title: 1.56 µm 1 watt single frequency semiconductor disk laser.
abstract: A single frequency wafer-fused semiconductor disk laser at 1.56 µm with 1 watt of output power and a coherence length over 5 km in fiber is demonstrated. The result represents the highest output power reported for a narrow-line semiconductor disk laser operating at this spectral range. The study shows the promising potential of the wafer fusion technique for power scaling of single frequency vertical-cavity lasers emitting in the 1.3-1.6 µm range.
authors: Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720 Tampere, Finland. antti.rantamaki@tut.fi
authors: Antti
authors: A
authors: Rantamäki
authors: Jussi
authors: J
authors: Rautiainen
authors: Alexei
authors: A
authors: Sirbu
authors: Alexandru
authors: A
authors: Mereuta
authors: Eli
authors: E
authors: Kapon
authors: Oleg G
authors: OG
authors: Okhotnikov
mesh_terms: D004735:Energy Transfer; D004867:Equipment Design; D019544:Equipment Failure Analysis; D054023:Lasers, Semiconductor