title: Induced magnetic moment of Eu(3+) ions in GaN.
abstract: Magnetic semiconductors with coupled magnetic and electronic properties are of high technological and fundamental importance. Rare-earth elements can be used to introduce magnetic moments associated with the uncompensated spin of 4f-electrons into the semiconductor hosts. The luminescence produced by rare-earth doped semiconductors also attracts considerable interest due to the possibility of electrical excitation of characteristic sharp emission lines from intra 4f-shell transitions. Recently, electroluminescence of Eu-doped GaN in current-injection mode was demonstrated in p-n junction diode structures grown by organometallic vapour phase epitaxy. Unlike most other trivalent rare-earth ions, Eu(3+) ions possess no magnetic moment in the ground state. Here we report the detection of an induced magnetic moment of Eu(3+) ions in GaN which is associated with the (7)F(2) final state of (5)D(0)→(7)F(2) optical transitions emitting at 622 nm. The prospect of controlling magnetic moments electrically or optically will lead to the development of novel magneto-optic devices.
authors.affiliation: Diamond Light Source, Chilton , Didcot, Oxfordshire, United Kingdom, OX11 0DE, UK. slava.kachkanov@diamond.ac.uk
authors.forename: V
authors.initials: V
authors.lastname: Kachkanov
authors.forename: M J
authors.initials: MJ
authors.lastname: Wallace
authors.forename: G
authors.initials: G
authors.lastname: van der Laan
authors.forename: S S
authors.initials: SS
authors.lastname: Dhesi
authors.forename: S A
authors.initials: SA
authors.lastname: Cavill
authors.forename: Y
authors.initials: Y
authors.lastname: Fujiwara
authors.forename: K P
authors.initials: KP
authors.lastname: O'Donnell