title: Fabrication of ultrahigh density metal-cell-metal crossbar memory devices with only two cycles of lithography and dry-etch procedures.
abstract: A novel approach to the fabrication of metal-cell-metal trilayer memory devices was demonstrated by using only two cycles of lithography and dry-etch procedures. The fabricated ultrahigh density crossbar devices can be scaled down to ≤70 nm in half-pitch without alignment issues. Depending on the different dry-etch mechanisms in transferring high and low density nanopatterns, suitable dry-etch angles and methods are studied for the transfer of high density nanopatterns. Some novel process methods have also been developed to eliminate the sidewall and other conversion obstacles for obtaining high density of uniform metallic nanopatterns. With these methods, ultrahigh density trilayer crossbar devices (~2 × 10(10) bit cm(-2)-kilobit electronic memory), which are composed of built-in practical magnetoresistive nanocells, have been achieved. This scalable process that we have developed provides the relevant industries with a cheap means to commercially fabricate three-dimensional high density metal-cell-metal nanodevices.
authors.affiliation: Temasek Laboratories, National University of Singapore, Singapore. baoyuzong@hotmail.com
authors.forename: B Y
authors.initials: BY
authors.lastname: Zong
authors.forename: J Y
authors.initials: JY
authors.lastname: Goh
authors.forename: Z B
authors.initials: ZB
authors.lastname: Guo
authors.forename: P
authors.initials: P
authors.lastname: Luo
authors.forename: C C
authors.initials: CC
authors.lastname: Wang
authors.forename: J J
authors.initials: JJ
authors.lastname: Qiu
authors.forename: P
authors.initials: P
authors.lastname: Ho
authors.forename: Y J
authors.initials: YJ
authors.lastname: Chen
authors.forename: M S
authors.initials: MS
authors.lastname: Zhang
authors.forename: G C
authors.initials: GC
authors.lastname: Han