title: High k nanophase zinc oxide on biomimetic silicon nanotip array as supercapacitors.
abstract: A 3D trenched-structure metal-insulator-metal (MIM) nanocapacitor array with an ultrahigh equivalent planar capacitance (EPC) of ~300 μF cm(-2) is demonstrated. Zinc oxide (ZnO) and aluminum oxide (Al2O3) bilayer dielectric is deposited on 1 μm high biomimetic silicon nanotip (SiNT) substrate using the atomic layer deposition method. The large EPC is achieved by utilizing the large surface area of the densely packed SiNT (!5 × 10(10) cm(-2)) coated conformally with an ultrahigh dielectric constant of ZnO. The EPC value is 30 times higher than those previously reported in metal-insulator-metal or metal-insulator-semiconductor nanocapacitors using similar porosity dimensions of the support materials.
authors: Center for Condensed Matter Sciences, National Taiwan University, Taipei 106, Taiwan.
authors: Hsieh-Cheng
authors: HC
authors: Han
authors: Cheong-Wei
authors: CW
authors: Chong
authors: Sheng-Bo
authors: SB
authors: Wang
authors: Dawei
authors: D
authors: Heh
authors: Chi-Ang
authors: CA
authors: Tseng
authors: Yi-Fan
authors: YF
authors: Huang
authors: Surojit
authors: S
authors: Chattopadhyay
authors: Kuei-Hsien
authors: KH
authors: Chen
authors: Chi-Feng
authors: CF
authors: Lin
authors: Jiun-Haw
authors: JH
authors: Lee
authors: Li-Chyong
authors: LC
authors: Chen
mesh_terms: D040761:Biomimetic Materials; D025802:Electric Capacitance; D008670:Metals / Q000737:chemistry; D049329:Nanostructures / Q000737:chemistry; D010316:Particle Size; D016062:Porosity; D012825:Silicon / Q000737:chemistry; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D008670:Metals; D015034:Zinc Oxide; D012825:Silicon