MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap.
We report on the fabrication of top-gate phototransistors based on a few-layered MoS(2) nanosheet with a transparent gate electrode. Our devices with triple MoS(2) layers exhibited excellent photodetection capabilities for red light, while those with single- and double-layers turned out to be quite useful for green light detection. The varied functionalities are attributed to energy gap modulation by the number of MoS(2) layers. The photoelectric probing on working transistors with the nanosheets demonstrates that single-layer MoS(2) has a significant energy bandgap of 1.8 eV, while those of double- and triple-layer MoS(2) reduce to 1.65 and 1.35 eV, respectively.
Institute of Physics and Applied Physics and §School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea.
Hee Sung
HS
Lee
Sung-Wook
SW
Min
Youn-Gyung
YG
Chang
Min Kyu
MK
Park
Taewook
T
Nam
Hyungjun
H
Kim
Jae Hoon
JH
Kim
Sunmin
S
Ryu
Seongil
S
Im