title: Design of a voltage-controlled magnetic random access memory based on anisotropic magnetoresistance in a single magnetic layer.
abstract: A simple and fully gate-voltage-controlled magnetic random access memory is designed based on anisotropic magnetoresistance. This multiferroic memory device consists of just a single magnetic film grown on a ferroelectric layer with bistable in-plane anisotropic ferroelastic or piezo strains induced by out-of-plane voltages. It can simultaneously achieve ultrahigh storage density, ultralow energy consumption, and GHz high-speed operation at room temperature.
authors.affiliation: State Key Laboratory of New Ceramics and Fine Processing and Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
authors.forename: Jia-Mian
authors.initials: JM
authors.lastname: Hu
authors.forename: Zheng
authors.initials: Z
authors.lastname: Li
authors.forename: Long-Qing
authors.initials: LQ
authors.lastname: Chen
authors.forename: Ce-Wen
authors.initials: CW
authors.lastname: Nan
mesh_terms: D004548:Elasticity; D004553:Electric Conductivity; D004867:Equipment Design; D008280:Magnetics; D049329:Nanostructures / Q000737:chemistry; D012666:Semiconductors; D013696:Temperature