title: Thermal functionalization of GaN surfaces with 1-alkenes.
abstract: A thermally induced functionalization process for gallium nitride surfaces with 1-alkenes is introduced. The resulting functionalization layers are characterized with atomic force microscopy and X-ray photoelectron spectroscopy and compared to reference samples without and with a photochemically generated functionalization layer. The resulting layers show very promising characteristics as functionalization for GaN based biosensors. On the basis of the experimental results, important characteristics of the functionalization layers are estimated and a possible chemical reaction scheme is proposed.
authors.affiliation: Institute for Microsystems Engineering, University of Freiburg, Georges-Köhler-Allee 106, 79110 Freiburg, Germany.
authors.forename: Stefan U
authors.initials: SU
authors.lastname: Schwarz
authors.forename: Volker
authors.initials: V
authors.lastname: Cimalla
authors.forename: Georg
authors.initials: G
authors.lastname: Eichapfel
authors.forename: Marcel
authors.initials: M
authors.lastname: Himmerlich
authors.forename: Stefan
authors.initials: S
authors.lastname: Krischok
authors.forename: Oliver
authors.initials: O
authors.lastname: Ambacher
mesh_terms: D000475:Alkenes / Q000737:chemistry*; D005708:Gallium / Q000737:chemistry*; D015394:Molecular Structure; D010316:Particle Size; D013499:Surface Properties; D013696:Temperature
chemical_list: D000475:Alkenes; C473348:gallium nitride; D005708:Gallium