title: Integrated circuits based on bilayer MoS₂ transistors.
abstract: Two-dimensional (2D) materials, such as molybdenum disulfide (MoS(2)), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS(2) allows it to overcome the shortcomings of zero-bandgap graphene, while still sharing many of graphene's advantages for electronic and optoelectronic applications. Discrete electronic and optoelectronic components, such as field-effect transistors, sensors, and photodetectors made from few-layer MoS(2) show promising performance as potential substitute of Si in conventional electronics and of organic and amorphous Si semiconductors in ubiquitous systems and display applications. An important next step is the fabrication of fully integrated multistage circuits and logic building blocks on MoS(2) to demonstrate its capability for complex digital logic and high-frequency ac applications. This paper demonstrates an inverter, a NAND gate, a static random access memory, and a five-stage ring oscillator based on a direct-coupled transistor logic technology. The circuits comprise between 2 to 12 transistors seamlessly integrated side-by-side on a single sheet of bilayer MoS(2). Both enhancement-mode and depletion-mode transistors were fabricated thanks to the use of gate metals with different work functions.
authors.affiliation: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States. hanw@mtl.mit.edu
authors.forename: Han
authors.initials: H
authors.lastname: Wang
authors.forename: Lili
authors.initials: L
authors.lastname: Yu
authors.forename: Yi-Hsien
authors.initials: YH
authors.lastname: Lee
authors.forename: Yumeng
authors.initials: Y
authors.lastname: Shi
authors.forename: Allen
authors.initials: A
authors.lastname: Hsu
authors.forename: Matthew L
authors.initials: ML
authors.lastname: Chin
authors.forename: Lain-Jong
authors.initials: LJ
authors.lastname: Li
authors.forename: Madan
authors.initials: M
authors.lastname: Dubey
authors.forename: Jing
authors.initials: J
authors.lastname: Kong
authors.forename: Tomas
authors.initials: T
authors.lastname: Palacios
mesh_terms: D004220:Disulfides / Q000737:chemistry*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008982:Molybdenum / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000295:instrumentation*; D010316:Particle Size; D014173:Transistors, Electronic
chemical_list: D004220:Disulfides; D008982:Molybdenum; C082964:molybdenum disulfide