title: Electroluminescence in single layer MoS2.
abstract: We detect electroluminescence in single layer molybdenum disulfide (MoS2) field-effect transistors built on transparent glass substrates. By comparing the absorption, photoluminescence, and electroluminescence of the same MoS2 layer, we find that they all involve the same excited state at 1.8 eV. The electroluminescence has pronounced threshold behavior and is localized at the contacts. The results show that single layer MoS2, a direct band gap semiconductor, could be promising for novel optoelectronic devices, such as two-dimensional light detectors and emitters.
authors.affiliation: Cambridge Graphene Centre, University of Cambridge, Cambridge, United Kingdom.
authors.forename: R S
authors.initials: RS
authors.lastname: Sundaram
authors.forename: M
authors.initials: M
authors.lastname: Engel
authors.forename: A
authors.initials: A
authors.lastname: Lombardo
authors.forename: R
authors.initials: R
authors.lastname: Krupke
authors.forename: A C
authors.initials: AC
authors.lastname: Ferrari
authors.forename: Ph
authors.initials: P
authors.lastname: Avouris
authors.forename: M
authors.initials: M
authors.lastname: Steiner
mesh_terms: D004220:Disulfides / Q000737:chemistry*; D004560:Electricity; D004867:Equipment Design; D049449:Luminescence; D008982:Molybdenum / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry*; D012666:Semiconductors; D014173:Transistors, Electronic
chemical_list: D004220:Disulfides; D008982:Molybdenum; C082964:molybdenum disulfide