title: Batch-fabricated high-performance graphene Hall elements.
abstract: Hall elements are by far the most widely used magnetic sensor. In general, the higher the mobility and the thinner the active region of the semiconductor used, the better the Hall device. While most common magnetic field sensors are Si-based Hall sensors, devices made from III-V compounds tend to favor over that based on Si. However these devices are more expensive and difficult to manufacture than Si, and hard to be integrated with signal-processing circuits for extending function and enforcing performance. In this article we show that graphene is intrinsically an ideal material for Hall elements which may harness the remarkable properties of graphene, i.e. extremely high carrier mobility and atomically thin active body, to create ideal magnetic sensors with high sensitivity, excellent linearity and remarkable thermal stability.
authors: Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China.
authors: Huilong
authors: H
authors: Xu
authors: Zhiyong
authors: Z
authors: Zhang
authors: Runbo
authors: R
authors: Shi
authors: Honggang
authors: H
authors: Liu
authors: Zhenxing
authors: Z
authors: Wang
authors: Sheng
authors: S
authors: Wang
authors: Lian-Mao
authors: LM
authors: Peng
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