title: Photoluminescence emission and Raman response of monolayer MoS₂, MoSe₂, and WSe₂.
abstract: We mechanically exfoliate mono- and few-layers of the transition metal dichalcogenides molybdenum disulfide, molybdenum diselenide, and tungsten diselenide. The exact number of layers is unambiguously determined by atomic force microscopy and high-resolution Raman spectroscopy. Strong photoluminescence emission is caused by the transition from an indirect band gap semiconductor of bulk material to a direct band gap semiconductor in atomically thin form.
authors.affiliation: Institute of Physics, Chemnitz University of Technology, 09107 Chemnitz, Germany.
authors.forename: Philipp
authors.initials: P
authors.lastname: Tonndorf
authors.forename: Robert
authors.initials: R
authors.lastname: Schmidt
authors.forename: Philipp
authors.initials: P
authors.lastname: Böttger
authors.forename: Xiao
authors.initials: X
authors.lastname: Zhang
authors.forename: Janna
authors.initials: J
authors.lastname: Börner
authors.forename: Andreas
authors.initials: A
authors.lastname: Liebig
authors.forename: Manfred
authors.initials: M
authors.lastname: Albrecht
authors.forename: Christian
authors.initials: C
authors.lastname: Kloc
authors.forename: Ovidiu
authors.initials: O
authors.lastname: Gordan
authors.forename: Dietrich R T
authors.initials: DR
authors.lastname: Zahn
authors.forename: Steffen
authors.initials: S
authors.lastname: Michaelis de Vasconcellos
authors.forename: Rudolf
authors.initials: R
authors.lastname: Bratschitsch
mesh_terms: D008027:Light; D008163:Luminescent Measurements / Q000379:methods*; D008422:Materials Testing; D012542:Scattering, Radiation; D013059:Spectrum Analysis, Raman / Q000379:methods*; D028561:Transition Elements / Q000737:chemistry* / Q000528:radiation effects
chemical_list: D028561:Transition Elements