title: Valence subband coupling effect on polarization of spontaneous emissions from Al-rich AlGaN/AlN quantum wells.
abstract: The optical polarization properties of Al-rich AlGaN/AlN quantum wells (QWs) were investigated using the theoretical model based on the k·p method. Numerical results show that there is valence subband coupling which can influence the peak emission wavelength and emission intensity for TE and TM polarization components from Al-rich AlGaN/AlN QWs. Especially the valence subband coupling could be strong enough when CH1 is close to HH1 and LH1 subbands to modulate the critical Al content switching dominant emissions from TE to TM polarization. It is believed that the valence subband coupling may give important influence on polarization properties of spontaneous emissions and should be considered in designing high efficiency AlGaN-based ultraviolet (UV) LEDs.
authors.affiliation: The State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: Huimin
authors.initials: H
authors.lastname: Lu
authors.forename: Tongjun
authors.initials: T
authors.lastname: Yu
authors.forename: Gangcheng
authors.initials: G
authors.lastname: Yuan
authors.forename: Chuanyu
authors.initials: C
authors.lastname: Jia
authors.forename: Genxiang
authors.initials: G
authors.lastname: Chen
authors.forename: Guoyi
authors.initials: G
authors.lastname: Zhang
mesh_terms: D017607:Aluminum Compounds / Q000737:chemistry*; D004581:Electronics / Q000379:methods*; D005708:Gallium / Q000737:chemistry*; D008962:Models, Theoretical; D055095:Optics and Photonics / Q000379:methods*; D045663:Quantum Dots; D014466:Ultraviolet Rays
chemical_list: D017607:Aluminum Compounds; C513700:aluminum gallium nitride; D005708:Gallium