title: p-Channel field-effect transistors based on C60 doped with molybdenum trioxide.
abstract: Fullerene (C60) is a well-known n-channel organic semiconductor. We demonstrate that p-channel C60 field-effect transistors are possible by doping with molybdenum trioxide (MoO3). The device performance of the p-channel C60 field-effect transistors, such as mobility, threshold voltage, and on/off ratio is varied in a controlled manner by changing doping concentration. This work demonstrates the utility of charge transfer doping to obtain both n- and p-channel field-effect transistors with a single organic semiconductor.
authors: Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States.
authors: Tae Hoon
authors: TH
authors: Lee
authors: Björn
authors: B
authors: Lüssem
authors: Kwanpyo
authors: K
authors: Kim
authors: Gaurav
authors: G
authors: Giri
authors: Yoshio
authors: Y
authors: Nishi
authors: Zhenan
authors: Z
authors: Bao