title: Universal electric-field-driven resistive transition in narrow-gap Mott insulators.
abstract: A striking universality in the electric-field-driven resistive switching is shown in three prototypical narrow-gap Mott systems. This model, based on key theoretical features of the Mott phenomenon, reproduces the general behavior of this resistive switching and demonstrates that it can be associated with a dynamically directed avalanche. This model predicts non-trivial accumulation and relaxation times that are verified experimentally.
authors: Laboratoire de Physique des Solides, CNRS UMR 8502, Université Paris Sud, Bât 510, 91405 Orsay, France. pablo-alberto.stoliar@u-psud.fr
authors: Pablo
authors: P
authors: Stoliar
authors: Laurent
authors: L
authors: Cario
authors: Etiene
authors: E
authors: Janod
authors: Benoit
authors: B
authors: Corraze
authors: Catherine
authors: C
authors: Guillot-Deudon
authors: Sabrina
authors: S
authors: Salmon-Bourmand
authors: Vincent
authors: V
authors: Guiot
authors: Julien
authors: J
authors: Tranchant
authors: Marcelo
authors: M
authors: Rozenberg