title: Developing high-transmittance heterojunction diodes based on NiO/TZO bilayer thin films.
abstract: In this study, radio frequency magnetron sputtering was used to deposit nickel oxide thin films (NiO, deposition power of 100 W) and titanium-doped zinc oxide thin films (TZO, varying deposition powers) on glass substrates to form p(NiO)-n(TZO) heterojunction diodes with high transmittance. The structural, optical, and electrical properties of the TZO and NiO thin films and NiO/TZO heterojunction devices were investigated with scanning electron microscopy, X-ray diffraction (XRD) patterns, UV-visible spectroscopy, Hall effect analysis, and current-voltage (I-V) analysis. XRD analysis showed that only the (111) diffraction peak of NiO and the (002) and (004) diffraction peaks of TZO were observable in the NiO/TZO heterojunction devices, indicating that the TZO thin films showed a good c-axis orientation perpendicular to the glass substrates. When the sputtering deposition power for the TZO thin films was 100, 125, and 150 W, the I-V characteristics confirmed that a p-n junction characteristic was successfully formed in the NiO/TZO heterojunction devices. We show that the NiO/TZO heterojunction diode was dominated by the space-charge limited current theory.
authors: Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung, 811, Taiwan. cfyang@nuk.edu.tw.
authors: Chia-Cheng
authors: CC
authors: Huang
authors: Fang-Hsing
authors: FH
authors: Wang
authors: Chia-Ching
authors: CC
authors: Wu
authors: Hong-Hsin
authors: HH
authors: Huang
authors: Cheng-Fu
authors: CF
authors: Yang