title: Single InAs quantum dot grown at the junction of branched gold-free GaAs nanowire.
abstract: We report a new type of single InAs quantum dot (QD) embedded at the junction of gold-free branched GaAs/AlGaAs nanowire (NW) grown on silicon substrate. The photoluminescence intensity of such QD is ~20 times stronger than that from randomly distributed QD grown on the facet of straight NW. Sharp excitonic emission is observed at 4.2 K with a line width of 101 μeV and a vanishing two-photon emission probability of g(2)(0) = 0.031(2). This new nanostructure may open new ways for designing novel quantum optoelectronic devices.
authors: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
authors: Ying
authors: Y
authors: Yu
authors: Mi-Feng
authors: MF
authors: Li
authors: Ji-Fang
authors: JF
authors: He
authors: Yu-Ming
authors: YM
authors: He
authors: Yu-Jia
authors: YJ
authors: Wei
authors: Yu
authors: Y
authors: He
authors: Guo-Wei
authors: GW
authors: Zha
authors: Xiang-Jun
authors: XJ
authors: Shang
authors: Juan
authors: J
authors: Wang
authors: Li-Juan
authors: LJ
authors: Wang
authors: Guo-Wei
authors: GW
authors: Wang
authors: Hai-Qiao
authors: HQ
authors: Ni
authors: Chao-Yang
authors: CY
authors: Lu
authors: Zhi-Chuan
authors: ZC
authors: Niu
mesh_terms: D001152:Arsenicals / Q000737:chemistry; D004867:Equipment Design; D005708:Gallium / Q000737:chemistry; D007204:Indium / Q000737:chemistry; D049329:Nanostructures / Q000737:chemistry*; D036103:Nanotechnology; D053770:Nanowires / Q000737:chemistry*; D045663:Quantum Dots; D012825:Silicon
chemical_list: D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide; D012825:Silicon