title: Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer.
abstract: Through the one-step plasma oxidation of TiN thin films at room temperature (a simple semiconductor technology compatible method), a partly oxidised structure of titanium oxynitride (TiN(x)O(y)) with a TiO(2-x) nanolayer on top has been prepared for non-volatile resistive switching memory devices. The fabricated Pt/TiO(2-x)/TiN(x)O(y)/TiN memory devices demonstrate complementary resistive switching behaviours within an operation voltage of 1 V. The complementary resistive switching behaviours can be explained by redistribution of the oxygen vacancies between the Pt/TiO(2-x) top interface and the TiO(2-x)/TiN(x)O(y) bottom interface in the TiO(2-x) nanolayer. A model concerning the resistive switching mechanism as well as a recover program of a failed device is also proposed. Our work provides a possible cost-efficient solution to suppress the sneak-path problem in nanoscale crossbar memory arrays.
authors.affiliation: Key Laboratory of Advanced Materials (MOE), Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, PR China.
authors.forename: Guangsheng
authors.initials: G
authors.lastname: Tang
authors.forename: Fei
authors.initials: F
authors.lastname: Zeng
authors.forename: Chao
authors.initials: C
authors.lastname: Chen
authors.forename: Hongyan
authors.initials: H
authors.lastname: Liu
authors.forename: Shuang
authors.initials: S
authors.lastname: Gao
authors.forename: Cheng
authors.initials: C
authors.lastname: Song
authors.forename: Yisong
authors.initials: Y
authors.lastname: Lin
authors.forename: Guang
authors.initials: G
authors.lastname: Chen
authors.forename: Feng
authors.initials: F
authors.lastname: Pan
mesh_terms: D016248:Computer Storage Devices; D003460:Crystallization / Q000379:methods*; D017097:Electric Impedance; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008422:Materials Testing; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010084:Oxidation-Reduction; D010316:Particle Size; D058626:Plasma Gases / Q000737:chemistry*; D012666:Semiconductors; D014025:Titanium / Q000737:chemistry*
chemical_list: D058626:Plasma Gases; C009495:titanium dioxide; D014025:Titanium