title: Large spin splitting of metallic surface-state bands at adsorbate-modified gold/silicon surfaces.
abstract: Finding appropriate systems with a large spin splitting of metallic surface-state band which can be fabricated on silicon using routine technique is an essential step in combining Rashba-effect based spintronics with silicon technology. We have found that originally poor structural and electronic properties of the Au/Si(111) √3 x √3 surface can be substantially improved by adsorbing small amounts of suitable species (e.g., Tl, In, Na, Cs). The resultant surfaces exhibit a highly-ordered atomic structure and spin-split metallic surface-state band with a momentum splitting of up to 0.052 Å(-1) and an energy splitting of up to 190 meV at the Fermi level. The family of adsorbate-modified Au/Si(111) √3 x √3 surfaces, on the one hand, is thought to be a fascinating playground for exploring spin-splitting effects in the metal monolayers on a semiconductor and, on the other hand, expands greatly the list of material systems prospective for spintronics applications.
authors: Institute of Automation and Control Processes, 690041 Vladivostok, Russia.
authors: L V
authors: LV
authors: Bondarenko
authors: D V
authors: DV
authors: Gruznev
authors: A A
authors: AA
authors: Yakovlev
authors: A Y
authors: AY
authors: Tupchaya
authors: D
authors: D
authors: Usachov
authors: O
authors: O
authors: Vilkov
authors: A
authors: A
authors: Fedorov
authors: D V
authors: DV
authors: Vyalikh
authors: S V
authors: SV
authors: Eremeev
authors: E V
authors: EV
authors: Chulkov
authors: A V
authors: AV
authors: Zotov
authors: A A
authors: AA
authors: Saranin
references: Phys Rev Lett. 1996 Oct 14;77(16):3419-3422
references: 10062215
references: Phys Rev Lett. 2007 May 4;98(18):186807
references: 17501597
references: Phys Rev Lett. 2006 Dec 1;97(22):226405
references: 17155823
references: Nat Commun. 2010 May 17;1:17
references: 20975678
references: Phys Rev B Condens Matter. 1993 Jul 15;48(3):1632-1642
references: 10008524
references: Phys Rev B Condens Matter. 1994 Dec 15;50(24):17953-17979
references: 9976227
references: Phys Rev Lett. 2009 Jul 24;103(4):046803
references: 19659381
references: Phys Rev Lett. 2004 Jul 23;93(4):046403
references: 15323779
references: Phys Rev Lett. 1996 Oct 28;77(18):3865-3868
references: 10062328
references: J Phys Condens Matter. 2013 Jan 30;25(4):045007
references: 23248164
references: Phys Rev B Condens Matter. 1995 Feb 15;51(7):4231-4235
references: 9979262
references: Phys Rev Lett. 2009 Mar 6;102(9):096805
references: 19392551
references: Phys Rev Lett. 2013 Jan 18;110(3):036801
references: 23373940
references: Phys Rev Lett. 2004 Mar 26;92(12):126603
references: 15089695
references: Phys Rev B Condens Matter. 1993 Jan 1;47(1):558-561
references: 10004490
references: Phys Rev Lett. 2012 May 4;108(18):186801
references: 22681100
references: Phys Rev Lett. 2009 Oct 9;103(15):156801
references: 19905655
references: Phys Rev Lett. 2010 Aug 13;105(7):076804
references: 20868068