Hopping conduction in Mn ion-implanted GaAs nanowires.
We report on temperature-dependent charge transport in heavily doped Mn(+)-implanted GaAs nanowires. The results clearly demonstrate that the transport is governed by temperature-dependent hopping processes, with a crossover between nearest neighbor hopping and Mott variable range hopping at about 180 K. From detailed analysis, we have extracted characteristic hopping energies and corresponding hopping lengths. At low temperatures, a strongly nonlinear conductivity is observed which reflects a modified hopping process driven by the high electric field at large bias.
Solid State Physics/The Nanometer Structure Consortium, Lund University, Box 118, SE-221 00 Lund, Sweden.
Waldomiro
W
Paschoal
Sandeep
S
Kumar
Christian
C
Borschel
Phillip
P
Wu
Carlo M
CM
Canali
Carsten
C
Ronning
Lars
L
Samuelson
Håkan
H
Pettersson
D001152:Arsenicals / Q000737:chemistry*; D004553:Electric Conductivity; D004579:Electron Transport; D005708:Gallium / Q000737:chemistry*; D008345:Manganese / Q000737:chemistry*; D008422:Materials Testing; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D013696:Temperature; D013814:Thermal Conductivity
D001152:Arsenicals; C043055:gallium arsenide; D008345:Manganese; D005708:Gallium