title: Polymer peel-off mask for high-resolution surface derivatization, neuron placement and guidance.
abstract: We present a dry lift-off method using a chemically resistant spin-on plastic, polyimide, to pattern surfaces with high accuracy and resolution. Using well-known lithographic and reactive ion etching techniques, the spin-on polymer is patterned over a silicon dioxide surface. The plastic efficiently adheres to the silicon dioxide surface during the chemical modification and is readily lifted-off following the derivatization process, permitting highly reliable surface derivatization. The verticality of the reactive ion etch enables sub-micrometer features to be patterned, down to 0.8 µm. The technique is used to pattern neurons on silicon dioxide surfaces: efficient neuron placement over a 4 mm area is shown for patterns larger than 50 µm while process guidance is shown for 10 µm patterns.
authors: National Research Council of Canada, 1200 Montreal Road, Ottawa, Ontario K1A 0R6, Canada.
authors: Dolores
authors: D
authors: Martinez
authors: Christophe
authors: C
authors: Py
authors: Mike
authors: M
authors: Denhoff
authors: Robert
authors: R
authors: Monette
authors: Tanya
authors: T
authors: Comas
authors: Anthony
authors: A
authors: Krantis
authors: Geoffrey
authors: G
authors: Mealing
mesh_terms: D000818:Animals; D018929:Cell Culture Techniques / Q000379:methods*; D002478:Cells, Cultured; D020099:Coated Materials, Biocompatible / Q000737:chemistry*; D009474:Neurons / Q000502:physiology*; D051381:Rats; D012117:Resins, Synthetic / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry; D013499:Surface Properties
chemical_list: D020099:Coated Materials, Biocompatible; D012117:Resins, Synthetic; C029945:polyimide resin; D012822:Silicon Dioxide