title: Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability.
abstract: The hydride vapor phase epitaxy (HVPE) process exhibits unexpected properties when growing GaN semiconductor nanowires (NWs). With respect to the classical well-known methods such as metal organic vapor phase epitaxy and molecular beam epitaxy, this near-equilibrium process based on hot wall reactor technology enables the synthesis of nanowires with a constant cylinder shape over unusual length. Catalyst-assisted HVPE shows a record short time process (less than 20 min) coupled to very low precursor consumption. NWs are grown at a fast solidification rate (50 μm h(-1)), facilitated by the high decomposition frequency of the chloride molecules involved in the HVPE process as element III precursors. In this work growth temperature and V/III ratio were investigated to determine the growth mechanism which led to such long NWs. Analysis based on the Ni-Ga phase diagram and the growth kinetics of near-equilibrium HVPE is proposed.
authors.affiliation: Clermont Université, Université Blaise Pascal, Institut Pascal, BP 10448, F-63000 Clermont-Ferrand, France. kaddour.lekhal@univ-bpclermont.fr
authors.forename: K
authors.initials: K
authors.lastname: Lekhal
authors.forename: G
authors.initials: G
authors.lastname: Avit
authors.forename: Y
authors.initials: Y
authors.lastname: André
authors.forename: A
authors.initials: A
authors.lastname: Trassoudaine
authors.forename: E
authors.initials: E
authors.lastname: Gil
authors.forename: C
authors.initials: C
authors.lastname: Varenne
authors.forename: C
authors.initials: C
authors.lastname: Bougerol
authors.forename: G
authors.initials: G
authors.lastname: Monier
authors.forename: D
authors.initials: D
authors.lastname: Castelluci