title: Low-temperature synthesis of graphene on Cu using plasma-assisted thermal chemical vapor deposition.
abstract: Plasma-assisted thermal chemical vapor deposition (CVD) was carried out to synthesize high-quality graphene film at a low temperature of 600°C. Monolayer graphene films were thus synthesized on Cu foil using various ratios of hydrogen and methane in a gaseous mixture. The in situ plasma emission spectrum was measured to elucidate the mechanism of graphene growth in a plasma-assisted thermal CVD system. According to this process, a distance must be maintained between the plasma initial stage and the deposition stage to allow the plasma to diffuse to the substrate. Raman spectra revealed that a higher hydrogen concentration promoted the synthesis of a high-quality graphene film. The results demonstrate that plasma-assisted thermal CVD is a low-cost and effective way to synthesis high-quality graphene films at low temperature for graphene-based applications.
authors.affiliation: Department of Optics and Photonics/Thin Film Technology Center, National Central University, 300 Chung-Da Rd, Chung-Li, 32001, Taiwan. cckuo@ncu.edu.tw.
authors.forename: Shih-Hao
authors.initials: SH
authors.lastname: Chan
authors.forename: Sheng-Hui
authors.initials: SH
authors.lastname: Chen
authors.forename: Wei-Ting
authors.initials: WT
authors.lastname: Lin
authors.forename: Meng-Chi
authors.initials: MC
authors.lastname: Li
authors.forename: Yung-Chang
authors.initials: YC
authors.lastname: Lin
authors.forename: Chien-Cheng
authors.initials: CC
authors.lastname: Kuo