title: Highly air-stable phosphorus-doped n-type graphene field-effect transistors.
abstract: Phosphorus-doped double-layered graphene field-effect transistors (PDGFETs) show much stronger air-stable n-type behavior than nitrogen-doped double-layered graphene FETs (NDGFETs), even under an oxygen atmosphere, due to strong nucleophilicity, which may lead to real applications for air-stable n-type graphene channels.
authors.affiliation: NCRI, Center for Smart Molecular Memory, Department of Chemistry, Samsung-SKKU Graphene Center, Sungkyunkwan University, Suwon 440-746, Republic of Korea.
authors.forename: Surajit
authors.initials: S
authors.lastname: Some
authors.forename: Jangah
authors.initials: J
authors.lastname: Kim
authors.forename: Keunsik
authors.initials: K
authors.lastname: Lee
authors.forename: Atul
authors.initials: A
authors.lastname: Kulkarni
authors.forename: Yeoheung
authors.initials: Y
authors.lastname: Yoon
authors.forename: Saemi
authors.initials: S
authors.lastname: Lee
authors.forename: Taesung
authors.initials: T
authors.lastname: Kim
authors.forename: Hyoyoung
authors.initials: H
authors.lastname: Lee
mesh_terms: D006108:Graphite / Q000737:chemistry*; D006358:Hot Temperature; D009584:Nitrogen / Q000737:chemistry; D010100:Oxygen / Q000737:chemistry; D010758:Phosphorus / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry; D014173:Transistors, Electronic
chemical_list: D010758:Phosphorus; D012822:Silicon Dioxide; D006108:Graphite; D009584:Nitrogen; D010100:Oxygen