Construction and evaluation of high-quality n-ZnO nanorod/p-diamond heterojunctions.
Vertically-aligned ZnO nanorods (NRs) arrays were synthesized by a low-temperature solution method on boron-doped diamond (BDD) films. The morphology, growth direction, and crystallinity of the ZnO NRs were studied by scanning electron microscopy, X-ray diffraction and cathodoluminescence. Electrical characterization of the ZnO NR/BBD heterostructures revealed characteristic p-n junction properties with an on/off ratio of about 50 at +/- 4 V and a small reverse leakage current approximately 1 microA. Moreover, the junctions showed an ideality factor around 1.0 at a low forward voltage from 0 to 0.3 V and about 2.1 for an increased voltage ranging from 1.2 to 3.0 V, being consistent with that of an ideal diode according to the Sah-Noyce-Shockley theory.
Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China.
C D
CD
Wang
S K
SK
Jha
Z H
ZH
Chen
T W
TW
Ng
Y K
YK
Liu
M F
MF
Yuen
Z Z
ZZ
Lu
S Y
SY
Kwok
J A
JA
Zapien
I
I
Bello
C S
CS
Lee
W J
WJ
Zhang
D018130:Diamond / Q000737:chemistry*; D004553:Electric Conductivity; D004867:Equipment Design; D019544:Equipment Failure Analysis; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012666:Semiconductors; D015034:Zinc Oxide / Q000737:chemistry*
D018130:Diamond; D015034:Zinc Oxide