title: Electrolyte-gated SmCoO3 thin-film transistors exhibiting thickness-dependent large switching ratio at room temperature.
abstract: A Mott transistor that exhibits a large switching ratio of more than two orders at room temperature is demonstrated by using the electric double layer of an ionic liquid for gating on a strongly correlated electron system SmCoO3. From the thickness dependence of the on-state channel current, we estimate the screening length of the SmCoO3 to be ∼5 nm. The good carrier confinement within the Thomas-Fermi screening length demonstrates that the SmCoO3-channel electric double layer transistor is the first candidate for a two-dimensional Mott transistor.
authors: National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki 305-8562, Japan.
authors: Ping-Hua
authors: PH
authors: Xiang
authors: Shutaro
authors: S
authors: Asanuma
authors: Hiroyuki
authors: H
authors: Yamada
authors: Hiroshi
authors: H
authors: Sato
authors: Isao H
authors: IH
authors: Inoue
authors: Hiroshi
authors: H
authors: Akoh
authors: Akihito
authors: A
authors: Sawa
authors: Masashi
authors: M
authors: Kawasaki
authors: Yoshihiro
authors: Y
authors: Iwasa