title: Enhanced charge carrier mobility in two-dimensional high dielectric molybdenum oxide.
abstract: We demonstrate that the energy bandgap of layered, high-dielectric α-MoO(3) can be reduced to values viable for the fabrication of 2D electronic devices. This is achieved through embedding Coulomb charges within the high dielectric media, advantageously limiting charge scattering. As a result, devices with α-MoO(3) of ∼11 nm thickness and carrier mobilities larger than 1100 cm(2) V(-1) s(-1) are obtained.
authors.affiliation: MicroNanoElectronics and Sensor Technology, Research Group and Functional Materials and Microsystems Research Group, School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, Australia. shiva.balendhran@rmit.edu.au
authors.forename: Sivacarendran
authors.initials: S
authors.lastname: Balendhran
authors.forename: Junkai
authors.initials: J
authors.lastname: Deng
authors.forename: Jian Zhen
authors.initials: JZ
authors.lastname: Ou
authors.forename: Sumeet
authors.initials: S
authors.lastname: Walia
authors.forename: James
authors.initials: J
authors.lastname: Scott
authors.forename: Jianshi
authors.initials: J
authors.lastname: Tang
authors.forename: Kang L
authors.initials: KL
authors.lastname: Wang
authors.forename: Matthew R
authors.initials: MR
authors.lastname: Field
authors.forename: Salvy
authors.initials: S
authors.lastname: Russo
authors.forename: Serge
authors.initials: S
authors.lastname: Zhuiykov
authors.forename: Michael S
authors.initials: MS
authors.lastname: Strano
authors.forename: Nikhil
authors.initials: N
authors.lastname: Medhekar
authors.forename: Sharath
authors.initials: S
authors.lastname: Sriram
authors.forename: Madhu
authors.initials: M
authors.lastname: Bhaskaran
authors.forename: Kourosh
authors.initials: K
authors.lastname: Kalantar-zadeh