Threshold voltage fluctuation in 16-nm-gate FinFets induced by random work function of nanosized metal grain.
The random work-function (WK) induced threshold voltage fluctuation (sigmaVth) in 16 nm Titanium Nitride (TiN) metal-gate fin-type field effect transistors (FinFETs) is explored and modeled by using an experimentally validated Monte Carlo simulation approach. The influences of metal-grain size and device geometry aspect ratio on the random WK-induced sigmaVth are considered in the proposed equation analytically. The formula accounts for the inside of fluctuation and could be used for the assessment of effectiveness of suppression techniques.
Parallel and Scientific Computing Laboratory, Department of Electrical Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan.
Yiming
Y
Li
Hui-Wen
HW
Cheng
Chi-Hong
CH
Hwang
D003198:Computer Simulation; D017076:Computer-Aided Design; D004574:Electromagnetic Fields; D004867:Equipment Design; D019544:Equipment Failure Analysis; D015233:Models, Statistical; D009010:Monte Carlo Method; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D010316:Particle Size; D014025:Titanium / Q000737:chemistry*; D014173:Transistors, Electronic
C041500:titanium nitride; D014025:Titanium