title: Two-stage metal-catalyst-free growth of high-quality polycrystalline graphene films on silicon nitride substrates.
abstract: By using two-stage, metal-catalyst-free chemical vapor deposition (CVD), it is demonstrated that high-quality polycrystalline graphene films can directly grow on silicon nitride substrates. The carrier mobility can reach about 1500 cm(2)  V(-1)  s(-1) , which is about three times the value of those grown on SiO(2) /Si substrates, and also is better than some examples of metal-catalyzed graphene, reflecting the good quality of the graphene lattice.
authors.affiliation: Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, P. R. China.
authors.forename: Jianyi
authors.initials: J
authors.lastname: Chen
authors.forename: Yunlong
authors.initials: Y
authors.lastname: Guo
authors.forename: Yugeng
authors.initials: Y
authors.lastname: Wen
authors.forename: Liping
authors.initials: L
authors.lastname: Huang
authors.forename: Yunzhou
authors.initials: Y
authors.lastname: Xue
authors.forename: Dechao
authors.initials: D
authors.lastname: Geng
authors.forename: Bin
authors.initials: B
authors.lastname: Wu
authors.forename: Birong
authors.initials: B
authors.lastname: Luo
authors.forename: Gui
authors.initials: G
authors.lastname: Yu
authors.forename: Yunqi
authors.initials: Y
authors.lastname: Liu