title: Exploratory combustion synthesis: amorphous indium yttrium oxide for thin-film transistors.
abstract: We report the implementation of amorphous indium yttrium oxide (a-IYO) as a thin-film transistor (TFT) semiconductor. Amorphous and polycrystalline IYO films were grown via a low-temperature solution process utilizing exothermic "combustion" precursors. Precursor transformation and the IYO films were analyzed by differential thermal analysis, thermogravimetric analysis, X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, and optical transmission, which reveal efficient conversion to the metal oxide lattice and smooth, transparent films. a-IYO TFTs fabricated with a hybrid nanodielectric exhibit electron mobilities of 7.3 cm(2) V(-1) s(-1) (T(anneal) = 300 °C) and 5.0 cm(2) V(-1) s(-1) (T(anneal) = 250 °C) for 2 V operation.
authors.affiliation: Department of Chemistry and the Materials Research Center, Northwestern University, 2145 North Sheridan Road, Evanston, Illinois 60208, USA.
authors.forename: Jonathan W
authors.initials: JW
authors.lastname: Hennek
authors.forename: Myung-Gil
authors.initials: MG
authors.lastname: Kim
authors.forename: Mercouri G
authors.initials: MG
authors.lastname: Kanatzidis
authors.forename: Antonio
authors.initials: A
authors.lastname: Facchetti
authors.forename: Tobin J
authors.initials: TJ
authors.lastname: Marks