title: Raman scattering of magnetoelectric gallium ferrite thin films.
abstract: Gallium ferrite, Ga(2-x)Fe(x)O(3) (GFO), is a promising magnetoelectric material as it exhibits both magnetic and electric orders close to room temperature. Here, we report a temperature-dependent investigation of GFO thin films with x = 1.0 and 1.4 by using Raman scattering. Our investigation suggests the absence of a structural phase transition of both films in the investigated 90-500 K temperature range, which is similar to earlier observations on bulk samples. We note, however, the occurrence of weak anomalies in the temperature-dependent band position of some phonons, which we attribute to spin-phonon coupling as the anomalies occur close to the Néel temperature of the materials.
authors.affiliation: Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504, 23 rue du Loess, BP 43, F-67034 Strasbourg Cedex 2, France.
authors.forename: Alexandre
authors.initials: A
authors.lastname: Thomasson
authors.forename: Jens
authors.initials: J
authors.lastname: Kreisel
authors.forename: Christophe
authors.initials: C
authors.lastname: Lefèvre
authors.forename: François
authors.initials: F
authors.lastname: Roulland
authors.forename: Gilles
authors.initials: G
authors.lastname: Versini
authors.forename: Sophie
authors.initials: S
authors.lastname: Barre
authors.forename: Nathalie
authors.initials: N
authors.lastname: Viart