title: Gallium-nitride-based plasmonic multilayer operating at 1.55 μm.
abstract: In this Letter, we have designed and fabricated a III-V semiconductor multilayer based on surface plasmon resonance (SPR) operating at the telecom wavelength. Optimization of the optogeometrical parameters and the metal/semiconductor layers required for this novel structure was conducted accurately by theoretical tools using the Maxwell equations. Technological fabrication of the device and its experimental characterizations using an evanescent coupling configuration was performed: the results have confirmed the existence of SPR associated to a sharp width response. This study could be a first step in the design of new plasmonic-semiconductor-based optical devices such as modulators and switches.
authors.affiliation: Institut d’Électronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Villeneuve d’Ascq Cedex, France.
authors.forename: Arnaud
authors.initials: A
authors.lastname: Stolz
authors.forename: Laurence
authors.initials: L
authors.lastname: Considine
authors.forename: Salim
authors.initials: S
authors.lastname: Faci
authors.forename: Elhadj
authors.initials: E
authors.lastname: Dogheche
authors.forename: Charlotte
authors.initials: C
authors.lastname: Tripon-Canseliet
authors.forename: Brigitte
authors.initials: B
authors.lastname: Loiseaux
authors.forename: Dimitris
authors.initials: D
authors.lastname: Pavlidis
authors.forename: Didier
authors.initials: D
authors.lastname: Decoster
authors.forename: Jean
authors.initials: J
authors.lastname: Chazelas