title: Enhanced performance of Au/P3HT/ (bilayer dielectrics)/Si thin-film-transistor having gold nanoparticles chemically bonded to P3HT.
abstract: The charge transport enhancement of using poly(3-hexylthiophene) covalently bonded with gold nanoparticles as an active layer in a bottom-gate/top contact, Au/(P3HT)/(bilayer dielectric)/Si OTFT device has been studied. P3HT was synthesized via the modified Grignard metathesis method and functionalized to have a thiol terminal (P3HT(SH)). Gold nanoparticles (AuNPs) with sizes ranging from 2 to 10 nm were then formed via a reduction of HAuCl4 in the presence of P3HT(SH). Compared to the pristine P3HT, the AuNPs-containing P3HT composite materials have a higher energy level of HOMO and a smaller electrochemical bandgap E(g)chem. The smaller bandgap enhances the charge carrier mobility and the higher HOMO energy level indicates a reduced barrier and an increased injection rate for charge carrier at the source contact. Furthermore, the threshold voltage V(T) of AuNPs-containing P3HT samples remain nearly unchanged and their saturation current I(D) and the field-effect mobility are higher. An OTFT device fabricated with a composite sample containing 1.30% AuNPs has a carrier mobility and saturation current nearly two time higher than pristine P3HT.
authors: Department of Chemical Engineering, National Chung Cheng University, Chiayi 621, Taiwan, Republic of China.
authors: Mon-Chi
authors: MC
authors: Wong
authors: Shin-Chi
authors: SC
authors: Yeh
authors: Li-Ko
authors: LK
authors: Chiu
authors: Yen-Heng
authors: YH
authors: Chen
authors: Jeng-Rong
authors: JR
authors: Ho
authors: Raymond Chien-Chao
authors: RC
authors: Tsiang