title: Structural and optical investigation of GaInP quantum dots according to the growth thickness for the 700 nm light emitters.
abstract: We investigate Ga0.33In0.67P quantum dot structures appropriate for special lighting applications in terms of structural and optical behaviors. The Ga0.33In0.67P materials form from 2-dimentional to 3-dimensional dots as the nominal growth thickness increases from 0.5 nm to 6.0 nm, indicating a Stranski-Krastanov growth mode. As the ambient temperature is increased to 300 K, the PL spectrum of the B-type dots is annihilated quickly because the large dot size induces a defect-related nonradiative recombination process. In contrast, the PL spectrum of the A-type dots is well maintained to 300 K. These data indicate that the Ga0.33In0.67P material is appropriate for an active layer of 700 nm light emitters.
authors: LED Device Research Center, Korea Photonics Technology Institute, 971-35 Wolchul-dong, Buk-gu, Gwangju, Korea.
authors: Hwa Sub
authors: HS
authors: Oh
authors: Ho Soung
authors: HS
authors: Ryu
authors: Joon Mo
authors: JM
authors: Park
authors: Hyung Joo
authors: HJ
authors: Lee
authors: Young Jin
authors: YJ
authors: Kim
authors: In Kyu
authors: IK
authors: Jang
authors: Ji Hoon
authors: JH
authors: Park
authors: Joon Seop
authors: JS
authors: Kwak
authors: Jong Hyeob
authors: JH
authors: Baek
mesh_terms: D003460:Crystallization / Q000379:methods*; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D010316:Particle Size; D010720:Phosphines / Q000737:chemistry*; D045663:Quantum Dots; D013499:Surface Properties
chemical_list: D046911:Macromolecular Substances; D010720:Phosphines; D007204:Indium; C485338:gallium phosphide; D005708:Gallium; C090882:indium phosphide