title: Dynamic random access memory devices based on bismuth sulfide nanoplates prepared from a single source precursor.
abstract: Semiconducting bismuth sulfide (Bi2S3) nanoplates with unique highly oriented {001} surfaces were prepared on a large scale using a novel organic precursor Bi(DTCA)3 (DTCA = carbazole-9-carbodithioic acid). The as-prepared Bi2S3 nanoplates were dispersed in dimethyl sulfoxide (DMSO) and spin-coated onto an indium tin oxide (ITO) coated glass substrate. With a simple ITO/Bi2S3/Al stacked structure, the fabricated sandwich-like memory device demonstrates dynamic random access memory (DRAM) characteristics with a maximum ON/OFF current ratio up to 10(6) and a long retention time. It is suggested that the volatile nature of the memory device comes from the Schottky contact between the Bi2S3 nanoplates and the Al electrodes.
authors.affiliation: Key laboratory of Organic Synthesis in Jiangsu Province, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China.
authors.forename: Gao-Yan
authors.initials: GY
authors.lastname: Liu
authors.forename: Ling-Yun
authors.initials: LY
authors.lastname: Xu
authors.forename: Feng
authors.initials: F
authors.lastname: Zhou
authors.forename: Yong
authors.initials: Y
authors.lastname: Zhang
authors.forename: Hua
authors.initials: H
authors.lastname: Li
authors.forename: Qing Feng
authors.initials: QF
authors.lastname: Xu
authors.forename: Jian Mei
authors.initials: JM
authors.lastname: Lu