title: Bipolar one diode-one resistor integration for high-density resistive memory applications.
abstract: Different from conventional unipolar-type 1D-1R RRAM devices, a bipolar-type 1D-1R memory device concept is proposed and successfully demonstrated by the integration of Ni/TiOx/Ti diode and Pt/HfO2/Cu bipolar RRAM cell to suppress the undesired sneak current in a cross-point array. The bipolar 1D-1R memory device not only achieves self-compliance resistive switching characteristics by the reverse bias current of the Ni/TiOx/Ti diode, but also exhibits excellent bipolar resistive switching characteristics such as uniform switching, satisfactory data retention, and excellent scalability, which give it high potentiality for high-density integrated nonvolatile memory applications.
authors.affiliation: Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
authors.forename: Yingtao
authors.initials: Y
authors.lastname: Li
authors.forename: Hangbing
authors.initials: H
authors.lastname: Lv
authors.forename: Qi
authors.initials: Q
authors.lastname: Liu
authors.forename: Shibing
authors.initials: S
authors.lastname: Long
authors.forename: Ming
authors.initials: M
authors.lastname: Wang
authors.forename: Hongwei
authors.initials: H
authors.lastname: Xie
authors.forename: Kangwei
authors.initials: K
authors.lastname: Zhang
authors.forename: Zongliang
authors.initials: Z
authors.lastname: Huo
authors.forename: Ming
authors.initials: M
authors.lastname: Liu