Correlation between evolution of resistive switching and oxygen vacancy configuration in La₀.₅Ca₀.₅MnO₃ based memristive devices.
We here report a study of the correlation between the evolution of resistive switching and the oxygen vacancy configuration in La₀.₅Ca₀.₅MnO₃ (LCMO) based memristive devices. By taking advantage of LCMO located at a phase boundary of the metal-to-insulator transition, we observe the development of the high resistive states, depending upon not only the electrical pulse magnitude but also the switching cycles. We discuss the experimental results by an oxygen migration model that involves both single isolated and clustered oxygen vacancies, which are later verified using aberration-corrected scanning transmission electron microscopy.
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China. z.wang@iphy.ac.cn
Zhi-Hong
ZH
Wang
Yang
Y
Yang
Lin
L
Gu
H-U
HU
Habermeier
Ri-Cheng
RC
Yu
Tong-Yun
TY
Zhao
Ji-Rong
JR
Sun
Bao-Gen
BG
Shen