title: InGaN-based nano-pillar light emitting diodes fabricated by self-assembled ITO nano-dots.
abstract: InGaN/GaN based nano-pillar light emitting diodes (LEDs) with a diameter of 200-300 nm and a height of 500 nm are fabricated by inductively coupled plasma etching using self-assembled ITO nano-dots as etching mask, which were produced by wet etching of the as-deposited ITO films. The peak PL intensity of the nano-pillar LEDs was significantly higher than that of the as-grown planar LEDs, which can be attributed to the improvement of external quantum efficiency of the nano-pillar LEDs due to the large sidewall of the nano-pillars. We have also demonstrated electrical pumping of the InGaN/GaN based nano-pillar LEDs with a self-aligned TiO2 layer as a passivation of sidewall of the nano-pillars.
authors.affiliation: Department of Printed Electronics Engineering (WCU), Sunchon National University, Jeonnam 540-742, Korea.
authors.forename: Min Joo
authors.initials: MJ
authors.lastname: Park
authors.forename: Joon Seop
authors.initials: JS
authors.lastname: Kwak