title: Anelastic behavior in GaAs semiconductor nanowires.
abstract: The mechanical behavior of vertically aligned single-crystal GaAs nanowires grown on GaAs(111)B surface was investigated using in situ deformation transmission electron microscopy. Anelasticity was observed in nanowires with small diameters and the anelastic behavior was affected by the crystalline defects in the nanowires. The underlying mechanism for the observed anelasticity is discussed. The finding opens up the prospect of using nanowire materials for nanoscale damping applications.
authors.affiliation: School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney , Sydney, NSW 2006, Australia.
authors.forename: Bin
authors.initials: B
authors.lastname: Chen
authors.forename: Qiang
authors.initials: Q
authors.lastname: Gao
authors.forename: Yanbo
authors.initials: Y
authors.lastname: Wang
authors.forename: Xiaozhou
authors.initials: X
authors.lastname: Liao
authors.forename: Yiu-Wing
authors.initials: YW
authors.lastname: Mai
authors.forename: Hark Hoe
authors.initials: HH
authors.lastname: Tan
authors.forename: Jin
authors.initials: J
authors.lastname: Zou
authors.forename: Simon P
authors.initials: SP
authors.lastname: Ringer
authors.forename: Chennupati
authors.initials: C
authors.lastname: Jagadish