title: Low-voltage organic field effect transistors with a 2-tridecyl[1]benzothieno[3,2-b][1]benzothiophene semiconductor layer.
abstract: An asymmetric n-alkyl substitution pattern was realized in 2-tridecyl[1]benzothieno[3,2-b][1]benzothiophene (C(13)-BTBT) in order to improve the charge transport properties in organic thin-film transistors. We obtained large hole mobilities up to 17.2 cm(2)/(V·s) in low-voltage operating devices. The large mobility is related to densely packed layers of the BTBT π-systems at the channel interface dedicated to the substitution motif and confirmed by X-ray reflectivity measurements. The devices exhibit promising stability in continuous operation for several hours in ambient air.
authors.affiliation: Organic Materials & Devices, Institute of Polymer Materials, Department of Materials Science, University of Erlangen-Nürnberg, Martensstraße 7, 91058 Erlangen, Germany.
authors.forename: Atefeh Y
authors.initials: AY
authors.lastname: Amin
authors.forename: Artoem
authors.initials: A
authors.lastname: Khassanov
authors.forename: Knud
authors.initials: K
authors.lastname: Reuter
authors.forename: Timo
authors.initials: T
authors.lastname: Meyer-Friedrichsen
authors.forename: Marcus
authors.initials: M
authors.lastname: Halik