title: p-Channel oxide thin film transistors using solution-processed copper oxide.
abstract: Cu2O thin films were synthesized on Si (100) substrate with thermally grown 200-nm SiO2 by sol-gel spin coating method and postannealing under different oxygen partial pressure (0.04, 0.2, and 0.9 Torr). The morphology of Cu2O thin films was improved through N2 postannealing before O2 annealing. Under relatively high oxygen partial pressure of 0.9 Torr, the roughness of synthesized films was increased with the formation of CuO phase. Bottom-gated copper oxide (CuxO) thin film transistors (TFTs) were fabricated via conventional photolithography, and the electrical properties of the fabricated TFTs were measured. The resulting Cu2O TFTs exhibited p-channel operation, and field effect mobility of 0.16 cm2/(V s) and on-to-off drain current ratio of ∼1×10(2) were observed in the TFT device annealed at PO2 of 0.04 Torr. This study presented the potential of the solution-based process of the Cu2O TFT with p-channel characteristics for the first time.
authors: Department of Materials Science and Engineering, KAIST, 291, 6 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea.
authors: Sang Yun
authors: SY
authors: Kim
authors: Cheol Hyoun
authors: CH
authors: Ahn
authors: Ju Ho
authors: JH
authors: Lee
authors: Yong Hun
authors: YH
authors: Kwon
authors: Sooyeon
authors: S
authors: Hwang
authors: Jeong Yong
authors: JY
authors: Lee
authors: Hyung Koun
authors: HK
authors: Cho