title: FET performance and substitution effect on 2,6-dithienylanthracene devices prepared by photoirradiation of their diketone precursors.
abstract: Hole mobility was evaluated by top-contact bottom gate field effect transistor and time resolved microwave conductivity measurements in 2,6-dithienylanthracene and hexyl-substituted 2,6-dithienylanthracene films prepared by spin-coating of their α-diketone precursors followed by photoirradiation, revealing enough high potentials for semiconducting films with charge carrier mobilities of 0.8-0.9 cm(2) V(-1) s(-1) in the photo-irradiated films.
authors.affiliation: Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, 630-0192, Japan. hyamada@ms.naist.jp
authors.forename: Hiroko
authors.initials: H
authors.lastname: Yamada
authors.forename: Chika
authors.initials: C
authors.lastname: Ohashi
authors.forename: Tatsuya
authors.initials: T
authors.lastname: Aotake
authors.forename: Shuhei
authors.initials: S
authors.lastname: Katsuta
authors.forename: Yoshihito
authors.initials: Y
authors.lastname: Honsho
authors.forename: Hiroo
authors.initials: H
authors.lastname: Kawano
authors.forename: Tetsuo
authors.initials: T
authors.lastname: Okujima
authors.forename: Hidemitsu
authors.initials: H
authors.lastname: Uno
authors.forename: Noboru
authors.initials: N
authors.lastname: Ono
authors.forename: Shu
authors.initials: S
authors.lastname: Seki
authors.forename: Ken-ichi
authors.initials: K
authors.lastname: Nakayama