title: Investigations of morphology and formation mechanism of laser-induced annular/droplet-like structures on SiGe film.
abstract: We describe the fabrication of nanostructures on SiGe film by KrF excimer laser with nanosecond pulse width, and find a more direct and clear relationship between the laser irradiation conditions and the nanoscale structures. Perfect annular nanostructures around scattering points on the SiGe film are firstly obtained after the irradiation of a KrF excimer pulse laser beam (100 mJ/cm(2)) at different incident angles. The different shapes of annular structures are related to different energy distributions due to the optical interference between the scattered light and the incident beam. As laser energy increases, a threshold of pulse energy (230 mJ/cm(2)) is found, above which a droplet-like morphology completely replacing the surface annular structures. And the disorder morphology is mainly caused by the thermal effect of the incident beam.
authors.affiliation: Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China.
authors.forename: Dongfeng
authors.initials: D
authors.lastname: Qi
authors.forename: Hanhui
authors.initials: H
authors.lastname: Liu
authors.forename: Wei
authors.initials: W
authors.lastname: Gao
authors.forename: Songyan
authors.initials: S
authors.lastname: Chen
authors.forename: Cheng
authors.initials: C
authors.lastname: Li
authors.forename: Hongkai
authors.initials: H
authors.lastname: Lai
authors.forename: Wei
authors.initials: W
authors.lastname: Huang
authors.forename: Jun
authors.initials: J
authors.lastname: Li
mesh_terms: D005857:Germanium / Q000737:chemistry* / Q000528:radiation effects*; D007834:Lasers; D008422:Materials Testing; D053758:Nanoparticles / Q000737:chemistry* / Q000528:radiation effects* / Q000648:ultrastructure*; D012825:Silicon / Q000737:chemistry* / Q000528:radiation effects*; D013499:Surface Properties / Q000528:radiation effects
chemical_list: D005857:Germanium; D012825:Silicon