title: Correlation between In content and emission wavelength of In(x)Ga(1-x)N/GaN nanowire heterostructures.
abstract: GaN nanowire ensembles with axial In(x)Ga(1-x)N multi-quantum-wells (MQWs) were grown by molecular beam epitaxy. In a series of samples we varied the In content in the MQWs from almost zero to around 20%. Within the nanowire ensemble, the MQWs fluctuate strongly in composition and size. Statistical information about the composition was obtained from x-ray diffraction and Raman spectroscopy. Photoluminescence at room temperature was obtained in the range of 2.2 to 2.5 eV, depending on In content. Contrary to planar MQWs, the intensity increases with increasing In content. We compare the observed emission energies with transition energies obtained from a one-dimensional model, and conclude that several mechanisms for carrier localization affect the luminescence of these three-dimensional structures.
authors.affiliation: Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany.
authors.forename: M
authors.initials: M
authors.lastname: Wölz
authors.forename: J
authors.initials: J
authors.lastname: Lähnemann
authors.forename: O
authors.initials: O
authors.lastname: Brandt
authors.forename: V M
authors.initials: VM
authors.lastname: Kaganer
authors.forename: M
authors.initials: M
authors.lastname: Ramsteiner
authors.forename: C
authors.initials: C
authors.lastname: Pfüller
authors.forename: C
authors.initials: C
authors.lastname: Hauswald
authors.forename: C N
authors.initials: CN
authors.lastname: Huang
authors.forename: L
authors.initials: L
authors.lastname: Geelhaar
authors.forename: H
authors.initials: H
authors.lastname: Riechert