title: High-power flip-chip mounted photodiode array.
abstract: Four-element modified uni-traveling-carrier (MUTC) photodiode arrays (PDA) flip-chip bonded onto transmission lines on AlN substrates are demonstrated. High RF output powers of 26.2 dBm and 21.0 dBm are achieved at 35 GHz and 48 GHz, respectively, using a PDA with 28-μm diameter photodiodes. A systematic comparison between a PDA with four 20 μm-diameter elements and a discrete detector with the same active area (40-μm diameter) is presented. The PDA achieved higher output power and thermal dissipation compared to its discrete counterpart.
authors.affiliation: Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Road, Charlottesville, VA 22904, USA. asc8y@virginia.edu
authors.forename: Allen S
authors.initials: AS
authors.lastname: Cross
authors.forename: Qiugui
authors.initials: Q
authors.lastname: Zhou
authors.forename: Andreas
authors.initials: A
authors.lastname: Beling
authors.forename: Yang
authors.initials: Y
authors.lastname: Fu
authors.forename: Joe C
authors.initials: JC
authors.lastname: Campbell
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D010783:Photometry / Q000295:instrumentation*; D012666:Semiconductors