Generation of Dicke states with phonon-mediated multilevel stimulated Raman adiabatic passage.
We generate half-excited symmetric Dicke states of two and four ions. We use multilevel stimulated Raman adiabatic passage whose intermediate states are phonon Fock states. This process corresponds to the spin squeezing operation and half-excited Dicke states are generated during multilevel stimulated Raman adiabatic passage. This method does not require local access for each ion or the preparation of phonon Fock states. Furthermore, it is robust since it is an adiabatic process. We evaluate the Dicke state using a witness operator and determine the upper and lower bounds of the fidelity without using full quantum tomography.
Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 5608531, Japan. noguchi@qe.ee.es.osaka-u.ac.jp
Atsushi
A
Noguchi
Kenji
K
Toyoda
Shinji
S
Urabe