Experimental investigation of wavelength-selective optical feedback for a high-power quantum dot superluminescent device with two-section structure.
In this work, a high-power and broadband quantum dot superluminescent diode (QD-SLD) is achieved by using a two-section structure. The QD-SLD device consists of a tapered titled ridge waveguide section supplying for high optical gain and a straight titled ridge waveguide section to tune optical feedback from the rear facet of the device. The key point of our design is to achieve the wavelength-selective optical feedback to the emission of the QDs' ground state (GS) and 1st excited state (ES) by tuning the current densities injected in the straight titled section. With GS-dominant optical feedback under proper current-injection of the straight titled region, a high output power of 338 mW and a broad bandwidth of 65 nm is obtained simultaneously by the contribution associated to the QDs' GS and 1st ES emission.
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Xinkun
X
Li
Peng
P
Jin
Qi
Q
An
Zuocai
Z
Wang
Xueqin
X
Lv
Heng
H
Wei
Jian
J
Wu
Ju
J
Wu
Zhanguo
Z
Wang
D003198:Computer Simulation; D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005246:Feedback; D008027:Light; D008163:Luminescent Measurements / Q000295:instrumentation*; D008962:Models, Theoretical; D045663:Quantum Dots; D012031:Refractometry / Q000295:instrumentation*; D012542:Scattering, Radiation