on transparent metal oxide nanowire transistors. It begins with the brief introduction to the synthetic methods for high quality metal oxide nanowires, and the typical nanowire transfer and printing techniques with emphasis on the simple contact printing methodology. High performance transparent transistors built on both single nanowires and nanowire thin films are then highlighted. The final section deals with the applications of transparent metal oxide nanowire transistors in the field of transparent displays and concludes with an outlook on the current perspectives and future directions of transparent metal oxide nanowire transistors.
authors.affiliation: Wuhan National Laboratory for Optoelectronics and College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
authors.forename: Di
authors.initials: D
authors.lastname: Chen
authors.forename: Zhe
authors.initials: Z
authors.lastname: Liu
authors.forename: Bo
authors.initials: B
authors.lastname: Liang
authors.forename: Xianfu
authors.initials: X
authors.lastname: Wang
authors.forename: Guozhen
authors.initials: G
authors.lastname: Shen
mesh_terms: D007204:Indium / Q000737:chemistry; D008163:Luminescent Measurements / Q000295:instrumentation; D008670:Metals / Q000737:chemistry*; D053770:Nanowires / Q000737:chemistry* / Q000648:ultrastructure; D010087:Oxides / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D008670:Metals; D010087:Oxides; D007204:Indium; C047711:indium oxide