title: Nanosecond pulsed laser damage characteristics of HfO2/SiO2 high reflection coatings irradiated from crystal-film interface.
abstract: The nano-precursors in the subsurface of Nd:YLF crystal were limiting factor that decreased the laser-induced damage threshold (LIDT) of HfO(2)/SiO(2) high reflection (HR) coatings irradiated from crystal-film interface. To investigate the contribution of electric-field (E-field) to laser damage originating from nano-precursors and then to probe the distribution of vulnerable nano-precursors in the direction of subsurface depth, two 1064 nm HfO(2)/SiO(2) HR coatings having different standing-wave (SW) E-field distributions in subsurface of Nd:YLF c5424181043036123rystal were designed and prepared. Artificial gold nano-particles were implanted into the crystal-film interface prior to deposition of HR coatings to study the damage behaviors in a more reliable way. The damage test results revealed that the SW E-field rather than the travelling-wave (TW) E-field contributed to laser damage. By comparing the SW E-field distributions and LIDTs of two HR coating designs, the most vulnerable nano-precursors were determined to be concentrated in a thin redeposition layer that is within 100 nm from the crystal-film interface.
authors.affiliation: Key laboratory of advanced micro-structure materials, Ministry of Education, Shanghai, 200092, China.
authors.forename: Xinbin
authors.initials: X
authors.lastname: Cheng
authors.forename: Hongfei
authors.initials: H
authors.lastname: Jiao
authors.forename: Jiangtao
authors.initials: J
authors.lastname: Lu
authors.forename: Bin
authors.initials: B
authors.lastname: Ma
authors.forename: Zhanshan
authors.initials: Z
authors.lastname: Wang
mesh_terms: D003461:Crystallography; D004867:Equipment Design; D019544:Equipment Failure Analysis; D006195:Hafnium / Q000528:radiation effects*; D007834:Lasers; D007909:Lenses; D008422:Materials Testing; D008567:Membranes, Artificial; D010087:Oxides / Q000528:radiation effects*; D012822:Silicon Dioxide / Q000528:radiation effects*; D013499:Surface Properties / Q000528:radiation effects
chemical_list: D008567:Membranes, Artificial; D010087:Oxides; C545179:hafnium oxide; D012822:Silicon Dioxide; D006195:Hafnium