Epsilon-near-zero mode for active optoelectronic devices.
The electromagnetic modes of a GaAs quantum well between two AlGaAs barriers are studied. At the longitudinal optical phonon frequency, the system supports a phonon polariton mode confined in the thickness of the quantum well that we call epsilon-near-zero mode. This epsilon-near-zero mode can be resonantly excited through a grating resulting in a very large absorption localized in the single quantum well. We show that the reflectivity can be modulated by applying a voltage. This paves the way to a new class of active optoelectronic devices working in the midinfrared and far infrared at ambient temperature.
Laboratoire Charles Fabry, Institut d'Optique, CNRS, Université Paris-Sud, 2 avenue Augustin Fresnel, 91127 Palaiseau cedex, France.
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Vassant
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Archambault
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Marquier
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Pardo
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Gennser
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Cavanna
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Pelouard
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Greffet