Anomalous high capacitance in a coaxial single nanowire capacitor.
Building entire multiple-component devices on single nanowires is a promising strategy for miniaturizing electronic applications. Here we demonstrate a single nanowire capacitor with a coaxial asymmetric Cu-Cu(2)O-C structure, fabricated using a two-step chemical reaction and vapour deposition method. The capacitance measured from a single nanowire device corresponds to ~140 μF cm(-2), exceeding previous reported values for metal-insulator-metal micro-capacitors and is more than one order of magnitude higher than what is predicted by classical electrostatics. Quantum mechanical calculations indicate that this unusually high capacitance may be attributed to a negative quantum capacitance of the dielectric-metal interface, enhanced significantly at the nanoscale.
Department of Mechanical Engineering & Materials Science, Rice University, Houston, Texas 77005, USA.
Zheng
Z
Liu
Yongjie
Y
Zhan
Gang
G
Shi
Simona
S
Moldovan
Mohamed
M
Gharbi
Li
L
Song
Lulu
L
Ma
Wei
W
Gao
Jiaqi
J
Huang
Robert
R
Vajtai
Florian
F
Banhart
Pradeep
P
Sharma
Jun
J
Lou
Pulickel M
PM
Ajayan
D025802:Electric Capacitance; D036103:Nanotechnology / Q000379:methods*; D053770:Nanowires / Q000737:chemistry*