title: High-accuracy analysis of nanoscale semiconductor layers using beam-exit ar-ion polishing and scanning probe microscopy.
abstract: A novel method of sample cross sectioning, beam-exit Ar-ion cross-sectional polishing, has been combined with scanning probe microscopy to study thin AlxGa1-xAs/GaAs layers. Additional contrast enhancement via a citric acid/hydrogen peroxide etch allows us to report the observation of layers as thin as 1 nm. Layer thickness measurements agree with transmission electron microscopy (TEM) data to 0.1 ± 0.2 nm, making this a very promising low-cost method for nanoscale analysis of semiconductor heterostructures.
authors.affiliation: Department of Physics, Lancaster University, Lancaster, LA1 4YB, United Kingdom. a.robson@lancaster.ac.uk
authors.forename: Alexander J
authors.initials: AJ
authors.lastname: Robson
authors.forename: Ilya
authors.initials: I
authors.lastname: Grishin
authors.forename: Robert J
authors.initials: RJ
authors.lastname: Young
authors.forename: Ana M
authors.initials: AM
authors.lastname: Sanchez
authors.forename: Oleg V
authors.initials: OV
authors.lastname: Kolosov
authors.forename: Manus
authors.initials: M
authors.lastname: Hayne