title: Image simulation for atomic resolution secondary electron image.
abstract: It has been demonstrated recently that an atomic resolution secondary electron (SE) image can be achieved with a scanning transmission electron microscope (STEM) equipped with a probe-aberration corrector. Its high sensitivity to the surface structure provides a powerful tool to simultaneously study both surface and bulk structure in the STEM, in the combination with the annular dark field (ADF) image. To quantitatively explain the atomic resolution SE image and retrieve surface-structure information, an image simulation is required. Here, we develop a method to simultaneously calculate, for the first time, the atomic resolution SE and ADF-STEM images, based on the multislice method with a frozen-phonon approximation. An object function for secondary electrons, derived from the inelastic scattering, is used to calculate the intensity distribution of the secondary electrons emitted from each slice. The simulations show that the SE image contrast is sensitive to the surface structure and the electron inelastic mean free path, but insensitive to specimen thickness when the thickness is more than 5 nm. The simulated SE images for SrTiO(3) crystal show good agreement with the experimental observations.
authors.affiliation: Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton NY 11973, USA.
authors.forename: Lijun
authors.initials: L
authors.lastname: Wu
authors.forename: R F
authors.initials: RF
authors.lastname: Egerton
authors.forename: Yimei
authors.initials: Y
authors.lastname: Zhu
mesh_terms: D003198:Computer Simulation; D004583:Electrons; D017348:Microscopy, Electron, Scanning Transmission / Q000379:methods*; D060739:Phonons