title: Strong tuning of Rashba spin-orbit interaction in single InAs nanowires.
abstract: A key concept in the emerging field of spintronics is the gate voltage or electric field control of spin precession via the effective magnetic field generated by the Rashba spin-orbit interaction. Here, we demonstrate the generation and tuning of electric field induced Rashba spin-orbit interaction in InAs nanowires where a strong electric field is created by either a double gate or a solid electrolyte surrounding gate. In particular, the electrolyte gating enables 6-fold tuning of Rashba coefficient and nearly 3 orders of magnitude tuning of spin relaxation time within only 1 V of gate bias. Such a dramatic tuning of spin-orbit interaction in nanowires may have implications in nanowire-based spintronic devices.
authors.affiliation: Department of Physics, Case Western Reserve University , Cleveland, Ohio 44106, United States.
authors.forename: Dong
authors.initials: D
authors.lastname: Liang
authors.forename: Xuan P A
authors.initials: XP
authors.lastname: Gao
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D003198:Computer Simulation; D007204:Indium / Q000737:chemistry*; D008956:Models, Chemical; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D013113:Spin Labels
chemical_list: D001152:Arsenicals; D013113:Spin Labels; D007204:Indium; C076773:indium arsenide