title: CVD growth of large area smooth-edged graphene nanomesh by nanosphere lithography.
abstract: Current etching routes to process large graphene sheets into nanoscale graphene so as to open up a bandgap tend to produce structures with rough and disordered edges. This leads to detrimental electron scattering and reduces carrier mobility. In this work, we present a novel yet simple direct-growth strategy to yield graphene nanomesh (GNM) on a patterned Cu foil via nanosphere lithography. Raman spectroscopy and TEM characterizations show that the as-grown GNM has significantly smoother edges than post-growth etched GNM. More importantly, the transistors based on as-grown GNM with neck widths of 65-75 nm have a near 3-fold higher mobility than those derived from etched GNM with the similar neck widths.
authors: Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing, People's Republic of China.
authors: Min
authors: M
authors: Wang
authors: Lei
authors: L
authors: Fu
authors: Lin
authors: L
authors: Gan
authors: Chaohua
authors: C
authors: Zhang
authors: Mark
authors: M
authors: Rümmeli
authors: Alicja
authors: A
authors: Bachmatiuk
authors: Kai
authors: K
authors: Huang
authors: Ying
authors: Y
authors: Fang
authors: Zhongfan
authors: Z
authors: Liu
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