title: Probing the bonding and electronic structure of single atom dopants in graphene with electron energy loss spectroscopy.
abstract: A combination of scanning transmission electron microscopy, electron energy loss spectroscopy, and ab initio calculations reveal striking electronic structure differences between two distinct single substitutional Si defect geometries in graphene. Optimised acquisition conditions allow for exceptional signal-to-noise levels in the spectroscopic data. The near-edge fine structure can be compared with great accuracy to simulations and reveal either an sp(3)-like configuration for a trivalent Si or a more complicated hybridized structure for a tetravalent Si impurity.
authors.affiliation: SuperSTEM Laboratory, STFC Daresbury Campus , Daresbury WA4 4AD, United Kingdom.
authors.forename: Quentin M
authors.initials: QM
authors.lastname: Ramasse
authors.forename: Che R
authors.initials: CR
authors.lastname: Seabourne
authors.forename: Despoina-Maria
authors.initials: DM
authors.lastname: Kepaptsoglou
authors.forename: Recep
authors.initials: R
authors.lastname: Zan
authors.forename: Ursel
authors.initials: U
authors.lastname: Bangert
authors.forename: Andrew J
authors.initials: AJ
authors.lastname: Scott