title: All zinc-blende GaAs/(Ga,Mn)As core-shell nanowires with ferromagnetic ordering.
abstract: Combining self-catalyzed vapor-liquid-solid growth of GaAs nanowires and low-temperature molecular-beam epitaxy of (Ga,Mn)As, we successfully synthesized all zinc-blende (ZB) GaAs/(Ga,Mn)As core-shell nanowires on Si(111) substrates. The ZB GaAs nanowire cores are first fabricated at high temperature by utilizing the Ga droplets as the catalyst and controlling the triple phase line nucleation, then the (Ga,Mn)As shells are epitaxially grown on the side facets of the GaAs core at low temperature. The growth window for the pure phase GaAs/(Ga,Mn)As core-shell nanowires is found to be very narrow. Both high-resolution transmission electron microscopy and scanning electron microscopy observations confirm that all-ZB GaAs/(Ga,Mn)As core-shell nanowires with smooth side surface are obtained when the Mn concentration is not more than 2% and the growth temperature is 245 °C or below. Magnetic measurements with different applied field directions provide strong evidence for ferromagnetic ordering in the all-ZB GaAs/(Ga,Mn)As nanowires. The hybrid nanowires offer an attractive platform to explore spin transport and device concepts in fully epitaxial all-semiconductor nanospintronic structures.
authors.affiliation: State Key Laboratory of Superlattices and Microstructrues, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
authors.forename: Xuezhe
authors.initials: X
authors.lastname: Yu
authors.forename: Hailong
authors.initials: H
authors.lastname: Wang
authors.forename: Dong
authors.initials: D
authors.lastname: Pan
authors.forename: Jianhua
authors.initials: J
authors.lastname: Zhao
authors.forename: Jennifer
authors.initials: J
authors.lastname: Misuraca
authors.forename: Stephan
authors.initials: S
authors.lastname: von Molnár
authors.forename: Peng
authors.initials: P
authors.lastname: Xiong
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D003460:Crystallization; D005708:Gallium / Q000737:chemistry*; D059346:Magnets / Q000737:chemistry; D008855:Microscopy, Electron, Scanning; D053770:Nanowires / Q000737:chemistry*; D010316:Particle Size; D012666:Semiconductors; D013499:Surface Properties; D013696:Temperature; D015032:Zinc / Q000737:chemistry*
chemical_list: D001152:Arsenicals; C043055:gallium arsenide; D005708:Gallium; D015032:Zinc