title: Atomic resolution imaging of grain boundary defects in monolayer chemical vapor deposition-grown hexagonal boron nitride.
abstract: Grain boundaries are observed and characterized in chemical vapor deposition-grown sheets of hexagonal boron nitride (h-BN) via ultra-high-resolution transmission electron microscopy at elevated temperature. Five- and seven-fold defects are readily observed along the grain boundary. Dynamics of strained regions and grain boundary defects are resolved. The defect structures and the resulting out-of-plane warping are consistent with recent theoretical model predictions for grain boundaries in h-BN.
authors.affiliation: Department of Chemistry, University of California, Berkeley, California 94720, United States.
authors.forename: Ashley L
authors.initials: AL
authors.lastname: Gibb
authors.forename: Nasim
authors.initials: N
authors.lastname: Alem
authors.forename: Jian-Hao
authors.initials: JH
authors.lastname: Chen
authors.forename: Kristopher J
authors.initials: KJ
authors.lastname: Erickson
authors.forename: Jim
authors.initials: J
authors.lastname: Ciston
authors.forename: Abhay
authors.initials: A
authors.lastname: Gautam
authors.forename: Martin
authors.initials: M
authors.lastname: Linck
authors.forename: Alex
authors.initials: A
authors.lastname: Zettl
mesh_terms: D001896:Boron Compounds / Q000737:chemistry*; D010316:Particle Size; D013499:Surface Properties
chemical_list: D001896:Boron Compounds; C017282:boron nitride