title: Quantification of electron-phonon scattering for determination of temperature variations at high spatial resolution in the transmission electron microscope.
abstract: This work investigates the quantification of electron-phonon thermal diffuse scattering (TDS) for detection of temperature variations with nanometer spatial resolution in transmission electron microscopy (TEM). Observations of TDS intensity for (100) single crystal Si and Ge show interdependences of temperature and sample thickness which can be understood through the angular distributions of electron-phonon scattering as a function of temperature. The temperature sensitivity of the integrated TDS intensity can be of the order of 10(-3) K(-1) for Si and Ge. This shows that measurement of the TDS intensity in the TEM is a promising means for nanoscale temperature measurement; our measurements to date have demonstrated that temperature changes as small as 5 K are detectable.
authors.affiliation: Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, USA. hel4@rpi.edu
authors.forename: Li
authors.initials: L
authors.lastname: He
authors.forename: Robert
authors.initials: R
authors.lastname: Hull
mesh_terms: D000465:Algorithms; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007089:Image Enhancement / Q000295:instrumentation* / Q000379:methods; D046529:Microscopy, Electron, Transmission / Q000295:instrumentation* / Q000379:methods; D060739:Phonons; D012542:Scattering, Radiation; D013696:Temperature; D013817:Thermography / Q000295:instrumentation* / Q000379:methods