title: Detection of a large valley-orbit splitting in silicon with two-donor spectroscopy.
abstract: We measure a large valley-orbit splitting for shallow isolated phosphorus donors in a silicon gated nanowire. This splitting is close to the bulk value and well above previous reports in silicon nanostructures. It was determined using a double dopant transport spectroscopy which eliminates artifacts induced by the environment. Quantitative simulations taking into account the position of the donors with respect to the Si/SiO2 interface and electric field in the wire show that the values found are consistent with the device geometry.
authors.affiliation: SPSMS, UMR-E CEA / UJF-Grenoble 1, INAC, 17 rue des Martyrs, 38054 Grenoble, France.
authors.forename: B
authors.initials: B
authors.lastname: Roche
authors.forename: E
authors.initials: E
authors.lastname: Dupont-Ferrier
authors.forename: B
authors.initials: B
authors.lastname: Voisin
authors.forename: M
authors.initials: M
authors.lastname: Cobian
authors.forename: X
authors.initials: X
authors.lastname: Jehl
authors.forename: R
authors.initials: R
authors.lastname: Wacquez
authors.forename: M
authors.initials: M
authors.lastname: Vinet
authors.forename: Y-M
authors.initials: YM
authors.lastname: Niquet
authors.forename: M
authors.initials: M
authors.lastname: Sanquer