title: Crystallization of amorphous Si nanoclusters in SiO(x) films using femtosecond laser pulse annealings.
abstract: The SiO(x) films of various stoichiometries deposited on Si substrates with the use of the co-sputtering from two separate Si and SiO2 targets were annealed by femtosecond laser pulses. Femtosecond laser treatments were applied for crystallization of amorphous silicon nanoclusters in the silicon-rich oxide films. The treatments were carried out with the use of Ti-Sapphire laser with wavelength 800 nm and pulse duration about 30 fs. Regimes of crystallization of amorphous Si nanoclusters in the initial films were found. Ablation thresholds for SiO(x) films of various stoichiometries were discovered. The effect of laser assisted formation of a-Si nanoclusters in the non-stoichiometric dielectric films with relatively low concentration of additional Si atoms was also observed. This approach is applicable for the creation of dielectric films with semiconductor nanoclusters on non-refractory substrates.
authors: A.V. Rzhanov Institute of Semiconductor Physics SB RAS, Lavrent'eva Ave., 13, 630090 Novosibirsk, Russia.
authors: T T
authors: TT
authors: Korchagina
authors: A K
authors: AK
authors: Gutakovsky
authors: L I
authors: LI
authors: Fedina
authors: M A
authors: MA
authors: Neklyudova
authors: V A
authors: VA
authors: Volodin
mesh_terms: D003460:Crystallization / Q000379:methods*; D006244:Hardness; D006358:Hot Temperature; D007834:Lasers; D008422:Materials Testing; D008567:Membranes, Artificial; D008968:Molecular Conformation / Q000528:radiation effects; D049329:Nanostructures / Q000737:chemistry* / Q000528:radiation effects / Q000648:ultrastructure*; D010316:Particle Size; D012825:Silicon / Q000737:chemistry* / Q000528:radiation effects; D012822:Silicon Dioxide / Q000737:chemistry* / Q000528:radiation effects; D013499:Surface Properties / Q000528:radiation effects
chemical_list: D008567:Membranes, Artificial; D012822:Silicon Dioxide; D012825:Silicon