title: Wafer-scale production of uniform InAs(y)P(1-y) nanowire array on silicon for heterogeneous integration.
abstract: One-dimensional crystal growth allows the epitaxial integration of compound semiconductors on silicon (Si), as the large lattice-mismatch strain arising from heterointerfaces can be laterally relieved. Here, we report the direct heteroepitaxial growth of a mixed anion ternary InAsyP1-y nanowire array across an entire 2 in. Si wafer with unprecedented spatial, structural, and special uniformity across the entire 2 in. wafer and dramatic improvements in aspect ratio (>100) and area density (>5 × 10(8)/cm(2)). Heterojunction solar cells consisting of n-type InAsyP1-y (y = 0.75) and p-type Si achieve a conversion efficiency of 3.6% under air mass 1.5 illumination. This work demonstrates the potential for large-scale production of these nanowires for heterogeneous integration of optoelectronic devices.
authors: Korea Photonics Technology Institute, Gwangju 500-779, South Korea.
authors: Jae Cheol
authors: JC
authors: Shin
authors: Ari
authors: A
authors: Lee
authors: Parsian Katal
authors: PK
authors: Mohseni
authors: Do Yang
authors: DY
authors: Kim
authors: Lan
authors: L
authors: Yu
authors: Jae Hun
authors: JH
authors: Kim
authors: Hyo Jin
authors: HJ
authors: Kim
authors: Won Jun
authors: WJ
authors: Choi
authors: Daniel
authors: D
authors: Wasserman
authors: Kyoung Jin
authors: KJ
authors: Choi
authors: Xiuling
authors: X
authors: Li