title: Electron transport at surfaces and interfaces.
abstract: Here we present two techniques which give insight on transport phenomena with atomic resolution. Ballistic electron emission microscopy is used to study the ballistic transport through layered heterogeneous systems. The measured ballistic fraction of the tunneling current provides information about lossless transport channels through metallic layers and organic adsorbates. The transport characteristics of Bi(111)/Si Schottky devices and the influence of the organic adsorbates perylene tetracaboxylic dianhydride acid and C(60) on the ballistic current are discussed. Scanning tunneling potentiometry gives access to the lateral transport along a surface, thus scattering processes within two-dimensional electron systems for the Bi(111) surface and the Si(111)(√3 × √3)-Ag surface could be visualized.
authors.affiliation: University of Duisburg-Essen, Faculty of Physics and CeNIDE - Center for Nanointegration Duisburg-Essen, Lotharstr. 1, D-47048 Duisburg, Germany. christian.bobisch@uni-due.de
authors.forename: Christian A
authors.initials: CA
authors.lastname: Bobisch
authors.forename: Rolf
authors.initials: R
authors.lastname: Möller
mesh_terms: D000327:Adsorption; D001729:Bismuth / Q000737:chemistry*; D004579:Electron Transport; D037741:Fullerenes / Q000737:chemistry*; D016252:Microscopy, Scanning Tunneling; D010316:Particle Size; D010569:Perylene / Q000031:analogs & derivatives / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry*; D012834:Silver / Q000737:chemistry; D013499:Surface Properties
chemical_list: D037741:Fullerenes; D012834:Silver; D010569:Perylene; C069837:fullerene C60; D001729:Bismuth; D012825:Silicon