title: Influence of three-photon absorption on mid-infrared cross-phase modulation in silicon-on-sapphire waveguides.
abstract: The influence of three-photon absorption (3PA) on cross-phase modulation (XPM) effect in the mid-infrared (IR) region is theoretically investigated in silicon-on-sapphire (SOS) waveguides. It is found that the 3PA-induced nonlinear losses in the SOS waveguide will be considerable for the pulse propagation in the wavelength region of 2300 nm-3300 nm when the pump peak intensity is high enough. For the XPM process, the 3PA and 3PA-induced free-carrier effects can affect the spectrum and temporal profiles of the pump and signal pulses for sufficiently high pump peak intensities. Moreover, the XPM-induced frequency shift of signal spectrum is also discussed with different pump peak intensities, and the XPM-induced blue and red shifts are reduced due to 3PA.
authors: State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Science (CAS), Xi'an 710119, China.
authors: Zhaolu
authors: Z
authors: Wang
authors: Hongjun
authors: H
authors: Liu
authors: Nan
authors: N
authors: Huang
authors: Qibing
authors: Q
authors: Sun
authors: Jin
authors: J
authors: Wen
authors: Xuefeng
authors: X
authors: Li
mesh_terms: D000042:Absorption; D000537:Aluminum Oxide / Q000737:chemistry* / Q000528:radiation effects*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007259:Infrared Rays; D017785:Photons; D012825:Silicon / Q000737:chemistry*; D020349:Surface Plasmon Resonance / Q000295:instrumentation*
chemical_list: D000537:Aluminum Oxide; D012825:Silicon