title: Effect of organic buffer layer in the electrical properties of amorphous-indium gallium zinc oxide thin film transistor.
abstract: In this research, we reported on the fabrication of top-contact amorphous-indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with an organic buffer layer between inorganic gate dielectric and active layer in order to improve the electrical properties of devices. By inserting an organic buffer layer, it was possible to make an affirmation of the improvements in the electrical characteristics of a-IGZO TFTs such as subthreshold slope (SS), on/off current ratio (I(ON/OFF)), off-state current, and saturation field-effect mobility (muFE). The a-IGZO TFTs with the cross-linked polyvinyl alcohol (c-PVA) buffer layer exhibited the pronounced improvements of the muFE (17.4 cm2/Vs), SS (0.9 V/decade), and I(ON/OFF) (8.9 x 10(6)).
authors.affiliation: Department of Electronics Engineering, Gachon University, 1342 Seongnam Daero, Soojung-gu, Seongnam, Kyunggi 461-701, Korea.
authors.forename: Jian-Xun
authors.initials: JX
authors.lastname: Wang
authors.forename: Gun Woo
authors.initials: GW
authors.lastname: Hyung
authors.forename: Zhao-Hui
authors.initials: ZH
authors.lastname: Li
authors.forename: Sung-Yong
authors.initials: SY
authors.lastname: Son
authors.forename: Sang Jik
authors.initials: SJ
authors.lastname: Kwon
authors.forename: Young Kwan
authors.initials: YK
authors.lastname: Kim
authors.forename: Eou Sik
authors.initials: ES
authors.lastname: Cho