title: Study on the crystallization process of GaSb-Sb2Te3 pseudobinary films for phase-change random access memory.
abstract: Non-isothermal change in electrical resistance was used to investigate the crystallization process of GaSb-Sb2Te3 pseudobinary films prepared by co-sputtering using GaSb and Sb2Te3 targets. The crystallization parameters were determined directly by in-situ electrical resistance-temperature measurements. The activation energy of crystallization and rate factor were deduced from the Kissinger's plot. The kinetics exponent was calculated using the Ozawa's method. The crystallization temperature (185-228 degrees C) and activation energy (2.01-5.65 eV) increased monotonically with increasing Ga concentration from 5 to 34 mol%, while the average kinetics exponent decreased from 1.63 to 1.02. The crystallization mechanism of the compositions with Ga concentration more than 10 mol% was one-dimensional growth from the nuclei due to the average kinetics exponent smaller than 1.5. Crystallization time of the studied compositions was estimated theoretically by the Johnson-Mehl-Avrami equation and measured experimentally by the reflectivity change induced by the laser pulse. It is shown that Ga27Sb47Te26 film exhibited the shortest crystallization time, suggesting a potential candidate for phase-change random access memory application.
authors: State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
authors: Yegang
authors: Y
authors: Lu
authors: Simian
authors: S
authors: Li
authors: Sannian
authors: S
authors: Song
authors: Zhitang
authors: Z
authors: Song
authors: Bo
authors: B
authors: Liu
authors: Ting
authors: T
authors: Wen
authors: Tianshu
authors: T
authors: Lai