Observation of conductance quantization in oxide-based resistive switching memory.
Conductance quantization phenomena are observed in oxide-based resistive switching memories. These phenomena can be understood by the formation and disruption of atomic-scale conductive filaments in the insulating oxide matrix. The quantum conductance effect can be artificially modulated by controlling the electrical parameters in Set and Reset processes, and can be used for multi-level data storage and help understand and design one-dimensional structures at atomic scales in various materials systems.
Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, PR China.
Xiaojian
X
Zhu
Wenjing
W
Su
Yiwei
Y
Liu
Benlin
B
Hu
Liang
L
Pan
Wei
W
Lu
Jiandi
J
Zhang
Run-Wei
RW
Li
D049329:Nanostructures / Q000737:chemistry; D036103:Nanotechnology; D010087:Oxides / Q000737:chemistry*; D011789:Quantum Theory; D012666:Semiconductors
D010087:Oxides