title: High-mobility ZnO nanorod field-effect transistors by self-alignment and electrolyte-gating.
abstract: High mobility, solution-processed field-effect transistors are important building blocks for flexible electronics. Here we demonstrate the alignment of semiconducting, colloidal ZnO nanorods by a simple solvent evaporation technique and achieve high electron mobilities in field-effect transistors at low operating voltages by electrolyte-gating with ionic liquids. The degree of alignment varies with nanorod length, concentration and solvent evaporation rate. We find a strong dependence of electron mobility on the degree of alignment but less on the length of the nanorods. Maximum field-effect mobilities reach up to 9 cm(2) V(-1) s(-1) for optimal alignment. Because of the low process temperature (150 °C), ZnO nanorod thin films are suitable for application on flexible polymer substrates.
authors: Institute of Polymer Materials, Friedrich-Alexander Universität Erlangen-Nürnberg, Martensstrasse 7, D-91058 Erlangen, Germany.
authors: Stefan
authors: S
authors: Thiemann
authors: Mathias
authors: M
authors: Gruber
authors: Irina
authors: I
authors: Lokteva
authors: Johannes
authors: J
authors: Hirschmann
authors: Marcus
authors: M
authors: Halik
authors: Jana
authors: J
authors: Zaumseil