title: Valley-spin blockade and spin resonance in carbon nanotubes.
abstract: The manipulation and readout of spin qubits in quantum dots have been successfully achieved using Pauli blockade, which forbids transitions between spin-triplet and spin-singlet states. Compared with spin qubits realized in III-V materials, group IV materials such as silicon and carbon are attractive for this application because of their low decoherence rates (nuclei with zero spins). However, valley degeneracies in the electronic band structure of these materials combined with Coulomb interactions reduce the energy difference between the blocked and unblocked states, significantly weakening the selection rules for Pauli blockade. Recent demonstrations of spin qubits in silicon devices have required strain and spatial confinement to lift the valley degeneracy. In carbon nanotubes, Pauli blockade can be observed by lifting valley degeneracy through disorder, but this makes the confinement potential difficult to control. To achieve Pauli blockade in low-disorder nanotubes, quantum dots have to be made ultrasmall, which is incompatible with conventional fabrication methods. Here, we exploit the bandgap of low-disorder nanotubes to demonstrate robust Pauli blockade based on both valley and spin selection rules. We use a novel stamping technique to create a bent nanotube, in which single-electron spin resonance is detected using the blockade. Our results indicate the feasibility of valley-spin qubits in carbon nanotubes.
authors.affiliation: Kavli Institute of Nanoscience, Delft University of Technology, PO Box 5046, 2600 GA, Delft, The Netherlands.
authors.forename: Fei
authors.initials: F
authors.lastname: Pei
authors.forename: Edward A
authors.initials: EA
authors.lastname: Laird
authors.forename: Gary A
authors.initials: GA
authors.lastname: Steele
authors.forename: Leo P
authors.initials: LP
authors.lastname: Kouwenhoven
mesh_terms: D037742:Nanotubes, Carbon; D045663:Quantum Dots; D012825:Silicon
chemical_list: D037742:Nanotubes, Carbon; D012825:Silicon