title: PbSe quantum dot field-effect transistors with air-stable electron mobilities above 7 cm2 V(-1) s(-1).
abstract: PbSe quantum dot (QD) field effect transistors (FETs) with air-stable electron mobilities above 7 cm(2) V(-1) s(-1) are made by infilling sulfide-capped QD films with amorphous alumina using low-temperature atomic layer deposition (ALD). This high mobility is achieved by combining strong electronic coupling (from the ultrasmall sulfide ligands) with passivation of surface states by the ALD coating. A series of control experiments rule out alternative explanations. Partial infilling tunes the electrical characteristics of the FETs.
authors: Department of Chemistry, University of California, Irvine, Irvine, California 92697, United States.
authors: Yao
authors: Y
authors: Liu
authors: Jason
authors: J
authors: Tolentino
authors: Markelle
authors: M
authors: Gibbs
authors: Rachelle
authors: R
authors: Ihly
authors: Craig L
authors: CL
authors: Perkins
authors: Yu
authors: Y
authors: Liu
authors: Nathan
authors: N
authors: Crawford
authors: John C
authors: JC
authors: Hemminger
authors: Matt
authors: M
authors: Law
mesh_terms: D000388:Air; D004867:Equipment Design; D007854:Lead / Q000737:chemistry*; D010316:Particle Size; D045663:Quantum Dots / Q000737:chemistry*; D018036:Selenium Compounds / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D018036:Selenium Compounds; C088065:lead selenide; D007854:Lead