Achieving high field-effect mobility in amorphous indium-gallium-zinc oxide by capping a strong reduction layer.
An effective approach to reduce defects and increase electron mobility in a-IGZO thin-film transistors (a-IGZO TFTs) is introduced. A strong reduction layer, calcium, is capped onto the back interface of a-IGZO TFT. After calcium capping, the effective electron mobility of a-IGZO TFT increases from 12 cm(2) V(-1) s(-1) to 160 cm(2) V(-1) s(-1). This high mobility is a new record, which implies that the proposed defect reduction effect is key to improve electron transport in oxide semiconductor materials.
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001, Ta-Hsueh Rd, HsinChu, 300, Taiwan. hsiaowen@mail.nctu.edu.tw
Hsiao-Wen
HW
Zan
Chun-Cheng
CC
Yeh
Hsin-Fei
HF
Meng
Chuang-Chuang
CC
Tsai
Liang-Hao
LH
Chen
D004579:Electron Transport; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D014173:Transistors, Electronic; D015034:Zinc Oxide / Q000737:chemistry*
D007204:Indium; D005708:Gallium; D015034:Zinc Oxide