title: Topological-metal to band-insulator transition in (Bi(1-x)In(x))2Se3 thin films.
abstract: By combining transport and photoemission measurements on (Bi(1-x)In(x))(2)Se(3) thin films, we report that this system transforms from a topologically nontrivial metal into a topologically trivial band insulator through three quantum phase transitions. At x ≈ 3%-7%, there is a transition from a topologically nontrivial metal to a trivial metal. At x ≈ 15%, the metal becomes a variable-range-hopping insulator. Finally, above x ≈ 25%, the system becomes a true band insulator with its resistance immeasurably large even at room temperature. This material provides a new venue to investigate topologically tunable physics and devices with seamless gating or tunneling insulators.
authors.affiliation: Department of Physics & Astronomy, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854, USA.
authors.forename: Matthew
authors.initials: M
authors.lastname: Brahlek
authors.forename: Namrata
authors.initials: N
authors.lastname: Bansal
authors.forename: Nikesh
authors.initials: N
authors.lastname: Koirala
authors.forename: Su-Yang
authors.initials: SY
authors.lastname: Xu
authors.forename: Madhab
authors.initials: M
authors.lastname: Neupane
authors.forename: Chang
authors.initials: C
authors.lastname: Liu
authors.forename: M Zahid
authors.initials: MZ
authors.lastname: Hasan
authors.forename: Seongshik
authors.initials: S
authors.lastname: Oh