title: Photoluminescence and photoresponse from InSb/InAs-based quantum dot structures.
abstract: InSb-based quantum dots grown by metal-organic vapor-phase epitaxy (MOVPE) on InAs substrates are studied for use as the active material in interband photon detectors. Long-wavelength infrared (LWIR) photoluminescence is demonstrated with peak emission at 8.5 µm and photoresponse, interpreted to originate from type-II interband transitions in a p-i-n photodiode, was measured up to 6 µm, both at 80 K. The possibilities and benefits of operation in the LWIR range (8-12 µm) are discussed and the results suggest that InSb-based quantum dot structures can be suitable candidates for photon detection in the LWIR regime.
authors.affiliation: KTH Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden. ogus@kth.se
authors.forename: Oscar
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authors.lastname: Gustafsson
authors.forename: Amir
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authors.lastname: Berggren
authors.forename: Qin
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authors.lastname: Wang
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authors.lastname: Soldemo
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authors.lastname: Weissenrieder
authors.forename: Sirpa
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authors.lastname: Persson
authors.forename: Susanne
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authors.lastname: Almqvist
authors.forename: Ulf
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authors.lastname: Ekenberg
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authors.lastname: Noharet
authors.forename: Carl
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authors.lastname: Asplund
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authors.lastname: Göthelid
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authors.forename: Mattias
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authors.lastname: Hammar