title: High-frequency self-aligned graphene transistors with transferred gate stacks.
abstract: Graphene has attracted enormous attention for radio-frequency transistor applications because of its exceptional high carrier mobility, high carrier saturation velocity, and large critical current density. Herein we report a new approach for the scalable fabrication of high-performance graphene transistors with transferred gate stacks. Specifically, arrays of gate stacks are first patterned on a sacrificial substrate, and then transferred onto arbitrary substrates with graphene on top. A self-aligned process, enabled by the unique structure of the transferred gate stacks, is then used to position precisely the source and drain electrodes with minimized access resistance or parasitic capacitance. This process has therefore enabled scalable fabrication of self-aligned graphene transistors with unprecedented performance including a record-high cutoff frequency up to 427 GHz. Our study defines a unique pathway to large-scale fabrication of high-performance graphene transistors, and holds significant potential for future application of graphene-based devices in ultra-high-frequency circuits.
authors: Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095, USA.
authors: Rui
authors: R
authors: Cheng
authors: Jingwei
authors: J
authors: Bai
authors: Lei
authors: L
authors: Liao
authors: Hailong
authors: H
authors: Zhou
authors: Yu
authors: Y
authors: Chen
authors: Lixin
authors: L
authors: Liu
authors: Yung-Chen
authors: YC
authors: Lin
authors: Shan
authors: S
authors: Jiang
authors: Yu
authors: Y
authors: Huang
authors: Xiangfeng
authors: X
authors: Duan
mesh_terms: D006108:Graphite / Q000737:chemistry*; D008872:Microwaves; D011845:Radio; D014173:Transistors, Electronic
chemical_list: D006108:Graphite