Sequential chemical bath deposition of Cu(2-x)Se/CdS film by suppressing ion-exchange reaction.
Chemical bath deposition is an attractive technique to form single- and multilayered metal oxide/chalcogenide films on electrode surfaces. However, the occurrence of desorption and/or ion-exchange reaction during subsequent chemical bath deposition has so far limited preparation of multilayered metal oxide/chalcogenide films. In this paper, we report a method to prevent desorption and ion-exchange reaction of metal oxide/chalcogenide on electrode surfaces using a polyelectrolyte multilayer during sequential chemical bath deposition. By controlling the ion permeability of the polyelectrolyte multilayer, Cu(2-x)Se film was successfully deposited on the CdS film. The Cu(2-x)Se/CdS film is confirmed by UV-vis absorption spectroscopy, scanning electron microscopy, energy dispersive X-ray analysis, and X-ray powder diffractometer. Furthermore, the Cu(2-x)Se/CdS films were investigated as photoinduced charge transfer devices which showed photocurrents of 0.22 mA/cm(2) under illumination (I = 100 mW/cm(2)).
Department of Chemistry, Hanyang University, Seoul 133-791, Republic of Korea.
Gangri
G
Cai
Iseul
I
Lim
Deok Yeon
DY
Lee
Nabeen K
NK
Shrestha
Joong Kee
JK
Lee
Yoon-Chae
YC
Nah
Wonjoo
W
Lee
Sung-Hwan
SH
Han