title: Growth mechanism and elemental distribution of beta-Ga2O3 crystalline nanowires synthesized by cobalt-assisted chemical vapor deposition.
abstract: Long beta-Ga2O3 crystalline nanowires are synthesized on patterned silicon substrates using chemical vapor deposition technique. Advanced electron microscopy indicates that the as-grown beta-Ga2O3 nanowires are consisted of poly-crystalline (Co, Ga)O tips and straight crystalline beta-Ga2O3 stems. The catalytic cobalt not only locates at the nanowire tips but diffuses into beta-Ga2O3 nanowire stems several ten nanometers. A solid diffusion growth mechanism is proposed based on the spatial elemental distribution along the beta-Ga2O3 nanowires at nanoscale.
authors: Department of Physics, Boston College, Chestnut Hill, Massachusetts 02467, USA.
authors: Hui
authors: H
authors: Wang
authors: Yucheng
authors: Y
authors: Lan
authors: Jiaming
authors: J
authors: Zhang
authors: Martin A
authors: MA
authors: Crimp
authors: Zhifeng
authors: Z
authors: Ren