Remarkable enhancement of hole transport in top-gated N-type polymer field-effect transistors by a high-k dielectric for ambipolar electronic circuits.
A remarkable enhancement of p-channel properties is achieved in initially n-channel dominant ambipolar P(NDI2OD-T2) organic field-effect transistors (OFETs) by the use of the fluorinated high-k dielectric P(VDF-TrFE). An almost two orders of magnitude increase in hole mobility (~0.11 cm(2) V(-1) s(-1) ) originates from a strong interface modification at the semiconductor/dielectric interface, which provides high-performance complementary-like inverters and ring oscillator circuits.
Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeongno, Yuseong-gu, Daejeon 305-700, Republic of Korea. kangjun100@gmail.com
Kang-Jun
KJ
Baeg
Dongyoon
D
Khim
Soon-Won
SW
Jung
Minji
M
Kang
In-Kyu
IK
You
Dong-Yu
DY
Kim
Antonio
A
Facchetti
Yong-Young
YY
Noh
D004583:Electrons; D005461:Fluorine / Q000737:chemistry; D011108:Polymers / Q000737:chemistry*; D019904:Polymethyl Methacrylate / Q000737:chemistry; D011789:Quantum Theory; D014173:Transistors, Electronic
D011108:Polymers; D005461:Fluorine; D019904:Polymethyl Methacrylate