title: A field-shaping multi-well avalanche detector for direct conversion amorphous selenium.
abstract: OBJECTIVE
  A practical detector structure is proposed to achieve stable avalanche multiplication gain in direct-conversion amorphous selenium radiation detectors.
  
  
  METHODS
  The detector structure is referred to as a field-shaping multi-well avalanche detector. Stable avalanche multiplication gain is achieved by eliminating field hot spots using high-density avalanche wells with insulated walls and field-shaping inside each well.
  
  
  RESULTS
  The authors demonstrate the impact of high-density insulated wells and field-shaping to eliminate the formation of both field hot spots in the avalanche region and high fields at the metal-semiconductor interface. Results show a semi-Gaussian field distribution inside each well using the field-shaping electrodes, and the electric field at the metal-semiconductor interface can be one order-of-magnitude lower than the peak value where avalanche occurs.
  
  
  CONCLUSIONS
  This is the first attempt to design a practical direct-conversion amorphous selenium detector with avalanche gain.
authors.forename: A H
authors.initials: AH
authors.lastname: Goldan
authors.forename: W
authors.initials: W
authors.lastname: Zhao
mesh_terms: D055615:Electrical Equipment and Supplies; D012643:Selenium / Q000737:chemistry*
chemical_list: D012643:Selenium