title: Ion-irradiation-induced defects in isotopically-labeled two layered graphene: enhanced in-situ annealing of the damage.
abstract: Contrary to theoretical estimates based on the conventional binary collision model, experimental results indicate that the number of defects in the lower layer of the bi-layer graphene sample is smaller than in the upper layer. This observation is explained by in situ self-annealing of the defects.
authors.affiliation: J. Heyrovský Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, v.v.i., Dolejškova 3, Prague 8, Czech Republic. martin.kalbac@jh-inst.cas.cz
authors.forename: Martin
authors.initials: M
authors.lastname: Kalbac
authors.forename: Ossi
authors.initials: O
authors.lastname: Lehtinen
authors.forename: Arkady V
authors.initials: AV
authors.lastname: Krasheninnikov
authors.forename: Juhani
authors.initials: J
authors.lastname: Keinonen
mesh_terms: D001128:Argon / Q000737:chemistry; D002247:Carbon Isotopes / Q000737:chemistry; D006108:Graphite / Q000737:chemistry*; D007477:Ions / Q000737:chemistry; D007553:Isotope Labeling; D012822:Silicon Dioxide / Q000737:chemistry; D013059:Spectrum Analysis, Raman
chemical_list: D002247:Carbon Isotopes; D007477:Ions; D001128:Argon; D012822:Silicon Dioxide; D006108:Graphite