title: Self assembled growth of GaSb nano triangles on GaN/sapphire substrate.
abstract: Self-assembled GaSb nano structures were grown on GaN/sapphire. GaSb nano triangles as well as quantum dots were obtained under controlled growth conditions. Nano triangles were grown at 580 degrees C due to the growth rate anisotropy among the (1100) planes. The size of nano triangle was 87 nm in width, 5 nm in height, and the density was 5 x 10(8) cm(-2), when the growth time was 30 s. This is the first report on the self assembled growth of nano triangles within a highly strained material system.
authors.affiliation: Department of Physics, Chonnam National University, Gwangju 500-757, Korea.
authors.forename: Se-Hoon
authors.initials: SH
authors.lastname: Moon
authors.forename: Joonmo
authors.initials: J
authors.lastname: Park
authors.forename: June Key
authors.initials: JK
authors.lastname: Lee
authors.forename: Sang-Wan
authors.initials: SW
authors.lastname: Ryu