title: Dislocation density dependent electroabsorption in epitaxial lateral overgrown InGaN/GaN quantum structures.
abstract: We study electroabsorption (EA) behavior of InGaN/GaN quantum structures grown using epitaxial lateral overgrowth (ELOG) in correlation with their dislocation density levels and in comparison to steady state and time-resolved photoluminescence measurements. The results reveal that ELOG structures with decreasing mask stripe widths exhibit stronger EA performance, with a maximum EA enhancement factor of 4.8 compared to the reference without ELOG. The analyses show that the EA performance follows similar trends with decreasing dislocation density as the essential parameters of the photoluminescence spectra (peak position, width and intensity) together with the photoluminescence lifetimes. While keeping the growth window widths constant, compared to photoluminescence behavior, however, EA surprisingly exhibits the largest performance variation, making EA the most sensitive to the mask stripe widths.
authors: Department of Electrical and Electronics Engineering, UNAM-National Nanotechnology Research Center, Bilkent University, 06800 Bilkent, Ankara, Turkey.
authors: Emre
authors: E
authors: Sari
authors: Lee Woon
authors: LW
authors: Jang
authors: Jong Hyeob
authors: JH
authors: Baek
authors: In Hwan
authors: IH
authors: Lee
authors: Xiao Wei
authors: XW
authors: Sun
authors: Hilmi Volkan
authors: HV
authors: Demir