GaS and GaSe ultrathin layer transistors.
Room-temperature, bottom-gate, field-effect transistor characteristics of 2D ultrathin layer GaS and GaSe prepared from the bulk crystals using a micromechanical cleavage technique are reported. The transistors based on active GaS and GaSe ultrathin layers demonstrate typical n-and p-type conductance transistor operation along with a good ON/OFF ratio and electron differential mobility.
Department of Materials Science and Engineering, International Institute of Nanotechnology, Northwestern University, Evanston, IL 60208, USA.
Dattatray J
DJ
Late
Bin
B
Liu
Jiajun
J
Luo
Aiming
A
Yan
H S S Ramakrishna
HS
Matte
Matthew
M
Grayson
C N R
CN
Rao
Vinayak P
VP
Dravid
D004553:Electric Conductivity; D005708:Gallium / Q000737:chemistry*; D008958:Models, Molecular; D008968:Molecular Conformation; D012643:Selenium / Q000737:chemistry*; D013440:Sulfides / Q000737:chemistry*; D014173:Transistors, Electronic
D013440:Sulfides; C517764:gallium selenide; D005708:Gallium; D012643:Selenium