title: Transport properties of graphene nanoroads in boron nitride sheets.
abstract: We demonstrate that the one-dimensional (1D) transport channels that appear in the gap when graphene nanoroads are embedded in boron nitride (BN) sheets are more robust when they are inserted at AB/BA grain boundaries. Our conclusions are based on ab initio electronic structure calculations for a variety of different crystal orientations and bonding arrangements at the BN/C interfaces. This property is related to the valley Hall conductivity present in the BN band structure and to the topologically protected kink states that appear in continuum Dirac models with position-dependent masses.
authors.affiliation: Department of Physics, The University of Texas at Austin, Austin, Texas 78712, United States.
authors.forename: Jeil
authors.initials: J
authors.lastname: Jung
authors.forename: Zhenhua
authors.initials: Z
authors.lastname: Qiao
authors.forename: Qian
authors.initials: Q
authors.lastname: Niu
authors.forename: Allan H
authors.initials: AH
authors.lastname: Macdonald
mesh_terms: D001896:Boron Compounds / Q000737:chemistry*; D003198:Computer Simulation; D004579:Electron Transport; D006108:Graphite / Q000737:chemistry*; D008567:Membranes, Artificial; D008956:Models, Chemical; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*
chemical_list: D001896:Boron Compounds; D008567:Membranes, Artificial; C017282:boron nitride; D006108:Graphite