title: Blue light emission from the heterostructured ZnO/InGaN/GaN.
abstract: ZnO/InGaN/GaN heterostructured light-emitting diodes (LEDs) were fabricated by molecular beam epitaxy and atomic layer deposition. InGaN films consisted of an Mg-doped InGaN layer, an undoped InGaN layer, and a Si-doped InGaN layer. Current-voltage characteristic of the heterojunction indicated a diode-like rectification behavior. The electroluminescence spectra under forward biases presented a blue emission accompanied by a broad peak centered at 600 nm. With appropriate emission intensity ratio, the heterostructured LEDs had potential application in white LEDs. Moreover, a UV emission and an emission peak centered at 560 nm were observed under reverse bias.
authors: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, People's Republic of China. H.Wu@whu.edu.cn.
authors: Ti
authors: T
authors: Wang
authors: Hao
authors: H
authors: Wu
authors: Zheng
authors: Z
authors: Wang
authors: Chao
authors: C
authors: Chen
authors: Chang
authors: C
authors: Liu