Critically coupled silicon Fabry-Perot photodetectors based on the internal photoemission effect at 1550 nm.
In this paper, design, fabrication and characterization of an all-silicon photodetector (PD) at 1550 nm, have been reported. Our device is a surface-illuminated PD constituted by a Fabry-Perot microcavity incorporating a Cu/p-Si Schottky diode. Its absorption mechanism, based on the internal photoemission effect (IPE), has been enhanced by critical coupling condition. Our experimental findings prove a peak responsivity of 0.063 mA/W, which is the highest value obtained in a surface-illuminated IPE-based Si PD around 1550 nm. Finally, device capacitance measurements have been carried out demonstrating a capacitance < 5 pF which has the potential for GHz operation subject to a reduction of the series resistance of the ohmic contact.
Istituto per la Microelettronica e Microsistemi (IMM) - Consiglio Nazionale delle Ricerche – Sez, Napoli, Italy. maurizio.casalino@na.imm.cnr.it
Maurizio
M
Casalino
Giuseppe
G
Coppola
Mario
M
Iodice
Ivo
I
Rendina
Luigi
L
Sirleto
D004867:Equipment Design; D019544:Equipment Failure Analysis; D007368:Interferometry / Q000295:instrumentation*; D008904:Miniaturization; D010783:Photometry / Q000295:instrumentation*; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*
D012825:Silicon