Fabrication of high-density In(3)Sb(1)Te(2) phase change nanoarray on glass-fabric reinforced flexible substrate.
Mushroom-shaped phase change memory (PCM) consisting of a Cr/In(3)Sb(1)Te(2) (IST)/TiN (bottom electrode) nanoarray was fabricated via block copolymer lithography and single-step dry etching with a gas mixture of Ar/Cl(2). The process was performed on a high performance transparent glass-fabric reinforced composite film (GFR Hybrimer) suitable for use as a novel substrate for flexible devices. The use of GFR Hybrimer with low thermal expansion and flat surfaces enabled successful nanoscale patterning of functional phase change materials on flexible substrates. Block copolymer lithography employing asymmetrical block copolymer blends with hexagonal cylindrical self-assembled morphologies resulted in the creation of hexagonal nanoscale PCM cell arrays with an areal density of approximately 176 Gb/in(2).
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Republic of Korea.
Jong Moon
JM
Yoon
Dong Ok
DO
Shin
You
Y
Yin
Hyeon Kook
HK
Seo
Daewoon
D
Kim
Yong In
YI
Kim
Jung Ho
JH
Jin
Yong Tae
YT
Kim
Byeong-Soo
BS
Bae
Sang Ouk
SO
Kim
Jeong Yong
JY
Lee