title: Fabrication and properties of ITO films treated by excited atomic oxygen.
abstract: We consider the crystallization of ITO films induced by excited atomic oxygen. Owing to it, transmittance of these films in visible ranges increased by ~20% and surface impedance dropped from 36 down to 4.6Ω/□. The treatment temperature (127 °C) was significantly below that of conventional crystallization (320 °C). Application of elastic light scattering diagnostics shows that rms surface roughness increased from 2.65 nm up to 4.07 nm after film treatment. ITO treatment does not change isotropic azimuthal structure of the surface.
authors.affiliation: Institute of Semiconductor Physics, NAS of Ukraine, Kiev, Ukraine. vstrlgv@gmail.com
authors.forename: Valeriy A
authors.initials: VA
authors.lastname: Sterligov
authors.forename: Evgeny V
authors.initials: EV
authors.lastname: Shun'ko
authors.forename: Iaroslav O
authors.initials: IO
authors.lastname: Grytsaienko
authors.forename: Leonid V
authors.initials: LV
authors.lastname: Poperenko