title: Characteristics of tin oxide-based thin film transistors prepared by DC magnetron sputtering.
abstract: Here we demonstrate the fabrication of SnO(x) thin-film transistors (TFTs), where SnO(x) thin films are deposited as an active channel layer by DC magnetron sputtering. We analyzed the effects of the oxygen partial pressure ratio and post-deposition heat treatment (PDHT) on the characteristics of the SnO(x) thin films. We found improved performance of the TFTs obtained by using interface modification with the optimized deposition condition of SnO(x) thin films. These results are helpful for fabricating oxide-TFTs, including simple binary oxide semiconductors, as an active channel layer.
authors: Department of Materials Science and Engineering, Hanyang University, 17 Haengdang-Dong, Seoungdong-Ku, Seoul 133-791, Republic of Korea.
authors: Yeon-Keon
authors: YK
authors: Moon
authors: Woong-Sun
authors: WS
authors: Kim
authors: Kyung-Taek
authors: KT
authors: Kim
authors: Se-Young
authors: SY
authors: Shin
authors: Jong-Wan
authors: JW
authors: Park