title: Piezotronic effect on the transport properties of GaN nanobelts for active flexible electronics.
abstract: The transport properties of GaN nanobelts (NBs) are tuned using a piezotronic effect when a compressive/tensile strain is applied on the GaN NB. This is mainly due to a change in Schottky barrier height (SBH). A theoretical model is proposed to explain the observed phenomenon.
authors.affiliation: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA.
authors.forename: Ruomeng
authors.initials: R
authors.lastname: Yu
authors.forename: Lin
authors.initials: L
authors.lastname: Dong
authors.forename: Caofeng
authors.initials: C
authors.lastname: Pan
authors.forename: Simiao
authors.initials: S
authors.lastname: Niu
authors.forename: Hongfei
authors.initials: H
authors.lastname: Liu
authors.forename: Wei
authors.initials: W
authors.lastname: Liu
authors.forename: Soojin
authors.initials: S
authors.lastname: Chua
authors.forename: Dongzhi
authors.initials: D
authors.lastname: Chi
authors.forename: Zhong Lin
authors.initials: ZL
authors.lastname: Wang
mesh_terms: D055615:Electrical Equipment and Supplies; D005708:Gallium / Q000737:chemistry*; D055595:Mechanical Phenomena; D008962:Models, Theoretical; D049329:Nanostructures
chemical_list: C473348:gallium nitride; D005708:Gallium