title: High-throughput screening of Si-Ni flux for SiC solution growth using a high-temperature laser microscope observation and secondary ion mass spectroscopy depth profiling.
abstract: Screening of Si-based flux materials for solution growth of SiC single crystals was demonstrated using a thin film composition-spread technique. The reactivity and diffusion of carbon in a composition spread of the flux was investigated by secondary ion mass spectroscopy depth profiling of the annealed flux thin film spread on a graphite substrate. The composition dependence of the chemical interaction between a seed crystal and flux materials was revealed by high-temperature thermal behavior observation of the flux and the subsequent morphological study of the surface after removing the flux using atomic force microscopy. Our new screening approach is shown to be an efficient process for understanding flux materials for SiC solution growth.
authors.affiliation: Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama-shi, Kanagawa 226-8503, Japan.
authors.forename: Shingo
authors.initials: S
authors.lastname: Maruyama
authors.forename: Aomi
authors.initials: A
authors.lastname: Onuma
authors.forename: Kazuhisa
authors.initials: K
authors.lastname: Kurashige
authors.forename: Tomohisa
authors.initials: T
authors.lastname: Kato
authors.forename: Hajime
authors.initials: H
authors.lastname: Okumura
authors.forename: Yuji
authors.initials: Y
authors.lastname: Matsumoto
mesh_terms: D017554:Carbon Compounds, Inorganic / Q000737:chemistry*; D003460:Crystallization; D004867:Equipment Design; D057166:High-Throughput Screening Assays / Q000295:instrumentation / Q000379:methods*; D006358:Hot Temperature; D008422:Materials Testing; D018613:Microscopy, Confocal; D009532:Nickel / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry*; D017655:Silicon Compounds / Q000737:chemistry*; D018629:Spectrometry, Mass, Secondary Ion; D013499:Surface Properties
chemical_list: D017554:Carbon Compounds, Inorganic; D017655:Silicon Compounds; D009532:Nickel; C022088:silicon carbide; D012825:Silicon