Forming mechanism of the bipolar resistance switching in double-layer memristive nanodevices.
To initiate resistance switching phenomena, it is usually necessary to apply a strong electric field to a sample. This forming process poses very serious obstacles in real nanodevice applications. In unipolar resistance switching (URS), it is well known that the forming originates from soft dielectric breakdown. However, the forming in bipolar resistance switching (BRS) is poorly understood. In this study, we investigated the forming processes in Pt/Ta₂O₅/TaOx/Pt and Pt/TaOx/Pt nanodevices, which showed BRS and URS, respectively. By comparing the double- and single-layer systems, we were able to observe differences in the BRS and URS forming processes. Using computer simulations based on an 'interface-modified random circuit breaker network model', we could explain most of our experimental observations. This success suggests that the BRS forming in our Pt/Ta₂O₅/TaOx/Pt double-layer system can occur via two processes, i.e., polarity-dependent resistance switching in the Ta₂O₅ layer and soft dielectric breakdown in the TaOx layer. This forming mechanism can be used to improve the performance of BRS devices. For example, we could improve the endurance properties of Pt/Ta₂O₅/TaOx/Pt cells by using a small forming voltage.
IBS-Research Center for Functional Interfaces, Seoul National University, Seoul 151-747, Republic of Korea.
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SB
Lee
H K
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Yoo
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K
Kim
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JS
Lee
Y S
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Kim
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S
Sinn
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D
Lee
B S
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Kang
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Kahng
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Noh