title: Demonstration of electrooptic modulation at 2165nm using a silicon Mach-Zehnder interferometer.
abstract: We demonstrate electrooptic modulation at a wavelength of 2165nm, using a free-carrier injection-based silicon Mach-Zehnder modulator. The modulator has a V(π)∙L figure of merit of 0.12V∙mm, and an extinction ratio of -23dB. Optical modulation experiments are performed at bitrates up to 3Gbps. Our results illustrate that optical modulator design methodologies previously developed for telecom-band devices can be successfully applied to produce high-performance devices for a silicon nanophotonic mid-infrared integrated circuit platform.
authors.affiliation: IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, NY 10598, USA.
authors.forename: Mackenzie A
authors.initials: MA
authors.lastname: Van Camp
authors.forename: Solomon
authors.initials: S
authors.lastname: Assefa
authors.forename: Douglas M
authors.initials: DM
authors.lastname: Gill
authors.forename: Tymon
authors.initials: T
authors.lastname: Barwicz
authors.forename: Steven M
authors.initials: SM
authors.lastname: Shank
authors.forename: Philip M
authors.initials: PM
authors.lastname: Rice
authors.forename: Teya
authors.initials: T
authors.lastname: Topuria
authors.forename: William M J
authors.initials: WM
authors.lastname: Green
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D007368:Interferometry / Q000295:instrumentation*; D012666:Semiconductors; D013685:Telecommunications / Q000295:instrumentation*