title: Formation of a stable p-n junction in a liquid-gated MoS2 ambipolar transistor.
abstract: Molybdenum disulfide (MoS2) has gained attention because of its high mobility and circular dichroism. As a crucial step to merge these advantages into a single device, we present a method that electronically controls and locates p-n junctions in liquid-gated ambipolar MoS2 transistors. A bias-independent p-n junction was formed, and it displayed rectifying I-V characteristics. This p-n diode could perform a crucial role in the development of optoelectronic valleytronic devices.
authors.affiliation: Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo , 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.
authors.forename: Y J
authors.initials: YJ
authors.lastname: Zhang
authors.forename: J T
authors.initials: JT
authors.lastname: Ye
authors.forename: Y
authors.initials: Y
authors.lastname: Yomogida
authors.forename: T
authors.initials: T
authors.lastname: Takenobu
authors.forename: Y
authors.initials: Y
authors.lastname: Iwasa