title: Enhanced light output from the nano-patterned InP semiconductor substrate through the nanoporous alumina mask.
abstract: A significant enhancement in the light output from nano-patterned InP substrate covered with a nanoporous alumina mask was observed. A uniform nanohole array on an InP semiconductor substrate was fabricated by inductively coupled plasma reactive ion etching (ICP-RIE), using the nanoporous alumina mask as a shadow mask. The light output property of the semiconductor substrate was investigated via photoluminescence (PL) intensity measurement. The InP substrate with a nanohole array showed a more enhanced PL intensity compared with the raw InP substrate without a nanohole structure. After ICP-RIE etching, the light output from the nanoporous InP substrate covered with a nanoporous alumina mask showed fourfold enhanced PL intensity compared with the raw InP substrate. These results can be used as a prospective method for increasing the light output efficiency of optoelectronic devices.
authors.affiliation: Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea.
authors.forename: Mi
authors.initials: M
authors.lastname: Jung
authors.forename: Jae Hun
authors.initials: JH
authors.lastname: Kim
authors.forename: Seok
authors.initials: S
authors.lastname: Lee
authors.forename: Byung Jin
authors.initials: BJ
authors.lastname: Jang
authors.forename: Woo Young
authors.initials: WY
authors.lastname: Lee
authors.forename: Yoo-Mi
authors.initials: YM
authors.lastname: Oh
authors.forename: Sun-Woo
authors.initials: SW
authors.lastname: Park
authors.forename: Deokha
authors.initials: D
authors.lastname: Woo