title: Enhancement of ultraviolet detecting by coupling the photoconductive behavior of GaN nanowires and p-n junction.
abstract: The giant improvement of ultraviolet response behavior of a conventional GaN p-n film structured detector by the incorporation of slanted GaN nanowires is reported. The GaN nanowires/p-n film structure shows great photoresponse performance, exhibiting a short response time <0.1 s and a high sensitivity, being stable and reproducible with an on/off current contrast ratio as high as 1800 at zero bias under 365 nm ultraviolet light irradiation. Via carefully analyzing the experiment result and the band diagram of the device, the enhancement can be predominantly attributed to the photogenerated electrons in the slanted GaN nanowires.
authors.affiliation: Wuhan National Laboratory for Optoelectronics (WNLO), School of Physics, Huazhong University of Science and Technology (HUST), Luoyu Road 1037, Wuhan 430074, China.
authors.forename: Nishuang
authors.initials: N
authors.lastname: Liu
authors.forename: Weiwei
authors.initials: W
authors.lastname: Tian
authors.forename: Xianghui
authors.initials: X
authors.lastname: Zhang
authors.forename: Jun
authors.initials: J
authors.lastname: Su
authors.forename: Qi
authors.initials: Q
authors.lastname: Zhang
authors.forename: Yihua
authors.initials: Y
authors.lastname: Gao
mesh_terms: D004553:Electric Conductivity; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry* / Q000528:radiation effects*; D010783:Photometry / Q000295:instrumentation*; D012666:Semiconductors; D014466:Ultraviolet Rays
chemical_list: C473348:gallium nitride; D005708:Gallium