title: Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices.
abstract: A flexible, all reduced graphene oxide non-volatile memory device, with lightly reduced GO as an active layer and highly reduced GO as both top and bottom electrodes, is fabricated by a full-solution process and its performance is characterized. It provides a convenient method to construct other all-carbon devices.
authors.affiliation: School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.
authors.forename: Juqing
authors.initials: J
authors.lastname: Liu
authors.forename: Zongyou
authors.initials: Z
authors.lastname: Yin
authors.forename: Xiehong
authors.initials: X
authors.lastname: Cao
authors.forename: Fei
authors.initials: F
authors.lastname: Zhao
authors.forename: Lianhui
authors.initials: L
authors.lastname: Wang
authors.forename: Wei
authors.initials: W
authors.lastname: Huang
authors.forename: Hua
authors.initials: H
authors.lastname: Zhang
mesh_terms: D016248:Computer Storage Devices; D004566:Electrodes; D004867:Equipment Design; D006108:Graphite / Q000737:chemistry*; D036103:Nanotechnology / Q000295:instrumentation*; D010084:Oxidation-Reduction; D010087:Oxides / Q000737:chemistry*; D018583:Pliability; D013696:Temperature; D014835:Volatilization
chemical_list: D010087:Oxides; D006108:Graphite