Mapping of minority carrier lifetime distributions in multicrystalline silicon using transient electron-beam-induced current.
We have used transient electron-beam-induced current (EBIC) to map minority carrier lifetime distributions in multicrystalline Silicon (mc-Si). In this technique, the electron beam from a scanning transmission electron microscope was on-off modulated while the sample was scanned. The resulting transient EBIC was analyzed to form a lifetime map. An analytical function was introduced as part of the analysis in determining this map. We have verified this approach using numerical simulations and have reproduced a lifetime map for an mc-Si wafer.
Department of Electronics, EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Japan.
Takuya
T
Kushida
Shigeyasu
S
Tanaka
Chiaki
C
Morita
Takayoshi
T
Tanji
Yoshio
Y
Ohshita
D004583:Electrons; D008855:Microscopy, Electron, Scanning / Q000379:methods; D008962:Models, Theoretical; D017655:Silicon Compounds / Q000737:chemistry*; D014171:Transients and Migrants
D017655:Silicon Compounds