title: Heterogeneous integration of InGaAs nanowires on the rear surface of Si solar cells for efficiency enhancement.
abstract: We demonstrate energy-conversion-efficiency (η) enhancement of silicon (Si) solar cells by the heterogeneous integration of an In(x)Ga(1-x)As nanowire (NW) array on the rear surface. The NWs are grown via a catalyst-free, self-assembled method on Si(111) substrates using metalorganic chemical vapor deposition (MOCVD). Heavily p-doped In(x)Ga(1-x)As (x ≈ 0.7) NW arrays are utilized as not only back-reflectors but also low bandgap rear-point-contacts of the Si solar cells. External quantum efficiency of the hybrid In(x)Ga(1-x)As NW-Si solar cell is increased over the entire solar response wavelength range; and η is enhanced by 36% in comparison to Si solar cells processed under the same condition without the NWs.
authors.affiliation: Department of Electrical and Computer Engineering, University of Illinois, Urbana, Illinois 61801, USA.
authors.forename: Jae Cheol
authors.initials: JC
authors.lastname: Shin
authors.forename: Parsian K
authors.initials: PK
authors.lastname: Mohseni
authors.forename: Ki Jun
authors.initials: KJ
authors.lastname: Yu
authors.forename: Stephanie
authors.initials: S
authors.lastname: Tomasulo
authors.forename: Kyle H
authors.initials: KH
authors.lastname: Montgomery
authors.forename: Minjoo L
authors.initials: ML
authors.lastname: Lee
authors.forename: John A
authors.initials: JA
authors.lastname: Rogers
authors.forename: Xiuling
authors.initials: X
authors.lastname: Li