title: Memory devices using a mixture of MoS₂ and graphene oxide as the active layer.
abstract: A mixed film consisting of 2D MoS₂ and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS₂ component in the MoS₂-GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS₂-GO film-based device exhibits rewritable, nonvolatile, electrical bistable switching with low switching voltage (≤ 1.5 V) and high ON/OFF current ratio (≈ 10²).
authors.affiliation: School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.
authors.forename: Zongyou
authors.initials: Z
authors.lastname: Yin
authors.forename: Zhiyuan
authors.initials: Z
authors.lastname: Zeng
authors.forename: Juqing
authors.initials: J
authors.lastname: Liu
authors.forename: Qiyuan
authors.initials: Q
authors.lastname: He
authors.forename: Peng
authors.initials: P
authors.lastname: Chen
authors.forename: Hua
authors.initials: H
authors.lastname: Zhang