title: Low-voltage-driven pentacene thin-film transistors with cross-linked poly(4-vinylphenol)/high-k Bi55b3O15 hybrid dielectric for phototransistor.
abstract: This paper describes the fabrication of pentacene thin-film transistors (TFTs) with an organic/inorganic hybrid gate dielectric, consisting of cross-linked poly(4-vinylphenol) (PVP) and Bi5Nb3O15. A 300-nm-thick Bi5Nb3O15 dielectric film, grown at room temperature, exhibits a high dielectric constant (high-k) value of 40 but has an undesirable interface with organic semiconductors (OSC). To form better interfaces with OSC, a cross-linked PVP dielectric was stacked on the Bi5Nb3O15 dielectric. It is shown that, with the introduction of a hybrid dielectric, our devices not only can be operated at a low voltage (- -5 V) but also have improved electrical characteristics and photoresponse, including a field-effect mobility of 0.72 cm2/V x s, current sub-threshold slopes of 0.29 V/decade, and a photoresponse of 4.84 at a gate bias V(G) = 0 V under 100 mW/cm2 AM 1.5 illumination.
authors: Display and Nanosystem Laboratory, College of Engineering, Korea University, Anam-Dong, Seongbuk-Gu, Seoul 136-713, Republic of Korea.
authors: Seongpil
authors: S
authors: Chang
authors: Myung-Ho
authors: MH
authors: Chung
authors: Jae-Hong
authors: JH
authors: Kwon
authors: Sang-Il
authors: SI
authors: Shin
authors: Tae-Yeon
authors: TY
authors: Oh
authors: Ki-Young
authors: KY
authors: Dong
authors: Seung-Jun
authors: SJ
authors: Lee
authors: Kyung-Hoon
authors: KH
authors: Cho
authors: Sahn
authors: S
authors: Nahm
authors: Byeong-Kwon
authors: BK
authors: Ju