title: Growth of large-scale vertically aligned GaN nanowires and their heterostructures with high uniformity on SiO(x) by catalyst-free molecular beam epitaxy.
abstract: The catalyst-free molecular beam epitaxial growth of GaN nanowires and their heterostructures on a SiOx template is studied in detail. It was found that by optimizing the growth temperature, highly uniform and vertically aligned GaN nanowires and InGaN/GaN heterostructures with excellent optical properties can be obtained on a SiOx template in a large-scale. This work provides an entirely new avenue for GaN nanowire based optoelectronic devices.
authors: Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 2A7, Canada.
authors: S
authors: S
authors: Zhao
authors: M G
authors: MG
authors: Kibria
authors: Q
authors: Q
authors: Wang
authors: H P T
authors: HP
authors: Nguyen
authors: Z
authors: Z
authors: Mi
mesh_terms: D002384:Catalysis; D004581:Electronics; D005708:Gallium / Q000737:chemistry*; D053770:Nanowires / Q000737:chemistry*; D055620:Optical Phenomena; D012822:Silicon Dioxide / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D012822:Silicon Dioxide; D005708:Gallium