title: Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature.
abstract: The authors report single-photon emission from InGaAs quantum dots grown by droplet epitaxy on (100) GaAs substrates using a solid-source molecular beam epitaxy system at elevated substrate temperatures above 400°C without post-growth annealing. High-resolution micro-photoluminescence spectroscopy exhibits sharp excitonic emissions with lifetimes ranging from 0.7 to 1.1 ns. The coherence properties of the emitted photons are investigated by measuring the first-order field correlation function.
authors.affiliation: Institute of Nanostructure Technologies and Analytics (INA), CINSaT, University of Kassel, Heinrich-Plett-Strasse 40, Kassel, 34132, Germany. m.benyoucef@physik.uni-kassel.de.
authors.forename: Mohamed
authors.initials: M
authors.lastname: Benyoucef
authors.forename: Verena
authors.initials: V
authors.lastname: Zuerbig
authors.forename: Johann Peter
authors.initials: JP
authors.lastname: Reithmaier
authors.forename: Tim
authors.initials: T
authors.lastname: Kroh
authors.forename: Andreas W
authors.initials: AW
authors.lastname: Schell
authors.forename: Thomas
authors.initials: T
authors.lastname: Aichele
authors.forename: Oliver
authors.initials: O
authors.lastname: Benson