title: Experimental demonstration of self-aligned InP/InGaAsP polarization converter for polarization multiplexed photonic integrated circuits.
abstract: Highly efficient, low-loss, and compact InP/InGaAsP polarization converter based on a half-ridge waveguide structure is fabricated and demonstrated experimentally. The device is fabricated by a simple self-aligned process and integrated with a ridge InP waveguide. Using a 150-μm-long device, we obtain the mode conversion of more than 96% and the on-chip loss of less than 1.0 dB over the broad wavelength range from 1510 to 1575 nm. The experimental results are explained quantitatively using the full-vector eigenmode calculation, which also reveals large fabrication tolerance of the demonstrated device.
authors.affiliation: Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1, Komaba, Tokyo 153-8904, Japan. zaitsu@hotaka.t.u-tokyo.ac.jp
authors.forename: Masaru
authors.initials: M
authors.lastname: Zaitsu
authors.forename: Takuo
authors.initials: T
authors.lastname: Tanemura
authors.forename: Akio
authors.initials: A
authors.lastname: Higo
authors.forename: Yoshiaki
authors.initials: Y
authors.lastname: Nakano
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D010720:Phosphines / Q000737:chemistry*; D017785:Photons; D012666:Semiconductors; D020349:Surface Plasmon Resonance / Q000295:instrumentation*; D018511:Systems Integration
chemical_list: D010720:Phosphines; D007204:Indium; C485338:gallium phosphide; D005708:Gallium; C090882:indium phosphide