title: Flexoelectric rectification of charge transport in strain-graded dielectrics.
abstract: Flexoelectricity is emerging as a fascinating means for exploring the physical properties of nanoscale materials. Here, we demonstrated the unusual coupling between electronic transport and the mechanical strain gradient in a dielectric epitaxial thin film. Utilizing the nanoscale strain gradient, we showed the unique functionality of flexoelectricity to generate a rectifying diode effect. Furthermore, using conductive atomic force microscopy, we found that the flexoelectric effect can govern the local transport characteristics, including spatial conduction inhomogeneities, in thin-film epitaxy systems. Consideration of the flexoelectric effect will improve understanding of the charge conduction mechanism at the nanoscale and may facilitate the advancement of novel nanoelectronic device design.
authors.affiliation: IBS-Center for Functional Interfaces of Correlated Electron Systems, Seoul National University, Seoul 151-747, Korea.
authors.forename: Daesu
authors.initials: D
authors.lastname: Lee
authors.forename: Sang Mo
authors.initials: SM
authors.lastname: Yang
authors.forename: Jong-Gul
authors.initials: JG
authors.lastname: Yoon
authors.forename: Tae Won
authors.initials: TW
authors.lastname: Noh