title: Piezo-phototronic effect of CdSe nanowires.
abstract: The piezo-phototronic effect on transport properties of flexible CdSe NW devices is investigated. An optimum sensitivity of the flexible CdSe NW devices can be achieved by adjusting the applied strain and illumination intensity. The piezo-phototronic effect under compressive strain increases the internal electric field of the Schottky barrier, and assists the separation of the photo-excited electron-hole pairs, resulting in the increase of photocurrent. A trap-mediated mechanism is responsible for the decreased hole separation when the strain is larger than the critical strain.
authors.affiliation: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA.
authors.forename: Lin
authors.initials: L
authors.lastname: Dong
authors.forename: Simiao
authors.initials: S
authors.lastname: Niu
authors.forename: Caofeng
authors.initials: C
authors.lastname: Pan
authors.forename: Ruomeng
authors.initials: R
authors.lastname: Yu
authors.forename: Yan
authors.initials: Y
authors.lastname: Zhang
authors.forename: Zhong Lin
authors.initials: ZL
authors.lastname: Wang
mesh_terms: D019187:Cadmium Compounds / Q000737:chemistry*; D002384:Catalysis; D004129:Dimethylpolysiloxanes / Q000737:chemistry; D004560:Electricity; D006046:Gold / Q000737:chemistry; D008027:Light; D053770:Nanowires / Q000737:chemistry* / Q000648:ultrastructure; D018036:Selenium Compounds / Q000737:chemistry*; D012666:Semiconductors
chemical_list: D019187:Cadmium Compounds; D004129:Dimethylpolysiloxanes; D018036:Selenium Compounds; C013830:baysilon; D006046:Gold; C058667:cadmium selenide