title: Stable hydrogen evolution from CdS-modified CuGaSe2 photoelectrode under visible-light irradiation.
abstract: The photoelectrochemical properties of CuGaSe2 modified by deposition of a thin CdS layer were investigated. The CdS layer formed a p-n junction on the surface of the electrode, improving its photoelectrochemical properties. There was an optimal CdS thickness because of the balance between the charge separation effect and light absorption by CdS. CdS-deposited CuGaSe2 showed high stability under the observed reaction conditions and evolved hydrogen continuously for more than 10 days.
authors: Department of Chemical System Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.
authors: Makoto
authors: M
authors: Moriya
authors: Tsutomu
authors: T
authors: Minegishi
authors: Hiromu
authors: H
authors: Kumagai
authors: Masao
authors: M
authors: Katayama
authors: Jun
authors: J
authors: Kubota
authors: Kazunari
authors: K
authors: Domen