title: Effect of pressure-assisted thermal annealing on the optical properties of ZnO thin films.
abstract: ZnO thin films were prepared by the polymeric precursor method. The films were deposited on silicon substrates using the spin-coating technique, and were annealed at 330 °C for 32 h under pressure-assisted thermal annealing and under ambient pressure. Their structural and optical properties were characterized, and the phases formed were identified by X-ray diffraction. No secondary phase was detected. The ZnO thin films were also characterized by field-emission scanning electron microscopy, Fourier transform infrared spectroscopy, photoluminescence and ultraviolet emission intensity measurements. The effect of pressure on these thin films modifies the active defects that cause the recombination of deep level states located inside the band gap that emit yellow-green (575 nm) and orange (645 nm) photoluminescence.
authors.affiliation: UNESP - Institute of Chemistry, Rua Professor Francisco Degni s/n, Araraquara, 14800-900, Araraquara, SP, Brazil.
authors.forename: Danielle
authors.initials: D
authors.lastname: Berger
authors.forename: Evaldo Toniolo
authors.initials: ET
authors.lastname: Kubaski
authors.forename: Thiago
authors.initials: T
authors.lastname: Sequinel
authors.forename: Renata Martins
authors.initials: RM
authors.lastname: da Silva
authors.forename: Sergio Mazurek
authors.initials: SM
authors.lastname: Tebcherani
authors.forename: José Arana
authors.initials: JA
authors.lastname: Varela
mesh_terms: D049449:Luminescence; D055620:Optical Phenomena; D010316:Particle Size; D011312:Pressure; D013499:Surface Properties; D013696:Temperature; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D015034:Zinc Oxide