title: Effect of carrier injection stress in thin film solar cells by impedance spectroscopy.
abstract: In amorphous silicon solar cells, degradation is directly related to V(oc), FF and cell performance. The dependence of the stability of thin film amorphous silicon solar cells is studied in terms of the volume fraction of B2H6 in the p-layer. When the volume fraction of B2H6 is increased by an order of magnitude, the doping-induced defects tend to increase quite rapidly. Low-doped p-type a-SiO(x) layers had better initial properties but rapidly degraded. Heavily doped p-type a-SiO(x) layers had lower initial properties but displayed better stability. The improvement in stability is explained in conjunction with the capacitance and resistance values of impedance spectroscopy. When the B2H6 gas flow rate is increased, the cell is degraded showing a capacitance decay decrease from 51.75% to less than 18.18%. In addition, the increase in the resistance decreased from 90.90% to 11.73%.
authors: School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Korea.
authors: Seungman
authors: S
authors: Park
authors: Sunhwa
authors: S
authors: Lee
authors: Jinjoo
authors: J
authors: Park
authors: Youngkuk
authors: Y
authors: Kim
authors: Kichan
authors: K
authors: Yoon
authors: Chonghoon
authors: C
authors: Shin
authors: Seungsin
authors: S
authors: Baek
authors: Youn-Jung
authors: YJ
authors: Lee
authors: Junsin
authors: J
authors: Yi