title: High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization.
abstract: We demonstrate a high-speed silicon Mach-Zehnder modulator (MZM) with low insertion loss, based on the carrier depletion effect in a lateral PN junction. A 1.9 dB on-chip insertion loss and a VπLπ < 2 V·cm were achieved in an MZM with a 750 μm-long phase shifter by properly choosing the doping concentration and precisely locating the junction. High-speed modulations up to 45-60 Gbit/s have been demonstrated with an additional 1.6 dB optical loss, indicating a total insertion loss of 3.5 dB. A high extinction ratio of 7.5 dB was also realized at the bit rate of 50 Gbit/s with an acceptable insertion loss of 6.5 dB.
authors.affiliation: State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.
authors.forename: Xi
authors.initials: X
authors.lastname: Xiao
authors.forename: Hao
authors.initials: H
authors.lastname: Xu
authors.forename: Xianyao
authors.initials: X
authors.lastname: Li
authors.forename: Zhiyong
authors.initials: Z
authors.lastname: Li
authors.forename: Tao
authors.initials: T
authors.lastname: Chu
authors.forename: Yude
authors.initials: Y
authors.lastname: Yu
authors.forename: Jinzhong
authors.initials: J
authors.lastname: Yu
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D007368:Interferometry / Q000295:instrumentation*; D012031:Refractometry / Q000295:instrumentation*; D013685:Telecommunications / Q000295:instrumentation*