title: T-gate aligned nanotube radio frequency transistors and circuits with superior performance.
abstract: In this paper, we applied self-aligned T-gate design to aligned carbon nanotube array transistors and achieved an extrinsic current-gain cutoff frequency (ft) of 25 GHz, which is the best on-chip performance for nanotube radio frequency (RF) transistors reported to date. Meanwhile, an intrinsic current-gain cutoff frequency up to 102 GHz is obtained, comparable to the best value reported for nanotube RF transistors. Armed with the excellent extrinsic RF performance, we performed both single-tone and two-tone measurements for aligned nanotube transistors at a frequency up to 8 GHz. Furthermore, we utilized T-gate aligned nanotube transistors to construct mixing and frequency doubling analog circuits operated in gigahertz frequency regime. Our results confirm the great potential of nanotube-based circuit applications and indicate that nanotube transistors are promising building blocks in high-frequency electronics.
authors.affiliation: Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089, United States.
authors.forename: Yuchi
authors.initials: Y
authors.lastname: Che
authors.forename: Yung-Chen
authors.initials: YC
authors.lastname: Lin
authors.forename: Pyojae
authors.initials: P
authors.lastname: Kim
authors.forename: Chongwu
authors.initials: C
authors.lastname: Zhou