High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals.
Unlike graphene, the existence of bandgaps (1-2 eV) in the layered semiconductor molybdenum disulphide, combined with mobility enhancement by dielectric engineering, offers an attractive possibility of using single-layer molybdenum disulphide field-effect transistors in low-power switching devices. However, the complicated process of fabricating single-layer molybdenum disulphide with an additional high-k dielectric layer may significantly limit its compatibility with commercial fabrication. Here we show the first comprehensive investigation of process-friendly multilayer molybdenum disulphide field-effect transistors to demonstrate a compelling case for their applications in thin-film transistors. Our multilayer molybdenum disulphide field-effect transistors exhibited high mobilities (>100 cm(2) V(-1) s(-1)), near-ideal subthreshold swings (~70 mV per decade) and robust current saturation over a large voltage window. With simulations based on Shockley's long-channel transistor model and calculations of scattering mechanisms, these results provide potentially important implications in the fabrication of high-resolution large-area displays and further scientific investigation of various physical properties expected in other layered semiconductors.
Display Device Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics, Yongin, Gyeonggi 446-712, South Korea.
Sunkook
S
Kim
Aniruddha
A
Konar
Wan-Sik
WS
Hwang
Jong Hak
JH
Lee
Jiyoul
J
Lee
Jaehyun
J
Yang
Changhoon
C
Jung
Hyoungsub
H
Kim
Ji-Beom
JB
Yoo
Jae-Young
JY
Choi
Yong Wan
YW
Jin
Sang Yoon
SY
Lee
Debdeep
D
Jena
Woong
W
Choi
Kinam
K
Kim