One-volt operation of high-current vertical channel polymer semiconductor field-effect transistors.
We realize a vertical channel polymer semiconductor field effect transistor architecture by confining the organic material within gratings of interdigitated trenches. The geometric space savings of a perpendicular channel orientation results in devices sourcing areal current densities in excess of 40 mA/cm(2), using a one-volt supply voltage, and maintaining near-ideal device operating characteristics. Vertical channel transistors have a similar electronic mobility to that of planar devices using the same polymer semiconductor, consistent with a molecular reorientation within confining trenches we understand through X-ray scattering measurements.
Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, USA.
Danvers E
DE
Johnston
Kevin G
KG
Yager
Chang-Yong
CY
Nam
Benjamin M
BM
Ocko
Charles T
CT
Black
D004553:Electric Conductivity; D055664:Electrochemical Techniques; D011108:Polymers / Q000737:chemistry*; D012666:Semiconductors; D014173:Transistors, Electronic
D011108:Polymers