title: Electromagnetically induced grating in asymmetric quantum wells via Fano interference.
abstract: We propose a scheme for obtaining an electromagnetically induced grating in an asymmetric semiconductor quantum well (QW) structure via Fano interference. In our structure, owing to Fano interference, the diffraction intensity of the grating, especially the first-order diffraction, can be significantly enhanced. The diffraction efficiency of the grating can be controlled efficiently by tuning the control field intensity, the interaction length, the coupling strength of tunneling, etc. This investigation may be used to develop novel photonic devices in semiconductor QW systems.
authors.affiliation: Department of Physics, East China University of Science and Technology, Shanghai 200237, China.
authors.forename: Fengxue
authors.initials: F
authors.lastname: Zhou
authors.forename: Yihong
authors.initials: Y
authors.lastname: Qi
authors.forename: Hui
authors.initials: H
authors.lastname: Sun
authors.forename: Dijun
authors.initials: D
authors.lastname: Chen
authors.forename: Jie
authors.initials: J
authors.lastname: Yang
authors.forename: Yueping
authors.initials: Y
authors.lastname: Niu
authors.forename: Shangqing
authors.initials: S
authors.lastname: Gong
mesh_terms: D003198:Computer Simulation; D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D060526:Magnetic Fields; D008280:Magnetics / Q000295:instrumentation*; D008962:Models, Theoretical; D012031:Refractometry / Q000295:instrumentation*; D012666:Semiconductors; D020349:Surface Plasmon Resonance / Q000295:instrumentation*