title: Nanoplasmonic terahertz photoconductive switch on GaAs.
abstract: Low-temperature (LT) grown GaAs has a subpicosecond carrier response time that makes it favorable for terahertz photoconductive (PC) switching. However, this is obtained at the price of lower mobility and lower thermal conductivity than GaAs. Here we demonstrate subpicosecond carrier sweep-out and over an order of magnitude higher sensitivity in detection from a GaAs-based PC switch by using a nanoplasmonic structure. As compared to a conventional GaAs PC switch, we observe 40 times the peak-to-peak response from the nanoplasmonic structure on GaAs. The response is double that of a commercial, antireflection coated LT-GaAs PC switch.
authors.affiliation: Department of Electrical and Computer Engineering, University of Victoria, V8P 5C2, Victoria, BC Canada.
authors.forename: Barmak
authors.initials: B
authors.lastname: Heshmat
authors.forename: Hamid
authors.initials: H
authors.lastname: Pahlevaninezhad
authors.forename: Yuanjie
authors.initials: Y
authors.lastname: Pang
authors.forename: Mostafa
authors.initials: M
authors.lastname: Masnadi-Shirazi
authors.forename: Ryan
authors.initials: R
authors.lastname: Burton Lewis
authors.forename: Thomas
authors.initials: T
authors.lastname: Tiedje
authors.forename: Reuven
authors.initials: R
authors.lastname: Gordon
authors.forename: Thomas Edward
authors.initials: TE
authors.lastname: Darcie