title: GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications.
abstract: As a highly sensitive strain gauge element, GaAs-based resonant tunneling diode (RTD) has already been applied in microelectromechanical system (MEMS) sensors. Due to poor mechanical properties and high cost, GaAs-based material has been limited in applications as the substrate for MEMS. In this work, we present a method to fabricate the GaAs-based RTD on Si substrate. From the experimental results, it can be concluded that the piezoresistive coefficient achieved with this method reached 3.42 × 10-9 m2/N, which is about an order of magnitude higher than the Si-based semiconductor piezoresistors.
authors: Key Laboratory of Instrumentation Science & Dynamic Measurement, North University of China, Ministry of Education, Shanxi, 030051, China. tangjun@nuc.edu.cn.
authors: Jie
authors: J
authors: Li
authors: Hao
authors: H
authors: Guo
authors: Jun
authors: J
authors: Liu
authors: Jun
authors: J
authors: Tang
authors: Haiqiao
authors: H
authors: Ni
authors: Yunbo
authors: Y
authors: Shi
authors: Chenyang
authors: C
authors: Xue
authors: Zhichuan
authors: Z
authors: Niu
authors: Wendong
authors: W
authors: Zhang
authors: Mifeng
authors: M
authors: Li
authors: Ying
authors: Y
authors: Yu
references: Sensors (Basel). 2008 Apr 14;8(4):2642-2661
references: 27879841