title: Direct writing of electronic devices on graphene oxide by catalytic scanning probe lithography.
abstract: Reduction of graphene oxide at the nanoscale is an attractive approach to graphene-based electronics. Here we use a platinum-coated atomic force microscope tip to locally catalyse the reduction of insulating graphene oxide in the presence of hydrogen. Nanoribbons with widths ranging from 20 to 80 nm and conductivities of >10(4) S m(-1) are successfully generated, and a field effect transistor is produced. The method involves mild operating conditions, and uses arbitrary substrates, atmospheric pressure and low temperatures (≤115 °C).
authors.affiliation: Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China.
authors.forename: Kun
authors.initials: K
authors.lastname: Zhang
authors.forename: Qiang
authors.initials: Q
authors.lastname: Fu
authors.forename: Nan
authors.initials: N
authors.lastname: Pan
authors.forename: Xinxin
authors.initials: X
authors.lastname: Yu
authors.forename: Jinyang
authors.initials: J
authors.lastname: Liu
authors.forename: Yi
authors.initials: Y
authors.lastname: Luo
authors.forename: Xiaoping
authors.initials: X
authors.lastname: Wang
authors.forename: Jinlong
authors.initials: J
authors.lastname: Yang
authors.forename: Jianguo
authors.initials: J
authors.lastname: Hou