title: Solid-solution semiconductor nanowires in pseudobinary systems.
abstract: Pseudobinary solid-solution semiconductor nanowires made of (GaP)(1-x)(ZnS)(x), (ZnS)(1-x)(GaP)(x) and (GaN)(1-x)(ZnO)(x) were synthesized based on an elaborative compositional, structural, and synthetic designs. Using analytical high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS), we confirmed that the structure uniformity and a lattice match between the two constituting binary components play the key roles in the formation of quaternary solid-solution nanostructures. Electrical transport measurements on individual GaP and (GaP)(1-x)(ZnS)(x) nanowires indicated that a slight invasion of ZnS in the GaP host could lead to the abrupt resistance increase, resulting in the semiconductor-to-insulator transition. The method proposed here may be extended to the rational synthesis of many other multicomponent nanosystems with tunable and intriguing optoelectronic properties for specific applications.
authors.affiliation: World Premier International (WPI) Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki, 305-0044 Japan. baodanliu@imr.ac.cn
authors.forename: Baodan
authors.initials: B
authors.lastname: Liu
authors.forename: Yoshio
authors.initials: Y
authors.lastname: Bando
authors.forename: Lizhao
authors.initials: L
authors.lastname: Liu
authors.forename: Jijun
authors.initials: J
authors.lastname: Zhao
authors.forename: Mitome
authors.initials: M
authors.lastname: Masanori
authors.forename: Xin
authors.initials: X
authors.lastname: Jiang
authors.forename: Dmitri
authors.initials: D
authors.lastname: Golberg