title: Low frequency pressure modulation of indium antimonide.
abstract: A lumped parameter resonator capable of generating megapascal pressures at low frequency (kilohertz) is described. Accelerometers are used to determine the applied pressure, and are calibrated with a piezoelectric sample. A laser diagnostic was also developed to measure the pressure in semiconductor samples through the band gap pressure dependence. In addition, the laser diagnostic has been used to measure the attenuation coefficient α of commercially available indium antimonide (InSb) wafers. The resonator and laser diagnostic have been used with InSb samples to verify the pressure response.
authors.affiliation: The University of Texas at Austin, Austin, Texas 78712-0240, USA. hallock@ece.utexas.edu
authors.forename: Gary A
authors.initials: GA
authors.lastname: Hallock
authors.forename: Mark A
authors.initials: MA
authors.lastname: Meier