title: Ultrathin body poly(3-hexylthiophene) transistors with improved short-channel performance.
abstract: The microstructure and charge transport properties of binary blends of regioregular (rr) and regiorandom (RRa) poly(3-hexylthiophene) (P3HT) are investigated. X-ray diffraction of the blended films is consistent with a vertically separated structure, with rr-P3HT preferentially crystallizing at the semiconductor/dielectric interface. Thin film transistors made with these blended films preserve high field effect mobility with rr-P3HTcontent as low as 5.6%. In these dilute blends, we estimate that the thickness of rr-P3HT in the channel is only a few nanometers. Significantly, as a result of such an ultrathin active layer at the interface, short channel effects due to bulk currents are eliminated, suggesting a new route to fabricate high-performance, short-channel, and reliable organic electronic devices.
authors: Department of Applied Physics, Stanford University, Stanford, California 94305, United States.
authors: Chenchen
authors: C
authors: Wang
authors: Jonathan
authors: J
authors: Rivnay
authors: Scott
authors: S
authors: Himmelberger
authors: Kiarash
authors: K
authors: Vakhshouri
authors: Michael F
authors: MF
authors: Toney
authors: Enrique D
authors: ED
authors: Gomez
authors: Alberto
authors: A
authors: Salleo