Infrared dielectric properties of low-stress silicon nitride.
Silicon nitride thin films play an important role in the realization of sensors, filters, and high-performance circuits. Estimates of the dielectric function in the far- and mid-IR regime are derived from the observed transmittance spectra for a commonly employed low-stress silicon nitride formulation. The experimental, modeling, and numerical methods used to extract the dielectric parameters with an accuracy of approximately 4% are presented.
NASA Goddard Space Flight Center, 8800 Greenbelt Road, Greenbelt, Maryland 20771, USA. Giuseppe.Cataldo@nasa.gov
Giuseppe
G
Cataldo
James A
JA
Beall
Hsiao-Mei
HM
Cho
Brendan
B
McAndrew
Michael D
MD
Niemack
Edward J
EJ
Wollack