title: Purification of silicon powder by the formation of thin porous layer followed byphoto-thermal annealing.
abstract: Porous silicon has been prepared using a vapor-etching based technique on a commercial silicon powder. Strong visible emission was observed in all samples. Obtained silicon powder with a thin porous layer at the surface was subjected to a photo-thermal annealing at different temperatures under oxygen atmosphere followed by a chemical treatment. Inductively coupled plasma atomic emission spectrometry results indicate that silicon purity is improved from 99.1% to 99.994% after annealing at 900°C.
authors.affiliation: Laboratoire de Photovoltaïque, Centre des Recherches et des Technologies de l'Energie (CRTEn), Technopôle de Borj-Cédria BP 95, Hammam-Lif, 2050, Tunisia. mhajji2001@yahoo.fr.
authors.forename: Marouan
authors.initials: M
authors.lastname: Khalifa
authors.forename: Messaoud
authors.initials: M
authors.lastname: Hajji
authors.forename: Hatem
authors.initials: H
authors.lastname: Ezzaouia