title: Manipulated transformation of filamentary and homogeneous resistive switching on ZnO thin film memristor with controllable multistate.
abstract: A bias polarity-manipulated transformation from filamentary to homogeneous resistive switching was demonstrated on a Pt/ZnO thin film/Pt device. Two types of switching behaviors, exhibiting different resistive switching characteristics and memory performances were investigated in detail. The detailed transformation mechanisms are systematically proposed. By controlling different compliance currents and RESET-stop voltages, controllable multistate resistances in low resistance states and a high resistance states in the ZnO thin film metal-insulator-metal structure under the homogeneous resistive switching were demonstrated. We believe that findings would open up opportunities to explore the resistive switching mechanisms and performance memristor with multistate storage.
authors.affiliation: Department of Materials Science and Engineering, Center For Nanotechnology, Material Science, and Microsystem, National Tsing Hua University, Hsinchu, Taiwan, Republic of China.
authors.forename: Chi-Hsin
authors.initials: CH
authors.lastname: Huang
authors.forename: Jian-Shiou
authors.initials: JS
authors.lastname: Huang
authors.forename: Chih-Chung
authors.initials: CC
authors.lastname: Lai
authors.forename: Hsin-Wei
authors.initials: HW
authors.lastname: Huang
authors.forename: Su-Jien
authors.initials: SJ
authors.lastname: Lin
authors.forename: Yu-Lun
authors.initials: YL
authors.lastname: Chueh