title: Tunable surface electron spin splitting with electric double-layer transistors based on InN.
abstract: Electrically manipulating electron spins based on Rashba spin-orbit coupling (SOC) is a key pathway for applications of spintronics and spin-based quantum computation. Two-dimensional electron systems (2DESs) offer a particularly important SOC platform, where spin polarization can be tuned with an electric field perpendicular to the 2DES. Here, by measuring the tunable circular photogalvanic effect (CPGE), we present a room-temperature electric-field-modulated spin splitting of surface electrons on InN epitaxial thin films that is a good candidate to realize spin injection. The surface band bending and resulting CPGE current are successfully modulated by ionic liquid gating within an electric double-layer transistor configuration. The clear gate voltage dependence of CPGE current indicates that the spin splitting of the surface electron accumulation layer is effectively tuned, providing a way to modulate the injected spin polarization in potential spintronic devices.
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871 China.
authors.forename: Chunming
authors.initials: C
authors.lastname: Yin
authors.forename: Hongtao
authors.initials: H
authors.lastname: Yuan
authors.forename: Xinqiang
authors.initials: X
authors.lastname: Wang
authors.forename: Shitao
authors.initials: S
authors.lastname: Liu
authors.forename: Shan
authors.initials: S
authors.lastname: Zhang
authors.forename: Ning
authors.initials: N
authors.lastname: Tang
authors.forename: Fujun
authors.initials: F
authors.lastname: Xu
authors.forename: Zhuoyu
authors.initials: Z
authors.lastname: Chen
authors.forename: Hidekazu
authors.initials: H
authors.lastname: Shimotani
authors.forename: Yoshihiro
authors.initials: Y
authors.lastname: Iwasa
authors.forename: Yonghai
authors.initials: Y
authors.lastname: Chen
authors.forename: Weikun
authors.initials: W
authors.lastname: Ge
authors.forename: Bo
authors.initials: B
authors.lastname: Shen