title: Electrochemical doping for lowering contact barriers in organic field effect transistors.
abstract: By electrochemically p-doping pentacene in the vicinity of the source-drain electrodes in organic field effect transistors the injection barrier for holes is decreased. The focus of this work is put on the influence of the p-doping process on the transistor performance. Cyclic voltammetry performed on a pentacene based transistor exhibits a reversible p-doping response. This doped state is evoked at the transistor injection electrodes. An improvement is observed when comparing transistor characteristics before and after the doping process apparent by an improved transistor on-current. This effect is reflected in the analysis of the contact resistances of the devices.
authors.affiliation: Linz Institute for Organic Solar Cells (LIOS), Physical Chemistry, Johannes Kepler University of Linz, A-4040 Linz, Austria.
authors.forename: Stefan
authors.initials: S
authors.lastname: Schaur
authors.forename: Philipp
authors.initials: P
authors.lastname: Stadler
authors.forename: Beatriz
authors.initials: B
authors.lastname: Meana-Esteban
authors.forename: Helmut
authors.initials: H
authors.lastname: Neugebauer
authors.forename: N
authors.initials: N
authors.lastname: Serdar Sariciftci
keywords: Contact barrier; Electrochemical doping; Gold-pentacene interface; Metal-p-i junction; Pentacene