title: A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator.
abstract: BACKGROUND
  An experimental and theoretical study of a silicon-nanowire field-effect transistor made of silicon on insulator by CMOS-compatible methods is presented.
  
  
  RESULTS
  A maximum Nernstian sensitivity to pH change of 59 mV/pH was obtained experimentally. The maximum charge sensitivity of the sensor was estimated to be on the order of a thousandth of the electron charge in subthreshold mode.
  
  
  CONCLUSIONS
  The sensitivity obtained for our sensor built in the CMOS-compatible top-down approach does not yield to the one of sensors built in bottom-up approaches. This provides a good background for the development of CMOS-compatible probes with primary signal processing on-chip.
authors.affiliation: Lomonosov Moscow State University Skobeltsyn Institute of Nuclear Physics, Moscow 119991, Russia ; Laboratory of Cryoelectronics, Lomonosov Moscow State University, Moscow 119991, Russia.
authors.forename: Denis E
authors.initials: DE
authors.lastname: Presnov
authors.forename: Sergey V
authors.initials: SV
authors.lastname: Amitonov
authors.forename: Pavel A
authors.initials: PA
authors.lastname: Krutitskii
authors.forename: Valentina V
authors.initials: VV
authors.lastname: Kolybasova
authors.forename: Igor A
authors.initials: IA
authors.lastname: Devyatov
authors.forename: Vladimir A
authors.initials: VA
authors.lastname: Krupenin
authors.forename: Igor I
authors.initials: II
authors.lastname: Soloviev
keywords: charge/field sensor; field-effect transistor; nanowire; pH sensor; silicon-on-insulator