title: Bipolar resistive switching of single gold-in-Ga2O3 nanowire.
abstract: We have fabricated single nanowire chips on gold-in-Ga(2)O(3) core-shell nanowires using the electron-beam lithography techniques and realized bipolar resistive switching characteristics having invariable set and reset voltages. We attribute the unique property of invariance to the built-in conduction path of gold core. This invariance allows us to fabricate many resistive switching cells with the same operating voltage by simple depositing repetitive metal electrodes along a single nanowire. Other characteristics of these core-shell resistive switching nanowires include comparable driving electric field with other thin film and nanowire devices and a remarkable on/off ratio more than 3 orders of magnitude at a low driving voltage of 2 V. A smaller but still impressive on/off ratio of 10 can be obtained at an even lower bias of 0.2 V. These characteristics of gold-in-Ga(2)O(3) core-shell nanowires make fabrication of future high-density resistive memory devices possible.
authors: Department of Materials Science and Engineering, National Tsing Hua University, No. 101, Section 2 Kuang-Fu Road, Hsinchu, 30013, Taiwan, Republic of China.
authors: Chia-Wei
authors: CW
authors: Hsu
authors: Li-Jen
authors: LJ
authors: Chou