title: Copper-selective electrochemical filling of macropore arrays for through-silicon via applications.
abstract: In this article, the physico-chemical and electrochemical conditions of through-silicon via formation were studied. First, macropore arrays were etched through a low doped n-type silicon wafer by anodization under illumination into a hydrofluoric acid-based electrolyte. After electrochemical etching, 'almost' through-silicon macropores were locally opened by a backside photolithographic process followed by anisotropic etching. The 450 × 450-μm² opened areas were then selectively filled with copper by a potentiostatic electrochemical deposition. Using this process, high density conductive via (4.5 × 105 cm-²) was carried out. The conductive paths were then electrically characterized, and a resistance equal to 32 mΩ/copper-filled macropore was determined.
authors: Université François Rabelais de Tours, GREMAN UMR CNRS 7347, 16 Rue Pierre et Marie Curie, BP 7155, Tours Cedex 2, 37071, France. thomas.defforge@univ-tours.fr.
authors: Thomas
authors: T
authors: Defforge
authors: Jérôme
authors: J
authors: Billoué
authors: Marianne
authors: M
authors: Diatta
authors: François
authors: F
authors: Tran-Van
authors: Gaël
authors: G
authors: Gautier