title: Record maximum oscillation frequency in C-face epitaxial graphene transistors.
abstract: The maximum oscillation frequency (fmax) quantifies the practical upper bound for useful circuit operation. We report here an fmax of 70 GHz in transistors using epitaxial graphene grown on the C-face of SiC. This is a significant improvement over Si-face epitaxial graphene used in the prior high-frequency transistor studies, exemplifying the superior electronics potential of C-face epitaxial graphene. Careful transistor design using a high κ dielectric T-gate and self-aligned contacts further contributed to the record-breaking fmax.
authors: School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.
authors: Zelei
authors: Z
authors: Guo
authors: Rui
authors: R
authors: Dong
authors: Partha Sarathi
authors: PS
authors: Chakraborty
authors: Nelson
authors: N
authors: Lourenco
authors: James
authors: J
authors: Palmer
authors: Yike
authors: Y
authors: Hu
authors: Ming
authors: M
authors: Ruan
authors: John
authors: J
authors: Hankinson
authors: Jan
authors: J
authors: Kunc
authors: John D
authors: JD
authors: Cressler
authors: Claire
authors: C
authors: Berger
authors: Walt A
authors: WA
authors: de Heer