Synthesis and characterization of a p-type boron arsenide photoelectrode.
A p-type boron arsenide photoelectrode was prepared from a material consisting of a thin layer of boron arsenide on a boron substrate. The structure of the material was identified using X-ray diffraction and scanning electron microscopy, and the surface composition was determined by means of X-ray photoelectron spectroscopy. The electrode was found to be photoactive under both visible light and UV-vis irradiation and displayed a photocurrent of ~0.1 mA/cm(2) under UV-vis irradiation at an applied potential of -0.25 V vs Ag/AgCl. Mott-Schottky plots for this boron arsenide electrode displayed an estimated flat-band potential near the onset photopotential. The estimated indirect band gap, as determined from incident photon-to-electron conversion efficiency plots, is 1.46 ± 0.02 eV.
Center for Electrochemistry, Department of Chemistry and Biochemistry, The University of Texas at Austin, Austin, Texas 78712, USA.
Shijun
S
Wang
Sarah F
SF
Swingle
Heechang
H
Ye
Fu-Ren F
FR
Fan
Alan H
AH
Cowley
Allen J
AJ
Bard