title: High carrier mobility in single ultrathin colloidal lead selenide nanowire field effect transistors.
abstract: Ultrathin colloidal lead selenide (PbSe) nanowires with continuous charge transport channels and tunable bandgap provide potential building blocks for solar cells and photodetectors. Here, we demonstrate a room-temperature hole mobility as high as 490 cm(2)/(V s) in field effect transistors incorporating single colloidal PbSe nanowires with diameters of 6-15 nm, coated with ammonium thiocyanate and a thin SiO(2) layer. A long carrier diffusion length of 4.5 μm is obtained from scanning photocurrent microscopy (SPCM). The mobility is increased further at lower temperature, reaching 740 cm(2)/(V s) at 139 K.
authors: Department of Physics, University of California, Davis, California 95616, USA.
authors: Rion
authors: R
authors: Graham
authors: Dong
authors: D
authors: Yu