title: Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on silicon.
abstract: We demonstrate electroabsorption contrast greater than 5 dB over the entire telecommunication S- and C-bands with only 1V drive using a new Ge/SiGe QW epitaxy design approach; further, this is demonstrated with the thinnest Ge/SiGe epitaxy to date, using a virtual substrate only 320-nm-thick. We use an eigenmode expansion method to model the optical coupling between SOI waveguides and both vertically and butt-coupled Ge/SiGe devices, and show that this reduction in thickness is expected to lead to a significant improvement in the insertion loss of waveguide-integrated devices.
authors: Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA. ehe@alumni.stanford.edu
authors: Elizabeth H
authors: EH
authors: Edwards
authors: Leon
authors: L
authors: Lever
authors: Edward T
authors: ET
authors: Fei
authors: Theodore I
authors: TI
authors: Kamins
authors: Zoran
authors: Z
authors: Ikonic
authors: James S
authors: JS
authors: Harris
authors: Robert W
authors: RW
authors: Kelsall
authors: David A B
authors: DA
authors: Miller