title: Tunable electrical memory characteristics using polyimide:polycyclic aromatic compound blends on flexible substrates.
abstract: Resistance switching memory devices with the configuration of poly(ethylene naphthalate)(PEN)/Al/polyimide (PI) blend/Al are reported. The active layers of the PI blend films were prepared from different compositions of poly[4,4'-diamino-4″-methyltriphenylamine-hexafluoroisopropylidenediphthalimide] (PI(AMTPA)) and polycyclic aromatic compounds (coronene or N,N-bis[4-(2-octyldodecyloxy)phenyl]-3,4,9,10-perylenetetracarboxylic diimide (PDI-DO)). The additives of large π-conjugated polycyclic compounds can stabilize the charge transfer complex induced by the applied electric field. Thus, the memory device characteristic changes from the volatile to nonvolatile behavior of flash and write-once-read-many times (WORM) as the additive contents increase in both blend systems. The main differences between these two blend systems are the threshold voltage values and the additive content to change the memory behavior. Due to the stronger accepting ability and higher electron affinity of PDI-DO than those of coronene, the PI(AMTPA):PDI-DO blend based memory devices show a smaller threshold voltage and change the memory behavior in a smaller additive content. Besides, the memory devices fabricated on a flexible PEN substrate exhibit an excellent durability upon the bending conditions. These tunable memory performances of the developed PI/polycyclic aromatic compound blends are advantageous for future advanced memory device applications.
authors: Department of Chemical Engineering, National Taiwan University, Taipei, 10617 Taiwan.
authors: An-Dih
authors: AD
authors: Yu
authors: Tadanori
authors: T
authors: Kurosawa
authors: Ying-Hsuan
authors: YH
authors: Chou
authors: Koutarou
authors: K
authors: Aoyagi
authors: Yu
authors: Y
authors: Shoji
authors: Tomoya
authors: T
authors: Higashihara
authors: Mitsuru
authors: M
authors: Ueda
authors: Cheng-Liang
authors: CL
authors: Liu
authors: Wen-Chang
authors: WC
authors: Chen