title: In situ nitrogen-doped graphene grown from polydimethylsiloxane by plasma enhanced chemical vapor deposition.
abstract: Due to its unique electronic properties and wide spectrum of promising applications, graphene has attracted much attention from scientists in various fields. Control and engineering of graphene's semiconducting properties is considered to be key to its applications in electronic devices. Here, we report a novel method to prepare in situ nitrogen-doped graphene by microwave plasma assisted chemical vapor deposition (CVD) using PDMS (polydimethylsiloxane) as a solid carbon source. Based on this approach, the concentration of nitrogen-doping can be easily controlled via the flow rate of nitrogen during the CVD process. X-ray photoelectron spectroscopy results indicated that the nitrogen atoms doped into the graphene lattice were mainly in the forms of pyridinic and pyrrolic structures. Moreover, first-principles calculations show that the incorporated nitrogen atoms can lead to p-type doping of graphene. This in situ approach provides a promising strategy to prepare graphene with controlled electronic properties.
authors.affiliation: Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China.
authors.forename: Chundong
authors.initials: C
authors.lastname: Wang
authors.forename: Yungang
authors.initials: Y
authors.lastname: Zhou
authors.forename: Lifang
authors.initials: L
authors.lastname: He
authors.forename: Tsz-Wai
authors.initials: TW
authors.lastname: Ng
authors.forename: Guo
authors.initials: G
authors.lastname: Hong
authors.forename: Qi-Hui
authors.initials: QH
authors.lastname: Wu
authors.forename: Fei
authors.initials: F
authors.lastname: Gao
authors.forename: Chun-Sing
authors.initials: CS
authors.lastname: Lee
authors.forename: Wenjun
authors.initials: W
authors.lastname: Zhang