title: Conductance enhancement of InAs/InP heterostructure nanowires by surface functionalization with oligo(phenylene vinylene)s.
abstract: We have investigated the electronic transport through 3 μm long, 45 nm diameter InAs nanowires comprising a 5 nm long InP segment as electronic barrier. After assembly of 12 nm long oligo(phenylene vinylene) derivative molecules onto these InAs/InP nanowires, we observed a pronounced, nonlinear I-V characteristic with significantly increased currents of up to 1 μA at 1 V bias, for a back-gate voltage of 3 V. As supported by our model calculations based on a nonequilibrium Green Function approach, we attribute this effect to charge transport through those surface-bound molecules, which electrically bridge both InAs regions across the embedded InP barrier.
authors: Institut für Halbleitertechnik, Technische Universität Braunschweig, Germany.
authors: Muhammed Ihab
authors: MI
authors: Schukfeh
authors: Kristian
authors: K
authors: Storm
authors: Ahmed
authors: A
authors: Mahmoud
authors: Roar R
authors: RR
authors: Søndergaard
authors: Anna
authors: A
authors: Szwajca
authors: Allan
authors: A
authors: Hansen
authors: Peter
authors: P
authors: Hinze
authors: Thomas
authors: T
authors: Weimann
authors: Sofia Fahlvik
authors: SF
authors: Svensson
authors: Achyut
authors: A
authors: Bora
authors: Kimberly A
authors: KA
authors: Dick
authors: Claes
authors: C
authors: Thelander
authors: Frederik C
authors: FC
authors: Krebs
authors: Paolo
authors: P
authors: Lugli
authors: Lars
authors: L
authors: Samuelson
authors: Marc
authors: M
authors: Tornow