title: Reflection-based near-field ellipsometry for thin film characterization.
abstract: This paper presents a near-field ellipsometry method for nano-scale thin film characterization. The method is based on a reflection configuration of near-field optical detection. In the method, a new set of ellipsometry equations is established by taking into consideration the near-field sample-probe interaction and the topography of the thin film. Experimental and simulation results have shown that the proposed near-field ellipsometry is able to attain precise thin film characterization with nano-scale lateral resolution.
authors.affiliation: Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, Singapore 638075, Singapore.
authors.forename: Zhuang
authors.initials: Z
authors.lastname: Liu
authors.forename: Ying
authors.initials: Y
authors.lastname: Zhang
authors.forename: Shaw Wei
authors.initials: SW
authors.lastname: Kok
authors.forename: Boon Ping
authors.initials: BP
authors.lastname: Ng
authors.forename: Yeng Chai
authors.initials: YC
authors.lastname: Soh
mesh_terms: D049329:Nanostructures / Q000648:ultrastructure*; D019265:Spectroscopy, Near-Infrared / Q000379:methods*