title: High-energy-density sol-gel thin film based on neat 2-cyanoethyltrimethoxysilane.
abstract: Hybrid organic-inorganic sol-gel dielectric thin films from a neat 2-cyanoethyltrimethoxysilane (CNETMS) precursor have been fabricated and their permittivity, dielectric strength, and energy density characterized. CNETMS sol-gel films possess compact, polar cyanoethyl groups and exhibit a relative permittivity of 20 at 1 kHz and breakdown strengths ranging from 650 V/μm to 250 V/μm for film thicknesses of 1.3 to 3.5 μm. Capacitors based on CNETMS films exhibit extractable energy densities of 7 J/cm(3) at 300 V/μm, as determined by charge-discharge and polarization-electric field measurements, as well as an energy extraction efficiency of ~91%. The large extractable energy resulting from the linear dielectric polarization behavior suggests that CNETMS films are promising sol-gel materials for pulsed power applications.
authors: School of Chemistry and Biochemistry, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.
authors: Yunsang
authors: Y
authors: Kim
authors: Mohanalingam
authors: M
authors: Kathaperumal
authors: O'Neil L
authors: OL
authors: Smith
authors: Ming-Jen
authors: MJ
authors: Pan
authors: Ye
authors: Y
authors: Cai
authors: Kenneth H
authors: KH
authors: Sandhage
authors: Joseph W
authors: JW
authors: Perry
mesh_terms: D025802:Electric Capacitance; D004560:Electricity; D008422:Materials Testing; D044367:Phase Transition; D012821:Silanes / Q000737:chemistry*
chemical_list: D012821:Silanes; C071717:trimethoxysilane