Study of InN epitaxial films and nanorods grown on GaN template by RF-MOMBE.
This paper reports on high-quality InN materials prepared on a GaN template using radio-frequency metalorganic molecular beam epitaxy. We also discuss the structural and electro-optical properties of InN nanorods/films. The X-ray diffraction peaks of InN(0002) and InN(0004) were identified from their spectra, indicating that the (0001)-oriented hexagonal InN was epitaxially grown on the GaN template. Scanning electron microscopic images of the surface morphology revealed a two-dimensional growth at a rate of approximately 0.85 μm/h. Cross-sectional transmission electron microscopy images identified a sharp InN/GaN interface and a clear epitaxial orientation relationship of [0001]InN // [0001]GaN and (      2¯110)InN // (      2¯110)GaN. The optical properties of wurtzite InN nanorods were determined according to the photoluminescence, revealing a band gap of 0.77 eV.
Instrument Technology Research Center, National Applied Research Laboratories, 20 R&D Road V1, Hsinchu Science Park, Hsinchu, Taiwan, 300, Republic of China. weichun@itrc.narl.org.tw.
Wei-Chun
WC
Chen
Shou-Yi
SY
Kuo
Wei-Lin
WL
Wang
Jr-Sheng
JS
Tian
Woei-Tyng
WT
Lin
Fang-I
FI
Lai
Li
L
Chang