title: Hybrid phototransistors based on bulk heterojunction films of poly(3-hexylthiophene) and zinc oxide nanoparticle.
abstract: Hybrid phototransistors (HPTRs) were fabricated on glass substrates using organic/inorganic hybrid bulk heterojunction films of p-type poly(3-hexylthiophene) (P3HT) and n-type zinc oxide nanoparticles (ZnO(NP)). The content of ZnO(NP) was varied up to 50 wt % in order to understand the composition effect of ZnO(NP) on the performance of HPTRs. The morphology and nanostructure of the P3HT:ZnO(NP) films was examined by employing high resolution electron microscopes and synchrotron radiation grazing angle X-ray diffraction system. The incident light intensity (P(IN)) was varied up to 43.6 μW/cm², whereas three major wavelengths (525 nm, 555 nm, 605 nm) corresponded to the optical absorption of P3HT were applied. Results showed that the present HPTRs showed typical p-type transistor performance even though the n-type ZnO(NP) content increased up to 50 wt %. The highest transistor performance was obtained at 50 wt %, whereas the lowest performance was measured at 23 wt % because of the immature bulk heterojunction morphology. The drain current (I(D)) was proportionally increased with P(IN) due to the photocurrent generation in addition to the field-effect current. The highest apparent and corrected responsivities (R(A) = 4.7 A/W and R(C) = 2.07 A/W) were achieved for the HPTR with the P3HT:ZnO(NP) film (50 wt % ZnO(NP)) at P(IN) = 0.27 μW/cm² (555 nm).
authors: Organic Nanoelectronics Laboratory, Department of Chemical Engineering, Kyungpook National University, Daegu 702-701, Republic of Korea.
authors: Sungho
authors: S
authors: Nam
authors: Jooyeok
authors: J
authors: Seo
authors: Soohyeong
authors: S
authors: Park
authors: Sooyong
authors: S
authors: Lee
authors: Jaehoon
authors: J
authors: Jeong
authors: Hyena
authors: H
authors: Lee
authors: Hwajeong
authors: H
authors: Kim
authors: Youngkyoo
authors: Y
authors: Kim