title: A novel synthesis of a CuInSe2 thin film from electrodeposited Cu-Se-In-Se precursors with three steps annealing.
abstract: In this study, copper indium diselenide (CIS) films were synthesized from electrodeposited Cu-Se-In-Se precursors by three step annealing. The Se layer between Cu and In layer was grown to prevent the formation of Cu/In compound. The Cu-Se precursors were first annealed to grow uniform and conductive Cu2Se surface. After deposition of the four layers precursors, two steps annealing was employed to form Cu2Se-In2Se3 precursors. Transforming Cu2Se-In2Se3 to CIS required less thermal energy. Therefore, high quality CIS film can be synthesized by two steps annealing due to its high crystallinity. The properties of the CIS films were characterized by scanning electron microscopy (SEM), X-ray Diffraction (XRD), and Raman Spectra.
authors.affiliation: Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC.
authors.forename: Shao-Yu
authors.initials: SY
authors.lastname: Hu
authors.forename: Wen-Hsi
authors.initials: WH
authors.lastname: Lee
authors.forename: Shih-Chieh
authors.initials: SC
authors.lastname: Chang
authors.forename: Ying-Lang
authors.initials: YL
authors.lastname: Wang