title: Dispersion engineering of thick high-Q silicon nitride ring-resonators via atomic layer deposition.
abstract: We demonstrate dispersion engineering of integrated silicon nitride based ring resonators through conformal coating with hafnium dioxide deposited on top of the structures via atomic layer deposition. Both, magnitude and bandwidth of anomalous dispersion can be significantly increased. The results are confirmed by high resolution frequency-comb-assisted-diode-laser spectroscopy and are in very good agreement with the simulated modification of the mode spectrum.
authors.affiliation: Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.
authors.forename: Johann
authors.initials: J
authors.lastname: Riemensberger
authors.forename: Klaus
authors.initials: K
authors.lastname: Hartinger
authors.forename: Tobias
authors.initials: T
authors.lastname: Herr
authors.forename: Victor
authors.initials: V
authors.lastname: Brasch
authors.forename: Ronald
authors.initials: R
authors.lastname: Holzwarth
authors.forename: Tobias J
authors.initials: TJ
authors.lastname: Kippenberg
mesh_terms: D004867:Equipment Design; D020342:Finite Element Analysis; D006195:Hafnium / Q000737:chemistry; D054023:Lasers, Semiconductor; D008855:Microscopy, Electron, Scanning; D055616:Microtechnology / Q000295:instrumentation / Q000379:methods; D008962:Models, Theoretical; D017711:Nonlinear Dynamics; D055095:Optics and Photonics / Q000295:instrumentation* / Q000379:methods*; D010087:Oxides / Q000737:chemistry; D017655:Silicon Compounds / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry; D013057:Spectrum Analysis / Q000295:instrumentation* / Q000379:methods*
chemical_list: D010087:Oxides; D017655:Silicon Compounds; D012822:Silicon Dioxide; C032734:silicon nitride; D006195:Hafnium