title: Enhanced performance of solution-processed organic thin-film transistors with a low-temperature-annealed alumina interlayer between the polyimide gate insulator and the semiconductor.
abstract: We studied a low-temperature-annealed sol-gel-derived alumina interlayer between the organic semiconductor and the organic gate insulator for high-performance organic thin-film transistors. The alumina interlayer was deposited on the polyimide gate insulator by a simple spin-coating and 200 °C-annealing process. The leakage current density decreased by the interlayer deposition: at 1 MV/cm, the leakage current densities of the polyimide and the alumina/polyimide gate insulators were 7.64 × 10(-7) and 3.01 × 10(-9) A/cm(2), respectively. For the first time, enhancement of the organic thin-film transistor performance by introduction of an inorganic interlayer between the organic semiconductor and the organic gate insulator was demonstrated: by introducing the interlayer, the field-effect mobility of the solution-processed organic thin-film transistor increased from 0.35 ± 0.15 to 1.35 ± 0.28 cm(2)/V·s. Our results suggest that inorganic interlayer deposition could be a simple and efficient surface treatment of organic gate insulators for enhancing the performance of solution-processed organic thin-film transistors.
authors.affiliation: Division of Advanced Materials, Korea Research Institute of Chemical Technology, Yuseong-gu, Daejeon 305-600, Republic of Korea.
authors.forename: Jun-Young
authors.initials: JY
authors.lastname: Yoon
authors.forename: Sunho
authors.initials: S
authors.lastname: Jeong
authors.forename: Sun Sook
authors.initials: SS
authors.lastname: Lee
authors.forename: Yun Ho
authors.initials: YH
authors.lastname: Kim
authors.forename: Jae-Won
authors.initials: JW
authors.lastname: Ka
authors.forename: Mi Hye
authors.initials: MH
authors.lastname: Yi
authors.forename: Kwang-Suk
authors.initials: KS
authors.lastname: Jang