title: Rolled-up nanomembranes as compact 3D architectures for field effect transistors and fluidic sensing applications.
abstract: We fabricate inorganic thin film transistors with bending radii of less than 5 μm maintaining their high electronic performance with on-off ratios of more than 10(5) and subthreshold swings of 160 mV/dec. The fabrication technology relies on the roll-up of highly strained semiconducting nanomembranes, which compacts planar transistors into three-dimensional tubular architectures opening intriguing potential for microfluidic applications. Our technique probes the ultimate limit for the bending radius of high performance thin film transistors.
authors.affiliation: Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany. d.grimm@ifw-dresden.de
authors.forename: Daniel
authors.initials: D
authors.lastname: Grimm
authors.forename: Carlos Cesar
authors.initials: CC
authors.lastname: Bof Bufon
authors.forename: Christoph
authors.initials: C
authors.lastname: Deneke
authors.forename: Paola
authors.initials: P
authors.lastname: Atkinson
authors.forename: Dominic J
authors.initials: DJ
authors.lastname: Thurmer
authors.forename: Franziska
authors.initials: F
authors.lastname: Schäffel
authors.forename: Sandeep
authors.initials: S
authors.lastname: Gorantla
authors.forename: Alicja
authors.initials: A
authors.lastname: Bachmatiuk
authors.forename: Oliver G
authors.initials: OG
authors.lastname: Schmidt