title: Extreme ultra-violet resists development concepts and performances.
abstract: Recently published experimental results indicate that current extreme ultra-violet lithography (EUVL) patterning process seems to be very hard to meet the device manufacturing specification goals, such as resolution, line-width roughness, and sensitivity (RLS) simultaneously. To overcome trade-off limitations between RLS performances of resist, we have approached the problem in several ways. Regarding materials, to make a uniform resist film we applied living radical polymerization and purification to obtain evenly interacting polymer chains. To obtain perfectly miscible resist components, such as polymer, photo acid generator (PAG) and quencher, we have optimized their structures to have similar polarity range. Acid diffusivity factors are also controlled by the resist components properties, including polymer T(g) and photo-acid polarity. In EUVL process, we applied surfactant rinse process to reduce line-width roughness and pattern collapse. In this paper, we discuss the performance of our EUV according to our material development concepts, that is, resist film homogeneity and acid diffusion control in order to meet the device manufacturing specification goals, such as resolution, line-width roughness (LWR), and sensitivity.
authors: Electro-Materials Business Department, Dongjin Semichem Co. Ltd., Gyunggido 445-935, Korea.
authors: Jae Woo
authors: JW
authors: Lee
authors: Jeongsik
authors: J
authors: Kim
authors: Jaehyun
authors: J
authors: Kim