title: Three-dimensional in situ photocurrent mapping for nanowire photovoltaics.
abstract: Devices based upon semiconductor nanowires provide many well-known advantages for next-generation photovoltaics, however, limited experimental techniques exist to determine essential electrical parameters within these devices. We present a novel application of a technique based upon two-photon induced photocurrent that provides a submicrometer resolution, three-dimensional reconstruction of photovoltaic parameters. This tool is used to characterize two GaAs nanowire-based devices, revealing the detail of current generation and collection, providing a path toward achieving the promise of nanowire-based photovoltaic devices.
authors: Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT, Australia. p.parkinson1@physics.ox.ac.uk
authors: Patrick
authors: P
authors: Parkinson
authors: Yu-Heng
authors: YH
authors: Lee
authors: Lan
authors: L
authors: Fu
authors: Steffen
authors: S
authors: Breuer
authors: Hark Hoe
authors: HH
authors: Tan
authors: Chennupati
authors: C
authors: Jagadish
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D004553:Electric Conductivity; D005708:Gallium / Q000737:chemistry*; D008422:Materials Testing; D036103:Nanotechnology; D043942:Nanotubes / Q000737:chemistry*; D053770:Nanowires / Q000737:chemistry*; D010316:Particle Size; D012666:Semiconductors
chemical_list: D001152:Arsenicals; C043055:gallium arsenide; D005708:Gallium