title: Hybrid porphyrin-silicon nanowire field-effect transistor by opto-electrical excitation.
abstract: A porphyrin-silicon nanowire (Si-NW) hybrid field-effect transistor is introduced. The hybrid device has separate electrical and optical gates surrounding the Si-NW channel. Porphyrin, a component of chlorophyll, is employed as an optical gate to modulate the potential of the Si-NW channel. Due to the independently formed hybrid gates, both optical and electrical excitation can effectively modulate the device. The exposed porphyrin optical gate responds to the optical excitation, and independently formed electrical gates respond to the electrical excitation. Charge transfer characteristics between a semiconductor channel and the porphyrin optical gate are deeply investigated. Optical, electrical, and opto-electrical excitation methods are employed to analyze the charging and discharging behaviors. Of these methods, opto-electrical excitation enables the strongest charge transfer because the inversion electron formation by an electrical pulse and the photoinduced charge transfer by an optical stimulus are affected simultaneously. Discharging processes, such as rapid discharging, exponential detrapping, and the formation of metastable states are also analyzed.
authors.affiliation: Department of Electrical Engineering, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea.
authors.forename: Myeong-Lok
authors.initials: ML
authors.lastname: Seol
authors.forename: Sung-Jin
authors.initials: SJ
authors.lastname: Choi
authors.forename: Ji-Min
authors.initials: JM
authors.lastname: Choi
authors.forename: Jae-Hyuk
authors.initials: JH
authors.lastname: Ahn
authors.forename: Yang-Kyu
authors.initials: YK
authors.lastname: Choi
mesh_terms: D004553:Electric Conductivity; D004574:Electromagnetic Fields; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008027:Light; D008422:Materials Testing; D049329:Nanostructures / Q000737:chemistry* / Q000528:radiation effects / Q000648:ultrastructure; D010316:Particle Size; D011166:Porphyrins / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry* / Q000528:radiation effects; D014173:Transistors, Electronic
chemical_list: D011166:Porphyrins; D012825:Silicon