title: Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy.
abstract: A sample of the β-Ga2O3/wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the β-Ga2O3 layer was formed epitaxially on GaN. The valence band offset of the β-Ga2O3/wurtzite GaN heterostructure is measured by X-ray photoelectron spectroscopy. It is demonstrated that the valence band of the β-Ga2O3/GaN structure is 1.40 ± 0.08 eV.
authors.affiliation: State Key Laboratory of Artificial Microstructure and Microscopic Physics, School of Physics, Peking University, Beijing, 100871, People's Republic of China. zxqin@pku.edu.cn.
authors.forename: Wei
authors.initials: W
authors.lastname: Wei
authors.forename: Zhixin
authors.initials: Z
authors.lastname: Qin
authors.forename: Shunfei
authors.initials: S
authors.lastname: Fan
authors.forename: Zhiwei
authors.initials: Z
authors.lastname: Li
authors.forename: Kai
authors.initials: K
authors.lastname: Shi
authors.forename: Qinsheng
authors.initials: Q
authors.lastname: Zhu
authors.forename: Guoyi
authors.initials: G
authors.lastname: Zhang