Nanolasers grown on silicon-based MOSFETs.
We report novel indium gallium arsenide (InGaAs) nanopillar lasers that are monolithically grown on (100)-silicon-based functional metal-oxide-semiconductor field effect transistors (MOSFETs) at low temperature (410 °C). The MOSFETs maintain their performance after the nanopillar growth, providing a direct demonstration of complementary metal-oxide-semiconudctor (CMOS) compatibility. Room-temperature operation of optically pumped lasers is also achieved. To our knowledge, this is the first time that monolithically integrated lasers and transistors have been shown to work on the same silicon chip, serving as a proof-of-concept that such integration can be extended to more complicated CMOS integrated circuits.
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA.
Fanglu
F
Lu
Thai-Truong D
TT
Tran
Wai Son
WS
Ko
Kar Wei
KW
Ng
Roger
R
Chen
Connie
C
Chang-Hasnain
D001152:Arsenicals / Q000737:chemistry*; D003460:Crystallization / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D007834:Lasers; D036103:Nanotechnology / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry*; D014173:Transistors, Electronic
D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide; D012825:Silicon