title: Room-temperature tunneling behavior of boron nitride nanotubes functionalized with gold quantum dots.
abstract: One-dimensional arrays of gold quantum dots (QDs) on insulating boron nitride nanotubes (BNNTs) can form conduction channels of tunneling field-effect transistors. We demonstrate that tunneling currents can be modulated at room temperature by tuning the lengths of QD-BNNTs and the gate potentials. Our discovery will inspire the creative use of nanostructured metals and insulators for future electronic devices.
authors.affiliation: Department of Physics, Michigan Technological University, Houghton, MI 49931, USA.
authors.forename: Chee Huei
authors.initials: CH
authors.lastname: Lee
authors.forename: Shengyong
authors.initials: S
authors.lastname: Qin
authors.forename: Madhusudan A
authors.initials: MA
authors.lastname: Savaikar
authors.forename: Jiesheng
authors.initials: J
authors.lastname: Wang
authors.forename: Boyi
authors.initials: B
authors.lastname: Hao
authors.forename: Dongyan
authors.initials: D
authors.lastname: Zhang
authors.forename: Douglas
authors.initials: D
authors.lastname: Banyai
authors.forename: John A
authors.initials: JA
authors.lastname: Jaszczak
authors.forename: Kendal W
authors.initials: KW
authors.lastname: Clark
authors.forename: Juan-Carlos
authors.initials: JC
authors.lastname: Idrobo
authors.forename: An-Ping
authors.initials: AP
authors.lastname: Li
authors.forename: Yoke Khin
authors.initials: YK
authors.lastname: Yap
keywords: boron nitride nanosheets; boron nitride nanotubes; quantum dots; tunneling; tunneling field-effect transistors