title: Melting, expansion behavior and electric transport of In-filling in MgO nanotubes.
abstract: By using a one-step approach, In-filled MgO nanotubes with diameters of 200-300 nm and lengths of several micrometers are synthesized. A Gatan heating experiment in a transmission electron microscope (TEM) shows that In-filling begins to melt far below the melting point 156.6 degrees C of In and abnormally shrinks upon increasing temperature above 270 degrees C. Massive In-filled MgO nanotubes were pressed into a disk and its resistance starts dramatically decrease upon increasing temperature above -150 degrees C, suggesting a temperature switch with a protective point -150 degrees C. The expansion and I-V characteristics were discussed.
authors: Wuhan National Laboratory for Optoelectronics (WNLO), School of Physics, Huazhong University of Science and Technology (HUST), Luoyu Road 1037, Wuhan 430074, China.
authors: Y
authors: Y
authors: Fu
authors: M
authors: M
authors: Sun
authors: W W
authors: WW
authors: Tian
authors: J B
authors: JB
authors: Wang
authors: Y H
authors: YH
authors: Gao