title: Graphene-based flexible and stretchable thin film transistors.
abstract: Graphene has been attracting wide attention owing to its superb electronic, thermal and mechanical properties. These properties allow great applications in the next generation of optoelectronics, where flexibility and stretchability are essential. In this context, the recent development of graphene growth/transfer and its applications in field-effect transistors are involved. In particular, we provide a detailed review on the state-of-the-art of graphene-based flexible and stretchable thin film transistors. We address the principles of fabricating high-speed graphene analog transistors and the key issues of producing an array of graphene-based transistors on flexible and stretchable substrates. It provides a platform for future work to focus on understanding and realizing high-performance graphene-based transistors.
authors: SKKU Advanced Institute of Nanotechnology (SAINT), Center for Human Interface Nano Technology (HINT), School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea.
authors: Chao
authors: C
authors: Yan
authors: Jeong Ho
authors: JH
authors: Cho
authors: Jong-Hyun
authors: JH
authors: Ahn
mesh_terms: D004129:Dimethylpolysiloxanes / Q000737:chemistry; D006108:Graphite / Q000737:chemistry*; D019904:Polymethyl Methacrylate / Q000737:chemistry; D012822:Silicon Dioxide / Q000737:chemistry; D014173:Transistors, Electronic
chemical_list: D004129:Dimethylpolysiloxanes; C013830:baysilon; D012822:Silicon Dioxide; D006108:Graphite; D019904:Polymethyl Methacrylate