title: Magnetic susceptibility of doped Si nanowhiskers.
abstract: The present paper deals with studies of magnetic properties of Si(B) whiskers with large boron impurity concentration of up to 1-5% in the range of magnetic fields (0.3-4.0) kOe and temperatures of 4.2-300 K. In particular, magnetic susceptibility of whiskers has been investigated. The results obtained in the temperature range of 77-300 K have shown that magnetic susceptibility of whiskers substantially differs from that of bulk Si, which is revealed in the two significant peculiarities: (1) a substantial paramagnetic contribution into whisker magnetization and magnetic susceptibility; (2) a non-linear dependency of magnetization on magnetic field intensity. These facts indicate an existence of magnetic ordering in whiskers. The observed magnetization hysteresis at 4.2 K confirms the above supposition. Possible reasons of the observed effects have been discussed.
authors: Lviv Polytechnic National University, 1 Kotliarevsky Street, 79013 Lviv, Ukraine.
authors: A A
authors: AA
authors: Druzhinin
authors: I P
authors: IP
authors: Ostrovskii
authors: Yu M
authors: YM
authors: Khoverko
authors: Iu R
authors: IuR
authors: Kogut
authors: S I
authors: SI
authors: Nichkalo
authors: J K
authors: JK
authors: Warchulska
mesh_terms: D060526:Magnetic Fields; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012825:Silicon / Q000737:chemistry*
chemical_list: D012825:Silicon