title: Ultralow contact resistance at an epitaxial metal/oxide heterojunction through interstitial site doping.
abstract: Heteroepitaxial growth of Cr metal on Nb-doped SrTiO₃(001) is accompanied by Cr diffusion to interstitial sites within the first few atomic planes, an anchoring of the Cr film to the substrate, charge transfer from Cr to Ti, and metallization of the near-surface region, as depicted in the figure. The contact resistance of the resulting interface is exceedingly low.
authors: Fundamental and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA 99352, USA. sa.chambers@pnnl.gov
authors: Scott A
authors: SA
authors: Chambers
authors: Meng
authors: M
authors: Gu
authors: Peter V
authors: PV
authors: Sushko
authors: Hao
authors: H
authors: Yang
authors: Chongmin
authors: C
authors: Wang
authors: Nigel D
authors: ND
authors: Browning
mesh_terms: D017097:Electric Impedance; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008422:Materials Testing; D008670:Metals / Q000737:chemistry*; D008839:Microelectrodes; D010087:Oxides / Q000737:chemistry*
chemical_list: D008670:Metals; D010087:Oxides
keywords: first-principles modeling; metal/oxide interfaces; ohmic contacts; scanning transmission electron microscopy; x-ray and ultraviolet photoemission