Graded bit patterned magnetic arrays fabricated via angled low-energy He ion irradiation.
A bit patterned magnetic array based on Co/Pd magnetic multilayers with a binary perpendicular magnetic anisotropy distribution was fabricated. The binary anisotropy distribution was attained through angled helium ion irradiation of a bit edge using hydrogen silsesquioxane (HSQ) resist as an ion stopping layer to protect the rest of the bit. The viability of this technique was explored numerically and evaluated through magnetic measurements of the prepared bit patterned magnetic array. The resulting graded bit patterned magnetic array showed a 35% reduction in coercivity and a 9% narrowing of the standard deviation of the switching field.
Electrical and Computer Engineering, University of Houston, Houston, TX 77584, USA. lchang5@uh.edu
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Chang
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Nasruallah
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Ruchhoeft
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Khizroev
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Litvinov
D003035:Cobalt / Q000737:chemistry* / Q000528:radiation effects; D004867:Equipment Design; D019544:Equipment Failure Analysis; D020450:Heavy Ions; D006371:Helium; D059346:Magnets; D008422:Materials Testing; D049329:Nanostructures / Q000737:chemistry* / Q000528:radiation effects / Q000648:ultrastructure*; D010165:Palladium / Q000737:chemistry* / Q000528:radiation effects; D010316:Particle Size
D006371:Helium; D003035:Cobalt; D010165:Palladium