title: a-SiOx<Er> active photonic crystal resonator membrane fabricated by focused Ga+ ion beam.
abstract: We have fabricated thin erbium-doped amorphous silicon sub-oxide (a-SiOx<Er>) photonic crystal membrane using focused gallium ion beam (FIB). The photonic crystal is composed of a hexagonal lattice with a H1 defect supporting two quasi-doubly degenerate second order dipole states. 2-D simulation was used for the design of the structure and full 3-D FDTD (Finite-Difference Time-Domain) numerical simulations were performed for a complete analysis of the structure. The simulation predicted a quality factor for the structure of Q = 350 with a spontaneous emission enhancement of 7. Micro photoluminescence measurements showed an integrated emission intensity enhancement of ~2 times with a Q = 130. We show that the discrepancy between simulation and measurement is due to the conical shape of the photonic crystal holes and the optical losses induced by FIB milling.
authors.affiliation: Applied Physics Department, Gleb Wataghin Physics Institute, University of Campinas-UNICAMP, Campinas, SP, Brazil.
authors.forename: David S L
authors.initials: DS
authors.lastname: Figueira
authors.forename: Luis A M
authors.initials: LA
authors.lastname: Barea
authors.forename: Felipe
authors.initials: F
authors.lastname: Vallini
authors.forename: Paulo F
authors.initials: PF
authors.lastname: Jarschel
authors.forename: Rossano
authors.initials: R
authors.lastname: Lang
authors.forename: Newton C
authors.initials: NC
authors.lastname: Frateschi
mesh_terms: D003460:Crystallization; D005708:Gallium; D020450:Heavy Ions; D008422:Materials Testing; D008567:Membranes, Artificial; D012822:Silicon Dioxide / Q000737:chemistry*; D014159:Transducers
chemical_list: D008567:Membranes, Artificial; D012822:Silicon Dioxide; D005708:Gallium