title: Effect of rapid thermal annealing on the electrical, optical and structural properties of ZnO-doped In2O3 films grown by linear facing target sputtering.
abstract: We investigated the effect of rapid thermal annealing on the electrical, optical, and structural properties of ZnO-doped In2O3 (ZIO) films grown at different Ar/O2 flow ratios (15/0 and 15/1 sccm) by using linear facing target sputtering. It was found that the ZIO films grown at different Ar/O2, flow ratios showed different electrical and optical behavior with increasing rapid thermal annealing temperature. Synchrotron X-ray scattering examination showed that the different electrical and optical properties of the ZIO films could be attributed to the difference in preferred orientation with an increase in rapid thermal annealing temperature.
authors: Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, 1 Seocheon-Dong, Giheung-Gu, Yongin 446-701, Republic of Korea.
authors: Chung-Ki
authors: CK
authors: Cho
authors: Han-Ki
authors: HK
authors: Kim