title: Diameter-Dependent photocurrent in InAsSb nanowire infrared photodetectors.
abstract: Photoconductors using vertical arrays of InAs/InAs(1-x)Sb(x) nanowires with varying Sb composition x have been fabricated and characterized. The spectrally resolved photocurrents are strongly diameter dependent with peaks, which are red-shifted with diameter, appearing for thicker wires. Results from numerical simulations are in good agreement with the experimental data and reveal that the peaks are due to resonant modes that enhance the coupling of light into the wires. Through proper selection of wire diameter, the absorptance can be increased by more than 1 order of magnitude at a specific wavelength compared to a thin planar film with the same amount of material. A maximum 20% cutoff wavelength of 5.7 μm is obtained at 5 K for a wire diameter of 717 nm at a Sb content of x = 0.62, but simulations predict that detection at longer wavelengths can be achieved by increasing the diameter. Furthermore, photodetection in InAsSb nanowire arrays integrated on Si substrates is also demonstrated.
authors: Electrical and Information Technology, Lund University, Lund, Sweden. johannes@eit.lth.se
authors: Johannes
authors: J
authors: Svensson
authors: Nicklas
authors: N
authors: Anttu
authors: Neimantas
authors: N
authors: Vainorius
authors: B Mattias
authors: BM
authors: Borg
authors: Lars-Erik
authors: LE
authors: Wernersson
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008027:Light; D053770:Nanowires / Q000737:chemistry*; D010316:Particle Size; D010777:Photochemistry; D012825:Silicon / Q000737:chemistry; D013499:Surface Properties
chemical_list: D001152:Arsenicals; D007204:Indium; C076773:indium arsenide; D012825:Silicon