title: Diode-pumped actively Q-switched Tm, Ho:GdVO4/BaWO4 intracavity Raman laser at 2533 nm.
abstract: A compact diode-end-pumped actively Q-switched intracavity Raman laser with Tm,Ho:GdVO(4) laser gain medium and BaWO(4) Raman gain crystal is demonstrated for the first time. The Raman threshold is as low as 2.0 W of diode power at 802 nm. The highest average output power of 186 mW at the first Stokes wavelength of 2533 nm is obtained at a pulse repetition rate of 1 kHz, and a pump power of 2.8 W, corresponding to a diode-to-Stokes optical conversion efficiency of 6.6%. The pulsewidth and pulse energy are 7.8 ns and 0.19 mJ, respectively.
authors.affiliation: Key Laboratory of In-Fiber Integrated Optics (Ministry of Education) and College of Science, Harbin Engineering University, Harbin 150001, China.
authors.forename: Jiaqun
authors.initials: J
authors.lastname: Zhao
authors.forename: Xinlu
authors.initials: X
authors.lastname: Zhang
authors.forename: Xu
authors.initials: X
authors.lastname: Guo
authors.forename: Xiujuan
authors.initials: X
authors.lastname: Bao
authors.forename: Li
authors.initials: L
authors.lastname: Li
authors.forename: Jinhui
authors.initials: J
authors.lastname: Cui