title: Ambipolar surface conduction in ternary topological insulator Bi₂(Te₁-xSex)₃ nanoribbons.
abstract: We report the composition- and gate voltage-induced tuning of transport properties in chemically synthesized Bi2(Te1-xSex)3 nanoribbons. It is found that increasing Se concentration effectively suppresses the bulk carrier transport and induces semiconducting behavior in the temperature-dependent resistance of Bi2(Te1-xSex)3 nanoribbons when x is greater than ∼10%. In Bi2(Te1-xSex)3 nanoribbons with x ≈ 20%, gate voltage enables ambipolar modulation of resistance (or conductance) in samples with thicknesses around or larger than 100 nm, indicating significantly enhanced contribution in transport from the gapless surface states.
authors: Shenyang National Laboratory for Materials Science, Institute of Metal Research, and International Centre for Materials Physics, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, People's Republic of China.
authors: Zhenhua
authors: Z
authors: Wang
authors: Richard L J
authors: RL
authors: Qiu
authors: Chee Huei
authors: CH
authors: Lee
authors: Zhidong
authors: Z
authors: Zhang
authors: Xuan P A
authors: XP
authors: Gao