title: Fabrication of flexible and vertical silicon nanowire electronics.
abstract: Vertical silicon nanowire (SiNW) array devices directly connected on both sides to metallic contacts were fabricated on various non-Si-based substrates (e.g., glass, plastics, and metal foils) in order to fully exploit the nanomaterial properties for final applications. The devices were realized with uniform length Ag-assisted electroless etched SiNW arrays that were detached from their fabrication substrate, typically Si wafers, reattached to arbitrary substrates, and formed with metallic contacts on both sides of the NW array. Electrical characterization of the SiNW array devices exhibits good current-voltage characteristics consistent with the SiNW morphology.
authors.affiliation: Department of Mechanical Engineering, Stanford University, Stanford, California 94305, United States.
authors.forename: Jeffrey M
authors.initials: JM
authors.lastname: Weisse
authors.forename: Chi Hwan
authors.initials: CH
authors.lastname: Lee
authors.forename: Dong Rip
authors.initials: DR
authors.lastname: Kim
authors.forename: Xiaolin
authors.initials: X
authors.lastname: Zheng
mesh_terms: D003460:Crystallization / Q000379:methods*; D004548:Elasticity; D004553:Electric Conductivity; D004581:Electronics / Q000295:instrumentation*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D046911:Macromolecular Substances; D012825:Silicon