title: Fully integrated InGaAs/InP single-photon detector module with gigahertz sine wave gating.
abstract: InGaAs/InP single-photon avalanche diodes (SPADs) working in the regime of GHz clock rates are crucial components for the high-speed quantum key distribution (QKD). We have developed for the first time a compact, stable, and user-friendly tabletop InGaAs/InP single-photon detector system operating at a 1.25 GHz gate rate that fully integrates functions for controlling and optimizing SPAD performance. We characterize the key parameters of the detector system and test the long-term stability of the system for continuous operation of 75 h. The detector system can substantially enhance QKD performance and our present work paves the way for practical high-speed QKD applications.
authors.affiliation: Hefei National Laboratory for Physical Sciences at Microscale and Department of Modern Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.
authors.forename: Xiao-Lei
authors.initials: XL
authors.lastname: Liang
authors.forename: Jian-Hong
authors.initials: JH
authors.lastname: Liu
authors.forename: Quan
authors.initials: Q
authors.lastname: Wang
authors.forename: De-Bing
authors.initials: DB
authors.lastname: Du
authors.forename: Jian
authors.initials: J
authors.lastname: Ma
authors.forename: Ge
authors.initials: G
authors.lastname: Jin
authors.forename: Zeng-Bing
authors.initials: ZB
authors.lastname: Chen
authors.forename: Jun
authors.initials: J
authors.lastname: Zhang
authors.forename: Jian-Wei
authors.initials: JW
authors.lastname: Pan
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D055096:Optical Devices; D010720:Phosphines; D017785:Photons; D011789:Quantum Theory
chemical_list: D001152:Arsenicals; D010720:Phosphines; D007204:Indium; D005708:Gallium; C090882:indium phosphide