title: Oxygen environmental and passivation effects on molybdenum disulfide field effect transistors.
abstract: We investigated the effects of passivation on the electrical characteristics of molybdenum disulfide (MoS(2)) field effect transistors (FETs) under nitrogen, vacuum, and oxygen environments. When the MoS(2) FETs were exposed to oxygen, the on-current decreased and the threshold voltage shifted in the positive gate bias direction as a result of electrons being trapped by the adsorbed oxygen at the MoS(2) surface. In contrast, the electrical properties of the MoS(2) FETs changed only slightly in the different environments when a passivation layer was created using polymethyl methacrylate (PMMA). Specifically, the carrier concentration of unpassivated devices was reduced to 6.5 × 10(15) cm(-2) in oxygen from 16.3 × 10(15) cm(-2) in nitrogen environment. However, in PMMA-passivated devices, the carrier concentration remained nearly unchanged in the range of 1-3 × 10(15) cm(-2) regardless of the environment. Our study suggests that surface passivation is important for MoS(2)-based electronic devices.
authors: Department of Physics and Astronomy, Seoul National University, Gwanak-ro, Gwanak-gu, Seoul 151-747, Korea.
authors: Woanseo
authors: W
authors: Park
authors: Juhun
authors: J
authors: Park
authors: Jingon
authors: J
authors: Jang
authors: Hyungwoo
authors: H
authors: Lee
authors: Hyunhak
authors: H
authors: Jeong
authors: Kyungjune
authors: K
authors: Cho
authors: Seunghun
authors: S
authors: Hong
authors: Takhee
authors: T
authors: Lee