title: Effects of shutter transients in molecular beam epitaxy.
abstract: : We have studied the effects of shutter transients (STs) in molecular beam epitaxy (MBE). Two series of samples were grown by MBE and evaluated by X-ray diffraction (XRD) and X-ray reflectivity (XRR) measurements. The effects of STs were evaluated by growth rate (GR) analysis using a combination of growth time (GT) and thickness evaluated by XRD and XRR measurements. We revealed two opposite effects of STs: (1) overshoot of GR and (2) increase in GR with GT and subsequent saturation. Each effect was consistent with the previous studies; however, the previous studies showed no relationships between these two effects. By considering closing time of the shutter, the two opposite effects were well understood.
authors.affiliation: National Institute of Advanced Industrial Science and Technology (AIST), Network Photonics Research Center, AIST Tsukuba Central2, 1-1-1 Umezono, Ibaraki, 305-8568, Tsukuba, Japan. s-gozu@aist.go.jp.
authors.forename: Shin-Ichiro
authors.initials: S
authors.lastname: Gozu
authors.forename: Teruo
authors.initials: T
authors.lastname: Mozume
authors.forename: Haruhiko
authors.initials: H
authors.lastname: Kuwatsuka
authors.forename: Hiroshi
authors.initials: H
authors.lastname: Ishikawa