title: Spin dynamics and spin noise in the presence of randomly varying spin-orbit interaction in a semiconductor quantum wire.
abstract: Using ensemble Monte Carlo simulation, we have studied hot carrier spin dynamics and spin noise in a multi-subband GaAs quantum wire in the presence of a randomly  varying Rashba spin-orbit interaction. The random variation reduces the carrier ensemble's spin dephasing time due to the D'yakonov-Perel' mechanism, but otherwise makes no qualitative difference to the temporal spin relaxation characteristics. However, it makes a qualitative difference to the spatial spin relaxation characteristics which change from monotonic and smooth to non-monotonic and chaotic because of a complex interplay between carriers in different subbands. As far as spin fluctuation and spin noise are concerned, the random variation has no major effect except that the low-frequency noise power spectral density increases slightly when the magnitude of the Rashba spin-orbit interaction field is varied randomly while holding the direction constant.
authors.affiliation: Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284, USA.
authors.forename: Pratik
authors.initials: P
authors.lastname: Agnihotri
authors.forename: Supriyo
authors.initials: S
authors.lastname: Bandyopadhyay
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D003198:Computer Simulation; D004553:Electric Conductivity; D004579:Electron Transport; D005708:Gallium / Q000737:chemistry*; D008956:Models, Chemical; D015233:Models, Statistical; D043942:Nanotubes / Q000737:chemistry*; D012666:Semiconductors; D013113:Spin Labels
chemical_list: D001152:Arsenicals; D013113:Spin Labels; C043055:gallium arsenide; D005708:Gallium