Integration of silk protein in organic and light-emitting transistors.
We present the integration of a natural protein into electronic and optoelectronic devices by using silk fibroin as a thin film dielectric in an organic thin film field-effect transistor (OFET) ad an organic light emitting transistor device (OLET) structures. Both n- (perylene) and p-type (thiophene) silk-based OFETs are demonstrated. The measured electrical characteristics are in agreement with high-efficiency standard organic transistors, namely charge mobility of the order of 10(-2) cm(2)/Vs and on/off ratio of 10(4). The silk-based optolectronic element is an advanced unipolar n-type OLET that yields a light emission of 100nW.
Istituto per lo Studio dei Materiali Nanostrutturati, CNR, via P. Gobetti 101, 40129-Bologna, Italy.
R
R
Capelli
J J
JJ
Amsden
G
G
Generali
S
S
Toffanin
V
V
Benfenati
M
M
Muccini
D L
DL
Kaplan
F G
FG
Omenetto
R
R
Zamboni