title: CMOS Image Sensor with a Built-in Lane Detector.
abstract: This work develops a new current-mode mixed signal Complementary Metal-Oxide-Semiconductor (CMOS) imager, which can capture images and simultaneously produce vehicle lane maps. The adopted lane detection algorithm, which was modified to be compatible with hardware requirements, can achieve a high recognition rate of up to approximately 96% under various weather conditions. Instead of a Personal Computer (PC) based system or embedded platform system equipped with expensive high performance chip of Reduced Instruction Set Computer (RISC) or Digital Signal Processor (DSP), the proposed imager, without extra Analog to Digital Converter (ADC) circuits to transform signals, is a compact, lower cost key-component chip. It is also an innovative component device that can be integrated into intelligent automotive lane departure systems. The chip size is 2,191.4 × 2,389.8 μm, and the package uses 40 pin Dual-In-Package (DIP). The pixel cell size is 18.45 × 21.8 μm and the core size of photodiode is 12.45 × 9.6 μm; the resulting fill factor is 29.7%.
authors.affiliation: Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung, Taiwan, ROC.
authors.forename: Pei-Yung
authors.initials: PY
authors.lastname: Hsiao
authors.forename: Hsien-Chein
authors.initials: HC
authors.lastname: Cheng
authors.forename: Shih-Shinh
authors.initials: SS
authors.lastname: Huang
authors.forename: Li-Chen
authors.initials: LC
authors.lastname: Fu