title: Nitrogen-doped, boron-doped and undoped multiwalled carbon nanotube/polymer composites in WORM memory devices.
abstract: We report the preparation of write-once-read-many times memory devices using composites of carbon nanotubes and poly(vinyl phenol) sandwiched between Al electrodes. Three types of nanotubes (undoped multiwalled carbon nanotubes, nitrogen-doped multiwalled carbon nanotubes and boron-doped multiwalled carbon nanotubes) are investigated for this application. The OFF to ON state switching threshold is only slightly dependent on nanotube type, but the ON/OFF current ratio depends on both nanotube type and concentration and varies up to 10(6), decreasing for nanotube concentrations larger than 0.50 wt% in the composite.
authors: Departamento de Física, Universidade Federal do Paraná, Caixa Postal 19044, 81531-980 Curitiba-PR, Brazil.
authors: Messai A
authors: MA
authors: Mamo
authors: Alan O
authors: AO
authors: Sustaita
authors: Zikhona N
authors: ZN
authors: Tetana
authors: Neil J
authors: NJ
authors: Coville
authors: Ivo A
authors: IA
authors: Hümmelgen