Silicon-based current-injected light emitting diodes with Ge self-assembled quantum dots embedded in photonic crystal nanocavities.
Room temperature light emission from Ge self-assembled quantum dots (QDs) embedded in L3-type photonic crystal (PhC) nanocavity is successfully demonstrated under current injection through a lateral PIN diode structure. The Ge QDs are grown on silicon-on-insulator (SOI) wafer by solid-source molecular beam epitaxy (SS-MBE), and the PIN diode is fabricated by selective ion implantation around the PhC cavity. Under an injected current larger than 0.5 mA, strong resonant electroluminescence (EL) around 1.3-1.5 μm wavelength corresponding to the PhC cavity modes is observed. A sharp peak with a quality factor up to 260 is obtained in the EL spectrum. These results show a possible way to realize practical silicon-based light emitting devices.
Research Center for Silicon Nano-Science, Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082, Japan. xxu@tcu.ac.jp
Xuejun
X
Xu
Toshiki
T
Tsuboi
Taichi
T
Chiba
Noritaka
N
Usami
Takuya
T
Maruizumi
Yasuhiro
Y
Shiraki
D004867:Equipment Design; D019544:Equipment Failure Analysis; D005857:Germanium / Q000737:chemistry*; D008029:Lighting / Q000295:instrumentation*; D049329:Nanostructures / Q000737:chemistry*; D045663:Quantum Dots; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*
D005857:Germanium; D012825:Silicon