title: Improved electrical and optical properties of ITO/Ag/ITO films by using electron beam irradiation and their application to ultraviolet light-emitting diode as highly transparent p-type electrodes.
abstract: We have investigated the effect of insertion of a Ag layer in ITO film as well as electron beam irradiation to the multilayer films on the electrical and optical properties of the ITO-based multilayer deposited by magnetron sputtering method at room temperature. Inserting a very thin Ag layer between ITO layers resulted in a significant decrease in sheet resistance and increased the optical band gap of the ITO/Ag/ITO multilayer to 4.35 eV, followed by a high transparency of approximately 80% at a wavelength of 375 nm. We have also fabricated ultraviolet light-emitting diodes (LED) by using the ITO/Ag/ITO p-type electrode with/without electron beam irradiation. The results show that the UV-LEDs having ITO/Ag/ITO p-electrode with electron beam irradiation produced 19% higher optical output power due to the low absorption of light in the p-type electrode.
authors.affiliation: Department of Printed Electronics Engineering (WCU), Sunchon National University, Jeonnam 540-742, Korea.
authors.forename: C H
authors.initials: CH
authors.lastname: Hong
authors.forename: Y J
authors.initials: YJ
authors.lastname: Jo
authors.forename: H A
authors.initials: HA
authors.lastname: Kim
authors.forename: M J
authors.initials: MJ
authors.lastname: Park
authors.forename: J S
authors.initials: JS
authors.lastname: Kwak