title: Electrostatic spin control in InAs/InP nanowire quantum dots.
abstract: Very robust voltage-controlled spin transitions in few-electron quantum dots are demonstrated. Two lateral-gate electrodes patterned on opposite sides of an InAs/InP nanowire are used to apply a transverse electric field and tune orbital energy separation down to level-pair degeneracy. Transport measurements in this regime allow us to demonstrate the breakdown of the standard alternate up/down spin filling scheme and unambiguously show singlet-triplet spin transitions. The strong confinement of the present devices leads to a large energy gain for the observed anomalous spin configurations that exceeds 4 meV. As a consequence, this behavior is well visible even at temperatures exceeding T = 20 K.
authors: NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza S. Silvestro 12, I-56127 Pisa, Italy.
authors: Lorenzo
authors: L
authors: Romeo
authors: Stefano
authors: S
authors: Roddaro
authors: Alessandro
authors: A
authors: Pitanti
authors: Daniele
authors: D
authors: Ercolani
authors: Lucia
authors: L
authors: Sorba
authors: Fabio
authors: F
authors: Beltram
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D004595:Electroplating / Q000379:methods*; D007204:Indium / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D010720:Phosphines / Q000737:chemistry*; D045663:Quantum Dots; D013499:Surface Properties
chemical_list: D001152:Arsenicals; D046911:Macromolecular Substances; D010720:Phosphines; D007204:Indium; C076773:indium arsenide; C090882:indium phosphide