title: In situ TEM and energy dispersion spectrometer analysis of chemical composition change in ZnO nanowire resistive memories.
abstract: Resistive random-access memory (ReRAM) has been of wide interest for its potential to replace flash memory in the next-generation nonvolatile memory roadmap. In this study, we have fabricated the Au/ZnO-nanowire/Au nanomemory device by electron beam lithography and, subsequently, utilized in situ transmission electron microscopy (TEM) to observe the atomic structure evolution from the initial state to the low-resistance state (LRS) in the ZnO nanowire. The element mapping of LRS showing that the nanowire was zinc dominant indicating that the oxygen vacancies were introduced after resistance switching. The results provided direct evidence, suggesting that the resistance change resulted from oxygen migration.
authors: Department of Materials Science and Engineering, National Chiao Tung University, Number 1001, University Road, Hsinchu, Taiwan 30010, ROC.
authors: Yu-Ting
authors: YT
authors: Huang
authors: Shih-Ying
authors: SY
authors: Yu
authors: Cheng-Lun
authors: CL
authors: Hsin
authors: Chun-Wei
authors: CW
authors: Huang
authors: Chen-Fang
authors: CF
authors: Kang
authors: Fu-Hsuan
authors: FH
authors: Chu
authors: Jui-Yuan
authors: JY
authors: Chen
authors: Jung-Chih
authors: JC
authors: Hu
authors: Lien-Tai
authors: LT
authors: Chen
authors: Jr-Hau
authors: JH
authors: He
authors: Wen-Wei
authors: WW
authors: Wu