title: Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2.
abstract: We demonstrate the continuous tuning of the electronic structure of atomically thin MoS2 on flexible substrates by applying a uniaxial tensile strain. A redshift at a rate of ~70 meV per percent applied strain for direct gap transitions, and at a rate 1.6 times larger for indirect gap transitions, has been determined by absorption and photoluminescence spectroscopy. Our result, in excellent agreement with first principles calculations, demonstrates the potential of two-dimensional crystals for applications in flexible electronics and optoelectronics.
authors.affiliation: Department of Physics, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, Ohio 44106, USA.
authors.forename: Keliang
authors.initials: K
authors.lastname: He
authors.forename: Charles
authors.initials: C
authors.lastname: Poole
authors.forename: Kin Fai
authors.initials: KF
authors.lastname: Mak
authors.forename: Jie
authors.initials: J
authors.lastname: Shan