title: Effect of laser annealing on photoluminescence properties of phosphorus implanted ZnO nanorods.
abstract: The effect of the nanosecond laser annealing on the photoluminescence (PL) property of phosphorus ions (P(+)) implanted ZnOnanorods (NRs) has been investigated. The nanosecond laser annealing was performed with the third harmonic of a Q-switched Nd:YAG laser (355nm, 10ns/pulse) at a fluence of 100mJ/cm(2). It turned out that nanosecond laser annealing is more effective in the recovery of the PL property compared with the thermal annealing using an electric furnace. As the results, the I-V characteristics of the p-n homojunctions along ZnO NRs showed rectifying property with a threshold voltage of approximately 6V.
authors: Department of Electrical Engineering, Kyushu University,744, Motooka, Fukuoka, 819-0395, Japan. shimogaki@laserlab.ees.kyushu-u.ac.jp
authors: Tetsuya
authors: T
authors: Shimogaki
authors: Kota
authors: K
authors: Okazaki
authors: Daisuke
authors: D
authors: Nakamura
authors: Mitsuhiro
authors: M
authors: Higashihata
authors: Tanemasa
authors: T
authors: Asano
authors: Tatsuo
authors: T
authors: Okada