Characterization of the oxygen oonosorption effect on a single SnO2 nanowire by using conductive atomic force microscopy.
We have verified that SnO2 nano-wire has an n-type semiconductor property and it can be a p-type one when it is exposed to O2. We employed conductive AFM system to measure the I-V curve and resistance of single SnO2 nano-wire which had been synthesized on the Au thin film by a thermal process. To analyze a effect of O2 ionosorption into nano-wire, resistance was measured with various O2 concentration and we observed increment and maintenance of resistance which caused by O2 ionosorption. Also, the O2 ionosorption causes a type transfer of semiconductor and this phenomenon was verified by comparing the Schottky property of nano-wire before and after O2 exposure.
Korea Institute of Materials Science, Changwon 641-831, South Korea.
Jinhee
J
Heo
Junghwan
J
Lee
D000042:Absorption; D003217:Conductometry / Q000379:methods*; D004553:Electric Conductivity; D008422:Materials Testing / Q000379:methods; D018625:Microscopy, Atomic Force / Q000379:methods*; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010100:Oxygen / Q000737:chemistry*; D010316:Particle Size; D017971:Tin Compounds / Q000737:chemistry*
D017971:Tin Compounds; C045358:stannic oxide; D010100:Oxygen