title: High quality factor whispering gallery modes from self-assembled hexagonal GaN rods grown by metal-organic vapor phase epitaxy.
abstract: Self-assembled GaN rods were grown on sapphire by metal-organic vapor phase epitaxy using a simple two-step method that relies first on a nitridation step followed by GaN epitaxy. The mask-free rods formed without any additional catalyst. Most of the vertically aligned rods exhibit a regular hexagonal shape with sharp edges and smooth sidewall facets. Cathodo- and microphotoluminescence investigations were carried out on single GaN rods. Whispering gallery modes with quality factors greater than 4000 were measured demonstrating the high morphological and optical quality of the self-assembled GaN rods.
authors.affiliation: Max Planck Institute for the Science of Light, Günther-Scharowski-Str. 1, 91058 Erlangen, Germany. christian.tessarek@mpl.mpg.de
authors.forename: C
authors.initials: C
authors.lastname: Tessarek
authors.forename: G
authors.initials: G
authors.lastname: Sarau
authors.forename: M
authors.initials: M
authors.lastname: Kiometzis
authors.forename: S
authors.initials: S
authors.lastname: Christiansen
mesh_terms: D003460:Crystallization / Q000379:methods*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D008422:Materials Testing; D008670:Metals / Q000737:chemistry*; D009930:Organic Chemicals / Q000737:chemistry*; D020349:Surface Plasmon Resonance / Q000295:instrumentation*
chemical_list: D008670:Metals; D009930:Organic Chemicals; C473348:gallium nitride; D005708:Gallium