title: High efficiency graphene solar cells by chemical doping.
abstract: We demonstrate single layer graphene/n-Si Schottky junction solar cells that under AM1.5 illumination exhibit a power conversion efficiency (PCE) of 8.6%. This performance, achieved by doping the graphene with bis(trifluoromethanesulfonyl)amide, exceeds the native (undoped) device performance by a factor of 4.5 and is the highest PCE reported for graphene-based solar cells to date. Current-voltage, capacitance-voltage, and external quantum efficiency measurements show the enhancement to be due to the doping-induced shift in the graphene chemical potential that increases the graphene carrier density (decreasing the cell series resistance) and increases the cell's built-in potential (increasing the open circuit voltage) both of which improve the solar cell fill factor.
authors.affiliation: Department of Physics, University of Florida, Gainesville, Florida 32611, United States.
authors.forename: Xiaochang
authors.initials: X
authors.lastname: Miao
authors.forename: Sefaattin
authors.initials: S
authors.lastname: Tongay
authors.forename: Maureen K
authors.initials: MK
authors.lastname: Petterson
authors.forename: Kara
authors.initials: K
authors.lastname: Berke
authors.forename: Andrew G
authors.initials: AG
authors.lastname: Rinzler
authors.forename: Bill R
authors.initials: BR
authors.lastname: Appleton
authors.forename: Arthur F
authors.initials: AF
authors.lastname: Hebard
mesh_terms: D011211:Electric Power Supplies; D004735:Energy Transfer; D004867:Equipment Design; D019544:Equipment Failure Analysis; D006108:Graphite / Q000737:chemistry*; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*; D012993:Solar Energy
chemical_list: D006108:Graphite; D012825:Silicon