title: Transparent high-performance thin film transistors from solution-processed SnO2 /ZrO2 gel-like precursors.
abstract: This work employs novel SnO(2) gel-like precursors in conjunction with sol-gel deposited ZrO(2) gate dielectrics to realize high-performance transparent transistors. Representative devices show excellent performance and transparency, and deliver mobility of 103 cm(2) V(-1) s(-1) in saturation at operation voltages as low as 2 V, a sub-threshold swing of only 0.3 V/decade, and /(on) //(off) of 10(4) ~10(5) .
authors.affiliation: Department of Electrical Engineering and Computer Sciences, University of California-Berkeley, CA 94720-1770, USA.
authors.forename: Jaewon
authors.initials: J
authors.lastname: Jang
authors.forename: Rungrot
authors.initials: R
authors.lastname: Kitsomboonloha
authors.forename: Sarah L
authors.initials: SL
authors.lastname: Swisher
authors.forename: Eung Seok
authors.initials: ES
authors.lastname: Park
authors.forename: Hongki
authors.initials: H
authors.lastname: Kang
authors.forename: Vivek
authors.initials: V
authors.lastname: Subramanian
mesh_terms: D004560:Electricity; D005782:Gels; D010316:Particle Size; D017971:Tin Compounds / Q000737:chemistry*; D014173:Transistors, Electronic; D015040:Zirconium / Q000737:chemistry*
chemical_list: D005782:Gels; D017971:Tin Compounds; D015040:Zirconium; C045358:stannic oxide; C028541:zirconium oxide