Structural transformations in the low-temperature grown GaAs with superlattices of Sb and P δ-layers.
The structure of low-temperature grown GaAs with equidistant δ-layers of Sb and P was studied by analysis of the X-ray curves, which was supported by optical absorption measurements and transmission electron microscopy. The simultaneous fitting of the X-ray reflectivity curve and diffraction ones for GaAs (004) and GaAs (115) crystallographic planes provided reliable information about the period of δ-layer superlattice, thickness of the Sb and P δ-layers, and amount of excess As. Variation of these parameters was documented when excess As precipitated into As nanoinclusions upon annealing. The Sb and P δ-layers impact differently on the As precipitation processes in low-temperature grown GaAs. The combination of Sb and P δ-layers appears to be an effective tool for spatial patterning of the nanoinclusion array and prevention of the defect formation under annealing.
Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021 St Petersburg, Russian Federation. baidakova@mail.ioffe.ru
M V
MV
Baidakova
N A
NA
Bert
V V
VV
Chaldyshev
V N
VN
Nevedomsky
M A
MA
Yagovkina
V V
VV
Preobrazhenskii
M A
MA
Putyato
B R
BR
Semyagin
X-ray diffraction and reflectivity; low-temperature grown GaAs; structural transformation