title: Interface properties of SiOxNy layer on Si prepared by atmospheric-pressure plasma oxidation-nitridation.
abstract: SiOxNy films with a low nitrogen concentration (< 4%) have been prepared on Si substrates at 400°C by atmospheric-pressure plasma oxidation-nitridation process using O2 and N2 as gaseous precursors diluted in He. Interface properties of SiOxNy films have been investigated by analyzing high-frequency and quasistatic capacitance-voltage characteristics of metal-oxide-semiconductor capacitors. It is found that addition of N into the oxide increases both interface state density (Dit) and positive fixed charge density (Qf). After forming gas anneal, Dit decreases largely with decreasing N2/O2 flow ratio from 1 to 0.01 while the change of Qf is insignificant. These results suggest that low N2/O2 flow ratio is a key parameter to achieve a low Dit and relatively high Qf, which is effective for field effect passivation of n-type Si surfaces.
authors: Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan. zhuozeteng@gmail.com.
authors: Zeteng
authors: Z
authors: Zhuo
authors: Yuta
authors: Y
authors: Sannomiya
authors: Yuki
authors: Y
authors: Kanetani
authors: Takahiro
authors: T
authors: Yamada
authors: Hiromasa
authors: H
authors: Ohmi
authors: Hiroaki
authors: H
authors: Kakiuchi
authors: Kiyoshi
authors: K
authors: Yasutake