title: Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memories.
abstract: AgI nanoionics-based resistive switching memories were studied in respect to chemical stability of the Ag/AgI interface using x-ray absorption spectroscopy. The apparent dissolution of Ag films of thickness below some tens of nanometers and the loss of electrode/electrolyte contact was critically addressed. The results evidently show that there are no chemical interactions at the interface despite the high ionic mobility of Ag ions. Simulation results further show that Ag metal clusters can form in the AgI layer with intermediate-range order at least up to next-next nearest neighbors, suggesting that Ag can permeate into the AgI only in an aggregated form of metal crystallite.
authors: Institut für Werkstoffe der Elektrotechnik 2 & JARA-FIT, RWTH Aachen University, 52056 Aachen, Germany.
authors: Deok-Yong
authors: DY
authors: Cho
authors: Stefan
authors: S
authors: Tappertzhofen
authors: Rainer
authors: R
authors: Waser
authors: Ilia
authors: I
authors: Valov
references: Nat Mater. 2011 Jun 26;10(8):591-5
references: 21706012
references: Phys Rev B Condens Matter. 1990 May 15;41(14):9668-9675
references: 9993338
references: Adv Mater. 2012 Aug 28;24(33):4552-6
references: 22786689
references: Phys Rev Lett. 2008 Oct 10;101(15):155901
references: 18999615
references: Nature. 2010 Apr 8;464(7290):873-6
references: 20376145
references: Nat Mater. 2012 Apr 29;11(6):530-5
references: 22543299
references: Nat Mater. 2007 Nov;6(11):833-40
references: 17972938
references: Adv Mater. 2012 Jan 10;24(2):252-67
references: 21989741
references: Nanotechnology. 2012 Apr 13;23(14):145703
references: 22434046
references: Nanotechnology. 2011 Jun 24;22(25):254003
references: 21572191
references: Phys Rev B Condens Matter. 1991 Dec 1;44(21):11569-11577
references: 9999288