High response piezoelectric and piezoresistive materials for fast, low voltage switching: simulation and theory of transduction physics at the nanometer-scale.
Field effect transistors are reaching the limits imposed by the scaling of materials and the electrostatic gating physics underlying the device. In this Communication, a new type of switch based on different physics, which combines known piezoelectric and piezoresistive materials, is described and is shown by theory and simulation to achieve gigahertz digital switching at low voltage (0.1 V).
Physical Sciences, IBM TJ Watson Research Center, 1101 Kitchawan Rd., Yorktown Heights, NY 10520, USA.
Dennis M
DM
Newns
Bruce G
BG
Elmegreen
Xiao-Hu
XH
Liu
Glenn J
GJ
Martyna
D008670:Metals / Q000737:chemistry; D036103:Nanotechnology; D010087:Oxides / Q000737:chemistry; D055672:Static Electricity; D014173:Transistors, Electronic
D008670:Metals; D010087:Oxides