title: Dry lithography of large-area, thin-film organic semiconductors using frozen CO(2) resists.
abstract: To address the incompatibility of organic semiconductors with traditional photolithography, an inert, frozen CO(2)  resist is demonstrated that forms an in situ shadow mask. Contact with a room-temperature micro-featured stamp is used to pattern the resist. After thin film deposition, the remaining CO(2)  is sublimed to lift off unwanted material. Pixel densities of 325 pixels-per-inch are shown.
authors.affiliation: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, USA. mbahlke@mit.edu
authors.forename: Matthias E
authors.initials: ME
authors.lastname: Bahlke
authors.forename: Hiroshi A
authors.initials: HA
authors.lastname: Mendoza
authors.forename: Daniel T
authors.initials: DT
authors.lastname: Ashall
authors.forename: Allen S
authors.initials: AS
authors.lastname: Yin
authors.forename: Marc A
authors.initials: MA
authors.lastname: Baldo
mesh_terms: D002245:Carbon Dioxide / Q000737:chemistry*; D056831:Coordination Complexes / Q000737:chemistry; D005615:Freezing; D007495:Iridium / Q000737:chemistry; D011789:Quantum Theory; D012666:Semiconductors; D013696:Temperature; D017971:Tin Compounds / Q000737:chemistry
chemical_list: D056831:Coordination Complexes; D017971:Tin Compounds; D002245:Carbon Dioxide; D007495:Iridium; C109984:indium tin oxide