Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip.
In this paper we present GaInAsSb photodiodes heterogeneously integrated on SOI by BCB adhesive bonding for operation in the short-wave infrared wavelength region. Photodiodes using evanescent coupling between the silicon waveguide and the III-V structure are presented, showing a room temperature responsivity of 1.4A/W at 2.3 µm. Photodiode structures using a diffraction grating to couple from the silicon waveguide layer to the integrated photodiode are reported, showing a responsivity of 0.4A/W at 2.2 µm.
. Photonics Research Group, INTEC Department, Ghent University-IMEC, Sint-Pietersnieuwstraat 41, 9000 Ghent, Belgium. alban.gassenq@intec.ugent.be
Alban
A
Gassenq
Nannicha
N
Hattasan
Laurent
L
Cerutti
Jean Batiste
JB
Rodriguez
Eric
E
Tournié
Gunther
G
Roelkens
D001152:Arsenicals / Q000737:chemistry*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D007259:Infrared Rays; D008027:Light; D010783:Photometry / Q000295:instrumentation*; D012031:Refractometry / Q000295:instrumentation*; D012542:Scattering, Radiation; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*; D020349:Surface Plasmon Resonance / Q000295:instrumentation*; D018511:Systems Integration
D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide; D012825:Silicon