title: Improved transfer of graphene for gated Schottky-junction, vertical, organic, field-effect transistors.
abstract: An improved process for graphene transfer was used to demonstrate high performance graphene enabled vertical organic field effect transistors (G-VFETs). The process reduces disorder and eliminates the polymeric residue that typically plagues transferred films. The method also allows for purposely creating pores in the graphene of a controlled areal density. Transconductance observed in G-VFETs fabricated with a continuous (pore-free) graphene source electrode is attributed to modulation of the contact barrier height between the graphene and organic semiconductor due to a gate field induced Fermi level shift in the low density of electronic-states graphene electrode. Pores introduced in the graphene source electrode are shown to boost the G-VFET performance, which scales with the areal pore density taking advantage of both barrier height lowering and tunnel barrier thinning. Devices with areal pore densities of 20% exhibit on/off ratios and output current densities exceeding 10(6) and 200 mA/cm(2), respectively, at drain voltages below 5 V.
authors.affiliation: Department of Materials Science & Engineering, University of Florida, Gainesville, Florida 32611, USA.
authors.forename: Maxime G
authors.initials: MG
authors.lastname: Lemaitre
authors.forename: Evan P
authors.initials: EP
authors.lastname: Donoghue
authors.forename: Mitchell A
authors.initials: MA
authors.lastname: McCarthy
authors.forename: Bo
authors.initials: B
authors.lastname: Liu
authors.forename: Sefaattin
authors.initials: S
authors.lastname: Tongay
authors.forename: Brent
authors.initials: B
authors.lastname: Gila
authors.forename: Purushottam
authors.initials: P
authors.lastname: Kumar
authors.forename: Rajiv K
authors.initials: RK
authors.lastname: Singh
authors.forename: Bill R
authors.initials: BR
authors.lastname: Appleton
authors.forename: Andrew G
authors.initials: AG
authors.lastname: Rinzler
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D006108:Graphite / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D009930:Organic Chemicals / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D009930:Organic Chemicals; D006108:Graphite