title: Fabrication of p-type ZnSe:Sb nanowires for high-performance ultraviolet light photodetector application.
abstract: p-type ZnSe nanowires (NWs) with tunable electrical conductivity were fabricated on a large scale by evaporating a mixed powder composed of ZnSe and Sb in different ratios. According to the structural characterization, the Sb-doped ZnSe NWs are of single crystalline form and grow along the [001] direction. The presence of Sb in the ZnSe NWs was confirmed by XPS spectra. Electrical measurement of a single ZnSe:Sb NW based back-gate metal-oxide field-effect-transistor reveals that all the doped NWs exhibit typical p-type conduction characteristics, and the conductivity can be tuned over eight orders of magnitude, from 6.36 × 10(-7) S cm(-1) for the undoped sample to ∼37.33 S cm(-1) for the heavily doped sample. A crossed p-n nano-heterojunction photodetector made from the as-doped nanostructures displays pronounced rectification behavior, with a rectification ratio as high as 10(3) at ±5 V. Remarkably, it exhibits high sensitivity to ultraviolet light illumination with good reproducibility and quick photoresponse. Finally, the work mechanism of such a p-n junction based photodetector was elucidated. The generality of the above result suggests that the as-doped p-type ZnSe NWs will find wide application in future optoelectronics devices.
authors: School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China.
authors: Biao
authors: B
authors: Nie
authors: Lin-Bao
authors: LB
authors: Luo
authors: Jing-Jing
authors: JJ
authors: Chen
authors: Ji-Gang
authors: JG
authors: Hu
authors: Chun-Yan
authors: CY
authors: Wu
authors: Li
authors: L
authors: Wang
authors: Yong-Qiang
authors: YQ
authors: Yu
authors: Zhi-Feng
authors: ZF
authors: Zhu
authors: Jian-Sheng
authors: JS
authors: Jie