title: In situ-grown hexagonal silicon nanocrystals in silicon carbide-based films.
abstract: Silicon nanocrystals (Si-NCs) were grown in situ in carbide-based film using a plasma-enhanced chemical vapor deposition method. High-resolution transmission electron microscopy indicates that these nanocrystallites were embedded in an amorphous silicon carbide-based matrix. Electron diffraction pattern analyses revealed that the crystallites have a hexagonal-wurtzite silicon phase structure. The peak position of the photoluminescence can be controlled within a wavelength of 500 to 650 nm by adjusting the flow rate of the silane gas. We suggest that this phenomenon is attributed to the quantum confinement effect of hexagonal Si-NCs in silicon carbide-based film with a change in the sizes and emission states of the NCs.
authors.affiliation: Convergence Components and Materials Laboratory, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700, Republic of Korea. youby@etri.re.kr.
authors.forename: Tae-Youb
authors.initials: TY
authors.lastname: Kim
authors.forename: Chul
authors.initials: C
authors.lastname: Huh
authors.forename: Nae-Man
authors.initials: NM
authors.lastname: Park
authors.forename: Cheol-Jong
authors.initials: CJ
authors.lastname: Choi
authors.forename: Maki
authors.initials: M
authors.lastname: Suemitsu