title: Low-temperature metal-oxide thin-film transistors formed by directly photopatternable and combustible solution synthesis.
abstract: We investigated the formation of ultraviolet (UV)-assisted directly patternable solution-processed oxide semiconductor films and successfully fabricated thin-film transistors (TFTs) based on these films. An InGaZnO (IGZO) solution that was modified chemically with benzoylacetone (BzAc), whose chelate rings decomposed via a π-π* transition as result of UV irradiation, was used for the direct patterning. A TFT was fabricated using the directly patterned IGZO film, and it had better electrical characteristics than those of conventional photoresist (PR)-patterned TFTs. In addition, the nitric acid (HNO3) and acetylacetone (AcAc) modified In2O3 (NAc-In2O3) solution exhibited both strong UV absorption and high exothermic reaction. This method not only resulted in the formation of a low-energy path because of the combustion of the chemically modified metal-oxide solution but also allowed for photoreaction-induced direct patterning at low temperatures.
authors.affiliation: School of Electrical and Electronic Engineering, 50 Yonsei-ro, Seodaemun-gu, Yonsei University, Seoul 120-749, Korea.
authors.forename: You Seung
authors.initials: YS
authors.lastname: Rim
authors.forename: Hyun Soo
authors.initials: HS
authors.lastname: Lim
authors.forename: Hyun Jae
authors.initials: HJ
authors.lastname: Kim