title: Ultralow doping in organic semiconductors: evidence of trap filling.
abstract: Tail states in organic semiconductors have a significant influence on device performances by acting as traps in charge transport. We present a study of the controlled passivation of acceptor tail states in fullerene C(60) by the addition of electrons introduced by molecular n doping. Using ultralow doping, we are able to successively fill the traps with charges and examine the changes in conductivity, activation energy, mobility, and Fermi-level position. Passivation of the traps leads to an increase of the electron mobility in C(60) by more than 3 orders of magnitude, to reach 0.21 cm(2)/(V s).
authors.affiliation: Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA. solthof@princeton.edu
authors.forename: Selina
authors.initials: S
authors.lastname: Olthof
authors.forename: Shafigh
authors.initials: S
authors.lastname: Mehraeen
authors.forename: Swagat K
authors.initials: SK
authors.lastname: Mohapatra
authors.forename: Stephen
authors.initials: S
authors.lastname: Barlow
authors.forename: Veaceslav
authors.initials: V
authors.lastname: Coropceanu
authors.forename: Jean-Luc
authors.initials: JL
authors.lastname: Brédas
authors.forename: Seth R
authors.initials: SR
authors.lastname: Marder
authors.forename: Antoine
authors.initials: A
authors.lastname: Kahn