title: Ferroelectric polymer-gated graphene memory with high speed conductivity modulation.
abstract: The feasibility of a high speed ferroelectric graphene memory device using a ferroelectric polymer (PVDF-TrFE)/graphene stack has been demonstrated. The conductivity of this metal-ferroelectric-graphene (MFG) device could be modulated up to 775% with a very fast programming speed down to 10 ns. Also, programmed states were maintained up to 1000 s with endurance over 1000 cycles. In addition to demonstrating a single memory device, the array-level integration and cell write/read functionality of a 4 × 4 MFG array adopting a graphene bit line has also been confirmed to show the feasibility of MFG memory.
authors.affiliation: School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, Korea.
authors.forename: Hyeon Jun
authors.initials: HJ
authors.lastname: Hwang
authors.forename: Jin Ho
authors.initials: JH
authors.lastname: Yang
authors.forename: Young Gon
authors.initials: YG
authors.lastname: Lee
authors.forename: Chunhum
authors.initials: C
authors.lastname: Cho
authors.forename: Chang Goo
authors.initials: CG
authors.lastname: Kang
authors.forename: Soo Cheol
authors.initials: SC
authors.lastname: Kang
authors.forename: Woojin
authors.initials: W
authors.lastname: Park
authors.forename: Byoung Hun
authors.initials: BH
authors.lastname: Lee