title: Sub-10 nm gate length graphene transistors: operating at terahertz frequencies with current saturation.
abstract: Radio-frequency application of graphene transistors is attracting much recent attention due to the high carrier mobility of graphene. The measured intrinsic cut-off frequency (f(T)) of graphene transistor generally increases with the reduced gate length (L(gate)) till L(gate)  =  40 nm, and the maximum measured f(T) has reached 300 GHz. Using ab initio quantum transport simulation, we reveal for the first time that f(T) of a graphene transistor still increases with the reduced L(gate) when L(gate) scales down to a few nm and reaches astonishing a few tens of THz. We observe a clear drain current saturation when a band gap is opened in graphene, with the maximum intrinsic voltage gain increased by a factor of 20. Our simulation strongly suggests it is possible to design a graphene transistor with an extraordinary high f(T) and drain current saturation by continuously shortening L(gate) and opening a band gap.
authors: State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China.
authors: Jiaxin
authors: J
authors: Zheng
authors: Lu
authors: L
authors: Wang
authors: Ruge
authors: R
authors: Quhe
authors: Qihang
authors: Q
authors: Liu
authors: Hong
authors: H
authors: Li
authors: Dapeng
authors: D
authors: Yu
authors: Wai-Ning
authors: WN
authors: Mei
authors: Junjie
authors: J
authors: Shi
authors: Zhengxiang
authors: Z
authors: Gao
authors: Jing
authors: J
authors: Lu