title: Facile encapsulation of oxide based thin film transistors by atomic layer deposition based on ozone.
abstract: A simplified encapsulation strategy for metal-oxide based TFTs, using ozone instead of water as an oxygen source in a low-temperature ALD process is demonstrated. Thereby, the threshold voltage remains unaltered and the hysteresis is permanently reduced. Costly energy- and time-consuming post-treatment processes can be avoided. This concept is widely applicable to various encapsulation materials (e.g., Al2 O3 , TiO2 , ZrO2 ) and metal-oxide channel semiconductors (e.g., zinc-tin-oxide (ZTO), indium-gallium-zinc-oxide (IGZO)).
authors.affiliation: University of Wuppertal, Institute of Electronic Devices, Rainer-Gruenter-Strasse 21, Wuppertal, Germany.
authors.forename: Morteza
authors.initials: M
authors.lastname: Fakhri
authors.forename: Nikolai
authors.initials: N
authors.lastname: Babin
authors.forename: Andreas
authors.initials: A
authors.lastname: Behrendt
authors.forename: Timo
authors.initials: T
authors.lastname: Jakob
authors.forename: Patrick
authors.initials: P
authors.lastname: Görrn
authors.forename: Thomas
authors.initials: T
authors.lastname: Riedl
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D005740:Gases / Q000737:chemistry; D008422:Materials Testing; D008567:Membranes, Artificial; D008670:Metals / Q000737:chemistry*; D010087:Oxides / Q000737:chemistry; D014173:Transistors, Electronic
chemical_list: D005740:Gases; D008567:Membranes, Artificial; D008670:Metals; D010087:Oxides