title: Passively mode-locked Yb3+:Sc2SiO5 thin-disk laser.
abstract: Experimental investigations on a passively mode-locked Yb(3+):Sc(2)SiO(5) (Yb:SSO) thin-disk laser are presented. The mode-locking was performed with a commercially available semiconductor saturable absorber mirror. The laser was operated at a repetition rate of 27 MHz and generated a maximum average output power of 27.8 W with a pulse duration of 298 fs. The spectrum was centered at 1036 nm. The beam was measured to be close to diffraction limited (M(2)<1.1). The promising results confirm the suitability of Yb:SSO for mode-locked thin-disk laser oscillators and indicate that this comparably new material deserves further attention by optimizing the crystal quality (growth and polishing) and doping levels for further power scaling.
authors.affiliation: Graduate School of Excellence, University of Stuttgart, Nobelstrasse 12, Stuttgart 70569, Germany. Katrin.Wentsch@ifsw.uni‑stuttgart.de
authors.forename: Katrin Sarah
authors.initials: KS
authors.lastname: Wentsch
authors.forename: Lihe
authors.initials: L
authors.lastname: Zheng
authors.forename: Jun
authors.initials: J
authors.lastname: Xu
authors.forename: Marwan Abdou
authors.initials: MA
authors.lastname: Ahmed
authors.forename: Thomas
authors.initials: T
authors.lastname: Graf
mesh_terms: D053844:Lasers, Solid-State; D013057:Spectrum Analysis