title: Facile synthesis of large-area ultrathin hexagonal BN films via self-limiting growth at the molten B₂O₃ surface.
abstract: A self-limiting growth process based on the interface-controlled reaction of molten boron oxide (B2 O3 ) with ammonia (NH3 ) is demonstrated for the facile and lost-cost synthesis of ultrathin (20-30 nm) crystalline hexagonal boron nitride (h-BN) films over large areas. The as-grown h-BN films are of high quality, being densely continuous, uniform and smooth, and highly transparent over a broad wavelength range.
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, PR China.
authors.forename: Xiaoxia
authors.initials: X
authors.lastname: Yang
authors.forename: Zixuan
authors.initials: Z
authors.lastname: Guan
authors.forename: Min
authors.initials: M
authors.lastname: Zeng
authors.forename: Jiake
authors.initials: J
authors.lastname: Wei
authors.forename: Wenlong
authors.initials: W
authors.lastname: Wang
authors.forename: Xuedong
authors.initials: X
authors.lastname: Bai