title: Scalable synthesis and device integration of self-registered one-dimensional zinc oxide nanostructures and related materials.
abstract: On integrating one-dimensional (1D) nanocrystals (nanowires) to useful devices, in this review article, we provide a background on vapor-based growth processes and how they impact device integration strategies. Successful integration of nanowires to devices and their scalability simply rely on where and how nanowires are formed, how they are interfaced to other device components and how they function. In this direction, we will provide a discussion on developed growth strategies for lateral and standing growth of semiconductor nanostructures and assess their success in addressing current challenges of nanotechnology such as mass integration of nanowires, and the necessary accuracy in their positioning and alignment. In this regard, we highlight some of our recent work on formation of two-dimensional (2D)- and three-dimensional (3D)- nanowire and nanowall arrays and provide an overview of their structural and electro-optical properties. This will be followed by discussing potential applications of such hierarchical assemblies in light generation, photocatalysis and conversion of motion to electricity.
authors.affiliation: Surface and Microanalysis Science Division, 100 Bureau Dr Stop 8372, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA. babakn@nist.gov
authors.forename: Babak
authors.initials: B
authors.lastname: Nikoobakht
authors.forename: Xudong
authors.initials: X
authors.lastname: Wang
authors.forename: Andrew
authors.initials: A
authors.lastname: Herzing
authors.forename: Jian
authors.initials: J
authors.lastname: Shi