title: Temperature dependence of anisotropic mode splitting induced by birefringence in an InGaAs/GaAs/AlGaAs vertical-cavity surface-emitting laser studied by reflectance difference spectroscopy.
abstract: The temperature dependence of the mode splitting induced by birefringence in an InGaAs/GaAs/AlGaAs vertical-cavity surface-emitting laser has been studied by reflectance difference spectroscopy at different temperatures ranging from 80 to 330 K. The anisotropic broadening width and the anisotropic integrated area of the cavity mode under different temperatures are also determined. The relation between the mode splitting and the birefringence is obtained by theoretical calculation using a Jones matrix approach. The temperature dependence of the energy position of the cavity mode and the quantum well transition are also determined by nearly normal reflectance and photoluminescence, respectively.
authors: College of Physics and Information Engineering, and Institute of Micro/Nano Devices and Solar Cells, Fuzhou University, Fuzhou, Fujian Province 350108, China. jlyu@semi.ac.cn
authors: Jinling
authors: J
authors: Yu
authors: Yonghai
authors: Y
authors: Chen
authors: Shuying
authors: S
authors: Cheng
authors: Yunfeng
authors: Y
authors: Lai