title: Double-gate junctionless transistor for analog applications.
abstract: In this paper, analog performance of short channel symmetric double-gate junctionless transistor (DGJLT) is reported for the first time. The analog performance parameters, namely drain current (I(D)), transconductance (G(m)), transconductance/drain current ratio (G(m)/I(D)), early voltage (V(EA)), drain output conductance (G(D)), output resistance (R(o)), intrinsic gain (G(m)R(o)), gate to source capacitance (C(GS)), gate to drain capacitance (C(GD)) and unity gain cut-off frequency (f(T)) for the n-type DGJLT are systematically investigated with the help of extensive device simulations and are compared with conventional inversion mode symmetric double-gate transistor (DGMOS) of similar dimensions. DGJLT offers superior transconductance/drain current ratio and intrinsic gain in the subthreshold region than its inversion mode counterpart having same dimensions. However, DGMOS presents higher unity gain cut-off frequency which makes it suitable for high speed applications as compared to a DGJLT transistor.
authors.affiliation: Department of Electronics and Electrical Engineering, Indian Institute of Technology, Guwahati, Guwahati 39, India.
authors.forename: Ratul Kumar
authors.initials: RK
authors.lastname: Baruah
authors.forename: Roy
authors.initials: R
authors.lastname: Pally