High aspect ratio sub-15 nm silicon trenches from block copolymer templates.
High-aspect-ratio sub-15-nm silicon trenches are fabricated directly from plasma etching of a block copolymer mask. A novel method that combines a block copolymer reconstruction process and reactive ion etching is used to make the polymer mask. Silicon trenches are characterized by various methods and used as a master for subsequent imprinting of different materials. Silicon nanoholes are generated from a block copolymer with cylindrical microdomains oriented normal to the surface.
Department of Polymer Science and Engineering, University of Massachusetts Amherst, 01003, USA.
Xiaodan
X
Gu
Zuwei
Z
Liu
Ilja
I
Gunkel
S T
ST
Chourou
Sung Woo
SW
Hong
Deirdre L
DL
Olynick
Thomas P
TP
Russell
D058608:Nanopores / Q000648:ultrastructure*; D011092:Polyethylene Glycols / Q000737:chemistry; D011108:Polymers / Q000737:chemistry*; D011137:Polystyrenes / Q000737:chemistry; D011145:Polyvinyls / Q000737:chemistry; D012825:Silicon / Q000737:chemistry*; D012997:Solvents / Q000737:chemistry
D011108:Polymers; D011137:Polystyrenes; D011145:Polyvinyls; D012997:Solvents; C521881:poly(styrene)-block-poly(2-vinylpyrindine) diblock copolymer; C541965:polystyrene-b-poly(ethylene oxide); D011092:Polyethylene Glycols; D012825:Silicon