title: Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities.
abstract: We report the first room-temperature continuous-wave operation of III-V quantum-dot laser diodes monolithically grown on a Si substrate. Long-wavelength InAs/GaAs quantum-dot structures were fabricated on Ge-on-Si substrates. Room-temperature lasing at a wavelength of 1.28 μm has been achieved with threshold current densities of 163 A/cm(2) and 64.3 A/cm(2) under continuous-wave and pulsed conditions for ridge-waveguide lasers with as cleaved facets, respectively. The value of 64.3 A/cm(2) represents the lowest room-temperature threshold current density for any kind of laser on Si to date.
authors.affiliation: Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK.
authors.forename: Andrew
authors.initials: A
authors.lastname: Lee
authors.forename: Qi
authors.initials: Q
authors.lastname: Jiang
authors.forename: Mingchu
authors.initials: M
authors.lastname: Tang
authors.forename: Alwyn
authors.initials: A
authors.lastname: Seeds
authors.forename: Huiyun
authors.initials: H
authors.lastname: Liu
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D003460:Crystallization / Q000379:methods; D004553:Electric Conductivity; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D054023:Lasers, Semiconductor; D008422:Materials Testing; D045663:Quantum Dots; D012825:Silicon / Q000737:chemistry*
chemical_list: D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide; D012825:Silicon