title: Silicon nanowire charge-trap memory incorporating self-assembled iron oxide quantum dots.
abstract: Charge-trap non-volatile memory devices based upon the precise integration of quantum dot storage elements with silicon nanowire field-effect transistors are described. Template-assisted assembly yields an ordered array of FeO QDs within the trenches that separate highly aligned SiNWs, and injected charges are reversibly stored via Fowler-Nordheim tunneling into the QDs. Stored charges shift the transistor threshold voltages, providing the basis for a memory device. Quantum dot size is found to strongly influence memory performance metrics.
authors.affiliation: Division of Chemistry and Chemical Engineering, California Institute of Technology, 1200 E. California Blvd, MC 127-72, Pasadena, CA 91125, USA, FAX: (+1) 626-395-2355; Micron Technology, Inc., 3060 N. First Street, San Jose, CA 95134, USA.
authors.forename: Ruo-Gu
authors.initials: RG
authors.lastname: Huang
authors.forename: James R
authors.initials: JR
authors.lastname: Heath