title: Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots.
abstract: For InAs/GaAs(001) quantum dot (QD) system, the wetting layer (WL) evolution and its temperature dependence were studied using reflectance difference spectroscopy and were analyzed with a rate equation model. WL thicknesses showed a monotonic increase at relatively low growth temperatures but showed an initial increase and then decrease at higher temperatures, which were unexpected from a thermodynamic understanding. By adopting a rate equation model, the temperature dependence of QD formation rate was assigned as the origin of different WL evolutions. A brief discussion on the indium desorption was given. Those results gave hints of the kinetic aspects of QD self-assembly.
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing, 100083, People's Republic of China. yhchen@semi.ac.cn.
authors.forename: Hongyi
authors.initials: H
authors.lastname: Zhang
authors.forename: Yonghai
authors.initials: Y
authors.lastname: Chen
authors.forename: Guanyu
authors.initials: G
authors.lastname: Zhou
authors.forename: Chenguang
authors.initials: C
authors.lastname: Tang
authors.forename: Zhanguo
authors.initials: Z
authors.lastname: Wang