title: Selected deposition of high-quality aluminum film by liquid process.
abstract: For generation of a fine aluminum pattern by conventional vacuum processing, it is necessary not only to use complex and costly instruments but also to perform an additional etching process, which may result in physical and chemical damage to the target film surface. Herein we report a simple solution process for the selected deposition of an Al pattern. Al is obtained from the decomposition of alane under dehydrogenation catalysis of a Pt nanocrystalline pattern on a substrate at ∼105-120 °C, while the self-decomposition of alane in solution is avoided in the presence of high-boiling-point amine. This deposited film generates Al crystals with a diameter of several hundred nanometers, following an epitaxial growth to a continual film. The obtained film shows high conductivity, with a resistivity close to that of bulk Al.
authors.affiliation: Green Devices Research Center, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1245, Japan. z-shen@jaist.ac.jp
authors.forename: Zhongrong
authors.initials: Z
authors.lastname: Shen
authors.forename: Yasuo
authors.initials: Y
authors.lastname: Matsuki
authors.forename: Tatsuya
authors.initials: T
authors.lastname: Shimoda