title: Co-integration of nano-scale vertical- and horizontal-channel metal-oxide-semiconductor field-effect transistors for low power CMOS technology.
abstract: In order to extend the conventional low power Si CMOS technology beyond the 20-nm node without SOI substrates, we propose a novel co-integration scheme to build horizontal- and vertical-channel MOSFETs together and verify the idea using TCAD simulations. From the fabrication viewpoint, it is highlighted that this scheme provides additional vertical devices with good scalability by adding a few steps to the conventional CMOS process flow for fin formation. In addition, the benefits of the co-integrated vertical devices are investigated using a TCAD device simulation. From this study, it is confirmed that the vertical device shows improved off-current control and a larger drive current when the body dimension is less than 20 nm, due to the electric field coupling effect at the double-gated channel. Finally, the benefits from the circuit design viewpoint, such as the larger midpoint gain and beta and lower power consumption, are confirmed by the mixed-mode circuit simulation study.
authors.affiliation: Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National University, Seoul 151-744, South Korea.
authors.forename: Min-Chul
authors.initials: MC
authors.lastname: Sun
authors.forename: Garam
authors.initials: G
authors.lastname: Kim
authors.forename: Sang Wan
authors.initials: SW
authors.lastname: Kim
authors.forename: Hyun Woo
authors.initials: HW
authors.lastname: Kim
authors.forename: Hyungjin
authors.initials: H
authors.lastname: Kim
authors.forename: Jong-Ho
authors.initials: JH
authors.lastname: Lee
authors.forename: Hyungcheol
authors.initials: H
authors.lastname: Shin
authors.forename: Byung-Gook
authors.initials: BG
authors.lastname: Park
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D008670:Metals / Q000737:chemistry*; D036103:Nanotechnology / Q000295:instrumentation*; D010087:Oxides / Q000737:chemistry; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*; D018511:Systems Integration; D014173:Transistors, Electronic
chemical_list: D008670:Metals; D010087:Oxides; D012825:Silicon