title: An integrated 12.5-Gb/s optoelectronic receiver with a silicon avalanche photodetector in standard SiGe BiCMOS technology.
abstract: An optoelectronic integrated circuit (OEIC) receiver is realized with standard 0.25-μm SiGe BiCMOS technology for 850-nm optical interconnect applications. The OEIC receiver consists of a Si avalanche photodetector, a transimpedance amplifier with a DC-balanced buffer, a tunable equalizer, and a limiting amplifier. The fabricated OEIC receiver successfully detects 12.5-Gb/s 2(31)-1 pseudorandom bit sequence optical data with the bit-error rate less than 10(-12) at incident optical power of -7 dBm. The OEIC core has 1000 μm x 280 μm chip area, and consumes 59 mW from 2.5-V supply. To the best of our knowledge, this OEIC receiver achieves the highest data rate with the smallest sensitivity as well as the best power efficiency among integrated OEIC receivers fabricated with standard Si technology.
authors.affiliation: Department of Electrical and Electronic Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-gu, Seoul, 120-749, Korea.
authors.forename: Jin-Sung
authors.initials: JS
authors.lastname: Youn
authors.forename: Myung-Jae
authors.initials: MJ
authors.lastname: Lee
authors.forename: Kang-Yeob
authors.initials: KY
authors.lastname: Park
authors.forename: Holger
authors.initials: H
authors.lastname: Rücker
authors.forename: Woo-Young
authors.initials: WY
authors.lastname: Choi
mesh_terms: D004581:Electronics / Q000295:instrumentation*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005857:Germanium / Q000737:chemistry*; D010783:Photometry / Q000295:instrumentation*; D012666:Semiconductors; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry*; D013685:Telecommunications / Q000295:instrumentation*
chemical_list: D005857:Germanium; D012825:Silicon