title: Preparation methodologies and nano/microstructural evaluation of metal/semiconductor thin films.
abstract: Metal/semiconductor thin films are a class of unique materials that are widespread technological applications, particularly in the field of microelectronic devices. Assessment strategies of fractal and tures are of fundamental importance in the development of nano/microdevices. This review presents the preparation methodologies and nano/microstructural evaluation of metal/semiconductor thin films including Au/Ge bilayer films and Pd-Ge alloy thin films, which show in the form of fractals and nanocrystals. Firstly, the extended version of Au/Ge thin films for the fractal crystallization of amorphous Ge and the formation of nanocrystals developed with improved micro- and nanostructured features are described in Section 2. Secondly, the nano/microstructural characteristics of Pd/Ge alloy thin films during annealing have been investigated in detail and described in Section 3. Finally, we will draw the conclusions from the present work as shown in Section 4. It is expected that the preparation methodologies developed and the knowledge of nano/microstructural evolution gained in metal/semiconductor thin films, including Au/Ge bilayer films and Pd-Ge alloy thin films, will provide an important fundamental basis underpinning further interdisciplinary research in these fields such as physics, chemistry, materials science, and nanoscience and nanotechnology, leading to promising exciting opportunities for future technological applications involving these thin films.
authors.affiliation: Shanghai Applied Radiation Institute, School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444, People's Republic of China.
authors.forename: Zhiwen
authors.initials: Z
authors.lastname: Chen
authors.forename: Zheng
authors.initials: Z
authors.lastname: Jiao
authors.forename: Minghong
authors.initials: M
authors.lastname: Wu
authors.forename: Chan-Hung
authors.initials: CH
authors.lastname: Shek
authors.forename: C M Lawrence
authors.initials: CM
authors.lastname: Wu
authors.forename: Joseph K L
authors.initials: JK
authors.lastname: Lai
mesh_terms: D003460:Crystallization / Q000379:methods*; D008567:Membranes, Artificial; D008670:Metals / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012666:Semiconductors; D013499:Surface Properties
chemical_list: D008567:Membranes, Artificial; D008670:Metals