title: Plasma-assisted atomic layer deposition of Al(2)O(3) and parylene C bi-layer encapsulation for chronic implantable electronics.
abstract: Encapsulation of biomedical implants with complex three dimensional geometries is one of the greatest challenges achieving long-term functionality and stability. This report presents an encapsulation scheme that combines Al(2)O(3) by atomic layer deposition with parylene C for implantable electronic systems. The Al(2)O(3)-parylene C bi-layer was used to encapsulate interdigitated electrodes, which were tested invitro by soak testing in phosphate buffered saline solution at body temperature (37 °C) and elevated temperatures (57 °C and 67 °C) for accelerated lifetime testing up to 5 months. Leakage current and electrochemical impedance spectroscopy were measured for evaluating the integrity and insulation performance of the coating. Leakage current was stably about 15 pA at 5 V dc, and impedance was constantly about 3.5 MΩ at 1 kHz by using electrochemical impedance spectroscopy for samples under 67 °C about 5 months (approximately equivalent to 40 months at 37 °C). Alumina and parylene coating lasted at least 3 times longer than parylene coated samples tested at 80 °C. The excellent insulation performance of the encapsulation shows its potential usefulness for chronic implants.
authors.affiliation: Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112, USA.
authors.forename: Xianzong
authors.initials: X
authors.lastname: Xie
authors.forename: Loren
authors.initials: L
authors.lastname: Rieth
authors.forename: Srinivas
authors.initials: S
authors.lastname: Merugu
authors.forename: Prashant
authors.initials: P
authors.lastname: Tathireddy
authors.forename: Florian
authors.initials: F
authors.lastname: Solzbacher