title: Fast flexible electronics with strained silicon nanomembranes.
abstract: Fast flexible electronics operating at radio frequencies (>1 GHz) are more attractive than traditional flexible electronics because of their versatile capabilities, dramatic power savings when operating at reduced speed and broader spectrum of applications. Transferrable single-crystalline Si nanomembranes (SiNMs) are preferred to other materials for flexible electronics owing to their unique advantages. Further improvement of Si-based device speed implies significant technical and economic advantages. While the mobility of bulk Si can be enhanced using strain techniques, implementing these techniques into transferrable single-crystalline SiNMs has been challenging and not demonstrated. The past approach presents severe challenges to achieve effective doping and desired material topology. Here we demonstrate the combination of strained- NM-compatible doping techniques with self-sustained-strain sharing by applying a strain-sharing scheme between Si and SiGe multiple epitaxial layers, to create strained print-transferrable SiNMs. We demonstrate a new speed record of Si-based flexible electronics without using aggressively scaled critical device dimensions.
authors: Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA.
authors: Han
authors: H
authors: Zhou
authors: Jung-Hun
authors: JH
authors: Seo
authors: Deborah M
authors: DM
authors: Paskiewicz
authors: Ye
authors: Y
authors: Zhu
authors: George K
authors: GK
authors: Celler
authors: Paul M
authors: PM
authors: Voyles
authors: Weidong
authors: W
authors: Zhou
authors: Max G
authors: MG
authors: Lagally
authors: Zhenqiang
authors: Z
authors: Ma