Self-assembled dual in-plane gate thin-film transistors gated by nanogranular SiO2 proton conductors for logic applications.
Phosphorus (P)-doped nanogranular SiO(2) films are deposited by plasma-enhanced chemical vapor deposition at room temperature, and a high proton conductivity of ~5.6 × 10(-4) S cm(-1) is measured at room temperature with a relative humidity of 70%. The accumulation of protons at the SiO(2)/indium-zinc-oxide (IZO) interface induces a large electric-double-layer (EDL) capacitance. Thin-film transistors (TFTs) with two in-plane gates are self-assembled on transparent conducting glass substrates. The large EDL capacitance can effectively modulate the IZO channel with a current ON/OFF ratio of >10(7). Such TFTs calculate dual input signals at the gate level coupled with a floating gate, analogous to that of neuron MOS (vMOS). AND logic is demonstrated on the neuron TFTs. Such neuron TFTs gated by P-doped nanogranular SiO(2) shows an effective electrostatic modulation on conductivities of oxide semiconductors, which is meaningful for portable chemical-biological sensing applications.
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China.
Li Qiang
LQ
Zhu
Jia
J
Sun
Guo Dong
GD
Wu
Hong Liang
HL
Zhang
Qing
Q
Wan