title: 310 GHz gain-bandwidth product Ge/Si avalanche photodetector for 1550 nm light detection.
abstract: We report a normal incidence Ge/Si avalanche photodiode with separate-absorption-charge-multiplication (SACM) structure by selective epitaxial growth. By proper design of charge and multiplication layers and by optimizing the electric field distribution in the depletion region to eliminate germanium impact-ionization at high gain, a high responsivity of 12 A/W and a large gain-bandwidth product of 310 GHz have been achieved at 1550 nm.
authors.affiliation: Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore, Singapore. duann@ime.a-star.edu.sg
authors.forename: Ning
authors.initials: N
authors.lastname: Duan
authors.forename: Tsung-Yang
authors.initials: TY
authors.lastname: Liow
authors.forename: Andy Eu-Jin
authors.initials: AE
authors.lastname: Lim
authors.forename: Liang
authors.initials: L
authors.lastname: Ding
authors.forename: G Q
authors.initials: GQ
authors.lastname: Lo