title: Nitride-based micron-scale hexagonal pyramids array vertical light emitting diodes by N-polar wet etching.
abstract: In this work, we reported the fabrication of nitride-based hexagonal pyramids array (HPA) vertical-injection light emitting diodes (V-LEDs) by N-polar wet etching. The performance of HPA V-LEDs devices was significantly improved with 30% higher internal quantum efficiency compared with conventional roughened broad area V-LEDs. The simulated extraction efficiency by finite difference time domain method was 20% higher than typical roughened V-LEDs. The reversed leakage current of HPA V-LEDs was reduced due to better crystal quality, which was confirmed by conductive atomic force microscopy measurement. Furthermore, the efficiency droop for HPA V-LEDs were substantially alleviated.
authors.affiliation: Research and Development Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
authors.forename: Jun
authors.initials: J
authors.lastname: Ma
authors.forename: Liancheng
authors.initials: L
authors.lastname: Wang
authors.forename: Zhiqiang
authors.initials: Z
authors.lastname: Liu
authors.forename: Guodong
authors.initials: G
authors.lastname: Yuan
authors.forename: Xiaoli
authors.initials: X
authors.lastname: Ji
authors.forename: Ping
authors.initials: P
authors.lastname: Ma
authors.forename: Junxi
authors.initials: J
authors.lastname: Wang
authors.forename: Xiaoyan
authors.initials: X
authors.lastname: Yi
authors.forename: Guohong
authors.initials: G
authors.lastname: Wang
authors.forename: Jinmin
authors.initials: J
authors.lastname: Li
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D008029:Lighting / Q000295:instrumentation*; D009584:Nitrogen / Q000737:chemistry*; D012666:Semiconductors; D017155:Wettability
chemical_list: D009584:Nitrogen