title: Transparent nanoscale floating gate memory using self-assembled bismuth nanocrystals in Bi(2) Mg(2/3) Nb(4/3) O(7) (BMN) pyrochlore thin films grown at room temperature.
abstract: Bismuth nanocrystals for a nanoscale floating gate memory device are self-assembled in Bi(2) Mg(2/3) Nb(4/3) O(7)  (BMN) dielectric films grown at room temperature by radio-frequency sputtering. The TEM cross-sectional image shows the "real" structure grown on a Si (001) substrate. The image magnified from the dotted box (red color) in the the cross-sectional image clearly shows bismuth nanoparticles at the interface between the Al(2) O(3)  and HfO(2)  layer (right image). Nanoparticles approximately 3 nm in size are regularly distributed at the interface.
authors.affiliation: Department of Materials and Engineering, Chungnam National University, Daeduk Science Town, 305-764, Daejeon, Korea.
authors.forename: Hyun-June
authors.initials: HJ
authors.lastname: Jung
authors.forename: Soon-Gil
authors.initials: SG
authors.lastname: Yoon
authors.forename: Soon-Ku
authors.initials: SK
authors.lastname: Hong
authors.forename: Jeong-Yong
authors.initials: JY
authors.lastname: Lee
mesh_terms: D000537:Aluminum Oxide / Q000737:chemistry; D001729:Bismuth / Q000737:chemistry*; D003460:Crystallization; D006195:Hafnium / Q000737:chemistry; D017616:Magnesium Compounds / Q000737:chemistry*; D053768:Metal Nanoparticles / Q000737:chemistry*; D036103:Nanotechnology / Q000295:instrumentation*; D009556:Niobium / Q000737:chemistry*; D010087:Oxides / Q000737:chemistry; D012666:Semiconductors; D013696:Temperature
chemical_list: D017616:Magnesium Compounds; D010087:Oxides; D009556:Niobium; C016709:pyrochlore; C545179:hafnium oxide; D000537:Aluminum Oxide; D001729:Bismuth; D006195:Hafnium