title: Demonstration of Silicon-on-insulator mid-infrared spectrometers operating at 3.8 μm.
abstract: The design and characterization of silicon-on-insulator mid-infrared spectrometers operating at 3.8 μm is reported. The devices are fabricated on 200 mm SOI wafers in a CMOS pilot line. Both arrayed waveguide grating structures and planar concave grating structures were designed and tested. Low insertion loss (1.5-2.5 dB) and good crosstalk characteristics (15-20 dB) are demonstrated, together with waveguide propagation losses in the range of 3 to 6 dB/cm.
authors.affiliation: Photonics Research Group, Department of Information Technology, Ghent University - IMEC, Sint-Pietersnieuwstraat 41, 9000 Ghent, Belgium.
authors.forename: M
authors.initials: M
authors.lastname: Muneeb
authors.forename: X
authors.initials: X
authors.lastname: Chen
authors.forename: P
authors.initials: P
authors.lastname: Verheyen
authors.forename: G
authors.initials: G
authors.lastname: Lepage
authors.forename: S
authors.initials: S
authors.lastname: Pathak
authors.forename: E
authors.initials: E
authors.lastname: Ryckeboer
authors.forename: A
authors.initials: A
authors.lastname: Malik
authors.forename: B
authors.initials: B
authors.lastname: Kuyken
authors.forename: M
authors.initials: M
authors.lastname: Nedeljkovic
authors.forename: J
authors.initials: J
authors.lastname: Van Campenhout
authors.forename: G Z
authors.initials: GZ
authors.lastname: Mashanovich
authors.forename: G
authors.initials: G
authors.lastname: Roelkens
mesh_terms: D004553:Electric Conductivity; D004867:Equipment Design; D019544:Equipment Failure Analysis; D012031:Refractometry / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry*; D013055:Spectrophotometry, Infrared / Q000295:instrumentation*; D020349:Surface Plasmon Resonance / Q000295:instrumentation*
chemical_list: D012825:Silicon