title: Single-photon emission from electrically driven InP quantum dots epitaxially grown on CMOS-compatible Si(001).
abstract: The heteroepitaxy of III-V semiconductors on silicon is a promising approach for making silicon a photonic platform. Mismatches in material properties, however, present a major challenge, leading to high defect densities in the epitaxial layers and adversely affecting radiative recombination processes. However, nanostructures, such as quantum dots, have been found to grow defect-free even in a suboptimal environment. Here we present the first realization of indium phosphide quantum dots on exactly oriented Si(001), grown by metal-organic vapour-phase epitaxy. We report electrically driven single-photon emission in the red spectral region, meeting the wavelength range of silicon avalanche photodiodes' highest detection efficiency.
authors: Institut für Halbleiteroptik und Funktionelle Grenzflächen and Research Center SCoPE, Universität Stuttgart, Allmandring 3, D-70569 Stuttgart, Germany. m.wiesner@ihfg.uni-stuttgart.de
authors: M
authors: M
authors: Wiesner
authors: W-M
authors: WM
authors: Schulz
authors: C
authors: C
authors: Kessler
authors: M
authors: M
authors: Reischle
authors: S
authors: S
authors: Metzner
authors: F
authors: F
authors: Bertram
authors: J
authors: J
authors: Christen
authors: R
authors: R
authors: Roßbach
authors: M
authors: M
authors: Jetter
authors: P
authors: P
authors: Michler