title: Growth of aluminum catalyzed AlGaAs nanowires on silicon substrate.
abstract: Aluminum catalyzed AlGaAs nanowires were fabricated on Si (111) substrates using metal-organic chemical vapor deposition (MOCVD) technique at a low growth temperature of 450 degrees C. Grown structures were characterized by field emission scanning electron microscope (FE-SEM), energy-dispersive X-ray spectroscopy (EDS) and photoluminescence (PL) techniques. Nanowire clusters were observed all over the substrate. Multiprong root-grown AlGaAs nanowire clusters as well as catalyst particle terminated growth was observed. The growth is explained by Vapor-Solid-Solid (VSS) and Vapor-Solid (VS) growth mechanisms using Al-Si binary phase diagram. EDS and PL measurement confirm the formation of AlGaAs nanowires.
authors.affiliation: Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi 110054, India.
authors.forename: R K
authors.initials: RK
authors.lastname: Bag
authors.forename: P
authors.initials: P
authors.lastname: Mohan
authors.forename: S
authors.initials: S
authors.lastname: Singh
authors.forename: A
authors.initials: A
authors.lastname: Kumar
authors.forename: R
authors.initials: R
authors.lastname: Tyagi
authors.forename: D K
authors.initials: DK
authors.lastname: Pandya
authors.forename: R
authors.initials: R
authors.lastname: Singh