title: Scanning tunneling microscopy of interface properties of Bi2Se3 on FeSe.
abstract: We investigate the heteroepitaxial growth of Bi(2)Se(3) films on FeSe substrates by low-temperature scanning tunneling microscopy/spectroscopy. The growth of Bi(2)Se(3) on FeSe proceeds via van der Waals epitaxy with atomically flat morphology. A striped moiré pattern originating from the lattice mismatch between Bi(2)Se(3) and FeSe is observed. Tunneling spectra reveal the spatially inhomogeneous electronic structure of the Bi(2)Se(3) thin films, which can be ascribed to the charge transfer at the interface.
authors.affiliation: State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
authors.forename: Yilin
authors.initials: Y
authors.lastname: Wang
authors.forename: Yeping
authors.initials: Y
authors.lastname: Jiang
authors.forename: Mu
authors.initials: M
authors.lastname: Chen
authors.forename: Zhi
authors.initials: Z
authors.lastname: Li
authors.forename: Canli
authors.initials: C
authors.lastname: Song
authors.forename: Lili
authors.initials: L
authors.lastname: Wang
authors.forename: Ke
authors.initials: K
authors.lastname: He
authors.forename: Xi
authors.initials: X
authors.lastname: Chen
authors.forename: Xucun
authors.initials: X
authors.lastname: Ma
authors.forename: Qi-Kun
authors.initials: QK
authors.lastname: Xue