title: Photoelectric probing of the interfacial trap density-of-states in ZnO nanowire field-effect transistors.
abstract: We have fabricated transparent top-gate ZnO nanowire (NW) field effect transistors (FETs) on glass and measured their trap density-of-states (DOS) at the dielectric/ZnO NW interface with monochromatic photon beams during their operation. Our photon-probe method showed clear signatures of charge trap DOS at the interface, located near 2.3, 2.7, and 2.9 eV below the conduction band edge. The DOS information was utilized for the photo-detecting application of our transparent NW-FETs, which demonstrated fast and sensitive photo-detection of visible lights.
authors: Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea.
authors: Syed Raza Ali
authors: SR
authors: Raza
authors: Young Tack
authors: YT
authors: Lee
authors: Youn-Gyoung
authors: YG
authors: Chang
authors: Pyo Jin
authors: PJ
authors: Jeon
authors: Jae Hoon
authors: JH
authors: Kim
authors: Ryong
authors: R
authors: Ha
authors: Heon-Jin
authors: HJ
authors: Choi
authors: Seongil
authors: S
authors: Im