title: Note: ε(T) dependence behavior in GaP diodes at high temperatures.
abstract: Temperature behavior of static dielectric constant ε in a base area of GaP diode has been studied by processing its capacity-voltage characteristics in the temperature range 300-575 K. The ε(T) function has been determined to be a monotonic function of temperature with a maximum in high temperature region. The temperature behavior of ε could be explained by the effect of mixed electron-ion mechanism of polarization in wide bandgap III-V semiconductor compounds. Temperature dependences ε(T) and Δε(T) obtained within this work would be useful for developers of high-temperature electronics and thermometry.
authors: V. Lashkaryov Institute of Semiconductor Physics, NAS Ukraine, 76∕78 Zavodskaya St., 73008 Kherson, Ukraine.
authors: V A
authors: VA
authors: Krasnov
authors: S V
authors: SV
authors: Shutov
authors: S Yu
authors: SY
authors: Yerochin