title: Internal photoemission-based photodetector on Si microring resonator.
abstract: We propose a photodetector (PD) based on the internal photoemission effect over a Schottky barrier on a CMOS-compatible Si microring resonator for 1.55 μm. To analyze the device, we model the microring waveguide partially covered by a metal/silicide nanolayer, using the Z-transform method. The proposed structure benefits from the resonant-cavity-enhanced (RCE) waveguide PDs enjoying high efficiency and wavelength selectivity. Simulations show that the maximum value of the bandwidth-efficiency product for the proposed structure is in the order of 10 GHz, which is much higher than those reported for other RCE-based PDs.
authors.affiliation: Faculty of Electrical and Computer Engineering, Tarbiat Modares University, Tehran, Iran.
authors.forename: Aref Rasoulzadeh
authors.initials: AR
authors.lastname: Zali
authors.forename: Mohammad Kazem
authors.initials: MK
authors.lastname: Moravvej-Farshi
authors.forename: Gholamreza
authors.initials: G
authors.lastname: Abaeiani