title: In/Ga inter-diffusion in InAs quantum dot in InGaAs/GaAs asymmetric quantum well.
abstract: The Photoluminescence spectra (PL), their temperature and power dependence were investigated for the ground state in InAs quantum dots (QDs) embedded in InGaAs asymmetric quantum well (Asym. QW). In-atom segregation is well known phenomena in such structures, which result in altering the inter-atomic distances; as a consequence the thermo-dynamical parameters change as well, namely Debye temperature. The bigger value of Debye temperature for the studied sample with respect to the corresponding bulk value is attributed to In/Ga inter-diffusion during growth. The inter-diffusion process causes non-radiative defects in the sample. As a consequence, rapid decrease in the QDs integrated emission intensity as the temperature increases was occurred.
authors.affiliation: Nano Photonics Research Center Korea Institute of Science and Technology, Seoul 136-791, Korea.
authors.forename: M H
authors.initials: MH
authors.lastname: Abdellatif
authors.forename: Jin Dong
authors.initials: JD
authors.lastname: Song
authors.forename: Won Jun
authors.initials: WJ
authors.lastname: Choi
authors.forename: Nam Ki
authors.initials: NK
authors.lastname: Cho