title: Improvement of light extraction efficiency of GaN-based light-emitting diodes using Ag nanostructure and indium tin oxide grating.
abstract: Based on the analysis of the evanescent wave from total internal reflection, a light-emitting diode (LED) structure with a plasmonic Ag nanostructure and indium tin oxide (ITO) grating was proposed to enhance the extraction efficiency. The two-dimensional finite-difference time-domain method was used to study the spectral properties of the hybrid structure and the effects of structure parameters on extraction enhancement. The results demonstrate that the plasmonic Ag nanostructure can couple the evanescent wave to a propagation wave around the GaN/ITO interface, and then the photons are scattered out of the LED chips by the ITO grating with high extraction efficiency. Under the optimal parameters, the light extraction efficiency can reach approximately three times the original value at a relatively longer wavelength.
authors.affiliation: Interface Science and Engineering in Advanced Materials of Taiyuan University of Technology, Ministry of Education, College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, China.
authors.forename: Suihu
authors.initials: S
authors.lastname: Dang
authors.forename: Chunxia
authors.initials: C
authors.lastname: Li
authors.forename: Wei
authors.initials: W
authors.lastname: Jia
authors.forename: Zhuxia
authors.initials: Z
authors.lastname: Zhang
authors.forename: Tianbao
authors.initials: T
authors.lastname: Li
authors.forename: Peide
authors.initials: P
authors.lastname: Han
authors.forename: Bingshe
authors.initials: B
authors.lastname: Xu
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D008029:Lighting / Q000295:instrumentation*; D053768:Metal Nanoparticles / Q000737:chemistry* / Q000648:ultrastructure; D012031:Refractometry / Q000295:instrumentation*; D012666:Semiconductors; D012834:Silver / Q000737:chemistry*; D017971:Tin Compounds / Q000737:chemistry*
chemical_list: D017971:Tin Compounds; C473348:gallium nitride; D012834:Silver; C109984:indium tin oxide; D005708:Gallium