title: High speed GeSi electro-absorption modulator at 1550 nm wavelength on SOI waveguide.
abstract: We demonstrate a high speed GeSi electro-absorption (EA) modulator monolithically integrated on 3 µm silicon-on-insulator (SOI) waveguide. The demonstrated device has a compact active region of 1.0 × 55 μm(2), an insertion loss of 5 dB and an extinction ratio of 6 dB at wavelength of 1550 nm. The modulator has a broad operating wavelength range of 35 nm and a 3 dB bandwidth of 40.7 GHz at 2.8 V reverse bias. This compact and energy efficient modulator is a key building block for optical interconnection applications.
authors.affiliation: Kotura Inc, 2630 Corporate Place, Monterey Park, CA 91754, USA. dfeng@kotura.com
authors.forename: Dazeng
authors.initials: D
authors.lastname: Feng
authors.forename: Shirong
authors.initials: S
authors.lastname: Liao
authors.forename: Hong
authors.initials: H
authors.lastname: Liang
authors.forename: Joan
authors.initials: J
authors.lastname: Fong
authors.forename: Bhavin
authors.initials: B
authors.lastname: Bijlani
authors.forename: Roshanak
authors.initials: R
authors.lastname: Shafiiha
authors.forename: B Jonathan
authors.initials: BJ
authors.lastname: Luff
authors.forename: Ying
authors.initials: Y
authors.lastname: Luo
authors.forename: Jack
authors.initials: J
authors.lastname: Cunningham
authors.forename: Ashok V
authors.initials: AV
authors.lastname: Krishnamoorthy
authors.forename: Mehdi
authors.initials: M
authors.lastname: Asghari
mesh_terms: D000042:Absorption; D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005857:Germanium / Q000737:chemistry*; D008027:Light; D055096:Optical Devices; D012542:Scattering, Radiation; D012825:Silicon / Q000737:chemistry*; D013685:Telecommunications / Q000295:instrumentation*
chemical_list: D005857:Germanium; D012825:Silicon