title: A facile route to recover intrinsic graphene over large scale.
abstract: The intrinsic properties of initially p-type doped graphene (grown by chemical vapor deposition (CVD)) can be recovered by buffered oxide etch (BOE) treatment, and the dominant factor governing p-type doping is identified as the H(2)O/O(2) redox system. Semi-ionic C-F bonding prevents the reaction between the products of the H(2)O/O(2) redox system and graphene. BOE-treated graphene field effect transistors (FETs) subsequently exposed to air, became p-type doped due to recovery of the H(2)O/O(2) redox system. In comparison, poly(methyl methacrylate) (PMMA)-coated graphene FETs had improved stability for maintaining the intrinsic graphene electronic properties.
authors.affiliation: SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon 440746, Republic of Korea.
authors.forename: Dong-Wook
authors.initials: DW
authors.lastname: Shin
authors.forename: Hyun Myoung
authors.initials: HM
authors.lastname: Lee
authors.forename: Seong Man
authors.initials: SM
authors.lastname: Yu
authors.forename: Kwang-Soo
authors.initials: KS
authors.lastname: Lim
authors.forename: Jae Hoon
authors.initials: JH
authors.lastname: Jung
authors.forename: Min-Kyu
authors.initials: MK
authors.lastname: Kim
authors.forename: Sang-Woo
authors.initials: SW
authors.lastname: Kim
authors.forename: Jae-Hee
authors.initials: JH
authors.lastname: Han
authors.forename: Rodney S
authors.initials: RS
authors.lastname: Ruoff
authors.forename: Ji-Beom
authors.initials: JB
authors.lastname: Yoo
mesh_terms: D004553:Electric Conductivity; D006108:Graphite / Q000737:chemistry* / Q000302:isolation & purification*; D008422:Materials Testing; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010087:Oxides / Q000737:chemistry*; D010316:Particle Size
chemical_list: D010087:Oxides; D006108:Graphite