title: Back-to-back Schottky diodes: the generalization of the diode theory in analysis and extraction of electrical parameters of nanodevices.
abstract: We report on the analysis of nonlinear current-voltage characteristics exhibited by a set of blocking metal/SnO(2)/metal. Schottky barrier heights in both  interfaces were independently extracted and their dependence on the metal work function was analyzed. The disorder-induced interface states effectively pinned the Fermi level at the SnO(2) surface, leading to the observed Schottky barriers. The model is useful for any two-terminal device which cannot be described by a conventional diode configuration.
authors.affiliation: NanO LaB-Departamento de Física, Universidade Federal de São Carlos, São Carlos, São Paulo, Brazil. chiquito@df.ufscar.br
authors.forename: Adenilson J
authors.initials: AJ
authors.lastname: Chiquito
authors.forename: Cleber A
authors.initials: CA
authors.lastname: Amorim
authors.forename: Olivia M
authors.initials: OM
authors.lastname: Berengue
authors.forename: Luana S
authors.initials: LS
authors.lastname: Araujo
authors.forename: Eric P
authors.initials: EP
authors.lastname: Bernardo
authors.forename: Edson R
authors.initials: ER
authors.lastname: Leite