Switching mechanisms in flexible solution-processed TiO₂ memristors.
Memristors are emerging as unique electrical devices with potential applications in memory, reconfigurable logic and biologically inspired computing. Due to the novelty of these devices, the complete details of their switching mechanism is not yet well established. In this work, the switching mechanism of our solution-processed titanium dioxide-based memristor is investigated by studying how variations in the device area and film thickness affect electrical behavior and correlating these behavioral changes to proposed switching mechanisms. The conduction path of the switching is also investigated through electrical characterization of devices both before and after physically cutting the devices in half, as well as through infrared imaging of the devices during operation. The results suggest that the electrical behavior of these devices is dominated by a localized, charge-based phenomenon that exhibits a dependence on device area.
Semiconductor and Dimensional Metrology Division, Physical Measurement Laboratory, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899, USA. joseph.tedesco@nist.gov
J L
JL
Tedesco
L
L
Stephey
M
M
Hernández-Mora
C A
CA
Richter
N
N
Gergel-Hackett
D039301:Computers, Molecular; D055590:Electromagnetic Phenomena; D004867:Equipment Design; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000295:instrumentation*; D014025:Titanium / Q000737:chemistry*
C009495:titanium dioxide; D014025:Titanium