The investigation of selective pre-pattern free self-assembled Ge nano-dot formed by excimer laser annealing.
Localized Ge nano-dot formation by laser treatment was investigated and discussed in terms of strain distribution. The advantage of this technique is patterning localization of nano-dots without selective epitaxial growth, reducing costs and improving throughput. Self-assembled Ge nano-dots produced by excimer laser annealing statistically distributed dot density and size dependent on laser energy. Improvement in the crystallization quality of the dots was also studied, and a strain analysis was undertaken.
Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 116, Taiwan. mhlee@ntnu.edu.tw.
Min-Hung
MH
Lee
Pin-Guang
PG
Chen