title: Strain induced bandgap and refractive index variation of silicon.
abstract: We present a study of the influence of high strain on the bandgap and the refractive index of silicon. The results of photoluminescence show that with the strain applied, the silicon bandgap can be adjusted to 0.84 eV and the refractive index of silicon increases significantly. 1.4% change of refractive index of silicon was observed. The strain-induced bandgap shrinkage and absorption coefficient change of silicon are considered as the main cause of the significant refractive index change. The present work indicates that the application of strain is promising to control the refractive index of silicon in devices so that applications such as compensation of thermal effect in optical devices can be achieved.
authors.affiliation: Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo,113-8656, Japan. cai@microphotonics.t.u-tokyo.ac.jp
authors.forename: Jingnan
authors.initials: J
authors.lastname: Cai
authors.forename: Yasuhiko
authors.initials: Y
authors.lastname: Ishikawa
authors.forename: Kazumi
authors.initials: K
authors.lastname: Wada
mesh_terms: D055119:Elastic Modulus; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008027:Light; D008422:Materials Testing; D012031:Refractometry / Q000379:methods*; D012542:Scattering, Radiation; D012825:Silicon / Q000737:chemistry*; D013314:Stress, Mechanical; D013718:Tensile Strength
chemical_list: D012825:Silicon