title: In-plane optical anisotropy of InAs/GaSb superlattices with alternate interfaces.
abstract: The in-plane optical anisotropy (IPOA) in InAs/GaSb superlattices has been studied by reflectance difference spectroscopy (RDS) at different temperatures ranging from 80 to 300 K. We introduce alternate GaAs- and InSb-like interfaces (IFs), which cause the symmetry reduced from D 2d to C 2v . IPOA has been observed in the (001) plane along [110] and [1[Formula: see text]0] axes. RDS measurement results show strong anisotropy resonance near critical point (CP) energies of InAs and GaSb. The energy positions show red shift and RDS intensity decreases with the increasing temperature. For the superlattice sample with the thicker InSb-like IFs, energy positions show red shift, and the spectra exhibit stronger IPOA. The excitonic effect is clearly observed by RDS at low temperatures. It demonstrates that biaxial strain results in the shift of the CP energies and IPOA is enhanced by the further localization of the carriers in InSb-like IFs.
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China ; Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China.
authors.forename: Shujie
authors.initials: S
authors.lastname: Wu
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China ; Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China.
authors.forename: Yonghai
authors.initials: Y
authors.lastname: Chen
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China ; Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China.
authors.forename: Jinling
authors.initials: J
authors.lastname: Yu
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China ; Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China.
authors.forename: Hansong
authors.initials: H
authors.lastname: Gao
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China ; Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China.
authors.forename: Chongyun
authors.initials: C
authors.lastname: Jiang
authors.affiliation: Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China.
authors.lastname: Huang
authors.affiliation: Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China.
authors.forename: Yanhua
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China.
authors.forename: Yang
authors.initials: Y
authors.lastname: Wei
authors.affiliation: Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China.
authors.forename: Wenquan
authors.initials: W
authors.lastname: Ma
keywords: 78.40.Fy; 78.66.Fd; 78.67.Pt; In-plane optical anisotropy; InAs/GaSb superlattices; Reflectance difference spectroscopy