title: Effects of growth parameters on the structural and optical properties of InP/InGaP quantum structures for 808-nm-wavelength emissions.
abstract: InP/InGaP quantum structures with 808-nm-wavelength emissions were grown on semi-insulating GaAs (100) substrates via migration-enhanced molecular beam epitaxy. The effects of the growth conditions on the structural and optical properties of the InP/InGaP quantum structures were investigated. The scanning electron microscopy and atomic force microscopy images showed that the two-dimensional InP/InGaP quantum structures were transited to one-dimensional structures with an increasing repetition cycle. The photoluminescence spectra showed that the optical properties of the InP/InGaP quantum structures were significantly affected by various migration-enhanced epitaxy repetition numbers and growth temperatures. These results can help improve understanding of the effects of growth parameters on the structural and optical properties of InP/InGaP quantum structures for 808-nm-wavelength emissions.
authors.affiliation: Nano Photonics Research Center, Korea Institute of Science and Technology, Seoul 136-791, Korea.
authors.forename: S Y
authors.initials: SY
authors.lastname: Kim
authors.forename: J D
authors.initials: JD
authors.lastname: Song
authors.forename: I K
authors.initials: IK
authors.lastname: Han
authors.forename: T W
authors.initials: TW
authors.lastname: Kim