title: A new mirroring circuit for power MOS current sensing highly immune to EMI.
abstract: This paper deals with the monitoring of power transistor current subjected to radio-frequency interference. In particular, a new current sensor with no connection to the power transistor drain and with improved performance with respect to the existing current-sensing schemes is presented. The operation of the above mentioned current sensor is discussed referring to time-domain computer simulations. The susceptibility of the proposed circuit to radio-frequency interference is evaluated through time-domain computer simulations and the results are compared with those obtained for a conventional integrated current sensor.
authors: Microelectronics EMC Group, Eln. Department, Politecnico di Torino, Corso Duca degli Abruzzi 24, Turin, Italy. orazio.aiello@polito.it
authors: Orazio
authors: O
authors: Aiello
authors: Franco
authors: F
authors: Fiori