title: Critical behavior of a strongly interacting 2D electron system.
abstract: With decreasing density n(s) the thermopower S of a low-disorder two-dimensional electron system in silicon is found to exhibit a sharp increase by more than an order of magnitude tending to a divergence at a finite disorder-independent density n(t) consistent with the critical form (-T/S) is proportional to (n(s)-n(t))(x) with x=1.0±0.1 (T is the temperature). Our results provide clear evidence for an interaction-induced transition to a new phase at low density in a strongly interacting 2D electron system.
authors.affiliation: Physics Department, Northeastern University, Boston, Massachusetts 02115, USA.
authors.forename: A
authors.initials: A
authors.lastname: Mokashi
authors.forename: S
authors.initials: S
authors.lastname: Li
authors.forename: B
authors.initials: B
authors.lastname: Wen
authors.forename: S V
authors.initials: SV
authors.lastname: Kravchenko
authors.forename: A A
authors.initials: AA
authors.lastname: Shashkin
authors.forename: V T
authors.initials: VT
authors.lastname: Dolgopolov
authors.forename: M P
authors.initials: MP
authors.lastname: Sarachik