title: Micro-ultracapacitors with highly doped silicon nanowires electrodes.
abstract: Highly n-doped silicon nanowires (SiNWs) with several lengths have been deposited via chemical vapor deposition on silicon substrate. These nanostructured silicon substrates have been used as electrodes to build symmetrical micro-ultracapacitors. These devices show a quasi-ideal capacitive behavior in organic electrolyte (1 M NEt4BF4 in propylene carbonate). Their capacitance increases with the length of SiNWs on the electrode and has been improved up to 10 μFcm-2 by using 20 μm SiNWs, i.e., ≈10-fold bulk silicon capacitance. This device exhibits promising galvanostatic charge/discharge cycling stability with a maximum power density of 1.4 mW cm-2.
authors: SiNaPS Laboratory SP2M, UMR-E CEA/UJF-Grenoble 1, Grenoble, 38054, France. pascal.gentile@cea.fr.
authors: Fleur
authors: F
authors: Thissandier
authors: Nicolas
authors: N
authors: Pauc
authors: Thierry
authors: T
authors: Brousse
authors: Pascal
authors: P
authors: Gentile
authors: Saïd
authors: S
authors: Sadki