title: Enhancement of light output power of GaN-based light-emitting diodes with photonic quasi-crystal patterned on p-GaN surface and n-side sidewall roughing.
abstract: In this paper, GaN-based light-emitting diodes (LEDs) with photonic quasi-crystal (PQC) structure on p-GaN surface and n-side roughing by nano-imprint lithography are fabricated and investigated. At an injection current of 20 mA, the LED with PQC structure on p-GaN surface and n-side roughing increased the light output power of the InGaN/GaN multiple quantum well LEDs by a factor of 1.42, and the wall-plug efficiency is 26% higher than the conventional GaN-based LED type. After 500-h life test (55°C/50 mA), it was found that the normalized output power of GaN-based LED with PQC structure on p-GaN surface and n-side roughing only decreased by 6%. These results offer promising potential to enhance the light output powers of commercial light-emitting devices using the technique of nano-imprint lithography.
authors.affiliation: Department of Photonic Engineering, Yuan Ze University, 135 Yuan-Tung Rd, Jung-Li, Tao-Yuan country 32003, Taiwan. filai@saturn.yzu.edu.tw.
authors.forename: Fang-I
authors.initials: FI
authors.lastname: Lai
authors.forename: Jui-Fu
authors.initials: JF
authors.lastname: Yang