title: Influences of Ti film thickness on electrochemical properties of Si/Ti/Cu film electrodes.
abstract: Si and Si/Ti films were fabricated on a Cu current collector (substrate) using the DC sputtering system. The Ti film as a buffer layer was inserted between the Si film and the Cu current collector. Their structural and electrochemical properties were investigated with various Ti film thicknesses of 20-90 nm. The Si and Ti films deposited on a polycrystalline Cu substrate were amorphous. The Si/Ti/Cu film electrode exhibited better electrochemical properties than the Si/Cu electrode in terms of capacity, charge-discharge efficiency, and cycleability. In the Si/Ti/Cu electrode, the film electrode with a 55 nm Ti film thickness showed the best electrochemical properties: 367 microA h/cm2 initial capacity, 91% efficiency, and 50% capacity retention after 100 cycles. These good electrochemical properties are attributed to the enhanced adhesion between the Si and Ti films. Additionally, the modified surface morphology of Si film with a cluster structure could withstand the lateral volume change during the charge-discharge process.
authors.affiliation: School of Nano and Advanced Materials Science and Engineering, Research Institute for Green Energy Convergence Technology, Gyeongsang National University, 501 Jin Ju-Daero, Jin Ju 660-701, Republic of Korea.
authors.forename: Gyu-Bong
authors.initials: GB
authors.lastname: Cho
authors.forename: Sang-Hun
authors.initials: SH
authors.lastname: Lee
authors.forename: Ho-Jin
authors.initials: HJ
authors.lastname: Sung
authors.forename: Jung-Pil
authors.initials: JP
authors.lastname: Noh
authors.forename: Hyo-Jun
authors.initials: HJ
authors.lastname: Ahn
authors.forename: Tae-Hyun
authors.initials: TH
authors.lastname: Nam
authors.forename: Ki-Won
authors.initials: KW
authors.lastname: Kim