title: Nanoscale avalanche photodiode with self-quenching and ultrahigh ultraviolet/visible rejection ratio.
abstract: A 4H-SiC based separate-absorption-multiplication (SAM) avalanche photodiode with a nanoscale multiplication region and a bulk absorption region is proposed and its optoelectronic performance is modeled. The results show that the avalanche breakdown voltage of the device is found to be dependent on the illumination condition. This is attributed to the existence of an illumination-dependent hole potential well in the upper center of the absorption region. Based on the illumination-dependence of avalanche breakdown voltage, a self-quenching and an ultrahigh UV/visible rejection ratio have been realized in this structure.
authors.affiliation: Physics and Mechanical & Electrical Engineering School, Xiamen University, Xiamen, 361005 Fujian, China.
authors.forename: Rongdun
authors.initials: R
authors.lastname: Hong
authors.forename: Yi
authors.initials: Y
authors.lastname: Zhou
authors.forename: Yannan
authors.initials: Y
authors.lastname: Xie
authors.forename: Xiaping
authors.initials: X
authors.lastname: Chen
authors.forename: Zifeng
authors.initials: Z
authors.lastname: Zhang
authors.forename: Kang L
authors.initials: KL
authors.lastname: Wang
authors.forename: Zhengyun
authors.initials: Z
authors.lastname: Wu