title: Effect of lightly doped drain structure on P-channel metal induced lateral crystallization thin film transistors.
abstract: A Lightly Doped Drain (LDD) structure is known to be very effective in preventing hot electrons in modern NMOS transistors. In this work, the lightly doped region was formed in poly TFT by using a separate LDD mask aligned to a gate mask. The misalignment can be calculated to be about 1.5 microm, and depending on the location of the V(d) application between the source and drain, an LDD or Lightly Doped Source (LDS) structure can be realized on the same TFT. In this way, we can make a perfect comparison between these two structures. It turned out that the LDD is mainly responsible for the low leakage current, and no more than 0.5 microm of the lightly doped region is necessary to lower the leakage current down to less than 5 x 10(-11) amps at V(d) = 10 volts. Typically, the on-current of MILC TFT is more than 10(-4) amps, but 2.5 microm LDS decreases it to below 10(-7) amps.
authors: Research Institute of Advanced Materials, College of Engineering, Seoul National University, Gwanak-Gu, Seoul 151-742, Korea.
authors: Se Wan
authors: SW
authors: Son
authors: Chang-Woo
authors: CW
authors: Byun
authors: Sang-Joo
authors: SJ
authors: Lee
authors: Seung-Jae
authors: SJ
authors: Yoon
authors: Seung-Ki
authors: SK
authors: Joo