title: Flexible low-voltage organic transistors with high thermal stability at 250 °C.
abstract: Low-operating-voltage flexible organic thin-film transistors with high thermal stability using DPh-DNTT and SAM gate dielectrics are reported. The mobility of the transistors are decreased by 23% after heating to 250 °C for 30 min. Furthermore, flexible organic pseudo-CMOS inverter circuits, which are functional after heating to 200 °C, are demonstrated.
authors.affiliation: Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.
authors.forename: Tomoyuki
authors.initials: T
authors.lastname: Yokota
authors.forename: Kazunori
authors.initials: K
authors.lastname: Kuribara
authors.forename: Takeyoshi
authors.initials: T
authors.lastname: Tokuhara
authors.forename: Ute
authors.initials: U
authors.lastname: Zschieschang
authors.forename: Hagen
authors.initials: H
authors.lastname: Klauk
authors.forename: Kazuo
authors.initials: K
authors.lastname: Takimiya
authors.forename: Yuji
authors.initials: Y
authors.lastname: Sadamitsu
authors.forename: Masahiro
authors.initials: M
authors.lastname: Hamada
authors.forename: Tsuyoshi
authors.initials: T
authors.lastname: Sekitani
authors.forename: Takao
authors.initials: T
authors.lastname: Someya
mesh_terms: D004560:Electricity; D009930:Organic Chemicals / Q000737:chemistry*; D013696:Temperature; D014173:Transistors, Electronic
chemical_list: D009930:Organic Chemicals
keywords: organic electronics; organic field-effect transistors; self-assembled monolayer; thermal stability