title: Single polymer-based ternary electronic memory material and device.
abstract: A ternary polymer memory device based on a single polymer with on-chain Ir(III) complexes is fabricated by combining multiple memory mechanisms into one system. Excellent ternary memory performances-low reading, writing, and erasing voltages and good stability for all three states-are achieved.
authors.affiliation: Key Laboratory for Organic Electronics & Information Displays (KLOEID), Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210046, PR China.
authors.forename: Shu-Juan
authors.initials: SJ
authors.lastname: Liu
authors.forename: Peng
authors.initials: P
authors.lastname: Wang
authors.forename: Qiang
authors.initials: Q
authors.lastname: Zhao
authors.forename: Hui-Ying
authors.initials: HY
authors.lastname: Yang
authors.forename: Jenlt
authors.initials: J
authors.lastname: Wong
authors.forename: Hui-Bin
authors.initials: HB
authors.lastname: Sun
authors.forename: Xiao-Chen
authors.initials: XC
authors.lastname: Dong
authors.forename: Wen-Peng
authors.initials: WP
authors.lastname: Lin
authors.forename: Wei
authors.initials: W
authors.lastname: Huang
mesh_terms: D002227:Carbazoles / Q000737:chemistry; D056831:Coordination Complexes / Q000737:chemistry; D055664:Electrochemical Techniques; D011108:Polymers / Q000737:chemistry*; D012666:Semiconductors; D017971:Tin Compounds / Q000737:chemistry
chemical_list: D002227:Carbazoles; D056831:Coordination Complexes; D011108:Polymers; D017971:Tin Compounds; C109984:indium tin oxide