title: Stability-improved organic n-channel thin-film transistors with nm-thin hydrophobic polymer-coated high-k dielectrics.
abstract: We report on the fabrication of N,N'-ditridecyl-perylene-3,4:9,10-tetracarboxylic diimide-C13 (PTCDI-C13), n-channel organic thin-film transistors (OTFTs) with 30 nm Al(2)O(3) whose surface has been un-modified or modified with hexamethyldisilazane (HMDS) and thin hydrophobic CYTOP. Among all the devices, the OTFTs with CYTOP-modified dielectrics exhibit the most superior device performance and stability. The optimum post-annealing temperature for organic n-channels on CYTOP was also found to be as low as 80 °C, although the post-annealing was previously implemented at 120-140 °C for PTCDI domain growth in general. The low temperature of 80 °C hardly damages the CYTOP/n-channel organic interface which is deformed at a temperature higher than the glass transition temperature of CYTOP (∼110 °C). The pentacenequinone passivation layer turned out to be helpful to keep the interfacial trap density minimum, according to the photo-excited charge collection spectroscopy results for our 80 °C-annealed OTFTs with CYTOP-modified dielectrics.
authors: Institute of Physics and Applied Physics, Yonsei University, Seoul, Republic of Korea.
authors: Ji Hoon
authors: JH
authors: Park
authors: Hee Sung
authors: HS
authors: Lee
authors: Junyeong
authors: J
authors: Lee
authors: Kimoon
authors: K
authors: Lee
authors: Gyubaek
authors: G
authors: Lee
authors: Kwan Hyuck
authors: KH
authors: Yoon
authors: Myung M
authors: MM
authors: Sung
authors: Seongil
authors: S
authors: Im