title: Dislocation reduction of InAs nanofins prepared on Si substrate using metal-organic vapor-phase epitaxy.
abstract: InAs nanofins were prepared on a nanopatterned Si (001) substrate by metal-organic vapor-phase epitaxy. The threading dislocations, stacked on the lowest-energy-facet plane {111}, move along the SiO2 walls, resulting in a dislocation reduction, as confirmed by transmission electron microscopy. The dislocations were trapped within a thin InAs epilayer. The obtained 90-nm-wide InAs nanofins with an almost etching-pit-free surface do not require complex intermediate-layer epitaxial growth processes and large thickness typically required for conventional epitaxial growth.
authors.affiliation: Department of Electrical Engineering & Advanced Optoelectronic Technology Center, Institute of Microelectronics, National Cheng Kung University, 1 University Rd, Tainan City, 701, Taiwan. q1897124@mail.ncku.edu.tw.
authors.forename: Chao-Wei
authors.initials: CW
authors.lastname: Hsu
authors.forename: Yung-Feng
authors.initials: YF
authors.lastname: Chen
authors.forename: Yan-Kuin
authors.initials: YK
authors.lastname: Su