title: Characterization and modeling analysis for metal-semiconductor-metal GaAs diodes with Pd/SiO₂ mixture electrode.
abstract: Characterization and modeling of metal-semiconductor-metal (MSM) GaAs diodes using to evaporate SiO₂ and Pd simultaneously as a mixture electrode (called M-MSM diodes) compared with similar to evaporate Pd as the electrode (called Pd-MSM diodes) were reported. The barrier height (φ(b)) and the Richardson constant (A*) were carried out for the thermionic-emission process to describe well the current transport for Pd-MSM diodes in the consideration of the carrier over the metal-semiconductor barrier. In addition, in the consideration of the carrier over both the metal-semiconductor barrier and the insulator-semiconductor barrier simultaneously, thus the thermionic-emission process can be used to describe well the current transport for M-MSM diodes. Furthermore, in the higher applied voltage, the carrier recombination will be taken into discussion. Besides, a composite-current (CC) model is developed to evidence the concepts. Our calculated results are in good agreement with the experimental ones.
authors.affiliation: Department of Electrical Engineering, National Taiwan Ocean University, Keelung, Taiwan, Republic of China. tanshwei@mail.ntou.edu.tw
authors.forename: Shih-Wei
authors.initials: SW
authors.lastname: Tan
authors.forename: Shih-Wen
authors.initials: SW
authors.lastname: Lai
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D004553:Electric Conductivity; D004566:Electrodes; D005708:Gallium / Q000737:chemistry*; D008962:Models, Theoretical; D010165:Palladium / Q000737:chemistry*; D012666:Semiconductors / Q000295:instrumentation*; D012822:Silicon Dioxide / Q000737:chemistry*
chemical_list: D001152:Arsenicals; C043055:gallium arsenide; D010165:Palladium; D012822:Silicon Dioxide; D005708:Gallium