title: Enhancement of surface emission in deep ultraviolet AlGaN-based light emitting diodes with staggered quantum wells.
abstract: The optical polarization properties of staggered AlGaN-AlGaN/AlN quantum wells (QWs) are investigated using the theoretical model based on the k·p method. The numerical results show that the energy level order and coupling relation of the valence subband structure change in the staggered QWs and the trend is beneficial to TE polarized transition compared to that of conventional AlGaN/AlN QWs. As a result, the staggered QWs have much stronger TE-polarized emission than conventional AlGaN-based QWs, which can enhance the surface emission of deep ultraviolet (DUV) light-emitting diodes (LEDs). The polarization control by using staggered QWs can be applied in high efficiency DUV AlGaN-based LEDs.
authors.affiliation: The State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: Huimin
authors.initials: H
authors.lastname: Lu
authors.forename: Tongjun
authors.initials: T
authors.lastname: Yu
authors.forename: Gangcheng
authors.initials: G
authors.lastname: Yuan
authors.forename: Xinjuan
authors.initials: X
authors.lastname: Chen
authors.forename: Zhizhong
authors.initials: Z
authors.lastname: Chen
authors.forename: Genxiang
authors.initials: G
authors.lastname: Chen
authors.forename: Guoyi
authors.initials: G
authors.lastname: Zhang
mesh_terms: D017607:Aluminum Compounds / Q000737:chemistry*; D005708:Gallium / Q000737:chemistry*; D012666:Semiconductors; D013499:Surface Properties; D014466:Ultraviolet Rays
chemical_list: D017607:Aluminum Compounds; C513700:aluminum gallium nitride; D005708:Gallium