title: Synthesis and characterization of p-n homojunction-containing zinc oxide nanowires.
abstract: We illustrate a simple method to synthesize highly ordered ZnO axial p-n homojunction-containing nanowires using a low temperature method, and on a variety of substrates. X-ray diffraction, scanning transmission electron microscopy, scanning electron microscopy, and Raman spectroscopy are used to reveal high quality single-crystalline wires with a [001] growth direction. The study of electrical transport through a single nanowire based device and cathodoluminescence via scanning transmission electron microscopy demonstrates that an axial p-n junction exists within each ZnO nanowire. This represents the first low temperature synthesis of axial p-n homojunction-containing ZnO nanowires with uniform and controllable diameters.
authors: Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506, USA.
authors: Guohua
authors: G
authors: Li
authors: Abhishek
authors: A
authors: Sundararajan
authors: Anas
authors: A
authors: Mouti
authors: Yao-Jen
authors: YJ
authors: Chang
authors: Andrew R
authors: AR
authors: Lupini
authors: Stephen J
authors: SJ
authors: Pennycook
authors: Douglas R
authors: DR
authors: Strachan
authors: Beth S
authors: BS
authors: Guiton
mesh_terms: D008855:Microscopy, Electron, Scanning / Q000379:methods; D053770:Nanowires / Q000737:chemistry* / Q000648:ultrastructure; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D015034:Zinc Oxide