title: Morphological variations of Mn-doped ZnO dilute magnetic semiconductors thin films grown by succesive ionic layer by adsorption reaction method.
abstract: Transparent conducting Mn-doped ZnO thin films have been prepared by successive ionic layer by adsorption reaction (SILAR) method. The deposition conditions have been optimized based on their structure and on the formation of smoothness, adherence, and stoichiometry. The results of the studies by X-ray diffraction, scanning electron microscope (SEM), reveal the varieties of structural and morphological modifications feasible with SILAR method. The X-ray diffraction patterns confirm that the ZnO:Mn has wurtzite structure. The interesting morphological variations with dopant concentration are observed and discussed. The films' quality is comparable with those grown with physical methods and is suitable for spintronic applications.
authors: Department of Physics, Manonmaniam Sundaranar University, Tirunelveli 627 012, Tamil Nadu, India.
authors: Subramanian
authors: S
authors: Balamurali
authors: Rathinam
authors: R
authors: Chandramohan
authors: Marimuthu
authors: M
authors: Karunakaran
authors: Thayan
authors: T
authors: Mahalingam
authors: Padmanaban
authors: P
authors: Parameswaran
authors: Nagamani
authors: N
authors: Suryamurthy
authors: Arcod Anandhakrishnan
authors: AA
authors: Sukumar