title: Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires.
abstract: The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material, the NWs exhibit a long conductivity lifetime (>2 ns) and a high mobility (820 ± 120 cm(2)/(V s)). This is due to the weak influence of surface traps with respect to other III-V semiconducting NWs and to the favorable crystalline structure of the NWs achieved via strain-relieved growth.
authors.affiliation: Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, Australia. patrick.parkinson@anu.edu.au
authors.forename: Patrick
authors.initials: P
authors.lastname: Parkinson
authors.forename: Christopher
authors.initials: C
authors.lastname: Dodson
authors.forename: Hannah J
authors.initials: HJ
authors.lastname: Joyce
authors.forename: Kris A
authors.initials: KA
authors.lastname: Bertness
authors.forename: Norman A
authors.initials: NA
authors.lastname: Sanford
authors.forename: Laura M
authors.initials: LM
authors.lastname: Herz
authors.forename: Michael B
authors.initials: MB
authors.lastname: Johnston
mesh_terms: D004553:Electric Conductivity; D005708:Gallium / Q000737:chemistry*; D008422:Materials Testing / Q000379:methods*; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D055672:Static Electricity
chemical_list: C473348:gallium nitride; D005708:Gallium