Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators.
Carrier-depletion based silicon modulators with lateral and interdigitated PN junctions are compared systematically on the same fabrication platform. The interdigitated diode is shown to outperform the lateral diode in achieving a low VπLπ of 0.62 V∙cm with comparable propagation loss at the expense of a higher depletion capacitance. The low VπLπ of the interdigitated PN junction is employed to demonstrate 10 Gbit/s modulation with 7.5 dB extinction ration from a 500 µm long device whose static insertion loss is 2.8 dB. In addition, up to 40 Gbit/s modulation is demonstrated for a 3 mm long device comprising a lateral diode and a co-designed traveling wave electrode.
Photonics Research Group, Department of Information Technology, Ghent University-imec, Center for Nano- and Biophotonics (NB Photonics), St.-Pietersnieuwstraat 41,9000 Gent, Belgium. hyu@intec.ugent.be
Hui
H
Yu
Marianna
M
Pantouvaki
Joris
J
Van Campenhout
Dietmar
D
Korn
Katarzyna
K
Komorowska
Pieter
P
Dumon
Yanlu
Y
Li
Peter
P
Verheyen
Philippe
P
Absil
Luca
L
Alloatti
David
D
Hillerkuss
Juerg
J
Leuthold
Roel
R
Baets
Wim
W
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