title: Structural and optoelectronic characterization of RF sputtered ZnSnN(2).
abstract: ZnSnN(2), a new earth-abundant semiconductor, is synthesized and characterized for use as a photovoltaic absorber material. Results confirm the predicted orthorhombic Pna2(1) crystal structure in RF sputtered thin films. Additionally, optical measurements reveal a direct bandgap of about 2 eV, which is larger than our calculated bandgap of 1.42 eV due to the Burstein-Moss effect.
authors: Thomas J. Watson Laboratories of Applied Physics, California Institute of Technology, Pasadena, CA 91125, USA.
authors: Lise
authors: L
authors: Lahourcade
authors: Naomi C
authors: NC
authors: Coronel
authors: Kris T
authors: KT
authors: Delaney
authors: Sujeet K
authors: SK
authors: Shukla
authors: Nicola A
authors: NA
authors: Spaldin
authors: Harry A
authors: HA
authors: Atwater