title: Contact printing of horizontally-aligned p-type Zn₃P₂ nanowire arrays for rigid and flexible photodetectors.
abstract: Zn(3)P(2) is an important p-type semiconductor with the ability to detect almost all visible and ultraviolet light. By using the simple and efficient contact printing process, we reported the assembly of horizontally-aligned p-type Zn(3)P(2) nanowire arrays to be used as building blocks for high performance photodetectors. Horizontally-aligned Zn(3)P(2) nanowire arrays were first printed on silicon substrate to make thin-film transistors, exhibiting typical p-type transistor behavior with a high on/off ratio of 10(3). Besides, the Zn(3)P(2) nanowire array based devices showed a substantial response to illuminated lights with a wide range of wavelengths and densities. Flexible photodetectors were also fabricated by contact printing of horizontally-aligned Zn(3)P(2) nanowire arrays on flexible PET substrate, showing a comparable performance to the device on rigid silicon substrate.
authors: Michael Grätzel Centre for Mesoscopic Solar Cells, Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
authors: Gang
authors: G
authors: Yu
authors: Bo
authors: B
authors: Liang
authors: Hongtao
authors: H
authors: Huang
authors: Gui
authors: G
authors: Chen
authors: Zhe
authors: Z
authors: Liu
authors: Di
authors: D
authors: Chen
authors: Guozhen
authors: G
authors: Shen