title: Anisotropic interface induced formation of Sb nanowires on GaSb(111)A substrates.
abstract: The growth of Sb nanowires on GaSb(111)A substrates is studied by in situ azimuthal scan reflection high-energy electron diffraction (ARHEED). Bulk and layer contributions can be distinguished in the ARHEED transmission pattern through the Sb nanowires. The three-dimensional structure of the growing Sb nanowires is identified by post-growth atomic force microscopy (AFM) and x-ray diffraction (XRD). The lattice match of the Sb crystal along the [Formula: see text] and the GaSb crystal along [Formula: see text] directions lead to a preferential orientation of the Sb nanowires. The Sb adsorption and desorption kinetics is studied by thermal desorption spectroscopy.
authors.affiliation: Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, Berlin, Germany. proessdorf@pdi-berlin.de
authors.forename: A
authors.initials: A
authors.lastname: Proessdorf
authors.forename: F
authors.initials: F
authors.lastname: Grosse
authors.forename: K
authors.initials: K
authors.lastname: Perumal
authors.forename: W
authors.initials: W
authors.lastname: Braun
authors.forename: H
authors.initials: H
authors.lastname: Riechert
mesh_terms: D016880:Anisotropy; D000965:Antimony / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D005708:Gallium / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D013499:Surface Properties
chemical_list: D046911:Macromolecular Substances; D000965:Antimony; D005708:Gallium