title: High-performance polycrystalline silicon thin-film transistors with two-dimensional location control of the grain boundary via excimer laser crystallization.
abstract: High-performance low-temperature polycrystalline silicon (Poly-Si) thin-film transistors (TFTs) have been fabricated with two-dimensional (2-D) location-controlled grain boundaries using excimer laser crystallization (ELC). By locally increased thickness of the amorphous silicon (a-Si) film that was served as the seed crystals with a partial-melting crystallization scheme, the cross-shaped grain boundary structures were produced between the thicker a-Si grids. The Poly-Si TFTs with one parallel and one perpendicular grain boundary along the channel direction could therefore be fabricated to reach excellent field-effect mobility of 530 cm2/V-s while the conventional ones exhibited field-effect mobility of 198 cm2/V-s. Furthermore, the proposed TFTs achieved not only superior electric properties but also improved uniformity as compared with the conventional ones owing to the artificially controlled locations of grain boundaries.
authors.affiliation: Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, 300, Taiwan.
authors.forename: Chao-Lung
authors.initials: CL
authors.lastname: Wang
authors.forename: I-Che
authors.initials: IC
authors.lastname: Lee
authors.forename: Chun-Yu
authors.initials: CY
authors.lastname: Wu
authors.forename: Chan-Yu
authors.initials: CY
authors.lastname: Liao
authors.forename: Yu-Ting
authors.initials: YT
authors.lastname: Cheng
authors.forename: Huang-Chung
authors.initials: HC
authors.lastname: Cheng