title: Electrical pump & probe and injected carrier losses quantification in Er doped Si slot waveguides.
abstract: Electrically driven Er(3+) doped Si slot waveguides emitting at 1530 nm are demonstrated. Two different Er(3+) doped active layers were fabricated in the slot region: a pure SiO(2) and a Si-rich oxide. Pulsed polarization driving of the waveguides was used to characterize the time response of the electroluminescence (EL) and of the signal probe transmission in 1 mm long waveguides. Injected carrier absorption losses modulate the EL signal and, since the carrier lifetime is much smaller than that of Er(3+) ions, a sharp EL peak was observed when the polarization was switched off. A time-resolved electrical pump & probe measurement in combination with lock-in amplifier techniques allowed to quantify the injected carrier absorption losses. We found an extinction ratio of 6 dB, passive propagation losses of about 4 dB/mm, and a spectral bandwidth > 25 nm at an effective d.c. power consumption of 120 μW. All these performances suggest the usage of these devices as electro-optical modulators.
authors.affiliation: MIND-IN2UB, Departament d'Electrònica, Universitat de Barcelona, Martí i Franquès 1, Barcelona 08028, Spain. jmramirez@el.ub.es
authors.forename: J M
authors.initials: JM
authors.lastname: Ramírez
authors.forename: Y
authors.initials: Y
authors.lastname: Berencén
authors.forename: F
authors.initials: F
authors.lastname: Ferrarese Lupi
authors.forename: D
authors.initials: D
authors.lastname: Navarro-Urrios
authors.forename: A
authors.initials: A
authors.lastname: Anopchenko
authors.forename: A
authors.initials: A
authors.lastname: Tengattini
authors.forename: N
authors.initials: N
authors.lastname: Prtljaga
authors.forename: L
authors.initials: L
authors.lastname: Pavesi
authors.forename: P
authors.initials: P
authors.lastname: Rivallin
authors.forename: J M
authors.initials: JM
authors.lastname: Fedeli
authors.forename: B
authors.initials: B
authors.lastname: Garrido
mesh_terms: D004574:Electromagnetic Fields; D004867:Equipment Design; D019544:Equipment Failure Analysis; D004871:Erbium / Q000737:chemistry*; D012031:Refractometry / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry*; D020349:Surface Plasmon Resonance / Q000295:instrumentation*
chemical_list: D004871:Erbium; D012825:Silicon