title: Organic nonvolatile resistive switching memory based on molecularly entrapped fullerene derivative within a diblock copolymer nanostructure.
abstract: Organic nonvolatile resistive switching memory is developed via selective incorporation of fullerene derivatives, [6,6]-phenyl-C61 butyric acid methyl ester (PCBM), into the nanostructure of self-assembled poly(styrene-b-methyl methacrylate) (PS₁₀ -b-PMMA₁₃₀) diblock copolymer. PS₁₀ -b-PMMA₁₃₀ diblock copolymer provides a spatially ordered nanotemplate with a 10-nm PS nanosphere domain surrounded by a PMMA matrix. Spin casting of the blend solution of PS₁₀ -b-PMMA₁₃₀ and PCBM spontaneously forms smooth films without PCBM aggregation in which PCBM molecules are incorporated within a PS nanosphere domain of PS₁₀ -b-PMMA₁₃₀ nanostructure by preferential intermixing propensity of PCBM and PS. Based on the well-defined PS₁₀-b-PMMA ₁₃₀/PCBM nanostructure, resistive random access memory (ReRAM) exhibits significantly improved bipolar-switching behavior with stable and reproducible properties at low operating voltages (RESET at 1.3 V and SET at -1.5 V) under ambient conditions. Finally, flexible memory devices are achieved using a nanostructured PS₁₀ -b-PMMA₁₃₀ /PCBM composite in which no significant degradation of electrical properties is observed before and after bending.
authors.affiliation: Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742, Republic of Korea.
authors.forename: Hanju
authors.initials: H
authors.lastname: Jo
authors.forename: Jieun
authors.initials: J
authors.lastname: Ko
authors.forename: Jung Ah
authors.initials: JA
authors.lastname: Lim
authors.forename: Hye Jung
authors.initials: HJ
authors.lastname: Chang
authors.forename: Youn Sang
authors.initials: YS
authors.lastname: Kim
mesh_terms: D004560:Electricity; D037741:Fullerenes / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry*; D019904:Polymethyl Methacrylate / Q000737:chemistry*; D011137:Polystyrenes / Q000737:chemistry*; D012666:Semiconductors
chemical_list: C539575:(6,6)-phenyl C61-butyric acid methyl ester; D037741:Fullerenes; D011137:Polystyrenes; C522519:poly(styrene-block-methyl methacrylate); D019904:Polymethyl Methacrylate