title: Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells.
abstract: We report the development of complete structural AlGaN-based deep-ultraviolet light-emitting diodes with an aluminum thin layer for increasing light extraction efficiency. A 217% enhancement in peak photoluminescence intensity at 294 nm is observed. Cathodoluminescence measurement demonstrates that the internal quantum efficiency of the deep-UV LEDs coated with Al layer is not enhanced. The emission enhancement of deep-UV LEDs is attributed to the higher LEE by the surface plasmon-transverse magnetic wave coupling. When the proportion of the TM wave to the Al layer increases with the Al content in the Al(x)Ga(1-x)N multiple quantum wells, i.e., the band edge emission energy, the enhancement ratio of the Al-coated deep-UV LEDs increases.
authors.affiliation: Department of Physics, Fujian Provincial Key Laboratory of Semiconductor Materials and Application, Xiamen University, Xiamen 361005, China.
authors.forename: Na
authors.initials: N
authors.lastname: Gao
authors.forename: Kai
authors.initials: K
authors.lastname: Huang
authors.forename: Jinchai
authors.initials: J
authors.lastname: Li
authors.forename: Shuping
authors.initials: S
authors.lastname: Li
authors.forename: Xu
authors.initials: X
authors.lastname: Yang
authors.forename: Junyong
authors.initials: J
authors.lastname: Kang