title: Controllable electrical properties of metal-doped In2O3 nanowires for high-performance enhancement-mode transistors.
abstract: In recent years, In(2)O(3) nanowires (NWs) have been widely explored in many technological areas due to their excellent electrical and optical properties; however, most of these devices are based on In(2)O(3) NW field-effect transistors (FETs) operating in the depletion mode, which induces relatively higher power consumption and fancier circuit integration design. Here, n-type enhancement-mode In(2)O(3) NW FETs are successfully fabricated by doping different metal elements (Mg, Al, and Ga) in the NW channels. Importantly, the resulting threshold voltage can be effectively modulated through varying the metal (Mg, Ga, and Al) content in the NWs. A series of scaling effects in the mobility, transconductance, threshold voltage, and source-drain current with respect to the device channel length are also observed. Specifically, a small gate delay time (0.01 ns) and high on-current density (0.9 mA/μm) are obtained at 300 nm channel length. Furthermore, Mg-doped In(2)O(3) NWs are then employed to fabricate NW parallel array FETs with a high saturation current (0.5 mA), on/off ratio (>10(9)), and field-effect mobility (110 cm(2)/V·s), while the subthreshold slope and threshold voltage do not show any significant changes. All of these results indicate the great potency for metal-doped In(2)O(3) NWs used in the low-power, high-performance thin-film transistors.
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China.
authors.forename: Xuming
authors.initials: X
authors.lastname: Zou
authors.forename: Xingqiang
authors.initials: X
authors.lastname: Liu
authors.forename: Chunlan
authors.initials: C
authors.lastname: Wang
authors.forename: Ying
authors.initials: Y
authors.lastname: Jiang
authors.forename: Yong
authors.initials: Y
authors.lastname: Wang
authors.forename: Xiangheng
authors.initials: X
authors.lastname: Xiao
authors.forename: Johnny C
authors.initials: JC
authors.lastname: Ho
authors.forename: Jinchai
authors.initials: J
authors.lastname: Li
authors.forename: Changzhong
authors.initials: C
authors.lastname: Jiang
authors.forename: Qihua
authors.initials: Q
authors.lastname: Xiong
authors.forename: Lei
authors.initials: L
authors.lastname: Liao
mesh_terms: D004553:Electric Conductivity; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007204:Indium / Q000737:chemistry*; D053768:Metal Nanoparticles / Q000737:chemistry*; D036103:Nanotechnology / Q000295:instrumentation*; D014173:Transistors, Electronic
chemical_list: D007204:Indium; C047711:indium oxide