title: Formation of metal and dielectric liners using a solution process for deep trench capacitors.
abstract: We demonstrated the feasibility of metal and dielectric liners using a solution process for deep trench capacitor application. The deep Si trench via with size of 10.3 microm and depth of 71 microm were fabricated by Bosch process in deep reactive ion etch (DRIE) system. The aspect ratio was about 7. Then, nano-Ag ink and poly(4-vinylphenol) (PVPh) were used to form metal and dielectric liners, respectively. The thicknesses of the Ag and PVPh liners were about 144 and 830 nm, respectively. When the curing temperature of Ag film increased from 120 to 150 degrees C, the sheet resistance decreased rapidly from 2.47 to 0.72 Omega/sq and then slightly decreased to 0.6 Omega/sq with further increasing the curing temperature beyond 150 degrees C. The proposed liner formation method using solution process is a simple and cost effective process for the high capacity of deep trench capacitor.
authors.affiliation: Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-700, Korea.
authors.forename: Yong-Hyun
authors.initials: YH
authors.lastname: Ham
authors.forename: Dong-Pyo
authors.initials: DP
authors.lastname: Kim
authors.forename: Kyu-Ha
authors.initials: KH
authors.lastname: Baek
authors.forename: Kun-Sik
authors.initials: KS
authors.lastname: Park
authors.forename: Moonkeun
authors.initials: M
authors.lastname: Kim
authors.forename: Kwang-Ho
authors.initials: KH
authors.lastname: Kwon
authors.forename: Hong-Sik
authors.initials: HS
authors.lastname: Shin
authors.forename: Kijun
authors.initials: K
authors.lastname: Lee
authors.forename: Lee-Mi
authors.initials: LM
authors.lastname: Do