title: Multifunctional devices and logic gates with undoped silicon nanowires.
abstract: We report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and temperature-dependent measurements. The roles of the source/drain contacts and of the silicon channel could be independently evaluated and tuned. Wrap gates surrounding the silicide-silicon contact interfaces were proved to be effective in inducing a full suppression of the contact Schottky barriers, thereby enabling carrier injection down to liquid helium temperature. By independently tuning the effective Schottky barrier heights, a variety of reconfigurable device functionalities could be obtained. In particular, the same nanowire device could be configured to work as a Schottky barrier transistor, a Schottky diode, or a p-n diode with tunable polarities. This versatility was eventually exploited to realize a NAND logic gate with gain well above one.
authors.affiliation: SPSMS/LaTEQS, 38054 Grenoble Cedex 9, France.
authors.forename: Massimo
authors.initials: M
authors.lastname: Mongillo
authors.forename: Panayotis
authors.initials: P
authors.lastname: Spathis
authors.forename: Georgios
authors.initials: G
authors.lastname: Katsaros
authors.forename: Pascal
authors.initials: P
authors.lastname: Gentile
authors.forename: Silvano
authors.initials: S
authors.lastname: De Franceschi
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000295:instrumentation*; D012666:Semiconductors; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D012825:Silicon