title: Measuring nanolayer profiles of various materials by evanescent light technique.
abstract: The evanescent light photon extraction efficiency of insulator, semiconductor and conductor amorphous nanolayers deposited on glass waveguides was evaluated from Differential Evanescent Light Intensity measurements. The Differential Evanescent Light Intensity technique uses the evanescent field scattered by the deposited nanolayer, enabling nanometer thickness profiling due to the high inherent dark background contrast. The results show that the effective evanescent photon penetration depth increases from metal to semiconductor and then to insulating layers, establishing thus the effective photon-material interaction length for the various materials classes.
authors: Photonics Laboratory, EE Department, Holon Institute of Technology, 52 Golomb Str.Holon, Israel- 58102.
authors: Nina
authors: N
authors: Mirchin
authors: Boris
authors: B
authors: Apter
authors: Igor
authors: I
authors: Lapsker
authors: V
authors: V
authors: Fogel
authors: Uri
authors: U
authors: Gorodetsky
authors: Simona A
authors: SA
authors: Popescu
authors: Aaron
authors: A
authors: Peled
authors: Gianina
authors: G
authors: Popescu-Pelin
authors: Gabriela
authors: G
authors: Dorcioman
authors: Liviu
authors: L
authors: Duta
authors: Andrei
authors: A
authors: Popescu
authors: Ion N
authors: IN
authors: Mihailescu