title: Strain- and electric field-induced band gap modulation in nitride nanomembranes.
abstract: The hexagonal nanomembranes of the group III-nitrides are a subject of interest due to their novel technological applications. In this paper, we investigate the strain- and electric field-induced modulation of their band gaps in the framework of density functional theory. For AlN, the field-dependent modulation of the bandgap is found to be significant whereas the strain-induced semiconductor-metal transition is predicted for GaN. A relatively flat conduction band in AlN and GaN nanomembranes leads to an enhancement of their electronic mobility compared to that of their bulk counterparts.
authors.affiliation: Department of Physics, Michigan Technological University, Houghton, MI 49931, USA.
authors.forename: Rodrigo G
authors.initials: RG
authors.lastname: Amorim
authors.forename: Xiaoliang
authors.initials: X
authors.lastname: Zhong
authors.forename: Saikat
authors.initials: S
authors.lastname: Mukhopadhyay
authors.forename: Ravindra
authors.initials: R
authors.lastname: Pandey
authors.forename: Alexandre R
authors.initials: AR
authors.lastname: Rocha
authors.forename: Shashi P
authors.initials: SP
authors.lastname: Karna
mesh_terms: D003198:Computer Simulation; D055119:Elastic Modulus / Q000528:radiation effects; D004553:Electric Conductivity; D004574:Electromagnetic Fields; D004579:Electron Transport / Q000528:radiation effects; D008422:Materials Testing; D008567:Membranes, Artificial; D008956:Models, Chemical; D008958:Models, Molecular; D049329:Nanostructures / Q000737:chemistry* / Q000528:radiation effects* / Q000648:ultrastructure; D009584:Nitrogen / Q000737:chemistry* / Q000528:radiation effects*; D010316:Particle Size; D012666:Semiconductors
chemical_list: D008567:Membranes, Artificial; D009584:Nitrogen