title: Few electron limit of n-type metal oxide  semiconductor single electron transistors.
abstract: We report the electronic transport on n-type silicon single electron transistors (SETs) fabricated in complementary metal oxide semiconductor (CMOS) technology. The n-type metal oxide silicon SETs (n-MOSSETs) are built within a pre-industrial fully depleted silicon on insulator (FDSOI) technology with a silicon thickness down to 10 nm on 200 mm wafers. The nominal channel size of 20 × 20 nm(2) is obtained by employing electron beam lithography for active and gate level patterning. The Coulomb blockade stability diagram is precisely resolved at 4.2 K and it exhibits large addition energies of tens of meV. The confinement of the electrons in the quantum dot has been modeled by using a current spin density functional theory (CS-DFT) method. CMOS technology enables massive production of SETs for ultimate nanoelectronic and quantum variable based devices.
authors.affiliation: Laboratorio MDM, CNR-IMM, Via Olivetti 2, I-20864 Agrate Brianza, Italy. enrico.prati@cnr.it
authors.forename: Enrico
authors.initials: E
authors.lastname: Prati
authors.forename: Marco
authors.initials: M
authors.lastname: De Michielis
authors.forename: Matteo
authors.initials: M
authors.lastname: Belli
authors.forename: Simone
authors.initials: S
authors.lastname: Cocco
authors.forename: Marco
authors.initials: M
authors.lastname: Fanciulli
authors.forename: Dharmraj
authors.initials: D
authors.lastname: Kotekar-Patil
authors.forename: Matthias
authors.initials: M
authors.lastname: Ruoff
authors.forename: Dieter P
authors.initials: DP
authors.lastname: Kern
authors.forename: David A
authors.initials: DA
authors.lastname: Wharam
authors.forename: Jan
authors.initials: J
authors.lastname: Verduijn
authors.forename: Giuseppe C
authors.initials: GC
authors.lastname: Tettamanzi
authors.forename: Sven
authors.initials: S
authors.lastname: Rogge
authors.forename: Benoit
authors.initials: B
authors.lastname: Roche
authors.forename: Romain
authors.initials: R
authors.lastname: Wacquez
authors.forename: Xavier
authors.initials: X
authors.lastname: Jehl
authors.forename: Maud
authors.initials: M
authors.lastname: Vinet
authors.forename: Marc
authors.initials: M
authors.lastname: Sanquer
mesh_terms: D004579:Electron Transport; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008670:Metals / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000295:instrumentation*; D010316:Particle Size; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D008670:Metals; D012825:Silicon