title: Giant electroresistance of super-tetragonal BiFeO3-based ferroelectric tunnel junctions.
abstract: Ferroelectric tunnel junctions enable a nondestructive readout of the ferroelectric state via a change of resistance induced by switching the ferroelectric polarization. We fabricated submicrometer solid-state ferroelectric tunnel junctions based on a recently discovered polymorph of BiFeO3 with giant axial ratio ("T-phase"). Applying voltage pulses to the junctions leads to the highest resistance changes (OFF/ON ratio >10,000) ever reported with ferroelectric tunnel junctions. Along with the good retention properties, this giant effect reinforces the interest in nonvolatile memories based on ferroelectric tunnel junctions. We also show that the changes in resistance scale with the nucleation and growth of ferroelectric domains in the ultrathin BiFeO3 (imaged by piezoresponse force microscopy), thereby suggesting potential as multilevel memory cells and memristors.
authors: Unité Mixte de Physique CNRS/Thales , 1 Avenue Augustin Fresnel, Campus de Polytechnique, 91767 Palaiseau, France.
authors: Hiroyuki
authors: H
authors: Yamada
authors: Vincent
authors: V
authors: Garcia
authors: Stéphane
authors: S
authors: Fusil
authors: Sören
authors: S
authors: Boyn
authors: Maya
authors: M
authors: Marinova
authors: Alexandre
authors: A
authors: Gloter
authors: Stéphane
authors: S
authors: Xavier
authors: Julie
authors: J
authors: Grollier
authors: Eric
authors: E
authors: Jacquet
authors: Cécile
authors: C
authors: Carrétéro
authors: Cyrile
authors: C
authors: Deranlot
authors: Manuel
authors: M
authors: Bibes
authors: Agnès
authors: A
authors: Barthélémy