Breaking the speed limits of phase-change memory.
Phase-change random-access memory (PCRAM) is one of the leading candidates for next-generation data-storage devices, but the trade-off between crystallization (writing) speed and amorphous-phase stability (data retention) presents a key challenge. We control the crystallization kinetics of a phase-change material by applying a constant low voltage via prestructural ordering (incubation) effects. A crystallization speed of 500 picoseconds was achieved, as well as high-speed reversible switching using 500-picosecond pulses. Ab initio molecular dynamics simulations reveal the phase-change kinetics in PCRAM devices and the structural origin of the incubation-assisted increase in crystallization speed. This paves the way for achieving a broadly applicable memory device, capable of nonvolatile operations beyond gigahertz data-transfer rates.
Data Storage Institute, Agency for Science, Technology and Research (A*STAR), Singapore.
D
D
Loke
T H
TH
Lee
W J
WJ
Wang
L P
LP
Shi
R
R
Zhao
Y C
YC
Yeo
T C
TC
Chong
S R
SR
Elliott