title: Nonvolatile multibit Schottky memory based on single n-type Ga doped CdSe nanowires.
abstract: Nonvolatile resistive switching has been observed for the first time in CdSe nanowire (NW)/Au Schottky barrier diodes, where a Schottky contact electrode and an Ohmic contact electrode were formed at the Au/CdSe NW and CdSe NW/In interfaces, respectively. The CdSe NWs Schottky devices were found to possess multibit storage ability in an individual nanowire, and exhibited excellent memory characteristics, with a resistance on/off ratio exceeding four orders of magnitude, a long retention time of over 10(4) s and a lower operating voltage of 2 V. By replacing the SiO(2)/Si substrate with a poly ethylene terephthalate substrate, flexible and transparent memory devices with superior stability under strain were realized. The resistive switching of CdSe NW/Au Schottky devices is understood by electron trapping and detrapping in the interfacial oxide layer. Our findings provide a viable way to create new functional high-density nonvolatile multibit memory devices compatible with simple processing techniques for normal one-dimensional nanomaterials.
authors.affiliation: School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China.
authors.forename: Di
authors.initials: D
authors.lastname: Wu
authors.forename: Yang
authors.initials: Y
authors.lastname: Jiang
authors.forename: Yongqiang
authors.initials: Y
authors.lastname: Yu
authors.forename: Yugang
authors.initials: Y
authors.lastname: Zhang
authors.forename: Guohua
authors.initials: G
authors.lastname: Li
authors.forename: Zhifeng
authors.initials: Z
authors.lastname: Zhu
authors.forename: Chunyan
authors.initials: C
authors.lastname: Wu
authors.forename: Li
authors.initials: L
authors.lastname: Wang
authors.forename: Linbao
authors.initials: L
authors.lastname: Luo
authors.forename: Jiansheng
authors.initials: J
authors.lastname: Jie