title: Improved performance of GaN-based vertical light emitting diodes with conducting and transparent single-walled carbon nanotube networks.
abstract: In this study, reduced forward voltage and improved light output power of GaN-based vertical light-emitting diodes (VLEDs) incorporating single-walled carbon nanotube (SWNT)-networks is reported. The SWNT-networks were directly formed on a roughened (textured) n-GaN surface via a solution-processed dip-coating method. The surface-roughened VLEDs with the proposed SWNT-networks had a forward voltage of 3.84 V at 350 mA, lower than that of the surface-roughened VLEDs, and exhibited an increase in light output power by 12.9% at 350 mA compared to the surface-roughened VLEDs. These improved electrical and optical properties could be attributed to the SWNT-networks put on the roughened n-GaN surface, which increase the lateral current transport and create scattering of light through the formation of additional roughness.
authors.affiliation: School of Electrical Engineering, Korea University, Seoul 136-701, South Korea.
authors.forename: Su Jin
authors.initials: SJ
authors.lastname: Kim
authors.forename: Kyeong Heon
authors.initials: KH
authors.lastname: Kim
authors.forename: Tae Geun
authors.initials: TG
authors.lastname: Kim
mesh_terms: D004553:Electric Conductivity; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry* / Q000528:radiation effects; D008029:Lighting / Q000295:instrumentation*; D036103:Nanotechnology / Q000295:instrumentation*; D037742:Nanotubes, Carbon / Q000737:chemistry* / Q000528:radiation effects*; D012666:Semiconductors
chemical_list: D037742:Nanotubes, Carbon; C473348:gallium nitride; D005708:Gallium