title: High-brightness 1.3 μm InAs/GaAs quantum dot tapered laser with high temperature stability.
abstract: We demonstrate high-brightness 1.3 μm tapered lasers with high temperature stability by using p-doped InAs/GaAs quantum dots (QDs) as the active region. It is found that the beam quality factor M(2) for the devices is almost unchanged as the light power and temperature increase. The almost constant M(2) results from the p-doped QD active region.
authors.affiliation: Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
authors.forename: Yulian
authors.initials: Y
authors.lastname: Cao
authors.forename: Haiming
authors.initials: H
authors.lastname: Ji
authors.forename: Pengfei
authors.initials: P
authors.lastname: Xu
authors.forename: Yongxian
authors.initials: Y
authors.lastname: Gu
authors.forename: Wenquan
authors.initials: W
authors.lastname: Ma
authors.forename: Tao
authors.initials: T
authors.lastname: Yang
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D007834:Lasers; D045663:Quantum Dots; D013696:Temperature
chemical_list: D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide