title: Flexible non-volatile ferroelectric polymer memory with gate-controlled multilevel operation.
abstract: A flexible field-effect transistor with a poly(3-hexylthiophene) (P3HT) active channel and a ferroelectric poly(vinlyidene fluoride-co-trifluoro ethylene) (PVDF-TrFE) insulator exhibits gate-voltage-controllable multilevel non-volatile memory characteristics with highly reliable data retention and endurance.
authors.affiliation: Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749, Republic of Korea.
authors.forename: Sun Kak
authors.initials: SK
authors.lastname: Hwang
authors.forename: Insung
authors.initials: I
authors.lastname: Bae
authors.forename: Richard Hahnkee
authors.initials: RH
authors.lastname: Kim
authors.forename: Cheolmin
authors.initials: C
authors.lastname: Park
mesh_terms: D016248:Computer Storage Devices; D004867:Equipment Design; D019544:Equipment Failure Analysis; D060526:Magnetic Fields; D036103:Nanotechnology / Q000295:instrumentation*; D016566:Organoselenium Compounds / Q000737:chemistry*; D011145:Polyvinyls / Q000737:chemistry*; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D014173:Transistors, Electronic
chemical_list: D016566:Organoselenium Compounds; D011145:Polyvinyls; C526212:poly(3-hexyl)selenophene; C073666:vinylidene fluoride-trifluoroethylene copolymer