title: Horizontally patterned Si nanowire growth for nanomechanical devices.
abstract: We report a method to pattern horizontal vapor-liquid-solid growth of Si nanowires at vertical sidewalls of Si microstructures. The method allows one to produce either single nanowire structures or well-ordered nanowire arrays with predefined growth positions, thus enabling a practical development of nanomechanical devices that exploit the singular properties of Si nanowires. In particular, we demonstrate the fabrication of doubly clamped nanowire resonators and resonator arrays whose mechanical resonances can be measured by optical or electrical readout. We also show that the fabrication method enables the electrical readout of the resonant mode splitting of nanowire resonators in the VHF range, which allows the application of such an effect for enhanced nanomechanical sensing with nanowire resonators.
authors: Instituto de Microelectrónica de Barcelona (IMB-CNM, CSIC), Campus UAB, F-08193 Bellaterra, Spain.
authors: M
authors: M
authors: Fernandez-Regulez
authors: M
authors: M
authors: Sansa
authors: M
authors: M
authors: Serra-Garcia
authors: E
authors: E
authors: Gil-Santos
authors: J
authors: J
authors: Tamayo
authors: F
authors: F
authors: Perez-Murano
authors: A
authors: A
authors: San Paulo