title: Doping-based stabilization of the M2 phase in free-standing VO₂ nanostructures at room temperature.
abstract: A new high-yield method of doping VO(2) nanostructures with aluminum is proposed, which renders possible stabilization of the monoclinic M2 phase in free-standing nanoplatelets in ambient conditions and opens an opportunity for realization of a purely electronic Mott transition field-effect transistor without an accompanying structural transition. The synthesized free-standing M2-phase nanostructures are shown to have very high crystallinity and an extremely sharp temperature-driven metal-insulator transition. A combination of X-ray microdiffraction, micro-Raman spectroscopy, energy-dispersive X-ray spectroscopy, and four-probe electrical measurements allowed thorough characterization of the doped nanostructures. Light is shed onto some aspects of the nanostructure growth, and the temperature-doping level phase diagram is established.
authors.affiliation: The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States. strelcove@ornl.gov
authors.forename: Evgheni
authors.initials: E
authors.lastname: Strelcov
authors.forename: Alexander
authors.initials: A
authors.lastname: Tselev
authors.forename: Ilia
authors.initials: I
authors.lastname: Ivanov
authors.forename: John D
authors.initials: JD
authors.lastname: Budai
authors.forename: Jie
authors.initials: J
authors.lastname: Zhang
authors.forename: Jonathan Z
authors.initials: JZ
authors.lastname: Tischler
authors.forename: Ivan
authors.initials: I
authors.lastname: Kravchenko
authors.forename: Sergei V
authors.initials: SV
authors.lastname: Kalinin
authors.forename: Andrei
authors.initials: A
authors.lastname: Kolmakov