title: Room-temperature electron spin amplifier based on Ga(In)NAs alloys.
abstract: The first experimental demonstration of a spin amplifier at room temperature is presented. An efficient, defect-enabled spin amplifier based on a non-magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for conduction electrons and a high cut-off frequency of up to 1 GHz.
authors.affiliation: Department of Physics, Chemistry and Biology, Linköping University, Sweden.
authors.forename: Yuttapoom
authors.initials: Y
authors.lastname: Puttisong
authors.forename: Irina A
authors.initials: IA
authors.lastname: Buyanova
authors.forename: Aaron J
authors.initials: AJ
authors.lastname: Ptak
authors.forename: Charles W
authors.initials: CW
authors.lastname: Tu
authors.forename: Lutz
authors.initials: L
authors.lastname: Geelhaar
authors.forename: Henning
authors.initials: H
authors.lastname: Riechert
authors.forename: Weimin M
authors.initials: WM
authors.lastname: Chen
mesh_terms: D000497:Alloys / Q000737:chemistry; D000669:Amplifiers, Electronic; D001152:Arsenicals / Q000737:chemistry*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008422:Materials Testing; D012666:Semiconductors; D013113:Spin Labels; D013696:Temperature
chemical_list: D000497:Alloys; D001152:Arsenicals; D013113:Spin Labels; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide