title: Al2O3/TiO2 multilayer passivation layers grown at low temperature for flexible organic devices.
abstract: In this study, the permeability of passivation layers consisting of aluminum oxide (Al2O3) and titanium oxide (TiO2) was examined. The films were deposited on poly(ether sulfone) (PES) substrates via electron cyclotron resonance atomic layer deposition (ECR-ALD) at various deposition temperatures. The optimum plasma power and deposition temperature were investigated through measurements of the refractive index and packing density of the Al2O3 and TiO2 films. A buffer layer/multilayer structure was proposed in this study to improve the passivation barrier performance. A low water vapor transmission rate (WVTR) of approximately 5 x 10(-3) g/m2 x day was achieved with two Al2O3/TiO2 stacks with thicknesses of 40 nm deposited at 80 degrees C. Based on the Arrhenius rate equation, the activation energy of water vapor transmission through different passivation structures was examined. The activation energies of Al2O3, Al2O3/TiO2, and two Al2O3/TiO2 stacks with thicknesses of 40 nm were 51.8, 63.9, and 74.7 kJ/mol, respectively.
authors: Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 133-791, Republic of Korea.
authors: Tae-Suk
authors: TS
authors: Kwon
authors: Dae-Yong
authors: DY
authors: Moon
authors: Yeon-Keon
authors: YK
authors: Moon
authors: Woong-Sun
authors: WS
authors: Kim
authors: Jong-Wan
authors: JW
authors: Park