title: Quantitative dopant distributions in GaAs nanowires using atom probe tomography.
abstract: Controllable doping of semiconductor nanowires is critical to realize their proposed applications, however precise and reliable characterization of dopant distributions remains challenging. In this article, we demonstrate an atomic-resolution three-dimensional elemental mapping of pristine semiconductor nanowires on growth substrates by using atom probe tomography to tackle this major challenge. This highly transferrable method is able to analyze the full diameter of a nanowire, with a depth resolution better than 0.17 nm thanks to an advanced reconstruction method exploiting the specimen's crystallography, and an enhanced chemical sensitivity of better than 8-fold increase in the signal-to-noise ratio.
authors.affiliation: School of Physics, The University of Sydney, NSW 2006, Australia.
authors.forename: Sichao
authors.initials: S
authors.lastname: Du
authors.forename: Timothy
authors.initials: T
authors.lastname: Burgess
authors.forename: Baptiste
authors.initials: B
authors.lastname: Gault
authors.forename: Qiang
authors.initials: Q
authors.lastname: Gao
authors.forename: Peite
authors.initials: P
authors.lastname: Bao
authors.forename: Li
authors.initials: L
authors.lastname: Li
authors.forename: Xiangyuan
authors.initials: X
authors.lastname: Cui
authors.forename: Wai
authors.initials: W
authors.lastname: Kong Yeoh
authors.forename: Hongwei
authors.initials: H
authors.lastname: Liu
authors.forename: Lan
authors.initials: L
authors.lastname: Yao
authors.forename: Anna V
authors.initials: AV
authors.lastname: Ceguerra
authors.forename: Hark
authors.initials: H
authors.lastname: Hoe Tan
authors.forename: Chennupati
authors.initials: C
authors.lastname: Jagadish
authors.forename: Simon P
authors.initials: SP
authors.lastname: Ringer
authors.forename: Rongkun
authors.initials: R
authors.lastname: Zheng
keywords: Atom probe tomography; Dopants; Nanowires