title: The role of zinc vacancies in bipolar resistance switching of Ag/ZnO/Pt memory structures.
abstract: We have presented a study of the bipolar resistance switching characteristics in the Ag/ZnO/Pt cell. This switching is accompanied by a change in intensity of the photoluminescence emission at 3.33 eV which is attributed to zinc vacancy related transitions in ZnO film. Besides voltage-driven resistance switching phenomena, a transition from a high-resistance state to a lower one is observed under laser illumination at low temperature. These results demonstrate that the bipolar resistance switching can originate due to an electron trapping/de-trapping process at zinc-vacancy defects localized in the interface layer. The Mott metal-insulator transition is proposed as a possible mechanism of the memory effect.
authors.affiliation: Division of Quantum Phases and Devices, School of Physics, Konkuk University, Seoul, Korea. yalvad@yahoo.com
authors.forename: Vadim Sh
authors.initials: VSh
authors.lastname: Yalishev
authors.forename: Shavkat U
authors.initials: SU
authors.lastname: Yuldashev
authors.forename: Yeon Soo
authors.initials: YS
authors.lastname: Kim
authors.forename: Bae Ho
authors.initials: BH
authors.lastname: Park