title: FEM simulation of Rayleigh waves for CMOS compatible SAW devices based on AlN/SiO₂/Si(100).
abstract: A simulation study of Rayleigh wave devices based on a stacked AlN/SiO₂/Si(100) device was carried out. Dispersion curves with respect to acoustic phase velocity, reflectivity and electromechanical coupling efficiency for tungsten W and aluminium Al electrodes and different layer thicknesses were quantified by 2D FEM COMSOL simulations. Simulated acoustic mode shapes are presented. The impact of these parameters on the observed Rayleigh wave modes was discussed. High coupling factors of 2% and high velocities up to 5000 m/s were obtained by optimizing the AlN/SiO₂ thickness ratio.
authors.affiliation: IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany. Electronic address: kaletta@ihp-microelectronics.com.
authors.forename: Udo Christian
authors.initials: UC
authors.lastname: Kaletta
authors.forename: Christian
authors.initials: C
authors.lastname: Wenger
mesh_terms: D017607:Aluminum Compounds / Q000737:chemistry* / Q000528:radiation effects; D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D020342:Finite Element Analysis; D055617:Micro-Electrical-Mechanical Systems / Q000295:instrumentation*; D012542:Scattering, Radiation; D012822:Silicon Dioxide / Q000737:chemistry* / Q000528:radiation effects; D013016:Sound; D014159:Transducers; D014173:Transistors, Electronic
chemical_list: D017607:Aluminum Compounds; D012822:Silicon Dioxide; C052045:aluminum nitride
keywords: AlN; CMOS; FEM; Rayleigh; SAW