title: Note: high sensitivity self-bias magnetoelectric sensor with two different magnetostrictive materials.
abstract: The self-bias magnetoelectric (ME) sensor is designed, fabricated, and characterized for detecting weak ac magnetic-field. The two different magnetostrictive materials produce the gradient of magnetization, resulting in an internal magnetic field and a strong ME response. At zero-biased dc magnetic field, a low-frequency ME voltage coefficient (dVME∕dHac) of 22.11 mV∕Oe is achieved, which is 17.69 times higher than that of the previous magnets∕0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) sensor. Furthermore, the ME voltage coefficient reaches 2.73 V∕Oe at resonance. The induced ME voltage shows an excellent linear relationship to ac magnetic field when field amplitude varies from ~10(-7) Oe to 1 Oe.
authors.affiliation: Research Center of Sensors and Instruments, College of Optoelectronic Engineering, Chongqing University, Chongqing City 400044, People's Republic of China.
authors.forename: Lei
authors.initials: L
authors.lastname: Chen
authors.forename: Ping
authors.initials: P
authors.lastname: Li
authors.forename: Yumei
authors.initials: Y
authors.lastname: Wen
authors.forename: Yong
authors.initials: Y
authors.lastname: Zhu