title: Low-voltage SnO₂ nanowire transistors gated by solution-processed chitosan-based proton conductors.
abstract: Recently, a bioprotonic field-effect transistor with chitosan nanowire channel was demonstrated [Nat. Commun., 2011, 2, 476]. Here, it is interesting to find that solution-processed chitosan films with a large electric-double-layer (EDL) specific capacitance can also be used as the gate dielectrics for low-voltage individual SnO(2) nanowire transistors. The field-effect electron mobility, current on/off ratio and sub-threshold slope of such a hybrid SnO(2) nanowire device is estimated to be 128 cm(2) V(-1) s(-1), 2.3 × 10(4) and 90 mV per decade, respectively. Such low-voltage nanowire EDL transistors gated by chitosan-based proton conductors are promising for nanosensors and bioelectronics.
authors: Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, State Key Laboratory for Chemo/Biosensing and Chemometrics, Hunan University, P. R. China.
authors: Huixuan
authors: H
authors: Liu
authors: Qing
authors: Q
authors: Wan
mesh_terms: D048271:Chitosan / Q000737:chemistry*; D004553:Electric Conductivity; D004566:Electrodes; D053770:Nanowires / Q000737:chemistry*; D011522:Protons; D017971:Tin Compounds / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D011522:Protons; D017971:Tin Compounds; C109984:indium tin oxide; D048271:Chitosan; C045358:stannic oxide