title: Reducing the contact resistance of SiNW devices by employing a heavily doped carrier injection layer.
abstract: Silicon nanowires (SiNWs) are promising building blocks for future electronic devices. In SiNW-based devices, reducing the contact resistance of SiNW-metal as much as possible is critically important. Here we report a simple fabrication approach for SiNW field effect transistors (FETs) with low contact resistances by employing a heavily doped carrier injection layer wrapped around SiNWs at the contact region. Both n- and p-type SiNW-FET devices with carrier injection layers were investigated, the contact resistances were one order smaller than those without carrier injection layers and only contribute less than 14.8% for n-type devices and 11.4% for p-type devices, respectively, to the total resistance. Such low contact resistance guarantees the device characteristics mainly from the channel region of SiNW-based devices.
authors: Nanoscale Physics and Devices Laboratory, Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
authors: Donghua
authors: D
authors: Liu
authors: Zhiwen
authors: Z
authors: Shi
authors: Lianchang
authors: L
authors: Zhang
authors: Congli
authors: C
authors: He
authors: Jing
authors: J
authors: Zhang
authors: Meng
authors: M
authors: Cheng
authors: Rong
authors: R
authors: Yang
authors: Xuezeng
authors: X
authors: Tian
authors: Xuedong
authors: X
authors: Bai
authors: Dongxia
authors: D
authors: Shi
authors: Guangyu
authors: G
authors: Zhang