title: Effects of an intense, high-frequency laser field on bound states in Ga1 - xInxNyAs1 - y/GaAs double quantum well.
abstract: Within the envelope function approach and the effective-mass approximation, we have investigated theoretically the effect of an intense, high-frequency laser field on the bound states in a GaxIn1 - xNyAs1 - y/GaAs double quantum well for different nitrogen and indium mole concentrations. The laser-dressed potential, bound states, and squared wave functions related to these bound states in Ga1 - xInxNyAs1 - y/GaAs double quantum well are investigated as a function of the position and laser-dressing parameter. Our numerical results show that both intense laser field and nitrogen (indium) incorporation into the GaInNAs have strong influences on carrier localization.
authors.affiliation: Physics Department, Cumhuriyet University, Sivas, 58140, Turkey. fungan@cumhuriyet.edu.tr.
authors.forename: Fatih
authors.initials: F
authors.lastname: Ungan
authors.forename: Unal
authors.initials: U
authors.lastname: Yesilgul
authors.forename: Serpil
authors.initials: S
authors.lastname: Sakiroğlu
authors.forename: Esin
authors.initials: E
authors.lastname: Kasapoglu
authors.forename: Ayse
authors.initials: A
authors.lastname: Erol
authors.forename: Mehmet Cetin
authors.initials: MC
authors.lastname: Arikan
authors.forename: Huseyin
authors.initials: H
authors.lastname: Sarı
authors.forename: Ismail
authors.initials: I
authors.lastname: Sökmen