title: Scalable and direct growth of graphene micro ribbons on dielectric substrates.
abstract: Here we report on a scalable and direct growth of graphene micro ribbons on SiO(2) dielectric substrates using a low temperature chemical vapor deposition. Due to the fast annealing at low temperature and dewetting of Ni, continuous few-layer graphene micro ribbons grow directly on bare dielectric substrates through Ni assisted catalytic decomposition of hydrocarbon precursors. These high quality graphene micro ribbons exhibit low sheet resistance of ~700 Ω -2100 Ω, high on/off current ratio of ~3, and high carrier mobility of ~655 cm(2)V(-1)s(-1) at room temperature, all of which have shown significant improvement over other lithography patterned CVD graphene micro ribbons. This direct approach can in principle form graphene ribbons of any arbitrary sizes and geometries. It allows for a feasible methodology towards better integration with semiconductor materials for interconnect electronics and scalable production for graphene based electronic and optoelectronic applications where the electrical gating is the key enabling factor.
authors: Materials Sciences Division and the Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.
authors: Debin
authors: D
authors: Wang
authors: He
authors: H
authors: Tian
authors: Yi
authors: Y
authors: Yang
authors: Dan
authors: D
authors: Xie
authors: Tian-Ling
authors: TL
authors: Ren
authors: Yuegang
authors: Y
authors: Zhang