title: Surface modification of a polyimide gate insulator with an yttrium oxide interlayer for aqueous-solution-processed ZnO thin-film transistors.
abstract: We report a simple approach to modify the surface of a polyimide gate insulator with an yttrium oxide interlayer for aqueous-solution-processed ZnO thin-film transistors. It is expected that the yttrium oxide interlayer will provide a surface that is more chemically compatible with the ZnO semiconductor than is bare polyimde. The field-effect mobility and the on/off current ratio of the ZnO TFT with the YOx/polyimide gate insulator were 0.456 cm(2)/V·s and 2.12 × 10(6), respectively, whereas the ZnO TFT with the polyimide gate insulator was inactive.
authors.affiliation: Division of Advanced Materials, Korea Research Institute of Chemical Technology, Daejeon 305-600, Republic of Korea. kjang@krict.re.kr
authors.forename: Kwang-Suk
authors.initials: KS
authors.lastname: Jang
authors.forename: Duyoung
authors.initials: D
authors.lastname: Wee
authors.forename: Yun Ho
authors.initials: YH
authors.lastname: Kim
authors.forename: Jinsoo
authors.initials: J
authors.lastname: Kim
authors.forename: Taek
authors.initials: T
authors.lastname: Ahn
authors.forename: Jae-Won
authors.initials: JW
authors.lastname: Ka
authors.forename: Mi Hye
authors.initials: MH
authors.lastname: Yi
mesh_terms: D010316:Particle Size; D012117:Resins, Synthetic / Q000737:chemistry*; D012996:Solutions; D013499:Surface Properties; D014173:Transistors, Electronic; D014867:Water / Q000737:chemistry; D015019:Yttrium / Q000737:chemistry*; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D012117:Resins, Synthetic; D012996:Solutions; D014867:Water; C029945:polyimide resin; D015019:Yttrium; D015034:Zinc Oxide; C091417:yttria