title: Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications.
abstract: GaN wires are grown on a Si (111) substrate by metal organic vapour-phase epitaxy on a thin deposited AlN blanket and through a thin SiNx layer formed spontaneously at the AlN/Si interface. N-doped wires are used as templates for the growth of core-shell InGaN/GaN multiple quantum wells coated by a p-doped shell. Standing single-wire heterostructures are connected using a metallic tip and a Si substrate backside contact, and the electroluminescence at room temperature and forward bias is demonstrated at 420 nm. This result points out the feasibility of lower cost nitride-based wires for light-emitting diode applications.
authors: Equipe mixte CEA-CNRS-UJF "Nanophysique et semiconducteurs", SP2M, UMR-E CEA/UJF-Grenoble 1, INAC, Grenoble, 38054, France. damien.salomon@cea.fr.
authors: Damien
authors: D
authors: Salomon
authors: Amelie
authors: A
authors: Dussaigne
authors: Matthieu
authors: M
authors: Lafossas
authors: Christophe
authors: C
authors: Durand
authors: Catherine
authors: C
authors: Bougerol
authors: Pierre
authors: P
authors: Ferret
authors: Joel
authors: J
authors: Eymery
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