title: Electroluminescence from ZnO-nanofilm/Si-micropillar heterostructure arrays.
abstract: ZnO-nanofilm/Si-micropillar p-n nanoheterostructure arrays were prepared by growing n-type ZnO onto a p-type nanoporous Si pillar array. Its current-voltage characteristics of nanoheterostructure showed good rectifying behavior with onset voltage of ~1.5 V, forward current density of ~28.7 mA/cm(2) at 2.5 V, leakage current density of ~0.15 mA/cm(2) and rectifying ratio of ~121 at ± 2.5 V. The electron transport across nanohetreostructure obeys the trap-charge-limit current model. Moreover, strong white light electroluminescence from ZnO-nanofilm/Si-micropillar light-emitting diode (LED) has been achieved, which could open up possibilities to build new ZnO/Si-based highly efficient solid-state lighting devices.
authors.affiliation: State Key Laboratory of Chemical Resource Engineering and School of Science, Beijing University of Chemical Technology, Beijing 100029, China.
authors.forename: Yu Fei
authors.initials: YF
authors.lastname: Chan
authors.forename: Wei
authors.initials: W
authors.lastname: Su
authors.forename: Chang Xing
authors.initials: CX
authors.lastname: Zhang
authors.forename: Zheng Long
authors.initials: ZL
authors.lastname: Wu
authors.forename: Ying
authors.initials: Y
authors.lastname: Tang
authors.forename: Xiao Qi
authors.initials: XQ
authors.lastname: Sun
authors.forename: Hai Jun
authors.initials: HJ
authors.lastname: Xu