title: Record mobility in transparent p-type tin monoxide films and devices by phase engineering.
abstract: Here, we report the fabrication of nanoscale (15 nm) fully transparent p-type SnO thin film transistors (TFT) at temperatures as low as 180 °C with record device performance. Specifically, by carefully controlling the process conditions, we have developed SnO thin films with a Hall mobility of 18.71 cm(2) V(-1) s(-1) and fabricated TFT devices with a linear field-effect mobility of 6.75 cm(2) V(-1) s(-1) and 5.87 cm(2) V(-1) s(-1) on transparent rigid and translucent flexible substrates, respectively. These values of mobility are the highest reported to date for any p-type oxide processed at this low temperature. We further demonstrate that this high mobility is realized by careful phase engineering. Specifically, we show that phase-pure SnO is not necessarily the highest mobility phase; instead, well-controlled amounts of residual metallic tin are shown to substantially increase the hole mobility. A detailed phase stability map for physical vapor deposition of nanoscale SnO is constructed for the first time for this p-type oxide.
authors.affiliation: Materials Science and Engineering, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
authors.forename: Jesus A
authors.initials: JA
authors.lastname: Caraveo-Frescas
authors.forename: Pradipta K
authors.initials: PK
authors.lastname: Nayak
authors.forename: Hala A
authors.initials: HA
authors.lastname: Al-Jawhari
authors.forename: Danilo B
authors.initials: DB
authors.lastname: Granato
authors.forename: Udo
authors.initials: U
authors.lastname: Schwingenschlögl
authors.forename: Husam N
authors.initials: HN
authors.lastname: Alshareef