title: Superradiance dynamics in semiconductor laser diode structures.
abstract: We analyze theoretically the superradiant emission (SR) in semiconductor edge-emitting laser heterostructures using InGaN/GaN heterostructure quantum well (QW) as a model system. The generation of superradiant pulses as short as 500 fs at peak powers of over 200 W has been predicted for InGaN/GaN heterostructure QWs with the peak emission in the blue/violet wavelength range. Numerical simulations based on semiclassical traveling wave Maxwell-Bloch equations predict building up of macroscopic coherences in the ensemble of electrons and holes during SR pulse formation. We show that SR is covered by the Ginzburg-Landau equation for a phase transition to macroscopically coherent state of matter. The presented theory is applicable to other semiconductor materials.
authors.affiliation: Centre Suisse d’Electronique et de Microtechnique SA, 2002, Neuchâtel, Switzerland. dmitri.boiko@csem.ch
authors.forename: D L
authors.initials: DL
authors.lastname: Boiko
authors.forename: P P
authors.initials: PP
authors.lastname: Vasil'ev
mesh_terms: D003198:Computer Simulation; D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D054023:Lasers, Semiconductor; D008956:Models, Chemical; D045663:Quantum Dots
chemical_list: D007204:Indium; C473348:gallium nitride; D005708:Gallium; C513701:indium nitride