title: Observation of an intermediate band in Sn-doped chalcopyrites with wide-spectrum solar response.
abstract: Nanostrcutured particles and polycrystalline thin films of Sn-doped chalcopyrite are synthesized by newly-developed methods. Surprisingly, Sn doping introduces a narrow partially filled intermediate band (IB) located ~1.7 eV (CuGaS(2)) and ~0.8 eV (CuInS(2)) above the valance band maximum in the forbidden band gap. Diffuse reflection spectra and photoluminescence spectra reveal extra absorption and emission spectra induced by the IBs, which are further supported by first-principle calculations. Wide spectrum solar response greatly enhances photocatalysis, photovoltaics, and photo-induced hydrogen production due to the intermediate band.
authors: CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, P R China.
authors: Chongyin
authors: C
authors: Yang
authors: Mingsheng
authors: M
authors: Qin
authors: Yaoming
authors: Y
authors: Wang
authors: Dongyun
authors: D
authors: Wan
authors: Fuqiang
authors: F
authors: Huang
authors: Jianhua
authors: J
authors: Lin