title: Ambient-processable high capacitance hafnia-organic self-assembled nanodielectrics.
abstract: Ambient and solution-processable, low-leakage, high capacitance gate dielectrics are of great interest for advances in low-cost, flexible, thin-film transistor circuitry. Here we report a new hafnium oxide-organic self-assembled nanodielectric (Hf-SAND) material consisting of regular, alternating π-electron layers of 4-[[4-[bis(2-hydroxyethyl)amino]phenyl]diazenyl]-1-[4-(diethoxyphosphoryl) benzyl]pyridinium bromide) (PAE) and HfO2 nanolayers. These Hf-SAND multilayers are grown from solution in ambient with processing temperatures ≤150 °C and are characterized by AFM, XPS, X-ray reflectivity (2.3 nm repeat spacing), X-ray fluorescence, cross-sectional TEM, and capacitance measurements. The latter yield the largest capacitance to date (1.1 μF/cm(2)) for a solid-state solution-processed hybrid inorganic-organic gate dielectric, with effective oxide thickness values as low as 3.1 nm and have gate leakage <10(-7) A/cm(2) at ±2 MV/cm using photolithographically patterned contacts (0.04 mm(2)). The sizable Hf-SAND capacitances are attributed to relatively large PAE coverages on the HfO2 layers, confirmed by X-ray reflectivity and X-ray fluorescence. Random network semiconductor-enriched single-walled carbon nanotube transistors were used to test Hf-SAND utility in electronics and afforded record on-state transconductances (5.5 mS) at large on:off current ratios (I(ON):I(OFF)) of ~10(5) with steep 150 mV/dec subthreshold swings and intrinsic field-effect mobilities up to 137 cm(2)/(V s). Large-area devices (>0.2 mm(2)) on Hf-SAND (6.5 nm thick) achieve mA on currents at ultralow gate voltages (<1 V) with low gate leakage (<2 nA), highlighting the defect-free and conformal nature of this nanodielectric. High-temperature annealing in ambient (400 °C) has limited impact on Hf-SAND leakage densities (<10(-6) A/cm(2) at ±2 V) and enhances Hf-SAND multilayer capacitance densities to nearly 1 μF/cm(2), demonstrating excellent compatibility with device postprocessing methodologies. These results represent a significant advance in hybrid organic-inorganic dielectric materials and suggest synthetic routes to even higher capacitance materials useful for unconventional electronics.
authors.affiliation: Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA.
authors.forename: Ken
authors.initials: K
authors.lastname: Everaerts
authors.forename: Jonathan D
authors.initials: JD
authors.lastname: Emery
authors.forename: Deep
authors.initials: D
authors.lastname: Jariwala
authors.forename: Hunter J
authors.initials: HJ
authors.lastname: Karmel
authors.forename: Vinod K
authors.initials: VK
authors.lastname: Sangwan
authors.forename: Pradyumna L
authors.initials: PL
authors.lastname: Prabhumirashi
authors.forename: Michael L
authors.initials: ML
authors.lastname: Geier
authors.forename: Julian J
authors.initials: JJ
authors.lastname: McMorrow
authors.forename: Michael J
authors.initials: MJ
authors.lastname: Bedzyk
authors.forename: Antonio
authors.initials: A
authors.lastname: Facchetti
authors.forename: Mark C
authors.initials: MC
authors.lastname: Hersam
authors.forename: Tobin J
authors.initials: TJ
authors.lastname: Marks
mesh_terms: D025802:Electric Capacitance; D004583:Electrons; D004867:Equipment Design; D006195:Hafnium / Q000737:chemistry*; D010087:Oxides / Q000737:chemistry*; D011726:Pyridinium Compounds / Q000737:chemistry*; D012666:Semiconductors
chemical_list: D010087:Oxides; D011726:Pyridinium Compounds; C545179:hafnium oxide; D006195:Hafnium