title: Nano-Newton transverse force sensor using a vertical GaN nanowire based on the piezotronic effect.
authors.affiliation: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA.
authors.forename: Yu Sheng
authors.initials: YS
authors.lastname: Zhou
authors.forename: Ronan
authors.initials: R
authors.lastname: Hinchet
authors.forename: Ya
authors.initials: Y
authors.lastname: Yang
authors.forename: Gustavo
authors.initials: G
authors.lastname: Ardila
authors.forename: Rudeesun
authors.initials: R
authors.lastname: Songmuang
authors.forename: Fang
authors.initials: F
authors.lastname: Zhang
authors.forename: Yan
authors.initials: Y
authors.lastname: Zhang
authors.forename: Weihua
authors.initials: W
authors.lastname: Han
authors.forename: Ken
authors.initials: K
authors.lastname: Pradel
authors.forename: Laurent
authors.initials: L
authors.lastname: Montès
authors.forename: Mireille
authors.initials: M
authors.lastname: Mouis
authors.forename: Zhong Lin
authors.initials: ZL
authors.lastname: Wang
mesh_terms: D005708:Gallium / Q000737:chemistry*; D018625:Microscopy, Atomic Force; D053770:Nanowires / Q000737:chemistry* / Q000648:ultrastructure; D012825:Silicon / Q000737:chemistry; D012834:Silver / Q000737:chemistry
chemical_list: D012834:Silver; D005708:Gallium; C027235:gallium nitrate; D012825:Silicon