title: Effect of temperature on the characteristics of silicon nanowire transistor.
abstract: This paper presents the temperature characteristics of silicon nanowire transistors (SiNWTs) and examines the effect of temperature on transfer characteristics, threshold voltage, I(ON)/I(OFF) ratio, drain-induced barrier lowering (DIBL), and sub-threshold swing (SS). The (MuGFET) simulation tool was used to investigate the temperature characteristics of a transistor. The findings reveal the negative effect of higher working temperature on the use of SiNWTs in electronic circuits, such as digital circuits and amplifiers circuits, because of the lower I(ON)/I(OFF) ratio, higher DIBL, and higher SS at higher temperature. Moreover, the ON state is the optimum condition for using a transistor as a temperature nano-sensor.
authors: Collaborative Microelectronic Design Excellence Centre (CEDEC), Engineering Campus, University Science, 14300, Nibong Tebal, Penang, Malaysia.
authors: Yasir
authors: Y
authors: Hashim
authors: Othman
authors: O
authors: Sidek