Transparent and flexible graphene charge-trap memory.
A transparent and flexible graphene charge-trap memory (GCTM) composed of a single-layer graphene channel and a 3-dimensional gate stack was fabricated on a polyethylene naphtalate substrate below eutectic temperatures (~110 °C). The GCTM exhibits memory functionality of ~8.6 V memory window and 30% data retention per 10 years, while maintaining ~80% of transparency in the visible wavelength. Under both tensile and compressive stress, the GCTM shows minimal effect on the program/erase states and the on-state current. This can be utilized for transparent and flexible electronics that require integration of logic, memory, and display on a single substrate with high transparency and endurance under flex.
Electrical Engineering Department, University of California, Los Angeles, California 90095, United States.
Sung Min
SM
Kim
Emil B
EB
Song
Sejoon
S
Lee
Jinfeng
J
Zhu
David H
DH
Seo
Matthew
M
Mecklenburg
Sunae
S
Seo
Kang L
KL
Wang
D016248:Computer Storage Devices; D055119:Elastic Modulus; D004553:Electric Conductivity; D004579:Electron Transport; D006108:Graphite / Q000737:chemistry*; D008422:Materials Testing; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D012031:Refractometry; D013499:Surface Properties
D006108:Graphite