title: Interface-modified unipolar resistive random access memory (RRAM) structure for low-power application.
abstract: An interface-engineered resistive random access memory (RRAM) using bilayer transition metal oxide (TMO) is presented for improving unipolar resistive-switching characteristics. The experiment and simulation data show that better resistive switching characteristics and superb uniformity can be realized by inserting a thin AIOx insertion layer between the Ir/NiO interface. To elucidate the uniformity improvement of our bilayer structure, the conducting-defect effects in the resistive cell were also investigated using a random circuit breaker (RCB) simulation model. It has been verified that the forming and set characteristics are more effectively improved because the conducting-defect ratio in the insertion layer region is low, therefore making it more advantageous for a filament path controllability. Using the optimal oxygen contents in both the insertion layer and the resistive cell, it was confirmed that a significant reduction of up to 0.15 mA of the reset current (I(RESET)) is possible compared to the conventional cell. These results indicate that new AI insertion has a large contribution to the reset and forming processes.
authors.affiliation: Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea.
authors.forename: Kyung-Chang
authors.initials: KC
authors.lastname: Ryoo
authors.forename: Jeong-Hoon
authors.initials: JH
authors.lastname: Oh
authors.forename: Sunghun
authors.initials: S
authors.lastname: Jung
authors.forename: Hongsik
authors.initials: H
authors.lastname: Jeong
authors.forename: Byung-Gook
authors.initials: BG
authors.lastname: Park