title: Bipolar resistive switching in p-type Co3O4 nanosheets prepared by electrochemical deposition.
abstract: Metal oxide nanosheets have potential applications in novel nanoelectronics as nanocrystal building blocks. In this work, the devices with a structure of Au/p-type Co3O4 nanosheets/indium tin oxide/glass having bipolar resistive switching characteristics were successfully fabricated. The experimental results demonstrate that the device have stable high/low resistance ratio that is greater than 25, endurance performance more than 200 cycles, and data retention more than 10,000 s. Such a superior performance of the as-fabricated device could be explained by the bulk film and Co3O4/indium tin oxide glass substrate interface effect.
authors: School of Materials Science and Engineering, University of New South Wales, Sydney, New South Wales, 2052, Australia. d.chu@unsw.edu.au.
authors: Adnan
authors: A
authors: Younis
authors: Dewei
authors: D
authors: Chu
authors: Xi
authors: X
authors: Lin
authors: Jiunn
authors: J
authors: Lee
authors: Sean
authors: S
authors: Li