title: Characterization of Er in porous Si.
abstract: The fabrication of porous Si-based Er-doped light-emitting devices is a very promising developing field for all-silicon light emitters. However, while luminescence of Er-doped porous silicon devices has been demonstrated, very little attention has been devoted to the doping process itself. We have undertaken a detailed study of this process, examining the porous silicon matrix from several points of view during and after the doping. In particular, we have found that the Er-doping process shows a threshold level which, as evidenced by the cross correlation of the various techniques used, does depend on the sample thickness and on the doping parameters.
authors: Dipartimento di Fisica, Università degli Studi di Cagliari, Cittadella Universitaria, S,P, 8km 0,700, Monserrato, Cagliari 09042, Italy. guido.mula@unica.it.
authors: Guido
authors: G
authors: Mula
authors: Susanna
authors: S
authors: Setzu
authors: Gianluca
authors: G
authors: Manunza
authors: Roberta
authors: R
authors: Ruffilli
authors: Andrea
authors: A
authors: Falqui