title: 1.3 μm InAs/GaAs quantum dot lasers on Si rib structures with current injection across direct-bonded GaAs/Si heterointerfaces.
abstract: An InAs/GaAs quantum dot laser on a Si rib structure has been demonstrated. The double heterostructure laser structure grown on a GaAs substrate is layer-transferred onto a patterned Si substrate by GaAs/Si direct wafer bonding without oxide or metal mediation. This Fabry-Perot laser operates with current injection through the GaAs/Si rib interface and exhibits InAs quantum dot ground state lasing at 1.28 μm at room temperature, with a threshold current density of 480 A cm(-2).
authors.affiliation: Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan. tanabe@iis.u-tokyo.ac.jp
authors.forename: Katsuaki
authors.initials: K
authors.lastname: Tanabe
authors.forename: Katsuyuki
authors.initials: K
authors.lastname: Watanabe
authors.forename: Yasuhiko
authors.initials: Y
authors.lastname: Arakawa