title: Quantum-confined Stark effect at 1.3 μm in Ge/Si(0.35)Ge(0.65) quantum-well structure.
abstract: Room-temperature quantum-confined Stark effect in a Ge/SiGe quantum-well structure is reported at the wavelength of 1.3 μm. The operating wavelength is tuned by the use of strain engineering. Low-energy plasma-enhanced chemical vapor deposition is used to grow 20 periods of strain-compensated quantum wells (8 nm Ge well and 12 nm Si(0.35)Ge(0.65) barrier) on Si(0.21)Ge(0.79) virtual substrate. The fraction of light absorbed per well allows for a strong modulation around 1.3 μm. The half-width at half-maximum of the excitonic peak of only 12 meV allows for a discussion on physical mechanisms limiting the performances of such devices.
authors.affiliation: Institut d’Electronique Fondamentale, University Paris-Sud, CNRS UMR 8622, Bât. 220, 91405 Orsay Cedex, France.
authors.forename: Mohamed Said
authors.initials: MS
authors.lastname: Rouifed
authors.forename: Papichaya
authors.initials: P
authors.lastname: Chaisakul
authors.forename: Delphine
authors.initials: D
authors.lastname: Marris-Morini
authors.forename: Jacopo
authors.initials: J
authors.lastname: Frigerio
authors.forename: Giovanni
authors.initials: G
authors.lastname: Isella
authors.forename: Daniel
authors.initials: D
authors.lastname: Chrastina
authors.forename: Samson
authors.initials: S
authors.lastname: Edmond
authors.forename: Xavier
authors.initials: X
authors.lastname: Le Roux
authors.forename: Jean-René
authors.initials: JR
authors.lastname: Coudevylle
authors.forename: Laurent
authors.initials: L
authors.lastname: Vivien