title: Photoelectrical properties and the electronic structure of Tl(1-x)In(1-x)Sn(x)Se2 (x = 0, 0.1, 0.2, 0.25) single crystalline alloys.
abstract: Photoelectrical properties of Tl1-xIn1-xSnxSe2 single crystalline alloys (x = 0, 0.1, 0.2, 0.25) grown using the Bridgman-Stockbarger method were studied. The temperature dependence of electrical and photoconductivity for the Tl1-xIn1-xSnxSe2 single crystals was explored. It has been established that photosensitivity of the Tl1-xIn1-xSnxSe2 single crystals increases with x. The spectral distribution of photocurrent in the wavelength spectral range 400-1000 nm has been investigated at various temperatures. Photoconductivity increases in all the studied crystals with temperature. Therefore, thermal activation of photoconductivity is caused by re-charging of the photoactive centers as the samples are heated. Based on our investigations, a model of center re-charging is proposed that explains the observed phenomena. X-ray photoelectron valence-band spectra for pristine and Ar(+)-ion irradiated surfaces of the Tl1-xIn1-xSnxSe2 single crystals have been measured. These results reveal that the Tl1-xIn1-xSnxSe2 single-crystal surface is sensitive to the Ar(+) ion irradiation that induced structural modification in the top surface layers. Comparison on a common energy scale of the X-ray emission Se Kβ2 bands representing energy distribution of the Se 4p-like states and the X-ray photoelectron valence-band spectra was done.
authors.affiliation: Department of Solid State Physics, Volyn National University, 13 Voli Ave., Lutsk 43025, Ukraine.
authors.forename: G E
authors.initials: GE
authors.lastname: Davydyuk
authors.forename: O Y
authors.initials: OY
authors.lastname: Khyzhun
authors.forename: A H
authors.initials: AH
authors.lastname: Reshak
authors.forename: H
authors.initials: H
authors.lastname: Kamarudin
authors.forename: G L
authors.initials: GL
authors.lastname: Myronchuk
authors.forename: S P
authors.initials: SP
authors.lastname: Danylchuk
authors.forename: A O
authors.initials: AO
authors.lastname: Fedorchuk
authors.forename: L V
authors.initials: LV
authors.lastname: Piskach
authors.forename: M Yu
authors.initials: MY
authors.lastname: Mozolyuk
authors.forename: O V
authors.initials: OV
authors.lastname: Parasyuk
mesh_terms: D000497:Alloys / Q000737:chemistry*; D003460:Crystallization; D004583:Electrons; D007204:Indium / Q000737:chemistry*; D056951:Photoelectron Spectroscopy; D012643:Selenium / Q000737:chemistry*; D013696:Temperature; D013793:Thallium / Q000737:chemistry*; D014001:Tin / Q000737:chemistry*
chemical_list: D000497:Alloys; D007204:Indium; D014001:Tin; D013793:Thallium; D012643:Selenium