title: A compact and low loss Y-junction for submicron silicon waveguide.
abstract: We designed a compact, low-loss and wavelength insensitive Y-junction for submicron silicon waveguide using finite difference time-domain (FDTD) simulation and particle swarm optimization (PSO), and fabricated the device in a 248 nm complementary metal-oxide-semiconductor (CMOS) compatible process. Measured average insertion loss is 0.28 ± 0.02 dB, uniform across an 8-inch wafer. The device footprint is less than 1.2 μm x 2 μm, an order of magnitude smaller than typical multimode interferometers (MMIs) and directional couplers.
authors: Department of Electrical and Computer Engineering, University of Delaware, Newark, DE, USA. yizhang@udel.edu
authors: Yi
authors: Y
authors: Zhang
authors: Shuyu
authors: S
authors: Yang
authors: Andy Eu-Jin
authors: AE
authors: Lim
authors: Guo-Qiang
authors: GQ
authors: Lo
authors: Christophe
authors: C
authors: Galland
authors: Tom
authors: T
authors: Baehr-Jones
authors: Michael
authors: M
authors: Hochberg