title: High-gain phototransistors based on a CVD MoS₂ monolayer.
abstract: A phototransistor based on a chemical vapor deposited (CVD) MoS2 monolayer exhibits a high photoresponsivity (2200 A W(-1) ) and an excellent photogain (5000). The presence of shallow traps contributes to the persistent photoconductivity. Ambient adsorbates act as p-dopants to MoS2 , decreasing the carrier mobility, photoresponsivity, and photogain.
authors.affiliation: Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan.
authors.forename: Wenjing
authors.initials: W
authors.lastname: Zhang
authors.forename: Jing-Kai
authors.initials: JK
authors.lastname: Huang
authors.forename: Chang-Hsiao
authors.initials: CH
authors.lastname: Chen
authors.forename: Yung-Huang
authors.initials: YH
authors.lastname: Chang
authors.forename: Yuh-Jen
authors.initials: YJ
authors.lastname: Cheng
authors.forename: Lain-Jong
authors.initials: LJ
authors.lastname: Li
mesh_terms: D004220:Disulfides / Q000737:chemistry*; D004553:Electric Conductivity; D008027:Light; D008982:Molybdenum / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry; D012822:Silicon Dioxide / Q000737:chemistry; D014173:Transistors, Electronic; D014835:Volatilization
chemical_list: D004220:Disulfides; D012822:Silicon Dioxide; D008982:Molybdenum; D012825:Silicon; C082964:molybdenum disulfide
keywords: ambient air; molybdenum disulfides; photogain; phototransistors