title: Magnetic field enhanced resonant tunneling in a silicon nanowire single-electron-transistor.
abstract: We report fabrication, measurement and simulation of silicon single-electron-transistors made on silicon-on-insulator wafers. At T-2 K, these devices showed clear Coulomb blockade structures. An external perpendicular magnetic field was found to enhance the resonant tunneling peak and was used to predict the presence of two laterally coupled quantum dots in the narrow constriction between the source-drain electrodes. The proposed model and measured experimental data were consistently explained using numerical simulations.
authors: Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300, Taiwan.
authors: K
authors: K
authors: Aravind
authors: M C
authors: MC
authors: Lin
authors: I L
authors: IL
authors: Ho
authors: C S
authors: CS
authors: Wu
authors: Watson
authors: W
authors: Kuo
authors: C H
authors: CH
authors: Kuan
authors: K S
authors: KS
authors: Chang-Liao
authors: C D
authors: CD
authors: Chen