title: Electronically nonalloyed state of a statistical single atomic layer semiconductor alloy.
abstract: Using atomically and momentum resolved scanning tunneling microscopy and spectroscopy, we demonstrate that a two-dimensional (2D) √3 × √3 semiconducting Ga-Si single atomic alloy layer exhibits an electronic structure with atomic localization and which is different at the Si and Ga atom sites. No indication of an interaction or an electronic intermixing and formation of a new alloy band structure is present, as if no alloying happened. The electronic localization is traced back to the lack of intra alloy bonds due to the 2D atomically confined structure of the alloy overlayer.
authors.affiliation: Peter Grünberg Institut, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany. p.ebert@fz-juelich.de
authors.forename: Ph
authors.initials: P
authors.lastname: Ebert
authors.forename: S
authors.initials: S
authors.lastname: Landrock
authors.forename: Y
authors.initials: Y
authors.lastname: Jiang
authors.forename: K H
authors.initials: KH
authors.lastname: Wu
authors.forename: E G
authors.initials: EG
authors.lastname: Wang
authors.forename: R E
authors.initials: RE
authors.lastname: Dunin-Borkowski