title: Self-aligned nanotube-nanowire phase change memory.
abstract: A central issue of nanoelectronics concerns their fundamental scaling limits, that is, the smallest and most energy-efficient devices that can function reliably. Unlike charge-based electronics that are prone to leakage at nanoscale dimensions, memory devices based on phase change materials (PCMs) are more scalable, storing digital information as the crystalline or amorphous state of a material. Here, we describe a novel approach to self-align PCM nanowires with individual carbon nanotube (CNT) electrodes for the first time. The highly scaled and spatially confined memory devices approach the ultimate scaling limits of PCM technology, achieving ultralow programming currents (~0.1 μA set, ~1.6 μA reset), outstanding on/off ratios (~10(3)), and improved endurance and stability at few-nanometer bit dimensions. In addition, the powerful yet simple nanofabrication approach described here can enable confining and probing many other nanoscale and molecular devices self-aligned with CNT electrodes.
authors.affiliation: Micro and Nanotechnology Lab, University of Illinois, Urbana-Champaign, Illinois 61801, USA.
authors.forename: Feng
authors.initials: F
authors.lastname: Xiong
authors.forename: Myung-Ho
authors.initials: MH
authors.lastname: Bae
authors.forename: Yuan
authors.initials: Y
authors.lastname: Dai
authors.forename: Albert D
authors.initials: AD
authors.lastname: Liao
authors.forename: Ashkan
authors.initials: A
authors.lastname: Behnam
authors.forename: Enrique A
authors.initials: EA
authors.lastname: Carrion
authors.forename: Sungduk
authors.initials: S
authors.lastname: Hong
authors.forename: Daniele
authors.initials: D
authors.lastname: Ielmini
authors.forename: Eric
authors.initials: E
authors.lastname: Pop