title: Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction.
abstract: Electrically pumped lasing action has been realized in ZnO from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterostructure, an ultralow threshold of 3.9 mA was obtained. The mechanism of the laser is associated with the in-plane random resonator cavities formed in the ZnO films and the elaborate hollow-shaped SiO2 cladding pattern, which prevent the lateral diffusion of injection current and ultimately lower the threshold current of the laser diode. In addition, a waveguide mechanism due to different refractive indices of three epilayers enhances the guided optical field on the ZnO side, resulting in an improved light extraction efficiency.
authors: State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun, 130012, China.
authors: Zhi-Feng
authors: ZF
authors: Shi
authors: Yuan-Tao
authors: YT
authors: Zhang
authors: Xiao-Chuan
authors: XC
authors: Xia
authors: Wang
authors: W
authors: Zhao
authors: Hui
authors: H
authors: Wang
authors: Long
authors: L
authors: Zhao
authors: Xin
authors: X
authors: Dong
authors: Bao-Lin
authors: BL
authors: Zhang
authors: Guo-Tong
authors: GT
authors: Du