title: High performance mechanisms of near-infrared photodetectors with microcrystalline SiGe films deposited using laser-assisted plasma enhanced chemical vapor deposition system.
abstract: The SiH(4) and GeH(4) reactant gases used for depositing microcrystalline SiGe films could be simultaneously decomposed when acted cooperatively on the plasma and the assistant CO(2) laser in the laser-assisted plasma enhanced chemical vapor deposition system. The carrier mobility of the 80 W laser-assisted SiGe films was significantly increased to 66.8 cm(2)/V-s compared with 2.22 cm(2)/V-s of the non-laser-assisted SiGe films. The performances of the resulting p-Si/i-SiGe/n-Si near-infrared photodetectors were improved due to the high quality and high carrier mobility of the laser-assisted SiGe films. The maximum photoresponsivity and the maximum quantum efficiency of the photodetectors with 80 W laser-assisted SiGe films were respectively improved to 0.47 A/W and 68.5% in comparison with 0.31 A/W and 46.5% of the photodetectors with non-laser-assisted SiGe films.
authors.affiliation: Institute of Microelectronics, Department of Electrical Engineering, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan.
authors.forename: Ching-Ting
authors.initials: CT
authors.lastname: Lee
authors.forename: Min-Yen
authors.initials: MY
authors.lastname: Tsai