title: Repeated and controlled growth of monolayer, bilayer and few-layer hexagonal boron nitride on Pt foils.
abstract: Atomically thin hexagonal boron nitride (h-BN), as a graphene analogue, has attracted increasing interest because of many fascinating properties and a wide range of potential applications. However, it still remains a great challenge to synthesize high-quality h-BN with predetermined number of layers at a low cost. Here we reported the controlled growth of h-BN on polycrystalline Pt foils by low-cost ambient pressure chemical vapor deposition with ammonia borane as the precursor. Monolayer, bilayer and few-layer h-BN domains and large-area films were selectively obtained on Pt by simply changing the concentration of ammonia borane. Moreover, using a bubbling method, we have achieved the nondestructive transfer of h-BN from Pt to arbitrary substrates and the repeated use of the Pt for h-BN growth, which not only reduces environmental pollution but also decreases the production cost of h-BN. The monolayer and bilayer h-BN obtained are very uniform with high quality and smooth surfaces. In addition, we found that the optical band gap of h-BN increases with decreasing number of layers. The repeated growth of large-area, high-quality monolayer and bilayer h-BN films, together with the successful growth of graphene, opens up the possibility for creating various functional heterostructures for large-scale fabrication and integration of novel electronics.
authors.affiliation: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, People's Republic of China.
authors.forename: Yang
authors.initials: Y
authors.lastname: Gao
authors.forename: Wencai
authors.initials: W
authors.lastname: Ren
authors.forename: Teng
authors.initials: T
authors.lastname: Ma
authors.forename: Zhibo
authors.initials: Z
authors.lastname: Liu
authors.forename: Yu
authors.initials: Y
authors.lastname: Zhang
authors.forename: Wen-Bin
authors.initials: WB
authors.lastname: Liu
authors.forename: Lai-Peng
authors.initials: LP
authors.lastname: Ma
authors.forename: Xiuliang
authors.initials: X
authors.lastname: Ma
authors.forename: Hui-Ming
authors.initials: HM
authors.lastname: Cheng