title: MoS2 nanosheets for top-gate nonvolatile memory transistor channel.
authors.affiliation: Institute of Physics and Applied Physics, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Korea.
authors.forename: Hee Sung
authors.initials: HS
authors.lastname: Lee
authors.forename: Sung-Wook
authors.initials: SW
authors.lastname: Min
authors.forename: Min Kyu
authors.initials: MK
authors.lastname: Park
authors.forename: Young Tack
authors.initials: YT
authors.lastname: Lee
authors.forename: Pyo Jin
authors.initials: PJ
authors.lastname: Jeon
authors.forename: Jae Hoon
authors.initials: JH
authors.lastname: Kim
authors.forename: Sunmin
authors.initials: S
authors.lastname: Ryu
authors.forename: Seongil
authors.initials: S
authors.lastname: Im
mesh_terms: D004220:Disulfides / Q000737:chemistry*; D008982:Molybdenum / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry*; D036103:Nanotechnology / Q000295:instrumentation*; D013059:Spectrum Analysis, Raman / Q000295:instrumentation; D014173:Transistors, Electronic
chemical_list: D004220:Disulfides; D008982:Molybdenum; C082964:molybdenum disulfide