title: Nanometer size field effect transistors for terahertz detectors.
abstract: Nanometer size field effect transistors can operate as efficient resonant or broadband terahertz detectors, mixers, phase shifters and frequency multipliers at frequencies far beyond their fundamental cut-off frequency. This work is an overview of some recent results concerning the application of nanometer scale field effect transistors for the detection of terahertz radiation.
authors.affiliation: Laboratoire Charles Coulomb, UMR 5221, Université Montpellier 2 and CNRS, F-34950 Montpellier, France. knap.wojciech@gmail.com
authors.forename: W
authors.initials: W
authors.lastname: Knap
authors.forename: S
authors.initials: S
authors.lastname: Rumyantsev
authors.forename: M S
authors.initials: MS
authors.lastname: Vitiello
authors.forename: D
authors.initials: D
authors.lastname: Coquillat
authors.forename: S
authors.initials: S
authors.lastname: Blin
authors.forename: N
authors.initials: N
authors.lastname: Dyakonova
authors.forename: M
authors.initials: M
authors.lastname: Shur
authors.forename: F
authors.initials: F
authors.lastname: Teppe
authors.forename: A
authors.initials: A
authors.lastname: Tredicucci
authors.forename: T
authors.initials: T
authors.lastname: Nagatsuma
mesh_terms: D004867:Equipment Design; D036103:Nanotechnology / Q000295:instrumentation*; D011874:Radiometry / Q000295:instrumentation*; D012666:Semiconductors; D055069:Terahertz Imaging / Q000295:instrumentation*; D055068:Terahertz Spectroscopy / Q000295:instrumentation*; D014159:Transducers; D014173:Transistors, Electronic