title: VLS growth of alternating InAsP/InP heterostructure nanowires for multiple-quantum-dot structures.
abstract: We investigated the Au-assisted growth of alternating InAsP/InP heterostructures in wurtzite InP nanowires on InP(111)B substrates for constructing multiple-quantum-dot structures. Vertical InP nanowires without stacking faults were obtained at a high PH(3)/TMIn mole flow ratio of 300-1000. We found that the growth rate changed largely when approximately 40 min passed. Ten InAsP layers were inserted in the InP nanowire, and it was found that both the InP growth rate and the background As level increased after the As supply. We also grew the same structure using TBAs/TBP and could reduce the As level in the InP segments. A simulation using a finite-difference time-domain method suggests that the nanowire growth was dominated by the diffusion of the reaction species with long residence time on the surface. For TBAs/TBP, when the source gases were changed, the formed surface species showed a short diffusion length so as to reduce the As background after the InAsP growth.
authors.affiliation: NTT Basic Research Laboratories, NTT Corporation , 3-1 Morinosato- Wakamiya, Atsugi, Kanagawa 243-0198, Japan. tateno.kouta@lab.ntt.co.jp
authors.forename: Kouta
authors.initials: K
authors.lastname: Tateno
authors.forename: Guoqiang
authors.initials: G
authors.lastname: Zhang
authors.forename: Hideki
authors.initials: H
authors.lastname: Gotoh
authors.forename: Tetsuomi
authors.initials: T
authors.lastname: Sogawa
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D007204:Indium / Q000737:chemistry*; D008422:Materials Testing; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D010720:Phosphines / Q000737:chemistry*; D045663:Quantum Dots
chemical_list: D001152:Arsenicals; D010720:Phosphines; D007204:Indium; C076773:indium arsenide; C090882:indium phosphide