title: Tuning the vertical location of helical surface states in topological insulator heterostructures via dual-proximity effects.
abstract: In integrating topological insulators (TIs) with conventional materials, one crucial issue is how the topological surface states (TSS) will behave in such heterostructures. We use first-principles approaches to establish accurate tunability of the vertical location of the TSS via intriguing dual-proximity effects. By depositing a conventional insulator (CI) overlayer onto a TI substrate (Bi₂Se or Bi₂Te₃), we demonstrate that, the TSS can float to the top of the CI film, or stay put at the CI/TI interface, or be pushed down deeper into the otherwise structurally homogeneous TI substrate. These contrasting behaviors imply a rich variety of possible quantum phase transitions in the hybrid systems, dictated by key material-specific properties of the CI. These discoveries lay the foundation for accurate manipulation of the real space properties of TSS in TI heterostructures of diverse technological significance.
authors: ICQD, Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China.
authors: Guangfen
authors: G
authors: Wu
authors: Hua
authors: H
authors: Chen
authors: Yan
authors: Y
authors: Sun
authors: Xiaoguang
authors: X
authors: Li
authors: Ping
authors: P
authors: Cui
authors: Cesare
authors: C
authors: Franchini
authors: Jinlan
authors: J
authors: Wang
authors: Xing-Qiu
authors: XQ
authors: Chen
authors: Zhenyu
authors: Z
authors: Zhang
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