title: GaN light emitting diodes with wing-type imbedded contacts.
abstract: A wing-type imbedded electrodes was introduced into the lateral light emitting diode configuration (WTIE-LEDs) to reduce the effect of light shading of electrode in conventional sapphire-based LEDs (CSB-LEDs). The WTIE-LEDs with double-side roughened surface structures not only can eliminate the light shading of electrode and bonding wire, but also increase the light extraction and light output power. Contrast to CSB-LEDs, a 79% enhancement of output intensity in the WTIE-LED was obtained at 100 mA injection current. Similarly, the output power of packaged WTIE-LEDs was enhanced 59% higher compared with the packaged CSB-LEDs at the same injection condition. Therefore, using the imbedded contact to reduce light shading would be a promising prospective for LEDs to achieve high output power.
authors: Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan. huahorng@nchu.edu.tw
authors: Ray-Hua
authors: RH
authors: Horng
authors: Kun-Ching
authors: KC
authors: Shen
authors: Yu-Wei
authors: YW
authors: Kuo
authors: Dong-Sing
authors: DS
authors: Wuu
mesh_terms: D000537:Aluminum Oxide / Q000737:chemistry; D003261:Contact Lenses; D004867:Equipment Design; D005708:Gallium; D006801:Humans; D007204:Indium / Q000737:chemistry; D012666:Semiconductors
chemical_list: D007204:Indium; D005708:Gallium; D000537:Aluminum Oxide; C027235:gallium nitrate