Fabrication of high-resolution large-area patterns using EUV interference lithography in a scan-exposure mode.
Limited beam spot size is a major limitation of interference lithography. This limits the area of patterning and reduces the pattern homogeneity. We describe a scanning exposure technique to circumvent this problem. We show the generation of uniform and seamless gratings with half-pitches down to 35 nm over an area of several mm(2) using EUV interference lithography. The presented technique offers a fast and cost-effective method of fabricating one- and two-dimensional periodic nanostructures with improved uniformity and increased patterning area.
Laboratory for Micro- and Nanotechnology, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland. li.wang@psi.ch
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Wang
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Solak
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Ekinci