title: Ferroelectric nonvolatile nanowire memory circuit using a single ZnO nanowire and copolymer top layer.
authors.affiliation: Institute of Physics and Applied Physics, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Republic of Korea.
authors.forename: Young Tack
authors.initials: YT
authors.lastname: Lee
authors.forename: Pyo Jin
authors.initials: PJ
authors.lastname: Jeon
authors.forename: Kwang H
authors.initials: KH
authors.lastname: Lee
authors.forename: Ryong
authors.initials: R
authors.lastname: Ha
authors.forename: Heon-Jin
authors.initials: HJ
authors.lastname: Choi
authors.forename: Seongil
authors.initials: S
authors.lastname: Im
mesh_terms: D004553:Electric Conductivity; D004560:Electricity; D053770:Nanowires / Q000737:chemistry*; D011108:Polymers / Q000737:chemistry*; D014173:Transistors, Electronic; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D011108:Polymers; D015034:Zinc Oxide