Unveiling self-assembled monolayers' potential for molecular spintronics: spin transport at high voltage.
Molecular magnetic tunnel junctions using self-assembled monolayers (SAMs) as tunnel barriers show stable and efficient spin transport properties. Large tunnel magnetoresistance with a flat bias voltage dependence of the magnetoresistance is observed in La(2/3) Sr(1/3) MnO(3) /dodecylphosphonic acid SAM/Co nanocontacts. This opens the door to spintronic tailoring though SAM engineering and could also lead to new venues for spin injection in organic devices.
Unité Mixte de Physique CNRS/Thales, 1 Av. A. Fresnel, 91767 Palaiseau, France and Université Paris-Sud, 91405 Orsay, France.
Marta
M
Galbiati
Clément
C
Barraud
Sergio
S
Tatay
Karim
K
Bouzehouane
Cyrile
C
Deranlot
Eric
E
Jacquet
Albert
A
Fert
Pierre
P
Seneor
Richard
R
Mattana
Frédéric
F
Petroff
D004581:Electronics; D008280:Magnetics; D053758:Nanoparticles / Q000737:chemistry*; D009942:Organometallic Compounds / Q000737:chemistry*; D012666:Semiconductors
D009942:Organometallic Compounds