title: Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells.
abstract: Spatially-resolved electroluminescence (EL) images in the triple-junction InGaP/InGaAs/Ge solar cell have been investigated to demonstrate the subcell coupling effect. Upon irradiating the infrared light with an energy below bandgap of the active layer in the top subcell, but above that in the middle subcell, the EL of the top subcell quenches. By analysis of EL intensity as a function of irradiation level, it is found that the coupled p-n junction structure and the photovoltaic effect are responsible for the observed EL quenching. With optical coupling and photoswitching effects in the multi-junction diode, a concept of infrared image sensors is proposed.
authors: Department of Physics, Chung Yuan Christian University, Chung-Li 32023, Taiwan.
authors: G W
authors: GW
authors: Shu
authors: J Y
authors: JY
authors: Lin
authors: H T
authors: HT
authors: Jian
authors: J L
authors: JL
authors: Shen
authors: S C
authors: SC
authors: Wang
authors: C L
authors: CL
authors: Chou
authors: W C
authors: WC
authors: Chou
authors: C H
authors: CH
authors: Wu
authors: C H
authors: CH
authors: Chiu
authors: H C
authors: HC
authors: Kuo
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D011211:Electric Power Supplies; D004867:Equipment Design; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008422:Materials Testing; D000073718:Pancreatitis-Associated Proteins; D012031:Refractometry / Q000295:instrumentation*; D012993:Solar Energy; D013472:Sunlight; D020349:Surface Plasmon Resonance / Q000295:instrumentation*
chemical_list: D001152:Arsenicals; D000073718:Pancreatitis-Associated Proteins; C000612141:REG3A protein, human; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide