title: Sputtered ZnO-SiO2 nanocomposite light-emitting diodes with flat-top nanosecond laser treatment.
abstract: Sputtered ZnO-SiO2 nanocomposite light-emitting diodes (LEDs) were treated using a flat-top nanosecond laser (FTNL) under room temperature. The intensity of the 376 nm electroluminescence (EL) emission of ZnO-SiO2 nanocomposite LEDs at a current of 9 mA with FTNL treatment was approximately 1.4 times greater than LEDs without FTNL treatment. Furthermore, the FTNL-treated LEDs indicated a narrower full width at half maximum of the 376 nm EL emission than those of LEDs without FTNL treatment. Thus, FTNL treatment of ZnO-SiO2 nanocomposite LEDs could induce the recrystallization of distributed ZnO nanoclusters and reduce the defects in ZnO-SiO2 nanocomposite layers.
authors.affiliation: Institute of Electro-Optical Science and Engineering, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan City 70101, Taiwan.
authors.forename: Jiun-Ting
authors.initials: JT
authors.lastname: Chen
authors.forename: Wei-Chih
authors.initials: WC
authors.lastname: Lai
authors.forename: Chi-Heng
authors.initials: CH
authors.lastname: Chen
authors.forename: Ya-Yu
authors.initials: YY
authors.lastname: Yang
authors.forename: Jinn-Kong
authors.initials: JK
authors.lastname: Sheu
authors.forename: Kun-Wei
authors.initials: KW
authors.lastname: Lin
authors.forename: Li-Wen
authors.initials: LW
authors.lastname: Lai
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D006358:Hot Temperature; D007834:Lasers; D008029:Lighting / Q000295:instrumentation*; D049329:Nanostructures / Q000737:chemistry* / Q000528:radiation effects; D036103:Nanotechnology / Q000295:instrumentation*; D012666:Semiconductors