Effects of strain on the carrier mobility in silicon nanowires.
We investigate electron and hole mobilities in strained silicon nanowires (Si NWs) within an atomistic tight-binding framework. We show that the carrier mobilities in Si NWs are very responsive to strain and can be enhanced or reduced by a factor >2 (up to 5×) for moderate strains in the ± 2% range. The effects of strain on the transport properties are, however, very dependent on the orientation of the nanowires. Stretched 100 Si NWs are found to be the best compromise for the transport of both electrons and holes in ≈10 nm diameter Si NWs. Our results demonstrate that strain engineering can be used as a very efficient booster for NW technologies and that due care must be given to process-induced strains in NW devices to achieve reproducible performances.
L_Sim, SP2M, UMR-E CEA/UJF-Grenoble 1, Institut Nanosciences et Cryogénie (INAC), Grenoble, France. yniquet@cea.fr
Yann-Michel
YM
Niquet
Christophe
C
Delerue
Christophe
C
Krzeminski