title: Investigation on epitaxial lateral overgrowth of InGaN/GaN multi-quantum-well nanowires.
abstract: To achieve semipolar InGaN/GaN multi-quantum-well (MQW) structure, we fabricate InGaN/GaN MQW nanowires by using a combination of selectively epitaxial lateral overgrowth and patterned GaN/sapphire substrate techniques. Basing on the SEM observations, the nanowires along different crystal orientation of GaN substrate have various surface morphologies. Furthermore, cathodoluminescence measurements exhibit the dependence of the emission peaks of InGaN quantum wells on the axial direction of nanowires, being mainly attributed to the change of the morphology situation of the side facet. The shift of the peaks is larger than 30 nm as the axial direction of a nanowire varies between [1120] and [1100].
authors: School of Electronics Science and Engineering and Key Laboratory of Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China.
authors: Yao
authors: Y
authors: Yin
authors: Huabin
authors: H
authors: Sun
authors: Xi
authors: X
authors: Tang
authors: Ruihua
authors: R
authors: Cao
authors: Peng
authors: P
authors: Chen
authors: Yi
authors: Y
authors: Shi
authors: Rong
authors: R
authors: Zhang
authors: Youdou
authors: Y
authors: Zheng