title: The periodicity effect on the charge storage characteristic of multistacked nc-Si floating gate.
abstract: Nanocrystalline (nc)-Si/SiO2 multistacked floating gate have been prepared by electron beam evaporation of SiO(x) and SiO2 followed by thermal annealing. HRXTEM reveals that the density of multiply stacked nc-Si quantum dots reaches 9.1 x 10(11) cm(-2) with size of 2-3 nm. The periodicity effect of nc-Si/SiO2 multilayers on the charge storage characteristics of nc-Si floating gate is investigated carefully by using capacitance-voltage (C-V) and conductance-voltage (G-V) measurements at room temperature. It is found the charge storage ability enhances obviously with the periodicity of the multiply stacked nc-Si layer increasing from 2 to 9. The up limit of the thickness for multistacked nc-Si/SiO2 layer is less than 100 nm, which is close to the mean free path of electron in multistacked nc-Si. Charge diffusion among the multistacked nc-Si quantum dots is used to explain the charge storage and retention characteristics.
authors: National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Photonic Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China.
authors: Zhongyuan
authors: Z
authors: Ma
authors: Guanyuan
authors: G
authors: Liu
authors: Xiaofan
authors: X
authors: Jiang
authors: Guoying
authors: G
authors: Xia
authors: Minyi
authors: M
authors: Yan
authors: Wei
authors: W
authors: Li
authors: Kunji
authors: K
authors: Chen
authors: Ling
authors: L
authors: Xu
authors: Jun
authors: J
authors: Xu
authors: Duan
authors: D
authors: Feng