title: Few-layer graphene direct deposition on Ni and Cu foil by cold-wall chemical vapor deposition.
abstract: We report an alternative synthesis process, cold-wall thermal chemical vapor deposition (CVD), is replied to directly deposit single-layer and few-layer graphene films on Ar plasma treated Ni and Cu foils using CH4 as carbon source. Through optimizing the process parameters, large scale single-layer graphene grown on Ni foil is comparable to that grown on Cu foil. The graphene films were able to be transferred to other substrates such as SiO2/Si, flexible transparent PET and verified by optical microscopy, Raman microscopy and scanning electron microscopy. The sheet resistance and transmission of the transferred graphene films on PET substrate were also discussed.
authors.affiliation: Key Laboratory of Optoelectronic Materials and Device, Department of Physics, Shanghai Normal University, Shanghai 200234, China.
authors.forename: Q H
authors.initials: QH
authors.lastname: Chang
authors.forename: G L
authors.initials: GL
authors.lastname: Guo
authors.forename: T
authors.initials: T
authors.lastname: Wang
authors.forename: L C
authors.initials: LC
authors.lastname: Ji
authors.forename: L
authors.initials: L
authors.lastname: Huang
authors.forename: B
authors.initials: B
authors.lastname: Ling
authors.forename: H F
authors.initials: HF
authors.lastname: Yang