Resistive switching and magnetic modulation in cobalt-doped ZnO.
A combination of resistive switching and magnetic modulation gives rise to the integration of room temperature ferromagnetism (spin) and electrical properties (charge) into a simple Pt/Co:ZnO/Pt structure due to the formation of oxygen vacancy-based conductive filaments. This is promising for broadening the applications of random access memories to encode quaternary information.
Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
Guang
G
Chen
Cheng
C
Song
Chao
C
Chen
Shuang
S
Gao
Fei
F
Zeng
Feng
F
Pan
D003035:Cobalt / Q000737:chemistry*; D017097:Electric Impedance; D060328:Magnetic Phenomena; D013696:Temperature; D015034:Zinc Oxide / Q000737:chemistry*
D003035:Cobalt; D015034:Zinc Oxide