title: PNP PIN bipolar phototransistors for high-speed applications built in a 180 nm CMOS process.
abstract: This work reports on three speed optimized pnp bipolar phototransistors build in a standard 180 nm CMOS process using a special starting wafer. The starting wafer consists of a low doped p epitaxial layer on top of the p substrate. This low doped p epitaxial layer leads to a thick space-charge region between base and collector and thus to a high -3 dB bandwidth at low collector-emitter voltages. For a further increase of the bandwidth the presented phototransistors were designed with small emitter areas resulting in a small base-emitter capacitance. The three presented phototransistors were implemented in sizes of 40 × 40 μm2and 100 × 100 μm2. Optical DC and AC measurements at 410 nm, 675 nm and 850 nm were done for phototransistor characterization. Due to the speed optimized design and the layer structure of the phototransistors, bandwidths up to 76.9 MHz and dynamic responsivities up to 2.89 A/W were achieved. Furthermore simulations of the electric field strength and space-charge regions were done.
authors.affiliation: Institute of Electrodynamics, Microwave and Circuit Engineering, Vienna University of Technology, Gusshausstr. 25/354, 1040 Vienna, Austria.
authors.forename: P
authors.initials: P
authors.lastname: Kostov
authors.forename: W
authors.initials: W
authors.lastname: Gaberl
authors.forename: M
authors.initials: M
authors.lastname: Hofbauer
authors.forename: H
authors.initials: H
authors.lastname: Zimmermann
keywords: Integrated phototransistor; Light detector; PIN; PNP; Photodetector; Silicon