title: Top-down processed silicon nanowires for thermoelectric applications.
abstract: 50 nm wide n-type silicon nanowires have been manufactured by using a top-down process in order to investigate the thermoelectric properties of silicon nanowire. Nanowire test structures with platinum heaters and temperature sensors were fabricated. The extracted temperature coefficient of resistance (TCR) of the temperature sensors was 786.6 PPM/K. Also, the extracted Seebeck coefficient and power factor of the 50 nm wide phosphorus doped n-type silicon nanowires were -118 miroV/K and 2.16 mW x K(-2) x m(-1).
authors: Convergence Components and Materials Research Laboratory, ETRI, Daejeon 305-700, Korea.
authors: Moongyu
authors: M
authors: Jang
authors: Youngsam
authors: Y
authors: Park
authors: Younghoon
authors: Y
authors: Hyun
authors: Myungsim
authors: M
authors: Jun
authors: Sung-Jin
authors: SJ
authors: Choi
authors: Taehyung
authors: T
authors: Zyung
authors: Jong-Dae
authors: JD
authors: Kim