title: Effects of surface characteristics of dielectric layers on polymer thin-film transistors obtained by spray methods.
abstract: The effect of surface characteristics of dielectric layers on the molecular orientation and device performance of sprayed organic field-effect transistors (OFETs) obtained by a novel solvent-assisted post-treatment, called the solvent-sprayed overlayer (SSO) method, were investigated. The OFETs were fabricated by the spray method using regioregular poly(3-hexylthiophene) (RR-P3HT) as an active material. The SSO treatment was applied on the as-sprayed active layers to arrange the molecular ordering. Bare thin SiO(2) layers and octadecyltrichlorosilane (OTS)-treated SiO(2) (OTS-SiO(2)) were employed as the dielectric materials. The resulting chain orientation, crystallinity, and device performance were correlated as a function of SSO treatment and dielectric layers. The intrinsic limitation of spray methods for polymer film formation was overcome regardless of the type of dielectric layer using the SSO treatment. The orientation direction of RR-P3HT was controlled by SSO treatment to an edge-on dominant orientation that is preferential for charge transport, regardless of the type of dielectric layer. The crystal growth was further enhanced on the OTS-SiO(2) layers because of the reduced nucleation sites. These effects were successfully reflected in the device performance, including an orders-of-magnitude increase in charge mobility. The SSO method is a powerful external treatment method for reorienting the molecular ordering of solidified active films of OFETs to the preferential edge-on packing. The growth of crystals was further optimized by controlling the surface characteristics of the dielectric layers. The purpose of this study was to find the full capabilities of the SSO treatment method that will facilitate the development of high-throughput, large-area organic electronic device manufacturing.
authors: Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejon, 305-701, Republic of Korea.
authors: Hye-Yun
authors: HY
authors: Park
authors: Jun-Su
authors: JS
authors: Jin
authors: Sanggyu
authors: S
authors: Yim
authors: Seung-Hwan
authors: SH
authors: Oh
authors: Phil-Hyun
authors: PH
authors: Kang
authors: Si-Kyung
authors: SK
authors: Choi
authors: Sung-Yeon
authors: SY
authors: Jang