title: Fractionally δ-doped oxide superlattices for higher carrier mobilities.
abstract: A two-dimensional (2D) electron gas system in an oxide heterostructure serves as an important playground for novel phenomena. Here, we show that, by using fractional δ-doping to control the interface's composition in La(x)Sr(1-x)TiO(3)/SrTiO(3) artificial oxide superlattices, the filling-controlled 2D insulator-metal transition can be realized. The atomic-scale control of d-electron band filling, which in turn contributes to the tuning of effective mass and density of the charge carriers, is found to be a fascinating route to substantially enhanced carrier mobilities.
authors.affiliation: Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States.
authors.forename: Woo Seok
authors.initials: WS
authors.lastname: Choi
authors.forename: Suyoun
authors.initials: S
authors.lastname: Lee
authors.forename: Valentino R
authors.initials: VR
authors.lastname: Cooper
authors.forename: Ho Nyung
authors.initials: HN
authors.lastname: Lee
mesh_terms: D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D004579:Electron Transport; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008670:Metals / Q000737:chemistry*; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010087:Oxides / Q000737:chemistry*; D010316:Particle Size; D013499:Surface Properties
chemical_list: D046911:Macromolecular Substances; D008670:Metals; D010087:Oxides