title: Broadband Ge/SiGe quantum dot photodetector on pseudosubstrate.
abstract: : We report the fabrication and characterization of a ten-period Ge quantum dot photodetector grown on SiGe pseudosubstrate. The detector exhibits tunable photoresponse in both 3- to 5- μm and 8- to 12- μm spectral regions with responsivity values up to about 1 mA/W at a bias of -3 V and operates under normal incidence radiation with background limited performance at 100 K. The relative response in the mid- and long-wave atmospheric windows could be controlled through the applied voltage.
authors: Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Prospekt Lavrent'eva 13, Novosibirsk 630090, Russia. yakimov@isp.nsc.ru.
authors: Andrew
authors: A
authors: Yakimov
authors: Victor
authors: V
authors: Kirienko
authors: Vladislav
authors: V
authors: Armbrister
authors: Anatolii
authors: A
authors: Dvurechenskii
references: Nanoscale Res Lett. 2012 Aug 31;7(1):494
references: 22938028