title: Simulations about self-absorption of tritium in titanium tritide and the energy deposition in a silicon Schottky barrier diode.
abstract: Simulations on the self-absorption of tritium electrons in titanium tritide films and the energy deposition in a silicon Schottky barrier diode are carried out using the Geant4 radiation transport toolkit. Energy consumed in each part of the Schottky radiovoltaic battery is simulated to give a clue about how to make the battery work better. The power and energy-conversion efficiency of the tritium silicon Schottky radiovoltaic battery in an optimized design are simulated. Good consistency with experiments is obtained.
authors.affiliation: Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, China. howardleolee@163.com
authors.forename: Hao
authors.initials: H
authors.lastname: Li
authors.forename: Yebing
authors.initials: Y
authors.lastname: Liu
authors.forename: Rui
authors.initials: R
authors.lastname: Hu
authors.forename: Yuqing
authors.initials: Y
authors.lastname: Yang
authors.forename: Guanquan
authors.initials: G
authors.lastname: Wang
authors.forename: Zhengkun
authors.initials: Z
authors.lastname: Zhong
authors.forename: Shunzhong
authors.initials: S
authors.lastname: Luo