Particle-assisted Ga(x)In(1-x)P nanowire growth for designed bandgap structures.
Non-tapered vertically straight Ga(x)In(1-x)P nanowires were grown in a compositional range from Ga(0.2)In(0.8)P to pure GaP in particle-assisted mode by controlling the trimethylindium, trimethylgallium and hydrogen chloride flows in metal-organic vapor phase epitaxy. X-ray energy dispersive spectroscopy in transmission electron microscopy revealed homogeneous radial material composition in single nanowires, whereas variations in the material composition were found along the nanowires. High-resolution x-ray diffraction indicates a variation of the material composition on the order of about 19% measuring an entire sample area, i.e., including edge effects during growth. The non-capped nanowires emit room temperature photoluminescence strongly in the energy range of 1.43-2.16 eV, correlated with the bandgap expected from the material composition.
Lund University, Solid State Physics and the Nanometer Structure Consortium, Box 118, SE-22100 Lund, Sweden.
D
D
Jacobsson
J M
JM
Persson
D
D
Kriegner
T
T
Etzelstorfer
J
J
Wallentin
J B
JB
Wagner
J
J
Stangl
L
L
Samuelson
K
K
Deppert
M T
MT
Borgström