title: Ultraviolet electroluminescence from nitrogen-doped ZnO-based heterojuntion light-emitting diodes prepared by remote plasma in situ atomic layer-doping technique.
abstract: Remote plasma in situ atomic layer doping technique was applied to prepare an n-type nitrogen-doped ZnO (n-ZnO:N) layer upon p-type magnesium-doped GaN (p-GaN:Mg) to fabricate the n-ZnO:N/p-GaN:Mg heterojuntion light-emitting diodes. The room-temperature electroluminescence exhibits a dominant ultraviolet peak at λ ≈ 370 nm from ZnO band-edge emission and suppressed luminescence from GaN, as a result of the decrease in electron concentration in ZnO and reduced electron injection from n-ZnO:N to p-GaN:Mg because of the nitrogen incorporation. The result indicates that the in situ atomic layer doping technique is an effective approach to tailoring the electrical properties of materials in device applications.
authors.affiliation: Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan, Republic of China.
authors.forename: Jui-Fen
authors.initials: JF
authors.lastname: Chien
authors.forename: Hua-Yang
authors.initials: HY
authors.lastname: Liao
authors.forename: Sheng-Fu
authors.initials: SF
authors.lastname: Yu
authors.forename: Ray-Ming
authors.initials: RM
authors.lastname: Lin
authors.forename: Makoto
authors.initials: M
authors.lastname: Shiojiri
authors.forename: Jing-Jong
authors.initials: JJ
authors.lastname: Shyue
authors.forename: Miin-Jang
authors.initials: MJ
authors.lastname: Chen