title: Nonvolatile memory devices prepared from sol-gel derived niobium pentoxide films.
abstract: We report on the resistive switching nonvolatile memory (RSNM) properties of niobium pentoxide (Nb(2)O(5)) films prepared using sol-gel chemistry. A sol-gel derived solution of niobium ethoxide, a precursor to Nb(2)O(5), was spin-coated on to a platinum (Pt)-coated silicon substrate, and was then annealed at approximately 620 and 450 °C to form a Nb(2)O(5) film of polycrystalline and amorphous structure, respectively. A top electrode consisting of Ag, W, Au, or Pt was then coated onto the Nb(2)O(5) films to complete the fabrication. After a forming process of limited current compliance up to 10 mA, known as "electroforming", a resistive switching phenomenon, independent of voltage polarity (unipolar switching), was observed at low operating voltages (0.59 ± 0.05 V(RESET) and 1.03 ± 0.06 V(SET)) with a high ON/OFF current ratio above 10(8). The reported approach offers opportunities for preparing Nb(2)O(5)-based resistive switching memory devices from solution process.
authors.affiliation: Department of Chemical & Biological Engineering, Korea University, Anam-dong, Seongbuk-gu, Seoul 136-713, South Korea.
authors.forename: Hyunhee
authors.initials: H
authors.lastname: Baek
authors.forename: Chanwoo
authors.initials: C
authors.lastname: Lee
authors.forename: Jungkyu
authors.initials: J
authors.lastname: Choi
authors.forename: Jinhan
authors.initials: J
authors.lastname: Cho