title: Measurement of gain characteristics of semiconductor lasers by amplified spontaneous emissions from dual facets.
abstract: In this letter, we describe a novel gain measurement approach for semiconductor edge-emitting lasers, with which TE and TM gain spectra can be easily obtained by collecting the amplified spontaneous emissions at dual facets of the device. An unstrained and continuously-operated GaAs/AlGaAs single quantum well laser strip is used to illustrate this method. The measured gain spectra are compared with theoretical gain curves to analyze the gain polarization characteristics and the relevant subband structure in the valence band of the well using the measured gain spectra.
authors.affiliation: Department of Applied Physics, Beihang University, Beijing 100191, China.
authors.forename: M-L
authors.initials: ML
authors.lastname: Ma
authors.forename: J
authors.initials: J
authors.lastname: Wu
authors.forename: Y-Q
authors.initials: YQ
authors.lastname: Ning
authors.forename: F
authors.initials: F
authors.lastname: Zhou
authors.forename: M
authors.initials: M
authors.lastname: Yang
authors.forename: X
authors.initials: X
authors.lastname: Zhang
authors.forename: J
authors.initials: J
authors.lastname: Zhang
authors.forename: G-Y
authors.initials: GY
authors.lastname: Shang
mesh_terms: D000669:Amplifiers, Electronic; D004867:Equipment Design; D019544:Equipment Failure Analysis / Q000295:instrumentation* / Q000379:methods*; D054023:Lasers, Semiconductor