title: Electrically pumped random lasing from FTO/porous insulator/n-ZnO/p(+)-Si devices.
abstract: Electrically pumped random lasing (RL) has been realized in FTO/porous insulator/n-ZnO/p(+)-Si devices. It is demonstrated that RL originates from the confining and recurrent scattering of light in the random cavities within the insulating layer, which are formed due to the glow discharge. The glow discharge also induces the observed negative differential resistance (NDR) effect following the normal I-V characteristics. The results present a new strategy to realize electrically pumped RL in ZnO-based metal-insulator-semiconductor device by simply modifying the morphology of the insulating layer.
authors.affiliation: Department of Physics & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.
authors.forename: Yanjun
authors.initials: Y
authors.lastname: Fang
authors.forename: Yewu
authors.initials: Y
authors.lastname: Wang
authors.forename: Xi
authors.initials: X
authors.lastname: Ding
authors.forename: Ren
authors.initials: R
authors.lastname: Lu
authors.forename: Lin
authors.initials: L
authors.lastname: Gu
authors.forename: Jian
authors.initials: J
authors.lastname: Sha
mesh_terms: D004553:Electric Conductivity; D004574:Electromagnetic Fields; D004867:Equipment Design; D019544:Equipment Failure Analysis; D053844:Lasers, Solid-State; D016062:Porosity / Q000528:radiation effects; D012825:Silicon / Q000737:chemistry* / Q000528:radiation effects; D015034:Zinc Oxide / Q000737:chemistry* / Q000528:radiation effects
chemical_list: D015034:Zinc Oxide; D012825:Silicon