title: Self-assembled incorporation of modulated block copolymer nanostructures in phase-change memory for switching power reduction.
abstract: Phase change memory (PCM), which exploits the phase change behavior of chalcogenide materials, affords tremendous advantages over conventional solid-state memory due to its nonvolatility, high speed, and scalability. However, high power consumption of PCM poses a critical challenge and has been the most significant obstacle to its widespread commercialization. Here, we present a novel approach based on the self-assembly of a block copolymer (BCP) to form a thin nanostructured SiOx layer that locally blocks the contact between a heater electrode and a phase change material. The writing current is decreased 5-fold (corresponding to a power reduction by 1/20) as the occupying area fraction of SiOx nanostructures is increased from a fill factor of 9.1% to 63.6%. Simulation results theoretically explain the current reduction mechanism by localized switching of BCP-blocked phase change materials.
authors: Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea.
authors: Woon Ik
authors: WI
authors: Park
authors: Byoung Kuk
authors: BK
authors: You
authors: Beom Ho
authors: BH
authors: Mun
authors: Hyeon Kook
authors: HK
authors: Seo
authors: Jeong Yong
authors: JY
authors: Lee
authors: Sumio
authors: S
authors: Hosaka
authors: You
authors: Y
authors: Yin
authors: C A
authors: CA
authors: Ross
authors: Keon Jae
authors: KJ
authors: Lee
authors: Yeon Sik
authors: YS
authors: Jung