title: A pedagogical perspective on ambipolar FETs.
abstract: The operation of an ambipolar field-effect transistor (FET) is described using a simple diagram depicting the gate voltage and channel potential profile relative to the injection threshold voltage of charge carriers. From this diagram, the transition between transistor-operation regimes and the resulting current-voltage relations can be easily understood. Also, a practical guidance for the operation of an ambipolar FET is provided. In particular, conditions to achieve the true ambipolar regime, which is of particular interest for light-emitting transistor operation, and a correct method to extract electron and hole mobilities from a given current-voltage curve are presented.
authors.affiliation: Department of Chemical Engineering, Soongsil University, Seoul, 156-743, South Korea.
authors.forename: Moon Sung
authors.initials: MS
authors.lastname: Kang
authors.forename: C Daniel
authors.initials: CD
authors.lastname: Frisbie