title: The relationship between hydrogen and paramagnetic defects in thin film silicon irradiated with 2 MeV electrons.
abstract: After irradiation of hydrogenated amorphous and microcrystalline silicon (a-Si:H and μc-Si:H) with 2 MeV electrons at 100 K, we observe satellite-like components close to the dominating electron spin resonance (ESR) signal of these materials. The satellites overlap with the commonly observed dangling bond resonance and are proposed to originate from a hyperfine interaction with the nuclear magnetic moment of hydrogen atoms in a-Si:H and μc-Si:H. Our present study is focused on the verification of this hypothesis. Equivalent hydrogenated and deuterated a-/μc-Si:H/D materials have been investigated with ESR before and after 2 MeV electron bombardment. From the difference between ESR spectra of hydrogenated and deuterated samples we identify the doublet structure in the ESR spectra as a hyperfine pattern of hydrogen-related paramagnetic centers. The observations of H-related paramagnetic centers in a-/μc-Si:H are of particular interest in view of metastability models of a-Si:H, which include H-related complexes as precursors for the stabilization of the metastable Si dangling bonds. The nature of the observed center is discussed in the light of known H-related complexes in crystalline Si and suggested H-related dangling bonds in a-Si:H.
authors: Forschungszentrum Jülich, Jülich, Germany. o.astakhov@fz-juelich.de
authors: O
authors: O
authors: Astakhov
authors: R
authors: R
authors: Carius
authors: Yu
authors: Y
authors: Petrusenko
authors: V
authors: V
authors: Borysenko
authors: D
authors: D
authors: Barankov
authors: F
authors: F
authors: Finger