title: Electrochemical and galvanic fabrication of a magnetoelectric composite sensor based on InP.
abstract: : A process chain for a magnetoelectric device based on porous InP will be presented using only chemical, electrochemical, photoelectrochemical, photochemical treatments and the galvanic deposition of metals in high-aspect-ratio structures. All relevant process steps starting with the formation of a self-ordered array of current-line oriented pores followed by the membrane fabrication and a post-etching step, as well as the galvanic metal filling of membrane structures are presented and discussed. The resistivity of a porous InP structure could be drastically increased and, thus, the piezoelectric performance of the porous InP structure. The developed galvanic Ni filling process is capable to homogeneously fill high aspect-ratio membranes.
authors: Institute for Materials Science, Christian-Albrechts-University of Kiel, Kaiserstrasse 2, Germany. mdg@tf.uni-kiel.de.
authors: Mark-Daniel
authors: MD
authors: Gerngross
authors: Jürgen
authors: J
authors: Carstensen
authors: Helmut
authors: H
authors: Föll