title: One-dimensional to three-dimensional ripple-to-dome transition for SiGe on vicinal Si (1 1 10).
abstract: SiGe heteroepitaxy on vicinal Si (1 1 10) is studied as a model system for one-dimensional (1D) to three-dimensional growth mode transitions. By in situ scanning tunneling microscopy it is shown that the 1D-3D transition proceeds smoothly from perfectly facetted 1D nanoripples to coarsened superripples, tadpoles, asymmetric domes, and barns without involving coalescence or agglomeration. By extension of the studies to a wide range of SiGe compositions, a 1D-3D growth phase diagram is obtained. Total energy calculations reveal that the observed critical transition volumes are fully consistent with thermodynamic driven strain relaxation.
authors.affiliation: Institut für Halbleiter- und Festkörperphysik, Johannes Kepler University, A-4040 Linz, Austria.
authors.forename: B
authors.initials: B
authors.lastname: Sanduijav
authors.forename: D
authors.initials: D
authors.lastname: Scopece
authors.forename: D
authors.initials: D
authors.lastname: Matei
authors.forename: G
authors.initials: G
authors.lastname: Chen
authors.forename: F
authors.initials: F
authors.lastname: Schäffler
authors.forename: L
authors.initials: L
authors.lastname: Miglio
authors.forename: G
authors.initials: G
authors.lastname: Springholz