title: Interlayer transport in disordered semiconductor electron bilayers.
abstract: We study the effects of disorder on the interlayer transport properties of disordered semiconductor  bilayers by performing self-consistent quantum transport calculations. We find that the addition of material disorder to the system affects the interlayer interactions leading to significant deviations in the interlayer transfer characteristics. In particular, we find that disorder decreases and broadens the tunneling peak, effectively reducing the interacting system to a non-interacting system. Our results suggest that the experimental observation of exchange-enhanced interlayer transport in semiconductor bilayers requires materials with mean free paths larger than the spatial extent of the system.
authors.affiliation: Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801, USA.
authors.forename: Y
authors.initials: Y
authors.lastname: Kim
authors.forename: B
authors.initials: B
authors.lastname: Dellabetta
authors.forename: M J
authors.initials: MJ
authors.lastname: Gilbert