title: Infrared photodetectors based on CVD-grown graphene and PbS quantum dots with ultrahigh responsivity.
abstract: Infrared photodetectors based on single-layer CVD-grown graphene and PbS quantum dots, which are fabricated by solution processing, show ultrahigh responsivities of up to 10(7)  A/W under infrared light illumination. The devices fabricated on flexible plastic substrates have excellent bending stability. The photoresponse is attributed to the field-effect doping in graphene films induced by negative charges generated in the quantum dots.
authors.affiliation: Department of Applied Physics and Materials, Research Centre, The Hong Kong Polytechnic University, Hong Kong, China.
authors.forename: Zhenhua
authors.initials: Z
authors.lastname: Sun
authors.forename: Zhike
authors.initials: Z
authors.lastname: Liu
authors.forename: Jinhua
authors.initials: J
authors.lastname: Li
authors.forename: Guo-An
authors.initials: GA
authors.lastname: Tai
authors.forename: Shu-Ping
authors.initials: SP
authors.lastname: Lau
authors.forename: Feng
authors.initials: F
authors.lastname: Yan
mesh_terms: D006108:Graphite / Q000737:chemistry*; D007259:Infrared Rays; D007854:Lead / Q000737:chemistry*; D045663:Quantum Dots; D013440:Sulfides / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D013440:Sulfides; C018391:lead sulfide; D007854:Lead; D006108:Graphite