title: Metal silicide/poly-Si Schottky diodes for uncooled microbolometers.
abstract: : Nickel silicide Schottky diodes formed on polycrystalline Si 〈P〉 films are proposed as temperature sensors of monolithic uncooled microbolometer infrared focal plane arrays. The structure and composition of nickel silicide/polycrystalline silicon films synthesized in a low-temperature process are examined by means of transmission electron microscopy. The Ni silicide is identified as a multi-phase compound composed of 20% to 40% of Ni3Si, 30% to 60% of Ni2Si, and 10% to 30% of NiSi with probable minor content of NiSi2 at the silicide/poly-Si interface. Rectification ratios of the Schottky diodes vary from about 100 to about 20 for the temperature increasing from 22â"ƒ to 70â"ƒ; they exceed 1,000 at 80 K. A barrier of around 0.95 eV is found to control the photovoltage spectra at room temperature. A set of barriers is observed in photo-electromotive force spectra at 80 K and attributed to the Ni silicide/poly-Si interface. Absolute values of temperature coefficients of voltage and current are found to vary from 0.3%â"ƒ to 0.6%/â"ƒ for forward bias and around 2.5%/â"ƒ for reverse bias of the diodes.
authors.affiliation: A M Prokhorov General Physics Institute of the Russian Academy of Sciences, A M Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991, Russia. chizh@kapella.gpi.ru.
authors.forename: Kirill V
authors.initials: KV
authors.lastname: Chizh
authors.forename: Valery A
authors.initials: VA
authors.lastname: Chapnin
authors.forename: Victor P
authors.initials: VP
authors.lastname: Kalinushkin
authors.forename: Vladimir Y
authors.initials: VY
authors.lastname: Resnik
authors.forename: Mikhail S
authors.initials: MS
authors.lastname: Storozhevykh
authors.forename: Vladimir A
authors.initials: VA
authors.lastname: Yuryev