title: Upgraded silicon nanowires by metal-assisted etching of metallurgical silicon: a new route to nanostructured solar-grade silicon.
abstract: Through metal-assisted chemical etching (MaCE), superior purification of dirty Si is observed, from 99.74 to 99.9884% for metallurgical Si and from 99.999772 to 99.999899% for upgraded metallurgical Si. In addition, large area of silicon nanowires (SiNW) are fabricated. The purification effect induces a ∼35% increase in photocurrent for SiNW based photoelectrochemical cell.
authors: Max-Planck Institute of Microstructure Physics, Weinberg 2, Halle 06120, Germany.
authors: Xiaopeng
authors: X
authors: Li
authors: Yanjun
authors: Y
authors: Xiao
authors: Jin Ho
authors: JH
authors: Bang
authors: Dominik
authors: D
authors: Lausch
authors: Sylke
authors: S
authors: Meyer
authors: Paul-Tiberiu
authors: PT
authors: Miclea
authors: Jin-Young
authors: JY
authors: Jung
authors: Stefan L
authors: SL
authors: Schweizer
authors: Jung-Ho
authors: JH
authors: Lee
authors: Ralf B
authors: RB
authors: Wehrspohn
mesh_terms: D004566:Electrodes; D006859:Hydrogen / Q000737:chemistry; D053770:Nanowires / Q000737:chemistry* / Q000648:ultrastructure; D016062:Porosity; D012825:Silicon / Q000737:chemistry*; D012993:Solar Energy; D013499:Surface Properties
chemical_list: D006859:Hydrogen; D012825:Silicon