title: Polarized recombination of acoustically transported carriers in GaAs nanowires.
abstract: : The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoexcited electrons and holes in GaAs nanowires deposited on a SAW delay line on a LiNbO3 crystal. The carriers generated in the nanowire by a focused light spot are acoustically transferred to a second location where they recombine. We show that the recombination of the transported carriers occurs in a zinc blende section on top of the predominant wurtzite nanowire. This allows contactless control of the linear polarized emission by SAWs which is governed by the crystal structure. Additional polarization-resolved photoluminescence measurements were performed to investigate spin conservation during transport.
authors.affiliation: Materials Science Institute, University of Valencia, Paterna 46980, Catedrático José Beltrán 2, Spain. michael.moeller@uv.es.
authors.forename: Michael
authors.initials: M
authors.lastname: Möller
authors.forename: Alberto
authors.initials: A
authors.lastname: Hernández-Mínguez
authors.forename: Steffen
authors.initials: S
authors.lastname: Breuer
authors.forename: Carsten
authors.initials: C
authors.lastname: Pfüller
authors.forename: Oliver
authors.initials: O
authors.lastname: Brandt
authors.forename: Mauricio M
authors.initials: MM
authors.lastname: de Lima
authors.forename: Andrés
authors.initials: A
authors.lastname: Cantarero
authors.forename: Lutz
authors.initials: L
authors.lastname: Geelhaar
authors.forename: Henning
authors.initials: H
authors.lastname: Riechert
authors.forename: Paulo V
authors.initials: PV
authors.lastname: Santos