title: Demonstration of defect-free and composition tunable GaxIn₁-xSb nanowires.
abstract: The Ga(x)In(1-x)Sb ternary system has many interesting material properties, such as high carrier mobilities and a tunable range of bandgaps in the infrared. Here we present the first report on the growth and compositional control of Ga(x)In(1-x)Sb material grown in the form of nanowires from Au seeded nanoparticles by metalorganic vapor phase epitaxy. The composition of the grown Ga(x)In(1-x)Sb nanowires is precisely controlled by tuning the growth parameters where x varies from 1 to ∼0.3. Interestingly, the growth rate of the Ga(x)In(1-x)Sb nanowires increases with diameter, which we model based on the Gibbs-Thomson effect. Nanowire morphology can be tuned from high to very low aspect ratios, with perfect zinc blende crystal structure regardless of composition. Finally, electrical characterization on nanowire material with a composition of Ga(0.6)In(0.4)Sb showed clear p-type behavior.
authors.affiliation: Solid State Physics, Lund University, Box 118, SE-22100 Lund, Sweden. sepideh.gorji@ftf.lth.se
authors.forename: Sepideh
authors.initials: S
authors.lastname: Gorji Ghalamestani
authors.forename: Martin
authors.initials: M
authors.lastname: Ek
authors.forename: Bahram
authors.initials: B
authors.lastname: Ganjipour
authors.forename: Claes
authors.initials: C
authors.lastname: Thelander
authors.forename: Jonas
authors.initials: J
authors.lastname: Johansson
authors.forename: Philippe
authors.initials: P
authors.lastname: Caroff
authors.forename: Kimberly A
authors.initials: KA
authors.lastname: Dick
mesh_terms: D003460:Crystallization / Q000379:methods*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D053768:Metal Nanoparticles / Q000737:chemistry* / Q000648:ultrastructure*; D008968:Molecular Conformation; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D013499:Surface Properties
chemical_list: D046911:Macromolecular Substances