title: Gate-tunable large negative tunnel magnetoresistance in Ni-C60-Ni single molecule transistors.
abstract: We have fabricated single C(60) molecule transistors with ferromagnetic Ni leads (FM-SMTs) by using an electrical break junction method and investigated their magnetotransport. The FM-SMTs exhibited clear gate-dependent hysteretic tunnel magnetoresistance (TMR) and the TMR values reached as high as -80%. The polarity of the TMR was found to be always negative over the entire bias range studied here. Density functional theory calculations show that hybridization between the Ni substrate states and the C(60) molecular orbitals generates an antiferromagnetic configuration in the local density of states near the Fermi level, which gives a reasonable explanation for the observed negative TMR.
authors: Institute of Industrial Science and Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505, Japan. kyoshida@iis.u-tokyo.ac.jp
authors: Kenji
authors: K
authors: Yoshida
authors: Ikutaro
authors: I
authors: Hamada
authors: Shuichi
authors: S
authors: Sakata
authors: Akinori
authors: A
authors: Umeno
authors: Masaru
authors: M
authors: Tsukada
authors: Kazuhiko
authors: K
authors: Hirakawa