Low-temperature poly-Si nanowire junctionless devices with gate-all-around TiN/Al2O3 stack structure using an implant-free technique.
In this work, we present a gate-all-around (GAA) low-temperature poly-Si nanowire (NW) junctionless device with TiN/Al.
Chun-Jung
CJ
Su
Tzu-I
TI
Tsai
Horng-Chih
HC
Lin
Tiao-Yuan
TY
Huang
Tien-Sheng
TS
Chao