title: Effect of electrode materials on AlN-based bipolar and complementary resistive switching.
abstract: We report the complementary resistive switching (CRS) behaviors in aluminum nitride (AlN)-based memory devices as the promising new material system for large-scale integration of passive crossbar arrays. By utilizing different electrodes (Cu, Pt, and TiN), CRS characteristics are demonstrated in both TiN/AlN/Cu/AlN/TiN electrochemical metallization cells and Pt/AlN/TiN/AlN/Pt ionic resistive switching systems. The instability of Pt/AlN/Cu/AlN/Pt based CRS is explained by the relatively small reset voltage caused by the thermal effects enhanced reset process in the corresponding bipolar resistive switching element. It is concluded that the prerequisite for reliable and stable CRS is that the reset voltage of the bipolar resistive switching element must be much larger than half of the set voltage.
authors: Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China.
authors: Chao
authors: C
authors: Chen
authors: Shuang
authors: S
authors: Gao
authors: Guangsheng
authors: G
authors: Tang
authors: Huadong
authors: H
authors: Fu
authors: Guangyue
authors: G
authors: Wang
authors: Cheng
authors: C
authors: Song
authors: Fei
authors: F
authors: Zeng
authors: Feng
authors: F
authors: Pan