title: Graphene-like metal-on-silicon field-effect transistor.
abstract: This paper presents a field-effect transistor with a channel consisting of a two-dimensional electron gas located at the interface between an ultrathin metallic film of Ni and a p-type Si(111) substrate. The gate length is L = 2 μm, its width is W = 180 μm, and the source-drain separation is 188 μm, the role of the gate dielectric being played by the surface states of the ultrathin metal layer. We have demonstrated that the two-dimensional electron gas channel is modulated by the gate voltage. The dependence of the drain current on the drain voltage has no saturation region, similar to a field-effect transistor based on graphene. The drain current is 2 mA at a drain voltage of 3 V and a gate voltage of 1.07 V, while the transconductance is 0.6 mS for a drain voltage of 6 V and a gate voltage of 1 V. However, the transport in this transistor is not ambipolar, as in graphene, but unipolar.
authors: National Institute for Research and Development in Microtechnologies, 126A Erou Iancu Nicolae Street, R-077190, Voluntari, Ilfov, Romania. mircea.dragoman@imt.ro
authors: M
authors: M
authors: Dragoman
authors: G
authors: G
authors: Konstantinidis
authors: K
authors: K
authors: Tsagaraki
authors: T
authors: T
authors: Kostopoulos
authors: D
authors: D
authors: Dragoman
authors: D
authors: D
authors: Neculoiu