title: A multilevel memory based on proton-doped polyazomethine with an excellent uniformity in resistive switching.
abstract: The uniformity of operating parameters in organic nonvolatile memory devices is very important to avoid false programming and error readout problems. In the present work, we fabricated an organic resistive-switching memory based on protonic-acid-doped polyazomethine (PA-TsOH), which demonstrates an excellent operative uniformity and multilevel storage capability. The deliberate tuning of the resistance states can be attributed to the electric-field-controlled molecular doping of the imine-containing polymers.
authors.affiliation: Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
authors.forename: Benlin
authors.initials: B
authors.lastname: Hu
authors.forename: Xiaojian
authors.initials: X
authors.lastname: Zhu
authors.forename: Xinxin
authors.initials: X
authors.lastname: Chen
authors.forename: Liang
authors.initials: L
authors.lastname: Pan
authors.forename: Shanshan
authors.initials: S
authors.lastname: Peng
authors.forename: Yuanzhao
authors.initials: Y
authors.lastname: Wu
authors.forename: Jie
authors.initials: J
authors.lastname: Shang
authors.forename: Gang
authors.initials: G
authors.lastname: Liu
authors.forename: Qing
authors.initials: Q
authors.lastname: Yan
authors.forename: Run-Wei
authors.initials: RW
authors.lastname: Li
mesh_terms: D001391:Azo Compounds / Q000138:chemical synthesis / Q000737:chemistry*; D016248:Computer Storage Devices; D011108:Polymers / Q000138:chemical synthesis / Q000737:chemistry*; D011522:Protons; D013882:Thiosemicarbazones / Q000138:chemical synthesis / Q000737:chemistry*
chemical_list: D001391:Azo Compounds; D011108:Polymers; D011522:Protons; D013882:Thiosemicarbazones; C512188:azomethine