Extremely narrow violet photoluminescence line from ultrathin InN single quantum well on step-free GaN surface.
An ultrathin (one monolayer thick) InN single quantum well (SQW) formed on a step-free GaN surface shows very sharp violet PL emission. The size (16 μm in diameter) is large enough for state-of-the-art nanotechnology to handle. Longer wavelength emissions, such as green and red, are expected by increasing the thickness of the SQW through the utilization of the quantum size effect.
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa, 243-0198 Japan. akasaka.tetsuya@lab.ntt.co.jp
Tetsuya
T
Akasaka
Hideki
H
Gotoh
Yasuyuki
Y
Kobayashi
Hideki
H
Yamamoto
D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D049408:Luminescent Agents / Q000737:chemistry*; D018625:Microscopy, Atomic Force; D036103:Nanotechnology; D009566:Nitrates / Q000737:chemistry*; D012666:Semiconductors; D013499:Surface Properties
D049408:Luminescent Agents; D009566:Nitrates; D007204:Indium; D005708:Gallium; C027235:gallium nitrate; C089767:indium nitrate