title: Optical assessment of silicon nanowire arrays fabricated by metal-assisted chemical etching.
abstract: Silicon nanowire (SiNW) arrays were prepared on silicon substrates by metal-assisted chemical etching and peeled from the substrates, and their optical properties were measured. The absorption coefficient of the SiNW arrays was higher than that for the bulk silicon over the entire region. The absorption coefficient of a SiNW array composed of 10-μm-long nanowires was much higher than the theoretical absorptance of a 10-μm-thick flat Si wafer, suggesting that SiNW arrays exhibit strong optical confinement. To reveal the reason for this strong optical confinement demonstrated by SiNW arrays, angular distribution functions of their transmittance were experimentally determined. The results suggest that Mie-related scattering plays a significant role in the strong optical confinement of SiNW arrays.
authors: Department of Physical Electronics, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan. kato.s.am@m.titech.ac.jp.
authors: Shinya
authors: S
authors: Kato
authors: Yasuyoshi
authors: Y
authors: Kurokawa
authors: Yuya
authors: Y
authors: Watanabe
authors: Yasuharu
authors: Y
authors: Yamada
authors: Akira
authors: A
authors: Yamada
authors: Yoshimi
authors: Y
authors: Ohta
authors: Yusuke
authors: Y
authors: Niwa
authors: Masaki
authors: M
authors: Hirota
references: Nano Lett. 2009 Apr;9(4):1549-54
references: 19281253
references: Nanotechnology. 2012 Aug 3;23(30):305305
references: 22781145
references: Nano Lett. 2005 Mar;5(3):457-60
references: 15755094
references: Opt Express. 2011 Feb 14;19(4):3316-31
references: 21369154
references: Nanotechnology. 2008 Jul 23;19(29):295203
references: 21730599
references: Opt Express. 2009 Oct 26;17(22):19371-81
references: 19997158
references: Opt Lett. 2010 Oct 15;35(20):3378-80
references: 20967072
references: Nano Lett. 2009 Jan;9(1):279-82
references: 19072061
references: Nano Lett. 2007 Nov;7(11):3249-52
references: 17927257