title: Low-temperature solution-processed hydrogen molybdenum and vanadium bronzes for an efficient hole-transport layer in organic electronics.
abstract: A simple one-step method is reported to synthesize low-temperature solution-processed transition metal oxides (TMOs) of molybdenum oxide and vanadium oxide with oxygen vacancies for a good hole-transport layer (HTL). The oxygen vacancy plays an essential role for TMOs when they are employed as HTLs: TMO films with excess oxygen are highly undesirable for their application in organic electronics.
authors: Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, China.
authors: Fengxian
authors: F
authors: Xie
authors: Wallace C H
authors: WC
authors: Choy
authors: Chuandao
authors: C
authors: Wang
authors: Xinchen
authors: X
authors: Li
authors: Shaoqing
authors: S
authors: Zhang
authors: Jianhui
authors: J
authors: Hou
mesh_terms: D004581:Electronics; D006859:Hydrogen / Q000737:chemistry; D008982:Molybdenum / Q000737:chemistry*; D010087:Oxides / Q000737:chemistry*; D011137:Polystyrenes / Q000737:chemistry; D012993:Solar Energy; D012996:Solutions / Q000737:chemistry; D013696:Temperature; D013876:Thiophenes / Q000737:chemistry; D017968:Vanadium Compounds / Q000737:chemistry*
chemical_list: D010087:Oxides; D011137:Polystyrenes; D012996:Solutions; D013876:Thiophenes; D017968:Vanadium Compounds; C533756:poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate); C082290:molybdenum trioxide; D006859:Hydrogen; D008982:Molybdenum; C066075:vanadium pentoxide