title: Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate.
abstract: We report polarized Raman scattering studies on single InAs nanowires (NWs). The NWs were grown by metalorganic chemical vapor deposition on Si (111) substrates without external catalyst and showed a zinc-blende crystal structure. The single NWs were studied for different polarization excitation of the incident laser beam relative to the NW axis. The transverse optical (TO) mode exhibits maximum intensity when both the incident and analyzed light polarizations are parallel to the NW axis. The TO mode of InAs NWs is found to act like a nearly perfect dipole antenna, which can be attributed to the one-dimensional NW geometry and Raman selection rules.
authors: Department of Physics, School of Physics and Electronics, Henan University, Kaifeng, 475004, People's Republic of China. juneguo@henu.edu.cn.
authors: Tianfeng
authors: T
authors: Li
authors: Lizhen
authors: L
authors: Gao
authors: Wen
authors: W
authors: Lei
authors: Lijun
authors: L
authors: Guo
authors: Tao
authors: T
authors: Yang
authors: Yonghai
authors: Y
authors: Chen
authors: Zhanguo
authors: Z
authors: Wang