title: High density and large area arrays of silicon oxide pillars with tunable domain size for mask etch applications.
abstract: Silicon oxide pillars with tunable feature sizes and pitches are fabricated based on a block copolymer self-assembly template. By using reactive ion etching (RIE), the feature size of the silicon oxide pillars can be tuned without affecting the pitch. Using BCP with a different molecular weight can change the pitch size of the silicon oxide pillars. An area density of up to 2 teradots/inch(2)  is achieved.
authors.affiliation: Department of Polymer Science and Engineering, University of Massachusetts Amherst, Amherst, MA 01003, USA.
authors.forename: Xiaodan
authors.initials: X
authors.lastname: Gu
authors.forename: Paul
authors.initials: P
authors.lastname: Dorsey
authors.forename: Thomas P
authors.initials: TP
authors.lastname: Russell
mesh_terms: D004129:Dimethylpolysiloxanes / Q000737:chemistry; D011108:Polymers / Q000737:chemistry*; D011137:Polystyrenes / Q000737:chemistry; D011145:Polyvinyls / Q000737:chemistry; D016062:Porosity; D011725:Pyridines / Q000737:chemistry; D012822:Silicon Dioxide / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D004129:Dimethylpolysiloxanes; D011108:Polymers; D011137:Polystyrenes; D011145:Polyvinyls; D011725:Pyridines; C509607:polystyrene-block-poly(4-vinylpyridine); C013830:baysilon; D012822:Silicon Dioxide