title: Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature.
abstract: The wide bandgap and highly transparent inorganic compound copper(I) thiocyanate (CuSCN) is used for the first time to fabricate p-type thin-film transistors processed from solution at room temperature. By combining CuSCN with the high-k relaxor ferroelectric polymeric dielectric P(VDF-TrFE-CFE), we demonstrate low-voltage transistors with hole mobilities on the order of 0.1 cm(2) V(-1) s(-1) . By integrating two CuSCN transistors, unipolar logic NOT gates are also demonstrated.
authors.affiliation: Centre for Plastic Electronics and Department of Physics, Blackett Laboratory, Imperial College London, London, UK.
authors.forename: Pichaya
authors.initials: P
authors.lastname: Pattanasattayavong
authors.forename: Nir
authors.initials: N
authors.lastname: Yaacobi-Gross
authors.forename: Kui
authors.initials: K
authors.lastname: Zhao
authors.forename: Guy Olivier Ngongang
authors.initials: GO
authors.lastname: Ndjawa
authors.forename: Jinhua
authors.initials: J
authors.lastname: Li
authors.forename: Feng
authors.initials: F
authors.lastname: Yan
authors.forename: Brian C
authors.initials: BC
authors.lastname: O'Regan
authors.forename: Aram
authors.initials: A
authors.lastname: Amassian
authors.forename: Thomas D
authors.initials: TD
authors.lastname: Anthopoulos
mesh_terms: D003300:Copper; D013696:Temperature; D013861:Thiocyanates / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D013861:Thiocyanates; D003300:Copper; C028631:cuprous thiocyanate