title: Few-Layer MoS2 with high broadband Photogain and fast optical switching for use in harsh environments.
abstract: Few-layered MoS2 as Schottky metal-semiconductor-metal photodetectors (MSM PDs) for use in harsh environments makes its debut as two-dimensional (2D) optoelectronics with high broadband gain (up to 13.3), high detectivity (up to ~10(10) cm Hz(1/2)/W), fast photoresponse (rise time of ~70 μs and fall time of ~110 μs), and high thermal stability (at a working temperature of up to 200 °C). Ultrahigh responsivity (0.57 A/W) of few-layer MoS2 at 532 nm is due to the high optical absorption (~10% despite being less than 2 nm in thickness) and a high photogain, which sets up a new record that was not achievable in 2D nanomaterials previously. This study opens avenues to develop 2D nanomaterial-based optoelectronics for harsh environments in imaging techniques and light-wave communications as well as in future memory storage and optoelectronic circuits.
authors.affiliation: Graduate Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan.
authors.forename: Dung-Sheng
authors.initials: DS
authors.lastname: Tsai
authors.forename: Keng-Ku
authors.initials: KK
authors.lastname: Liu
authors.forename: Der-Hsien
authors.initials: DH
authors.lastname: Lien
authors.forename: Meng-Lin
authors.initials: ML
authors.lastname: Tsai
authors.forename: Chen-Fang
authors.initials: CF
authors.lastname: Kang
authors.forename: Chin-An
authors.initials: CA
authors.lastname: Lin
authors.forename: Lain-Jong
authors.initials: LJ
authors.lastname: Li
authors.forename: Jr-Hau
authors.initials: JH
authors.lastname: He