title: On-chip optical interconnects made with gallium nitride nanowires.
abstract: In this Letter we report on the fabrication, device characteristics, and optical coupling of a two-nanowire device comprising GaN nanowires with light-emitting and photoconductive capabilities. Axial p-n junction GaN nanowires were grown by molecular beam epitaxy, transferred to a non-native substrate, and selectively contacted to form discrete optical source or detector nanowire components. The optical coupling demonstrated for this device may provide new opportunities for integration of optical interconnects between on-chip electrical subsystems.
authors: Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305, USA. matthew.brubaker@nist.gov
authors: Matt D
authors: MD
authors: Brubaker
authors: Paul T
authors: PT
authors: Blanchard
authors: John B
authors: JB
authors: Schlager
authors: Aric W
authors: AW
authors: Sanders
authors: Alexana
authors: A
authors: Roshko
authors: Shannon M
authors: SM
authors: Duff
authors: Jason M
authors: JM
authors: Gray
authors: Victor M
authors: VM
authors: Bright
authors: Norman A
authors: NA
authors: Sanford
authors: Kris A
authors: KA
authors: Bertness