title: Mlines characterization of the refractive index profile of SiGe gradient waveguides at 2.15 µm.
abstract: SiGe alloys present a large Infra-Red transparency window and a full compatibility with the standard Complementary Metal Oxide Semiconductor processing making them suitable for applications in integrated optics. In this paper we report on Mlines characterization of Si(1-x)Ge(x) graded index waveguides at 2.15 µm. First, a law giving the refractive index of a Si(1-x)Ge(x) alloy as a function of the Ge content x: n = 1.342x(2) + 0.295x + 3.451, has been experimentally established in the 0 < x < 0.4 range. Then, we have demonstrated that our methodology based on Mlines measurements can be used as short-loop non-destructive technique to provide feedback for sample growth.
authors.affiliation: CEA-LETI, MINATEC Campus, 17 Rue des Martyrs - 38054 GRENOBLE Cedex 9, France. Pierre.barritault@cea.fr
authors.forename: Pierre
authors.initials: P
authors.lastname: Barritault
authors.forename: Mickael
authors.initials: M
authors.lastname: Brun
authors.forename: Pierre
authors.initials: P
authors.lastname: Labeye
authors.forename: Olivier
authors.initials: O
authors.lastname: Lartigue
authors.forename: Jean-Michel
authors.initials: JM
authors.lastname: Hartmann
authors.forename: Sergio
authors.initials: S
authors.lastname: Nicoletti
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D005857:Germanium / Q000737:chemistry*; D012031:Refractometry / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry*; D020349:Surface Plasmon Resonance / Q000295:instrumentation*
chemical_list: D005857:Germanium; D012825:Silicon