title: Noninvasive spatial metrology of single-atom devices.
abstract: The exact location of a single dopant atom in a nanostructure can influence or fully determine the functionality of highly scaled transistors or spin-based devices. We demonstrate here a noninvasive spatial metrology technique, based on the microscopic modeling of three electrical measurements on a single-atom (phosphorus in silicon) spin qubit device: hyperfine coupling, ground state energy, and capacitive coupling to nearby gates. This technique allows us to locate the qubit atom with a precision of ±2.5 nm in two directions and ±15 nm in the third direction, which represents a 1500-fold improvement with respect to the prefabrication statistics obtainable from the ion implantation parameters.
authors.affiliation: Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney NSW 2052, Australia. fahd.mohiyaddin@student.unsw.edu.au
authors.forename: Fahd A
authors.initials: FA
authors.lastname: Mohiyaddin
authors.forename: Rajib
authors.initials: R
authors.lastname: Rahman
authors.forename: Rachpon
authors.initials: R
authors.lastname: Kalra
authors.forename: Gerhard
authors.initials: G
authors.lastname: Klimeck
authors.forename: Lloyd C L
authors.initials: LC
authors.lastname: Hollenberg
authors.forename: Jarryd J
authors.initials: JJ
authors.lastname: Pla
authors.forename: Andrew S
authors.initials: AS
authors.lastname: Dzurak
authors.forename: Andrea
authors.initials: A
authors.lastname: Morello
mesh_terms: D049329:Nanostructures / Q000737:chemistry*; D010758:Phosphorus / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry
chemical_list: D010758:Phosphorus; D012825:Silicon