title: Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors.
abstract: Ultra-definition, large-area displays with three-dimensional visual effects represent megatrend in the current/future display industry. On the hardware level, such a "dream" display requires faster pixel switching and higher driving current, which in turn necessitate thin-film transistors (TFTs) with high mobility. Amorphous oxide semiconductors (AOS) such as In-Ga-Zn-O are poised to enable such TFTs, but the trade-off between device performance and stability under illumination critically limits their usability, which is related to the hampered electron-hole recombination caused by the oxygen vacancies. Here we have improved the illumination stability by substituting oxygen with nitrogen in ZnO, which may deactivate oxygen vacancies by raising valence bands above the defect levels. Indeed, the stability under illumination and electrical bias is superior to that of previous AOS-based TFTs. By achieving both mobility and stability, it is highly expected that the present ZnON TFTs will be extensively deployed in next-generation flat-panel displays.
authors.affiliation: Display Device Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics Corporation, Yongin-Si, Gyeonggi-Do, Republic of Korea.
authors.forename: Hyun-Suk
authors.initials: HS
authors.lastname: Kim
authors.forename: Sang Ho
authors.initials: SH
authors.lastname: Jeon
authors.forename: Joon Seok
authors.initials: JS
authors.lastname: Park
authors.forename: Tae Sang
authors.initials: TS
authors.lastname: Kim
authors.forename: Kyoung Seok
authors.initials: KS
authors.lastname: Son
authors.forename: Jong-Baek
authors.initials: JB
authors.lastname: Seon
authors.forename: Seok-Jun
authors.initials: SJ
authors.lastname: Seo
authors.forename: Sun-Jae
authors.initials: SJ
authors.lastname: Kim
authors.forename: Eunha
authors.initials: E
authors.lastname: Lee
authors.forename: Jae Gwan
authors.initials: JG
authors.lastname: Chung
authors.forename: Hyungik
authors.initials: H
authors.lastname: Lee
authors.forename: Seungwu
authors.initials: S
authors.lastname: Han
authors.forename: Myungkwan
authors.initials: M
authors.lastname: Ryu
authors.forename: Sang Yoon
authors.initials: SY
authors.lastname: Lee
authors.forename: Kinam
authors.initials: K
authors.lastname: Kim
mesh_terms: D000838:Anions / Q000737:chemistry*; D018360:Crystallography, X-Ray; D009584:Nitrogen / Q000737:chemistry; D010087:Oxides / Q000737:chemistry*; D010100:Oxygen / Q000737:chemistry; D012666:Semiconductors; D014173:Transistors, Electronic; D015034:Zinc Oxide / Q000737:chemistry
chemical_list: D000838:Anions; D010087:Oxides; D009584:Nitrogen; D010100:Oxygen; D015034:Zinc Oxide