title: Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes.
abstract: Linear polarized electroluminescence was investigated for semipolar (3031) and (3031) InGaN light-emitting diodes (LEDs) with various indium compositions. A high degree of optical polarization was observed for devices on both planes, ranging from 0.37 at 438 nm to 0.79 at 519 nm. The extracted valence band energy separation was consistent with the optical polarization ratios. The effect of anisotropic strain on the valance band structure was studied using k?p method for the above two planes. The theoretical calculations are consistent with the experimental results.
authors: Electrical Computer and Engineering Department, University of California, Santa Barbara, California 93106, USA. yujizhao@engineering.ucsb.edu
authors: Yuji
authors: Y
authors: Zhao
authors: Qimin
authors: Q
authors: Yan
authors: Daniel
authors: D
authors: Feezell
authors: Kenji
authors: K
authors: Fujito
authors: Chris G
authors: CG
authors: Van de Walle
authors: James S
authors: JS
authors: Speck
authors: Steven P
authors: SP
authors: DenBaars
authors: Shuji
authors: S
authors: Nakamura
mesh_terms: D004867:Equipment Design; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry; D008027:Light; D008029:Lighting / Q000295:instrumentation*; D012666:Semiconductors
chemical_list: D007204:Indium; D005708:Gallium; C027235:gallium nitrate