title: Electronic and transport properties of unbalanced sublattice N-doping in graphene.
abstract: Using both first-principles techniques and a real-space Kubo-Greenwood approach, electronic and transport properties of nitrogen-doped graphene with a single sublattice preference are investigated. Such a breaking of the sublattice symmetry leads to the appearance of a true band gap in graphene electronic spectrum even for a random distribution of the N dopants. More surprisingly, a natural spatial separation of both types of charge carriers at the band edge is predicted, leading to a highly asymmetric electronic transport. Both the presence of a band gap, allowing large on/off ratio, and an asymmetric transport pave a new route toward efficient graphene-based field-effect transistors.
authors.affiliation: Institute of Condensed Matter and Nanosciences (IMCN), Université catholique de Louvain (UCL), 1348 Louvain-la-Neuve, Belgium. aurelien.lherbier@uclouvain.be
authors.forename: Aurélien
authors.initials: A
authors.lastname: Lherbier
authors.forename: Andrés Rafael
authors.initials: AR
authors.lastname: Botello-Méndez
authors.forename: Jean-Christophe
authors.initials: JC
authors.lastname: Charlier
mesh_terms: D004579:Electron Transport; D004581:Electronics; D006108:Graphite / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry*; D009584:Nitrogen / Q000737:chemistry; D010316:Particle Size; D014173:Transistors, Electronic
chemical_list: D006108:Graphite; D009584:Nitrogen