title: Characterization of the SnO2 based thin film transistors with Ga, In and Hf doping.
abstract: We investigated the effects of doping tin oxide thin film transistors (TFTs) with Ga, In, and Hf. The quantity of doping impurities added to the SnO2-TFT channel layer was as follows: Ga (6.3-21.4 at.%), In (9.6-55.6 at.%), and Hf (1.2-2.7 at.%). Hafnium and gallium doping of SnO2 thin film decreased the carrier concentration, possibly due to a decrease in field effect mobility, and reduced oxygen vacancy-related defects. Indium-doped SnO2-TFTs exhibited high performance with a high field-effect mobility of > 20 cm2 V(-1) s(-1). The current on/off ratio and the subthreshold swing of In-doped SnO2-TFTs was 1 x 10(9) and 0.5 V/decade, respectively. These results demonstrate that Ga, In, and Hf doping can effectively enhance the performance of SnO2-based TFT devices.
authors.affiliation: Department of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea.
authors.forename: Sae-Young
authors.initials: SY
authors.lastname: Shin
authors.forename: Yeon-Keon
authors.initials: YK
authors.lastname: Moon
authors.forename: Woong-Sun
authors.initials: WS
authors.lastname: Kim
authors.forename: Sang-Ho
authors.initials: SH
authors.lastname: Lee
authors.forename: Jong-Wan
authors.initials: JW
authors.lastname: Park