title: Theoretical studies of g factors for V³+ in ZnS, ZnSe and ZnTe crystals.
abstract: In this paper, complete high-order perturbation formulas are established based not only on the contributions of the spin-orbit coupling effect of the central ion and the ligands, but also on that of the charge-transfer levels. The electron paramagnetic resonance g-factors of ZnS:V(3+), ZnSe:V(3+), and ZnTe:V(3+) crystals are calculated from the formulas. The calculations of the EPR g-factors agree well with the experimental values. The contribution rate of the charge-transfer levels (|Δg(T)/Δg(F)|) are 20.16%, 24.86%, and 24.87% for ZnS:V(3+), ZnSe:V(3+), and ZnTe:V(3+) crystals, respectively.
authors.affiliation: College of Sciences, Henan Agricultural University, 450002 Zhengzhou, China. zhulxasia@163.com
authors.forename: Lianxuan
authors.initials: L
authors.lastname: Zhu
authors.forename: Anqing
authors.initials: A
authors.lastname: Zhao
authors.forename: Minjie
authors.initials: M
authors.lastname: Wang
mesh_terms: D003460:Crystallization; D007477:Ions; D008962:Models, Theoretical; D008968:Molecular Conformation; D018036:Selenium Compounds / Q000737:chemistry*; D013440:Sulfides / Q000737:chemistry*; D013691:Tellurium / Q000737:chemistry*; D017967:Zinc Compounds / Q000737:chemistry*
chemical_list: D007477:Ions; D018036:Selenium Compounds; D013440:Sulfides; D017967:Zinc Compounds; C031238:zinc sulfide; D013691:Tellurium; C044696:zinc selenide