High-detectivity multilayer MoS(2) phototransistors with spectral response from ultraviolet to infrared.
Phototransistors based on multilayer MoS(2) crystals are demonstrated with a wider spectral response and higher photoresponsivity than single-layer MoS(2) phototransistors. Multilayer MoS(2) phototransistors further exhibit high room temperature mobilities (>70 cm(2) V(-1) s(-1) ), near-ideal subthreshold swings (~70 mV decade(-1) ), low operating gate biases (<5 V), and negligible shifts in the threshold voltages during illumination.
School of Advanced Materials Engineering, Kookmin University, Seoul 136-702, South Korea.
Woong
W
Choi
Mi Yeon
MY
Cho
Aniruddha
A
Konar
Jong Hak
JH
Lee
Gi-Beom
GB
Cha
Soon Cheol
SC
Hong
Sangsig
S
Kim
Jeongyong
J
Kim
Debdeep
D
Jena
Jinsoo
J
Joo
Sunkook
S
Kim
D004220:Disulfides / Q000737:chemistry*; D007259:Infrared Rays; D018625:Microscopy, Atomic Force; D008982:Molybdenum / Q000737:chemistry*; D013696:Temperature; D014173:Transistors, Electronic; D014466:Ultraviolet Rays
D004220:Disulfides; D008982:Molybdenum; C082964:molybdenum disulfide