title: Negative-U system of carbon vacancy in 4H-SiC.
abstract: Using electron paramagnetic resonance (EPR), energy levels of the carbon vacancy (V(C)) in 4H-SiC and its negative-U properties have been determined. Combining EPR and deep-level transient spectroscopy we show that the two most common defects in as-grown 4H-SiC--the Z(1/2) lifetime-limiting defect and the EH(7) deep defect--are related to the double acceptor (2-|0) and single donor (0|+) levels of V(C), respectively.
authors.affiliation: Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden.
authors.forename: N T
authors.initials: NT
authors.lastname: Son
authors.forename: X T
authors.initials: XT
authors.lastname: Trinh
authors.forename: L S
authors.initials: LS
authors.lastname: Løvlie
authors.forename: B G
authors.initials: BG
authors.lastname: Svensson
authors.forename: K
authors.initials: K
authors.lastname: Kawahara
authors.forename: J
authors.initials: J
authors.lastname: Suda
authors.forename: T
authors.initials: T
authors.lastname: Kimoto
authors.forename: T
authors.initials: T
authors.lastname: Umeda
authors.forename: J
authors.initials: J
authors.lastname: Isoya
authors.forename: T
authors.initials: T
authors.lastname: Makino
authors.forename: T
authors.initials: T
authors.lastname: Ohshima
authors.forename: E
authors.initials: E
authors.lastname: Janzén