title: Sub 50 nm nano-patterns with carbon based spin-on organic hardmask.
abstract: Carbon based spin-on organic hardmask (C-SOH) was used as an imprint resin to fabricate sub 50 nm sized patterns. Imprinting of C-SOH was done with a polyurethaneacrylate (PUA) stamp. Patternability and etch resistance of the C-SOH resin was compared to poly(methyl methacrylate) (PMMA). C-SOH can be patterned at the nanosize using imprint lithography and exhibits superior etch resistance, especially for F-based plasmas. Due to the poor etch resistance of imprint resin such as PMMA, it is seldom used as an etch mask to form nano-structures by etching the Si3N4 layer. However, such a nano-structure was able to be formed by etching the Si3N4 layer using C-SOH as an etch mask.
authors: Department of Materials Science and Engineering, Korea University, Anam-Dong 5-Ga, Seongbuk-Gu, Seoul 136-713, Korea.
authors: Ju-Hyeon
authors: JH
authors: Shin
authors: Ki-Yeon
authors: KY
authors: Yang
authors: Kang-Soo
authors: KS
authors: Han
authors: Hyeong-Seok
authors: HS
authors: Kim
authors: Heon
authors: H
authors: Lee