title: Bandgap-graded CdS(x)Se(1-x) nanowires for high-performance field-effect transistors and solar cells.
authors.affiliation: Department of Physics, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, P. R. China. lli@suda.edu.cn
authors.forename: Liang
authors.initials: L
authors.lastname: Li
authors.forename: Hao
authors.initials: H
authors.lastname: Lu
authors.forename: Zongyin
authors.initials: Z
authors.lastname: Yang
authors.forename: Limin
authors.initials: L
authors.lastname: Tong
authors.forename: Yoshio
authors.initials: Y
authors.lastname: Bando
authors.forename: Dmitri
authors.initials: D
authors.lastname: Golberg
mesh_terms: D019187:Cadmium Compounds / Q000737:chemistry*; D006046:Gold / Q000737:chemistry; D053770:Nanowires / Q000737:chemistry*; D018036:Selenium Compounds / Q000737:chemistry*; D012993:Solar Energy; D013440:Sulfides / Q000737:chemistry; D013457:Sulfur Compounds / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D019187:Cadmium Compounds; D018036:Selenium Compounds; D013440:Sulfides; D013457:Sulfur Compounds; C034939:cadmium sulfide; D006046:Gold