title: Indirectly pumped 3.7 THz InGaAs/InAlAs quantum-cascade lasers grown by metal-organic vapor-phase epitaxy.
abstract: Device-performances of 3.7 THz indirect-pumping quantum-cascade lasers are demonstrated in an InGaAs/InAlAs material system grown by metal-organic vapor-phase epitaxy. The lasers show a low threshold-current-density of ~420 A/cm2 and a peak output power of ~8 mW at 7 K, no sign of parasitic currents with recourse to well-designed coupled-well injectors in the indirect pump scheme, and a maximum operating temperature of Tmax ~100 K. The observed roll-over of output intensities in current ranges below maximum currents and limitation of Tmax are discussed with a model for electron-gas heating in injectors. Possible ways toward elevation of Tmax are suggested.
authors.affiliation: Central Research Laboratories, Hamamatsu Photonics K.K. Hamakitaku, Hamamatsu, 434-8601, Japan.
authors.forename: Kazuue
authors.initials: K
authors.lastname: Fujita
authors.forename: Masamichi
authors.initials: M
authors.lastname: Yamanishi
authors.forename: Shinichi
authors.initials: S
authors.lastname: Furuta
authors.forename: Kazunori
authors.initials: K
authors.lastname: Tanaka
authors.forename: Tadataka
authors.initials: T
authors.lastname: Edamura
authors.forename: Tillmann
authors.initials: T
authors.lastname: Kubis
authors.forename: Gerhard
authors.initials: G
authors.lastname: Klimeck
mesh_terms: D000535:Aluminum / Q000737:chemistry; D001152:Arsenicals / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D053844:Lasers, Solid-State; D044367:Phase Transition; D058626:Plasma Gases / Q000737:chemistry
chemical_list: D001152:Arsenicals; D058626:Plasma Gases; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; D000535:Aluminum; C076773:indium arsenide