title: Tunable electronic transport properties of metal-cluster-decorated III-V nanowire transistors.
abstract: A metal-cluster-decoration approach is utilized to tailor electronic transport properties (e.g., threshold voltage) of III-V NWFETs through the modulation of free carriers in the NW channel via the deposition of different metal clusters with different work function. The versatility of this technique has been demonstrated through the fabrication of high-mobility enhancement-mode InAs NW parallel FETs as well as the construction of low-power InAs NW inverters.
authors.affiliation: Department of Physics and Materials Science and Centre for Functional Photonics (CFP), City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S. A. R.
authors.forename: Ning
authors.initials: N
authors.lastname: Han
authors.forename: Fengyun
authors.initials: F
authors.lastname: Wang
authors.forename: Jared J
authors.initials: JJ
authors.lastname: Hou
authors.forename: Sen Po
authors.initials: SP
authors.lastname: Yip
authors.forename: Hao
authors.initials: H
authors.lastname: Lin
authors.forename: Fei
authors.initials: F
authors.lastname: Xiu
authors.forename: Ming
authors.initials: M
authors.lastname: Fang
authors.forename: Zaixing
authors.initials: Z
authors.lastname: Yang
authors.forename: Xiaoling
authors.initials: X
authors.lastname: Shi
authors.forename: Guofa
authors.initials: G
authors.lastname: Dong
authors.forename: Tak Fu
authors.initials: TF
authors.lastname: Hung
authors.forename: Johnny C
authors.initials: JC
authors.lastname: Ho
keywords: III-V nanowire field-effect transistors; contact printing; inverters; metal decoration; n-channel metal-oxide-semiconductor (NMOS); threshold voltage modulation