title: An electrically pumped germanium laser.
abstract: Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated. Room temperature multimode laser with 1mW output power is measured. Phosphorous doping in Germanium at a concentration over 4x1019cm-3is achieved. A Germanium gain spectrum of nearly 200nm is observed.
authors.affiliation: Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
authors.forename: Rodolfo E
authors.initials: RE
authors.lastname: Camacho-Aguilera
authors.forename: Yan
authors.initials: Y
authors.lastname: Cai
authors.forename: Neil
authors.initials: N
authors.lastname: Patel
authors.forename: Jonathan T
authors.initials: JT
authors.lastname: Bessette
authors.forename: Marco
authors.initials: M
authors.lastname: Romagnoli
authors.forename: Lionel C
authors.initials: LC
authors.lastname: Kimerling
authors.forename: Jurgen
authors.initials: J
authors.lastname: Michel