title: High-performance vertical organic transistors.
abstract: Vertical organic thin-film transistors (VOTFTs) are promising devices to overcome the transconductance and cut-off frequency restrictions of horizontal organic thin-film transistors. The basic physical mechanisms of VOTFT operation, however, are not well understood and VOTFTs often require complex patterning techniques using self-assembly processes which impedes a future large-area production. In this contribution, high-performance vertical organic transistors comprising pentacene for p-type operation and C60 for n-type operation are presented. The static current-voltage behavior as well as the fundamental scaling laws of such transistors are studied, disclosing a remarkable transistor operation with a behavior limited by injection of charge carriers. The transistors are manufactured by photolithography, in contrast to other VOTFT concepts using self-assembled source electrodes. Fluorinated photoresist and solvent compounds allow for photolithographical patterning directly and strongly onto the organic materials, simplifying the fabrication protocol and making VOTFTs a prospective candidate for future high-performance applications of organic transistors.
authors: Institut für Angewandte Photophysik, Technische Universität Dresden, 01069 Dresden, Germany, Website: www.iapp.de. hans.kleemann@iapp.de.
authors: Hans
authors: H
authors: Kleemann
authors: Alrun A
authors: AA
authors: Günther
authors: Karl
authors: K
authors: Leo
authors: Björn
authors: B
authors: Lüssem
keywords: molecular devices; organic thin-film transistors; short channel effects; vertical organic thin-film transistors