title: A graphene-based hot electron transistor.
abstract: We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call graphene base transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the wafer scale with standard silicon technology. The state of the GBTs can be switched by a potential applied to the transistor base, which is made of graphene. Transfer characteristics of the GBTs show ON/OFF current ratios exceeding 10(4).
authors.affiliation: KTH Royal Institute of Technology, School of Information and Communication Technology, Kista, Sweden.
authors.forename: Sam
authors.initials: S
authors.lastname: Vaziri
authors.forename: Grzegorz
authors.initials: G
authors.lastname: Lupina
authors.forename: Christoph
authors.initials: C
authors.lastname: Henkel
authors.forename: Anderson D
authors.initials: AD
authors.lastname: Smith
authors.forename: Mikael
authors.initials: M
authors.lastname: Ostling
authors.forename: Jarek
authors.initials: J
authors.lastname: Dabrowski
authors.forename: Gunther
authors.initials: G
authors.lastname: Lippert
authors.forename: Wolfgang
authors.initials: W
authors.lastname: Mehr
authors.forename: Max C
authors.initials: MC
authors.lastname: Lemme
mesh_terms: D004583:Electrons; D004867:Equipment Design; D006108:Graphite / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry*; D036103:Nanotechnology; D012825:Silicon / Q000737:chemistry; D014173:Transistors, Electronic
chemical_list: D006108:Graphite; D012825:Silicon