Directional single mode emission in a microcavity laser.
We report directional single mode emission in an InGaAsP semiconductor microcavity laser, which is composed of a circle and an isosceles trapezoid. When exciting a whole cavity, the laser generates a single mode without hopping in two directions over a wide range of continuous injection currents. In the emission spectrum, it is confirmed from the equidistant mode spacing that a scar mode becomes a single lasing mode above the lasing threshold. A numerical analysis of the boundary element method shows that the far-field pattern of the resonance agrees well with that of the experiment.
Department of Physics, Sogang University, Seoul 121-742, South Korea.
Myung-Woon
MW
Kim
Chang-Hwan
CH
Yi
Sunghwan
S
Rim
Chil-Min
CM
Kim
Jong-Hoi
JH
Kim
Kwang-Ryung
KR
Oh
D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007834:Lasers; D008027:Light; D008962:Models, Theoretical; D012542:Scattering, Radiation; D012666:Semiconductors