title: High efficiency photoelectrochemical water splitting and hydrogen generation using GaN nanowire photoelectrode.
abstract: We have studied the photoelectrochemical properties of both undoped and Si-doped GaN nanowire arrays in 1 mol l(-1) solutions of hydrogen bromide and potassium bromide, which were used separately as electrolytes. It is observed that variations of the photocurrent with bias voltage depend strongly on the n-type doping in GaN nanowires in both electrolytes, which are analyzed in the context of GaN surface band bending and its variation with the incorporation of Si-doping. Maximum incident-photon-to-current-conversion efficiencies of ~15% and 18% are measured for undoped and Si-doped GaN nanowires under ~350 nm light illumination, respectively. Stable hydrogen generation is also observed at a zero bias potential versus the counter-electrode.
authors.affiliation: Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, QC, Canada.
authors.forename: B
authors.initials: B
authors.lastname: AlOtaibi
authors.forename: M
authors.initials: M
authors.lastname: Harati
authors.forename: S
authors.initials: S
authors.lastname: Fan
authors.forename: S
authors.initials: S
authors.lastname: Zhao
authors.forename: H P T
authors.initials: HP
authors.lastname: Nguyen
authors.forename: M G
authors.initials: MG
authors.lastname: Kibria
authors.forename: Z
authors.initials: Z
authors.lastname: Mi