title: High performance amorphous ZnMgO/carbon nanotube composite thin-film transistors with a tunable threshold voltage.
abstract: Here we report the fabrication and characterization of high mobility amorphous ZnMgO/single-walled carbon nanotube composite thin film transistors (TFTs) with a tunable threshold voltage. By controlling the ratio of MgO, ZnO and carbon nanotubes, high performance composite TFTs can be obtained with a field-effect mobility of up to 135 cm(2) V(-1) s(-1), a low threshold voltage of 1 V and a subthreshold swing as small as 200 mV per decade, making it a promising new solution-processed material for high performance functional circuits. A low voltage inverter is demonstrated with a functional frequency exceeding 5 kHz, which is only limited by parasitic capacitance rather than the intrinsic material speed. The overall device performance of the composite TFTs greatly surpasses not only that of the solution-processed TFTs, but also that of the conventional amorphous or polycrystalline silicon TFTs. It therefore has the potential to open up a new avenue to high-performance, solution-processed flexible electronics which could significantly impact the existing applications, and enable a whole new generation of flexible, wearable, or disposable electronics.
authors: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China.
authors: Xingqiang
authors: X
authors: Liu
authors: Wei
authors: W
authors: Liu
authors: Xiangheng
authors: X
authors: Xiao
authors: Chunlan
authors: C
authors: Wang
authors: Zhiyong
authors: Z
authors: Fan
authors: Yongquan
authors: Y
authors: Qu
authors: Bo
authors: B
authors: Cai
authors: Shishang
authors: S
authors: Guo
authors: Jinchai
authors: J
authors: Li
authors: Changzhong
authors: C
authors: Jiang
authors: Xiangfeng
authors: X
authors: Duan
authors: Lei
authors: L
authors: Liao