title: Room-temperature electroluminescence from germanium in an Al(0.3)Ga(0.7)As/Ge heterojunction light-emitting diode by Γ-valley transport.
abstract: Group-IV materials for monolithic integration with silicon optoelectronic systems are being extensively studied. As a part of efforts, light emission from germanium has been pursued with the objective of evolving germanium into an efficient light source for optical communication systems. In this study, we demonstrate room-temperature electroluminescence from germanium in an Al(0.3)Ga(0.7)As/Ge heterojunction light-emitting diode without any complicated manipulation for alternating material properties of germanium. Electroluminescence peaks were observed near 1550 nm and the energy around this wavelength corresponds to that emitted from direct recombination at the Γ-valley of germanium.
authors: Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA.
authors: Seongjae
authors: S
authors: Cho
authors: Byung-Gook
authors: BG
authors: Park
authors: Changjae
authors: C
authors: Yang
authors: Stanley
authors: S
authors: Cheung
authors: Euijoon
authors: E
authors: Yoon
authors: Theodore I
authors: TI
authors: Kamins
authors: S J Ben
authors: SJ
authors: Yoo
authors: James S
authors: JS
authors: Harris