title: Ballistic InAs nanowire transistors.
abstract: Ballistic transport of electrons at room temperature in top-gated InAs nanowire (NW) transistors is experimentally observed and theoretically examined. From length dependent studies, the low-field mean free path is directly extracted as ~150 nm. The mean free path is found to be independent of temperature due to the dominant role of surface roughness scattering. The mean free path was also theoretically assessed by a method that combines Fermi's golden rule and a numerical Schrödinger-Poisson simulation to determine the surface scattering potential with the theoretical calculations being consistent with experiments. Near ballistic transport (~80% of the ballistic limit) is demonstrated experimentally for transistors with a channel length of ~60 nm, owing to the long mean free path of electrons in InAs NWs.
authors.affiliation: Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA.
authors.forename: Steven
authors.initials: S
authors.lastname: Chuang
authors.forename: Qun
authors.initials: Q
authors.lastname: Gao
authors.forename: Rehan
authors.initials: R
authors.lastname: Kapadia
authors.forename: Alexandra C
authors.initials: AC
authors.lastname: Ford
authors.forename: Jing
authors.initials: J
authors.lastname: Guo
authors.forename: Ali
authors.initials: A
authors.lastname: Javey
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D053770:Nanowires / Q000737:chemistry*; D013696:Temperature; D014173:Transistors, Electronic
chemical_list: D001152:Arsenicals; D007204:Indium; C076773:indium arsenide