title: Geometry-induced dislocations in coaxial heterostructural nanotubes.
abstract: Highly localized dislocations in GaN/ZnO hetero-nanostructures are generated from the residual strain field by lattice mismatches at two interfaces: between the substrate and hetero-nanostructures, and between the ZnO core and GaN shell. The local strain field is measured using tranmission electron microscopy, and the relationship between the nanostructure morphology and the highly localized dislocations is analyzed by a finite element method.
authors: Department of Materials Science & Engineering and Research Institute of Advanced Materials, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 151-744, Korea.
authors: Aram
authors: A
authors: Yoon
authors: Jun Young
authors: JY
authors: Park
authors: Jong-Myeong
authors: JM
authors: Jeon
authors: Yigil
authors: Y
authors: Cho
authors: Jun Beom
authors: JB
authors: Park
authors: Gyu-Chul
authors: GC
authors: Yi
authors: Kyu Hwan
authors: KH
authors: Oh
authors: Heung Nam
authors: HN
authors: Han
authors: Miyoung
authors: M
authors: Kim
keywords: convergent beam electron diffraction; dislocations in nanostructures; finite element method; gallium nitride; transmission electron microscopy