title: Improving CMOS-compatible Germanium photodetectors.
abstract: We report design improvements for evanescently coupled Germanium photodetectors grown at low temperature. The resulting photodetectors with 10 μm Ge length manufactured in a commercial CMOS process achieve >0.8 A/W responsivity over the entire C-band, with a device capacitance of <7 fF based on measured data.
authors.affiliation: Oracle Labs, Oracle, San Diego, California 92121, USA. glenn.li@oracle.com
authors.forename: Guoliang
authors.initials: G
authors.lastname: Li
authors.forename: Ying
authors.initials: Y
authors.lastname: Luo
authors.forename: Xuezhe
authors.initials: X
authors.lastname: Zheng
authors.forename: Gianlorenzo
authors.initials: G
authors.lastname: Masini
authors.forename: Attila
authors.initials: A
authors.lastname: Mekis
authors.forename: Subal
authors.initials: S
authors.lastname: Sahni
authors.forename: Hiren
authors.initials: H
authors.lastname: Thacker
authors.forename: Jin
authors.initials: J
authors.lastname: Yao
authors.forename: Ivan
authors.initials: I
authors.lastname: Shubin
authors.forename: Kannan
authors.initials: K
authors.lastname: Raj
authors.forename: John E
authors.initials: JE
authors.lastname: Cunningham
authors.forename: Ashok V
authors.initials: AV
authors.lastname: Krishnamoorthy
mesh_terms: D000669:Amplifiers, Electronic; D017076:Computer-Aided Design; D004867:Equipment Design; D005857:Germanium / Q000737:chemistry*; D006801:Humans; D008027:Light; D055096:Optical Devices; D012666:Semiconductors; D020349:Surface Plasmon Resonance / Q000295:instrumentation*
chemical_list: D005857:Germanium