title: A molybdenum disulfide/carbon nanotube heterogeneous complementary inverter.
abstract: We report a simple, bottom-up/top-down approach for integrating drastically different nanoscale building blocks to form a heterogeneous complementary inverter circuit based on layered molybdenum disulfide and carbon nanotube (CNT) bundles. The fabricated CNT/MoS(2) inverter is composed of n-type molybdenum disulfide (MOS(2)) and p-type CNT transistors, with a high voltage gain of 1.3. The CNT channels are fabricated using directed assembly while the layered molybdenum disulfide channels are fabricated by mechanical exfoliation. This bottom-up fabrication approach for integrating various nanoscale elements with unique characteristics provides an alternative cost-effective methodology to complementary metal-oxide-semiconductors, laying the foundation for the realization of high performance logic circuits.
authors.affiliation: NSF Nanoscale Science and Engineering Center for High-rate Nanomanufacturing, Department of Mechanical and Industrial Engineering, Northeastern University, Boston MA 02115, USA. ju.huang@neu.edu
authors.forename: Jun
authors.initials: J
authors.lastname: Huang
authors.forename: Sivasubramanian
authors.initials: S
authors.lastname: Somu
authors.forename: Ahmed
authors.initials: A
authors.lastname: Busnaina