title: Intrinsic electron-phonon resistivity of Bi2Se3 in the topological regime.
abstract: We measure the temperature-dependent carrier density and resistivity of the topological surface state of thin exfoliated Bi(2)Se(3) in the absence of bulk conduction. When the gate-tuned chemical potential is near or below the Dirac point, the carrier density is strongly temperature-dependent, reflecting thermal activation from the nearby bulk valence band, while, above the Dirac point, unipolar n-type surface conduction is observed with negligible thermal activation of bulk carriers. In this regime, linear resistivity vs temperature reflects intrinsic electron-acoustic phonon scattering. A quantitative comparison with a theoretical transport calculation including both phonon and disorder effects gives the ratio of deformation potential to Fermi velocity D/ħν(F)=4.7 Å(-1). This strong phonon scattering in the Bi(2)Se(3) surface state gives intrinsic limits for the conductivity and charge carrier mobility at room temperature of ~550 μS per surface and ~10,000 cm(2)/V s.
authors.affiliation: Center for Nanophysics and Advanced Materials, Department of Physics, University of Maryland, College Park, Maryland 20742-4111, USA.
authors.forename: Dohun
authors.initials: D
authors.lastname: Kim
authors.forename: Qiuzi
authors.initials: Q
authors.lastname: Li
authors.forename: Paul
authors.initials: P
authors.lastname: Syers
authors.forename: Nicholas P
authors.initials: NP
authors.lastname: Butch
authors.forename: Johnpierre
authors.initials: J
authors.lastname: Paglione
authors.forename: S
authors.initials: S
authors.lastname: Das Sarma
authors.forename: Michael S
authors.initials: MS
authors.lastname: Fuhrer