title: Solution processed high performance pentacene thin-film transistors.
abstract: High performance thin-film transistors were fabricated using a new precursor of pentacene through a multiple spin-heat procedure. High quality pentacene thin films can be prepared by this method and hence a FET device can be made in a top-contact configuration. The device exhibited a remarkable field-effect mobility of 0.38 cm(2) V(-1) s(-1) with an on/off ratio of 10(6).
authors.affiliation: Department of Chemistry, National Taiwan Normal University, Ting-Chow Road, Taipei, 11677, Taiwan.
authors.forename: Ting-Han
authors.initials: TH
authors.lastname: Chao
authors.forename: Ming-Jen
authors.initials: MJ
authors.lastname: Chang
authors.forename: Motonori
authors.initials: M
authors.lastname: Watanabe
authors.forename: Ming-Hui
authors.initials: MH
authors.lastname: Luo
authors.forename: Yuan Jay
authors.initials: YJ
authors.lastname: Chang
authors.forename: Tzu-Chien
authors.initials: TC
authors.lastname: Fang
authors.forename: Kew-Yu
authors.initials: KY
authors.lastname: Chen
authors.forename: Tahsin J
authors.initials: TJ
authors.lastname: Chow