title: Impact of bimetal electrodes on dielectric properties of TiO2 and Al-doped TiO2 films.
abstract: Rutile structured Al-doped TiO(2) (ATO) and TiO(2) films were grown on bimetal electrodes (thin Ru/thick TiN, Pt, and Ir) for high-performance capacitors. The work function of the top Ru layer decreased on TiN and increased on Pt and Ir when it was thinner than ~2 nm, suggesting that the lower metal within the electrodes influences the work function of the very thin Ru layer. The use of the lower electrode with a high work function for bottom electrode eventually improves the leakage current properties of the capacitor at a very thin Ru top layer (≤2 nm) because of the increased Schottky barrier height at the interface between the dielectric and the bottom electrode. The thin Ru layer was necessary to achieve the rutile structured ATO and TiO(2) dielectric films.
authors.affiliation: WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea.
authors.forename: Seong Keun
authors.initials: SK
authors.lastname: Kim
authors.forename: Sora
authors.initials: S
authors.lastname: Han
authors.forename: Woojin
authors.initials: W
authors.lastname: Jeon
authors.forename: Jung Ho
authors.initials: JH
authors.lastname: Yoon
authors.forename: Jeong Hwan
authors.initials: JH
authors.lastname: Han
authors.forename: Woongkyu
authors.initials: W
authors.lastname: Lee
authors.forename: Cheol Seong
authors.initials: CS
authors.lastname: Hwang
mesh_terms: D000535:Aluminum / Q000737:chemistry*; D004560:Electricity; D004566:Electrodes; D010984:Platinum / Q000737:chemistry; D012428:Ruthenium / Q000737:chemistry; D014025:Titanium / Q000737:chemistry*
chemical_list: C009495:titanium dioxide; D010984:Platinum; C041500:titanium nitride; D012428:Ruthenium; D000535:Aluminum; D014025:Titanium