title: Phase transformation in SiOx/SiO₂ multilayers for optoelectronics and microelectronics applications.
abstract: Due to the quantum confinement, silicon nanoclusters (Si-ncs) embedded in a dielectric matrix are of prime interest for new optoelectronics and microelectronics applications. In this context, SiO(x)/SiO₂ multilayers have been prepared by magnetron sputtering and subsequently annealed to induce phase separation and Si clusters growth. The aim of this paper is to study phase separation processes and formation of nanoclusters in SiO(x)/SiO₂ multilayers by atom probe tomography. Influences of the silicon supersaturation, annealing temperature and SiO(x) and SiO₂ layer thicknesses on the final microstructure have been investigated. It is shown that supersaturation directly determines phase separation regime between nucleation/classical growth and spinodal decomposition. Annealing temperature controls size of the particles and interface with the surrounding matrix. Layer thicknesses directly control Si-nc shapes from spherical to spinodal-like structures.
authors.affiliation: Groupe de Physique des Matériaux, Université et INSA de Rouen, UMR CNRS 6634, Avenue de l'Université, BP 12, 76801 Saint Etienne du Rouvray, France, Europe.
authors.forename: M
authors.initials: M
authors.lastname: Roussel
authors.forename: E
authors.initials: E
authors.lastname: Talbot
authors.forename: R
authors.initials: R
authors.lastname: Pratibha Nalini
authors.forename: F
authors.initials: F
authors.lastname: Gourbilleau
authors.forename: P
authors.initials: P
authors.lastname: Pareige
keywords: Atom probe Tomography; Multilayers; Optoelectronics; Phase transformation; Silicon nanocluster