title: Development of Ohmic nanocontacts via surface modification for nanowire-based electronic and optoelectronic devices: ZnO nanowires as an example.
abstract: We demonstrated a nanocontacting scheme using a focus ion beam (FIB) system without further heat treatment for ZnO nanowires. This scheme includes Ga ion surface modification and direct-write Pt deposition induced by Ga ion, leading to an Ohmic nanocontact with a specific contact resistance as low as 2.5 × 10(-6)Ω cm(2). Temperature-dependent measurements show that the transport of the FIB-Pt contact on the ZnO nanowire with local surface modification is governed by field emission tunneling. Taking advantage of area-selected and room-temperature processes, Ga ion surface modification and direct-write Pt deposition using a FIB system demonstrates a feasible Ohmic scheme.
authors.affiliation: Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University, Taipei, 10617 Taiwan, ROC. jhhe@cc.ee.ntu.edu.tw
authors.forename: Jr-Hau
authors.initials: JH
authors.lastname: He
authors.forename: Jr-Jian
authors.initials: JJ
authors.lastname: Ke
authors.forename: Pei-Hsin
authors.initials: PH
authors.lastname: Chang
authors.forename: Kun-Tong
authors.initials: KT
authors.lastname: Tsai
authors.forename: P C
authors.initials: PC
authors.lastname: Yang
authors.forename: I-Min
authors.initials: IM
authors.lastname: Chan
mesh_terms: D004581:Electronics; D005708:Gallium / Q000737:chemistry; D053770:Nanowires / Q000737:chemistry* / Q000648:ultrastructure; D055096:Optical Devices; D013499:Surface Properties; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D005708:Gallium; D015034:Zinc Oxide