title: Radiation sensors based on the generation of mobile protons in organic dielectrics.
abstract: A sensing scheme based on mobile protons generated by radiation, including ionizing radiation (IonR), in organic gate dielectrics is investigated for the development of metal-insulator-semiconductor (MIS)-type dosimeters. Application of an electric field to the gate dielectric moves the protons and thereby alters the flat band voltage (VFB) of the MIS device. The shift in the VFB is proportional to the IonR-generated protons and, therefore, to the IonR total dose. Triphenylsulfonium nonaflate (TPSNF) photoacid generator (PAG)-containing poly(methyl methacrylate) (PMMA) polymeric films was selected as radiation-sensitive gate dielectrics. The effects of UV (249 nm) and gamma (Co-60) irradiations on the high-frequency capacitance versus the gate voltage (C-VG) curves of the MIS devices were investigated for different total dose values. Systematic improvements in sensitivity can be accomplished by increasing the concentration of the TPSNF molecules embedded in the polymeric matrix.
authors.affiliation: Department of Electronics, Technological Educational Institute of Crete, 73133 Chania, Greece. ekapetan@chania.teicrete.gr
authors.forename: Eleftherios
authors.initials: E
authors.lastname: Kapetanakis
authors.forename: Antonios M
authors.initials: AM
authors.lastname: Douvas
authors.forename: Panagiotis
authors.initials: P
authors.lastname: Argitis
authors.forename: Pascal
authors.initials: P
authors.lastname: Normand
mesh_terms: D055664:Electrochemical Techniques / Q000295:instrumentation*; D004867:Equipment Design; D005720:Gamma Rays; D011522:Protons; D011874:Radiometry / Q000295:instrumentation* / Q000379:methods; D012666:Semiconductors; D013056:Spectrophotometry, Ultraviolet; D014466:Ultraviolet Rays
chemical_list: D011522:Protons