title: Single cuprous oxide films synthesized by radical oxidation at low temperature for PV application.
abstract: Cuprous oxide (Cu(2)O) films synthesis by radical oxidation with nitrogen (N(2)) plasma treatment and different RF power at low temperature (500 °C) are studied in this paper. X-ray diffraction measurements show that synthesized Cu(2)O thin films grow on c-sapphire substrate with preferred (111) orientation. With nitrogen (N(2)) plasma treatment, the optical bandgap energy is increased from 1.69 to 2.42 eV, when N(2) plasma treatment time is increased from 0 min to 40 min. Although the hole density is increased from 10(14) to 10(15) cm(-3) and the resistivity is decreased from 1879 to 780 Ω cm after N(2) plasma treatment, the performance of Cu(2)O films is poorer compared to that of Cu(2)O using RF power of 0. The fabricated ZnO/Cu(2)O solar cells based on Cu(2)O films with RF power of 0 W show a good rectifying behavior with a efficiency of 0.02%, an open-circuit voltage of 0.1 V, and a fill factor of 24%.
authors.affiliation: Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8011, Japan. zang4211@gmail.com
authors.forename: Zhigang
authors.initials: Z
authors.lastname: Zang
authors.forename: Atsushi
authors.initials: A
authors.lastname: Nakamura
authors.forename: Jiro
authors.initials: J
authors.lastname: Temmyo
mesh_terms: D003300:Copper / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D005609:Free Radicals; D008422:Materials Testing; D008567:Membranes, Artificial; D053758:Nanoparticles / Q000737:chemistry*; D010084:Oxidation-Reduction; D012666:Semiconductors; D013696:Temperature
chemical_list: D005609:Free Radicals; D008567:Membranes, Artificial; D003300:Copper; C000520:cuprous oxide