title: High-performance triethylsilylethynyl anthradithiophene transistors prepared without solvent vapor annealing: the effects of self-assembly during dip-coating.
abstract: Solution-processable small-molecule organic semiconductors have recently attracted significant attention for use as the active channel layers in organic field-effect transistors due to their good intrinsic charge carrier mobility and easy processability. Dip-coating is a good method for optimizing the film morphology and molecular ordering of the small-molecular semiconductors because the drying speed can be quantitatively controlled at the air-solution-substrate contact line. Here, we report the preparation of highly crystalline triethylsilylethynyl-anthradithiophene (TES-ADT) crystal arrays that exhibit an excellent field-effect mobility (up to 1.8 cm(2)/(V s)) via an optimized one-step dip-coating process. High-quality TES-ADT crystals were grown without solvent vapor annealing postprocessing steps, which were previously thought to be essential for improving the morphology, crystallinity, and electrical characteristics of TES-ADT thin films. An interesting correlation between the optimal pull-out rate and the self-assembly tendencies of some soluble acene semiconductors was observed, and the origin of the correlation was investigated. Our work demonstrates an alternative simple approach to achieving highly crystalline TES-ADT thin films, and further proposes a prospective method for optimizing the formation of thin films via the molecular self-assembly of soluble acenes.
authors: Postech Organic Electronics Laboratory, Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of Korea.
authors: Sooji
authors: S
authors: Nam
authors: Jaeyoung
authors: J
authors: Jang
authors: John E
authors: JE
authors: Anthony
authors: Jong-Jin
authors: JJ
authors: Park
authors: Chan Eon
authors: CE
authors: Park
authors: Kinam
authors: K
authors: Kim