title: Voltage stress induced reversible diode behavior in pentacene thin films.
abstract: The current-voltage characteristics of a vacuum-deposited 100 nm pentacene thin film have been measured in situ under ultrahigh vacuum. Despite using bottom contact geometry with titanium for both electrodes, the I-V curves are asymmetric and the direction and degree of the diode-like behavior vary with sample and measurement history. After careful examination we have found that applying a high positive or negative bias voltage for about 24 h at elevated temperatures was sufficient to completely switch the diode forward direction. The switching action is fully reversible and the diode behavior, once switched, remains stable to repeated measurements at least over a period of several weeks.
authors.affiliation: Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan. rmurdey@e.kuicr.kyoto-u.ac.jp
authors.forename: Richard
authors.initials: R
authors.lastname: Murdey
authors.forename: Naoki
authors.initials: N
authors.lastname: Sato