title: Properties of ZnO thin films co-doped with hydrogen and fluorine.
abstract: ZnO films co-doped with fluorine and hydrogen were prepared on Corning glass by radio frequency magnetron sputtering of ZnO targets with varying amounts of ZnF2 in H2/Ar gas mixtures of varying H2 content. The ZnO films' electrical, optical, and structural properties in combination with their compositional properties were investigated. A small addition of H2 to the sputtering gas caused a drastic increase of Hall mobility with a marginal increase in carrier concentration, indicating an effective passivation of grain boundaries due to hydrogenation. For further increase of H2 in sputter gas, the Hall mobility remained at a relatively constant level while the carrier concentration increased steadily. Most of the ZnO films co-doped with fluorine and hydrogen showed average transmittance higher than 83% in the 400-800 nm range, while the average absorption coefficients were lower than 600 cm(-1), implying very low absorption loss in these films. It was discovered that the fabrication of ZnO films with a Hall mobility higher than 40 cm2/Vs and a very low absorption loss in the visible range is possible by co-doping hydrogen and fluorine.
authors: Electronic Materials Center, Korea Institute of Science and Technology, Seoul 136-791, Korea.
authors: Yong Hyun
authors: YH
authors: Kim
authors: Jin Soo
authors: JS
authors: Kim
authors: Jeung-Hyun
authors: JH
authors: Jeong
authors: Jong-Keuk
authors: JK
authors: Park
authors: Young Joon
authors: YJ
authors: Baik
authors: Kyeong-Seok
authors: KS
authors: Lee
authors: Byung-Ki
authors: BK
authors: Cheong
authors: Donghwan
authors: D
authors: Kim
authors: Tae-Yeon
authors: TY
authors: Seong
authors: Won Mok
authors: WM
authors: Kim