title: Absolute determination of charge-coupled device quantum detection efficiency using Si K-edge x-ray absorption fine structure.
abstract: We report a method to determine the quantum detection efficiency and the absorbing layers on a front-illuminated charge-coupled device (CCD). The CCD under study, as part of a crystal spectrometer, measures intense continuum x-ray emission from a picosecond laser-produced plasma and spectrally resolves the Si K-edge x-ray absorption fine structure due to the electrode structure of the device. The CCD response across the Si K-edge shows a large discontinuity as well as a number of oscillations that are identified individually and uniquely from Si, SiO(2), and Si(3)N(4) layers. From the spectral analysis of the structure and K-edge discontinuity, the active layer thickness and the different absorbing layers thickness can be determined precisely. A precise CCD detection model from 0.2 to 10 keV can be deduced from this highly sensitive technique.
authors.affiliation: Lawrence Livermore National Laboratory, P.O. Box 808, Livermore, California 94550, USA. dunn6@llnl.gov
authors.forename: J
authors.initials: J
authors.lastname: Dunn
authors.forename: A B
authors.initials: AB
authors.lastname: Steel