title: Axial SiGe heteronanowire tunneling field-effect transistors.
abstract: We present silicon-compatible trigated p-Ge/i-Si/n-Si axial heteronanowire tunneling field-effect transistors (TFETs), where on-state tunneling occurs in the Ge drain section, while off-state leakage is dominated by the Si junction in the source. Our TFETs have high I(ON) ~ 2 μA/μm, fully suppressed ambipolarity, and a subthreshold slope SS ~ 140 mV/decade over 4 decades of current with lowest SS ~ 50 mV/decade. Device operation in the tunneling mode is confirmed by three-dimensional TCAD simulation. Interestingly, in addition to the TFET mode, our devices work as standard nanowire FETs with a good I(ON)/I(OFF) ratio when the source-drain junction is forward-biased. The improved transport in both biasing modes confirms the benefits of utilizing bandgap engineered axial nanowires for enhancing device performance.
authors.affiliation: Department of Physics and School of Engineering, Brown University, Providence, Rhode Island 02912, USA. son_le@brown.edu
authors.forename: Son T
authors.initials: ST
authors.lastname: Le
authors.forename: P
authors.initials: P
authors.lastname: Jannaty
authors.forename: Xu
authors.initials: X
authors.lastname: Luo
authors.forename: A
authors.initials: A
authors.lastname: Zaslavsky
authors.forename: Daniel E
authors.initials: DE
authors.lastname: Perea
authors.forename: Shadi A
authors.initials: SA
authors.lastname: Dayeh
authors.forename: S T
authors.initials: ST
authors.lastname: Picraux