title: Temperature-independent transport in high-mobility dinaphtho-thieno-thiophene (DNTT) single crystal transistors.
abstract: The angular and temperature dependence of the field-effect mobility are investigated for p-type DNTT single crystals in a vacuum-gap structure. Temperature-independent transport behavior and weak mobility anisotropy are observed, with the best mobility approaching 10 cm(2) V(-1) s(-1) . Structural characterization and simulation suggest exceptionally high-quality and high-purity crystals.
authors.affiliation: Department of Chemical Engineering and Materials Science, 421 Washington Ave SE, Minneapolis, MN 55455, USA.
authors.forename: Wei
authors.initials: W
authors.lastname: Xie
authors.forename: Kristin
authors.initials: K
authors.lastname: Willa
authors.forename: Yanfei
authors.initials: Y
authors.lastname: Wu
authors.forename: Roger
authors.initials: R
authors.lastname: Häusermann
authors.forename: Kazuo
authors.initials: K
authors.lastname: Takimiya
authors.forename: Bertram
authors.initials: B
authors.lastname: Batlogg
authors.forename: C Daniel
authors.initials: CD
authors.lastname: Frisbie
keywords: DNTT single crystals; temperature independent transport; trap density of states; weak mobility anisotropy