title: Resolution limits of electron-beam lithography toward the atomic scale.
abstract: We investigated electron-beam lithography with an aberration-corrected scanning transmission electron microscope. We achieved 2 nm isolated feature size and 5 nm half-pitch in hydrogen silsesquioxane resist. We also analyzed the resolution limits of this technique by measuring the point-spread function at 200 keV. Furthermore, we measured the energy loss in the resist using electron-energy-loss spectroscopy.
authors.affiliation: Electrical Engineering and Computer Science Department, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
authors.forename: Vitor R
authors.initials: VR
authors.lastname: Manfrinato
authors.forename: Lihua
authors.initials: L
authors.lastname: Zhang
authors.forename: Dong
authors.initials: D
authors.lastname: Su
authors.forename: Huigao
authors.initials: H
authors.lastname: Duan
authors.forename: Richard G
authors.initials: RG
authors.lastname: Hobbs
authors.forename: Eric A
authors.initials: EA
authors.lastname: Stach
authors.forename: Karl K
authors.initials: KK
authors.lastname: Berggren
mesh_terms: D004581:Electronics; D004583:Electrons; D006859:Hydrogen / Q000737:chemistry; D017348:Microscopy, Electron, Scanning Transmission; D017646:Organosilicon Compounds / Q000737:chemistry*; D046590:Spectroscopy, Electron Energy-Loss
chemical_list: C512088:1,3-bis(1,1,3,3,5,5-hexaethoxy-1,3,5-trisilacyclohexyl)propane; D017646:Organosilicon Compounds; D006859:Hydrogen