title: High indium content InGaN films grown by pulsed laser deposition using a dual-compositing target.
abstract: High indium compositions InGaN films were grown on sapphires using low temperature pulse laser deposition (PLD) with a dual-compositing target. This target was used to overcome the obstacle in the InGaN growth by PLD due to the difficulty of target preparation, and provided a co-deposition reaction, where InGaN grains generated from the indium and GaN vapors deposit on sapphire surface and then act as nucleation seeds to promote further InGaN growth. The effects of co-deposition on growth mechanisms, surface morphology, and electrical properties of films were thoroughly investigated and the results clearly show promise for the development of high indium InGaN films using PLD technique with dual-compositing targets.
authors: Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan.
authors: Kun-Ching
authors: KC
authors: Shen
authors: Tzu-Yu
authors: TY
authors: Wang
authors: Dong-Sing
authors: DS
authors: Wuu
authors: Ray-Hua
authors: RH
authors: Horng