title: E(1)(A) electronic band gap in wurtzite InAs nanowires studied by resonant Raman scattering.
abstract: We report on resonant Raman experiments carried out on wurtzite InAs nanowires. Resonant conditions have been obtained by tuning either the excitation energy or the band gap through external high pressure at fixed excitation energy. A complete azimuthal study of the Raman spectra with two laser excitation lines (2.41 and 1.92 eV) has also been performed on a single wire. The measured E2(H) mode resonance indicates that the E1(A) gap is about 2.4 eV, which is considerably reduced with respect to the zinc-blende InAs E1 gap. These findings confirm recent theoretical calculations of crystal phase induced bandstructure modifications.
authors.affiliation: Walter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, D-85748 Garching, Germany.
authors.forename: Ilaria
authors.initials: I
authors.lastname: Zardo
authors.forename: Sara
authors.initials: S
authors.lastname: Yazji
authors.forename: Nicolas
authors.initials: N
authors.lastname: Hörmann
authors.forename: Simon
authors.initials: S
authors.lastname: Hertenberger
authors.forename: Stefan
authors.initials: S
authors.lastname: Funk
authors.forename: Sara
authors.initials: S
authors.lastname: Mangialardo
authors.forename: Stefanie
authors.initials: S
authors.lastname: Morkötter
authors.forename: Gregor
authors.initials: G
authors.lastname: Koblmüller
authors.forename: Paolo
authors.initials: P
authors.lastname: Postorino
authors.forename: Gerhard
authors.initials: G
authors.lastname: Abstreiter