title: Microscopic origin of electron accumulation in In2O3.
abstract: Angle-resolved photoemission spectroscopy reveals the presence of a two-dimensional electron gas at the surface of In(2)O(3)(111). Quantized subband states arise within a confining potential well associated with surface electron accumulation. Coupled Poisson-Schrödinger calculations suggest that downward band bending for the conduction band must be much bigger than band bending in the valence band. Surface oxygen vacancies acting as doubly ionized shallow donors are shown to provide the free electrons within this accumulation layer. Identification of the origin of electron accumulation in transparent conducting oxides has significant implications in the realization of devices based on these compounds.
authors: Department of Chemistry, University of Oxford, Inorganic Chemistry Laboratory, South Parks Road, Oxford OX1 3QR, United Kingdom.
authors: K H L
authors: KH
authors: Zhang
authors: R G
authors: RG
authors: Egdell
authors: F
authors: F
authors: Offi
authors: S
authors: S
authors: Iacobucci
authors: L
authors: L
authors: Petaccia
authors: S
authors: S
authors: Gorovikov
authors: P D C
authors: PD
authors: King