Field-effect transistor-based solution-processed colloidal quantum dot photodetector with broad bandwidth into near-infrared region.
We demonstrate a solution-processed colloidal quantum dot (CQDs) photodetector with the configuration of a field-effect transistor (FET), in which the drain and source electrodes are fabricated by a shadow mask. By blending PbS CQDs into the hybrid blend, poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C(61)-butyric acid methylester (PCBM), the photosensitive spectrum of the nanocomposite blend is extended into the near-infrared region. A FET-based photodetector ITO/PMMA (180 nm)/P3HT:PCBM:PbS (110 nm)/Al, in which PMMA (polymethylmethacrylate) acts as the dielectric layer and P3HT:PCBM:PbS (in weight ratio of 1:1:1) as the active layer, shows a broad spectral bandwidth, a responsivity of 0.391 mA W(-1) and a specific detectivity of 1.31 × 10(11) Jones  are obtained at V(GS) = 1 V under 600 nm illumination with an intensity of 30 μW cm(-2). Therefore, it provides an easy way to fabricate such a FET-based photodetector with a channel length of some hundreds of micrometers by a shadow mask.
Laboratory of Nanophotonics Materials and Technology, Center for Micro and Nano Technology & School of Physics, Beijing Institute of Technology, Beijing, People's Republic of China. syyang@bit.edu.cn
Shengyi
S
Yang
Na
N
Zhao
Li
L
Zhang
Haizheng
H
Zhong
Ruibin
R
Liu
Bingsuo
B
Zou