Effects of Pt junction on electrical transport of individual ZnO nanorod device fabricated by focused ion beam.
The electrical transport of individual ZnO nanorod devices manufactured by focused ion beam (FIB) was investigated by the direct measurement of electrical resistance at electrode junctions of cross-sectioned devices using two nanoprobes. The cathodoluminescence (CL) measurements were also performed to evaluate the crystallinity at the center and edge of the cross-sectioned ZnO nanorods. The electrical transport of the individual ZnO nanorod device depends strongly on the crystallinity of the ZnO nanorod itself and the carbon contents at Pt junctions. The ZnO-Au junction of the device acted as the fastest path for electrical transport.
Nano Analysis Center KIST, Hawolkok-dong, Sungbuk-ku, Seoul 130-650, Korea.
Sang-Won
SW
Yoon
Jong-Hyun
JH
Seo
Tae-Yeon
TY
Seong
Hoon
H
Kwon
Kon Bae
KB
Lee
Jae-Pyoung
JP
Ahn