Improved electrical conductivity of graphene films integrated with metal nanowires.
Polycrystalline graphene grown by chemical vapor deposition (CVD) on metals and transferred onto arbitrary substrates has line defects and disruptions such as wrinkles, ripples, and folding that adversely affect graphene transport properties through the scattering of the charge carriers. It is found that graphene assembled with metal nanowires (NWs) dramatically decreases the resistance of graphene films. Graphene/NW films with a sheet resistance comparable to that of the intrinsic resistance of graphene have been obtained and tested as a transparent electrode replacing indium tin oxide films in electrochromic (EC) devices. The successful integration of such graphene/NW films into EC devices demonstrates their potential for a wide range of optoelectronic device applications.
Department of Mechanical Engineering and the Materials Science and Engineering Program, The University of Texas at Austin, 1 University Station C2200, Austin, Texas 78712, USA.
Iskandar N
IN
Kholmanov
Carl W
CW
Magnuson
Ali E
AE
Aliev
Huifeng
H
Li
Bin
B
Zhang
Ji Won
JW
Suk
Li Li
LL
Zhang
Eric
E
Peng
S Hossein
SH
Mousavi
Alexander B
AB
Khanikaev
Richard
R
Piner
Gennady
G
Shvets
Rodney S
RS
Ruoff