title: Thickness-independent transport channels in topological insulator Bi(2)Se(3) thin films.
abstract: With high quality topological insulator Bi(2)Se(3) thin films, we report thickness-independent transport properties over wide thickness ranges. Conductance remained nominally constant as the sample thickness changed from 256 to ∼8  QL (where QL refers to quintuple layer, 1  QL≈1  nm). Two surface channels of very different behaviors were identified. The sheet carrier density of one channel remained constant at ∼3.0×10(13)  cm(-2) down to 2 QL, while the other, which exhibited quantum oscillations, remained constant at ∼8×10(12)  cm(-2) only down to ∼8  QL. The weak antilocalization parameters also exhibited similar thickness independence. These two channels are most consistent with the topological surface states and the surface accumulation layers, respectively.
authors.affiliation: Department of Electrical and Computer Engineering, Rutgers, The State University of New Jersey, 94 Brett Road, Piscataway, New Jersey 08854, USA.
authors.forename: Namrata
authors.initials: N
authors.lastname: Bansal
authors.forename: Yong Seung
authors.initials: YS
authors.lastname: Kim
authors.forename: Matthew
authors.initials: M
authors.lastname: Brahlek
authors.forename: Eliav
authors.initials: E
authors.lastname: Edrey
authors.forename: Seongshik
authors.initials: S
authors.lastname: Oh