title: Anisotropic topological surface states on high-index Bi2Se3 films.
abstract: A high-index topological insulator thin film, Bi2 Se3 (221), is grown on a faceted InP(001) substrate by molecular-beam epitaxy (see model in figure (a)). Angle-resolved photoemission spectroscopy measurement reveals the Dirac cone structure of the surface states on such a surface (figure (b)). The Fermi surface is elliptical (figure (c)), suggesting an anisotropy along different crystallographic directions. Transport studies also reveal a strong anisotropy in Hall conductance.
authors: Physics Department, The University of Hong Kong, Hong Kong.
authors: Zhongjie
authors: Z
authors: Xu
authors: Xin
authors: X
authors: Guo
authors: Mengyu
authors: M
authors: Yao
authors: Hongtao
authors: H
authors: He
authors: Lin
authors: L
authors: Miao
authors: Lu
authors: L
authors: Jiao
authors: Hongchao
authors: H
authors: Liu
authors: Jiannong
authors: J
authors: Wang
authors: Dong
authors: D
authors: Qian
authors: Jinfeng
authors: J
authors: Jia
authors: Wingkin
authors: W
authors: Ho
authors: Maohai
authors: M
authors: Xie