title: Chemical vapor deposition of porous GaN particles on silicon.
abstract: We present a technique for the direct deposition of nanoporous GaN particles on Si substrates without requiring any post-growth treatment. The internal morphology of the nanoporous GaN particles deposited on Si substrates by using a simple chemical vapor deposition approach was investigated, and straight nanopores with diameters ranging between 50 and 100 nm were observed. Cathodoluminescence characterization revealed a sharp and well-defined near band-edge emission at ∼365 nm. This approach simplifies other methods used for this purpose, such as etching and corrosion techniques that can damage the semiconductor structure and modify its properties.
authors: Física i Cristallografia de Materials i Nanomaterials-FiCMA-FiCNA, Universitat Rovira i Virgili, Campus Sescelades, c/Marcel·lí Domingo s/n, 43007 Tarragona, Spain. joanjosep.carvajal@urv.cat
authors: Joan J
authors: JJ
authors: Carvajal
authors: Oleksandr V
authors: OV
authors: Bilousov
authors: Dominique
authors: D
authors: Drouin
authors: Magdalena
authors: M
authors: Aguiló
authors: Francesc
authors: F
authors: Díaz
authors: J Carlos
authors: JC
authors: Rojo