title: Reduction of gate leakage current on AlGaN/GaN high electron mobility transistors by electron-beam irradiation.
abstract: This study examined the effect of electron-beam (E-beam) irradiation on the AIGaN/GaN HEMTs for the reduction of gate leakage. After E-beam irradiation, the gate leakage current significantly decreased from 2.68 x 10(-8) A to 4.69 x 10(-9) A at a drain voltage of 10 V. The maximum drain current density of the AIGaN/GaN HEMTs with E-beam irradiation increased 14%, and the threshold voltage exhibited a negative shift, when compared to that of the AIGaN/GaN HEMTs before E-beam irradiation. These results strongly suggest that the reduction of gate leakage current resulted from neutralization nitrogen vacancies and removing of oxygen impurities.
authors.affiliation: Department of Printed Electronics Engineering (WCU), Sunchon National University, Jeonnam 540-742, Korea.
authors.forename: S K
authors.initials: SK
authors.lastname: Oh
authors.forename: C G
authors.initials: CG
authors.lastname: Song
authors.forename: T
authors.initials: T
authors.lastname: Jang
authors.forename: Kwang-Choong
authors.initials: KC
authors.lastname: Kim
authors.forename: Y J
authors.initials: YJ
authors.lastname: Jo
authors.forename: J S
authors.initials: JS
authors.lastname: Kwak