title: Near infrared enhancement in CIGS-based solar cells utilizing a ZnO:H window layer.
abstract: We investigated the near infrared enhancement in Cu(In,Ga)Se(2) (CIGS)- based solar cells utilizing a hydrogen-doping ZnO (ZnO:H) window layer. The results show that the carrier concentration of ZnO:H film is lower than that of AZO film which can increase the transmittance in the NIR. The advantage of ZnO:H film is higher Hall mobility than AZO film. Thus ZnO:H film has similar resistivity to AZO film. It was found that the cell efficiency was 12.4 and 13% for the AZO device and the ZnO:H device, respectively. The cell efficiency is enhanced by 4.8%. Furthermore, the results indicate that, the ZnO:H film is superior to the AZO film as the window layer for CIGS-based solar cells.
authors.affiliation: Department of Optics and Photonics, National Central University, Chung-Li, Taiwan.
authors.forename: Chi-Li
authors.initials: CL
authors.lastname: Yeh
authors.forename: Hung-Ru
authors.initials: HR
authors.lastname: Hsu
authors.forename: Sheng-Hui
authors.initials: SH
authors.lastname: Chen
authors.forename: Yung-Sheng
authors.initials: YS
authors.lastname: Liu