title: High-performance surface acoustic wave resonators in the 1 to 3 GHz range using a ScAlN/6H-SiC structure.
abstract: This paper describes application of Sc-doped AlN (ScAlN) to wideband SAW devices in the 1 to 3 GHz range. First, it is shown theoretically that large SAW velocity and electromechanical coupling factor are simultaneously achievable when the ScAlN film is combined with a base substrate with extremely high acoustic wave velocities, such as diamond and SiC. Next, SAW delay lines are fabricated on the ScAlN/6H-SiC structure, and reasonable agreement between the theory and experiment is obtained. Finally, one-port SAW resonators are fabricated on the structure, and it is shown that high-performance is achievable in the 1 to 3 GHz range by use of the structure.
authors.affiliation: Graduate School of Engineering, Chiba University, Chiba, Japan. k.hashimoto@ieee.org
authors.forename: Ken-ya
authors.initials: KY
authors.lastname: Hashimoto
authors.forename: Shuhei
authors.initials: S
authors.lastname: Sato
authors.forename: Akihiko
authors.initials: A
authors.lastname: Teshigahara
authors.forename: Takuya
authors.initials: T
authors.lastname: Nakamura
authors.forename: Kazuhiko
authors.initials: K
authors.lastname: Kano