title: On demand shape-selective integration of individual vertical germanium nanowires on a Si(111) substrate via laser-localized heating.
abstract: Semiconductor nanowire (NW) synthesis methods by blanket furnace heating produce structures of uniform size and shape. This study overcomes this constraint by applying laser-localized synthesis on catalytic nanodots defined by electron beam lithography in order to accomplish site- and shape-selective direct integration of vertically oriented germanium nanowires (GeNWs) on a single Si(111) substrate. Since the laser-induced local temperature field drives the growth process, each NW could be synthesized with distinctly different geometric features. The NW shape was dialed on demand, ranging from cylindrical to hexagonal/irregular hexagonal pyramid. Finite difference time domain analysis supported the tunability of the light absorption and scattering spectra via controlling the GeNW shape.
authors: Department of Mechanical Engineering, University of California, Berkeley, California 94720, United States.
authors: Sang-Gil
authors: SG
authors: Ryu
authors: Eunpa
authors: E
authors: Kim
authors: Jae-Hyuck
authors: JH
authors: Yoo
authors: David J
authors: DJ
authors: Hwang
authors: Bin
authors: B
authors: Xiang
authors: Oscar D
authors: OD
authors: Dubon
authors: Andrew M
authors: AM
authors: Minor
authors: Costas P
authors: CP
authors: Grigoropoulos