title: High-speed receiver based on waveguide germanium photodetector wire-bonded to 90nm SOI CMOS amplifier.
abstract: The performance of a receiver based on a CMOS amplifier circuit designed with 90nm ground rules wire-bonded to a waveguide germanium photodetector is characterized at data rates up to 40Gbps. Both chips were fabricated through the IBM Silicon CMOS Integrated Nanophotonics process on specialty photonics-enabled SOI wafers. At the data rate of 28Gbps which is relevant to the new generation of optical interconnects, a sensitivity of -7.3dBm average optical power is demonstrated with 3.4pJ/bit power-efficiency and 0.6UI horizontal eye opening at a bit-error-rate of 10(-12). The receiver operates error-free (bit-error-rate < 10(-12)) up to 40Gbps with optimized power supply settings demonstrating an energy efficiency of 1.4pJ/bit and 4pJ/bit at data rates of 32Gbps and 40Gbps, respectively, with an average optical power of -0.8dBm.
authors.affiliation: IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598, USA. hpan@us.ibm.com
authors.forename: Huapu
authors.initials: H
authors.lastname: Pan
authors.forename: Solomon
authors.initials: S
authors.lastname: Assefa
authors.forename: William M J
authors.initials: WM
authors.lastname: Green
authors.forename: Daniel M
authors.initials: DM
authors.lastname: Kuchta
authors.forename: Clint L
authors.initials: CL
authors.lastname: Schow
authors.forename: Alexander V
authors.initials: AV
authors.lastname: Rylyakov
authors.forename: Benjamin G
authors.initials: BG
authors.lastname: Lee
authors.forename: Christian W
authors.initials: CW
authors.lastname: Baks
authors.forename: Steven M
authors.initials: SM
authors.lastname: Shank
authors.forename: Yurii A
authors.initials: YA
authors.lastname: Vlasov