title: Defects in semipolar (1122) ZnO grown on (112) LaAlO3/(La,Sr)(Al,Ta)O3 substrate by pulsed laser deposition.
abstract: The microstructure of semipolar [Formula: see text] ZnO deposited on (112) LaAlO3/(La,Sr)(Al,Ta)O3 was investigated by transmission electron microscopy. The ZnO shows an in-plane epitaxial relationship of [Formula: see text] with oxygen-face sense polarity. The misfit strain along [Formula: see text] and [Formula: see text] is relieved through the formation of misfit dislocations with the Burgers vectors [Formula: see text] and [Formula: see text], respectively. The line defects in the semipolar ZnO are predominantly perfect dislocations, and the dislocation density decreases with increasing ZnO thickness as a result of dislocation reactions. Planar defects were observed to lie in the M-plane and extend along 〈0001〉, whereas basal stacking faults were rarely found.
authors: Department of Materials Science and Engineering, National Chiao Tung University, Hsinch, Taiwan.
authors: Jr-Sheng
authors: JS
authors: Tian
authors: Yue-Han
authors: YH
authors: Wu
authors: Chun-Yen
authors: CY
authors: Peng
authors: Kun-An
authors: KA
authors: Chiu
authors: Yi-Sen
authors: YS
authors: Shih
authors: Hien
authors: H
authors: Do
authors: Pei-Yin
authors: PY
authors: Lin
authors: Yen-Teng
authors: YT
authors: Ho
authors: Ying-Hao
authors: YH
authors: Chu
authors: Li
authors: L
authors: Chang