Controlled dielectrophoretic nanowire self-assembly using atomic layer deposition and suspended microfabricated electrodes.
Effects of design and materials on the dielectrophoretic self-assembly of individual gallium nitride nanowires (GaN NWs) onto microfabricated electrodes have been experimentally investigated. The use of TiO(2) surface coating generated by atomic layer deposition (ALD) improves dielectrophoretic assembly yield of individual GaN nanowires on microfabricated structures by as much as 67%. With a titanium dioxide coating, individual nanowires were placed across suspended electrode pairs in 46% of tests (147 out of 320 total), versus 28% of tests (88 out of 320 total tests) that used uncoated GaN NWs. An additional result from these tests was that suspending the electrodes 2.75 μm above the substrate corresponded with up to 15.8% improvement in overall assembly yield over that of electrodes fabricated directly on the substrate.
Samtec Microelectronics, Colorado Springs, CO 80919, USA.
Alicia I
AI
Baca
Joseph J
JJ
Brown
Kris A
KA
Bertness
Victor M
VM
Bright