title: Broadband near-infrared emission of chromium-doped sulfide glass-ceramics containing Ga2S3 nanocrystals.
abstract: Upon 808 nm excitation, an intense broadband near-infrared emission from Cr4+ has been observed in 80GeS2-20Ga2S3 chalcogenide glass-ceramics (GCs) containing Ga2S3 nanocrystals. The emission band peaking at 1250 nm covers the O, E, S bands (1000-1500 nm). The formation of Ga2S3 nanocrystals (∼20  nm) increases the emission intensity of Cr4+ by more than three times. The quantum efficiency of the present GCs is as great as 36% at room temperature.
authors.affiliation: Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China.
authors.forename: Jing
authors.initials: J
authors.lastname: Ren
authors.forename: Bo
authors.initials: B
authors.lastname: Li
authors.forename: Guang
authors.initials: G
authors.lastname: Yang
authors.forename: Weina
authors.initials: W
authors.lastname: Xu
authors.forename: Zhihuan
authors.initials: Z
authors.lastname: Zhang
authors.forename: Mihail
authors.initials: M
authors.lastname: Secu
authors.forename: Vasile
authors.initials: V
authors.lastname: Bercu
authors.forename: Huidan
authors.initials: H
authors.lastname: Zeng
authors.forename: Guorong
authors.initials: G
authors.lastname: Chen