title: Silicon nitride CMOS-compatible platform for integrated photonics applications at visible wavelengths.
abstract: Silicon nitride is demonstrated as a high performance and cost-effective solution for dense integrated photonic circuits in the visible spectrum. Experimental results for nanophotonic waveguides fabricated in a standard CMOS pilot line with losses below 0.71dB/cm in an aqueous environment and 0.51dB/cm with silicon dioxide cladding are reported. Design and characterization of waveguide bends, grating couplers and multimode interference couplers (MMI) at a wavelength of 660 nm are presented. The index contrast of this technology enables high integration densities with insertion losses below 0.05 dB per 90° bend for radii as small as 35 µm. By a proper design of the buried oxide layer thickness, grating couplers with efficiencies above 38% for the TE polarization have been obtained.
authors.affiliation: Integrated Photonics Laboratory (IPH), RWTH Aachen University, Sommerfeldstrasse 24, 52074 Aachen, Germany. sromero@iph.rwth-aachen.de
authors.forename: Sebastian
authors.initials: S
authors.lastname: Romero-García
authors.forename: Florian
authors.initials: F
authors.lastname: Merget
authors.forename: Frank
authors.initials: F
authors.lastname: Zhong
authors.forename: Hod
authors.initials: H
authors.lastname: Finkelstein
authors.forename: Jeremy
authors.initials: J
authors.lastname: Witzens
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D017785:Photons; D012031:Refractometry / Q000295:instrumentation*; D012666:Semiconductors; D017655:Silicon Compounds / Q000737:chemistry*; D020349:Surface Plasmon Resonance / Q000295:instrumentation*; D018511:Systems Integration
chemical_list: D017655:Silicon Compounds; C032734:silicon nitride