Selective area atomic layer deposited ZnO nanodot on self-assembled monolayer pattern using a diblock copolymer nano-template.
ZnO nanodots were prepared by selective area atomic layer deposition (SA-ALD) on an octadecyltrichlorosilane (ODTS) self-assembly monolayers (SAMs) patterns formed using a diblock co-polymer (DBC) nanotemplate. In order to transfer well-ordered nanaotemplate in SAMs, SiO2 sacrificial layer was inserted between DBC and SAMs. Cylindrical nanoholes under 16 nm diameters were well-formed on SiO2 layer. SA-ALD of ZnO was successfully performed on by ODTS SAMs.
School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-784, Korea.
Doyoung
D
Kim
Jaehong
J
Yoon
Hyungjun
H
Kim