title: Exciton lifetime measurements on single silicon quantum dots.
abstract: We measured the exciton lifetime of single silicon quantum dots, fabricated by electron beam lithography, reactive ion etching and oxidation. The observed photoluminescence decays are of mono-exponential character with a large variation (5-45 μs) from dot to dot, even for the same emission energy. We show that this lifetime variation may be the origin of the heavily debated non-exponential (stretched) decays typically observed for ensemble measurements.
authors: Materials and Nano Physics, School of ICT, KTH Royal Institute of Technology, SE-164 40 Kista, Sweden. fatsan@kth.se
authors: Fatemeh
authors: F
authors: Sangghaleh
authors: Benjamin
authors: B
authors: Bruhn
authors: Torsten
authors: T
authors: Schmidt
authors: Jan
authors: J
authors: Linnros