title: Direct observation of grain growth from molten silicon formed by micro-thermal-plasma-jet irradiation.
abstract: Phase transformation of amorphous-silicon during millisecond annealing using micro-thermal-plasma-jet irradiation was directly observed using a high-speed camera with microsecond time resolution. An oval-shaped molten-silicon region adjacent to the solid phase crystallization region was clearly observed, followed by lateral large grain growth perpendicular to a liquid-solid interface. Furthermore, leading wave crystallization (LWC), which showed intermittent explosive crystallization, was discovered in front of the moving molten region. The growth mechanism of LWC has been investigated on the basis of numerical simulation implementing explosive movement of a thin liquid layer driven by released latent heat diffusion in a lateral direction.
authors.affiliation: Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan.
authors.forename: Shohei
authors.initials: S
authors.lastname: Hayashi
authors.forename: Yuji
authors.initials: Y
authors.lastname: Fujita
authors.forename: Takahiro
authors.initials: T
authors.lastname: Kamikura
authors.forename: Kohei
authors.initials: K
authors.lastname: Sakaike
authors.forename: Muneki
authors.initials: M
authors.lastname: Akazawa
authors.forename: Mitsuhisa
authors.initials: M
authors.lastname: Ikeda
authors.forename: Hiroaki
authors.initials: H
authors.lastname: Hanafusa
authors.forename: Seiichiro
authors.initials: S
authors.lastname: Higashi