title: A novel fabrication method for the nanoscale tunneling field effect transistor.
abstract: Tunneling Field Effect Transistors (TFETs) are considered as a candidate for low power applications. However, most of TFETs have been researched on only for long channels due to the misalignment problem that occurs during the source/drain doping process in device fabrication. Thus, a new method is proposed for the fabrication of TFETs in nanoscale regions. This proposed fabrication process does not need an additional mask to define the source/drain regions, and makes it possible to form a self-aligned source/drain doping process. In addition, through TCAD simulation, the electrical characteristics of a TFET with dopant engineering and a rounded gate edge shape for a higher on/off current ratio were investigated. As a result, the TFET showed the properties of a larger on-current, a lower average subthreshold swing (58.5 mV/dec), and a 30-fold smaller leakage current compared to the conventional TFET The TFET with dopant engineering and a rounded gate edge shape can also be fabricated simply through the proposed fabrication process.
authors.affiliation: Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 151-744, Korea.
authors.forename: Hyun Woo
authors.initials: HW
authors.lastname: Kim
authors.forename: Jang Hyun
authors.initials: JH
authors.lastname: Kim
authors.forename: Sang Wan
authors.initials: SW
authors.lastname: Kim
authors.forename: Min-Chul
authors.initials: MC
authors.lastname: Sun
authors.forename: Garam
authors.initials: G
authors.lastname: Kim
authors.forename: Euyhwan
authors.initials: E
authors.lastname: Park
authors.forename: Hyungjin
authors.initials: H
authors.lastname: Kim
authors.forename: Kyung-Wan
authors.initials: KW
authors.lastname: Kim
authors.forename: Byung-Gook
authors.initials: BG
authors.lastname: Park