title: The curious case of exploding quantum dots: anomalous migration and growth behaviors of Ge under Si oxidation.
abstract: We have previously demonstrated the unique migration behavior of Ge quantum dots (QDs) through Si3N4 layers during high-temperature oxidation. Penetration of these QDs into the underlying Si substrate however, leads to a completely different behavior: the Ge QDs 'explode,' regressing back almost to their origins as individual Ge nuclei as formed during the oxidation of the original nanopatterned SiGe structures used for their generation. A kinetics-based model is proposed to explain the anomalous migration behavior and morphology changes of the Ge QDs based on the Si flux generated during the oxidation of Si-containing layers.
authors.affiliation: Department of Electrical Engineering, National Central University, Chung-Li 320, Taiwan. pwli@ee.ncu.edu.tw.
authors.forename: Ching-Chi
authors.initials: CC
authors.lastname: Wang
authors.forename: Po-Hsiang
authors.initials: PH
authors.lastname: Liao
authors.forename: Ming-Hao
authors.initials: MH
authors.lastname: Kuo
authors.forename: Tom
authors.initials: T
authors.lastname: George
authors.forename: Pei-Wen
authors.initials: PW
authors.lastname: Li