title: A physics/circuit-based switching model for carbon-based resistive memory with sp2/sp3 cluster conversion.
abstract: The switching mechanism in carbon-based resistive-switching random access memory is modelled using a percolation approach built on the low-temperature transition between phases sp(3) (diamond-like and high-resistive state) and sp(2) (graphite-like and low-resistive state) for a matrix of carbon clusters in a diamond-like carbon film. The switching process is described using a random circuit breaker network with each breaker controlled by the resistance of clusters sp(2)/sp(3). The key feature of the proposed model is the thermal stress-induced transition from sp(2) to sp(3) phase and the electric field-induced transition from sp(3) to sp(2) phase. Compared with experiments on the switching biasing scheme, a good agreement between simulation and measured data validated the accuracy of the proposed model.
authors.affiliation: Institute of Microelectronics, Tsinghua University, Beijing 100084, China.
authors.forename: Shengjun
authors.initials: S
authors.lastname: Qin
authors.forename: Jinyu
authors.initials: J
authors.lastname: Zhang
authors.forename: Di
authors.initials: D
authors.lastname: Fu
authors.forename: Dan
authors.initials: D
authors.lastname: Xie
authors.forename: Yan
authors.initials: Y
authors.lastname: Wang
authors.forename: He
authors.initials: H
authors.lastname: Qian
authors.forename: Litian
authors.initials: L
authors.lastname: Liu
authors.forename: Zhiping
authors.initials: Z
authors.lastname: Yu