Metal-doped magnetite thin films.
This paper investigates magnetite (Fe3O4) thin film containing a small amount of a metal element. The films are prepared by rf sputtering with a composite target of ceramic iron oxide with metal chips. Low-temperature magnetization of magnetite containing 5.3%Ge reveals that the film contains some magnetically weak coupling grains. The metal element Mg reduces both hematite (alpha-Fe2O3) and magnetite, resulting in single-phase wüstite (Fe1-xO). In contrast, adding Ge selectively reduces hematite, while magnetite remains unreactive. According to the free energy of reaction, the element Ge is able to reduce hematite only, whereas the element Mg is capable of reducing both hematite and magnetite. This property is in good agreement with the experiment results.
Research Institute for Electromagnetic Materials, Sendai 982-0807, Japan.
Seishi
S
Abe
De Hai
de H
Ping
Shintaro
S
Nakamura
Masato
M
Ohnuma
Shigehiro
S
Ohnuma
D003460:Crystallization / Q000379:methods*; D046911:Macromolecular Substances / Q000737:chemistry; D058185:Magnetite Nanoparticles / Q000737:chemistry* / Q000648:ultrastructure*; D008422:Materials Testing; D008567:Membranes, Artificial; D008670:Metals / Q000737:chemistry*; D008968:Molecular Conformation; D010316:Particle Size; D013499:Surface Properties
D046911:Macromolecular Substances; D058185:Magnetite Nanoparticles; D008567:Membranes, Artificial; D008670:Metals