title: Micro- and nanoscale electrical characterization of large-area graphene transferred to functional substrates.
abstract: Chemical vapour deposition (CVD) on catalytic metals is one of main approaches for high-quality graphene growth over large areas. However, a subsequent transfer step to an insulating substrate is required in order to use the graphene for electronic applications. This step can severely affect both the structural integrity and the electronic properties of the graphene membrane. In this paper, we investigated the morphological and electrical properties of CVD graphene transferred onto SiO2 and on a polymeric substrate (poly(ethylene-2,6-naphthalene dicarboxylate), briefly PEN), suitable for microelectronics and flexible electronics applications, respectively. The electrical properties (sheet resistance, mobility, carrier density) of the transferred graphene as well as the specific contact resistance of metal contacts onto graphene were investigated by using properly designed test patterns. While a sheet resistance R sh ≈ 1.7 kΩ/sq and a specific contact resistance ρc ≈ 15 kΩ·μm have been measured for graphene transferred onto SiO2, about 2.3× higher R sh and about 8× higher ρc values were obtained for graphene on PEN. High-resolution current mapping by torsion resonant conductive atomic force microscopy (TRCAFM) provided an insight into the nanoscale mechanisms responsible for the very high ρc in the case of graphene on PEN, showing a ca. 10× smaller "effective" area for current injection than in the case of graphene on SiO2.
authors.affiliation: CNR-IMM, VIII Strada, 5, 95121, Catania, Italy ; Department of Electronic Engineering, University of Catania, Viale A. Doria 6, 95125 Catania, Italy.
authors.forename: Gabriele
authors.initials: G
authors.lastname: Fisichella
authors.forename: Salvatore
authors.initials: S
authors.lastname: Di Franco
authors.forename: Patrick
authors.initials: P
authors.lastname: Fiorenza
authors.forename: Raffaella
authors.initials: R
authors.lastname: Lo Nigro
authors.forename: Fabrizio
authors.initials: F
authors.lastname: Roccaforte
authors.forename: Cristina
authors.initials: C
authors.lastname: Tudisco
authors.forename: Guido G
authors.initials: GG
authors.lastname: Condorelli
authors.forename: Nicolò
authors.initials: N
authors.lastname: Piluso
authors.forename: Noemi
authors.initials: N
authors.lastname: Spartà
authors.forename: Stella
authors.initials: S
authors.lastname: Lo Verso
authors.forename: Corrado
authors.initials: C
authors.lastname: Accardi
authors.forename: Cristina
authors.initials: C
authors.lastname: Tringali
authors.forename: Sebastiano
authors.initials: S
authors.lastname: Ravesi
authors.forename: Filippo
authors.initials: F
authors.lastname: Giannazzo
keywords: PEN; SiO2; conductive AFM; contact resistance; graphene; mobility; sheet resistance