title: Positron annihilation on defects in silicon irradiated with 15 MeV protons.
abstract: Microstructure and thermal stability of the radiation defects in n-FZ-Si ([P] ≈ 7 × 10(15) cm(-3)) single crystals have been investigated. The radiation defects have been induced by irradiation with 15 MeV protons and studied by means of both the positron lifetime spectroscopy and low-temperature measurements of the Hall effect. At each step of the isochronal annealing over the temperature range ∼60-700 °C the positron lifetime has been measured for the temperature interval ∼30-300 K, and for samples-satellites the temperature dependences of the charge carriers and mobility have been determined over the range ∼4.2-300 K. It is argued that as-grown impurity centers influence the average positron lifetime by forming shallow (E(b) ≈ 0.013 eV) positron states. The radiation-induced defects were also found to trap positrons into weakly bound (E(b) ≤ 0.01 eV) states. These positron states are observed at cryogenic temperatures during the isochronal annealing up to T(anneal.) = 340 °C. The stages of annealing in the temperature intervals ∼60-180 °C and ∼180-260 °C reflect the disappearance of E-centers and divacancies, respectively. Besides these defects the positrons were found to be localized at deep donor centers hidden in the process of annealing up to the temperature T(anneal.) ≈ 300 °C. The annealing of the deep donors occurs over the temperature range ∼300-650 °C. At these centers positrons are estimated to be bound with energies E(b) ≈ 0.096 and 0.021 eV within the temperature intervals ∼200-270 K and ∼166-66 K, respectively. The positron trapping coefficient from these defects increases from ∼1.1 × 10(16) to ∼6.5 × 10(17) s(-1) over the temperature range ∼266-66 K, thus substantiating a cascade phonon-assisted positron trapping mechanism whose efficiency is described by ≈T(-3) law. It is argued that the value of activation energy of the isochronal annealing E(a) ≈ 0.74-0.59 eV is due to dissociation of the positron traps, which is accompanied by restoration of the electrical activity of the phosphorus atoms. The data suggest that the deep donors involve a phosphorus atom and at least two vacancies. Their energy levels are at least at E > E(c) - 0.24 eV in the investigated material.
authors.affiliation: Department of Physics, Martin Luther University Halle, D-06120 Halle, Germany. n_arutyunov@yahoo.com
authors.forename: N Y
authors.initials: NY
authors.lastname: Arutyunov
authors.forename: M
authors.initials: M
authors.lastname: Elsayed
authors.forename: R
authors.initials: R
authors.lastname: Krause-Rehberg
authors.forename: V V
authors.initials: VV
authors.lastname: Emtsev
authors.forename: G A
authors.initials: GA
authors.lastname: Oganesyan
authors.forename: V V
authors.initials: VV
authors.lastname: Kozlovski
mesh_terms: D004553:Electric Conductivity; D004583:Electrons; D010758:Phosphorus / Q000737:chemistry*; D011522:Protons; D011829:Radiation Dosage; D012825:Silicon / Q000737:chemistry* / Q000528:radiation effects; D013696:Temperature
chemical_list: D011522:Protons; D010758:Phosphorus; D012825:Silicon