Toward the controlled synthesis of hexagonal boron nitride films.
Atomically smooth hexagonal boron nitride (h-BN) layers have very useful properties and thus potential applications for protective coatings, deep ultraviolet (DUV) emitters, and as a dielectric for nanoelectronics devices. In this paper, we report on the growth of h-BN by a low-pressure chemical vapor deposition (LPCVD) process using diborane and ammonia as the gas precursors. The use of LPCVD allows synthesis of h-BN with a controlled number of layers defined by the growth conditions, temperature, time, and gas partial pressure. Furthermore, few-layer h-BN was also grown by a sequential growth method, and insights into the growth mechanism are described, thus forming the basis of future growth of h-BN by atomic layer epitaxy.
Department of Mechanical Engineering and the Materials Science and Engineering Program, The University of Texas at Austin, Austin, Texas 78712, United States. aismach@austin.utexas.edu
Ariel
A
Ismach
Harry
H
Chou
Domingo A
DA
Ferrer
Yaping
Y
Wu
Stephen
S
McDonnell
Herman C
HC
Floresca
Alan
A
Covacevich
Cody
C
Pope
Richard
R
Piner
Moon J
MJ
Kim
Robert M
RM
Wallace
Luigi
L
Colombo
Rodney S
RS
Ruoff