title: GeSn/Ge heterostructure short-wave infrared photodetectors on silicon.
abstract: A surface-illuminated photoconductive detector based on Ge0.91Sn0.09 quantum wells with Ge barriers grown on a silicon substrate is demonstrated. Photodetection up to 2.2µm is achieved with a responsivity of 0.1 A/W for 5V bias. The spectral absorption characteristics are analyzed as a function of the GeSn/Ge heterostructure parameters. This work demonstrates that GeSn/Ge heterostructures can be used to developed SOI waveguide integrated photodetectors for short-wave infrared applications.
authors.affiliation: INTEC Department, Ghent University-IMEC, Ghent, Belgium. alban.gassenq@intec.ugent.be
authors.forename: A
authors.initials: A
authors.lastname: Gassenq
authors.forename: F
authors.initials: F
authors.lastname: Gencarelli
authors.forename: J
authors.initials: J
authors.lastname: Van Campenhout
authors.forename: Y
authors.initials: Y
authors.lastname: Shimura
authors.forename: R
authors.initials: R
authors.lastname: Loo
authors.forename: G
authors.initials: G
authors.lastname: Narcy
authors.forename: B
authors.initials: B
authors.lastname: Vincent
authors.forename: G
authors.initials: G
authors.lastname: Roelkens
mesh_terms: D004581:Electronics / Q000295:instrumentation*; D004867:Equipment Design; D005857:Germanium / Q000737:chemistry*; D007259:Infrared Rays; D045663:Quantum Dots; D012825:Silicon / Q000737:chemistry*; D013055:Spectrophotometry, Infrared / Q000295:instrumentation*; D014001:Tin / Q000737:chemistry*
chemical_list: D005857:Germanium; D014001:Tin; D012825:Silicon