title: Inverse relationship between carrier mobility and bandgap in graphene.
abstract: A frequently stated advantage of gapless graphene is its high carrier mobility. However, when a nonzero bandgap is opened, the mobility drops dramatically. The hardness to achieve high mobility and large on∕off ratio simultaneously limits the development of graphene electronics. To explore the underlying mechanism, we investigated the intrinsic mobility of armchair graphene nanoribbons (AGNRs) under phonon scattering by combining first-principles calculations and a tight-binding analysis. A linear dependence of the effective mass on bandgap was demonstrated to be responsible for the inverse mobility-gap relationship. The deformation-potential constant was found to be determined by the strain dependence of the Fermi energy and the bandgap, resulting in two mobility branches, and is essential for the high mobility of AGNRs. In addition, we showed that the transport polarity of AGNRs can be switched by applying a uniaxial strain.
authors: College of Chemistry and Molecular Engineering, Beijing National Laboratory for Molecular Sciences (BNLMS), and Center for Nanochemistry, Peking University, Beijing 100871, China.
authors: Jinying
authors: J
authors: Wang
authors: Ruiqi
authors: R
authors: Zhao
authors: Mingmei
authors: M
authors: Yang
authors: Zhongfan
authors: Z
authors: Liu
authors: Zhirong
authors: Z
authors: Liu