title: Hybrid III-nitride/organic semiconductor nanostructure with high efficiency nonradiative energy transfer for white light emitters.
abstract: A novel hybrid inorganic/organic semiconductor nanostructure has been developed, leading to very efficient nonradiative resonant-energy-transfer (RET) between blue emitting InGaN/GaN multiple quantum wells (MQWs) and a yellow light emitting polymer. The utilization of InGaN/GaN nanorod arrays allows for both higher optical performance of InGaN blue emission and a minimized separation between the InGaN/GaN MQWs and the emitting polymer as a color conversion medium. A significant reduction in decay lifetime of the excitons in the InGaN/GaN MQWs of the hybrid structure has been observed as a result of the nonradiative RET from the nitride emitter to the yellow polymer. A detailed calculation has demonstrated that the efficiency of the nonradiative RET is as high as 73%. The hybrid structure exhibits an extremely fast nonradiative RET with a rate of 0.76 ns(-1), approximately three times higher than the InGaN/GaN MQW nonradiative decay rate of 0.26 ns(-1). It means that the RET dominates the nonradiative processes in the nitride quantum well structure, which can further enhance the overall device performance.
authors.affiliation: Department of Electronic and Electrical Engineering, University of Sheffield , Mappin Street, S1 3JD, Sheffield, United Kingdom.
authors.forename: R
authors.initials: R
authors.lastname: Smith
authors.forename: B
authors.initials: B
authors.lastname: Liu
authors.forename: J
authors.initials: J
authors.lastname: Bai
authors.forename: T
authors.initials: T
authors.lastname: Wang