title: Quantum dot light-emitting diode with quantum dots inside the hole transporting layers.
abstract: We report a hybrid, quantum dot (QD)-based, organic light-emitting diode architecture using a noninverted structure with the QDs sandwiched between hole transporting layers (HTLs) outperforming the reference device structure implemented in conventional noninverted architecture by over five folds and suppressing the blue emission that is otherwise observed in the conventional structure because of the excess electrons leaking towards the HTL. It is predicted in the new device structure that 97.44% of the exciton formation takes place in the QD layer, while 2.56% of the excitons form in the HTL. It is found that the enhancement in the external quantum efficiency is mainly due to the stronger confinement of exciton formation to the QDs.
authors.affiliation: LUMINOUS! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore.
authors.forename: Kheng Swee
authors.initials: KS
authors.lastname: Leck
authors.forename: Yoga
authors.initials: Y
authors.lastname: Divayana
authors.forename: Dewei
authors.initials: D
authors.lastname: Zhao
authors.forename: Xuyong
authors.initials: X
authors.lastname: Yang
authors.forename: Agus Putu
authors.initials: AP
authors.lastname: Abiyasa
authors.forename: Evren
authors.initials: E
authors.lastname: Mutlugun
authors.forename: Yuan
authors.initials: Y
authors.lastname: Gao
authors.forename: Shuwei
authors.initials: S
authors.lastname: Liu
authors.forename: Swee Tiam
authors.initials: ST
authors.lastname: Tan
authors.forename: Xiao Wei
authors.initials: XW
authors.lastname: Sun
authors.forename: Hilmi Volkan
authors.initials: HV
authors.lastname: Demir