title: Photophysics of single silicon vacancy centers in diamond: implications for single photon emission.
abstract: Single silicon vacancy (SiV) color centers in diamond have recently shown the ability for high brightness, narrow bandwidth, room temperature single photon emission. This work develops a model describing the three level population dynamics of single SiV centers in diamond nanocrystals on iridium surfaces including an intensity dependent de-shelving process. Furthermore, we investigate the brightness and photostability of single centers and find maximum single photon rates of 6.2 Mcps under continuous excitation. We investigate the collection efficiency of the fluorescence and estimate quantum efficiencies of the SiV centers.
authors.affiliation: Universität des Saarlandes, Fachrichtung 7.2 (Experimentalphysik), 66123 Saarbrücken, Germany.
authors.forename: Elke
authors.initials: E
authors.lastname: Neu
authors.forename: Mario
authors.initials: M
authors.lastname: Agio
authors.forename: Christoph
authors.initials: C
authors.lastname: Becher
mesh_terms: D003198:Computer Simulation; D018130:Diamond / Q000737:chemistry*; D008027:Light; D008956:Models, Chemical; D017785:Photons; D012542:Scattering, Radiation; D012825:Silicon / Q000737:chemistry*
chemical_list: D018130:Diamond; D012825:Silicon