title: Probing temperature-driven flow lines in a gated two-dimensional electron gas with tunable spin-splitting.
abstract: We study the temperature flow of conductivities in a gated GaAs two-dimensional electron gas (2DEG) containing self-assembled InAs dots and compare the results with recent theoretical predictions. By changing the gate voltage, we are able to tune the 2DEG density and thus vary disorder and spin-splitting. Data for both the spin-resolved and spin-degenerate phase transitions are presented, the former collapsing to the latter with decreasing gate voltage and/or decreasing spin-splitting. The experimental results support a recent theory, based on modular symmetry, which predicts how the critical Hall conductivity varies with spin-splitting.
authors.affiliation: Department of Physics, National Taiwan University, Taipei 106, Taiwan.
authors.forename: Yi-Ting
authors.initials: YT
authors.lastname: Wang
authors.forename: Gil-Ho
authors.initials: GH
authors.lastname: Kim
authors.forename: C F
authors.initials: CF
authors.lastname: Huang
authors.forename: Shun-Tsung
authors.initials: ST
authors.lastname: Lo
authors.forename: Wei-Jen
authors.initials: WJ
authors.lastname: Chen
authors.forename: J T
authors.initials: JT
authors.lastname: Nicholls
authors.forename: Li-Hung
authors.initials: LH
authors.lastname: Lin
authors.forename: D A
authors.initials: DA
authors.lastname: Ritchie
authors.forename: Y H
authors.initials: YH
authors.lastname: Chang
authors.forename: C-T
authors.initials: CT
authors.lastname: Liang
authors.forename: B P
authors.initials: BP
authors.lastname: Dolan
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D003198:Computer Simulation; D004579:Electron Transport; D005708:Gallium / Q000737:chemistry*; D005740:Gases / Q000737:chemistry*; D008956:Models, Chemical; D012212:Rheology / Q000379:methods*; D013696:Temperature
chemical_list: D001152:Arsenicals; D005740:Gases; C043055:gallium arsenide; D005708:Gallium