title: Temperature stable 1.3 μm emission from GaAs.
abstract: Gallium arsenide has outstanding performance in optical communication devices for light source purposes. Different approaches have been done to realize the luminescence from GaAs matching the transmission window of optical fibers. Here we present the realization of quasi- temperature independent photoluminescence at around 1.3 μm from millisecond-range thermally treated GaAs. It is shown that the V(As) donor and X acceptor pairs are responsible for the 1.3 μm emission. The influence of the flash-lamp-annealing on the donor-acceptor pair (DAP) formation in the nitrogen and manganese doped and un-doped semi-insulating GaAs wafers were investigated. The concentration of DAP and the 1.3 μm emission can be easily tuned by controlling doping and annealing conditions.
authors.affiliation: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), P.O. Box 510119, 01314 Dresden, Germany. s.prucnal@hzdr.de
authors.forename: Slawomir
authors.initials: S
authors.lastname: Prucnal
authors.forename: Kun
authors.initials: K
authors.lastname: Gao
authors.forename: Wolfgang
authors.initials: W
authors.lastname: Anwand
authors.forename: Manfred
authors.initials: M
authors.lastname: Helm
authors.forename: Wolfgang
authors.initials: W
authors.lastname: Skorupa
authors.forename: Shengqiang
authors.initials: S
authors.lastname: Zhou