title: Measuring the refractive index around intersubband transition resonance in GaN/AlN multi quantum wells.
abstract: We present the direct measurement of the refractive index distribution (spectral dispersion) arising from an intersubband transition in GaN/AlN multi quantum wells structure. The measurement is carried out through a novel interferometric technique. The measured interferogram yields a change in the refractive index varying from -5 × 10(-3) to 6 × 10(-3) as a function of the wavelength, introduced by the intersubband resonance at 1.5 µm. These results compare well with those derived using Kramers-Kronig transform of the measured absorption spectrum.
authors.affiliation: Department of electrical engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel. eladg1@tx.technion.ac.il
authors.forename: Elad
authors.initials: E
authors.lastname: Gross
authors.forename: Amir
authors.initials: A
authors.lastname: Nevet
authors.forename: Asaf
authors.initials: A
authors.lastname: Pesach
authors.forename: Eva
authors.initials: E
authors.lastname: Monroy
authors.forename: Shmuel E
authors.initials: SE
authors.lastname: Schacham
authors.forename: Meir
authors.initials: M
authors.lastname: Orenstein
authors.forename: Mordechai
authors.initials: M
authors.lastname: Segev
authors.forename: Gad
authors.initials: G
authors.lastname: Bahir
mesh_terms: D000465:Algorithms; D017607:Aluminum Compounds / Q000737:chemistry*; D003198:Computer Simulation; D005708:Gallium / Q000737:chemistry*; D008962:Models, Theoretical; D011789:Quantum Theory; D012031:Refractometry / Q000379:methods*
chemical_list: D017607:Aluminum Compounds; C473348:gallium nitride; C052045:aluminum nitride; D005708:Gallium