title: Effects of Sn doping on the morphology and properties of Fe-doped In2O3 epitaxial films.
abstract: (Sn, Fe)-codoped In2O3 epitaxial films were deposited on (111)-oriented Y-stabilized ZrO2 substrates by pulsed laser deposition with constant Fe concentration and different Sn concentrations. The influence of Sn concentration on the crystal structure and properties of Fe-doped In2O3 ferromagnetic semiconductor films has been investigated systematically. Experimental results indicate that Sn doping can effectively reduce the surface roughness and suppresses breakup of the films into separated islands. At the same time, the optical band gap increases and the electrical properties improve correspondingly. However, although the carrier density increases dramatically with the Sn doping, no obvious change of the ferromagnetism is observed. This is explained by a modified bounded magnetic polaron model.
authors.affiliation: School of Physics and State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People's Republic of China. cyx@sdu.edu.cn.
authors.forename: Tie
authors.initials: T
authors.lastname: Zhou
authors.forename: Lin
authors.initials: L
authors.lastname: Wei
authors.forename: Yanru
authors.initials: Y
authors.lastname: Xie
authors.forename: Qinghao
authors.initials: Q
authors.lastname: Li
authors.forename: Guoxiang
authors.initials: G
authors.lastname: Hu
authors.forename: Yanxue
authors.initials: Y
authors.lastname: Chen
authors.forename: Shishen
authors.initials: S
authors.lastname: Yan
authors.forename: Guolei
authors.initials: G
authors.lastname: Liu
authors.forename: Liangmo
authors.initials: L
authors.lastname: Mei
authors.forename: Jun
authors.initials: J
authors.lastname: Jiao