title: ZnO/p-GaN heterostructure for solar cells and the effect of ZnGa2O4 interlayer on their performance.
abstract: We report the usage of ZnO material as an alternative for n-GaN for realizing III-nitride based solar cell. The fabricated solar cell shows large turn-on voltage of around 8 volts and a rapid decrease of photocurrent at low bias voltage under darkness and 1-sun illumination conditions, respectively. This phenomenon can be attributed to the formation of high-resistive ultra-thin layers at the ZnO/ p-GaN junction interface during high temperature deposition. Transmission electron microscopy (TEM) studies carried out on the grown samples reveals that the ultra-thin layer consists of ZnGa2O4. It is found that the presence of insulating ZnGa2O4 film is detrimental in the performance of proposed heterostructure for solar cells.
authors: School of Information and Commnications, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea.
authors: Seung Yong
authors: SY
authors: Nam
authors: Yong Seok
authors: YS
authors: Choi
authors: Ju Ho
authors: JH
authors: Lee
authors: Seong Ju
authors: SJ
authors: Park
authors: Jeong Yong
authors: JY
authors: Lee
authors: Dong Seon
authors: DS
authors: Lee
mesh_terms: D011211:Electric Power Supplies; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012993:Solar Energy; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: C473348:gallium nitride; C038863:gallium oxide; D005708:Gallium; D015034:Zinc Oxide