title: Solution-processed Li-Al layered-double-hydroxide platelet structures for high efficiency InGaN light emitting diodes.
abstract: High-oriented Li-Al layered double hydroxide (LDH) films were grown on an InGaN light-emitting diode (LED) structures by immersing in an aqueous alkaline Al(3+)- and Li+-containing solution. The stand upward and adjacent Li-Al LDH platelet structure was formed on the LED structure as a textured film to increase the light extraction efficiency. The light output power of the LED structure with the Li-Al LDH platelet structure had a 31% enhancement compared with a conventional LED structure at 20 mA. The reverse leakage currents, at -5V, were measured at -2.3 × 10(-8) A and -1.0 × 10(-10)A for the LED structures without and with the LDH film that indicated the Li-Al LDH film had the insulated property acted a passivation layer that had potential to replace the conventional SiO2 and Si3N4 passivation layers. The Li-Al LDH layer had the textured platelet structure and the insulated property covering whole the LED surface that has potential for high efficiency InGaN LED applications.
authors.affiliation: Department of Materials Science and Engineering, National Chung Hsing University, Taichung, 402, Taiwan. cflin@dragon.nchu.edu.tw
authors.forename: Chia-Feng
authors.initials: CF
authors.lastname: Lin
authors.forename: Peng-Han
authors.initials: PH
authors.lastname: Tsai
authors.forename: Zhi-Yu
authors.initials: ZY
authors.lastname: Lin
authors.forename: Jun-Yen
authors.initials: JY
authors.lastname: Uan
authors.forename: Chun-Min
authors.initials: CM
authors.lastname: Lin
authors.forename: Chung-Chieh
authors.initials: CC
authors.lastname: Yang
authors.forename: Bing-Cheng
authors.initials: BC
authors.lastname: Shieh