title: Selective Purcell enhancement of defect emission in ZnO thin films.
abstract: A zinc interstitial defect present but unobservable in ZnO thin films annealed at 500 °C in oxygen or in atmosphere was selectively detected by interaction of the film with an Ag surface-plasmon polariton. The time-dependent differential reflectivity of the ZnO near the ZnO/MgO interface exhibited a subpicosecond decay followed by a several nanosecond recovery, consistent with the Purcell-enhanced Zn interstitial luminescence seen in Ag-ZnO heterostructures. Heterostructures annealed at other temperatures showed significantly greater band-edge photoluminescence and no evidence of the Zn interstitial defect.
authors.affiliation: Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA. lawriebj@ornl.gov
authors.forename: B J
authors.initials: BJ
authors.lastname: Lawrie
authors.forename: R
authors.initials: R
authors.lastname: Mu
authors.forename: R F
authors.initials: RF
authors.lastname: Haglund