title: Compensating poly(3-hexylthiophene) reveals its doping density and its strong exciton quenching by free carriers.
abstract: Adding increasing quantities of an n-type compensating dopant, cobaltocene, to poly(3-hexylthiophene) reveals an almost perfect mirror symmetry between the conductivity and the luminescence intensity. The sharp minimum/maximum shows that the uncompensated p-type doping density is 1.2 × 10(18) cm(-3) and that excitons are strongly quenched by free charge carriers, not by bound charges.
authors.affiliation: National Renewable Energy Laboratory, Golden, CO 80401, USA. ziqi.liang@nrel.gov
authors.forename: Ziqi
authors.initials: Z
authors.lastname: Liang
authors.forename: Brian A
authors.initials: BA
authors.lastname: Gregg
mesh_terms: D004553:Electric Conductivity; D004583:Electrons; D012666:Semiconductors; D013876:Thiophenes / Q000737:chemistry*
chemical_list: D013876:Thiophenes; C507295:poly(3-hexylthiophene)