Controlling volatility in solid-state, redox-based memory devices using heterojunction barriers to ion transport.
In this work, we show the ability to tune the volatility of redox-based memory by designing barriers to ion drift. By changing the nature and properties of the barrier material, the key performance metric (ratio of retention time to read/write time) could be altered to yield ratios in the range of 1 to 10(9).
Department of Chemistry, University of Manitoba, Winnipeg, Manitoba, R3T 2N2, Canada.
M Ramesh
MR
Kumar
G M Aminur
GM
Rahman
Douglas J
DJ
Thomson
Michael S
MS
Freund