title: High speed silicon Mach-Zehnder modulator based on interleaved PN junctions.
abstract: A high speed silicon Mach-Zehnder modulator is proposed based on interleaved PN junctions. This doping profile enabled both high modulation efficiency of V(π)L(π) = 1.5~2.0 V·cm and low doping-induced loss of ~10 dB/cm by applying a relatively low doping concentration of 2 × 10(17) cm(-3). High speed operation up to 40 Gbit/s with 7.01 dB extinction ratio was experimentally demonstrated with a short phase shifter of only 750 μm.
authors: State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China.
authors: Hao
authors: H
authors: Xu
authors: Xi
authors: X
authors: Xiao
authors: Xianyao
authors: X
authors: Li
authors: Yingtao
authors: Y
authors: Hu
authors: Zhiyong
authors: Z
authors: Li
authors: Tao
authors: T
authors: Chu
authors: Yude
authors: Y
authors: Yu
authors: Jinzhong
authors: J
authors: Yu