Ultralow drive voltage silicon traveling-wave modulator.
There has been great interest in the silicon platform as a material system for integrated photonics. A key challenge is the development of a low-power, low drive voltage, broadband modulator. Drive voltages at or below 1 Vpp are desirable for compatibility with CMOS processes. Here we demonstrate a CMOS-compatible broadband traveling-wave modulator based on a reverse-biased pn junction. We demonstrate operation with a drive voltage of 0.63 Vpp at 20 Gb/s, a significant improvement in the state of the art, with an RF energy consumption of only 200 fJ/bit.
Department of Electrical Engineering, University of Washington, Campus Box 352500, Seattle, Washington 98195, USA. baehrjt@washington.edu
Tom
T
Baehr-Jones
Ran
R
Ding
Yang
Y
Liu
Ali
A
Ayazi
Thierry
T
Pinguet
Nicholas C
NC
Harris
Matt
M
Streshinsky
Poshen
P
Lee
Yi
Y
Zhang
Andy Eu-Jin
AE
Lim
Tsung-Yang
TY
Liow
Selin Hwee-Gee
SH
Teo
Guo-Qiang
GQ
Lo
Michael
M
Hochberg
D011211:Electric Power Supplies; D004574:Electromagnetic Fields; D004867:Equipment Design; D019544:Equipment Failure Analysis; D055096:Optical Devices; D012666:Semiconductors; D013685:Telecommunications / Q000295:instrumentation*