title: Fabrication of n-type ZnO nanowire/graphene/p-type silicon hybrid structures and electrical properties of heterojunctions.
abstract: Compared to the p-n junction type device (Device A) with an n-type ZnO nanowire (n-ZnO)/p-type silicon (p-Si) hybrid structure, the newly designed device (Device B) with an n-ZnO/reduced graphene oxide sheet (rGO)/p-Si hybrid structure displays interesting electrical characteristics such as lower turn-on voltage and better current symmetry. The addition of rGO between n-ZnO and the p-Si substrate enables tuning of the p-n junctions into back-to-back Schottky junctions and lowering of the turn-on voltages, implying great potential applications in electronic and optoelectronic devices. The electrical characteristics and operating mechanism of these two devices are fully discussed.
authors.affiliation: Department of Physics, Jinan University, Guangzhou, Guangdong, China.
authors.forename: Zhiwen
authors.initials: Z
authors.lastname: Liang
authors.forename: Xiang
authors.initials: X
authors.lastname: Cai
authors.forename: Shaozao
authors.initials: S
authors.lastname: Tan
authors.forename: Peihua
authors.initials: P
authors.lastname: Yang
authors.forename: Long
authors.initials: L
authors.lastname: Zhang
authors.forename: Xiang
authors.initials: X
authors.lastname: Yu
authors.forename: Keqiu
authors.initials: K
authors.lastname: Chen
authors.forename: Hanming
authors.initials: H
authors.lastname: Zhu
authors.forename: Pengyi
authors.initials: P
authors.lastname: Liu
authors.forename: Wenjie
authors.initials: W
authors.lastname: Mai