title: Device design and simulation for GaN based dual wavelength LEDs.
abstract: A comprehensive optical model for dual wavelength LEDs is developed using optical ray tracing programs. Optical dispersion of GaN, InGaN, and AlGaN is also included in this numerical model. The light extraction efficiency of LEDs can be calculated based on LED structure and material properties. Moreover, a LED device structure can be optimized to improve the light extraction efficiency.
authors.affiliation: School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia, USA. mdxwang@gmail.com
authors.forename: Dong-Xue
authors.initials: DX
authors.lastname: Wang
authors.forename: Ian T
authors.initials: IT
authors.lastname: Ferguson
authors.forename: John A
authors.initials: JA
authors.lastname: Buck