title: Modulation in current density of metal/n-SiC contact by inserting Al2O3 interfacial layer.
abstract: Metal contact to SiC is not easy to modulate since the contact can be influenced by the metal, the termination of the SiC, the doping, and the fabrication process. In this work, we introduce a method by inserting a thin Al2O3 layer between metal and SiC to solve this problem simply but effectively. The Al2O3/n-SiC interface composition was obtained with X-ray photoemission spectroscopy, and the electrical properties of subsequently deposited metal contacts were characterized by current-voltage method. We can clearly demonstrate that the insertion of Al2O3 interfacial layer can modulate the current density effectively and realize the transfer between the Schottky contact and ohmic contact.
authors: State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai, 200433, China. qqsun@fudan.edu.cn.
authors: Shan
authors: S
authors: Zheng
authors: Qing-Qing
authors: QQ
authors: Sun
authors: Wen
authors: W
authors: Yang
authors: Peng
authors: P
authors: Zhou
authors: Hong-Liang
authors: HL
authors: Lu
authors: David Wei
authors: DW
authors: Zhang