title: Power scaling of a directly diode-laser-pumped Ti:sapphire laser.
abstract: Improvements in the output power of a directly GaN diode-laser-pumped Ti:Al2O3 laser are achieved by using double-sided pumping. In continuous wave operation, an output power of 159 mW is reported. A tuning range of over 125 nm with output powers in excess of 100 mW is achieved. Pulses of 111 fs duration and an average power of 101 mW are demonstrated by mode locking the laser with a saturable Bragg reflector. Pumping with GaN diode lasers at wavelengths around 450 nm induces an additional parasitic crystal loss of about 1% per resonator roundtrip that is not observed at the conventional green pump wavelengths.
authors.affiliation: Institute of Photonics, SUPA, University of Strathclyde, Glasgow, G4 0NW, Scotland, UK. peter.roth@strath.ac.uk
authors.forename: Peter W
authors.initials: PW
authors.lastname: Roth
authors.forename: David
authors.initials: D
authors.lastname: Burns
authors.forename: Alan J
authors.initials: AJ
authors.lastname: Kemp
mesh_terms: D000537:Aluminum Oxide / Q000737:chemistry*; D004735:Energy Transfer; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D053844:Lasers, Solid-State; D012031:Refractometry / Q000295:instrumentation*; D014025:Titanium / Q000737:chemistry*
chemical_list: C473348:gallium nitride; D005708:Gallium; D014025:Titanium; D000537:Aluminum Oxide