title: Improvement in crystal quality and optical properties of n-type GaN employing nano-scale SiO2 patterned n-type GaN substrate.
abstract: n-type GaN epitaxial layers were regrown on the patterned n-type GaN substrate (PNS) with different size of silicon dioxide (SiO2) nano dots to improve the crystal quality and optical properties. PNS with SiO2 nano dots promotes epitaxial lateral overgrowth (ELOG) for defect reduction and also acts as a light scattering point. Transmission electron microscopy (TEM) analysis suggested that PNS with SiO2 nano dots have superior crystalline properties. Hall measurements indicated that incrementing values in electron mobility were clear indication of reduction in threading dislocation and it was confirmed by TEM analysis. Photoluminescence (PL) intensity was enhanced by 2.0 times and 3.1 times for 1-step and 2-step PNS, respectively.
authors: Interdisciplinary Program of Photonic Engineering, Chonnam National University, Yongbong 300 Gwangju 500-757, Korea.
authors: Min Sung
authors: MS
authors: Jo
authors: Karthikeyan Giri
authors: KG
authors: Sadasivam
authors: Wael Z
authors: WZ
authors: Tawfik
authors: Seung Bea
authors: SB
authors: Yang
authors: Jung Ju
authors: JJ
authors: Lee
authors: Jun Seok
authors: JS
authors: Ha
authors: Young Boo
authors: YB
authors: Moon
authors: Sang Wan
authors: SW
authors: Ryu
authors: June Key
authors: JK
authors: Lee
mesh_terms: D003460:Crystallization / Q000379:methods*; D005708:Gallium / Q000737:chemistry*; D008422:Materials Testing; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012666:Semiconductors; D012822:Silicon Dioxide / Q000737:chemistry*; D013499:Surface Properties
chemical_list: C473348:gallium nitride; D012822:Silicon Dioxide; D005708:Gallium