title: Influence of gallium-doped zinc-oxide thickness on polymer light-emitting diode luminescence efficiency.
abstract: Conducting atomic force microscopy and scanning surface potential microscopy were used to study the local electrical properties of gallium-doped zinc oxide (GZO) films prepared by pulsed laser deposition (PLD) on a polyimide (PI) substrate. For a PLD deposition process time of 8 min, the root-mean-square roughness, coverage percentage of the conducting regions, and mean work function on the GZO surface were 2.33 nm, 96.6%, and 4.82 eV, respectively. When the GZO/PI substrate was used for a polymer light-emitting diode (PLED), the electroluminescence intensity increased by nearly 20% compared to a standard PLED, which was based on a commercial-ITO/glass substrate.
authors.affiliation: Department of Electrophysics, National Chiayi University, Chiayi, Taiwan. shchen@mail.ncyu.edu.tw
authors.forename: Sy-Hann
authors.initials: SH
authors.lastname: Chen
authors.forename: Wei-Chun
authors.initials: WC
authors.lastname: Chen
authors.forename: Chang-Feng
authors.initials: CF
authors.lastname: Yu
authors.forename: Chia-Feng
authors.initials: CF
authors.lastname: Lin
authors.forename: Po-Ching
authors.initials: PC
authors.lastname: Kao
keywords: conducting atomic force microscopy; gallium-doped zinc oxide; polymer light-emitting diode; pulsed laser deposition; scanning surface potential microscopy