title: X-ray photoelectron spectroscopy study of SnO2 and SnO2+x thin films.
abstract: SnO2 thin films were fabricated using low-pressure thermal chemical vapor deposition. The results of X-ray photoelectron spectroscopy revealed that the SiO2 layer with an O1S-binding energy of 531.2 eV was formed before the SnO2 layer with an O1S-binding energy of 530.5 eV was formed. In the beginning, the SnO2 thin film showed Sn3d5-binding energy peaks of 485 eV and 486.5 eV. Subsequently, it grew in the direction of 486.5 eV. The Sn3d5-binding strength of the SnO2+x thin film that was annealed in oxygen atmosphere was weaker than that of the SnO2 thin film. Additionally, the Sn3d5-binding strength decreased linearly as the depth of the thin film increased. The surface O1S-binding strength of the SnO2+x thin film annealed in oxygen atmosphere was stronger than that of the SnO2 thin film; however, this strength became weaker than that that of the SnO2 thin film when the depth of the thin film was 2500A or higher.
authors: Department of Physics, Chosun University, Gwang Ju, 501-759, South Korea.
authors: Jin
authors: J
authors: Jeong
authors: Bong Ju
authors: BJ
authors: Lee
mesh_terms: D008422:Materials Testing; D008567:Membranes, Artificial; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D056951:Photoelectron Spectroscopy / Q000379:methods*; D013499:Surface Properties; D017971:Tin Compounds / Q000737:chemistry*
chemical_list: D008567:Membranes, Artificial; D017971:Tin Compounds; C045358:stannic oxide