title: Controlled synthesis of highly crystalline MoS2 flakes by chemical vapor deposition.
abstract: The controlled synthesis of highly crystalline MoS2 atomic layers remains a challenge for the practical applications of this emerging material. Here, we developed an approach for synthesizing MoS2 flakes in rhomboid shape with controlled number of layers by the layer-by-layer sulfurization of MoO2 microcrystals. The obtained MoS2 flakes showed high crystallinity with crystal domain size of ~10 μm, significantly larger than the grain size of MoS2 grown by other methods. As a result of the high crystallinity, the performance of back-gated field effect transistors (FETs) made on these MoS2 flakes was comparable to that of FETs based on mechanically exfoliated flakes. This simple approach opens up a new avenue for controlled synthesis of MoS2 atomic layers and will make this highly crystalline material easily accessible for fundamental aspects and various applications.
authors.affiliation: Key Lab of Organic Optoelectronics & Molecular Engineering, Department of Chemistry, Tsinghua University, Beijing 100084, China.
authors.forename: Xinsheng
authors.initials: X
authors.lastname: Wang
authors.forename: Hongbin
authors.initials: H
authors.lastname: Feng
authors.forename: Yongmin
authors.initials: Y
authors.lastname: Wu
authors.forename: Liying
authors.initials: L
authors.lastname: Jiao