title: Electrically controlled Goos-Hänchen shift of a light beam reflected from the metal-insulator-semiconductor structure.
abstract: We proposed a scheme to manipulate the Goos-Hänchen shift of a light beam reflected from the depletion-type device via external voltage bias. It is shown that the lateral shift of the reflected probe beam can be easily controlled by adjusting the reverse voltage bias and the incidence angle. Using this scheme, the lateral shift can be tuned from negative to positive, without changing the original structure of the depletion-type device. Numerical calculations further indicate that the influence of structure parameters and light wavelength can be reduced via readjustment of the reverse bias. The proposed structure has the potential application for the integrated electronic devices.
authors.affiliation: Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education, College of Physics and Microelectronic Science, Hunan University, Changsha 410082, China.
authors.forename: Changyou
authors.initials: C
authors.lastname: Luo
authors.forename: Jun
authors.initials: J
authors.lastname: Guo
authors.forename: Qingkai
authors.initials: Q
authors.lastname: Wang
authors.forename: Yuanjiang
authors.initials: Y
authors.lastname: Xiang
authors.forename: Shuangchun
authors.initials: S
authors.lastname: Wen
mesh_terms: D003198:Computer Simulation; D017076:Computer-Aided Design; D004553:Electric Conductivity; D004574:Electromagnetic Fields; D004581:Electronics / Q000295:instrumentation*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007909:Lenses; D008670:Metals / Q000737:chemistry*; D008962:Models, Theoretical; D012031:Refractometry / Q000295:instrumentation*; D012666:Semiconductors; D020349:Surface Plasmon Resonance / Q000295:instrumentation*
chemical_list: D008670:Metals