title: Quantized four-terminal resistances in a ferromagnetic graphene p-n junction.
abstract: The quantum Hall and longitudinal resistances in four-terminal ferromagnetic graphene p-n junctions under a perpendicular magnetic field are investigated. In the Hall measurement, the transverse contacts are assumed to be located at the p-n interface to avoid the mixing of edge states at the interface and the resulting quantized resistances are then topologically protected. According to the charge carrier type, the resistances in a four-terminal p-n junction can be naturally divided into nine different regimes. The symmetric Hall and longitudinal resistances are observed, with many new robust quantum plateaus revealed due to the competition between spin splitting and local potentials.
authors.affiliation: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China.
authors.forename: Lei
authors.initials: L
authors.lastname: Xu
authors.forename: Jin
authors.initials: J
authors.lastname: An
authors.forename: Chang-De
authors.initials: CD
authors.lastname: Gong