title: Silicon nanowires prepared by electron beam evaporation in ultrahigh vacuum.
abstract: One-dimensional silicon nanowires (SiNWs) were prepared by electron beam evaporation in ultrahigh vacuum (UHV). The SiNWs can be grown through either vapor-liquid-solid (VLS) or oxide-assisted growth (OAG) mechanism. In VLS growth, SiNWs can be formed on Si surface, not on SiO2 surfaces. Moreover, low deposition rate is helpful for producing lateral SiNWs by VLS. But in OAG process, SiNWs can be grown on SiO2 surfaces, not on Si surfaces. This work reveals the methods of producing large-scale SiNWs in UHV.
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, People's Republic of China. xdxu@uestc.edu.cn.
authors.forename: Xiangdong
authors.initials: X
authors.lastname: Xu
authors.forename: Shibin
authors.initials: S
authors.lastname: Li
authors.forename: Yinchuan
authors.initials: Y
authors.lastname: Wang
authors.forename: Taijun
authors.initials: T
authors.lastname: Fan
authors.forename: Yadong
authors.initials: Y
authors.lastname: Jiang
authors.forename: Long
authors.initials: L
authors.lastname: Huang
authors.forename: Qiong
authors.initials: Q
authors.lastname: He
authors.forename: Tianhong
authors.initials: T
authors.lastname: Ao