title: Ge oxidation in the remaining cores of Si(1-x)Ge(x) nanowires after prolonged oxidation.
abstract: For this investigation of the Ge behavior of condensed Si(1-y)Ge(y) (y > x) cores during the oxidation of Si(1-x)Ge(x) nanowires, Si(1-x)Ge(x) nanowires were grown in a tube furnace by the vapor-liquid-solid method and thermally oxidized. The test results were characterized using several techniques of transmission electron microscopy. The two types of Ge condensation are related to the diameter and Ge content of the nanowires. The consumption of Si atoms in prolonged oxidation caused the condensed SiGe cores to become Ge-only cores; and the continuous oxidation resulted in the oxidation of the Ge cores. The oxidation of Ge atoms was confirmed by scanning transmission electron microscopy.
authors: Department of Materials Science and Engineering, Yonsei University, 134 Shinchon, Seodaemun, Seoul 120-749, Republic of Korea.
authors: Sang-Yeon
authors: SY
authors: Kim
authors: Sun-Wook
authors: SW
authors: Kim
authors: Dae-Hong
authors: DH
authors: Ko
authors: Hoo-Jeong
authors: HJ
authors: Lee