title: Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces.
abstract: Recently, monolayers of layered transition metal dichalcogenides (LTMD), such as MX2 (M = Mo, W and X = S, Se), have been reported to exhibit significant spin-valley coupling and optoelectronic performances because of the unique structural symmetry and band structures. Monolayers in this class of materials offered a burgeoning field in fundamental physics, energy harvesting, electronics, and optoelectronics. However, most studies to date are hindered by great challenges on the synthesis and transfer of high-quality LTMD monolayers. Hence, a feasible synthetic process to overcome the challenges is essential. Here, we demonstrate the growth of high-quality MS2 (M = Mo, W) monolayers using ambient-pressure chemical vapor deposition (APCVD) with the seeding of perylene-3,4,9,10-tetracarboxylic acid tetrapotassium salt (PTAS). The growth of a MS2 monolayer is achieved on various surfaces with a significant flexibility to surface corrugation. Electronic transport and optical performances of the as-grown MS2 monolayers are comparable to those of exfoliated MS2 monolayers. We also demonstrate a robust technique in transferring the MS2 monolayer samples to diverse surfaces, which may stimulate the progress on the class of materials and open a new route toward the synthesis of various novel hybrid structures with LTMD monolayer and functional materials.
authors.affiliation: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge Massachusetts 02139, United States.
authors.forename: Yi-Hsien
authors.initials: YH
authors.lastname: Lee
authors.forename: Lili
authors.initials: L
authors.lastname: Yu
authors.forename: Han
authors.initials: H
authors.lastname: Wang
authors.forename: Wenjing
authors.initials: W
authors.lastname: Fang
authors.forename: Xi
authors.initials: X
authors.lastname: Ling
authors.forename: Yumeng
authors.initials: Y
authors.lastname: Shi
authors.forename: Cheng-Te
authors.initials: CT
authors.lastname: Lin
authors.forename: Jing-Kai
authors.initials: JK
authors.lastname: Huang
authors.forename: Mu-Tung
authors.initials: MT
authors.lastname: Chang
authors.forename: Chia-Seng
authors.initials: CS
authors.lastname: Chang
authors.forename: Mildred
authors.initials: M
authors.lastname: Dresselhaus
authors.forename: Tomas
authors.initials: T
authors.lastname: Palacios
authors.forename: Lain-Jong
authors.initials: LJ
authors.lastname: Li
authors.forename: Jing
authors.initials: J
authors.lastname: Kong
mesh_terms: D004220:Disulfides / Q000737:chemistry*; D004581:Electronics; D008670:Metals / Q000737:chemistry*; D036103:Nanotechnology; D010569:Perylene / Q000737:chemistry; D013499:Surface Properties
chemical_list: D004220:Disulfides; D008670:Metals; D010569:Perylene