title: Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning.
abstract: An innovative strategy in dislocation analysis, based on comparison between continuous and tessellated film, demonstrates that vertical dislocations, extending straight up to the surface, easily dominate in thick Ge layers on Si(001) substrates. The complete elimination of dislocations is achieved by growing self-aligned and self-limited Ge microcrystals with fully faceted growth fronts, as demonstrated by AFM extensive etch-pit counts.
authors.affiliation: L-NESS and Dept. of Materials Science, Università degli Studi di Milano-Bicocca, via Cozzi 53, Milan, Italy. anna.marzegalli@unimib.it
authors.forename: Anna
authors.initials: A
authors.lastname: Marzegalli
authors.forename: Fabio
authors.initials: F
authors.lastname: Isa
authors.forename: Heiko
authors.initials: H
authors.lastname: Groiss
authors.forename: Elisabeth
authors.initials: E
authors.lastname: Müller
authors.forename: Claudiu V
authors.initials: CV
authors.lastname: Falub
authors.forename: Alfonso G
authors.initials: AG
authors.lastname: Taboada
authors.forename: Philippe
authors.initials: P
authors.lastname: Niedermann
authors.forename: Giovanni
authors.initials: G
authors.lastname: Isella
authors.forename: Friedrich
authors.initials: F
authors.lastname: Schäffler
authors.forename: Francesco
authors.initials: F
authors.lastname: Montalenti
authors.forename: Hans
authors.initials: H
authors.lastname: von Känel
authors.forename: Leo
authors.initials: L
authors.lastname: Miglio
keywords: Ge; dislocations; heteroepitaxy; patterning; semiconductors