title: Electronic structure modulation for low-power switching.
abstract: We report the transport characteristics of a novel transistor based on the electronic structure modulation of the channel. The gate voltage-controlled current modulation arises from the bandwidth manipulation of a midgap or a near-midgap state. We show that the transistor exhibits a gain and overcomes the 2.3 kBT/decade thermal limit in the inverse subthreshold slope where kB is the Boltzmann constant. The unique device physics also opens up many novel applications.
authors: Department of Electrical and Computer Engineering, University of Iowa, Iowa City, IA, 52242, USA. hraza@engineering.uiowa.edu.
authors: Hassan
authors: H
authors: Raza