title: Link between O2SiH infrared band amplitude and porous silicon photoluminescence during ambient O3 oxidation.
abstract: We carefully evaluate how porous silicon (pSi) surface oxidation by ozone (O(3)) and the resulting changes in nanocrystallite surface chemistries (e.g., SiOSi, SiH(x) (x = 1-3), O(y)SiH (y = 1-2), and SiOH) influence the pSi photoluminescence  (PL). We discover a relationship between the pSi PL and the O(2)SiH band amplitude.
authors: Department of Chemistry, Natural Sciences Complex, University at Buffalo, The State University of New York, Buffalo, NY 14260-3000 USA.
authors: Caley A
authors: CA
authors: Caras
authors: Justin M
authors: JM
authors: Reynard
authors: Randi E
authors: RE
authors: Deuro
authors: Frank V
authors: FV
authors: Bright