title: Quantum Hall effect in hydrogenated graphene.
abstract: The quantum Hall effect is observed in a two-dimensional electron gas formed in millimeter-scale hydrogenated graphene, with a mobility less than 10  cm2/V·s and corresponding Ioffe-Regel disorder parameter (k(F)λ)(-1) ≫ 1. In a zero magnetic field and low temperatures, the hydrogenated graphene is insulating with a two-point resistance of the order of 250h/e2. The application of a strong magnetic field generates a negative colossal magnetoresistance, with the two-point resistance saturating within 0.5% of h/2e2 at 45 T. Our observations are consistent with the opening of an impurity-induced gap in the density of states of graphene. The interplay between electron localization by defect scattering and magnetic confinement in two-dimensional atomic crystals is discussed.
authors.affiliation: Department of Physics, McGill University, Montréal, Quebec, H3A 2T8, Canada.
authors.forename: J
authors.initials: J
authors.lastname: Guillemette
authors.forename: S S
authors.initials: SS
authors.lastname: Sabri
authors.forename: Binxin
authors.initials: B
authors.lastname: Wu
authors.forename: K
authors.initials: K
authors.lastname: Bennaceur
authors.forename: P E
authors.initials: PE
authors.lastname: Gaskell
authors.forename: M
authors.initials: M
authors.lastname: Savard
authors.forename: P L
authors.initials: PL
authors.lastname: Lévesque
authors.forename: F
authors.initials: F
authors.lastname: Mahvash
authors.forename: A
authors.initials: A
authors.lastname: Guermoune
authors.forename: M
authors.initials: M
authors.lastname: Siaj
authors.forename: R
authors.initials: R
authors.lastname: Martel
authors.forename: T
authors.initials: T
authors.lastname: Szkopek
authors.forename: G
authors.initials: G
authors.lastname: Gervais