title: Design and simulation of betavoltaic battery using large-grain polysilicon.
abstract: In this paper, we present the design and simulation of a p-n junction betavoltaic battery based on large-grain polysilicon. By the Monte Carlo simulation, the average penetration depth were obtained, according to which the optimal depletion region width was designed. The carriers transport model of large-grain polysilicon is used to determine the diffusion length of minority carrier. By optimizing the doping concentration, the maximum power conversion efficiency can be achieved to be 0.90% with a 10 mCi/cm(2) Ni-63 source radiation.
authors.affiliation: Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen, Fujian 361005, People's Republic of China.
authors.forename: Shulin
authors.initials: S
authors.lastname: Yao
authors.forename: Zijun
authors.initials: Z
authors.lastname: Song
authors.forename: Xiang
authors.initials: X
authors.lastname: Wang
authors.forename: Haisheng
authors.initials: H
authors.lastname: San
authors.forename: Yuxi
authors.initials: Y
authors.lastname: Yu