title: Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface.
abstract: InGaN flip-chip light-emitting diodes on bulk GaN substrate (FS-FCLEDs) with hemisphere-cones-hybrid surface were fabricated using both dry etching with CsCl nanoislands as mask and chemical wet etching. Compared with the corresponding flat LEDs, the light output power of FS-FCLEDs with combined nanostructures shows an enhancement factor of 1.9 at 350mA injection current. Finite-difference time-domain (FDTD) simulation results show that such enhancement of the output power is mainly attributed to the reduction of the total internal reflection and increase of the light scattering probability in the hemisphere-cones-hybrid surface, which is due to a combination effect of light diffraction at the nanocones edges, and light interference within the hemisphere and nanocones.
authors.affiliation: State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
authors.forename: Bo
authors.initials: B
authors.lastname: Sun
authors.forename: Lixia
authors.initials: L
authors.lastname: Zhao
authors.forename: Tongbo
authors.initials: T
authors.lastname: Wei
authors.forename: Xiaoyan
authors.initials: X
authors.lastname: Yi
authors.forename: Zhiqiang
authors.initials: Z
authors.lastname: Liu
authors.forename: Guohong
authors.initials: G
authors.lastname: Wang
authors.forename: Jinmin
authors.initials: J
authors.lastname: Li
authors.forename: Futing
authors.initials: F
authors.lastname: Yi
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D008029:Lighting / Q000295:instrumentation*; D012666:Semiconductors
chemical_list: C473348:gallium nitride; D005708:Gallium