title: Mg composition dependent band offsets of Zn(1-x)Mg(x)O/ZnO heterojunctions.
abstract: The valence band offsets (ΔEV) of Zn(1-x)Mg(x)O/ZnO heterojunctions grown by plasma-assisted molecular beam epitaxy were measured by photoelectron spectroscopy. From the directly obtained ΔEV values, the related conduction band offsets (ΔEC) were deduced. All the Zn(1-x)Mg(x)O/ZnO heterojunctions exhibit a type-I band alignment with the ΔEC/ΔEV estimated to be 1.5, 1.8, 2.0 for x = 0.10, 0.15 and 0.20, respectively. The band offsets of Zn(1-x)Mg(x)O/ZnO heterojunctions depend on Mg composition. The accurate determination of energy band alignment of Zn(1-x)Mg(x)O/ZnO is helpful for designing ZnO based optoelectronic devices.
authors.affiliation: State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China.
authors.forename: H H
authors.initials: HH
authors.lastname: Zhang
authors.forename: X H
authors.initials: XH
authors.lastname: Pan
authors.forename: B
authors.initials: B
authors.lastname: Lu
authors.forename: J Y
authors.initials: JY
authors.lastname: Huang
authors.forename: P
authors.initials: P
authors.lastname: Ding
authors.forename: W
authors.initials: W
authors.lastname: Chen
authors.forename: H P
authors.initials: HP
authors.lastname: He
authors.forename: J G
authors.initials: JG
authors.lastname: Lu
authors.forename: S S
authors.initials: SS
authors.lastname: Chen
authors.forename: Z Z
authors.initials: ZZ
authors.lastname: Ye