title: Room-temperature polariton lasing from GaN nanowire array clad by dielectric microcavity.
abstract: Room-temperature polariton lasing from a GaN-dielectric microcavity is demonstrated with optical excitation. The device is fabricated with a GaN nanowire array clad by Si3N4/SiO2-distributed Bragg reflectors. The nanowire array is initially grown on silicon substrate by molecular beam epitaxy. A distinct nonlinearity in the lower polariton emission is observed at a threshold optical energy density of 625 nJ/cm(2), accompanied by significant line width narrowing to 5 meV and a small blue shift of ~1 meV. The measured polariton dispersion is characterized by a Rabi splitting of 40 meV and a cavity exciton detuning of -17 meV. The device described here is a demonstration of exciton-photon strong coupling phenomenon in an array of light emitters and paves the way for the realization of a room temperature electrically injected polariton laser.
authors: Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, USA.
authors: Junseok
authors: J
authors: Heo
authors: Shafat
authors: S
authors: Jahangir
authors: Bo
authors: B
authors: Xiao
authors: Pallab
authors: P
authors: Bhattacharya