title: Integration of self-assembled vertically aligned nanocomposite (La0.7Sr0.3MnO3)(1-x):(ZnO)x thin films on silicon substrates.
abstract: Epitaxial (La0.7Sr0.3MnO3)(1-x):(ZnO)x (LSMO:ZnO) in vertically aligned nanocomposite (VAN) form was integrated on STO/TiN-buffered silicon substrates by pulsed-laser deposition. Their magnetotransport properties have been investigated and are systematically tuned through controlling the ZnO concentration. The composite film with 70% ZnO molar ratio exhibits a maximum magnetoresistance (MR) value of 55% at 70 K and 1 T. The enhanced tunable low-field MR properties are attributed to structural and magnetic disorders and spin-polarized tunneling through the secondary ZnO phase. The integration of LSMO:ZnO VAN films on silicon substrates is a critical step enabling the application of VAN films in future spintronic devices.
authors.forename: Wenrui
authors.initials: W
authors.lastname: Zhang
authors.forename: Aiping
authors.initials: A
authors.lastname: Chen
authors.forename: Fauzia
authors.initials: F
authors.lastname: Khatkhatay
authors.forename: Chen-Fong
authors.initials: CF
authors.lastname: Tsai
authors.forename: Qing
authors.initials: Q
authors.lastname: Su
authors.forename: Liang
authors.initials: L
authors.lastname: Jiao
authors.forename: Xinghang
authors.initials: X
authors.lastname: Zhang
authors.forename: Haiyan
authors.initials: H
authors.lastname: Wang