title: Investigation of crystallization behavior of CIG-Se bi-layer thin films.
abstract: Copper indium gallium diselenide (CIGSe) thin film was fabricated via a thermal treatment of GIG-Se bi-layer thin films. A CIG layer was prepared first, by a chemical solution deposition (CSD) process. The Se layer was deposited separately on the CIG layer by evaporation. The GIG-Se bi-layer then underwent a thermal treatment to cause a reaction between the two layers. In order to investigate the mechanism of CIG-Se bi-layer crystallization, the thermal treatment temperature was varied. The properties of the prepared CIGSe2 thin films were analyzed using X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive spectrometry (EDS), and UV-visible spectrophotometry.
authors: Green Energy Research Division, Daegu Gyeongbuk Institute of Science and Technology, Daegu 711-873, Korea.
authors: Mi Sun
authors: MS
authors: Park
authors: Shi-Joon
authors: SJ
authors: Sung
authors: Dae-Hwan
authors: DH
authors: Kim
authors: Jin-Kyu
authors: JK
authors: Kang