title: Anti-solvent derived non-stacked reduced graphene oxide for high performance supercapacitors.
abstract: An anti-solvent for graphene oxide (GO), hexane, is introduced to increase the surface area and the pore volume of the non-stacked GO/reduced GO 3D structure and allows the formation of a highly crumpled non-stacked GO powder, which clearly shows ideal supercapacitor behavior.
authors.affiliation: NCRI, Center for Smart Molecular Memory, Department of Energy Science, Department of Chemistry, Sungkyunkwan University, Suwon, Republic of Korea.
authors.forename: Yeoheung
authors.initials: Y
authors.lastname: Yoon
authors.forename: Keunsik
authors.initials: K
authors.lastname: Lee
authors.forename: Chul
authors.initials: C
authors.lastname: Baik
authors.forename: Heejoun
authors.initials: H
authors.lastname: Yoo
authors.forename: Misook
authors.initials: M
authors.lastname: Min
authors.forename: Younghun
authors.initials: Y
authors.lastname: Park
authors.forename: Sae Mi
authors.initials: SM
authors.lastname: Lee
authors.forename: Hyoyoung
authors.initials: H
authors.lastname: Lee
keywords: anti-solvents; high porosity; non-stacked graphene oxide; supercapacitor