title: Doping of organic semiconductors: impact of dopant strength and electronic coupling.
abstract: Molecular doping: The standard model for molecular p-doping of organic semiconductors (OSCs) assumes integer charge transfer between OSC and dopant. This is in contrast to an alternative model based on intermolecular complex formation instead. By systematically varying the acceptor strength it was possible to discriminate the two models. The latter is clearly favored, suggesting strategies for the chemical design of more efficient molecular dopants.
authors.affiliation: Humboldt-Universität zu Berlin, Institut für Physik, Brook-Taylor-Strasse 6, 12489 Berlin, Germany.
authors.forename: Henry
authors.initials: H
authors.lastname: Méndez
authors.forename: Georg
authors.initials: G
authors.lastname: Heimel
authors.forename: Andreas
authors.initials: A
authors.lastname: Opitz
authors.forename: Katrein
authors.initials: K
authors.lastname: Sauer
authors.forename: Patrick
authors.initials: P
authors.lastname: Barkowski
authors.forename: Martin
authors.initials: M
authors.lastname: Oehzelt
authors.forename: Junshi
authors.initials: J
authors.lastname: Soeda
authors.forename: Toshihiro
authors.initials: T
authors.lastname: Okamoto
authors.forename: Jun
authors.initials: J
authors.lastname: Takeya
authors.forename: Jean-Baptiste
authors.initials: JB
authors.lastname: Arlin
authors.forename: Jean-Yves
authors.initials: JY
authors.lastname: Balandier
authors.forename: Yves
authors.initials: Y
authors.lastname: Geerts
authors.forename: Norbert
authors.initials: N
authors.lastname: Koch
authors.forename: Ingo
authors.initials: I
authors.lastname: Salzmann
keywords: UV/Vis spectroscopy; doping; electronic structure; semiconductors