title: Preferentially grown ultranano c-diamond and n-diamond grains on silicon nanoneedles from energetic species with enhanced field-emission properties.
abstract: The design and fabrication of well-defined nanostructures have great importance in nanoelectronics. Here we report the precise growth of sub-2 nm (c-diamond) and above 5 nm (n-diamond) size diamond grains from energetic species (chemical vapor deposition process) at low growth temperature of about 460 °C. We demonstrate that a pre-nucleation induced interface can be accounted for the growth of c-diamond or n-diamond grains on Si-nanoneedles (Si-NN). These preferentially grown allotropic forms of diamond on Si-NN have shown high electron field-emission properties and signify their high potential towards diamond-based electronic applications.
authors.affiliation: Department of Physics, Tamkang University, Tamsui, Taiwan 251, ROC. peetijoseph@gmail.com
authors.forename: Joseph P
authors.initials: JP
authors.lastname: Thomas
authors.forename: Huang-Chin
authors.initials: HC
authors.lastname: Chen
authors.forename: Shih-Hao
authors.initials: SH
authors.lastname: Tseng
authors.forename: Hung-Chi
authors.initials: HC
authors.lastname: Wu
authors.forename: Chi-Young
authors.initials: CY
authors.lastname: Lee
authors.forename: Hsiu Fung
authors.initials: HF
authors.lastname: Cheng
authors.forename: Nyan-Hwa
authors.initials: NH
authors.lastname: Tai
authors.forename: I-Nan
authors.initials: IN
authors.lastname: Lin