title: Atomic structure of interface states in silicon heterojunction solar cells.
abstract: Combining orientation dependent electrically detected magnetic resonance and g tensor calculations based on density functional theory we assign microscopic structures to paramagnetic states involved in spin-dependent recombination at the interface of hydrogenated amorphous silicon crystalline silicon (a-Si:H/c-Si) heterojunction solar cells. We find that (i) the interface exhibits microscopic roughness, (ii) the electronic structure of the interface defects is mainly determined by c-Si, (iii) we identify the microscopic origin of the conduction band tail state in the a-Si:H layer, and (iv) present a detailed recombination mechanism.
authors.affiliation: Institut für Silizium-Photovoltaik, Helmholtz-Zentrum Berlin für Materialien und Energie, Kekuléstraße 5, D-12489 Berlin, Germany.
authors.forename: B M
authors.initials: BM
authors.lastname: George
authors.forename: J
authors.initials: J
authors.lastname: Behrends
authors.forename: A
authors.initials: A
authors.lastname: Schnegg
authors.forename: T F
authors.initials: TF
authors.lastname: Schulze
authors.forename: M
authors.initials: M
authors.lastname: Fehr
authors.forename: L
authors.initials: L
authors.lastname: Korte
authors.forename: B
authors.initials: B
authors.lastname: Rech
authors.forename: K
authors.initials: K
authors.lastname: Lips
authors.forename: M
authors.initials: M
authors.lastname: Rohrmüller
authors.forename: E
authors.initials: E
authors.lastname: Rauls
authors.forename: W G
authors.initials: WG
authors.lastname: Schmidt
authors.forename: U
authors.initials: U
authors.lastname: Gerstmann