title: Current stress induced electrical instability in transparent zinc tin oxide thin-film transistors.
abstract: Transparent zinc tin oxide thin-film transistors (ZTO-TFTs) [Zn:Sn = 4:1-2:1] have been fabricated so as to estimate the electrical instability under constant current stress. The relative intensity of the drain current noise power spectra density has been shown to have a typical 1/f-noise character, and it is implied that the mobility fluctuation in ZTO-TFT [Zn:Sn = 4:1] can be enhanced by a short-range ordering in amorphous Zn-Sn-oxide, causing a larger shift of the threshold voltage (deltaV(th)).
authors: New Devices and Materials Research Group, ETRI, Daejeon 305-700, Korea.
authors: Woo-Seok
authors: WS
authors: Cheong
authors: Jae-Heon
authors: JH
authors: Shin
authors: Sung Mook
authors: SM
authors: Chung
authors: Chi-Sun
authors: CS
authors: Hwang
authors: Jeong-Min
authors: JM
authors: Lee
authors: Jong-Ho
authors: JH
authors: Lee