title: 170 GHz Uni-Traveling Carrier Photodiodes for InP-based photonic integrated circuits.
abstract: We demonstrate the capability of fabricating extremely high-bandwidth Uni-Traveling Carrier Photodiodes (UTC-PDs) using techniques that are suitable for active-passive monolithic integration with Multiple Quantum Well (MQW)-based photonic devices. The devices achieved a responsivity of 0.27 A/W, a 3-dB bandwidth of 170 GHz, and an output power of -9 dBm at 200 GHz. We anticipate that this work will deliver Photonic Integrated Circuits with extremely high bandwidth for optical communications and millimetre-wave applications.
authors.affiliation: Department of Electronic and Electrical Engineering, University College London, Torrington Place, WC1E 7JE, UK. e.rouvalis@ucl.ac.uk
authors.forename: E
authors.initials: E
authors.lastname: Rouvalis
authors.forename: M
authors.initials: M
authors.lastname: Chtioui
authors.forename: F
authors.initials: F
authors.lastname: van Dijk
authors.forename: F
authors.initials: F
authors.lastname: Lelarge
authors.forename: M J
authors.initials: MJ
authors.lastname: Fice
authors.forename: C C
authors.initials: CC
authors.lastname: Renaud
authors.forename: G
authors.initials: G
authors.lastname: Carpintero
authors.forename: A J
authors.initials: AJ
authors.lastname: Seeds
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D007204:Indium / Q000737:chemistry* / Q000528:radiation effects*; D008872:Microwaves; D010720:Phosphines / Q000737:chemistry* / Q000528:radiation effects*; D010783:Photometry / Q000295:instrumentation*; D012666:Semiconductors
chemical_list: D010720:Phosphines; D007204:Indium; C090882:indium phosphide