title: Chemical 3D tomography of 28nm high K metal gate transistor: STEM XEDS experimental method and results.
abstract: A new STEM XEDS tomography technique is proposed thanks to the implementation of multi EDX SDD detectors in analytical TEMs. The technique flow is presented and the first results obtained on a 28nm FDSOI transistor are detailed. The latter are compared with 2D XEDS analysis to demonstrate the interest of the slice extraction in all directions from a large analyzed volume without any 3D overlap effect issues.
authors: STMicroelectronics, 850 rue Jean Monnet F-38926 Crolles Cedex, France. kevin.lepinay@st.com
authors: K
authors: K
authors: Lepinay
authors: F
authors: F
authors: Lorut
authors: R
authors: R
authors: Pantel
authors: T
authors: T
authors: Epicier