Suppressed recombination in quantum dot-sensitized solar cells with blocking layers on FTO substrates.
The compact and thin TiO2 blocking layers (c-TiO2) were formed on F-doped SnO2 (FTO) substrate in quantum dots-sensitized solar cells (QSSCs) by chemical deposition. The c-TiO2 layers induced indirect contact between electrolyte and FTO electrode, which reduced leakage in QSSCs. The QSSCs showed power conversion efficiency (Eff) of 3.85% in the presence of c-TiO2 layers which leads to 21% improved compared to that without c-TiO2 layers (Eff = 3.18%). The presence of the c-TiO2 layers in QSSCs also improved the stability under illumination.
Korea Institute of Science and Technology, 39-1 Hawolkok-Dong, Sungbuk-Ku, Seoul, 136-791, Republic of Korea.
Wonjoo
W
Lee
Beomjin
B
Yoo
Kyungkon
K
Kim
Doh-Kwon
DK
Lee
Honggon
H
Kim
Min Jae
MJ
Ko