title: Localized states influence spin transport in epitaxial graphene.
abstract: We developed a spin transport model for a diffusive channel with coupled localized states that result in an effective increase of spin precession frequencies and a reduction of spin relaxation times in the system. We apply this model to Hanle spin precession measurements obtained on monolayer epitaxial graphene on SiC(0001). Combined with newly performed measurements on quasi-free-standing monolayer epitaxial graphene on SiC(0001) our analysis shows that the different values for the diffusion coefficient measured in charge and spin transport measurements on monolayer epitaxial graphene on SiC(0001) and the high values for the spin relaxation time can be explained by the influence of localized states arising from the buffer layer at the interface between the graphene and the SiC surface.
authors: Physics of Nanodevices, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands. t.maassen@rug.nl
authors: T
authors: T
authors: Maassen
authors: J J
authors: JJ
authors: van den Berg
authors: E H
authors: EH
authors: Huisman
authors: H
authors: H
authors: Dijkstra
authors: F
authors: F
authors: Fromm
authors: T
authors: T
authors: Seyller
authors: B J
authors: BJ
authors: van Wees