title: Fabrication and electrical characterization of p-Cu2O/n-ZnO heterojunction.
abstract: The conducting metal oxide (ZnO, Cu2O) films were used for fabrication of p-n heterojunction by rf sputtering and electrodeposition techniques respectively. The as synthesized films were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), UV spectroscopy and electrical techniques. The electrical properties of the p-Cu2O/n-ZnO heterojunction were examined using the current-voltage measurements. The current-voltage (I-V) result showed that potential barrier was higher than the turn-on voltage, which was attributed to the presence of the interface defect states. The PN junction parameters such as ideality factor, barrier height, and series resistance were determined using conventional forward bias current-voltage characteristics. The annealing of Cu2O increase the crystallinity size and which enhance the photo current from 1.6 mA/cm2 to 3.7 mA/cm2. The annealing of respective film resulted in a decrease of these parameters with an increase in efficiency of solar cell from 0.14% to 0.3% at 350 degrees C.
authors: Research Centre of Materials Science, Beijing Institute of Technology, Beijing 100081, People's Republic of China.
authors: Sajad
authors: S
authors: Hussain
authors: Chuanbao
authors: C
authors: Cao
authors: Waheed S
authors: WS
authors: Khan
authors: Ghulam
authors: G
authors: Nabi
authors: Zhuo
authors: Z
authors: Chen
authors: Zahid
authors: Z
authors: Usman
authors: Zulfiqar
authors: Z
authors: Ali
authors: Faheem K
authors: FK
authors: Butt
authors: Tariq
authors: T
authors: Mahmood