title: Broadband high photoresponse from pure monolayer graphene photodetector.
abstract: Graphene has attracted large interest in photonic applications owing to its promising optical properties, especially its ability to absorb light over a broad wavelength range, which has lead to several studies on pure monolayer graphene-based photodetectors. However, the maximum responsivity of these photodetectors is below 10 mA W(-1), which significantly limits their potential for applications. Here we report high photoresponsivity (with high photoconductive gain) of 8.61 A W(-1) in pure monolayer graphene photodetectors, about three orders of magnitude higher than those reported in the literature, by introducing electron trapping centres and by creating a bandgap in graphene through band structure engineering. In addition, broadband photoresponse with high photoresponsivity from the visible to the mid-infrared is experimentally demonstrated. To the best of our knowledge, this work demonstrates the broadest photoresponse with high photoresponsivity from pure monolayer graphene photodetectors, proving the potential of graphene as a promising material for efficient optoelectronic devices.
authors: School of Electrical and Electronic Engineering, 50 Nanyang Avenue, Nanyang Technological University, Singapore 639798, Singapore.
authors: By Yongzhe
authors: BY
authors: Zhang
authors: Tao
authors: T
authors: Liu
authors: Bo
authors: B
authors: Meng
authors: Xiaohui
authors: X
authors: Li
authors: Guozhen
authors: G
authors: Liang
authors: Xiaonan
authors: X
authors: Hu
authors: Qi Jie
authors: QJ
authors: Wang
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