title: High on/off ratio p-type field-effect transistor enabled by a single heavily Al-doped α-Si3N4 nanowire.
abstract: For the first time, we fabricated p-type FETs using an individual heavily Al-doped α-Si3N4 NW with a single-crystal structure. The results show that despite a heavy Al-doping level, a typical device still exhibits high performance with an extremely high on/off ratio, 10(3), at Vds = -5 V.
authors.affiliation: College of Physics Science, Qingdao University, Qingdao, 266071, P. R. China. chen-yq06@mails.tsinghua.edu.cn
authors.forename: Youqiang
authors.initials: Y
authors.lastname: Chen
authors.forename: Xinni
authors.initials: X
authors.lastname: Zhang
authors.forename: Qing
authors.initials: Q
authors.lastname: Zhao
authors.forename: Li
authors.initials: L
authors.lastname: He
authors.forename: Zhipeng
authors.initials: Z
authors.lastname: Xie
authors.forename: Huatao
authors.initials: H
authors.lastname: Wang