title: The misfit dislocation density profile in graded SiGe/Si(001) layers prepared at different temperatures.
abstract: We present a generalization of the Dodson-Tsao kinematic model of misfit dislocation for graded SixGe1-x/Si(001) layers. The layers were prepared under different growing conditions (temperature). The misfit dislocation distribution has been determined by means of high-resolution x-ray scattering. Analysis of the reciprocal space maps was compared with the kinematic Dodson-Tsao model and the equilibrium Tersoff model.
authors.affiliation: Faculty of Mathematics and Physics, Department of Condensed Matter Physics, Charles University in Prague, Ke Karlovu 5, 121 16 Prague, Czech Republic. endres.jan@gmail.com
authors.forename: J
authors.initials: J
authors.lastname: Endres
authors.forename: S
authors.initials: S
authors.lastname: Daniš
authors.forename: G
authors.initials: G
authors.lastname: Bauer