title: Improved heat dissipation in gallium nitride light-emitting diodes with embedded graphene oxide pattern.
abstract: The future of solid-state lighting relies on how the performance parameters will be improved further for developing high-brightness light-emitting diodes. Eventually, heat removal is becoming a crucial issue because the requirement of high brightness necessitates high-operating current densities that would trigger more joule heating. Here we demonstrate that the embedded graphene oxide in a gallium nitride light-emitting diode alleviates the self-heating issues by virtue of its heat-spreading ability and reducing the thermal boundary resistance. The fabrication process involves the generation of scalable graphene oxide microscale patterns on a sapphire substrate, followed by its thermal reduction and epitaxial lateral overgrowth of gallium nitride in a metal-organic chemical vapour deposition system under one-step process. The device with embedded graphene oxide outperforms its conventional counterpart by emitting bright light with relatively low-junction temperature and thermal resistance. This facile strategy may enable integration of large-scale graphene into practical devices for effective heat removal.
authors: School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, South Korea.
authors: Nam
authors: N
authors: Han
authors: Tran Viet
authors: TV
authors: Cuong
authors: Min
authors: M
authors: Han
authors: Beo Deul
authors: BD
authors: Ryu
authors: S
authors: S
authors: Chandramohan
authors: Jong Bae
authors: JB
authors: Park
authors: Ji Hye
authors: JH
authors: Kang
authors: Young-Jae
authors: YJ
authors: Park
authors: Kang Bok
authors: KB
authors: Ko
authors: Hee Yun
authors: HY
authors: Kim
authors: Hyun Kyu
authors: HK
authors: Kim
authors: Jae Hyoung
authors: JH
authors: Ryu
authors: Y S
authors: YS
authors: Katharria
authors: Chel-Jong
authors: CJ
authors: Choi
authors: Chang-Hee
authors: CH
authors: Hong
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