title: Vulnerability of CMOS image sensors in Megajoule Class Laser harsh environment.
abstract: CMOS image sensors (CIS) are promising candidates as part of optical imagers for the plasma diagnostics devoted to the study of fusion by inertial confinement. However, the harsh radiative environment of Megajoule Class Lasers threatens the performances of these optical sensors. In this paper, the vulnerability of CIS to the transient and mixed pulsed radiation environment associated with such facilities is investigated during an experiment at the OMEGA facility at the Laboratory for Laser Energetics (LLE), Rochester, NY, USA. The transient and permanent effects of the 14 MeV neutron pulse on CIS are presented. The behavior of the tested CIS shows that active pixel sensors (APS) exhibit a better hardness to this harsh environment than a CCD. A first order extrapolation of the reported results to the higher level of radiation expected for Megajoule Class Laser facilities (Laser Megajoule in France or National Ignition Facility in the USA) shows that temporarily saturated pixels due to transient neutron-induced single event effects will be the major issue for the development of radiation-tolerant plasma diagnostic instruments whereas the permanent degradation of the CIS related to displacement damage or total ionizing dose effects could be reduced by applying well known mitigation techniques.
authors.affiliation: ISAE, Université de Toulouse, 10 ave. E. Belin, 31055 Toulouse, France. vincent.goiffon@isae.fr
authors.forename: V
authors.initials: V
authors.lastname: Goiffon
authors.forename: S
authors.initials: S
authors.lastname: Girard
authors.forename: A
authors.initials: A
authors.lastname: Chabane
authors.forename: P
authors.initials: P
authors.lastname: Paillet
authors.forename: P
authors.initials: P
authors.lastname: Magnan
authors.forename: P
authors.initials: P
authors.lastname: Cervantes
authors.forename: P
authors.initials: P
authors.lastname: Martin-Gonthier
authors.forename: J
authors.initials: J
authors.lastname: Baggio
authors.forename: M
authors.initials: M
authors.lastname: Estribeau
authors.forename: J-L
authors.initials: JL
authors.lastname: Bourgade
authors.forename: S
authors.initials: S
authors.lastname: Darbon
authors.forename: A
authors.initials: A
authors.lastname: Rousseau
authors.forename: V Yu
authors.initials: VY
authors.lastname: Glebov
authors.forename: G
authors.initials: G
authors.lastname: Pien
authors.forename: T C
authors.initials: TC
authors.lastname: Sangster
mesh_terms: D004867:Equipment Design; D004868:Equipment Failure; D019544:Equipment Failure Analysis; D007089:Image Enhancement / Q000295:instrumentation*; D007090:Image Interpretation, Computer-Assisted / Q000295:instrumentation*; D007834:Lasers; D015203:Reproducibility of Results; D012666:Semiconductors; D012680:Sensitivity and Specificity; D014159:Transducers