title: High-performance nanocomposite based memristor with controlled quantum dots as charge traps.
abstract: We report a novel approach to improve the resistive switching performance of semiconductor nanorod (NR) arrays, by introducing ceria (CeO2) quantum dots (QDs) as surface charge trappers. The vertically aligned zinc oxide (ZnO) (NR) arrays were grown on transparent conductive glass by electrochemical deposition while CeO2 QDs were prepared by a solvothermal method. Subsequently, the as-prepared CeO2 QDs were embedded into a ZnO NR array by dip coating to obtain a CeO2-ZnO nanocomposite. Interestingly, such a device exhibits excellent resistive switching properties with much higher ON/OFF ratios, better uniformity, and stability over the pure ZnO and CeO2 nanostructures. The origin of resistive switching was studied and the role of heterointerface was discussed.
authors.affiliation: School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, NSW, Australia.
authors.forename: Adnan
authors.initials: A
authors.lastname: Younis
authors.forename: Dewei
authors.initials: D
authors.lastname: Chu
authors.forename: Xi
authors.initials: X
authors.lastname: Lin
authors.forename: Jiabao
authors.initials: J
authors.lastname: Yi
authors.forename: Feng
authors.initials: F
authors.lastname: Dang
authors.forename: Sean
authors.initials: S
authors.lastname: Li
mesh_terms: D004563:Electrochemistry / Q000379:methods; D053761:Nanocomposites / Q000737:chemistry; D049329:Nanostructures / Q000737:chemistry*; D036103:Nanotechnology / Q000379:methods; D045663:Quantum Dots; D015034:Zinc Oxide / Q000737:chemistry
chemical_list: D015034:Zinc Oxide