title: Size- and orientation-selective si nanowire growth: thermokinetic effects of nanoscale plasma chemistry.
abstract: A multiscale, multiphase thermokinetic model is used to show the effective control of the growth orientation of thin Si NWs for nanoelectronic devices enabled by nanoscale plasma chemistry. It is shown that very thin Si NWs with [110] growth direction can nucleate at much lower process temperatures and pressures compared to thermal chemical vapor deposition where [111]-directed Si NWs are predominantly grown. These findings explain a host of experimental results and offer the possibility of energy- and matter-efficient, size- and orientation-controlled growth of [110] Si NWs for next-generation nanodevices.
authors.affiliation: Plasma Nanoscience Centre Australia (PNCA), CSIRO Materials Science and Engineering, P.O. Box 218, Lindfield, New South Wales 2070, Australia.
authors.forename: Hamid
authors.initials: H
authors.lastname: Mehdipour
authors.forename: Kostya Ken
authors.initials: KK
authors.lastname: Ostrikov
mesh_terms: D007700:Kinetics; D036103:Nanotechnology; D053770:Nanowires / Q000737:chemistry*; D010316:Particle Size; D012825:Silicon / Q000737:chemistry*; D013696:Temperature
chemical_list: D012825:Silicon