title: Nanowire dimensions effect on ON/OFF current ratio and sub-threshold slope in silicon nanowire transistors.
abstract: This paper shows the effect of the dimensions of nanowires on threshold voltage, ON/OFF current ratio, and sub-threshold slope. These parameters are critical factors of the characteristics of silicon nanowire transistors. The MuGFET simulation tool was used to investigate the characteristics of a transistor. Current-voltage characteristics with different dimensions were simulated. Results show that long nanowires with low diameter and oxide thickness tend to have the best transistor characteristics.
authors.affiliation: Collaborative Microelectronic Design Excellence Centre (CEDEC), Engineering Campus, University Science, Malaysia 14300, Nibong Tebal, Penang, Malaysia.
authors.forename: Yasir
authors.initials: Y
authors.lastname: Hashim
authors.forename: Othman
authors.initials: O
authors.lastname: Sidek