title: Characteristics of a pMOSFET suitable for use in radiotherapy.
abstract: The paper describes dose response and signal fading of Al-gate p-channel (metal oxide semiconductor field effect transistors) MOSFETs in the range of gamma radiation doses used in radiation therapy. MOSFETs with thicknesses of the gate oxide layer of 1 μm and 400 nm were used. The response was characterized by the threshold voltage shift and was studied as a function of the absorbed dose and time after irradiation. The dosimeters with the 1-μm-thick oxide layer can be effectively used for measuring doses in the 0.1-5 Gy range. The dosimeters with 400-nm-thick oxide layer are suitable for measuring doses above 5 Gy. Both types of the dosimeters retain dosimetric information for long periods of time.
authors.affiliation: University of Nis, Faculty of Medicine, bul. Dr. Zorana Djindjica 81, 18000 Nis, Serbia.
authors.forename: Svetlana
authors.initials: S
authors.lastname: Pejovic
authors.forename: Petar
authors.initials: P
authors.lastname: Bosnjakovic
authors.forename: Olivera
authors.initials: O
authors.lastname: Ciraj-Bjelac
authors.forename: Momcilo M
authors.initials: MM
authors.lastname: Pejovic
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D005720:Gamma Rays; D011829:Radiation Dosage; D011874:Radiometry / Q000295:instrumentation*; D011878:Radiotherapy / Q000295:instrumentation*; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity; D014173:Transistors, Electronic