title: Growth and large-scale assembly of InAs/InP core/shell nanowire: effect of shell thickness on electrical characteristics.
abstract: InAs/InP core/shell nanowires with different shell thicknesses were grown by a two-step method, and large-scale assembly of single nanowire was realized by using dielectrophoresis alignment and patterned grooves. Thousands of single nanowire field-effect transistors were fabricated on a single chip. The effect of InP shell thickness on the electron mobility and density of InAs nanowires are experimentally investigated and discussed.
authors.affiliation: Department of Electronic Science and Technology, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian 116024, People's Republic of China.
authors.forename: Xueyu
authors.initials: X
authors.lastname: Liu
authors.forename: Pengbo
authors.initials: P
authors.lastname: Liu
authors.forename: Hui
authors.initials: H
authors.lastname: Huang
authors.forename: Changxin
authors.initials: C
authors.lastname: Chen
authors.forename: Tiening
authors.initials: T
authors.lastname: Jin
authors.forename: Yafei
authors.initials: Y
authors.lastname: Zhang
authors.forename: Xianliang
authors.initials: X
authors.lastname: Huang
authors.forename: Zhiyuan
authors.initials: Z
authors.lastname: Jin
authors.forename: Xiaogan
authors.initials: X
authors.lastname: Li
authors.forename: Zhenan
authors.initials: Z
authors.lastname: Tang