title: Four-states multiferroic memory embodied using Mn-doped BaTiO3 nanorods.
abstract: Multiferroics that show simultaneous ferroic responses have received a great deal of attention by virtue of their potential for enabling new device paradigms. Here, we demonstrate a high-density four-states multiferroic memory using vertically aligned Mn-doped BaTiO3 nanorods prepared by applying the dip-pen nanolithography technique. In the present nanorods array, the polarization (P) switching by an external electric field does not influence the magnetization (M) of the nanorod owing to a negligible degree of the P-M cross-coupling. Similarly, the magnetic-field-induced M switching is unaffected by the ferroelectric polarization. On the basis of these, we are able to implement a four-states nonvolatile multiferroic memory, namely, (+P,+M), (+P,-M) ,(-P,+M), and (-P,-M) with the reliability in the P and M switching. Thus, the present work makes an important step toward the practical realization of multistate ferroic memories.
authors.affiliation: Department of Applied Physics, College of Applied Science, Kyung Hee University, Suwon 446-701, Republic of Korea.
authors.forename: Jong Yeog
authors.initials: JY
authors.lastname: Son
authors.forename: Jung-Hoon
authors.initials: JH
authors.lastname: Lee
authors.forename: Seungwoo
authors.initials: S
authors.lastname: Song
authors.forename: Young-Han
authors.initials: YH
authors.lastname: Shin
authors.forename: Hyun Myung
authors.initials: HM
authors.lastname: Jang