title: Formation mechanism and characterization of black silicon surface by a single-step wet-chemical process.
abstract: We report a simple single-step etching method for formation of black surface on silicon wafer by using HAuCl4-HF-H2O2 etching solution, in which catalytic Au particles were deposited in situ. The black surface suppresses the reflectivity in a wide spectral region. The formation mechanism involved has been discussed.
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.
authors.forename: Li-Gong
authors.initials: LG
authors.lastname: Li
authors.forename: Shu-Man
authors.initials: SM
authors.lastname: Liu
authors.forename: Xiao-Ling
authors.initials: XL
authors.lastname: Ye
authors.forename: Marius
authors.initials: M
authors.lastname: Hossu
authors.forename: Ke
authors.initials: K
authors.lastname: Jiang
authors.forename: Wei
authors.initials: W
authors.lastname: Chen
authors.forename: Zhan-Guo
authors.initials: ZG
authors.lastname: Wang