title: Highly improved uniformity in the resistive switching parameters of TiO2 thin films by inserting Ru nanodots.
abstract: Limiting the location where electron injection occurs at the cathode interface to a narrower region is the key factor for achieving a highly improved RS performance, which can be achieved by including Ru Nanodots. The development of a memory cell structure truly at the nanoscale with such a limiting factor for the electric-field distribution can solve the non-uniformity issue of future ReRAM.
authors: WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, Korea.
authors: Jung Ho
authors: JH
authors: Yoon
authors: Jeong Hwan
authors: JH
authors: Han
authors: Ji Sim
authors: JS
authors: Jung
authors: Woojin
authors: W
authors: Jeon
authors: Gun Hwan
authors: GH
authors: Kim
authors: Seul Ji
authors: SJ
authors: Song
authors: Jun Yeong
authors: JY
authors: Seok
authors: Kyung Jean
authors: KJ
authors: Yoon
authors: Min Hwan
authors: MH
authors: Lee
authors: Cheol Seong
authors: CS
authors: Hwang