title: Light-emitting field-effect transistors having combined organic semiconductor and metal oxide layers.
abstract: A new organic light-emitting field-effect transistor characterized by a metal oxide layer inserted between the organic layer and the gate insulator is proposed. The metal oxide is indirectly connected with source and drain electrodes through the organic layer. Upon increasing the potential difference between the source and drain electrodes, the emission becomes exceedingly strong and the emission region encompasses the whole channel zone.
authors.affiliation: Department of Macromolecular Science and Engineering, Graduate School of Science and Technology, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto, Japan.
authors.forename: Keisei
authors.initials: K
authors.lastname: Yamada
authors.forename: Takeshi
authors.initials: T
authors.lastname: Yamao
authors.forename: Shu
authors.initials: S
authors.lastname: Hotta
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D008029:Lighting / Q000295:instrumentation*; D008422:Materials Testing; D008670:Metals / Q000737:chemistry*; D009930:Organic Chemicals / Q000737:chemistry*; D010087:Oxides / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D008670:Metals; D009930:Organic Chemicals; D010087:Oxides