title: A simple nickel bis(dithiolene) complex as an excellent n-type molecular semiconductor for field-effect transistors.
abstract: A simple nickel bis(dithiolene) complex has been developed as an excellent n-type molecular semiconductor for FETs, with an electron mobility of 0.11 cm(2) V(-1) s(-1) and an on/off ratio of 2 × 10(6) despite its small π-conjugated system. Good FET stability in ambient conditions has also been observed.
authors: Department of Chemistry and Hubei Key Lab on Organic and Polymeric Optoelectronic Materials, Wuhan University, Wuhan 430072, PR China.
authors: Li
authors: L
authors: Qu
authors: Yunlong
authors: Y
authors: Guo
authors: Hao
authors: H
authors: Luo
authors: Cheng
authors: C
authors: Zhong
authors: Gui
authors: G
authors: Yu
authors: Yunqi
authors: Y
authors: Liu
authors: Jingui
authors: J
authors: Qin