title: Single-mode GaN nanowire lasers.
abstract: We demonstrate stable, single-frequency output from single, as-fabricated GaN nanowire lasers operating far above lasing threshold. Each laser is a linear, double-facet GaN nanowire functioning as gain medium and optical resonator, fabricated by a top-down technique that exploits a tunable dry etch plus anisotropic wet etch for precise control of the nanowire dimensions and high material gain. A single-mode linewidth of ~0.12 nm and >18 dB side-mode suppression ratio are measured. Numerical simulations indicate that single-mode lasing arises from strong mode competition and narrow gain bandwidth.
authors.affiliation: Sandia National Laboratories, Albuquerque, New Mexico 87185-1086, USA.
authors.forename: Qiming
authors.initials: Q
authors.lastname: Li
authors.forename: Jeremy B
authors.initials: JB
authors.lastname: Wright
authors.forename: Weng W
authors.initials: WW
authors.lastname: Chow
authors.forename: Ting Shan
authors.initials: TS
authors.lastname: Luk
authors.forename: Igal
authors.initials: I
authors.lastname: Brener
authors.forename: Luke F
authors.initials: LF
authors.lastname: Lester
authors.forename: George T
authors.initials: GT
authors.lastname: Wang