title: High-performance bottom-contact organic thin-film transistors based on benzo[d,d']thieno[3,2-b;4,5-b']dithiophenes (BTDTs) derivatives.
abstract: Three benzo[d,d']thieno[3,2-b;4,5-b']dithiophene (BTDT) derivatives, end-functionalized with benzothiophenyl (BT-BTDT; 2), benzothieno[3,2-b]thiophenyl (BTT-BTDT; 3), and benzo[d,d']thieno[3,2-b;4,5-b']dithiophenyl (BBTDT; 4), were prepared for bottom-contact/bottom-gate organic thin-film transistors (OTFTs). An improved one-pot [2 + 1 + 1] synthetic method of BTDT with improved synthetic yield was achieved, which enabled the efficient realization of new BTDT-based semiconductors. All of the BTDT compounds exhibited high performance p-channel characteristics with carrier mobilities as high as 0.34 cm(2)/(V s) and a current on/off ratio of 1 × 10(7), as well as enhanced ambient stability. The device characteristics have been correlated with the film morphologies and microstructures of the corresponding compounds.
authors.affiliation: Department of Chemistry, National Central University, Chung-Li, Taiwan, 32054, ROC.
authors.forename: Peng-Yi
authors.initials: PY
authors.lastname: Huang
authors.forename: Liang-Hsiang
authors.initials: LH
authors.lastname: Chen
authors.forename: Choongik
authors.initials: C
authors.lastname: Kim
authors.forename: Hsiu-Chieh
authors.initials: HC
authors.lastname: Chang
authors.forename: You-Jhih
authors.initials: YJ
authors.lastname: Liang
authors.forename: Chieh-Yuan
authors.initials: CY
authors.lastname: Feng
authors.forename: Chia-Ming
authors.initials: CM
authors.lastname: Yeh
authors.forename: Jia-Chong
authors.initials: JC
authors.lastname: Ho
authors.forename: Cheng-Chung
authors.initials: CC
authors.lastname: Lee
authors.forename: Ming-Chou
authors.initials: MC
authors.lastname: Chen