title: Using carrier-depletion silicon modulators for optical power monitoring.
abstract: Defect-mediated subbandgap absorption is observed in ion-implanted silicon-on-oxide waveguides that experience a rapid thermal annealing at 1075°C. With this effect, general carrier-depletion silicon modulators exhibit the capability of optical power monitoring. Responsivity is measured to be 22 mA/W for a 3 mm long Mach-Zehnder modulator of 2×10(18) cm(-3) doping concentration at -7.1 V bias voltage and 5.9 mA/W for a ring modulator of 1×10(18) cm(-3) doping concentration at -10 V bias voltage. The former is used to demonstrate data detection of up to 35 Gbits/s.
authors.affiliation: Photonics Research Group, Department of Information Technology, Ghent University-imec, Center for Nano- and Biophotonics (NB Photonics), St.-Pietersnieuwstraat 41, Gent 9000, Belgium. hyu@intec.ugent.be
authors.forename: Hui
authors.initials: H
authors.lastname: Yu
authors.forename: Dietmar
authors.initials: D
authors.lastname: Korn
authors.forename: Marianna
authors.initials: M
authors.lastname: Pantouvaki
authors.forename: Joris
authors.initials: J
authors.lastname: Van Campenhout
authors.forename: Katarzyna
authors.initials: K
authors.lastname: Komorowska
authors.forename: Peter
authors.initials: P
authors.lastname: Verheyen
authors.forename: Guy
authors.initials: G
authors.lastname: Lepage
authors.forename: Philippe
authors.initials: P
authors.lastname: Absil
authors.forename: David
authors.initials: D
authors.lastname: Hillerkuss
authors.forename: Luca
authors.initials: L
authors.lastname: Alloatti
authors.forename: Juerg
authors.initials: J
authors.lastname: Leuthold
authors.forename: Roel
authors.initials: R
authors.lastname: Baets
authors.forename: Wim
authors.initials: W
authors.lastname: Bogaerts