title: Passive InP regenerator integrated on SOI for the support of broadband silicon modulators.
abstract: Passive signal regeneration based on the Membrane InP Switch (MIPS) is demonstrated. Because of the high confinement of light in the active region of the MIPS, the device acts as a saturable absorber with a highly non-linear response. Using this effect, the extinction ratio (ER) of low-ER signals can be tripled and a receiver sensitivity enhancement of 4.5dB is demonstrated using an input signal at 1Gb/s with an ER of 2dB. Regenerator operation up to 5Gb/s is demonstrated and using a device simulator a strategy to reach higher bitrate operation is proposed.
authors.affiliation: Photonics Research Group-Ghent University/imec, Gent, Belgium. martijn.tassaert@intec.ugent.be
authors.forename: M
authors.initials: M
authors.lastname: Tassaert
authors.forename: H J S
authors.initials: HJ
authors.lastname: Dorren
authors.forename: G
authors.initials: G
authors.lastname: Roelkens
authors.forename: O
authors.initials: O
authors.lastname: Raz