title: K-shell spectroscopy of silicon ions as diagnostic for high electric fields.
abstract: We developed a detection scheme, capable of measuring X-ray line shape of tracer ions in μm thick layers at the rear side of a target foil irradiated by ultra intense laser pulses. We performed simulations of the effect of strong electric fields on the K-shell emission of silicon and developed a spectrometer dedicated to record this emission. The combination of a cylindrically bent crystal in von Hámos geometry and a CCD camera with its single photon counting capability allows for a high dynamic range of the instrument and background free spectra. This approach will be used in future experiments to study electric fields of the order of TV/m at high density plasmas close to solid density.
authors.affiliation: Helmholtz-Institut Jena, Helmholtzweg 4, D-07743 Jena, Germany. robert.loetzsch@uni-jena.de
authors.forename: R
authors.initials: R
authors.lastname: Loetzsch
authors.forename: O
authors.initials: O
authors.lastname: Jäckel
authors.forename: S
authors.initials: S
authors.lastname: Höfer
authors.forename: T
authors.initials: T
authors.lastname: Kämpfer
authors.forename: J
authors.initials: J
authors.lastname: Polz
authors.forename: I
authors.initials: I
authors.lastname: Uschmann
authors.forename: M C
authors.initials: MC
authors.lastname: Kaluza
authors.forename: E
authors.initials: E
authors.lastname: Förster
authors.forename: E
authors.initials: E
authors.lastname: Stambulchik
authors.forename: E
authors.initials: E
authors.lastname: Kroupp
authors.forename: Y
authors.initials: Y
authors.lastname: Maron