title: Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes.
abstract: A highly flexible and transparent transistor is developed based on an exfoliated MoS2 channel and CVD-grown graphene source/drain electrodes. Introducing the 2D nanomaterials provides a high mechanical flexibility, optical transmittance (∼74%), and current on/off ratio (>10(4)) with an average field effect mobility of ∼4.7 cm(2) V(-1) s(-1), all of which cannot be achieved by other transistors consisting of a MoS2 active channel/metal electrodes or graphene channel/graphene electrodes. In particular, a low Schottky barrier (∼22 meV) forms at the MoS2 /graphene interface, which is comparable to the MoS2 /metal interface. The high stability in electronic performance of the devices upon bending up to ±2.2 mm in compressive and tensile modes, and the ability to recover electrical properties after degradation upon annealing, reveal the efficacy of using 2D materials for creating highly flexible and transparent devices.
authors: School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-Dong), Buk-Gu, Gwangju 500-712, Korea.
authors: Jongwon
authors: J
authors: Yoon
authors: Woojin
authors: W
authors: Park
authors: Ga-Yeong
authors: GY
authors: Bae
authors: Yonghun
authors: Y
authors: Kim
authors: Hun Soo
authors: HS
authors: Jang
authors: Yujun
authors: Y
authors: Hyun
authors: Sung Kwan
authors: SK
authors: Lim
authors: Yung Ho
authors: YH
authors: Kahng
authors: Woong-Ki
authors: WK
authors: Hong
authors: Byoung Hun
authors: BH
authors: Lee
authors: Heung Cho
authors: HC
authors: Ko
keywords: flexible electronics; graphene; molybdenum disulfide; transistors; transparent devices