title: Grain size dependence of surface plasmon enhanced photoluminescence.
abstract: Photoluminescence (PL) in the InGaN quantum well based light-emitting diodes (LED) is greatly mediated through the coupling with the Surface Plasmons (SPs) at the interface of the sputtered Ag film. SPs coupled PL is independently tuned through controlling the grain size of the sputtered Ag films. The grain size of ~50 nm exhibits the maximum light extraction efficiency (LEE) at the wavelength of 460 nm. This grain size agrees with the periodic lattice constant of the grating structure in the calculation, where the momentum mismatch between the SPs and the radiative light can be compensated.
authors.affiliation: Institute for Advanced Chemistry and Materials, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581, Japan. xux1@ms.ifoc.kyushu-u.ac.jp
authors.forename: Xiaoying
authors.initials: X
authors.lastname: Xu
authors.forename: Mitsuru
authors.initials: M
authors.lastname: Funato
authors.forename: Yoichi
authors.initials: Y
authors.lastname: Kawakami
authors.forename: Koichi
authors.initials: K
authors.lastname: Okamoto
authors.forename: Kaoru
authors.initials: K
authors.lastname: Tamada
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D008029:Lighting / Q000295:instrumentation*; D008163:Luminescent Measurements / Q000295:instrumentation*; D010316:Particle Size; D012834:Silver / Q000737:chemistry*; D020349:Surface Plasmon Resonance / Q000295:instrumentation*
chemical_list: D012834:Silver