title: Ultraviolet irradiation-controlled memory effect in graphene field-effect transistors.
abstract: Control of graphene memory devices using photons, via control of the charge-transfer process, is demonstrated by employing gate-voltage pulses to program/erase the memory elements. The hysteresis in the conductance-gate voltage-dependence of graphene field-effect transistors on a SiO2 substrate can be greatly enlarged by ultraviolet irradiation in both air and vacuum. An enhanced charge transfer between graphene and its surroundings, induced by ultraviolet illumination, is proposed.
authors: State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, PR China.
authors: Jie
authors: J
authors: Meng
authors: Han-Chun
authors: HC
authors: Wu
authors: Jing-Jing
authors: JJ
authors: Chen
authors: Fang
authors: F
authors: Lin
authors: Ya-Qing
authors: YQ
authors: Bie
authors: Igor V
authors: IV
authors: Shvets
authors: Da-Peng
authors: DP
authors: Yu
authors: Zhi-Min
authors: ZM
authors: Liao
keywords: field-effect transistors; graphene; hysteresis; photoelectrical responses; trap states