title: Multistate memory devices based on free-standing VO2/TiO2 microstructures driven by Joule self-heating.
abstract: Two-terminal multistate memory elements based on VO(2)/TiO(2) thin film microcantilevers are reported. Volatile and non-volatile multiple resistance states are programmed by current pulses at temperatures within the hysteretic region of the metal-insulator transition of VO(2). The memory mechanism is based on current-induced creation of metallic clusters by self-heating of micrometric suspended regions and resistive reading via percolation.
authors.affiliation: CNR-SPIN, Corso Perrone 24, Genova, 16152, Italy. luca.pellegrino@spin.cnr.it
authors.forename: Luca
authors.initials: L
authors.lastname: Pellegrino
authors.forename: Nicola
authors.initials: N
authors.lastname: Manca
authors.forename: Teruo
authors.initials: T
authors.lastname: Kanki
authors.forename: Hidekazu
authors.initials: H
authors.lastname: Tanaka
authors.forename: Michele
authors.initials: M
authors.lastname: Biasotti
authors.forename: Emilio
authors.initials: E
authors.lastname: Bellingeri
authors.forename: Antonio Sergio
authors.initials: AS
authors.lastname: Siri
authors.forename: Daniele
authors.initials: D
authors.lastname: Marré
mesh_terms: D004553:Electric Conductivity; D012666:Semiconductors; D013696:Temperature; D014025:Titanium / Q000737:chemistry*; D017968:Vanadium Compounds / Q000737:chemistry*
chemical_list: D017968:Vanadium Compounds; C009495:titanium dioxide; D014025:Titanium