title: Metallic rare-earth silicide nanowires on silicon surfaces.
abstract: The formation, atomic structure, and electronic properties of self-assembled rare-earth silicide nanowires on silicon surfaces were studied by scanning tunneling microscopy and angle-resolved photoelectron spectroscopy. Metallic dysprosium and erbium silicide nanowires were observed on both the Si(001) and Si(557) surfaces. It was found that they consist of hexagonal rare-earth disilicides for both surface orientations. On Si(001), the nanowires are characterized by a one-dimensional band structure, while the electronic dispersion is two-dimensional for the nanowires formed on Si(557). This behavior is explained by the different orientations of the hexagonal c axis of the silicide leading to different conditions for the carrier confinement. By considering this carrier confinement it is demonstrated how the one-dimensional band structure of the nanowires on Si(001) can be derived from the two-dimensional one of the silicide monolayer on Si(111).
authors.affiliation: Institut für Festkörperphysik, Technische Universität Berlin, Germany. daehne@physik.tu-berlin.de
authors.forename: Mario
authors.initials: M
authors.lastname: Dähne
authors.forename: Martina
authors.initials: M
authors.lastname: Wanke
mesh_terms: D003460:Crystallization / Q000379:methods*; D004871:Erbium / Q000737:chemistry*; D008422:Materials Testing; D053768:Metal Nanoparticles / Q000737:chemistry* / Q000648:ultrastructure*; D008968:Molecular Conformation; D010316:Particle Size; D012825:Silicon / Q000737:chemistry*
chemical_list: D004871:Erbium; D012825:Silicon