Electrical spin injection into InN semiconductor nanowires.
We report on the conditions necessary for the electrical injection of spin-polarized electrons into indium nitride nanowires synthesized from the bottom up by molecular beam epitaxy. The presented results mark the first unequivocal evidence of spin injection into III-V semiconductor nanowires. Utilizing a newly developed preparation scheme, we are able to surmount shadowing effects during the metal deposition. Thus, we avoid strong local anisotropies that arise if the ferromagnetic leads are wrapping around the nanowire. Using a combination of various complementary techniques, inter alia the local Hall effect, we carried out a comprehensive investigation of the coercive fields and switching behaviors of the cobalt micromagnetic spin probes. This enables the identification of a range of aspect ratios in which the mechanism of magnetization reversal is single domain switching. Lateral nanowire spin valves were prepared. The spin relaxation length is demonstrated to be about 200 nm, which provides an incentive to pursue the route toward nanowire spin logic devices.
Peter Grünberg Institut (PGI-9) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich, 52425 Jülich, Germany. s.heedt@fz-juelich.de
S
S
Heedt
C
C
Morgan
K
K
Weis
D E
DE
Bürgler
R
R
Calarco
H
H
Hardtdegen
D
D
Grützmacher
Th
T
Schäpers
D003460:Crystallization / Q000379:methods*; D004595:Electroplating / Q000379:methods*; D007204:Indium / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012666:Semiconductors; D013499:Surface Properties
D046911:Macromolecular Substances; D007204:Indium; C513701:indium nitride