title: Application of three-step epitaxial process to dual trench epitaxial diode array.
abstract: The application of three-step Epitaxial (EPI) process to dual trench epitaxial diode array for high density phase change random access memory (PCRAM) was reported in this paper. With three-step EPI process condition, both vertical and lateral Arsenic auto-doping were suppressed effectively from Arsenic heavily-doped substrate. It was found that EPI layer (- 300 nm) with high-quality single crystalline and good thickness uniformity within 200 mm diameter wafer could be achieved. It was also found that both lateral and vertical Arsenic auto-doping concentration could be reduced by 2-3 orders by adding high temperature and low deposition rate EPI step before main EPI process, as compared to the conventional CVD EPI process. As a result, diode breakdown voltage was improved above 11 V and the On/Off current ratio of diode is greater than 9 orders of magnitude.
authors: State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
authors: Chao
authors: C
authors: Zhang
authors: Guan-Ping
authors: GP
authors: Wu
authors: Zhi-Tang
authors: ZT
authors: Song
authors: Bo
authors: B
authors: Liu
authors: Lian-Hong
authors: LH
authors: Wang
authors: Yan
authors: Y
authors: Liu
authors: Zuoya
authors: Z
authors: Yang
authors: Songlin
authors: S
authors: Feng