title: Wet chemical etching of semipolar GaN planes to obtain brighter and cost-competitive light emitters.
abstract: Spotlight on etching: (11-22) semipolar GaN plane light-emitting diodes (LEDs) are demonstrated using a wet-etching process. A trigonal prism cell structure with a (0001) c plane and nnn{10-10} m planes is formed after KOH wet etching, and leads to a better ohmic contact and enhanced light extraction. LEDs fabricated by wet etching show excellent output performance 1.89 times higher than that of the reference LEDs.
authors.affiliation: School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju, Chonbuk, Republic of Korea.
authors.forename: Sungmin
authors.initials: S
authors.lastname: Jung
authors.forename: Ki-Ryong
authors.initials: KR
authors.lastname: Song
authors.forename: Sung-Nam
authors.initials: SN
authors.lastname: Lee
authors.forename: Hyunsoo
authors.initials: H
authors.lastname: Kim
keywords: extraction efficiencies; light emitting diodes; ohmic contacts; semipolar GaN planes; wet etching