title: Effects of pulsing and interfacial potentials on tellurium-organic heterostructured films.
abstract: Polycrystalline thin films of tellurium and organic semiconductor molecules are paired in heterostructured field-effect transistors built on Si/SiO2 substrates. While charge carrier mobilities can exceed 1 cm(2)/(V s), there is only a limited gate voltage range over which the current is modulated. We employ continuous and pulsed measurements on transistors to explore the influence of charge equilibration time on device behavior, finding that pulsed gating improves output characteristics. We also use surface potential measurements to investigate the interfacial vacuum level offset between materials, and we modify the interlayer potential profile by interposing statically charged dielectric layers on the silicon dioxide. We show that interfacial fields determine the gate voltage range over which Te shows a field effect in heterostructures with organic semiconductors and that modification of these fields can extend this range.
authors: Department of Materials Science and Engineering and Department of Chemistry, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland 21218, USA.
authors: Robert M
authors: RM
authors: Ireland
authors: Thomas J
authors: TJ
authors: Dawidczyk
authors: Patrick
authors: P
authors: Cottingham
authors: Tyrel
authors: T
authors: McQueen
authors: Gary
authors: G
authors: Johns
authors: Nina
authors: N
authors: Markovic
authors: Lushuai
authors: L
authors: Zhang
authors: Padma
authors: P
authors: Gopalan
authors: Howard E
authors: HE
authors: Katz