title: Novel palladium germanide schottky contact for high performance schottky barrier ge MOSFETs and characterization of its leakage current mechanism.
abstract: The leakage current mechanism of Palladium (Pd) germanide Schottky contact on n-type Ge-on-Si substrate is analyzed in depth. The electric field dependent analysis shows that the dominant leakage current mechanism is the Poole-Frenkel emission due to the existence of deep level traps in the depletion region of the Pd germanide/n-type Ge Schottky diode. The analysis of the dependence of leakage current on temperature also shows that the Poole-Frenkel emission and generation current are the dominant components below 100 degrees C and that the Schottky emission related to thermionic emission of majority carriers over a potential barrier is the main cause of this dominance at high temperature region.
authors.affiliation: Department of Electronics Engineering, Chungnam National University Daejeon 305-764, Korea.
authors.forename: Se-Kyung
authors.initials: SK
authors.lastname: Oh
authors.forename: Hong-Sik
authors.initials: HS
authors.lastname: Shin
authors.forename: Min-Ho
authors.initials: MH
authors.lastname: Kang
authors.forename: Ga-Won
authors.initials: GW
authors.lastname: Lee
authors.forename: Hi-Deok
authors.initials: HD
authors.lastname: Lee