title: Nano-scale stick-slip friction model for the chatter scratch generated by chemical mechanical polishing process.
abstract: Although Chemical Mechanical Planarization (CMP) process is a still promising technology for the fabrication of the next generation devices, CMP-induced defects tackle further development of CMP process. In particular, even nano-sized scratches generated by CMP process kill the device directly. However mechanism of scratch formation was not clearly understood yet. CMP-induced scratches are classified as razor, chatter mark and skipping scratch. Among them, chatter mark scratch (or chatter scratch) is the most critical defect for the device yield loss. Chatter scratch has a periodic pattern of scars, which is reminiscent of a stick-slip friction pattern. Based on that similarity, stick-slip model was proposed in this paper in order to explain how chatter scratch is formed. And controlling parameters for chatter scratch are defined. During stick period the friction force that exceeds the yield strength of wafer surface makes chatter scratch and the distance between chatter marks is determined by slip period.
authors.affiliation: Process Development Team, Semiconductor R&D, Samsung Electronics Co. Ltd San#16 Banwol-Dong, Hwasung-City, Gyeonggi-Do, 445-701, Korea.
authors.forename: Hong Jin
authors.initials: HJ
authors.lastname: Kim
authors.forename: Ji Chul
authors.initials: JC
authors.lastname: Yang
authors.forename: Bo Un
authors.initials: BU
authors.lastname: Yoon
authors.forename: Hyeon-Deok
authors.initials: HD
authors.lastname: Lee
authors.forename: Taesung
authors.initials: T
authors.lastname: Kim