title: Synthesis of boron-doped graphene monolayers using the sole solid feedstock by chemical vapor deposition.
abstract: Substitutionally boron-doped monolayer graphene film is grown on a large scale by using a sole phenylboronic acid as the source in a low-pressure chemical vapor deposition system. The B-doped graphene film is a homogeneous monolayer with high crystalline quality, which exhibits a stable p-type doping behavior with a considerably high room-temperature carrier mobility of about 800 cm(2) V(-1) s(-1) .
authors: Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, PR China.
authors: Huan
authors: H
authors: Wang
authors: Yu
authors: Y
authors: Zhou
authors: Di
authors: D
authors: Wu
authors: Lei
authors: L
authors: Liao
authors: Shuli
authors: S
authors: Zhao
authors: Hailin
authors: H
authors: Peng
authors: Zhongfan
authors: Z
authors: Liu