title: High-performance ZnO thin-film transistors with location-controlled crystal grains fabricated by low-temperature hydrothermal method.
abstract: In this paper, high-performance bottom-gate (BG) thin-film transistors (TFTs) with zinc oxide (ZnO) artificially location-controlled lateral grain growth have been prepared via low-temperature hydrothermal method. For the proper design of source/drain structure of ZnO/Ti/Pt thin films, the grains can be laterally grown from the under-cut ZnO beneath the Ti/Pt layer. Consequently, the single one vertical grain boundary perpendicular to the current flow will be produced in the channel region as the grown grains from the source/drain both sides are impinged. As compared with the conventional sputtered ZnO BG-TFTs, the proposed location-controlled hydrothermal ZnO BG-TFTs (W/L = 250 microm/10 microm) demonstrated the higher field-effect mobility of 6.09 cm2/V x s, lower threshold voltage of 3.67 V, higher on/off current ratio above 10(6), and superior current drivability, reflecting the high-quality ZnO thin films with less grain boundary effect in the channel region.
authors.affiliation: Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan.
authors.forename: Po-Yu
authors.initials: PY
authors.lastname: Yang
authors.forename: Jyh-Liang
authors.initials: JL
authors.lastname: Wang
authors.forename: Wei-Chih
authors.initials: WC
authors.lastname: Tsai
authors.forename: Yu-Cheng
authors.initials: YC
authors.lastname: Chang
authors.forename: Shui-Jinn
authors.initials: SJ
authors.lastname: Wang
authors.forename: I-Che
authors.initials: IC
authors.lastname: Lee
authors.forename: Chao-Lung
authors.initials: CL
authors.lastname: Wang
authors.forename: Yun-Shan
authors.initials: YS
authors.lastname: Chien
authors.forename: Huang-Chung
authors.initials: HC
authors.lastname: Cheng