title: Large current MOSFET on photonic silicon-on-insulator wafers and its monolithic integration with a thermo-optic 2 × 2 Mach-Zehnder switch.
abstract: n-channel body-tied partially depleted metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated for large current applications on a silicon-on-insulator wafer with photonics-oriented specifications. The MOSFET can drive an electrical current as large as 20 mA. We monolithically integrated this MOSFET with a 2 × 2 Mach-Zehnder interferometer optical switch having thermo-optic phase shifters. The static and dynamic performances of the integrated device are experimentally evaluated.
authors.affiliation: Network Photonics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Umezono 1-1-1, Tsukuba, Ibaraki 305-8568, Japan. gw-cong@aist.go.jp
authors.forename: G W
authors.initials: GW
authors.lastname: Cong
authors.forename: T
authors.initials: T
authors.lastname: Matsukawa
authors.forename: T
authors.initials: T
authors.lastname: Chiba
authors.forename: H
authors.initials: H
authors.lastname: Tadokoro
authors.forename: M
authors.initials: M
authors.lastname: Yanagihara
authors.forename: M
authors.initials: M
authors.lastname: Ohno
authors.forename: H
authors.initials: H
authors.lastname: Kawashima
authors.forename: H
authors.initials: H
authors.lastname: Kuwatsuka
authors.forename: Y
authors.initials: Y
authors.lastname: Igarashi
authors.forename: M
authors.initials: M
authors.lastname: Masahara
authors.forename: H
authors.initials: H
authors.lastname: Ishikawa
mesh_terms: D004553:Electric Conductivity; D004867:Equipment Design; D019544:Equipment Failure Analysis; D006358:Hot Temperature; D007368:Interferometry / Q000295:instrumentation*; D017785:Photons; D012031:Refractometry / Q000295:instrumentation*; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry*; D018511:Systems Integration; D014173:Transistors, Electronic
chemical_list: D012825:Silicon