title: Narrowband ultraviolet photodetector based on MgZnO and NPB heterojunction.
abstract: An ultraviolet photodetector was fabricated based on Mg0.07Zn0.93O heterojunction. N, N'-bis (naphthalen-1-y1)-N, N'-bis(pheny) benzidine was selected as the hole transporting layer. I-V characteristic curves of the device were measured in the dark and under the illumination of 340 nm UV light with density of 1.33 mW/cm2. The device showed a low dark current of about 3×10(-10) A and a high photo-dark current ratio of 1×10(5) at -2 V bias. A narrowband photoresponse was observed from 300 to 400 nm and centered at 340 nm with a full width at half-maximum of only 30 nm. The maximum peak response is at 340 nm, which is 0.192 A/W at the bias of -1 V.
authors.affiliation: Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing, China.
authors.forename: Zuofu
authors.initials: Z
authors.lastname: Hu
authors.forename: Zhenjun
authors.initials: Z
authors.lastname: Li
authors.forename: Lu
authors.initials: L
authors.lastname: Zhu
authors.forename: Fengjuan
authors.initials: F
authors.lastname: Liu
authors.forename: Yanwu
authors.initials: Y
authors.lastname: Lv
authors.forename: Xiqing
authors.initials: X
authors.lastname: Zhang
authors.forename: Yongsheng
authors.initials: Y
authors.lastname: Wang
mesh_terms: D015057:1-Naphthylamine / Q000031:analogs & derivatives* / Q000737:chemistry; D001560:Benzidines / Q000737:chemistry*; D004583:Electrons; D017616:Magnesium Compounds / Q000737:chemistry*; D055096:Optical Devices; D010087:Oxides / Q000737:chemistry*; D014466:Ultraviolet Rays; D017967:Zinc Compounds / Q000737:chemistry*; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D001560:Benzidines; D017616:Magnesium Compounds; D010087:Oxides; D017967:Zinc Compounds; D015057:1-Naphthylamine; D015034:Zinc Oxide