title: Femtosecond laser-induced crystallization of amorphous Ga-Sb-Se films and coherent phonon dynamics.
abstract: Femtosecond laser-irradiation-induced phase change of new environment friendly Te-free amorphous Ga-Sb-Se films is studied by coherent phonon spectroscopy. New coherent optical phonons (COP) occur when laser irradiation power reaches some threshold, implying laser-induced phase change taken place. Pump power dependence of COP dynamics reveals the phase change as crystallization and crystallization quality is comparable to one of annealing crystallization, showing application potential of Ga-Sb-Se films in optical phase change memory. The laser-irradiated crystallization of different component Ga-Sb-Se films is studied. It is found crystallization threshold power depends on Sb content, implying Sb-content control of the crystallization temperature of Ga-Sb-Se films.
authors.affiliation: Department of Physics, School of Science, Guangdong University of Petrochemical Technology, Maoming, Guangdong 525000, China.
authors.forename: Weiling
authors.initials: W
authors.lastname: Zhu
authors.forename: Yegang
authors.initials: Y
authors.lastname: Lu
authors.forename: Simian
authors.initials: S
authors.lastname: Li
authors.forename: Zhitang
authors.initials: Z
authors.lastname: Song
authors.forename: Tianshu
authors.initials: T
authors.lastname: Lai
mesh_terms: D003460:Crystallization / Q000379:methods*; D007834:Lasers; D008422:Materials Testing; D053768:Metal Nanoparticles / Q000737:chemistry* / Q000528:radiation effects*; D017785:Photons; D013499:Surface Properties / Q000528:radiation effects