Memory effect of low-temperature processed ZnO thin-film transistors having metallic nanoparticles as charge trapping elements.
In this study, non-volatile memory effect was characterized using the single-transistor-based memory devices based on self-assembled gold nanoparticles (AuNP) as the charge trapping elements and atomic-layer deposited ZnO as the channel layer. The fabricated memory devices showed controllable and reliable threshold voltage shifts according to the program/erase operations that resulted from the charging/discharging of charge carriers in the charge trapping elements. Reliable non-volatile memory properties were also confirmed by the endurance and data retention measurements. The low temperature processes of the key device elements, i.e., AuNP charge trapping layer and ZnO channel layer, enable the use of this device structure to the transparent/flexible non-volatile memory applications in the near future.
School of Advanced Materials Engineering, Kookmin University, Seoul 136-702, Korea.
Young-Su
YS
Park
Soo-Jin
SJ
Kim
Si-Hoon
SH
Lyu
Byoung Hoon
BH
Lee
Myung Mo
MM
Sung
Jaegab
J
Lee
Jang-Sik
JS
Lee