title: Tailoring of molecular planarity to reduce charge injection barrier for high-performance small-molecule-based ternary memory device with low threshold voltage.
abstract: By introducing a coplanar fluorenone into the center of an azo molecule, the turn-on voltages of the ternary memory devices are significantly decreased to lower than -2 V due to the improved crystallinity and the reduced charge injection barrier. The resulting low-power consumption devices will have great potential applications in high-performance chips for future portable nanoelectronic devices.
authors.affiliation: Key Laboratory of Organic Synthesis of Jiangsu Province, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, P. R. China.
authors.forename: Shifeng
authors.initials: S
authors.lastname: Miao
authors.forename: Hua
authors.initials: H
authors.lastname: Li
authors.forename: Qingfeng
authors.initials: Q
authors.lastname: Xu
authors.forename: Youyong
authors.initials: Y
authors.lastname: Li
authors.forename: Shunjun
authors.initials: S
authors.lastname: Ji
authors.forename: Najun
authors.initials: N
authors.lastname: Li
authors.forename: Lihua
authors.initials: L
authors.lastname: Wang
authors.forename: Junwei
authors.initials: J
authors.lastname: Zheng
authors.forename: Jianmei
authors.initials: J
authors.lastname: Lu
mesh_terms: D001391:Azo Compounds / Q000737:chemistry; D004581:Electronics; D007659:Ketones / Q000737:chemistry; D036103:Nanotechnology; D011789:Quantum Theory; D017971:Tin Compounds / Q000737:chemistry
chemical_list: D001391:Azo Compounds; D007659:Ketones; D017971:Tin Compounds; C109984:indium tin oxide