title: 113Gb/s (10 x 11.3Gb/s) ultra-low power EAM driver array.
abstract: This paper presents an ultra-low power SiGe BiCMOS IC for driving a 10 channel electro-absorption modulator (EAM) array at 113Gb/s for wavelength division multiplexing passive optical network (WDM-PON) applications. With an output swing of 2.5V(pp), the EAM driver array consumes only 2.2W or 220mW per channel, 50% below the state of the art. Both the output swing and bias are configurable between 1.5 and 3.0V(pp) and 0.75-2.15V respectively.
authors: INTEC/IMEC, Ghent University, Gent, Belgium. *renato.vaernewyck@intec.ugent.be
authors: Renato
authors: R
authors: Vaernewyck
authors: Johan
authors: J
authors: Bauwelinck
authors: Xin
authors: X
authors: Yin
authors: Ramses
authors: R
authors: Pierco
authors: Jochen
authors: J
authors: Verbrugghe
authors: Guy
authors: G
authors: Torfs
authors: Zhisheng
authors: Z
authors: Li
authors: Xing-Zhi
authors: XZ
authors: Qiu
authors: Jan
authors: J
authors: Vandewege
authors: Richard
authors: R
authors: Cronin
authors: Anna
authors: A
authors: Borghesani
authors: David
authors: D
authors: Moodie