title: Fabrication of a self-aligned cross-wire quantum-dot chain light emitting diode by molecular beam epitaxial regrowth.
abstract: The fabrication of a cross-wire p-i-n light emitting diode (LED) by molecular beam epitaxial overgrowth on mesa-patterned GaAs(100) substrates is presented. Micron-wide mesa stripes fabricated by standard photolithography are subsequently narrowed to sub-micron dimensions by GaAs overgrowth due to net migration towards the mesa top. Chains of InAs quantum dots (QDs) can then be grown in a self-aligned manner on top of the narrow GaAs ridge mesa, forming the active region of the QD-chain LED. The kinetics of the overgrowth is discussed and the electroluminescence operation of the LED is presented.
authors.affiliation: Department of Pure and Applied Chemistry, University of Calabar, PMB 1115, Calabar, Nigeria. Cavendish Laboratory, University of Cambridge, J J Thomson Avenue, Cambridge, CB3 0HE, UK.
authors.forename: M E
authors.initials: ME
authors.lastname: Ikpi
authors.forename: P
authors.initials: P
authors.lastname: Atkinson
authors.forename: S P
authors.initials: SP
authors.lastname: Bremner
authors.forename: D A
authors.initials: DA
authors.lastname: Ritchie