title: A single-device universal logic gate based on a magnetically enhanced memristor.
abstract: Memristors are one of the most promising candidates for future information and communications technology (ICT) architectures. Two experimental proofs of concept are presented based on the intermixing of spintronic and memristive effects into a single device, a magnetically enhanced memristor (MEM). By exploiting the interaction between the memristance and the giant magnetoresistance (GMR), a universal implication (IMP) logic gate based on a single MEM device is realized.
authors.affiliation: Consiglio Nazionale delle Ricerche - Istituto per lo, Studio dei Materiali Nanostrutturati, (CNR-ISMN) - via P. Gobetti 101, 40129 Bologna, Italy. m.prezioso@bo.ismn.cnr.it
authors.forename: Mirko
authors.initials: M
authors.lastname: Prezioso
authors.forename: Alberto
authors.initials: A
authors.lastname: Riminucci
authors.forename: Patrizio
authors.initials: P
authors.lastname: Graziosi
authors.forename: Ilaria
authors.initials: I
authors.lastname: Bergenti
authors.forename: Rajib
authors.initials: R
authors.lastname: Rakshit
authors.forename: Raimondo
authors.initials: R
authors.lastname: Cecchini
authors.forename: Anna
authors.initials: A
authors.lastname: Vianelli
authors.forename: Francesco
authors.initials: F
authors.lastname: Borgatti
authors.forename: Norman
authors.initials: N
authors.lastname: Haag
authors.forename: M
authors.initials: M
authors.lastname: Willis
authors.forename: Alan J
authors.initials: AJ
authors.lastname: Drew
authors.forename: William P
authors.initials: WP
authors.lastname: Gillin
authors.forename: Valentin A
authors.initials: VA
authors.lastname: Dediu