title: Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy.
abstract: In this work, we present an experimental procedure to measure the composition distribution within inhomogeneous SiGe nanostructures. The method is based on the Raman spectra of the nanostructures, quantitatively analyzed through the knowledge of the scattering efficiency of SiGe as a function of composition and excitation wavelength. The accuracy of the method and its limitations are evidenced through the analysis of a multilayer and of self-assembled islands.
authors.affiliation: L-NESS, Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, via Cozzi 53, Milan 20125, Italy. emiliano.bonera@unimib.it.
authors.forename: Andrea
authors.initials: A
authors.lastname: Picco
authors.forename: Emiliano
authors.initials: E
authors.lastname: Bonera
authors.forename: Fabio
authors.initials: F
authors.lastname: Pezzoli
authors.forename: Emanuele
authors.initials: E
authors.lastname: Grilli
authors.forename: Oliver G
authors.initials: OG
authors.lastname: Schmidt
authors.forename: Fabio
authors.initials: F
authors.lastname: Isa
authors.forename: Stefano
authors.initials: S
authors.lastname: Cecchi
authors.forename: Mario
authors.initials: M
authors.lastname: Guzzi