title: Ultra-small, self-holding, optical gate switch using Ge2Sb2Te5 with a multi-mode Si waveguide.
abstract: We report a multi-mode interference-based optical gate switch using a Ge(2)Sb(2)Te(5) thin film with a diameter of only 1 µm. The switching operation was demonstrated by laser pulse irradiation. This switch had a very wide operating wavelength range of 100 nm at around 1575 nm, with an average extinction ratio of 12.6 dB. Repetitive switching over 2,000 irradiation cycles was also successfully demonstrated. In addition, self-holding characteristics were confirmed by observing the dynamic responses, and the rise and fall times were 130 ns and 400 ns, respectively.
authors.affiliation: Graduate School of Science and Technology, Keio University, 3-14-1 Hiyoshi, Yokohama-shi, Kanagawa-ken 223-8522, Japan. d_tanaka@tsud.elec.keio.ac.jp
authors.forename: Daiki
authors.initials: D
authors.lastname: Tanaka
authors.forename: Yuya
authors.initials: Y
authors.lastname: Shoji
authors.forename: Masashi
authors.initials: M
authors.lastname: Kuwahara
authors.forename: Xiaomin
authors.initials: X
authors.lastname: Wang
authors.forename: Kenji
authors.initials: K
authors.lastname: Kintaka
authors.forename: Hitoshi
authors.initials: H
authors.lastname: Kawashima
authors.forename: Tatsuya
authors.initials: T
authors.lastname: Toyosaki
authors.forename: Yuichiro
authors.initials: Y
authors.lastname: Ikuma
authors.forename: Hiroyuki
authors.initials: H
authors.lastname: Tsuda
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D005857:Germanium / Q000737:chemistry*; D055096:Optical Devices; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry*; D020349:Surface Plasmon Resonance / Q000295:instrumentation*
chemical_list: D005857:Germanium; D012825:Silicon