title: Current-confinement structure and extremely high current density in organic light-emitting transistors.
abstract: Extremely high current densities are realized in single-crystal ambipolar light-emitting transistors using an electron-injection buffer layer and a current-confinement structure via laser etching. Moreover, a linear increase in the luminance was observed at current densities of up to 1 kA cm(-2) , which is an efficiency-preservation improvement of three orders of magnitude over conventional organic light-emitting diodes (OLEDs) at high current densities.
authors.affiliation: Department of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan.
authors.forename: Kosuke
authors.initials: K
authors.lastname: Sawabe
authors.forename: Masaki
authors.initials: M
authors.lastname: Imakawa
authors.forename: Masaki
authors.initials: M
authors.lastname: Nakano
authors.forename: Takeshi
authors.initials: T
authors.lastname: Yamao
authors.forename: Shu
authors.initials: S
authors.lastname: Hotta
authors.forename: Yoshihiro
authors.initials: Y
authors.lastname: Iwasa
authors.forename: Taishi
authors.initials: T
authors.lastname: Takenobu
mesh_terms: D003460:Crystallization; D049449:Luminescence; D009930:Organic Chemicals / Q000737:chemistry*; D019904:Polymethyl Methacrylate / Q000737:chemistry; D012822:Silicon Dioxide / Q000737:chemistry; D013876:Thiophenes / Q000737:chemistry; D014173:Transistors, Electronic
chemical_list: D009930:Organic Chemicals; D013876:Thiophenes; C019101:alpha-terthienyl; D012822:Silicon Dioxide; D019904:Polymethyl Methacrylate