title: Effect of redox proteins on the behavior of non-volatile memory.
abstract: We demonstrated the memory effect of redox proteins in organic field-effect transistor (OFET) flash memory devices. Redox proteins include a heme structure, which has reversible redox reactions. These properties of the proteins could be successfully applied to the flash memory devices, which show a considerable memory window (~11 V) and relatively good endurance properties (~over 100 cycles).
authors.affiliation: Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul, 151-744, Republic of Korea.
authors.forename: Ji Hyun
authors.initials: JH
authors.lastname: Lee
authors.forename: Seung Chul
authors.initials: SC
authors.lastname: Yew
authors.forename: Jinhan
authors.initials: J
authors.lastname: Cho
authors.forename: Youn Sang
authors.initials: YS
authors.lastname: Kim
mesh_terms: D016248:Computer Storage Devices; D006418:Heme / Q000737:chemistry; D010084:Oxidation-Reduction; D011506:Proteins / Q000737:chemistry*
chemical_list: D011506:Proteins; D006418:Heme