title: High performance ambipolar field-effect transistor of random network carbon nanotubes.
abstract: Ambipolar field-effect transistors of random network carbon nanotubes are fabricated from an enriched dispersion utilizing a conjugated polymer as the selective purifying medium. The devices exhibit high mobility values for both holes and electrons (3 cm(2) /V·s) with a high on/off ratio (10(6) ). The performance demonstrates the effectiveness of this process to purify semiconducting nanotubes and to remove the residual polymer.
authors.affiliation: Photophysics and Optoelectronics Group, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen 9747 AG, The Netherlands. s.z.bisri@rug.nl
authors.forename: Satria Zulkarnaen
authors.initials: SZ
authors.lastname: Bisri
authors.forename: Jia
authors.initials: J
authors.lastname: Gao
authors.forename: Vladimir
authors.initials: V
authors.lastname: Derenskyi
authors.forename: Widianta
authors.initials: W
authors.lastname: Gomulya
authors.forename: Igor
authors.initials: I
authors.lastname: Iezhokin
authors.forename: Pavlo
authors.initials: P
authors.lastname: Gordiichuk
authors.forename: Andreas
authors.initials: A
authors.lastname: Herrmann
authors.forename: Maria Antonietta
authors.initials: MA
authors.lastname: Loi
mesh_terms: D004583:Electrons; D037742:Nanotubes, Carbon / Q000737:chemistry*; D011108:Polymers / Q000737:chemistry; D012822:Silicon Dioxide / Q000737:chemistry; D014173:Transistors, Electronic
chemical_list: D037742:Nanotubes, Carbon; D011108:Polymers; D012822:Silicon Dioxide