title: Mid-infrared HgTe/As2S3 field effect transistors and photodetectors.
abstract: HgTe colloidal quantum dots (CQD) in an inorganic As(2)S(3) matrix allow 100-fold higher mobility with optimized transport properties compared to HgTe-organic CQD film while remaining intrinsic. The material's electronic properties are measured by field effect transistors as a function of temperature and the responsivity and detectivity of the mid-IR photoconductors are discussed.
authors.affiliation: James Franck Institute, The University of Chicago, IL 60637, USA.
authors.forename: Emmanuel
authors.initials: E
authors.lastname: Lhuillier
authors.forename: Sean
authors.initials: S
authors.lastname: Keuleyan
authors.forename: Pavlo
authors.initials: P
authors.lastname: Zolotavin
authors.forename: Philippe
authors.initials: P
authors.lastname: Guyot-Sionnest