title: Direct laser writing of three-dimensional narrow bandgap and high refractive-index PbSe structures in a solution.
abstract: Three-dimensional (3D) micro/nano structures made of narrow electronic bandgap semiconductor materials have important applications in a wide range of disciplines. Direct laser writing (DLW) provides the unparalleled advantage to fabricate 3D arbitrary geometric structures at the micro and nano meter scale. The fabrication of 3D structures within bulk narrow electronic bandgap semiconductor materials by DLW is challenged for the top-down strategy due to their narrow bandgap and high refractive index. Here, we report on the bottom-up strategy for the fabrication of 3D micro/nano structures made from PbSe with an electronic bandgap as narrow as 0.27 eV and a refractive index as high as 4.82 in a solution.
authors.affiliation: Centre for Micro-Photonics Swinburne University of Technology, PO Box 218 Hawthorn, VIC 3122, Australia.
authors.forename: Zongsong
authors.initials: Z
authors.lastname: Gan
authors.forename: Yaoyu
authors.initials: Y
authors.lastname: Cao
authors.forename: Min
authors.initials: M
authors.lastname: Gu
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D007834:Lasers; D007854:Lead / Q000737:chemistry* / Q000528:radiation effects*; D054802:Molecular Imprinting / Q000379:methods*; D049329:Nanostructures / Q000737:chemistry*; D012031:Refractometry / Q000295:instrumentation*; D018036:Selenium Compounds / Q000737:chemistry* / Q000528:radiation effects*; D012666:Semiconductors; D012996:Solutions
chemical_list: D018036:Selenium Compounds; D012996:Solutions; C088065:lead selenide; D007854:Lead