title: Non-ohmic behavior of carrier transport in highly disordered graphene.
abstract: We report measurements of disordered graphene probed by both a high electric field and a high magnetic field. By applying a high source-drain voltage, Vsd, we are able to study the current-voltage relation I-Vsd of our device. With increasing Vsd, a crossover from the linear I-Vsd regime to the non-linear one, and eventually to activationless-hopping transport occurs. In the activationless-hopping regime, the importance of Coulomb interactions between charged carriers is demonstrated. Moreover, we show that delocalization of carriers which are strongly localized at low T and at small Vsd occurs in the presence of high electric field and perpendicular magnetic field.
authors.affiliation: Graduate Institute of Applied Physics, National Taiwan University, Taipei 106, Taiwan.
authors.forename: Shun-Tsung
authors.initials: ST
authors.lastname: Lo
authors.forename: Chiashain
authors.initials: C
authors.lastname: Chuang
authors.forename: R K
authors.initials: RK
authors.lastname: Puddy
authors.forename: T-M
authors.initials: TM
authors.lastname: Chen
authors.forename: C G
authors.initials: CG
authors.lastname: Smith
authors.forename: C-T
authors.initials: CT
authors.lastname: Liang