title: Anisotropic formation and distribution of stacking faults in II-VI semiconductor nanorods.
abstract: Nanocrystals of cadmium selenide exhibit a form of polytypism with stable forms in both the wurtzite and zinc blende crystal structures. As a result, wurtzite nanorods of cadmium selenide tend to form stacking faults of zinc blende along the c-axis. These faults were found to preferentially form during the growth of the (001) face, which accounts for 40% of the rod's total length. Since II-VI semiconductor nanorods lack inversion symmetry along the c-axis of the particle, the two ends of the nanorod may be identified by this anisotropic distribution of faults.
authors.affiliation: Department of Chemistry, University of California, Berkeley, California 94720, USA. hughess2@whitman.edu
authors.forename: Steven M
authors.initials: SM
authors.lastname: Hughes
authors.forename: A Paul
authors.initials: AP
authors.lastname: Alivisatos