title: Interplay between crystal phase purity and radial growth in InP nanowires.
abstract: The interplay between crystal phase purity and radial growth in InP nanowires is investigated. By modifying the growth rate and V/III ratio, regions of high or low stacking fault density can be controllably introduced into wurtzite nanowires. It is found that regions with high stacking fault density encourage radial growth. Through careful choice of growth conditions pure wurtzite InP nanowires are then grown which exhibit narrow 4.2 K photoluminescence linewidths of 3.7 meV at 1.490 meV, and no evidence of emission related to stacking faults or zincblende insertions.
authors.affiliation: National Research Council Canada, Ottawa, Canada. Philip.Poole@nrc-cnrc.gc.ca
authors.forename: P J
authors.initials: PJ
authors.lastname: Poole
authors.forename: D
authors.initials: D
authors.lastname: Dalacu
authors.forename: X
authors.initials: X
authors.lastname: Wu
authors.forename: J
authors.initials: J
authors.lastname: Lapointe
authors.forename: K
authors.initials: K
authors.lastname: Mnaymneh
mesh_terms: D003460:Crystallization / Q000379:methods*; D007204:Indium / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D010720:Phosphines / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D046911:Macromolecular Substances; D010720:Phosphines; D007204:Indium; C090882:indium phosphide