Resistance switching characteristics of solid electrolyte chalcogenide Ag(2)Se nanoparticles for flexible nonvolatile memory applications.
Solution-processed mechanically flexible resistive random access memories are fabricated using Ag(2)Se nanoparticles; the fabricated Ag/Ag(2)Se/Au memory devices on flexible poly-ethylene-naphthalate substrates show bipolar switching memory characteristics, with low voltage (<1.5 V) operation, no significant retention loss after 10(5) s, and no degradation in endurance after 10(4) switching cycles, with stable operation even under a mechanical strain of 0.38%.
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720-1770, USA.
Jaewon
J
Jang
Feng
F
Pan
Kyle
K
Braam
Vivek
V
Subramanian
D025802:Electric Capacitance; D017097:Electric Impedance; D055615:Electrical Equipment and Supplies; D053758:Nanoparticles; D018036:Selenium Compounds / Q000737:chemistry*; D018030:Silver Compounds / Q000737:chemistry*
D018036:Selenium Compounds; D018030:Silver Compounds