title: Printed, sub-2V ZnO electrolyte gated transistors and inverters on plastic.
abstract: Printed, flexible sub-2 V ZnO electrolyte gated transistors (EGTs) are demonstrated. ZnO EGTs with high-capacitance ion-gel gate insulators are printed on a kapton substrate and the devices exhibit high electron mobility (1.61 cm(-2) V(-1) s(-1) ), low operation voltage (<2 V), and good electrical/mechanical stabilities.
authors.affiliation: Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave. SE. Minneapolis, MN 55455, USA.
authors.forename: Kihyon
authors.initials: K
authors.lastname: Hong
authors.forename: Se Hyun
authors.initials: SH
authors.lastname: Kim
authors.forename: Keun Hyung
authors.initials: KH
authors.lastname: Lee
authors.forename: C Daniel
authors.initials: CD
authors.lastname: Frisbie
keywords: electrolyte gated transistors (EGTs); flexible substrates; ion-gel gate insulators; printed ZnO transistors; thin-film transistors