title: Growth of gallium nitride and indium nitride nanowires on conductive and flexible carbon cloth substrates.
abstract: We report a general strategy for synthesis of gallium nitride (GaN) and indium nitride (InN) nanowires on conductive and flexible carbon cloth substrates. GaN and InN nanowires were prepared via a nanocluster-mediated growth method using a home built chemical vapor deposition (CVD) system with Ga and In metals as group III precursors and ammonia as a group V precursor. Electron microscopy studies reveal that the group III-nitride nanowires are single crystalline wurtzite structures. The morphology, density and growth mechanism of these nanowires are determined by the growth temperature. Importantly, a photoelectrode fabricated by contacting the GaN nanowires through a carbon cloth substrate shows pronounced photoactivity for photoelectrochemical water oxidation. The ability to synthesize group III-nitride nanowires on conductive and flexible substrates should open up new opportunities for nanoscale photonic, electronic and electrochemical devices.
authors: Department of Chemistry and Biochemistry, University of California, Santa Cruz, California 95064, USA.
authors: Yi
authors: Y
authors: Yang
authors: Yichuan
authors: Y
authors: Ling
authors: Gongming
authors: G
authors: Wang
authors: Xihong
authors: X
authors: Lu
authors: Yexiang
authors: Y
authors: Tong
authors: Yat
authors: Y
authors: Li