title: Theoretical and experimental studies of (In,Ga)As/GaP quantum dots.
abstract: (In,Ga)As/GaP(001) quantum dots (QDs) are grown by molecular beam epitaxy and studied both theoretically and experimentally. The electronic band structure is simulated using a combination of k·p and tight-binding models. These calculations predict an indirect to direct crossover with the In content and the size of the QDs. The optical properties are then studied in a low-In-content range through photoluminescence and time-resolved photoluminescence experiments. It suggests the proximity of two optical transitions of indirect and direct types.
authors.affiliation: Université Européenne de Bretagne, INSA Rennes, France CNRS, UMR 6082 Foton-Ohm, 20 Avenue des Buttes de Coësmes, Rennes, 35708, France. cedric.robert@insa.rennes.fr.
authors.forename: Cedric
authors.initials: C
authors.lastname: Robert
authors.forename: Tra Nguyen
authors.initials: TN
authors.lastname: Thanh
authors.forename: Charles
authors.initials: C
authors.lastname: Cornet
authors.forename: Pascal
authors.initials: P
authors.lastname: Turban
authors.forename: Mathieu
authors.initials: M
authors.lastname: Perrin
authors.forename: Andrea
authors.initials: A
authors.lastname: Balocchi
authors.forename: Herve
authors.initials: H
authors.lastname: Folliot
authors.forename: Nicolas
authors.initials: N
authors.lastname: Bertru
authors.forename: Laurent
authors.initials: L
authors.lastname: Pedesseau
authors.forename: Mikhail O
authors.initials: MO
authors.lastname: Nestoklon
authors.forename: Jacky
authors.initials: J
authors.lastname: Even
authors.forename: Jean-Marc
authors.initials: JM
authors.lastname: Jancu
authors.forename: Sylvain
authors.initials: S
authors.lastname: Tricot
authors.forename: Olivier
authors.initials: O
authors.lastname: Durand
authors.forename: Xavier
authors.initials: X
authors.lastname: Marie
authors.forename: Alain
authors.initials: A
authors.lastname: Le Corre