title: Micro-patterned ZnO semiconductors for high performance thin film transistors via chemical imprinting with a PDMS stamp.
abstract: Chemical imprinting was conducted on ZnO semiconductor films via a chemical reaction at the contact regions between a micro-patterned PDMS stamp and ZnO films. In addition, we applied the chemical imprinting on Li doped ZnO thin films for high performance TFTs fabrication. The representative micro-patterned Li doped ZnO TFTs showed a field effect mobility of 4.2 cm(2) V(-1) s(-1) after sintering at 300 °C.
authors: Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-744, Republic of Korea.
authors: Kieun
authors: K
authors: Seong
authors: Kyongjun
authors: K
authors: Kim
authors: Si Yun
authors: SY
authors: Park
authors: Youn Sang
authors: YS
authors: Kim