title: Transit phenomena in organic field-effect transistors through Kelvin-probe force microscopy.
abstract: The temporal evolution of the surface-potential distribution in the channel of pentacene based field-effect transistors is investigated during the charge reversal from the electron to the hole dominated operation. This measurement allows the determination of the carrier density and electric field dependent hole mobility in the sub-threshold regime of the transistor.
authors.affiliation: Ruprecht-Karls-Universität Heidelberg, Centre for Advanced Materials, Im Neuenheimer Feld 270, 69120 Heidelberg, Germany. christian.melzer@kip.uni-heidelberg.de
authors.forename: Christian
authors.initials: C
authors.lastname: Melzer
authors.forename: Christopher
authors.initials: C
authors.lastname: Siol
authors.forename: Heinz
authors.initials: H
authors.lastname: von Seggern
keywords: field-effect mobility; kelvin-probe force microscopy; organic field-effect transistor; transient current