Nanoindentation of GaSe thin films.
The structural and nanomechanical properties of GaSe thin films were investigated by means of X-ray diffraction (XRD) and nanoindentation techniques. The GaSe thin films were deposited on Si(111) substrates by pulsed laser deposition. XRD patterns reveal only the pure (000 l)-oriented reflections originating from the hexagonal GaSe phase and no trace of any impurity or additional phases. Nanoindentation results exhibit discontinuities (so-called multiple 'pop-in' events) in the loading segments of the load-displacement curves, and the continuous stiffness measurements indicate that the hardness and Young's modulus of the hexagonal GaSe films are 1.8 ± 0.2 and 65.8 ± 5.6 GPa, respectively.
Department of Materials Science and Engineering, I-Shou University, Main Campus No,1, Sec, 1, Syuecheng Rd,, Dashu District, Kaohsiung, 84001, Taiwan. srjian@gmail.com.
Sheng-Rui
SR
Jian
Shin-An
SA
Ku
Chih-Wei
CW
Luo
Jenh-Yih
JY
Juang