title: Recombination dynamics in InGaN/GaN nanowire heterostructures on Si(111).
abstract: We have performed room-temperature time-resolved photoluminescence measurements on samples that comprise InGaN insertions embedded in GaN nanowires. The decay curves reveal non-exponential recombination dynamics that evolve into a power law at long times. We find that the characteristic power-law exponent increases with emission photon energy. The data are analyzed in terms of a model that involves an interplay between a radiative state and a metastable charge-separated state. The agreement between our results and the model points towards an emission dominated by carriers localized on In-rich nanoclusters that form spontaneously inside the InGaN insertions.
authors.affiliation: Département de Physique and Regroupement Québécois sur Matériaux de Pointe, Université de Montréal, Case Postale 6128, Succursale Centre-ville, Montréal, QC, H3C 3J7, Canada.
authors.forename: V
authors.initials: V
authors.lastname: Cardin
authors.forename: L I
authors.initials: LI
authors.lastname: Dion-Bertrand
authors.forename: P
authors.initials: P
authors.lastname: Grégoire
authors.forename: H P T
authors.initials: HP
authors.lastname: Nguyen
authors.forename: M
authors.initials: M
authors.lastname: Sakowicz
authors.forename: Z
authors.initials: Z
authors.lastname: Mi
authors.forename: C
authors.initials: C
authors.lastname: Silva
authors.forename: R
authors.initials: R
authors.lastname: Leonelli
mesh_terms: D003460:Crystallization / Q000379:methods*; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D046911:Macromolecular Substances; D007204:Indium; C473348:gallium nitride; D005708:Gallium; C513701:indium nitride; D012825:Silicon