title: Can commonly used hydrazine produce n-type graphene?
abstract: A simple chemical method to obtain bulk quantities of N-doped, reduced graphene oxide (rGO) sheets (see figure) as an n-type semiconductor through the treatment of as-prepared GO sheets with the commonly used reducing reagent hydrazine, followed by rapid thermal annealing (RTA) is described.
authors.affiliation: NCRI, Center for Smart Molecular Memory, Department of Chemistry, Sungkyunkwan University, Suwon 440-746, Republic of Korea.
authors.forename: Surajit
authors.initials: S
authors.lastname: Some
authors.forename: Prasenjit
authors.initials: P
authors.lastname: Bhunia
authors.forename: EunHee
authors.initials: E
authors.lastname: Hwang
authors.forename: Keunsik
authors.initials: K
authors.lastname: Lee
authors.forename: Yeoheung
authors.initials: Y
authors.lastname: Yoon
authors.forename: Sohyeon
authors.initials: S
authors.lastname: Seo
authors.forename: Hyoyoung
authors.initials: H
authors.lastname: Lee