title: High-speed silicon modulator based on cascaded microring resonators.
abstract: A high-speed silicon modulator based on cascaded double microring resonators is demonstrated in this paper. The proposed modulator experimentally achieved 40 Gbit/s modulation with an extinction ratio of 3.9 dB. Enhancement of the modulator achieves with an ultra-high optical bandwidth of 0.41 nm, corresponding to 51 GHz, was accomplished by using cascaded double ring structure. The described modulator can provides an ultra-high-speed optical modulation with a further improvement in electrical bandwidth of the device.
authors: State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing, 100083, China.
authors: Yingtao
authors: Y
authors: Hu
authors: Xi
authors: X
authors: Xiao
authors: Hao
authors: H
authors: Xu
authors: Xianyao
authors: X
authors: Li
authors: Kang
authors: K
authors: Xiong
authors: Zhiyong
authors: Z
authors: Li
authors: Tao
authors: T
authors: Chu
authors: Yude
authors: Y
authors: Yu
authors: Jinzhong
authors: J
authors: Yu