title: Sensitization of p-GaP with CdSe quantum dots: light-stimulated hole injection.
abstract: The sensitization of p-GaP by adsorbed CdSe quantum dots has been observed. Nondegenerately doped, planar p-GaP(100) photoelectrodes consistently showed sub-band-gap (>550 nm) photoresponsivity in an aqueous electrolyte containing Eu(3+/2+) when CdSe quantum dots (diameters ranging from 3.1 to 4.5 nm) were purposely adsorbed on the surface. Both time-resolved photoluminescence decays and steady-state photoelectrochemical responses supported sensitized hole injection from the CdSe quantum dots into p-GaP. The observation of hole injection in this system stands in contrast to sensitized electron injection seen in other metal oxide/quantum dot material combinations and therefore widens the possible designs for photoelectrochemical energy conversion systems that utilize quantum dots as light-harvesting components.
authors.affiliation: Department of Chemistry, University of Michigan, 930 North University Avenue, Ann Arbor, Michigan 48109-1055, United States.
authors.forename: Zhijie
authors.initials: Z
authors.lastname: Wang
authors.forename: Anisha
authors.initials: A
authors.lastname: Shakya
authors.forename: Junsi
authors.initials: J
authors.lastname: Gu
authors.forename: Shichen
authors.initials: S
authors.lastname: Lian
authors.forename: Stephen
authors.initials: S
authors.lastname: Maldonado
mesh_terms: D000327:Adsorption; D019187:Cadmium Compounds / Q000737:chemistry*; D004566:Electrodes; D005708:Gallium / Q000737:chemistry*; D008027:Light; D010758:Phosphorus / Q000737:chemistry*; D016062:Porosity; D045663:Quantum Dots; D018036:Selenium Compounds / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D019187:Cadmium Compounds; D018036:Selenium Compounds; D010758:Phosphorus; C058667:cadmium selenide; D005708:Gallium