title: Optoelectrical and low-frequency noise characteristics of flexible ZnO-SiO2 photodetectors with organosilicon buffer layer.
abstract: The present study demonstrates the optoelectrical and low-frequency noise characteristics of ZnO-SiO(2) nanocomposite solar-blind metal-semiconductor-metal photodetectors (MSM PDs) on flexible polyethersulfone (PES) substrate with and without an organosilicon [SiO(x)(CH(3))] buffer layer. For a given bandwidth of 100 Hz and a -5 V applied bias, the noise equivalent powers of the ZnO-SiO(2) nanocomposite MSM PD on PES with and without the SiO(x)(CH(3)) buffer layer were 1.39 × 10(-14) and 5.72 × 10(-14) W at 240nm, respectively, corresponding to the normalized detectivities of 5.04 × 10(14) and 1.22 × 10(14) Hz(0.5) W(-1), respectively. These findings indicate that a lower noise level and a higher detectivity can be achieved for ZnO-SiO(2) nanocomposite MSM PDs on PES by introducing a SiO(x)(CH(3)) buffer layer.
authors.affiliation: Institute of Electro-Optical Science and Engineering, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan City 70101, Taiwan. weilai@mail.ncku.edu.tw
authors.forename: Wei-Chih
authors.initials: WC
authors.lastname: Lai
authors.forename: Jiun-Ting
authors.initials: JT
authors.lastname: Chen
authors.forename: Ya-Yu
authors.initials: YY
authors.lastname: Yang
mesh_terms: D004553:Electric Conductivity; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008027:Light; D009930:Organic Chemicals / Q000737:chemistry* / Q000528:radiation effects; D010783:Photometry / Q000295:instrumentation*; D012666:Semiconductors; D059629:Signal-To-Noise Ratio; D012822:Silicon Dioxide / Q000737:chemistry* / Q000528:radiation effects; D015034:Zinc Oxide / Q000737:chemistry* / Q000528:radiation effects
chemical_list: D009930:Organic Chemicals; D012822:Silicon Dioxide; D015034:Zinc Oxide