title: Image sensor pixel with on-chip high extinction ratio polarizer based on 65-nm standard CMOS technology.
abstract: In this study, we demonstrate a polarization sensitive pixel for a complementary metal-oxide-semiconductor (CMOS) image sensor based on 65-nm standard CMOS technology. Using such a deep-submicron CMOS technology, it is possible to design fine metal patterns smaller than the wavelengths of visible light by using a metal wire layer. We designed and fabricated a metal wire grid polarizer on a 20 × 20 μm(2) pixel for image sensor. An extinction ratio of 19.7 dB was observed at a wavelength 750 nm.
authors.affiliation: Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan.
authors.forename: Kiyotaka
authors.initials: K
authors.lastname: Sasagawa
authors.forename: Sanshiro
authors.initials: S
authors.lastname: Shishido
authors.forename: Keisuke
authors.initials: K
authors.lastname: Ando
authors.forename: Hitoshi
authors.initials: H
authors.lastname: Matsuoka
authors.forename: Toshihiko
authors.initials: T
authors.lastname: Noda
authors.forename: Takashi
authors.initials: T
authors.lastname: Tokuda
authors.forename: Kiyomi
authors.initials: K
authors.lastname: Kakiuchi
authors.forename: Jun
authors.initials: J
authors.lastname: Ohta
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D007089:Image Enhancement / Q000295:instrumentation*; D010781:Photography / Q000295:instrumentation*; D012031:Refractometry / Q000295:instrumentation*; D012666:Semiconductors; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D014159:Transducers