title: Molecular solution approach to synthesize electronic quality Cu2ZnSnS4 thin films.
abstract: Successful implementation of molecular solution processing from a homogeneous and stable precursor would provide an alternative, robust approach to process multinary compounds compared with physical vapor deposition. Targeting deposition of chemically clear, high quality crystalline films requires specific molecular structure design and solvent selection. Hydrazine (N2H4) serves as a unique and powerful medium, particularly to incorporate selected metallic elements and chalcogens into a stable solution as metal chalcogenide complexes (MCC). However, not all the elements and compounds can be easily dissolved. In this manuscript, we demonstrate a paradigm to incorporate previously insoluble transitional-metal elements into molecular solution as metal-atom hydrazine/hydrazine derivative complexes (MHHD), as exemplified by dissolving of the zinc constituent as Zn(NH2NHCOO)2(N2H4)2. Investigation into the evolution of molecular structure reveals the hidden roadmap to significantly enrich the variety of building blocks for soluble molecule design. The new category of molecular structures not only set up a prototype to incorporate other elements of interest but also points the direction for other compatible solvent selection. As demonstrated from the molecular precursor combining Sn-/Cu-MCC and Zn-MHHD, an ultrathin film of copper zinc tin sulfide (CZTS) was deposited. Characterization of a transistor based on the CZTS channel layer shows electronic properties comparable to CuInSe2, confirming the robustness of this molecular solution processing and the prospect of earth abundant CZTS for next generation photovoltaic materials. This paradigm potentially outlines a universal pathway, from individual molecular design using selected chelated ligands and combination of building blocks in a simple and stable solution to fundamentally change the way multinary compounds are processed.
authors.affiliation: Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, United States.
authors.forename: Wenbing
authors.initials: W
authors.lastname: Yang
authors.forename: Hsin-Sheng
authors.initials: HS
authors.lastname: Duan
authors.forename: Kitty C
authors.initials: KC
authors.lastname: Cha
authors.forename: Chia-Jung
authors.initials: CJ
authors.lastname: Hsu
authors.forename: Wan-Ching
authors.initials: WC
authors.lastname: Hsu
authors.forename: Huanping
authors.initials: H
authors.lastname: Zhou
authors.forename: Brion
authors.initials: B
authors.lastname: Bob
authors.forename: Yang
authors.initials: Y
authors.lastname: Yang