title: Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer.
abstract: This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN. Each thin n-GaN layer sandwiched in the PNPNP-GaN structure is completely depleted due to the built-in electric field in the PNPNP-GaN junctions, and the ionized donors in these n-GaN layers serve as the hole spreaders. As a result, the electrical performance of the proposed device is improved and the optical output power and EQE are enhanced.
authors.affiliation: LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore.
authors.forename: Zi-Hui
authors.initials: ZH
authors.lastname: Zhang
authors.forename: Swee Tiam
authors.initials: ST
authors.lastname: Tan
authors.forename: Wei
authors.initials: W
authors.lastname: Liu
authors.forename: Zhengang
authors.initials: Z
authors.lastname: Ju
authors.forename: Ke
authors.initials: K
authors.lastname: Zheng
authors.forename: Zabu
authors.initials: Z
authors.lastname: Kyaw
authors.forename: Yun
authors.initials: Y
authors.lastname: Ji
authors.forename: Namig
authors.initials: N
authors.lastname: Hasanov
authors.forename: Xiao Wei
authors.initials: XW
authors.lastname: Sun
authors.forename: Hilmi Volkan
authors.initials: HV
authors.lastname: Demir
mesh_terms: D004553:Electric Conductivity; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008029:Lighting / Q000295:instrumentation*; D012666:Semiconductors
chemical_list: D007204:Indium; C473348:gallium nitride; D005708:Gallium; C513701:indium nitride