title: Diffusion of co-sputtered metals as bonding materials for 3D interconnects during thermal treatments.
abstract: Diffusion behaviors of co-sputtered metals during thermal treatments were investigated, where these co-sputtered metals can be used as bonding materials for 3D Interconnects. In this paper, we report the diffusion behaviors and discuss the diffusion mechanisms of co-sputtered metals before and after annealing. Atom and vacancy volume, vacancy formation energy, and activation energy are proposed to explain the diffusion direction and diffusion rate among different co-sputtered metals. Based on the excellent bonding performance of this method, Cu/metal co-sputtering bonding is considered as a potential candidate for advanced bonding technology.
authors: Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan.
authors: S Y
authors: SY
authors: Hsu
authors: H Y
authors: HY
authors: Chen
authors: K N
authors: KN
authors: Chen