title: The oxides growth during high-temperature oxidation of Si1-xGe(x) nanowires.
abstract: Concerning the oxidation behavior of Si1-xGe(x) (x = 0.15, 0.3) nanowires at high temperature, Si1-xGe(x) nanowires were thermally oxidized for various lengths of time compared with Si nanowires, Si and Si1-xGe(x) thin films. The structural and compositional properties of the oxidized nanowires were characterized using several transmission electron microscopy (TEM) techniques including energy dispersive X-ray spectroscopy (EDS), which confirm that the oxidation rates of Si1-xGe(x) and Si (silicon) nanowires were saturated with increasing oxidation time due to retarding behavior, while the oxidation rate of Si1-xGe(x) nanowires were faster than that of Si nanowires. In addition, the differences in Ge (germanium) content and stress distribution contribute to the observed differences in oxidation behavior.
authors.affiliation: Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Republic of Korea.
authors.forename: Sun-Wook
authors.initials: SW
authors.lastname: Kim
authors.forename: Sang-Yeon
authors.initials: SY
authors.lastname: Kim
authors.forename: Dae-Hong
authors.initials: DH
authors.lastname: Ko