title: Enhanced photoluminescence and electroluminescence of multilayer GeSi islands on Si001 substrates by phosphorus-doping.
abstract: Ge/Si heterojunction light emitting diodes with 20-bilayers undoped or phosphorus in situ doped GeSi islands were fabricated on n(+)(-)Si(001) substrates by ultrahigh vacuum chemical vapor deposition (UHV-CVD). Enhanced room temperature photoluminescence (PL) and electroluminescence (EL) around 1.5 μm were observed from the devices with phosphorus-doped GeSi islands. Theoretical calculations indicated that the emission is from the radiative recombination in GeSi islands. The intensity enhancement of PL and EL is attributed to the sufficient supply of electrons in active layer for radiative recombination.
authors.affiliation: State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
authors.forename: Zhi
authors.initials: Z
authors.lastname: Liu
authors.forename: Weixuan
authors.initials: W
authors.lastname: Hu
authors.forename: Shaojian
authors.initials: S
authors.lastname: Su
authors.forename: Chong
authors.initials: C
authors.lastname: Li
authors.forename: Chuanbo
authors.initials: C
authors.lastname: Li
authors.forename: Chunlai
authors.initials: C
authors.lastname: Xue
authors.forename: Yaming
authors.initials: Y
authors.lastname: Li
authors.forename: Yuhua
authors.initials: Y
authors.lastname: Zuo
authors.forename: Buwen
authors.initials: B
authors.lastname: Cheng
authors.forename: Qiming
authors.initials: Q
authors.lastname: Wang
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D005857:Germanium / Q000737:chemistry*; D008029:Lighting / Q000295:instrumentation*; D049449:Luminescence; D010758:Phosphorus / Q000737:chemistry*; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*
chemical_list: D005857:Germanium; D010758:Phosphorus; D012825:Silicon