title: Effective control of photoluminescence from ZnO nanowires by a-SiNx:H decoration.
abstract: The a-SiNx:H with a large bandgap of 3.8 eV was utilized to decorate ZnO nanowires. The UV emission from the a-SiNx:H-decorated ZnO nanowires are greatly enhanced compared with the undecorated ZnO nanowire. The deep-level defect emission has been completely suppressed even though the sample was annealed at temperatures up to 400 °C. The incorporation of H and N is suggested to passivate the defect states at the nanowire surface and thus result in the flat-band effect near ZnO surface as well as reduction of the nonradiative recombination probability.
authors.affiliation: Department of Physics and the William Mong Institute of Nano Science and Technology, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China.
authors.forename: Rui
authors.initials: R
authors.lastname: Huang
authors.forename: Shuigang
authors.initials: S
authors.lastname: Xu
authors.forename: Xiang
authors.initials: X
authors.lastname: Wang
authors.forename: Wenhao
authors.initials: W
authors.lastname: Guo
authors.forename: Chao
authors.initials: C
authors.lastname: Song
authors.forename: Jie
authors.initials: J
authors.lastname: Song
authors.forename: Kin Ming
authors.initials: KM
authors.lastname: Ho
authors.forename: Shengwang
authors.initials: S
authors.lastname: Du
authors.forename: Ning
authors.initials: N
authors.lastname: Wang