title: The effect of magnetic field on the impurity binding energy of shallow donor impurities in a Ga1-xInxNyAs1-y/GaAs quantum well.
abstract: Using a variational approach, we have investigated the effects of the magnetic field, the impurity position, and the nitrogen and indium concentrations on impurity binding energy in a Ga1-xInxNyAs1-y/GaAs quantum well. Our calculations have revealed the dependence of impurity binding on the applied magnetic field, the impurity position, and the nitrogen and indium concentrations.
authors.affiliation: Physics Department, Cumhuriyet University, Sivas, 58140, Turkey. uyesilgul@cumhuriyet.edu.tr.
authors.forename: Unal
authors.initials: U
authors.lastname: Yesilgul
authors.forename: Fatih
authors.initials: F
authors.lastname: Ungan
authors.forename: Serpil
authors.initials: S
authors.lastname: Sakiroğlu
authors.forename: Carlos
authors.initials: C
authors.lastname: Duque
authors.forename: Miguel
authors.initials: M
authors.lastname: Mora-Ramos
authors.forename: Esin
authors.initials: E
authors.lastname: Kasapoglu
authors.forename: Huseyin
authors.initials: H
authors.lastname: Sari
authors.forename: Ismail
authors.initials: I
authors.lastname: Sökmen