title: Three-dimensional AlZnO/Al2O3/AlZnO nanocapacitor arrays on Si substrate for energy storage.
abstract: High density three-dimensional AZO/Al2O3/AZO nanocapacitor arrays have been fabricated for energy storage applications. Using atomic layer deposition technique, the stack of AZO/Al2O3/AZO has been grown in the porous anodic alumina template which is directly formed on the Si substrate. The fabricated capacitor shows a high capacitance density of 15.3 fF/μm2 at 100 kHz, which is nearly 2.5 times over the planar capacitor under identical conditions in theory. Further, the charge-discharge characteristics of the capacitor are characterized, indicating that the resistance-capacitance time constants are equal to 300 ns for the charging and discharging processes, and have no dependence on the voltage supply. This reflects good power characteristics of the electrostatic capacitor.
authors.affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China. sjding@fudan.edu.cn.
authors.forename: Lian-Jie
authors.initials: LJ
authors.lastname: Li
authors.forename: Bao
authors.initials: B
authors.lastname: Zhu
authors.forename: Shi-Jin
authors.initials: SJ
authors.lastname: Ding
authors.forename: Hong-Liang
authors.initials: HL
authors.lastname: Lu
authors.forename: Qing-Qing
authors.initials: QQ
authors.lastname: Sun
authors.forename: Anquan
authors.initials: A
authors.lastname: Jiang
authors.forename: David Wei
authors.initials: DW
authors.lastname: Zhang
authors.forename: Chunxiang
authors.initials: C
authors.lastname: Zhu