title: Electron transport in SiGe alloy nanowires in the ballistic regime from first-principles.
abstract: Silicon-germanium alloying is emerging as one of the most promising strategies to engineer heat transport at the nanoscale. Here, we perform first-principles electron transport calculations to assess at what extent such approach can be followed without worsening the electrical conduction properties of the system, providing then a path toward high-efficiency thermoelectric materials.
authors.affiliation: Dipartimento di Scienze e Metodi dell'Ingegneria, Centro Interdipartimentale En&Tech, Universitá di Modena e Reggio Emilia, Via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia, Italy.
authors.forename: Michele
authors.initials: M
authors.lastname: Amato
authors.forename: Stefano
authors.initials: S
authors.lastname: Ossicini
authors.forename: Riccardo
authors.initials: R
authors.lastname: Rurali
mesh_terms: D000497:Alloys / Q000737:chemistry*; D003198:Computer Simulation; D004579:Electron Transport; D005857:Germanium / Q000737:chemistry*; D008956:Models, Chemical; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D012825:Silicon / Q000737:chemistry*
chemical_list: D000497:Alloys; D005857:Germanium; D012825:Silicon