title: Anisotropic nano-column arrays of bismuth and its conductivity.
abstract: Anisotropic nanostructures are becoming more and more attractive due to their unique properties different from isotropic nanostructures. However, previous most of studies are limited to high melting point materials with poor crystalline, which has confined their extended applications. In this work, we successfully prepared the anisotropic nano-column arrays of bismuth (melting point: 271.3 degrees C) with improved crystallinity by glancing angle deposition. The anisotropic conductivity of the products is investigated, and its origin is ascribed to the anisotropic scattering of the carriers in the boundary layer. Our work is not only helpful to understand the anisotropic nanostructures fabricated by glancing angle deposition on both their growth and properties, as well as provides an approachable route for constructing functional devices based on Bi and its anisotropic nanostructures.
authors: National Center for Nanoscience and Technology, China. No. 11, Beiyitiao, Zhongguancun, Beijing 100190, China.
authors: Ye
authors: Y
authors: Tian
authors: Shengming
authors: S
authors: Guo
authors: Qian
authors: Q
authors: Liu