title: Substituent variation drives metal/monolayer/semiconductor junctions from strongly rectifying to ohmic behavior.
abstract: An eight-orders of magnitude enhancement in current across Hg/X-styrene-Si junctions is caused by merely altering a substituent, X. Interface states are passivated and, depending on X, the Si Schottky junction encompasses the full range from Ohmic to strongly rectifying. This powerful electrostatic molecular effect has immediate implications for interface band alignment and sensing.
authors.affiliation: Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot, Israel.
authors.forename: Abd-Elrazek
authors.initials: AE
authors.lastname: Haj-Yahia
authors.forename: Omer
authors.initials: O
authors.lastname: Yaffe
authors.forename: Tatyana
authors.initials: T
authors.lastname: Bendikov
authors.forename: Hagai
authors.initials: H
authors.lastname: Cohen
authors.forename: Yishay
authors.initials: Y
authors.lastname: Feldman
authors.forename: Ayelet
authors.initials: A
authors.lastname: Vilan
authors.forename: David
authors.initials: D
authors.lastname: Cahen
mesh_terms: D017097:Electric Impedance; D004566:Electrodes; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008422:Materials Testing; D008628:Mercury / Q000737:chemistry*; D012666:Semiconductors; D013343:Styrenes / Q000737:chemistry*
chemical_list: D013343:Styrenes; D008628:Mercury