title: Enhanced photocurrents of photosystem I films on p-doped silicon.
abstract: Tuning the Fermi energy of silicon through doping leads to alignment of silicon bands with the redox active sites of photosystem I. Integrating photosystem I films with p-doped silicon results in the highest reported photocurrent enhancement for a biohybrid electrode based on photosystem I.
authors.affiliation: Department of Chemistry, Vanderbilt University, Nashville, TN 37235-1822, USA.
authors.forename: Gabriel
authors.initials: G
authors.lastname: LeBlanc
authors.forename: Gongping
authors.initials: G
authors.lastname: Chen
authors.forename: Evan A
authors.initials: EA
authors.lastname: Gizzie
authors.forename: G Kane
authors.initials: GK
authors.lastname: Jennings
authors.forename: David E
authors.initials: DE
authors.lastname: Cliffel
mesh_terms: D004574:Electromagnetic Fields; D008422:Materials Testing; D045331:Photosystem I Protein Complex / Q000737:chemistry* / Q000528:radiation effects*; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry* / Q000528:radiation effects*
chemical_list: D045331:Photosystem I Protein Complex; D012825:Silicon