title: Top-down fabricated silicon-nanowire-based field-effect transistor device on a (111) silicon wafer.
abstract: The unique anisotropic wet-etching mechanism of a (111) silicon wafer facilitates the highly controllable top-down fabrication of silicon nanowires (SiNWs) with conventional microfabrication technology. The fabrication process is compatible with the surface manufacturing technique, which is employed to build a nanowire-based field-effect transistor structure on the fabricated SiNW.
authors.affiliation: State Key Laboratory of Transducer Technology & Science and Technology on Microsystem Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China.
authors.forename: Xiao
authors.initials: X
authors.lastname: Yu
authors.forename: Yuchen
authors.initials: Y
authors.lastname: Wang
authors.forename: Hong
authors.initials: H
authors.lastname: Zhou
authors.forename: Yanxiang
authors.initials: Y
authors.lastname: Liu
authors.forename: Yi
authors.initials: Y
authors.lastname: Wang
authors.forename: Tie
authors.initials: T
authors.lastname: Li
authors.forename: Yuelin
authors.initials: Y
authors.lastname: Wang
mesh_terms: D008855:Microscopy, Electron, Scanning; D036103:Nanotechnology / Q000379:methods*; D053770:Nanowires / Q000737:chemistry* / Q000648:ultrastructure; D012825:Silicon / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D012825:Silicon