title: Ultrahigh-sensitivity infrared detection system using an InGaAs p-i-n photodiode with low dielectric polarization noise.
abstract: We developed a highly sensitive infrared photodetection system using an InGaAs p-i-n photodiode. The temperature and data sampling rate dependences of the readout noise were measured to determine the optimum temperature for low-noise detection. The optimum temperature for sampling rates below 100 Hz was 100 K, and the readout noise at 1 Hz was 2.5 e. The readout noise at 1 MHz and 140 K was 49.4 e. The light detection limit of the system was 8.2×10(-19) W at a wavelength of 1.3 μm. The spectral noise densities of a readout circuit were measured in order to determine the origin of noise.
authors: National Institute of information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan. akiba@nict.go.jp
authors: Makoto
authors: M
authors: Akiba
authors: Yoshikazu
authors: Y
authors: Kanai
mesh_terms: D001151:Arsenic / Q000737:chemistry*; D017097:Electric Impedance; D055615:Electrical Equipment and Supplies; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D007259:Infrared Rays; D008027:Light; D055620:Optical Phenomena; D013696:Temperature
chemical_list: D007204:Indium; D005708:Gallium; D001151:Arsenic