title: A 25 Gbps silicon microring modulator based on an interleaved junction.
abstract: A silicon microring modulator utilizing an interleaved p-n junction phase shifter with a V(π)L of 0.76 V-cm and a minimum off-resonance insertion loss of less than 0.2 dB is demonstrated. The modulator operates at 25 Gbps at a drive voltage of 1.6 V and 2-3 dB excess optical insertion loss, conditions which correspond to a power consumption of 471 fJ/bit. Eye diagrams are characterized at up to 40 Gbps, and transmission is demonstrated across more than 10 km of single-mode fiber with minimal signal degradation.
authors.affiliation: IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA.
authors.forename: J C
authors.initials: JC
authors.lastname: Rosenberg
authors.forename: W M J
authors.initials: WM
authors.lastname: Green
authors.forename: S
authors.initials: S
authors.lastname: Assefa
authors.forename: D M
authors.initials: DM
authors.lastname: Gill
authors.forename: T
authors.initials: T
authors.lastname: Barwicz
authors.forename: M
authors.initials: M
authors.lastname: Yang
authors.forename: S M
authors.initials: SM
authors.lastname: Shank
authors.forename: Y A
authors.initials: YA
authors.lastname: Vlasov
mesh_terms: D016477:Artifacts; D017076:Computer-Aided Design; D004867:Equipment Design; D006801:Humans; D008904:Miniaturization; D055096:Optical Devices; D012666:Semiconductors; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D012825:Silicon; D013685:Telecommunications / Q000295:instrumentation*
chemical_list: D012825:Silicon