title: Enhanced photoluminescence from porous silicon nanowire arrays.
abstract: The enhanced room-temperature photoluminescence of porous Si nanowire arrays and its mechanism are investigated. Over 4 orders of magnitude enhancement of light intensity is observed by tuning their nanostructures and surface modification. It is concluded that the localized states related to Si-O bonds and self-trapped excitations in the nanoporous structures are attributed to the strong light emission.
authors.affiliation: State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. cbli@semi.ac.cn.
authors.forename: Chunqian
authors.initials: C
authors.lastname: Zhang
authors.forename: Chuanbo
authors.initials: C
authors.lastname: Li
authors.forename: Zhi
authors.initials: Z
authors.lastname: Liu
authors.forename: Jun
authors.initials: J
authors.lastname: Zheng
authors.forename: Chunlai
authors.initials: C
authors.lastname: Xue
authors.forename: Yuhua
authors.initials: Y
authors.lastname: Zuo
authors.forename: Buwen
authors.initials: B
authors.lastname: Cheng
authors.forename: Qiming
authors.initials: Q
authors.lastname: Wang