title: 40 Gbit/s low-loss silicon optical modulator based on a pipin diode.
abstract: 40 Gbit/s low-loss silicon optical modulators are demonstrated. The devices are based on the carrier depletion effect in a pipin diode to generate a good compromise between high efficiency, speed and low optical loss. The diode is embedded in a Mach-Zehnder interferometer, and a self-aligned fabrication process was used to obtain precise localization of the active p-doped region in the middle of the waveguide. Using a 4.7 mm (resp. 0.95 mm) long phase shifter, the modulator exhibits an extinction ratio of 6.6 dB (resp. 3.2 dB), simultaneously with an optical loss of 6 dB (resp. 4.5 dB) at the same operating point.
authors.affiliation: Institut d'Electronique Fondamentale, Université Paris-Sud, CNRS UMR 8622, Orsay, France.
authors.forename: Melissa
authors.initials: M
authors.lastname: Ziebell
authors.forename: Delphine
authors.initials: D
authors.lastname: Marris-Morini
authors.forename: Gilles
authors.initials: G
authors.lastname: Rasigade
authors.forename: Jean-Marc
authors.initials: JM
authors.lastname: Fédéli
authors.forename: Paul
authors.initials: P
authors.lastname: Crozat
authors.forename: Eric
authors.initials: E
authors.lastname: Cassan
authors.forename: David
authors.initials: D
authors.lastname: Bouville
authors.forename: Laurent
authors.initials: L
authors.lastname: Vivien
mesh_terms: D001703:Biophysics / Q000379:methods; D003196:Computer Graphics; D004581:Electronics / Q000295:instrumentation; D004867:Equipment Design; D007368:Interferometry / Q000295:instrumentation* / Q000379:methods; D008027:Light; D055096:Optical Devices; D055095:Optics and Photonics / Q000379:methods; D015203:Reproducibility of Results; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation; D012825:Silicon / Q000737:chemistry*; D013685:Telecommunications; D014584:User-Computer Interface
chemical_list: D012825:Silicon