title: Photo-induced electrochemical anodization of p-type silicon: achievement and demonstration of long term surface stability.
abstract: Surface stability is achieved and demonstrated by porous  silicon (PS) fabricated using a wavelength-dependent photo-electrochemical (PEC) anodization technique. During anodization, the photon flux for all wavelengths was kept constant while only the effect of light wavelength on the surface morphology of PS was investigated. PS optical sensors were realized, characterized and tested using a photoluminescence (PL) quenching technique. An aliphatic chain of alcohols (methanol to n-octanol) was detected in the range of 10-200 ppm. Long term surface stability was observed from samples prepared under red (750-620 nm) and green illumination (570-495 nm), where the PL quenching cycles evoke the possibility of using PS for stable sensor device applications. This study provides a route for preparing highly sensitive organic vapour sensors with a precise selection of the fabrication parameters and demonstrating their prolonged performance.
authors.affiliation: Nano-Sensor Research Laboratory, Department of Applied Sciences & Humanities, Faculty of Engineering and Technology, Jamia Millia Islamia (Central University), New Delhi, India.
authors.forename: Saakshi
authors.initials: S
authors.lastname: Dhanekar
authors.forename: S S
authors.initials: SS
authors.lastname: Islam
authors.lastname: Harsh
mesh_terms: D003460:Crystallization / Q000379:methods*; D004566:Electrodes; D004574:Electromagnetic Fields; D004595:Electroplating / Q000379:methods*; D008027:Light; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000528:radiation effects*; D010316:Particle Size; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry* / Q000528:radiation effects*; D013499:Surface Properties
chemical_list: D046911:Macromolecular Substances; D012825:Silicon