title: Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors.
abstract: Using measured capacitance-voltage curves with different gate lengths and current-voltage characteristics at low drain-to-source voltage for the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) of different drain-to-source distances, we found that the dominant scattering mechanism in AlGaN/AlN/GaN HFETs is determined by the ratio of gate length to drain-to-source distance. For devices with small ratio (here, less than 1/2), polarization Coulomb field scattering dominates electron mobility. However, for devices with large ratio (here, more than 1/2), longitudinal optical (LO) phonon scattering and interface roughness scattering are dominant. The reason is closely related to polarization Coulomb field scattering.
authors.affiliation: School of Physics, Shandong University, Jinan, 250100, China. linzj@sdu.edu.cn.
authors.forename: Yuanjie
authors.initials: Y
authors.lastname: Lv
authors.forename: Zhaojun
authors.initials: Z
authors.lastname: Lin
authors.forename: Lingguo
authors.initials: L
authors.lastname: Meng
authors.forename: Chongbiao
authors.initials: C
authors.lastname: Luan
authors.forename: Zhifang
authors.initials: Z
authors.lastname: Cao
authors.forename: Yingxia
authors.initials: Y
authors.lastname: Yu
authors.forename: Zhihong
authors.initials: Z
authors.lastname: Feng
authors.forename: Zhanguo
authors.initials: Z
authors.lastname: Wang