title: Observation of nonvolatile resistive memory switching characteristics in Ag/graphene-oxide/Ag devices.
abstract: In this paper, we report highly stable and bipolar resistive switching effects of Ag/Graphene oxide thinfilm/Ag devices. The graphene-oxide (GO) thinfilms were prepared on Ag/SiO2/Si substrates by spin-coating technique. The Ag/GO/Ag devices showed a steady and bipolar resistive switching characteristic. The resistance switching from low resistance state (LRS) and high resistance state (HRS) with the resistance ratio of HRS to LRS of about 10 which was attained at a voltage bias of 0.1 V. Based on the filamentary conduction model, the dominant conduction mechanism of switching effect was well explained. Our results show GO can be a promising candidate for future development of nonvolatile memory devices.
authors: Department of Nanotechnology, School of Nanosciences and Technology, Karunya University, Coimbatore 641114, Tamil Nadu, India.
authors: Gunasekaran
authors: G
authors: Venugopal
authors: Sang-Jae
authors: SJ
authors: Kim
mesh_terms: D016248:Computer Storage Devices; D017097:Electric Impedance; D004867:Equipment Design; D019544:Equipment Failure Analysis; D006108:Graphite / Q000737:chemistry*; D053768:Metal Nanoparticles / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000295:instrumentation*; D010087:Oxides / Q000737:chemistry; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D012834:Silver / Q000737:chemistry*
chemical_list: D010087:Oxides; D012834:Silver; D006108:Graphite