title: High-output-power, single-wavelength silicon hybrid laser using precise flip-chip bonding technology.
abstract: An Si/III-V hybrid laser oscillating at a single wavelength was developed for use in a large-scale Si optical I/O chip. The laser had an InP-based reflective semiconductor optical amplifier (SOA) chip integrated with an Si wavelength-selection-mirror chip in a flip-chip configuration. A low coupling loss of 1.55 dB at the Si-SOA interface was accomplished by both mode-field-matching between Si-SOA waveguides and accurately controlling the bonding position. The fabricated Si hybrid laser exhibited a very low threshold current of 9.4 mA, a high output power of 15.0 mW, and a high wall-plug efficiency of 7.6% at 20 °C. Moreover, the device maintained a high output power of >10 mW up to 60°C due to the high thermal conductance between the SOA chip and Si substrate. The short cavity length of the flip-chip bonded laser expanded the longitudinal mode spacing. This resulted in temperature-stable single longitudinal mode lasing and a low RIN level of <-130 dB/Hz.
authors.affiliation: Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197, Japan. shin-tanaka@jp.fujitsu.com
authors.forename: Shinsuke
authors.initials: S
authors.lastname: Tanaka
authors.forename: Seok-Hwan
authors.initials: SH
authors.lastname: Jeong
authors.forename: Shigeaki
authors.initials: S
authors.lastname: Sekiguchi
authors.forename: Teruo
authors.initials: T
authors.lastname: Kurahashi
authors.forename: Yu
authors.initials: Y
authors.lastname: Tanaka
authors.forename: Ken
authors.initials: K
authors.lastname: Morito
mesh_terms: D000669:Amplifiers, Electronic; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007834:Lasers; D007909:Lenses; D009991:Oscillometry / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry
chemical_list: D012825:Silicon