title: 50-Gb/s ring-resonator-based silicon modulator.
abstract: We achieved 50-Gb/s operation of a ring-resonator-based silicon modulator for the first time. The pin-diode phase shifter, which consists of a side-wall-grating waveguide, was loaded into the ring resonator. The forward-biased operation mode was applied, which exhibited a V(π)L as small as 0.28 V · cm at 25 GHz. The driving voltage and optical insertion loss at 50-Gb/s were 1.96 V(pp) and 5.2 dB, respectively.
authors.affiliation: Photonics Electronics Technology Research Association, Japan. t-baba@petra-jp.org
authors.forename: Takeshi
authors.initials: T
authors.lastname: Baba
authors.forename: Suguru
authors.initials: S
authors.lastname: Akiyama
authors.forename: Masahiko
authors.initials: M
authors.lastname: Imai
authors.forename: Naoki
authors.initials: N
authors.lastname: Hirayama
authors.forename: Hiroyuki
authors.initials: H
authors.lastname: Takahashi
authors.forename: Yoshiji
authors.initials: Y
authors.lastname: Noguchi
authors.forename: Tsuyoshi
authors.initials: T
authors.lastname: Horikawa
authors.forename: Tatsuya
authors.initials: T
authors.lastname: Usuki
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D012666:Semiconductors; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry*; D020349:Surface Plasmon Resonance / Q000295:instrumentation*; D013685:Telecommunications / Q000295:instrumentation*; D014159:Transducers
chemical_list: D012825:Silicon