Enhanced performance of benzothieno[3,2-b]thiophene (BTT)-based bottom-contact thin-film transistors.
Three new benzothieno[3,2-b]thiophene (BTT; 1) derivatives, which were end-functionalized with phenyl (BTT-P; 2), benzothiophenyl (BTT-BT; 3), and benzothieno[3,2-b]thiophenyl groups (BBTT; 4; dimer of 1), were synthesized and characterized in organic thin-film transistors (OTFTs). A new and improved synthetic method for BTTs was developed, which enabled the efficient realization of new BTT-based semiconductors. The crystal structure of BBTT was determined by single-crystal X-ray diffraction. Within this family, BBTT, which had the largest conjugation of the BTT derivatives in this study, exhibited the highest p-channel characteristic, with a carrier mobility as high as 0.22 cm(2)  V(-1)  s(-1) and a current on/off ratio of 1×10(7) , as well as good ambient stability for bottom-contact/bottom-gate OTFT devices. The device characteristics were correlated with the film morphologies and microstructures of the corresponding compounds.
Department of Chemistry, National Central University, Chung-Li, Taiwan, Republic of China.
Peng-Yi
PY
Huang
Liang-Hsiang
LH
Chen
Yu-Yuan
YY
Chen
Wen-Jung
WJ
Chang
Juin-Jie
JJ
Wang
Kwang-Hwa
KH
Lii
Jing-Yi
JY
Yan
Jia-Chong
JC
Ho
Cheng-Chung
CC
Lee
Choongik
C
Kim
Ming-Chou
MC
Chen
D018360:Crystallography, X-Ray; D008958:Models, Molecular; D015394:Molecular Structure; D013876:Thiophenes / Q000138:chemical synthesis* / Q000737:chemistry; D014173:Transistors, Electronic
D013876:Thiophenes; C582830:benzothieno(3,2-b)thiophene