title: Gold-thickness-dependent Schottky barrier height for charge transfer in metal-assisted chemical etching of silicon.
abstract: Large-area, vertically aligned silicon nanowires with a uniform diameter along the height direction were fabricated by combining in situ-formed anodic aluminum oxide template and metal-assisted chemical etching. The etching rate of the Si catalyzed using a thick Au mesh is much faster than that catalyzed using a thin one, which is suggested to be induced by the charge transport process. The thick Au mesh in contact with the Si produces a low Au/Si Schottky barrier height, facilitating the injection of electronic holes from the Au to the Si, thus resulting in a high etching rate.
authors.affiliation: College of Physics and Electronics Information, Anhui Normal University, Wuhu 241000, China. zuozewen@126.com.
authors.forename: Zewen
authors.initials: Z
authors.lastname: Zuo
authors.forename: Guanglei
authors.initials: G
authors.lastname: Cui
authors.forename: Yi
authors.initials: Y
authors.lastname: Shi
authors.forename: Yousong
authors.initials: Y
authors.lastname: Liu
authors.forename: Guangbin
authors.initials: G
authors.lastname: Ji