title: Physisorption of functionalized gold nanoparticles on AlGaN/GaN high electron mobility transistors for sensing applications.
abstract: AlGaN/GaN high electron mobility transistors (HEMTs) were used to measure electrical characteristics of physisorbed gold nanoparticles (Au NPs) functionalized with alkanethiols with a terminal methyl, amine, or carboxyl functional group. Additional alkanethiol was physisorbed onto the NP treated devices to distinguish between the effects of the Au NPs and alkanethiols on HEMT operation. Scanning Kelvin probe microscopy and electrical measurements were used to characterize the treatment effects. The HEMTs were operated near threshold voltage due to the greatest sensitivity in this region. The Au NP/HEMT system electrically detected functional group differences on adsorbed NPs which is pertinent to biosensor applications.
authors.affiliation: Weldon School of Biomedical Engineering, Purdue University, West Lafayette, Indiana 47907, USA ; Indiana University School of Medicine, Indianapolis, Indiana 46202, USA.
authors.forename: M S
authors.initials: MS
authors.lastname: Makowski
authors.forename: S
authors.initials: S
authors.lastname: Kim
authors.forename: M
authors.initials: M
authors.lastname: Gaillard
authors.forename: D
authors.initials: D
authors.lastname: Janes
authors.forename: M J
authors.initials: MJ
authors.lastname: Manfra
authors.forename: I
authors.initials: I
authors.lastname: Bryan
authors.forename: Z
authors.initials: Z
authors.lastname: Sitar
authors.forename: C
authors.initials: C
authors.lastname: Arellano
authors.forename: J
authors.initials: J
authors.lastname: Xie
authors.forename: R
authors.initials: R
authors.lastname: Collazo
authors.forename: A
authors.initials: A
authors.lastname: Ivanisevic