title: Photoinduced charge transfer process in p-Cu2O/n-Cu2O homojunction film and its photoelectric gas-sensing properties.
abstract: In this study, the p-Cu2O/n-Cu2O homojunction film was prepared by a simple two-step electrodeposition method. The photoinduced charge transfer process in p-Cu2O/n-Cu2O homojunction film was studied using surface photovoltage technique. Then, the p-Cu2O/n-Cu2O homojunction film was assembled into a photoelectric gas sensor for sensing acetaldehyde both under 405 nm and 532 nm light irradiation at room temperature. For 532 nm light irradiation, excess photoinduced electrons migrate to the irradiated n-Cu2O side affected by the interfacial built-in electric field and promote desorption of acetaldehyde, which results in a higher sensitivity than that under 405 nm light. Our results demonstrated that constructing junction structure in photoelectric gas-sensing materials is an effective approach to achieve high sensitivity at room temperature.
authors.affiliation: College of Chemistry, Jilin University, Changchun 130012, People's Republic of China.
authors.forename: Tengfei
authors.initials: T
authors.lastname: Jiang
authors.forename: Tengfeng
authors.initials: T
authors.lastname: Xie
authors.forename: Wanshi
authors.initials: W
authors.lastname: Yang
authors.forename: Haimei
authors.initials: H
authors.lastname: Fan
authors.forename: Dejun
authors.initials: D
authors.lastname: Wang
mesh_terms: D000042:Absorption; D000079:Acetaldehyde / Q000737:chemistry*; D003300:Copper / Q000737:chemistry*; D004583:Electrons; D005740:Gases; D008027:Light; D008855:Microscopy, Electron, Scanning; D010777:Photochemistry; D012666:Semiconductors; D013696:Temperature; D014961:X-Ray Diffraction
chemical_list: D005740:Gases; D003300:Copper; D000079:Acetaldehyde; C030973:cupric oxide