title: Kinetic control of catalytic CVD for high-quality graphene at low temperatures.
abstract: Low-temperature (∼600 °C), scalable chemical vapor deposition of high-quality, uniform monolayer graphene is demonstrated with a mapped Raman 2D/G ratio of >3.2, D/G ratio ≤0.08, and carrier mobilities of ≥3000 cm(2) V(-1) s(-1) on SiO(2) support. A kinetic growth model for graphene CVD based on flux balances is established, which is well supported by a systematic study of Ni-based polycrystalline catalysts. A finite carbon solubility of the catalyst is thereby a key advantage, as it allows the catalyst bulk to act as a mediating carbon sink while optimized graphene growth occurs by only locally saturating the catalyst surface with carbon. This also enables a route to the controlled formation of Bernal stacked bi- and few-layered graphene. The model is relevant to all catalyst materials and can readily serve as a general process rationale for optimized graphene CVD.
authors.affiliation: Department of Engineering, University of Cambridge , Cambridge CB3 0FA, UK.
authors.forename: Robert S
authors.initials: RS
authors.lastname: Weatherup
authors.forename: Bruno
authors.initials: B
authors.lastname: Dlubak
authors.forename: Stephan
authors.initials: S
authors.lastname: Hofmann
mesh_terms: D002384:Catalysis; D003460:Crystallization / Q000379:methods*; D005740:Gases / Q000737:chemistry; D006108:Graphite / Q000138:chemical synthesis*; D007700:Kinetics; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D013499:Surface Properties; D013696:Temperature
chemical_list: D005740:Gases; D046911:Macromolecular Substances; D006108:Graphite