title: Comparative study on the performance of five different  Hall effect devices.
abstract: Five different Hall Effect sensors were modeled and their performance evaluated using a three dimensional simulator. The physical structure of the implemented sensors reproduces a certain technological fabrication process. Hall voltage, absolute, current-related, voltage-related and power-related sensitivities were obtained for each sensor. The effect of artificial offset was also investigated for cross-like structures. The simulation procedure guides the designer in choosing the Hall cell optimum shape, dimensions and device polarization conditions that would allow the highest performance.
authors: STI-IEL-Electronics Laboratory, Ecole Polytechnique Fédérale de Lausanne, Lausanne, Switzerland. maria-alexandra.paun@epfl.ch
authors: Maria-Alexandra
authors: MA
authors: Paun
authors: Jean-Michel
authors: JM
authors: Sallese
authors: Maher
authors: M
authors: Kayal