title: Fabrication and characterization of n-ZnO nanonails array/p(+)-GaN heterojunction diode.
abstract: A novel heterojunctional structure of n-ZnO nanonails array/p(+)-GaN light-emitting diode was fabricated by Chemical Vapor Deposition method. A broad electroluminescence spectrum shows two peaks centered at 435 nm and 478 nm at room temperature, respectively. By comparing the photoluminescence and electroluminescence spectra, together with analyzing the energy band structure of heterojunction light emitting diode, it suggested that the electroluminescence peak located at 435 nm originates from Mg acceptor level of p(+)-GaN layer, whereas the electroluminescence peak located at 478 nm originates from the defects of n-ZnO nanonails array.
authors: State Key Laboratory of Bioelectronics, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China.
authors: G Y
authors: GY
authors: Zhu
authors: G F
authors: GF
authors: Chen
authors: J T
authors: JT
authors: Li
authors: Z L
authors: ZL
authors: Shi
authors: Y
authors: Y
authors: Lin
authors: T
authors: T
authors: Ding
authors: X Y
authors: XY
authors: Xu
authors: J
authors: J
authors: Dai
authors: C X
authors: CX
authors: Xu