title: Gallium nitride nanowire based nanogenerators and light-emitting diodes.
abstract: Single-crystal n-type GaN nanowires have been grown epitaxially on a Mg-doped p-type GaN substrate. Piezoelectric nanognerators based on GaN nanowires are investigated by conductive AFM, and the results showed an output power density of nearly 12.5 mW/m(2). Luminous LED modules based on n-GaN nanowires/p-GaN substrate have been fabricated. CCD images of the lighted LED and the corresponding electroluminescence spectra are recorded at a forward bias. Moreover, the GaN nanowire LED can be lighted up by the power provided by a ZnO nanowire based nanogenerator, demonstrating a self-powered LED using wurtzite-structured nanomaterials.
authors.affiliation: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia, USA.
authors.forename: Chih-Yen
authors.initials: CY
authors.lastname: Chen
authors.forename: Guang
authors.initials: G
authors.lastname: Zhu
authors.forename: Youfan
authors.initials: Y
authors.lastname: Hu
authors.forename: Jeng-Wei
authors.initials: JW
authors.lastname: Yu
authors.forename: Jinghui
authors.initials: J
authors.lastname: Song
authors.forename: Kai-Yuan
authors.initials: KY
authors.lastname: Cheng
authors.forename: Lung-Han
authors.initials: LH
authors.lastname: Peng
authors.forename: Li-Jen
authors.initials: LJ
authors.lastname: Chou
authors.forename: Zhong Lin
authors.initials: ZL
authors.lastname: Wang
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D008029:Lighting / Q000295:instrumentation*; D008422:Materials Testing; D053758:Nanoparticles / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000295:instrumentation*; D010316:Particle Size; D012666:Semiconductors
chemical_list: C473348:gallium nitride; D005708:Gallium