title: Structural variations of Si1-xCx and their light absorption controllability.
abstract: The emergence of third-generation photovoltaics based on Si relies on tunable bandgap materials with embedded nanocrystalline Si. One of the most promising approaches is based on the mixed-phase Si1 - xCx. We have investigated the light absorption controllability of nanocrystalline Si-embedded Si1 - xCx produced by thermal annealing of the Si-rich Si1 - xCx and composition-modulated superlattice structure. In addition, stoichiometric SiC was also investigated to comparatively analyze the characteristic differences. As a result, it was found that stoichiometric changes of the matrix material and incorporation of oxygen play key roles in light absorption controllability. Based on the results of this work and literature, a design strategy of nanocrystalline Si-embedded absorber materials for third-generation photovoltaics is discussed.
authors.affiliation: KIER-UNIST Advanced Center for Energy, Korea Institute of Energy Research, 152 Gajeong-ro, Yuseong-gu, Daejeon, 305-343, South Korea. sjbaik@hknu.ac.kr.
authors.forename: Jihyun
authors.initials: J
authors.lastname: Moon
authors.forename: Seung Jae
authors.initials: SJ
authors.lastname: Baik
authors.forename: Byungsung
authors.initials: B
authors.lastname: O
authors.forename: Jeong Chul
authors.initials: JC
authors.lastname: Lee