title: Effect of growth induced (non)stoichiometry on interfacial conductance in LaAlO3/SrTiO3.
abstract: We demonstrate a link between the growth process, the stoichiometry of LaAlO(3), and the interfacial electrical properties of LaAlO(3)/SrTiO(3) heterointerfaces. Varying the relative La:Al cation stoichiometry by a few atomic percent in films grown at 1×10(-3) Torr results in a 2 and 7 order-of-magnitude change in the 300 and 2 K sheet resistance, respectively, with highly conducting states occurring only in La-deficient or Al-excess films. Further reducing the growth pressure results in an increase of the carrier density and a dramatic change in mobility. We discuss the relative contributions of intrinsic and extrinsic effects in controlling the physical properties of this widely studied system.
authors.affiliation: Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois, Urbana-Champaign, Urbana, Illinois 61801, USA.
authors.forename: E
authors.initials: E
authors.lastname: Breckenfeld
authors.forename: N
authors.initials: N
authors.lastname: Bronn
authors.forename: J
authors.initials: J
authors.lastname: Karthik
authors.forename: A R
authors.initials: AR
authors.lastname: Damodaran
authors.forename: S
authors.initials: S
authors.lastname: Lee
authors.forename: N
authors.initials: N
authors.lastname: Mason
authors.forename: L W
authors.initials: LW
authors.lastname: Martin