title: Gain-switched pulses from InGaAs ridge-quantum-well lasers limited by intrinsic dynamical gain suppression.
abstract: Gain-switched pulses of InGaAs double-quantum-well lasers fabricated from identical epitaxial laser wafers were measured under both current injection and optical pumping conditions. The shortest output pulse widths were nearly identical (about 40 ps) both for current injection and optical pumping; this result attributed the dominant pulse-width limitation factor to the intrinsic gain properties of the lasers. We quantitatively compared the experimental results with theoretical calculations based on rate equations incorporating gain nonlinearities. Close consistency between the experimental data and the calculations was obtained only when we assumed a dynamically suppressed gain value deviated from the steady-state gain value supported by standard microscopic theories.
authors.affiliation: Institute for Solid State Physics (ISSP), University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan. shaoqiangchen@gmail.com
authors.forename: Shaoqiang
authors.initials: S
authors.lastname: Chen
authors.forename: Masahiro
authors.initials: M
authors.lastname: Yoshita
authors.forename: Takashi
authors.initials: T
authors.lastname: Ito
authors.forename: Toshimitsu
authors.initials: T
authors.lastname: Mochizuki
authors.forename: Hidefumi
authors.initials: H
authors.lastname: Akiyama
authors.forename: Hiroyuki
authors.initials: H
authors.lastname: Yokoyama
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D007834:Lasers; D011789:Quantum Theory
chemical_list: D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide