title: Magnetic Mn5Ge3 nanocrystals embedded in crystalline Ge: a magnet/semiconductor hybrid synthesized by ion implantation.
abstract: The integration of ferromagnetic Mn5Ge3 with the Ge matrix is promising for spin injection in a silicon-compatible geometry. In this paper, we report the preparation of magnetic Mn5Ge3 nanocrystals embedded inside the Ge matrix by Mn ion implantation at elevated temperature. By X-ray diffraction and transmission electron microscopy, we observe crystalline Mn5Ge3 with variable size depending on the Mn ion fluence. The electronic structure of Mn in Mn5Ge3 nanocrystals is a 3d6 configuration, which is the same as that in bulk Mn5Ge3. A large positive magnetoresistance has been observed at low temperatures. It can be explained by the conductivity inhomogeneity in the magnetic/semiconductor hybrid system.
authors.affiliation: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, PO Box 510119, Dresden, 01314, Germany. s.zhou@hzdr.de.
authors.forename: Shengqiang
authors.initials: S
authors.lastname: Zhou
authors.forename: Wenxu
authors.initials: W
authors.lastname: Zhang
authors.forename: Artem
authors.initials: A
authors.lastname: Shalimov
authors.forename: Yutian
authors.initials: Y
authors.lastname: Wang
authors.forename: Zhisuo
authors.initials: Z
authors.lastname: Huang
authors.forename: Danilo
authors.initials: D
authors.lastname: Buerger
authors.forename: Arndt
authors.initials: A
authors.lastname: Mücklich
authors.forename: Wanli
authors.initials: W
authors.lastname: Zhang
authors.forename: Heidemarie
authors.initials: H
authors.lastname: Schmidt
authors.forename: Manfred
authors.initials: M
authors.lastname: Helm