title: Identification of the nitrogen split interstitial (N-N)(N) in GaN.
abstract: Combining electron paramagnetic resonance, density functional theory, and positron annihilation spectroscopy (PAS), we identify the nitrogen interstitial defect in GaN. The isolated interstitial is unstable and transforms into a split interstitial configuration (N-N)(N). It is generated by particle irradiation with an introduction rate of a primary defect, pins the Fermi level at E(C)-1.0 eV for high fluences, and anneals out at 400 °C. The associated defect, the nitrogen vacancy, is observed by PAS only in the initial stage of irradiation.
authors.affiliation: INSP, Université Pierre et Marie Curie, UMR 7588 au CNRS 4 place Jussieu, 75005 Paris, France. vonbarde@insp.jussieu.fr
authors.forename: H J
authors.initials: HJ
authors.lastname: von Bardeleben
authors.forename: J L
authors.initials: JL
authors.lastname: Cantin
authors.forename: U
authors.initials: U
authors.lastname: Gerstmann
authors.forename: A
authors.initials: A
authors.lastname: Scholle
authors.forename: S
authors.initials: S
authors.lastname: Greulich-Weber
authors.forename: E
authors.initials: E
authors.lastname: Rauls
authors.forename: M
authors.initials: M
authors.lastname: Landmann
authors.forename: W G
authors.initials: WG
authors.lastname: Schmidt
authors.forename: A
authors.initials: A
authors.lastname: Gentils
authors.forename: J
authors.initials: J
authors.lastname: Botsoa
authors.forename: M F
authors.initials: MF
authors.lastname: Barthe