title: Hole traps and Cu-related shallow donors in ZnO nanorods revealed by temperature-dependent photoluminescence.
abstract: This work presents positive experimental evidence for the hole traps in ZnO nanorods, which take part in recombination and change the thermal quenching of Cu-related green emission. The evolution of Cu impurity upon annealing, as well as the formation of Cu-related shallow donors with an energy level of ∼0.11 eV are also indicated by temperature-dependent photoluminescence.
authors.affiliation: State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China. hphe@zju.edu.cn
authors.forename: Haiping
authors.initials: H
authors.lastname: He
authors.forename: Shuili
authors.initials: S
authors.lastname: Li
authors.forename: Luwei
authors.initials: L
authors.lastname: Sun
authors.forename: Zhizhen
authors.initials: Z
authors.lastname: Ye
mesh_terms: D003300:Copper / Q000737:chemistry*; D008163:Luminescent Measurements; D043942:Nanotubes / Q000737:chemistry*; D016062:Porosity; D013050:Spectrometry, Fluorescence; D013696:Temperature; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D003300:Copper; D015034:Zinc Oxide