title: Vertical-cavity and randomly scattered lasing from different thicknesses of epitaxial ZnO films grown on Y₂O₃-buffered Si (111).
abstract: Two different types of lasing modes, vertical Fabry-Perot cavity and random lasing, were observed in ZnO epi-films of different thicknesses grown on Si (111) substrates. Under optical excitation at room temperature by a frequency tripled Nd:YVO₄ laser with wavelength of 355 nm, the lasing thresholds are low due to high crystalline quality of the ZnO epitaxial films, which act as microresonators. For the thick ZnO layer (1,200 nm), its lasing action is originated from the random scattering due to the high density of crack networks developed in the thick ZnO film. However, the low crack density of the thin film (555 nm) fails to provide feedback loops essential for random scattering. Nevertheless, even the lower threshold lasing is achieved by the Fabry-Perot cavity formed by two interfaces of the thin ZnO film. The associated lasing modes of the thin ZnO film can be characterized as the transverse Gaussian modes attributed to the smooth curved surfaces.
authors: Department of Photonics & Institute of Electro-Optical Engineering National Chiao Tung University, 1001 Tahsueh Rd., Hsinchu 30010, Taiwan.
authors: C C
authors: CC
authors: Kuo
authors: W-R
authors: WR
authors: Liu
authors: B H
authors: BH
authors: Lin
authors: W F
authors: WF
authors: Hsieh
authors: C-H
authors: CH
authors: Hsu
authors: W C
authors: WC
authors: Lee
authors: M
authors: M
authors: Hong
authors: J
authors: J
authors: Kwo
mesh_terms: D003461:Crystallography / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007368:Interferometry / Q000295:instrumentation*; D007834:Lasers; D012825:Silicon / Q000737:chemistry*; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D015034:Zinc Oxide; D012825:Silicon