title: Nitrogen-doped graphene nanoplatelets from simple solution edge-functionalization for n-type field-effect transistors.
abstract: The development of a versatile method for nitrogen-doping of graphitic structure is an important challenge for many applications, such as energy conversions and storages and electronic devices. Here, we report a simple but efficient method for preparing nitrogen-doped graphene nanoplatelets via wet-chemical reactions. The reaction between monoketone (C═O) in graphene oxide (GO) and monoamine-containing compound produces imine (Shiff base) functionalized GO (iGO). The reaction between α-diketone in GO and 1,2-diamine (ortho-diamine)-containing compound gives stable pyrazine ring functionalized GO (pGO). Subsequent heat-treatments of iGO and pGO result in high-quality, nitrogen-doped graphene nanoplatelets to be designated as hiGO and hpGO, respectively. Of particular interest, hpGO was found to display the n-type field-effect transistor behavior with a charge neutral point (Dirac point) located at around -16 V. Furthermore, hpGO showed hole and electron mobilities as high as 11.5 and 12.4 cm(2)V(-1)s(-1), respectively.
authors.affiliation: Department of Chemical Systematic Engineering, Catholic University of Daegu, 100, Hayang, 712-702, South Korea.
authors.forename: Dong Wook
authors.initials: DW
authors.lastname: Chang
authors.forename: Eun Kwang
authors.initials: EK
authors.lastname: Lee
authors.forename: Eun Yeob
authors.initials: EY
authors.lastname: Park
authors.forename: Hojeong
authors.initials: H
authors.lastname: Yu
authors.forename: Hyun-Jung
authors.initials: HJ
authors.lastname: Choi
authors.forename: In-Yup
authors.initials: IY
authors.lastname: Jeon
authors.forename: Gyung-Joo
authors.initials: GJ
authors.lastname: Sohn
authors.forename: Dongbin
authors.initials: D
authors.lastname: Shin
authors.forename: Noejung
authors.initials: N
authors.lastname: Park
authors.forename: Joon Hak
authors.initials: JH
authors.lastname: Oh
authors.forename: Liming
authors.initials: L
authors.lastname: Dai
authors.forename: Jong-Beom
authors.initials: JB
authors.lastname: Baek