title: Large scale metal-free synthesis of graphene on sapphire and transfer-free device fabrication.
abstract: Metal catalyst-free growth of large scale single layer graphene film on a sapphire substrate by a chemical vapor deposition (CVD) process at 950 °C is demonstrated. A top-gated graphene field effect transistor (FET) device is successfully fabricated without any transfer process. The detailed growth process is investigated by the atomic force microscopy (AFM) studies.
authors.affiliation: Department of Chemistry and Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH) San 31, Hyoja-Dong, Nam-Gu, Pohang 790-784, Korea.
authors.forename: Hyun Jae
authors.initials: HJ
authors.lastname: Song
authors.forename: Minhyeok
authors.initials: M
authors.lastname: Son
authors.forename: Chibeom
authors.initials: C
authors.lastname: Park
authors.forename: Hyunseob
authors.initials: H
authors.lastname: Lim
authors.forename: Mark P
authors.initials: MP
authors.lastname: Levendorf
authors.forename: Adam W
authors.initials: AW
authors.lastname: Tsen
authors.forename: Jiwoong
authors.initials: J
authors.lastname: Park
authors.forename: Hee Cheul
authors.initials: HC
authors.lastname: Choi
mesh_terms: D000537:Aluminum Oxide / Q000737:chemistry*; D002384:Catalysis; D006108:Graphite / Q000138:chemical synthesis / Q000737:chemistry*; D008670:Metals / Q000737:chemistry; D018625:Microscopy, Atomic Force; D013499:Surface Properties; D014173:Transistors, Electronic
chemical_list: D008670:Metals; D006108:Graphite; D000537:Aluminum Oxide