title: A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells.
abstract: We report on a simple and reproducible method for fabricating InGaN/GaN multi-quantum-well (MQW) nanorod light-emitting diodes (LEDs), prepared by combining a SiO2nanosphere lithography and dry-etch process. Focused-ion-beam (FIB)-deposited Pt was contacted to both ends of the nanorod LEDs, producing bright electroluminescence from the LEDs under forward bias conditions. The turn-on voltage in these nanorod LEDs was higher (13 V) than in companion thin film devices (3 V) and this can be attributed to the high contact resistance between the FIB-deposited Pt and nanorod LEDs and the damage induced by inductively-coupled plasma and Ga + -ions. Our method to obtain uniform MQW nanorod LEDs shows promise for improving the reproducibility of nano-optoelectronics.
authors.affiliation: Department of Chemical & Biological Engineering, Korea University, Seoul 136-701 South Korea.
authors.forename: Hyunik
authors.initials: H
authors.lastname: Park
authors.forename: Kwang Hyeon
authors.initials: KH
authors.lastname: Baik
authors.forename: Jihyun
authors.initials: J
authors.lastname: Kim
authors.forename: Fan
authors.initials: F
authors.lastname: Ren
authors.forename: Stephen J
authors.initials: SJ
authors.lastname: Pearton
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008029:Lighting / Q000295:instrumentation*; D008422:Materials Testing; D053768:Metal Nanoparticles / Q000737:chemistry* / Q000648:ultrastructure; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure; D012666:Semiconductors
chemical_list: D007204:Indium; C473348:gallium nitride; D005708:Gallium; C513701:indium nitride