title: Reflectance reduction of InP wafers after high-temperature annealing.
abstract: Broadband reduction of light reflection from the surface of InP wafers after high-temperature annealing in air has been observed. In the transparency region of the material, the reflection drop is accompanied by increasing transmission of light through the wafer. The spectral position of a deep minimum of the reflection coefficient can be tuned, by varying the temperature and the time of annealing, in a wide spectral range from ultraviolet to infrared. The effect is due to formation of thermal oxide layers on the surfaces of the wafer with optical parameters favorable for antireflection.
authors.affiliation: State University of New York at Stony Brook, Department of Electrical and Computer Engineering, Stony Brook, New York 11794, USA. osemyonov@ece.sunysb.edu
authors.forename: Oleg G
authors.initials: OG
authors.lastname: Semyonov
authors.forename: Arsen V
authors.initials: AV
authors.lastname: Subashiev
authors.forename: Alexander
authors.initials: A
authors.lastname: Shabalov
authors.forename: Nadia
authors.initials: N
authors.lastname: Lifshitz
authors.forename: Zhichao
authors.initials: Z
authors.lastname: Chen
authors.forename: Takashi
authors.initials: T
authors.lastname: Hosoda
authors.forename: Serge
authors.initials: S
authors.lastname: Luryi