title: Photoluminescence efficiency droop and stimulated recombination in GaN epilayers.
abstract: The photoluminescence droop effect, i.e., the decrease in emission efficiency with increasing excitation intensity, is observed and studied in GaN epilayers with different carrier lifetimes. Spontaneous and stimulated emissions have been studied in the front-face and edge emission configurations. The onset of stimulated recombination occurs simultaneously with the droop onset in the front-face configuration and might be considered as an origin of the droop effect in GaN epilayers.
authors.affiliation: Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Lithuania, Saulėtekio al. 9 – III, Vilnius, LT-10222, Lithuania. juras.mickevicius@ff.vu.lt
authors.forename: Jūras
authors.initials: J
authors.lastname: Mickevičius
authors.forename: Jonas
authors.initials: J
authors.lastname: Jurkevičius
authors.forename: Michael S
authors.initials: MS
authors.lastname: Shur
authors.forename: Jinwei
authors.initials: J
authors.lastname: Yang
authors.forename: Remis
authors.initials: R
authors.lastname: Gaska
authors.forename: Gintautas
authors.initials: G
authors.lastname: Tamulaitis