title: Integrated materials design of organic semiconductors for field-effect transistors.
abstract: The past couple of years have witnessed a remarkable burst in the development of organic field-effect transistors (OFETs), with a number of organic semiconductors surpassing the benchmark mobility of 10 cm(2)/(V s). In this perspective, we highlight some of the major milestones along the way to provide a historical view of OFET development, introduce the integrated molecular design concepts and process engineering approaches that lead to the current success, and identify the challenges ahead to make OFETs applicable in real applications.
authors.affiliation: Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States.
authors.forename: Jianguo
authors.initials: J
authors.lastname: Mei
authors.forename: Ying
authors.initials: Y
authors.lastname: Diao
authors.forename: Anthony L
authors.initials: AL
authors.lastname: Appleton
authors.forename: Lei
authors.initials: L
authors.lastname: Fang
authors.forename: Zhenan
authors.initials: Z
authors.lastname: Bao
mesh_terms: D015394:Molecular Structure; D009930:Organic Chemicals / Q000138:chemical synthesis / Q000737:chemistry*; D012666:Semiconductors; D014173:Transistors, Electronic
chemical_list: D009930:Organic Chemicals