title: Thin-film transistors with a graphene oxide nanocomposite channel.
abstract: Graphene oxide (GO) and graphene oxide-zinc oxide nanocomposites (GO-ZnO) were used as channel materials on SiO(2)/Si to fabricate thin-film transistors (TFT) with an aluminum source and drain. Pure GO-based TFT showed poor field-effect characteristics. However, GO-ZnO-nanocomposite-based TFT showed better field-effect performance because of the anchoring of ZnO nanostructures in the GO matrix, which causes a partial reduction in GO as is found from X-ray photoelectron spectroscopic data. The field-effect mobility of charge carriers at a drain voltage of 1 V was found to be 1.94 cm(2)/(V s). The transport of charge carriers in GO-ZnO was explained by a fluctuation-induced tunneling mechanism.
authors.affiliation: Materials Science Centre, Indian Institute of Technology, Kharagpur 721302, India.
authors.forename: S Mahaboob
authors.initials: SM
authors.lastname: Jilani
authors.forename: Tanesh D
authors.initials: TD
authors.lastname: Gamot
authors.forename: P
authors.initials: P
authors.lastname: Banerji