title: Polarization-insensitive subwavelength grating reflector based on a semiconductor-insulator-metal structure.
abstract: We present a polarization-insensitive subwavelength grating reflector based on a semiconductor-insulator-metal structure. The polarization-insensitive characteristic originates from the combined effect of the TM-polarized high-reflectivity high-index-contrast subwavelength grating and the TE-polarized metallic (Au) subwavelength grating with the addition of the insulator layer. The overlapped high reflectivity (>99.5%) bandwidth between the transverse electric polarization and the transverse magnetic polarization is 89 nm. This polarization-insensitive subwavelength grating reflector can be used in the applications without a preferred polarization.
authors: State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, CAS, Beijing 100083, China.
authors: Anjin
authors: A
authors: Liu
authors: Feiya
authors: F
authors: Fu
authors: Yufei
authors: Y
authors: Wang
authors: Bin
authors: B
authors: Jiang
authors: Wanhua
authors: W
authors: Zheng