title: High-density integration of carbon nanotubes via chemical self-assembly.
abstract: Carbon nanotubes have potential in the development of high-speed and power-efficient logic applications. However, for such technologies to be viable, a high density of semiconducting nanotubes must be placed at precise locations on a substrate. Here, we show that ion-exchange chemistry can be used to fabricate arrays of individually positioned carbon nanotubes with a density as high as 1 × 10(9) cm(-2)-two orders of magnitude higher than previous reports. With this approach, we assembled a high density of carbon-nanotube transistors in a conventional semiconductor fabrication line and then electrically tested more than 10,000 devices in a single chip. The ability to characterize such large distributions of nanotube devices is crucial for analysing transistor performance, yield and semiconducting nanotube purity.
authors.affiliation: IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, USA. hpark@us.ibm.com
authors.forename: Hongsik
authors.initials: H
authors.lastname: Park
authors.forename: Ali
authors.initials: A
authors.lastname: Afzali
authors.forename: Shu-Jen
authors.initials: SJ
authors.lastname: Han
authors.forename: George S
authors.initials: GS
authors.lastname: Tulevski
authors.forename: Aaron D
authors.initials: AD
authors.lastname: Franklin
authors.forename: Jerry
authors.initials: J
authors.lastname: Tersoff
authors.forename: James B
authors.initials: JB
authors.lastname: Hannon
authors.forename: Wilfried
authors.initials: W
authors.lastname: Haensch