title: Persistent enhancement of the carrier density in electron irradiated InAs nanowires.
abstract: We report a significant and persistent enhancement of the conductivity in free-standing non-intentionally doped InAs nanowires upon irradiation in ultra-high vacuum. Combining four-point probe transport measurements performed on nanowires with different surface chemistries, field effect based measurements and numerical simulations of the electron density, the change in the conductivity is found to be caused by an increase in the surface free carrier concentration. Although an electron beam of a few keV, typically used for the inspection and the processing of materials, propagates through the entire nanowire cross-section, we demonstrate that the electrical properties of the nanowire are predominantly affected by radiation-induced defects occurring at the nanowire surface and not in the bulk.
authors.affiliation: Institut d'Electronique, de Microélectronique et de Nanotechnologie, IEMN, (CNRS, UMR 8520), Département ISEN, Lille, France.
authors.forename: Corentin
authors.initials: C
authors.lastname: Durand
authors.forename: Maxime
authors.initials: M
authors.lastname: Berthe
authors.forename: Younes
authors.initials: Y
authors.lastname: Makoudi
authors.forename: Jean-Philippe
authors.initials: JP
authors.lastname: Nys
authors.forename: Renaud
authors.initials: R
authors.lastname: Leturcq
authors.forename: Philippe
authors.initials: P
authors.lastname: Caroff
authors.forename: Bruno
authors.initials: B
authors.lastname: Grandidier