title: Highly efficient Yb3+-doped channel waveguide laser at 981 nm.
abstract: Channel waveguide lasers operating at 981 nm are demonstrated in KY(1-x-y)Gd(x)Lu(y)(WO4)2:Yb3+ waveguides grown by liquid phase epitaxy onto undoped KY(WO4)2 substrates and microstructured by Ar+ beam etching. Under pumping at 934 nm of samples with different waveguide geometry and outcoupling degree, a record-high slope efficiency of 76% versus absorbed pump power and a record-high output power of 650 mW for rare-earth-ion-doped microstructured channel waveguide lasers is achieved. The laser performance is compared to that of the same devices when pumping at 981 nm and lasing near 1025 nm.
authors.affiliation: Integrated Optical MicroSystems Group, MESA + Institute for Nanotechnology, University of Twente, Enschede, The Netherlands.
authors.forename: D
authors.initials: D
authors.lastname: Geskus
authors.forename: E H
authors.initials: EH
authors.lastname: Bernhardi
authors.forename: K
authors.initials: K
authors.lastname: van Dalfsen
authors.forename: S
authors.initials: S
authors.lastname: Aravazhi
authors.forename: M
authors.initials: M
authors.lastname: Pollnau