title: Heteroepitaxial growth of GaP/ZnS nanocable with superior optoelectronic response.
abstract: We demonstrate the controlled growth of coaxial nanocables composed of GaP/ZnS core-shell structures by a facile chemical vapor deposition method. Structural analysis confirms that the cubic GaP (111) plane and wurtzite ZnS (0001) plane present close similarities in terms of hexagonal-arranged atomic configuration with small in-plane lattice mismatch, and the ZnS shell is epitaxially grown on the (100) plane of the cubic GaP core. Compared with the unitary ZnS nanobelts, the GaP/ZnS coaxial nanocables exhibit improved optoelectronic properties such as high photocurrent and excellent photocurrent stability. This approach opens up new strategy to boost the performance of ZnS-based photodetectors.
authors.affiliation: Department of Materials Science, Fudan University, Shanghai 200433, PR China.
authors.forename: Linfeng
authors.initials: L
authors.lastname: Hu
authors.forename: Megan M
authors.initials: MM
authors.lastname: Brewster
authors.forename: Xiaojie
authors.initials: X
authors.lastname: Xu
authors.forename: Chengchun
authors.initials: C
authors.lastname: Tang
authors.forename: Silvija
authors.initials: S
authors.lastname: Gradečak
authors.forename: Xiaosheng
authors.initials: X
authors.lastname: Fang