title: Bending effects on lasing action of semiconductor nanowires.
abstract: High flexibility has been one of advantages for one-dimensional semiconductor nanowires (NWs) in wide application of nanoscale integrated circuits. We investigate the bending effects on lasing action of CdSe NWs. Threshold increases and differential efficiency decreases gradually when we decrease the bending radius step by step. Red shift and mode reduction in the output spectra are also observed. The bending loss of laser oscillation is considerably larger than that of photoluminescence (PL), and both show the exponential relationship with the bending radius. Diameter and mode dependent bending losses are investigated. Furthermore, the polarizations of output can be modulated linearly by bending the NWs into different angles continuously.
authors: State Key Laboratory of Modern Optical Instrumentation, Department of Optical Engineering, Zhejiang University, Hangzhou 310027, China.
authors: Weisong
authors: W
authors: Yang
authors: Yaoguang
authors: Y
authors: Ma
authors: Yipei
authors: Y
authors: Wang
authors: Chao
authors: C
authors: Meng
authors: Xiaoqin
authors: X
authors: Wu
authors: Yu
authors: Y
authors: Ye
authors: Lun
authors: L
authors: Dai
authors: Limin
authors: L
authors: Tong
authors: Xu
authors: X
authors: Liu
authors: Qing
authors: Q
authors: Yang
mesh_terms: D019187:Cadmium Compounds / Q000737:chemistry*; D055119:Elastic Modulus; D019544:Equipment Failure Analysis; D007834:Lasers; D008422:Materials Testing; D043942:Nanotubes / Q000737:chemistry*; D018036:Selenium Compounds / Q000737:chemistry*; D012666:Semiconductors; D013718:Tensile Strength
chemical_list: D019187:Cadmium Compounds; D018036:Selenium Compounds; C058667:cadmium selenide