title: Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm.
abstract: We present a silicon-on-insulator (SOI) based spectrometer platform for a wide operational wavelength range. Both planar concave grating (PCG, also known as echelle grating) and arrayed waveguide grating (AWG) spectrometer designs are explored for operation in the short-wave infrared. In addition, a total of four planar concave gratings are designed to cover parts of the wavelength range from 1510 to 2300 nm. These passive wavelength demultiplexers are combined with GaInAsSb photodiodes. These photodiodes are heterogeneously integrated on SOI with benzocyclobutene (DVS-BCB) as an adhesive bonding layer. The uniformity of the photodiode characteristics and high processing yield, indicate a robust fabrication process. We demonstrate good performance of the miniature spectrometers over all operational wavelengths which paves the way to on-chip absorption spectroscopy in this wavelength range.
authors.affiliation: Photonics Research Group, INTEC Department, Ghent University - IMEC, Sint-Pietersnieuwstraat 41,9000 Ghent, Belgium. eva.ryckeboer@intec.ugent.be
authors.forename: E
authors.initials: E
authors.lastname: Ryckeboer
authors.forename: A
authors.initials: A
authors.lastname: Gassenq
authors.forename: M
authors.initials: M
authors.lastname: Muneeb
authors.forename: N
authors.initials: N
authors.lastname: Hattasan
authors.forename: S
authors.initials: S
authors.lastname: Pathak
authors.forename: L
authors.initials: L
authors.lastname: Cerutti
authors.forename: J B
authors.initials: JB
authors.lastname: Rodriguez
authors.forename: E
authors.initials: E
authors.lastname: Tournié
authors.forename: W
authors.initials: W
authors.lastname: Bogaerts
authors.forename: R
authors.initials: R
authors.lastname: Baets
authors.forename: G
authors.initials: G
authors.lastname: Roelkens