title: A 340-nm-band ultraviolet laser diode composed of GaN well layers.
abstract: We have demonstrated the laser operation of a short-wavelength ultraviolet laser diode with multiple-quantum-wells composed of GaN well layers. The laser action has been achieved in 340-nm-band far from the wavelength corresponding to GaN band gap under the pulsed current mode at room temperature. The device has been realized on the Al(0.2)Ga(0.8)N underlying layer. The AlN mole fraction of the underlying layer is 0.1 lower than that of the underlying layer which was used for the previously reported 342 nm laser diode. These results provide a chance to the next step for a shorter-wavelength ultraviolet laser diode.
authors.affiliation: Hamamatsu Photonics K.K., 5000 Hirakuchi, Hamamatsu 434-8601, Japan. yoji@crl.hpk.co.jp
authors.forename: Yoji
authors.initials: Y
authors.lastname: Yamashita
authors.forename: Masakazu
authors.initials: M
authors.lastname: Kuwabara
authors.forename: Kousuke
authors.initials: K
authors.lastname: Torii
authors.forename: Harumasa
authors.initials: H
authors.lastname: Yoshida
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D054023:Lasers, Semiconductor
chemical_list: C473348:gallium nitride; D005708:Gallium