title: Kinetics of Schottky defect formation and annihilation in single crystal TlBr.
abstract: The kinetics for Schottky defect (Tl and Br vacancy pair) formation and annihilation in ionically conducting TlBr are characterized through a temperature induced conductivity relaxation technique. Near room temperature, defect generation-annihilation was found to take on the order of hours before equilibrium was reached after a step change in temperature, and that mechanical damage imparted on the sample rapidly increases this rate. The rate limiting step to Schottky defect formation-annihilation is identified as being the migration of lower mobility Tl (versus Br), with an estimate for source-sink density derived from calculated diffusion lengths. This study represents one of the first investigations of Schottky defect generation-annihilation kinetics and demonstrates its utility in quantifying detrimental mechanical damage in radiation detector materials.
authors.affiliation: Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA. srbishop@mit.edu
authors.forename: Sean R
authors.initials: SR
authors.lastname: Bishop
authors.forename: Harry L
authors.initials: HL
authors.lastname: Tuller
authors.forename: Melanie
authors.initials: M
authors.lastname: Kuhn
authors.forename: Guido
authors.initials: G
authors.lastname: Ciampi
authors.forename: William
authors.initials: W
authors.lastname: Higgins
authors.forename: Kanai S
authors.initials: KS
authors.lastname: Shah