title: Large and tunable photothermoelectric effect in single-layer MoS2.
abstract: We study the photoresponse of single-layer MoS(2) field-effect transistors by scanning photocurrent microscopy. We find that, unlike in many other semiconductors, the photocurrent generation in single-layer MoS(2) is dominated by the photothermoelectric effect and not by the separation of photoexcited electron-hole pairs across the Schottky barriers at the MoS(2)/electrode interfaces. We observe a large value for the Seebeck coefficient for single-layer MoS(2) that by an external electric field can be tuned between -4 × 10(2) and -1 × 10(5) μV K(-1). This large and tunable Seebeck coefficient of the single-layer MoS(2) paves the way to new applications of this material such as on-chip thermopower generation and waste thermal energy harvesting.
authors.affiliation: Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands. M.Buscema@tudelft.nl
authors.forename: Michele
authors.initials: M
authors.lastname: Buscema
authors.forename: Maria
authors.initials: M
authors.lastname: Barkelid
authors.forename: Val
authors.initials: V
authors.lastname: Zwiller
authors.forename: Herre S J
authors.initials: HS
authors.lastname: van der Zant
authors.forename: Gary A
authors.initials: GA
authors.lastname: Steele
authors.forename: Andres
authors.initials: A
authors.lastname: Castellanos-Gomez