Enhanced light emission of GaN-based diodes with a NiO(x)/graphene hybrid electrode.
A NiO(x) buffer layer is introduced in GaN-based light-emitting diodes to form low resistance ohmic contacts between p-type GaN and graphene conductive electrodes, leading to improved performance with lower operating voltage and higher light output power.
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Yiyun
Y
Zhang
Xiao
X
Li
Liancheng
L
Wang
Xiaoyan
X
Yi
Dehai
D
Wu
Hongwei
H
Zhu
Guohong
G
Wang