title: In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots.
abstract: A method to improve the growth repeatability of low-density InAs/GaAs self-assembled quantum dots by molecular beam epitaxy is reported. A sacrificed InAs layer was deposited firstly to determine in situ the accurate parameters of two- to three-dimensional transitions by observation of reflection high-energy electron diffraction patterns, and then the InAs layer annealed immediately before the growth of the low-density InAs quantum dots (QDs). It is confirmed by micro-photoluminescence that control repeatability of low-density QD growth is improved averagely to about 80% which is much higher than that of the QD samples without using a sacrificed InAs layer.
authors: State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P, O, Box 912, Beijing 100083, China. limifeng09@semi.ac.cn.
authors: Mi-Feng
authors: MF
authors: Li
authors: Ying
authors: Y
authors: Yu
authors: Ji-Fang
authors: JF
authors: He
authors: Li-Juan
authors: LJ
authors: Wang
authors: Yan
authors: Y
authors: Zhu
authors: Xiang-Jun
authors: XJ
authors: Shang
authors: Hai-Qiao
authors: HQ
authors: Ni
authors: Zhi-Chuan
authors: ZC
authors: Niu