title: Nanowelding of carbon nanotube-metal contacts: an effective way to control the Schottky barrier and performance of carbon nanotube based field effect transistors.
abstract: Schottky barriers formed at carbon nanotube (CNT)-metal contacts have been well known to be crucial for the performance of CNT based field effect transistors (FETs). Through first principles calculations we show that a nanowelding process can drastically reduce the Schottky barriers at CNT-metal interfaces, resulting in significantly improved conductivity of CNT-based FETs. The proposed nanowelding can be realized by either laser local heating or a heating process via a controllable pulse current. Results presented in this paper may have great implications in future design and applications of CNT-based electronics.
authors.affiliation: Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore.
authors.forename: Argo
authors.initials: A
authors.lastname: Nurbawono
authors.forename: Aihua
authors.initials: A
authors.lastname: Zhang
authors.forename: Yongqing
authors.initials: Y
authors.lastname: Cai
authors.forename: Yihong
authors.initials: Y
authors.lastname: Wu
authors.forename: Yuan Ping
authors.initials: YP
authors.lastname: Feng
authors.forename: Chun
authors.initials: C
authors.lastname: Zhang