title: InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers.
abstract: InGaN/GaN multilayer quantum dot (QD) structure is a potential type of active regions for yellow-green light-emitting diodes (LEDs). The surface morphologies and crystalline quality of GaN barriers are critical to the uniformity of InGaN QD layers. While GaN barriers were grown in multi-QD layers, we used improved growth parameters by increasing the growth temperature and switching the carrier gas from N2 to H2 in the metal organic vapor phase epitaxy. As a result, a 10-layer InGaN/GaN QD LED is demonstrated successfully. The transmission electron microscopy image shows the uniform multilayer InGaN QDs clearly. As the injection current increases from 5 to 50 mA, the electroluminescence peak wavelength shifts from 574 to 537 nm.
authors.affiliation: Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing, 100084, People's Republic of China. wanglai@mail.tsinghua.edu.cn.
authors.forename: Wenbin
authors.initials: W
authors.lastname: Lv
authors.forename: Lai
authors.initials: L
authors.lastname: Wang
authors.forename: Jiaxing
authors.initials: J
authors.lastname: Wang
authors.forename: Zhibiao
authors.initials: Z
authors.lastname: Hao
authors.forename: Yi
authors.initials: Y
authors.lastname: Luo