title: Band gap engineering of chemical vapor deposited graphene by in situ BN doping.
abstract: Band gap opening and engineering is one of the high priority goals in the development of graphene electronics. Here, we report on the opening and scaling of band gap in BN doped graphene (BNG) films grown by low-pressure chemical vapor deposition method. High resolution transmission electron microscopy is employed to resolve the graphene and h-BN domain formation in great detail. X-ray photoelectron, micro-Raman, and UV-vis spectroscopy studies revealed a distinct structural and phase evolution in BNG films at low BN concentration. Synchrotron radiation based XAS-XES measurements concluded a gap opening in BNG films, which is also confirmed by field effect transistor measurements. For the first time, a significant band gap as high as 600 meV is observed for low BN concentrations and is attributed to the opening of the π-π* band gap of graphene due to isoelectronic BN doping. As-grown films exhibit structural evolution from homogeneously dispersed small BN clusters to large sized BN domains with embedded diminutive graphene domains. The evolution is described in terms of competitive growth among h-BN and graphene domains with increasing BN concentration. The present results pave way for the development of band gap engineered BN doped graphene-based devices.
authors.affiliation: Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan.
authors.forename: Cheng-Kai
authors.initials: CK
authors.lastname: Chang
authors.forename: Satender
authors.initials: S
authors.lastname: Kataria
authors.forename: Chun-Chiang
authors.initials: CC
authors.lastname: Kuo
authors.forename: Abhijit
authors.initials: A
authors.lastname: Ganguly
authors.forename: Bo-Yao
authors.initials: BY
authors.lastname: Wang
authors.forename: Jeong-Yuan
authors.initials: JY
authors.lastname: Hwang
authors.forename: Kay-Jay
authors.initials: KJ
authors.lastname: Huang
authors.forename: Wei-Hsun
authors.initials: WH
authors.lastname: Yang
authors.forename: Sheng-Bo
authors.initials: SB
authors.lastname: Wang
authors.forename: Cheng-Hao
authors.initials: CH
authors.lastname: Chuang
authors.forename: Mi
authors.initials: M
authors.lastname: Chen
authors.forename: Ching-I
authors.initials: CI
authors.lastname: Huang
authors.forename: Way-Faung
authors.initials: WF
authors.lastname: Pong
authors.forename: Ker-Jar
authors.initials: KJ
authors.lastname: Song
authors.forename: Shoou-Jinn
authors.initials: SJ
authors.lastname: Chang
authors.forename: Jing-Hua
authors.initials: JH
authors.lastname: Guo
authors.forename: Yian
authors.initials: Y
authors.lastname: Tai
authors.forename: Masahiko
authors.initials: M
authors.lastname: Tsujimoto
authors.forename: Seiji
authors.initials: S
authors.lastname: Isoda
authors.forename: Chun-Wei
authors.initials: CW
authors.lastname: Chen
authors.forename: Li-Chyong
authors.initials: LC
authors.lastname: Chen
authors.forename: Kuei-Hsien
authors.initials: KH
authors.lastname: Chen