title: Enhanced performance of InGaN/GaN based solar cells with an In(0.05)Ga(0.95)N ultra-thin inserting layer between GaN barrier and In(0.2)Ga(0.8)N well.
abstract: The effect of ultra-thin inserting layer (UIL) on the photovoltaic performances of InGaN/GaN solar cells is investigated. With UIL implemented, the open-circuit voltage was increased from 1.4 V to 1.7 V, short-circuit current density was increased by 65% and external quantum efficiency was increased by 59%, compared to its counterparts at room temperature under 1-sun AM1.5G illumination. The improvements in electrical and photovoltaic properties are mainly attributed to the UIL which can boost the crystal quality and alleviate strain. Moreover, it can act as a transition layer for higher indium incorporation and an effective light sub-absorption layer in multiple quantum wells.
authors.affiliation: Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China.
authors.forename: Zhiwei
authors.initials: Z
authors.lastname: Ren
authors.forename: Liu
authors.initials: L
authors.lastname: Chao
authors.forename: Xin
authors.initials: X
authors.lastname: Chen
authors.forename: Bijun
authors.initials: B
authors.lastname: Zhao
authors.forename: Xinfu
authors.initials: X
authors.lastname: Wang
authors.forename: Jinhui
authors.initials: J
authors.lastname: Tong
authors.forename: Jun
authors.initials: J
authors.lastname: Zhang
authors.forename: Xiangjing
authors.initials: X
authors.lastname: Zhuo
authors.forename: Danwei
authors.initials: D
authors.lastname: Li
authors.forename: Hanxiang
authors.initials: H
authors.lastname: Yi
authors.forename: Shuti
authors.initials: S
authors.lastname: Li
mesh_terms: D011211:Electric Power Supplies; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D007909:Lenses; D008904:Miniaturization; D012993:Solar Energy
chemical_list: D007204:Indium; C473348:gallium nitride; D005708:Gallium; C513701:indium nitride