title: InP nanocrystals on silicon for optoelectronic applications.
abstract: One of the solutions enabling performance progress, which can overcome the downsizing limit in silicon technology, is the integration of different functional optoelectronic devices within a single chip. Silicon with its indirect band gap has poor optical properties, which is its main drawback. Therefore, a different material has to be used for the on-chip optical interconnections, e.g. a direct band gap III-V compound semiconductor material. In the paper we present the synthesis of single crystalline InP nanodots (NDs) on silicon using combined ion implantation and millisecond flash lamp annealing techniques. The optical and microstructural investigations reveal the growth of high-quality (100)-oriented InP nanocrystals. The current-voltage measurements confirm the formation of an n-p heterojunction between the InP NDs and silicon. The main advantage of our method is its integration with large-scale silicon technology, which allows applying it for Si-based optoelectronic devices.
authors.affiliation: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany. s.prucnal@hzdr.de
authors.forename: Slawomir
authors.initials: S
authors.lastname: Prucnal
authors.forename: Shengqiang
authors.initials: S
authors.lastname: Zhou
authors.forename: Xin
authors.initials: X
authors.lastname: Ou
authors.forename: Helfried
authors.initials: H
authors.lastname: Reuther
authors.forename: Maciej Oskar
authors.initials: MO
authors.lastname: Liedke
authors.forename: Arndt
authors.initials: A
authors.lastname: Mücklich
authors.forename: Manfred
authors.initials: M
authors.lastname: Helm
authors.forename: Jerzy
authors.initials: J
authors.lastname: Zuk
authors.forename: Marcin
authors.initials: M
authors.lastname: Turek
authors.forename: Krzysztof
authors.initials: K
authors.lastname: Pyszniak
authors.forename: Wolfgang
authors.initials: W
authors.lastname: Skorupa