title: Carbon nanotube complementary wrap-gate transistors.
abstract: Among the challenges hindering the integration of carbon nanotube (CNT) transistors in digital technology are the lack of a scalable self-aligned gate and complementary n- and p-type devices. We report CNT transistors with self-aligned gates scaled down to 20 nm in the ideal gate-all-around geometry. Uniformity of the gate wrapping the nanotube channels is confirmed, and the process is shown not to damage the CNTs. Further, both n- and p-type transistors were realized by using the appropriate gate dielectric-HfO2 yielded n-type and Al2O3 yielded p-type-with quantum simulations used to explore the impact of important device parameters on performance. These discoveries not only provide a promising platform for further research into gate-all-around CNT devices but also demonstrate that scalable digital switches with realistic technological potential can be achieved with carbon nanotubes.
authors: IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA. aaronf@us.ibm.com
authors: Aaron D
authors: AD
authors: Franklin
authors: Siyuranga O
authors: SO
authors: Koswatta
authors: Damon B
authors: DB
authors: Farmer
authors: Joshua T
authors: JT
authors: Smith
authors: Lynne
authors: L
authors: Gignac
authors: Chris M
authors: CM
authors: Breslin
authors: Shu-Jen
authors: SJ
authors: Han
authors: George S
authors: GS
authors: Tulevski
authors: Hiroyuki
authors: H
authors: Miyazoe
authors: Wilfried
authors: W
authors: Haensch
authors: Jerry
authors: J
authors: Tersoff