title: Improving the characteristics of an organic nano floating gate memory by a self-assembled monolayer.
abstract: We demonstrate a novel approach to improve the characteristics of the gold nanoparticle-based organic transistor memory devices by using self-assembled monolayers (SAM) with different functional groups as interfacial modifier. SAM-based interfacial engineering significantly improved the hysteresis, memory window, and on/off ratio of a nano floating gate memory (NFGM) at zero gate voltage. This NFGM showed a large memory window of up to 190 V and on/off current ratio of 10(5) during writing and erasing with an operation voltage of 100 V of gate bias in a short time, less than 1 s. Furthermore, the devices show excellent nonvolatile behavior for bistable switching. The ON and OFF state can be stably maintained for 10(3) s with an I(on)/I(off) current ratio of 10(6) for a pentafluorophenyl trimethoxysilane modified device. The results suggested the importance of SAM-modified interface for the memory performance of NFGMs.
authors.affiliation: Department of Chemical Engineering, National Taiwan University, Taipei, Taiwan 106.
authors.forename: Hsuan-Chun
authors.initials: HC
authors.lastname: Chang
authors.forename: Wen-Ya
authors.initials: WY
authors.lastname: Lee
authors.forename: Yian
authors.initials: Y
authors.lastname: Tai
authors.forename: Kuang-Wei
authors.initials: KW
authors.lastname: Wu
authors.forename: Wen-Chang
authors.initials: WC
authors.lastname: Chen