title: Evidence of speckle in extreme-UV lithography.
abstract: Based on reflective optics at 13.5 nm, extreme-UV lithography is the ultimate top-down technique to define structures below 22 nm but faces several challenges arising from the discrete nature of light and matter. Owing to the short wavelength, mask surface roughness plays a fundamental role in the increase of speckle pattern contrast, compromising the uniformity of the printed features. Herein, we have used a mask with engineered gradient surface roughness to illustrate the impact that speckle has on the resulting photoresist pattern. The speckle increases the photoresist roughness, but surprisingly, only when the mask surface roughness is well above existing manufacturing capabilities.
authors.affiliation: IMEC, Kapeldreef 75, B-3001 Leuven, Belgium. vaglio@imec.be
authors.forename: Alessandro Vaglio
authors.initials: AV
authors.lastname: Pret
authors.forename: Roel
authors.initials: R
authors.lastname: Gronheid
authors.forename: Jan
authors.initials: J
authors.lastname: Engelen
authors.forename: Pei-Yang
authors.initials: PY
authors.lastname: Yan
authors.forename: Michael J
authors.initials: MJ
authors.lastname: Leeson
authors.forename: Todd R
authors.initials: TR
authors.lastname: Younkin