title: Angle-dependent carrier transmission in graphene p-n junctions.
abstract: Angle-dependent carrier transmission probability in graphene p-n junctions is investigated. Using electrostatic doping from buried gates, p-n junctions are formed along graphene channels that are patterned to form different angles with the junction. A peak in the junction resistance is observed, which becomes pronounced with angle. This angular dependence is observed for junctions made on both exfoliated and CVD-grown graphene and is consistent with the theoretically predicted dependence of transmission probability on incidence angle.
authors.affiliation: College of Nanoscale Science and Engineering, The State University of New York at Albany, Albany, New York 12203, United States. ssutar@albany.edu
authors.forename: S
authors.initials: S
authors.lastname: Sutar
authors.forename: E S
authors.initials: ES
authors.lastname: Comfort
authors.forename: J
authors.initials: J
authors.lastname: Liu
authors.forename: T
authors.initials: T
authors.lastname: Taniguchi
authors.forename: K
authors.initials: K
authors.lastname: Watanabe
authors.forename: J U
authors.initials: JU
authors.lastname: Lee
mesh_terms: D004553:Electric Conductivity; D004579:Electron Transport; D008422:Materials Testing; D008839:Microelectrodes; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012666:Semiconductors