title: Hybrid III-V/silicon single-mode laser with periodic microstructures.
abstract: In this Letter, a III-V/silicon hybrid single-mode laser operating at C band for photonic integration circuit is presented. The InGaAlAs gain structure is bonded onto a patterned silicon-on insulator through wafer to wafer directly. The mode selected mechanism based on a hybrid III-V/silicon straight cavity with periodic microstructures is applied, which only need low cost i-line projection photolithography in the whole technological process. At room temperature, we obtain 0.62 mW output power in continuous-wave. The side mode suppression ratio of larger than 20 dB is obtained from experiments. [corrected].
authors.affiliation: State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.
authors.forename: Yejin
authors.initials: Y
authors.lastname: Zhang
authors.forename: Hongwei
authors.initials: H
authors.lastname: Qu
authors.forename: Hailing
authors.initials: H
authors.lastname: Wang
authors.forename: Siriguleng
authors.initials: S
authors.lastname: Zhang
authors.forename: Shaodong
authors.initials: S
authors.lastname: Ma
authors.forename: Aiyi
authors.initials: A
authors.lastname: Qi
authors.forename: Zhigang
authors.initials: Z
authors.lastname: Feng
authors.forename: Hongling
authors.initials: H
authors.lastname: Peng
authors.forename: Wanhua
authors.initials: W
authors.lastname: Zheng