title: Improvement of carrier mobility of top-gated SiC epitaxial graphene transistors using a PVA dielectric buffer layer.
abstract: The effects of treatment with polyvinyl alcohol (PVA) and a dielectric film of HfO(2) on the properties of SiC based epitaxial graphene have been explored and analyzed. We have characterized the carrier mobility of graphene on Si-face and C-face SiC with a layer of HfO(2), with or without an initial PVA treatment on the device active layer. Epitaxial graphene grown on the C-face displays a higher mobility than a film grown on the silicon face. Also, the mobility in the presence of the PVA treatment with HfO(2) dielectric layer has been improved, compared with the mobility after deposition of only gate dielectric: ∼20% in C-face graphene and ∼90% in Si-face graphene. This is a major improvement over the degradation normally observed with dielectric/graphene systems.
authors: Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA. mkk23@cornell.edu
authors: Moonkyung
authors: M
authors: Kim
authors: Jeonghyun
authors: J
authors: Hwang
authors: Lori A
authors: LA
authors: Lepak
authors: Jo-won
authors: JW
authors: Lee
authors: Michael G
authors: MG
authors: Spencer
authors: Sandip
authors: S
authors: Tiwari