Highly flexible MoS2 thin-film transistors with ion gel dielectrics.
Molybdenum disulfide (MoS(2)) thin-film transistors were fabricated with ion gel gate dielectrics. These thin-film transistors exhibited excellent band transport with a low threshold voltage (<1 V), high mobility (12.5 cm(2)/(V·s)) and a high on/off current ratio (10(5)). Furthermore, the MoS(2) transistors exhibited remarkably high mechanical flexibility, and no degradation in the electrical characteristics was observed when they were significantly bent to a curvature radius of 0.75 mm. The superior electrical performance and excellent pliability of MoS(2) films make them suitable for use in large-area flexible electronics.
Department of Applied Physics, Waseda University, Tokyo 169-8555, Japan.
Jiang
J
Pu
Yohei
Y
Yomogida
Keng-Ku
KK
Liu
Lain-Jong
LJ
Li
Yoshihiro
Y
Iwasa
Taishi
T
Takenobu