Bipolar resistance effect observed in CdSe quantum-dots dominated structure of Zn/CdSe/Si.
In this study, we report our new finding of bipolar resistance effect (BRE) in quantum dots (QDs)-embedded structure of Zn/CdSe/Si. This effect features a remarkable linear resistance change and an enhanced BRE when a laser moves along the surface of the structure. The results show that the combination of BRE with QDs is useful for applications and may add a new functionality to QDs-based optoelectronic devices.
Department of Physics, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, China.
Shuai
S
Liu
Ping
P
Cheng
Hui
H
Wang