title: Improving the charge transport in self-assembled monolayer field-effect transistors: from theory to devices.
abstract: A three-pronged approach has been used to design rational improvements in self-assembled monolayer field-effect transistors: classical molecular dynamics (MD) simulations to investigate atomistic structure, large-scale quantum mechanical (QM) calculations for electronic properties, and device fabrication and characterization as the ultimate goal. The MD simulations reveal the effect of using two-component monolayers to achieve intact dielectric insulating layers and a well-defined semiconductor channel. The QM calculations identify improved conduction paths in the monolayers that consist of an optimum mixing ratio of the components. These results have been used both to confirm the predictions of the calculations and to optimize real devices. Monolayers were characterized with X-ray reflectivity measurements and by electronic characterization of complete devices.
authors.affiliation: Computer-Chemie-Centrum and Interdisciplinary Center for Molecular Materials, University Erlangen-Nürnberg, Nägelsbachstrasse 25, 91052 Erlangen, Germany.
authors.forename: Christof M
authors.initials: CM
authors.lastname: Jäger
authors.forename: Thomas
authors.initials: T
authors.lastname: Schmaltz
authors.forename: Michael
authors.initials: M
authors.lastname: Novak
authors.forename: Artoem
authors.initials: A
authors.lastname: Khassanov
authors.forename: Alexei
authors.initials: A
authors.lastname: Vorobiev
authors.forename: Matthias
authors.initials: M
authors.lastname: Hennemann
authors.forename: Andreas
authors.initials: A
authors.lastname: Krause
authors.forename: Hanno
authors.initials: H
authors.lastname: Dietrich
authors.forename: Dirk
authors.initials: D
authors.lastname: Zahn
authors.forename: Andreas
authors.initials: A
authors.lastname: Hirsch
authors.forename: Marcus
authors.initials: M
authors.lastname: Halik
authors.forename: Timothy
authors.initials: T
authors.lastname: Clark