DNA interlayers enhance charge injection in organic field-effect transistors.
By inserting DNA interlayers beneath the Au contact, the contact resistance of PC(70) BM field-effect transistorss is reduced by approximately 30 times at a gate bias of 20 V. The electron and hole mobilities of ambipolar diketopyrrolopyrrole transistors are increased by one order of magnitude with a reduction of the threshold voltage from 12 to 6.5 V.
Center for Polymers and Organic Solids, Departments of Chemistry and Biochemistry and Materials, University of California, Santa Barbara, Santa Barbara, CA 93106, USA.
Yuan
Y
Zhang
Peter
P
Zalar
Chunki
C
Kim
Samuel
S
Collins
Guillermo C
GC
Bazan
Thuc-Quyen
TQ
Nguyen
D004247:DNA / Q000737:chemistry*; D004566:Electrodes; D037741:Fullerenes / Q000737:chemistry*; D006046:Gold / Q000737:chemistry; D011789:Quantum Theory; D014173:Transistors, Electronic
D037741:Fullerenes; D006046:Gold; D004247:DNA