Spin-filtering and rectification effects in a Z-shaped boron nitride nanoribbon junction.
A Z-shaped junction constructed by a few-nanometer-long armchair-edged boron nitride nanoribbon (ABNNR) sandwiched between two semi-infinite zigzag-edged BNNR electrodes with different hydrogen-passivated edge treatment is proposed, and its spin-dependent electronic transport is studied by ab initio calculations. It is found that a short ABNNR exhibits metallic behavior and can be used as a conduction channel. Interestingly, the spin-filtering and rectification effects exist in the junctions without any edge passivation or with boron-edge passivation. The analysis on the projected density of states and spatial distribution of molecular projected self-consistent Hamiltonian eigenstates gives an insight into the observed results for the system. Our results suggest that a BNNR-based nanodevices with spin-filtering and rectification effects may be synthesized from an hexagonal boron nitride sheet by properly tailoring and edge passivation.
Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation (Ministry of Education), Hunan Normal University, Changsha 410081, China.
Haiqing
H
Wan
Benhu
B
Zhou
Wenhu
W
Liao
Guanghui
G
Zhou
D001896:Boron Compounds / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry*; D011789:Quantum Theory
D001896:Boron Compounds; C017282:boron nitride