Ferromagnetic GaAs structures with single Mn delta-layer fabricated using laser deposition.
The new technique combining metal-organic chemical vapor epitaxy with laser ablation of solid targets was used for fabrication of ferromagnetic GaAs structures with single Mn delta-doped layer. The structures demonstrated anomalous Hall effect, planar Hall effect, negative and anisotropic magnetoresistance in temperature range of 10-35 K. In GaAs structures with only single Mn delta-layer (without additional 2D hole gas channel or quantum well) ferromagnetism was observed for the first time.
Physico-Technical Research Institute of University of Nizhny Novgorod, 23/3 Gagarine Ave., 603950, Nizhny Novgorod, Russian Federation.
Yuri A
YA
Danilov
Olga V
OV
Vikhrova
Alexey V
AV
Kudrin
Boris N
BN
Zvonkov
D001152:Arsenicals / Q000737:chemistry* / Q000528:radiation effects*; D005708:Gallium / Q000737:chemistry* / Q000528:radiation effects*; D007834:Lasers; D060526:Magnetic Fields; D008345:Manganese / Q000737:chemistry* / Q000528:radiation effects*; D008422:Materials Testing; D049329:Nanostructures / Q000737:chemistry* / Q000528:radiation effects* / Q000648:ultrastructure; D010316:Particle Size
D001152:Arsenicals; C043055:gallium arsenide; D008345:Manganese; D005708:Gallium