title: Near-infrared quantum dot light emitting diodes employing electron transport nanocrystals in a layered architecture.
abstract: PbSe quantum dot light emitting diodes (QD-LEDs) of a multi-layer architecture are reported in the present work to exhibit high external quantum efficiencies. In these devices, a ligand replacement technique was employed to activate PbSe QDs, and ZnO nanoparticles were used for the electron transport layer. The emission wavelength of this solution processed device is QD size tunable over a broad spectral range, and an LED efficiency of 0.73% was measured at 1412 nm. Higher efficiencies at longer wavelengths are also inferred from spectral characterization.
authors.affiliation: Engineering Science and Mechanics, The Pennsylvania State University, University Park, PA, USA.
authors.forename: Wenjia
authors.initials: W
authors.lastname: Hu
authors.forename: Ron
authors.initials: R
authors.lastname: Henderson
authors.forename: Yu
authors.initials: Y
authors.lastname: Zhang
authors.forename: Guanjun
authors.initials: G
authors.lastname: You
authors.forename: Lai
authors.initials: L
authors.lastname: Wei
authors.forename: Yangbo
authors.initials: Y
authors.lastname: Bai
authors.forename: Jingkang
authors.initials: J
authors.lastname: Wang
authors.forename: Jian
authors.initials: J
authors.lastname: Xu