title: Stable field emission from nanoporous silicon carbide.
abstract: We report on a new type of stable field emitter capable of electron emission at levels comparable to thermal sources.  Such an emitter potentially enables significant advances in several important technologies which currently use thermal electron sources. These include communications through microwave electronics, and more notably imaging for medicine and security where new modalities of detection may arise due to variable-geometry x-ray sources. Stable emission of 6 A cm(-2) is demonstrated in a macroscopic array, and lifetime measurements indicate these new emitters are sufficiently robust to be considered for realistic implementation. The emitter is a monolithic structure, and is made in a room-temperature process. It is fabricated from a silicon carbide wafer, which is formed into a highly porous structure resembling an aerogel, and further patterned into an array. The emission properties may be tuned both through control of the nanoscale morphology and the macroscopic shape of the emitter array.
authors: The Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD 20899-6204, USA.
authors: Myung-Gyu
authors: MG
authors: Kang
authors: Henri J
authors: HJ
authors: Lezec
authors: Fred
authors: F
authors: Sharifi
mesh_terms: D017554:Carbon Compounds, Inorganic / Q000737:chemistry*; D003952:Diagnostic Imaging / Q000379:methods; D004581:Electronics / Q000379:methods; D004583:Electrons; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000379:methods; D016062:Porosity; D017655:Silicon Compounds / Q000737:chemistry*
chemical_list: D017554:Carbon Compounds, Inorganic; D017655:Silicon Compounds; C022088:silicon carbide