Low-resistivity 10 nm diameter magnetic sensors.
Resistivities of 5.4 μΩ·cm were measured in 10-nm-diameter metallic wires. Low resistance is important for interconnections of the future to prevent heating, electromigration, high power consumption, and long RC time constants. To demonstrate application of these wires, Co/Cu/Co magnetic sensors were synthesized with 20-30 Ω and 19% magnetoresistance. Compared to conventional lithographically produced magnetic tunnel junction sensors, these structures offer facile fabrication and over 2 orders of magnitude lower resistances due to smooth sidewalls from in situ templated chemical growth.
Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, USA.
Mazin M
MM
Maqableh
Xiaobo
X
Huang
Sang-Yeob
SY
Sung
K Sai Madhukar
KS
Reddy
Gregory
G
Norby
R H
RH
Victora
Bethanie J H
BJ
Stadler