Synthesis of S-doped graphene by liquid precursor.
Doping is a common and effective approach to tailor semiconductor properties. Here, we demonstrate the growth of large-area sulfur (S)-doped graphene sheets on copper substrate via the chemical vapor deposition technique by using liquid organics (hexane in the presence of S) as the precursor. We found that S could be doped into graphene's lattice and mainly formed linear nanodomains, which was proved by elemental analysis, high resolution transmission microscopy and Raman spectra. Measurements on S-doped graphene field-effect transistors (G-FETs) revealed that S-doped graphene exhibited lower conductivity and distinctive p-type semiconductor properties compared with those of pristine graphene. Our approach has produced a new member in the family of graphene based materials and is promising for producing graphene based devices for multiple applications.
Department of Materials Science, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China.
Hui
H
Gao
Zheng
Z
Liu
Li
L
Song
Wenhua
W
Guo
Wei
W
Gao
Lijie
L
Ci
Amrita
A
Rao
Weijin
W
Quan
Robert
R
Vajtai
Pulickel M
PM
Ajayan
D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D006108:Graphite / Q000737:chemistry*; D006586:Hexanes / Q000737:chemistry*; D008422:Materials Testing; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012666:Semiconductors; D012996:Solutions; D013499:Surface Properties
D006586:Hexanes; D012996:Solutions; D006108:Graphite