title: Regrowth-free high-gain InGaAsP/InP active-passive platform via ion implantation.
abstract: We demonstrate a regrowth-free material platform to create monolithic InGaAsP/InP photonic integrated circuits (PICs) with high-gain active and low-loss passive sections via a PL detuning of >135 nm. We show 2.5 µm wide by 400 µm long semiconductor optical amplifiers with >40 dB/mm gain at 1570 nm, and passive waveguide losses <2.3 dB/mm. The bandgap in the passive section is detuned using low-energy 190 keV channelized phosphorous implantation and subsequent rapid thermal annealing to achieve impurity-induced quantum well intermixing (QWI). The PL wavelengths in the active and passive sections are 1553 and 1417 nm, respectively. Lasing wavelengths for 500 µm Fabry-Perot lasers are 1567 and 1453 nm, respectively.
authors.affiliation: Electrical and Computer Engineering Department, University of California at Santa Barbara, Santa Barbara, CA 93106, USA. jparker@ece.ucsb.edu
authors.forename: John S
authors.initials: JS
authors.lastname: Parker
authors.forename: Abirami
authors.initials: A
authors.lastname: Sivananthan
authors.forename: Erik
authors.initials: E
authors.lastname: Norberg
authors.forename: Larry A
authors.initials: LA
authors.lastname: Coldren
mesh_terms: D001152:Arsenicals / Q000737:chemistry* / Q000528:radiation effects; D005708:Gallium / Q000737:chemistry* / Q000528:radiation effects; D007204:Indium / Q000737:chemistry* / Q000528:radiation effects; D007477:Ions; D008422:Materials Testing; D010720:Phosphines / Q000737:chemistry* / Q000528:radiation effects
chemical_list: D001152:Arsenicals; D007477:Ions; D010720:Phosphines; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide; C090882:indium phosphide