title: Nonvolatile memory cells based on MoS2/graphene heterostructures.
abstract: Memory cells are an important building block of digital electronics. We combine here the unique electronic properties of semiconducting monolayer MoS2 with the high conductivity of graphene to build a 2D heterostructure capable of information storage. MoS2 acts as a channel in an intimate contact with graphene electrodes in a field-effect transistor geometry. Our prototypical all-2D transistor is further integrated with a multilayer graphene charge trapping layer into a device that can be operated as a nonvolatile memory cell. Because of its band gap and 2D nature, monolayer MoS2 is highly sensitive to the presence of charges in the charge trapping layer, resulting in a factor of 10(4) difference between memory program and erase states. The two-dimensional nature of both the contact and the channel can be harnessed for the fabrication of flexible nanoelectronic devices with large-scale integration.
authors.affiliation: Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.
authors.forename: Simone
authors.initials: S
authors.lastname: Bertolazzi
authors.forename: Daria
authors.initials: D
authors.lastname: Krasnozhon
authors.forename: Andras
authors.initials: A
authors.lastname: Kis
mesh_terms: D016248:Computer Storage Devices; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008982:Molybdenum / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D013440:Sulfides / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D013440:Sulfides; D008982:Molybdenum