title: Preparation of insulating SiO2 nanostructured thin films by the sol-gel process.
abstract: Organic dispersion agents can effectively decrease the surface roughness of films. Here, films containing organic dispersion agents are used to produce metal-insulator-metal structures. It was found that addition of Triton caused films to become denser, and thicker, and the leak current of devices to decrease by 10 times compared with that without Triton because of its uniform dispersion in the films. The resulting films were used as the insulator layer of thin film transistors containing a semiconductor layer of evaporated pentacene. The interface between the insulator and semiconductor layers was found to affect the arrangement of pentacene, and O2 plasma was used to improve the interface activity to increase the order of the pentacene molecules and enhance the carrier mobility of the devices.
authors: Department of Photonics, Institute of Electro-Optical Engineering, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, R.O.C.
authors: Tung-Li
authors: TL
authors: Hsieh
authors: Ann-Kuo
authors: AK
authors: Chu
authors: Wen-Yao
authors: WY
authors: Huang
mesh_terms: D003460:Crystallization / Q000379:methods*; D004579:Electron Transport; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008422:Materials Testing; D008567:Membranes, Artificial; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D044367:Phase Transition; D012822:Silicon Dioxide / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D008567:Membranes, Artificial; D012822:Silicon Dioxide