title: High current density and nonlinearity combination of selection device based on TaO(x)/TiO2/TaO(x) structure for one selector-one resistor arrays.
abstract: We demonstrate a high-performance selection device by utilizing the concept of crested oxide barrier to suppress the sneak current in bipolar resistive memory arrays. Using a TaO(x)/TiO(2)/TaO(x) structure, high current density over 10(7) A cm(-2) and excellent nonlinear characteristics up to 10(4) were successfully demonstrated. On the basis of the defect chemistry and SIMS depth profile result, we found that some Ta atoms gradually diffused into TiO(2) film, and consequently, the energy band of the TiO(2) film was symmetrically bent at the top and bottom TaO(x)/TiO(2) interfaces and modified as a crested oxide barrier. Furthermore, the one selector-one resistor device exhibited significant suppression of the leakage current, indicating excellent selector characteristics.
authors.affiliation: School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong, Buk-gu, Gwangju 500-712, Republic of Korea.
authors.forename: Wootae
authors.initials: W
authors.lastname: Lee
authors.forename: Jubong
authors.initials: J
authors.lastname: Park
authors.forename: Seonghyun
authors.initials: S
authors.lastname: Kim
authors.forename: Jiyong
authors.initials: J
authors.lastname: Woo
authors.forename: Jungho
authors.initials: J
authors.lastname: Shin
authors.forename: Godeuni
authors.initials: G
authors.lastname: Choi
authors.forename: Sangsu
authors.initials: S
authors.lastname: Park
authors.forename: Daeseok
authors.initials: D
authors.lastname: Lee
authors.forename: Euijun
authors.initials: E
authors.lastname: Cha
authors.forename: Byoung Hun
authors.initials: BH
authors.lastname: Lee
authors.forename: Hyunsang
authors.initials: H
authors.lastname: Hwang
mesh_terms: D017097:Electric Impedance; D004574:Electromagnetic Fields; D004581:Electronics / Q000295:instrumentation*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008422:Materials Testing; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000295:instrumentation*; D017711:Nonlinear Dynamics; D010087:Oxides / Q000737:chemistry*; D010316:Particle Size; D013635:Tantalum / Q000737:chemistry*; D014025:Titanium / Q000737:chemistry*
chemical_list: D010087:Oxides; C009495:titanium dioxide; D013635:Tantalum; D014025:Titanium; C078151:tantalum oxide