title: Photoinduced sign change of the magnetoresistance in field-effect transistors based on a bipolar molecular glass.
abstract: The application of a novel bipolar molecular glass in field-effect transistors leads to devices with photoinduced magnetoresistance (MR) sign change. In darkness a low external magnetic field increases the resistance (positive MR up to +0.1%), while a magnetic-field induced resistance decrease (negative MR up to -6.5%) can be achieved under illumination.
authors.affiliation: Macromolecular Chemistry and Molecular Materials, Institute of Chemistry, Department of Mathematics and Science and Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel, D 34132 Kassel, Germany.
authors.forename: Evgeny
authors.initials: E
authors.lastname: Tatarov
authors.forename: Thomas
authors.initials: T
authors.lastname: Reichert
authors.forename: Tobat P I
authors.initials: TP
authors.lastname: Saragi
authors.forename: Ayna
authors.initials: A
authors.lastname: Scheffler
authors.forename: Roman
authors.initials: R
authors.lastname: Ueberschaer
authors.forename: Clemens
authors.initials: C
authors.lastname: Bruhn
authors.forename: Thomas
authors.initials: T
authors.lastname: Fuhrmann-Lieker
authors.forename: Josef
authors.initials: J
authors.lastname: Salbeck
mesh_terms: D005898:Glass / Q000737:chemistry*; D060526:Magnetic Fields; D015394:Molecular Structure; D055668:Photochemical Processes; D014173:Transistors, Electronic