title: High performance of InGaN light-emitting diodes by air-gap/GaN distributed Bragg reflectors.
abstract: The effect of air-gap/GaN DBR structure, fabricated by selective lateral wet-etching, on InGaN light-emitting diodes (LEDs) is investigated. The air-gap/GaN DBR structures in LED acts as a light reflector, and thereby improve the light output power due to the redirection of light into escape cones on both front and back sides of the LED. At an injection current of 20 mA, the enhancement in the radiometric power as high as 1.91 times as compared to a conventional LED having no DBR structure and a far-field angle as low as 128.2° are realized with air-gap/GaN DBR structures.
authors.affiliation: Semiconductor Physics Research Center, School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju 561-756, South Korea.
authors.forename: Jae Hyoung
authors.initials: JH
authors.lastname: Ryu
authors.forename: Hee Yun
authors.initials: HY
authors.lastname: Kim
authors.forename: Hyun Kyu
authors.initials: HK
authors.lastname: Kim
authors.forename: Yashpal Singh
authors.initials: YS
authors.lastname: Katharria
authors.forename: Nam
authors.initials: N
authors.lastname: Han
authors.forename: Ji Hye
authors.initials: JH
authors.lastname: Kang
authors.forename: Young Jae
authors.initials: YJ
authors.lastname: Park
authors.forename: Min
authors.initials: M
authors.lastname: Han
authors.forename: Beo Deul
authors.initials: BD
authors.lastname: Ryu
authors.forename: Kang Bok
authors.initials: KB
authors.lastname: Ko
authors.forename: Eun-Kyoung
authors.initials: EK
authors.lastname: Suh
authors.forename: Chang-Hee
authors.initials: CH
authors.lastname: Hong
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008029:Lighting / Q000295:instrumentation*; D045663:Quantum Dots; D012031:Refractometry / Q000295:instrumentation*; D012666:Semiconductors
chemical_list: D007204:Indium; C473348:gallium nitride; D005708:Gallium; C513701:indium nitride