title: Robust spin crossover and memristance across a single molecule.
abstract: A nanoscale molecular switch can be used to store information in a single molecule. Although the switching process can be detected electrically in the form of a change in the molecule's conductance, adding spin functionality to molecular switches is a key concept for realizing molecular spintronic devices. Here we show that iron-based spin-crossover molecules can be individually and reproducibly switched between a combined high-spin, high-conduction state and a low-spin, low-conduction state, provided the individual molecule is decoupled from a metallic substrate by a thin insulating layer. These results represent a step to achieving combined spin and conduction switching functionality on the level of individual molecules.
authors: Karlsruhe Institute of Technology, Physikalisches Institut, Wolfgang-Gaede-Str. 1, 76131 Karlsruhe, Germany. toshio.miyamachi@kit.edu
authors: Toshio
authors: T
authors: Miyamachi
authors: Manuel
authors: M
authors: Gruber
authors: Vincent
authors: V
authors: Davesne
authors: Martin
authors: M
authors: Bowen
authors: Samy
authors: S
authors: Boukari
authors: Loïc
authors: L
authors: Joly
authors: Fabrice
authors: F
authors: Scheurer
authors: Guillaume
authors: G
authors: Rogez
authors: Toyo Kazu
authors: TK
authors: Yamada
authors: Philippe
authors: P
authors: Ohresser
authors: Eric
authors: E
authors: Beaurepaire
authors: Wulf
authors: W
authors: Wulfhekel