title: Decoupling free-carriers contributions from oxygen-vacancy and cation-substitution in extrinsic conducting oxides.
abstract: The intrinsic oxygen-vacancies and the extrinsic dopants are two major fundamental free-carrier sources for the extrinsic conducting oxides, such as Sn-doped In(2)O(3). Yet, the individual contributions of the above two free-carrier sources to the total carrier concentrations have never been unraveled. A carrier-concentration separation model is derived in this work, which can define the individual contributions to the total carrier concentration from the intrinsic oxygen-vacancies and the extrinsic dopants, separately. The individual contributions obtained from the present carrier-concentration separation model are verified by the two-state trapping model, photoluminescence, and positron annihilation lifetime (PAL) spectroscopy. In addition, the oxygen-vacancy formation energy of the Sn:In(2)O(3) thin film is determined to be 0.25 eV by PAL spectroscopy.
authors: Y H
authors: YH
authors: Lin
authors: Y S
authors: YS
authors: Liu
authors: Y C
authors: YC
authors: Lin
authors: Y S
authors: YS
authors: Wei
authors: K S
authors: KS
authors: Liao
authors: K R
authors: KR
authors: Lee
authors: J Y
authors: JY
authors: Lai
authors: H M
authors: HM
authors: Chen
authors: Y C
authors: YC
authors: Jean
authors: C Y
authors: CY
authors: Liu
references: Phys Rev B Condens Matter. 1990 May 15;41(14):9980-9993
references: 9993382