title: Vertical graphene-base hot-electron transistor.
abstract: We demonstrate vertical graphene-base hot-electron transistors (GB-HETs) with a variety of structures and material parameters. Our GB-HETs exhibit a current saturation with a high current on-off ratio (>10(5)), which results from both the vertical transport of hot electrons across the ultrathin graphene base and the filtering of hot electrons through a built-in energy barrier. The influences of the materials and their thicknesses used for the tunneling and filtering barriers on the common-base current gain α are studied. The optimization of the SiO2 thickness and using HfO2 as the filtering barrier significantly improves the common-base current gain α by more than 2 orders of magnitude. The results demonstrate that GB-HETs have a great potential for high-frequency, high-speed, and high-density integrated circuits.
authors.affiliation: Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.
authors.forename: Caifu
authors.initials: C
authors.lastname: Zeng
authors.forename: Emil B
authors.initials: EB
authors.lastname: Song
authors.forename: Minsheng
authors.initials: M
authors.lastname: Wang
authors.forename: Sejoon
authors.initials: S
authors.lastname: Lee
authors.forename: Carlos M
authors.initials: CM
authors.lastname: Torres
authors.forename: Jianshi
authors.initials: J
authors.lastname: Tang
authors.forename: Bruce H
authors.initials: BH
authors.lastname: Weiller
authors.forename: Kang L
authors.initials: KL
authors.lastname: Wang