title: Note: Generation of Raman laser beams based on a sideband injection-locking technique using a fiber electro-optical modulator.
abstract: Two phase-coherent Raman laser beams with a frequency offset of 6.835 GHz were generated by sideband injection-locking technique. A master diode laser was phase-modulated at 6.835 GHz by a fiber electro-optic modulator. A slave diode was injection-locked to the -1 sideband of the phase-modulated beam, and another diode was locked to the master laser carrier. This method produced stable and spatially separated Raman lasers with a large frequency shift range (>180 MHz). The relative linewidth of these two beams was ∼1 Hz, and the unwanted carrier mode was suppressed down to -24 dB. Stimulated Raman transitions and Ramsey fringes were driven by Raman lasers in a cold atomic beam.
authors: State Key Laboratory of Precision Measurement Technology and Instruments, Tsinghua University, Beijing 100084, China.
authors: H B
authors: HB
authors: Xue
authors: Y Y
authors: YY
authors: Feng
authors: X J
authors: XJ
authors: Wang
authors: S
authors: S
authors: Chen
authors: Z Y
authors: ZY
authors: Zhou