title: High-performance transistors based on zinc tin oxides by single spin-coating process.
abstract: Films of zinc tin oxide (ZTO), grown from solutions with zinc acetate dehydrate and tin(II) 2-ethylhexanoate dissolved in 2-methoxyethanol, have been used to fabricate thin-film transistors in combination with solution-processed aluminum oxide as the gate insulator. And the nonhomogeneity of the single-layer ZTO films, caused by both ZTO film-substrate interaction and surface crystallization, has been studied, which is essential to achieve high performance transistors. In the bottom-contact thin-film transistor based on a Sn-rich layer of ZTO, a high mobility of 78.9 cm(2) V(-1) s(-1) in the saturation region has been obtained, with an on-to-off current ratio of 10(5) and a threshold gate voltage of 1.6 V.
authors.affiliation: Key Lab of Organic Optoelectronics & Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, PR China.
authors.forename: Yunlong
authors.initials: Y
authors.lastname: Zhao
authors.forename: Lian
authors.initials: L
authors.lastname: Duan
authors.forename: Guifang
authors.initials: G
authors.lastname: Dong
authors.forename: Deqiang
authors.initials: D
authors.lastname: Zhang
authors.forename: Juan
authors.initials: J
authors.lastname: Qiao
authors.forename: Liduo
authors.initials: L
authors.lastname: Wang
authors.forename: Yong
authors.initials: Y
authors.lastname: Qiu