title: Atomic scale morphology, growth behaviour and electronic properties of semipolar {101[overline]3} GaN surfaces.
abstract: First-principles calculations relating to the atomic structure and electronic properties of {101[overline]3} GaN surfaces reveal significant differentiations between the two polarity orientations. The (101[overline]3) surface exhibits a remarkable morphological stability, stabilizing a metallic structure (Ga adlayer) over the entire range of the Ga chemical potential. In contrast, the semiconducting, cleaved surface is favoured on (101[overline]3[overline]) under extremely and moderately N-rich conditions, a Ga bilayer is stabilized under corresponding Ga-rich conditions and various transitions between metallic reconstructions take place in intermediate growth stoichiometries. Efficient growth schemes for smooth, two-dimensional GaN layers and the isolation of {101[overline]3} material from parasitic orientations are identified.
authors.affiliation: Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece.
authors.forename: J
authors.initials: J
authors.lastname: Kioseoglou
authors.forename: E
authors.initials: E
authors.lastname: Kalesaki
authors.forename: L
authors.initials: L
authors.lastname: Lymperakis
authors.forename: Th
authors.initials: T
authors.lastname: Karakostas
authors.forename: Ph
authors.initials: P
authors.lastname: Komninou
mesh_terms: D015374:Biosensing Techniques; D004581:Electronics; D005708:Gallium / Q000737:chemistry*; D007700:Kinetics; D008670:Metals / Q000737:chemistry; D008968:Molecular Conformation; D009584:Nitrogen / Q000737:chemistry; D010825:Physics / Q000379:methods*; D012666:Semiconductors; D013499:Surface Properties; D013816:Thermodynamics
chemical_list: D008670:Metals; C473348:gallium nitride; D005708:Gallium; D009584:Nitrogen