title: Investigation on the photoconductive behaviors of an individual AlN nanowire under different excited lights.
abstract: Ultra-long AlN nanowire arrays are prepared by chemical vapor deposition, and the photoconductive performances of individual nanowires are investigated in our self-built measurement system. Individual ultra-long AlN nanowire (UAN) exhibits a clear photoconductive effect under different excited lights. We attribute the positive photocurrent response of individual UAN to the dominant molecular sensitization effect. It is found that they have a much faster response speed (a rise and decay time of about 1 ms), higher photocurrent response (2.7×106), and more reproductive working performance (the photocurrent fluctuation is lower than 2%) in the air environment. Their better photoconductive performances are comparable to many nanostructures, which are suggested to be a candidate for building promising photosensitive nanodevices in the future.
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, Sun Yat-sen University, Guangzhou, 510275, People's Republic of China. liufei@mail.sysu.edu.cn.
authors.forename: Fei
authors.initials: F
authors.lastname: Liu
authors.forename: Lifang
authors.initials: L
authors.lastname: Li
authors.forename: Tongyi
authors.initials: T
authors.lastname: Guo
authors.forename: Haibo
authors.initials: H
authors.lastname: Gan
authors.forename: Xiaoshu
authors.initials: X
authors.lastname: Mo
authors.forename: Jun
authors.initials: J
authors.lastname: Chen
authors.forename: Shaozhi
authors.initials: S
authors.lastname: Deng
authors.forename: Ningsheng
authors.initials: N
authors.lastname: Xu