title: Scalable patterning of one-dimensional dangling bond rows on hydrogenated Si(001).
abstract: Silicon dangling bonds exposed on the monohydride silicon (001) (Si(001):H) surface are highly reactive, thus enabling site-selective absorption of atoms and single molecules into custom patterns designed through the controlled removal of hydrogen atoms. Current implementations of high-resolution hydrogen lithography on the Si(001):H surface rely on sequential removal of hydrogen atoms using the tip of a scanning probe microscope. Here, we present a scalable thermal process that yields very long rows of single dimer wide silicon dangling bonds suitable for self-assembly of atoms and molecules into one-dimensional structures of unprecedented length on Si(001):H. The row consists of the standard buckled Si dimer and an unexpected flat dimer configuration.
authors.affiliation: Department of Condensed Matter Physics, University of Geneva, NCCR MaNEP, 24 Quai Ernest-Ansermet, 1211 Geneva 4, Switzerland.
authors.forename: François
authors.initials: F
authors.lastname: Bianco
authors.forename: David R
authors.initials: DR
authors.lastname: Bowler
authors.forename: James H G
authors.initials: JH
authors.lastname: Owen
authors.forename: Sigrun A
authors.initials: SA
authors.lastname: Köster
authors.forename: Maria
authors.initials: M
authors.lastname: Longobardi
authors.forename: Christoph
authors.initials: C
authors.lastname: Renner