title: Light absorption engineering of hydrogenated nanocrystalline silicon by femtosecond laser.
abstract: The light absorption coefficient of hydrogenated nanocrystalline silicon has been engineered to have a Gaussian distribution by means of absorption modification using a femtosecond laser. The absorption-modified sample exhibits a significant absorption enhancement of up to ∼700%, and the strong absorption does not depend on the incident light. We propose a model responsible for this interesting behavior. In addition, we present an optical limiter constructed through this absorption engineering method.
authors.affiliation: Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics, Shanghai Jiao Tong University, Shanghai, China.
authors.forename: D Q
authors.initials: DQ
authors.lastname: Zheng
authors.forename: Y J
authors.initials: YJ
authors.lastname: Ma
authors.forename: L
authors.initials: L
authors.lastname: Xu
authors.forename: W A
authors.initials: WA
authors.lastname: Su
authors.forename: Q H
authors.initials: QH
authors.lastname: Ye
authors.forename: J I
authors.initials: JI
authors.lastname: Oh
authors.forename: W Z
authors.initials: WZ
authors.lastname: Shen