title: Graphene field-effect transistors with gigahertz-frequency power gain on flexible substrates.
abstract: The development of flexible electronics operating at radio-frequencies (RF) requires materials that combine excellent electronic performance and the ability to withstand high levels of strain. In this work, we fabricate graphene field-effect transistors (GFETs) on flexible substrates from graphene grown by chemical vapor deposition (CVD). Our devices demonstrate unity-current-gain frequencies, f(T), and unity-power-gain frequencies, f(max), up to 10.7 GHz and 3.7 GHz, respectively, with strain limits of 1.75%. These devices represent the only reported technology to achieve gigahertz-frequency power gain at strain levels above 0.5%. As such, they demonstrate the potential of CVD graphene to enable a broad range of flexible electronic technologies which require both high flexibility and RF operation.
authors.affiliation: Department of Mechanical Engineering, Columbia University, New York, New York 10027, USA.
authors.forename: Nicholas
authors.initials: N
authors.lastname: Petrone
authors.forename: Inanc
authors.initials: I
authors.lastname: Meric
authors.forename: James
authors.initials: J
authors.lastname: Hone
authors.forename: Kenneth L
authors.initials: KL
authors.lastname: Shepard