title: High on/off ratio field effect transistors based on exfoliated crystalline SnS2 nano-membranes.
abstract: We report the implementation of field effect transistors based on exfoliated nano-membranes of a layered two-dimensional semiconductor SnS(2), which exhibit an on/off ratio exceeding 2 × 10(6) and a carrier mobility of ∼1 cm(2) V(-1) s(-1). The results demonstrate the great potential of SnS(2), a layered semiconductor with finite band gap, as the building block for future nanoelectronic applications complementary to graphene-based materials with zero or small band gaps.
authors.affiliation: Department of Physics and the Texas Center for Superconductivity, University of Houston, Houston, TX 77204, USA.
authors.forename: Debtanu
authors.initials: D
authors.lastname: De
authors.forename: John
authors.initials: J
authors.lastname: Manongdo
authors.forename: Sean
authors.initials: S
authors.lastname: See
authors.forename: Vincent
authors.initials: V
authors.lastname: Zhang
authors.forename: Arnold
authors.initials: A
authors.lastname: Guloy
authors.forename: Haibing
authors.initials: H
authors.lastname: Peng
mesh_terms: D003460:Crystallization / Q000379:methods*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008567:Membranes, Artificial; D053768:Metal Nanoparticles / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D013440:Sulfides / Q000737:chemistry*; D017971:Tin Compounds / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D008567:Membranes, Artificial; D013440:Sulfides; D017971:Tin Compounds; C078041:tin sulfide