title: Observation of intermediate template directed SiC nanowire growth in Si-C-N systems.
abstract: SiC nanowires (NWs) are commonly prepared in a Si-C-N system, but its formation mechanism is not fully understood. High resolution transmission electron microscopy and electron energy loss spectroscopy observation recorded the growth process of how Si(3)N(4) NWs were transformed into SiC NWs, and demonstrated the validity of an intermediate template directed SiC NW growth via carbothermal reduction of intermediate Si(3)N(4) NWs in a Si-C-N system. Based on this discovery, an intermediate-template growth mechanism of SiC NWs was proposed.
authors.affiliation: Institute of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, 30 Xueyuan Road, Haidian District, Beijing, People's Republic of China.
authors.forename: Min
authors.initials: M
authors.lastname: Xia
authors.forename: Shize
authors.initials: S
authors.lastname: Yang
authors.forename: Hongyan
authors.initials: H
authors.lastname: Guo
authors.forename: Wei
authors.initials: W
authors.lastname: Hao
authors.forename: Qingzhi
authors.initials: Q
authors.lastname: Yan
authors.forename: Changchun
authors.initials: C
authors.lastname: Ge