Synthesis of few-layer GaSe nanosheets for high performance photodetectors.
Two-dimensional (2D) semiconductor nanomaterials hold great promises for future electronics and optics. In this paper, a 2D nanosheets of ultrathin GaSe has been prepared by using mechanical cleavage and solvent exfoliation method. Single- and few-layer GaSe nanosheets are exfoliated on an SiO(2)/Si substrate and characterized by atomic force microscopy and Raman spectroscopy. Ultrathin GaSe-based photodetector shows a fast response of 0.02 s, high responsivity of 2.8 AW(-1) and high external quantum efficiency of 1367% at 254 nm, indicating that the two-dimensional nanostructure of GaSe is a new promising material for high performance photodetectors.
Key Lab of Microsystem and Microstructure, Harbin Institute of Technology, Ministry of Education, No 2 YiKuang Street, Harbin 150080, PR China.
Pingan
P
Hu
Zhenzhong
Z
Wen
Lifeng
L
Wang
Pingheng
P
Tan
Kai
K
Xiao