title: Controlled charge transport by polymer blend dielectrics in top-gate organic field-effect transistors for low-voltage-operating complementary circuits.
abstract: We report here the development of high-performance p- and n-channel organic field-effect transistors (OFETs) and complementary circuits using inkjet-printed semiconducting layers and high-k polymer dielectric blends of poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) and poly(methyl methacrylate) (PMMA). Inkjet-printed p-type polymer semiconductors containing alkyl-substituted thienylenevinylene (TV) and dodecylthiophene (PC12TV12T) and n-type poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-dithiophene)} (P(NDI2OD-T2)) OFETs typically show high field-effect mobilities (μ(FET)) of 0.2-0.5 cm²/(V s), and their operation voltage is effectively reduced to below 5 V by the use of P(VDF-TrFE):PMMA blends. The main interesting result is that the OFET characteristics could be tuned by controlling the mixing ratio of P(VDF-TrFE) to PMMA in the blended dielectric. The μ(FET) of the PC12TV12T OFETs gradually improves, whereas the P(NDI2OD-T2) OFET properties become slightly worse as the P(VDF-TrFE) content increases. When the mixing ratio is optimized, well-balanced hole and electron mobilities of more than 0.2 cm²/(V s) and threshold voltages below ±3 V are obtained at a 7:3 ratio of P(VDF-TrFE) to PMMA. Low-voltage-operated (∼2 V) printed complementary inverters are successfully demonstrated using the blended dielectric and exhibit an ideal inverting voltage of nearly half of the supplied bias, high voltage gains of greater than 25, and excellent noise margins of more than 75% of the ideal values.
authors.affiliation: Department of Chemical & Biological Engineering, Hanbat National University 16-1, Dukmyung-dong, Yuseong-gu, Daejeon 305-719, Republic of Korea.
authors.forename: Kang-Jun
authors.initials: KJ
authors.lastname: Baeg
authors.forename: Dongyoon
authors.initials: D
authors.lastname: Khim
authors.forename: Juhwan
authors.initials: J
authors.lastname: Kim
authors.forename: Hyun
authors.initials: H
authors.lastname: Han
authors.forename: Soon-Won
authors.initials: SW
authors.lastname: Jung
authors.forename: Tae-Wook
authors.initials: TW
authors.lastname: Kim
authors.forename: Minji
authors.initials: M
authors.lastname: Kang
authors.forename: Antonio
authors.initials: A
authors.lastname: Facchetti
authors.forename: Sung-Kyu
authors.initials: SK
authors.lastname: Hong
authors.forename: Dong-Yu
authors.initials: DY
authors.lastname: Kim
authors.forename: Yong-Young
authors.initials: YY
authors.lastname: Noh
mesh_terms: D016287:Computer Peripherals; D017097:Electric Impedance; D004579:Electron Transport; D004867:Equipment Design; D019544:Equipment Failure Analysis; D009930:Organic Chemicals / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D009930:Organic Chemicals