title: Passively Q-switched microchip Er, Yb:YAl3(BO3)4 diode-pumped laser.
abstract: We report, for the first time to our knowledge, a diode-pumped cw and passively Q-switched microchip Er, Yb:YAl(3)(BO(3))(4) laser. A maximal output power of 800 mW at 1602 nm in the cw regime was obtained at an absorbed pump power of 7.7 W. By using Co(2+):MgAl(2)O(4) as a saturable absorber, a TEM(00)-mode Q-switched average output power of 315 mW was demonstrated at 1522 nm, with pulse duration of 5 ns and pulse energy of 5.25 μJ at a repetition rate of 60 kHz.
authors: Center for Optical Materials and Technologies, Belarusian National Technical University, 65 Nezavisimosti Avenue, Building 17, Minsk, Belarus. VEKisel@bntu.by
authors: V E
authors: VE
authors: Kisel
authors: K N
authors: KN
authors: Gorbachenya
authors: A S
authors: AS
authors: Yasukevich
authors: A M
authors: AM
authors: Ivashko
authors: N V
authors: NV
authors: Kuleshov
authors: V V
authors: VV
authors: Maltsev
authors: N I
authors: NI
authors: Leonyuk
mesh_terms: D000042:Absorption; D053844:Lasers, Solid-State; D055616:Microtechnology / Q000379:methods*; D013057:Spectrum Analysis; D013696:Temperature