title: In-situ phosphrous doping in ZnTe nanowires with enhanced p-type conductivity.
abstract: Single-crystalline undoped and phosphrous-doped (P-doped) p-type ZnTe nanowires (NWs) were synthesized via a simple vapor transport and deposition method. Both undoped and P-doped ZnTe nanowires have zinc blende structure and uniform geometry. X-ray diffraction peaks of the P-doped ZnTe nanowires show an obvious shift toward higher diffraction angle as compared with the undoped ZnTe nanowires. X-ray photoelectron spectroscopy confirms the existence of P-dopant in the ZnTe nanowires. Field-effect transistors based on both undoped and P-doped ZnTe nanowires were fabricated and characterized. Electrical measurements demonstrated that P-doping led to an enhancement in ptype conductivity of ZnTe nanowires. A defect reaction mechanism was proposed to explain the p-type behaviors of both undoped and P-doped ZnTe nanowires.
authors: Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, People's Republic of China.
authors: Y L
authors: YL
authors: Cao
authors: Z T
authors: ZT
authors: Liu
authors: L M
authors: LM
authors: Chen
authors: Y B
authors: YB
authors: Tang
authors: L B
authors: LB
authors: Luo
authors: S T
authors: ST
authors: Lee
authors: C S
authors: CS
authors: Lee