title: Triggered indistinguishable single photons with narrow line widths from site-controlled quantum dots.
abstract: In this Letter, we present narrow line width (7 μeV), nearly background-free single-photon emission (g((2))(0) = 0.02) and highly indistinguishable photons (V = 0.73) from site-controlled In(Ga)As/GaAs quantum dots. These excellent properties have been achieved by combining overgrowth on ex situ pit-patterned substrates with vertical stacking of spectrally distinct quantum dot layers. Our study paves the way for large-scale integration of quantum dots into quantum photonic circuits as indistinguishable single-photon sources.
authors.affiliation: Institut für Halbleiteroptik und Funktionelle Grenzflächen and Research Center SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany. k.joens@ihfg.uni-stuttgart.de
authors.forename: K D
authors.initials: KD
authors.lastname: Jöns
authors.forename: P
authors.initials: P
authors.lastname: Atkinson
authors.forename: M
authors.initials: M
authors.lastname: Müller
authors.forename: M
authors.initials: M
authors.lastname: Heldmaier
authors.forename: S M
authors.initials: SM
authors.lastname: Ulrich
authors.forename: O G
authors.initials: OG
authors.lastname: Schmidt
authors.forename: P
authors.initials: P
authors.lastname: Michler