title: State-of-the-art graphene high-frequency electronics.
abstract: High-performance graphene transistors for radio frequency applications have received much attention and significant progress has been achieved. However, devices based on large-area synthetic graphene, which have direct technological relevance, are still typically outperformed by those based on mechanically exfoliated graphene. Here, we report devices with intrinsic cutoff frequency above 300 GHz, based on both wafer-scale CVD grown graphene and epitaxial graphene on SiC, thus surpassing previous records on any graphene material. We also demonstrate devices with optimized architecture exhibiting voltage and power gains reaching 20 dB and a wafer-scale integrated graphene amplifier circuit with voltage amplification.
authors.affiliation: IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, United States. ywu@us.ibm.com
authors.forename: Yanqing
authors.initials: Y
authors.lastname: Wu
authors.forename: Keith A
authors.initials: KA
authors.lastname: Jenkins
authors.forename: Alberto
authors.initials: A
authors.lastname: Valdes-Garcia
authors.forename: Damon B
authors.initials: DB
authors.lastname: Farmer
authors.forename: Yu
authors.initials: Y
authors.lastname: Zhu
authors.forename: Ageeth A
authors.initials: AA
authors.lastname: Bol
authors.forename: Christos
authors.initials: C
authors.lastname: Dimitrakopoulos
authors.forename: Wenjuan
authors.initials: W
authors.lastname: Zhu
authors.forename: Fengnian
authors.initials: F
authors.lastname: Xia
authors.forename: Phaedon
authors.initials: P
authors.lastname: Avouris
authors.forename: Yu-Ming
authors.initials: YM
authors.lastname: Lin
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D006108:Graphite / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000295:instrumentation*; D010316:Particle Size; D014173:Transistors, Electronic
chemical_list: D006108:Graphite