Coherent atomic and electronic heterostructures of single-layer MoS2.
Nanoscale heterostructures with quantum dots, nanowires, and nanosheets have opened up new routes toward advanced functionalities and implementation of novel electronic and photonic devices in reduced dimensions. Coherent and passivated heterointerfaces between electronically dissimilar materials can be typically achieved through composition or doping modulation as in GaAs/AlGaAs and Si/NiSi or heteroepitaxy of lattice matched but chemically distinct compounds. Here we report that single layers of chemically exfoliated MoS(2) consist of electronically dissimilar polymorphs that are lattice matched such that they form chemically homogeneous atomic and electronic heterostructures. High resolution scanning transmission electron microscope (STEM) imaging reveals the coexistence of metallic and semiconducting phases within the chemically homogeneous two-dimensional (2D) MoS(2) nanosheets. These results suggest potential for exploiting molecular scale electronic device designs in atomically thin 2D layers.
Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542. g.eda@nus.edu.sg
Goki
G
Eda
Takeshi
T
Fujita
Hisato
H
Yamaguchi
Damien
D
Voiry
Mingwei
M
Chen
Manish
M
Chhowalla
D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D008982:Molybdenum / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D013455:Sulfur / Q000737:chemistry*; D013499:Surface Properties
D046911:Macromolecular Substances; D013455:Sulfur; D008982:Molybdenum