title: Improved growth behavior of atomic-layer-deposited high-k dielectrics on multilayer MoS2 by oxygen plasma pretreatment.
abstract: We report on the effect of oxygen plasma treatment of two-dimensional multilayer MoS2 crystals on the subsequent growth of Al2O3 and HfO2 films, which were formed by atomic layer deposition (ALD) using trimethylaluminum and tetrakis-(ethylmethylamino)hafnium metal precursors, respectively, with water oxidant. Due to the formation of an ultrathin Mo-oxide layer on the MoS2 surface, the surface coverage of Al2O3 and HfO2 films was significantly improved compared to those on pristine MoS2, even at a high ALD temperature. These results indicate that the surface modification of MoS2 by oxygen plasma treatment can have a major impact on the subsequent deposition of high-k thin films, with important implications on their integration in thin film transistors.
authors.affiliation: School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea.
authors.forename: Jaehyun
authors.initials: J
authors.lastname: Yang
authors.forename: Sunkook
authors.initials: S
authors.lastname: Kim
authors.forename: Woong
authors.initials: W
authors.lastname: Choi
authors.forename: Sang Han
authors.initials: SH
authors.lastname: Park
authors.forename: Youngkwon
authors.initials: Y
authors.lastname: Jung
authors.forename: Mann-Ho
authors.initials: MH
authors.lastname: Cho
authors.forename: Hyoungsub
authors.initials: H
authors.lastname: Kim