title: Epitaxial growth of boron-doped graphene by thermal decomposition of B4C.
abstract: We grew graphene by thermal decomposition of B(4)C and investigated its features by high-resolution transmission electron microscope observations. At temperatures higher than 1600 °C in a vacuum, B(4)C decomposes and graphene forms epitaxially on its surface. The number and the morphology of the graphene layers depend on the surface orientation. An electron diffraction technique revealed the presence of a superstructure with a two-times larger unit cell, which is consistent with the structure of BC(3). We have directly confirmed boron in the graphene layers by electron energy loss spectroscopy measurements and boron-mapping experiments.
authors: Department of Applied Chemistry, Graduate School of Engineering, Nagoya University, Chikusa-ku, Nagoya-shi, Aichi-ken, Japan. w_norimatsu@esi.nagoya-u.ac.jp
authors: Wataru
authors: W
authors: Norimatsu
authors: Koichiro
authors: K
authors: Hirata
authors: Yuta
authors: Y
authors: Yamamoto
authors: Shigeo
authors: S
authors: Arai
authors: Michiko
authors: M
authors: Kusunoki