title: Photoluminescence enhancement in CdS quantum dots by thermal annealing.
abstract: The photoluminescence behavior of CdS quantum dots in initial growth stage was studied in connection with an annealing process. Compared to the as-synthesized CdS quantum dots (quantum efficiency ≅ 1%), the heat-treated sample showed enhanced luminescence properties (quantum efficiency ≅ 29%) with a narrow band-edge emission. The simple annealing process diminished the accumulated defect states within the nanoparticles and thereby reduced the nonradiative recombination, which was confirmed by diffraction, absorption, and time-resolved photoluminescence. Consequently, the highly luminescent and defect-free nanoparticles were obtained by a facile and straightforward process.
authors.affiliation: WCU Hybrid Materials Program, Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 151-744, South Korea. byungwoo@snu.ac.kr.
authors.forename: Jae Ik
authors.initials: JI
authors.lastname: Kim
authors.forename: Jongmin
authors.initials: J
authors.lastname: Kim
authors.forename: Junhee
authors.initials: J
authors.lastname: Lee
authors.forename: Dae-Ryong
authors.initials: DR
authors.lastname: Jung
authors.forename: Hoechang
authors.initials: H
authors.lastname: Kim
authors.forename: Hongsik
authors.initials: H
authors.lastname: Choi
authors.forename: Sungjun
authors.initials: S
authors.lastname: Lee
authors.forename: Sujin
authors.initials: S
authors.lastname: Byun
authors.forename: Suji
authors.initials: S
authors.lastname: Kang
authors.forename: Byungwoo
authors.initials: B
authors.lastname: Park