Electronic Griffiths phase in the Te-doped semiconductor FeSb2.
We report on the emergence of an electronic Griffiths phase in the doped semiconductor FeSb(2), predicted for disordered insulators with random localized moments in the vicinity of a metal-insulator transition. Magnetic, transport, and thermodynamic measurements of Fe(Sb(1-x)Te(x))(2) single crystals show signatures of disorder-induced non-Fermi liquid behavior and a Wilson ratio expected for strong electronic correlations. The electronic Griffiths phase states are found on the metallic boundary between the insulating state (x = 0) and a long-range albeit weak magnetic order (x ≥ 0.075).
Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA.
Rongwei
R
Hu
Kefeng
K
Wang
Hyejin
H
Ryu
Hechang
H
Lei
E S
ES
Choi
M
M
Uhlarz
J
J
Wosnitza
C
C
Petrovic