title: Enhanced optical bistability from self-heating due to free carrier absorption in substrate removed silicon ring modulators.
abstract: We show enhanced optical bistability induced by free carrier absorption from junction doping in substrate-removed silicon ring modulators. Such linear thermal effects dominate the loss in high-speed depletion silicon ring modulators. Optical bistability was observed with about 100 μW of input optical power. We further show that such thermal interactions causes data-dependent ring resonance shifts, and consequently severely degrade the data modulation quality at low speeds. The frequency response of this effect was measured to be about 100~200 kHz.
authors.affiliation: Oracle Labs, 9515 Towne Centre Drive, San Diego, CA 92121, USA. xuezhe.zheng@oracle.com
authors.forename: Xuezhe
authors.initials: X
authors.lastname: Zheng
authors.forename: Ying
authors.initials: Y
authors.lastname: Luo
authors.forename: Guoliang
authors.initials: G
authors.lastname: Li
authors.forename: Ivan
authors.initials: I
authors.lastname: Shubin
authors.forename: Hiren
authors.initials: H
authors.lastname: Thacker
authors.forename: Jin
authors.initials: J
authors.lastname: Yao
authors.forename: Kannan
authors.initials: K
authors.lastname: Raj
authors.forename: John E
authors.initials: JE
authors.lastname: Cunningham
authors.forename: Ashok V
authors.initials: AV
authors.lastname: Krishnamoorthy