title: A disorder induced field effect transistor in bilayer and trilayer graphene.
abstract: We propose using disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the effects of disorder are confined to only one of the graphene layers. This effect is based on the ability of the bias voltage to select which of the graphene layers carries current, and is not tied to the presence of a gap in the density of states. In particular, we demonstrate this effect in models of gapless ABA-stacked trilayer graphene, gapped ABC-stacked trilayer graphene and gapped bilayer graphene.
authors: Department of Physics, Oklahoma State University, Stillwater, OK 74078, USA.
authors: Dongwei
authors: D
authors: Xu
authors: Haiwen
authors: H
authors: Liu
authors: Vincent
authors: V
authors: Sacksteder
authors: Juntao
authors: J
authors: Song
authors: Hua
authors: H
authors: Jiang
authors: Qing-feng
authors: QF
authors: Sun
authors: X C
authors: XC
authors: Xie