title: High-resolution secondary ion mass spectrometry depth profiling of nanolayers.
abstract: BACKGROUND
  Although the fundamental physical limits for depth resolution of secondary ion mass spectrometry are well understood in theory, the experimental work to achieve and demonstrate them is still ongoing. We report results of high-resolution TOF SIMS (time-of-flight secondary ion mass spectrometry) depth profiling experiments on a nanolayered structure, a stack of 16 alternating MgO and ZnO ~5.5 nm layers grown on a Si substrate by atomic layer deposition.
  
  
  METHODS
  The measurements were performed using a newly developed approach implementing a low-energy direct current normally incident Ar(+) ion beam for ion milling (250 eV and 500 eV energy), in combination with a pulsed 5 keV Ar(+) ion beam at 60° incidence for TOF SIMS analysis. By this optimized arrangement, a noticeably improved version of the dual-beam (DB) approach to TOF SIMS depth profiling is introduced, which can be dubbed gentleDB.
  
  
  RESULTS
  The mixing-roughness-information model was applied to detailed analysis of experimental results. It revealed that the gentleDB approach allows ultimate depth resolution by confining the ion beam mixing length to about two monolayers. This corresponds to the escape depth of secondary ions, the fundamental depth resolution limitation in SIMS. Other parameters deduced from the measured depth profiles indicated that a single layer thickness is equal to 6 nm so that the 'flat' layer thickness d is 3 nm and the interfacial roughness σ is 1.5 nm, thus yielding d + 2σ = 6 nm.
  
  
  CONCLUSIONS
  We have demonstrated that gentleDB TOF SIMS depth profiling with noble gas ion beams is capable of revealing the structural features of a stack of nanolayers, resolving its original surface and estimating the roughness of interlayer interfaces, information which is difficult to obtain by traditional approaches.
authors.affiliation: Materials Science Division, Argonne National Laboratory, 9700 S. Cass Ave., Argonne, IL 60439, USA. sbaryshev@anl.gov
authors.forename: Sergey V
authors.initials: SV
authors.lastname: Baryshev
authors.forename: Alexander V
authors.initials: AV
authors.lastname: Zinovev
authors.forename: C Emil
authors.initials: CE
authors.lastname: Tripa
authors.forename: Michael J
authors.initials: MJ
authors.lastname: Pellin
authors.forename: Qing
authors.initials: Q
authors.lastname: Peng
authors.forename: Jeffrey W
authors.initials: JW
authors.lastname: Elam
authors.forename: Igor V
authors.initials: IV
authors.lastname: Veryovkin