title: Robust switching characteristics of CdSe/ZnS quantum dot non-volatile memory devices.
abstract: In this paper we report Al/CdSe-ZnS core-shell quantum dot/AlOx/CdSe-ZnS core-shell quantum dot/ITO based non-volatile resistive memory devices with an ON/OFF ratio of ~1000. The facile solution processed device exhibited excellent endurance characteristics for 200,000 switching cycles. Retention tests showed good stability for over 20,000 s and the devices are reproducible. A memory operating mechanism is proposed based on charge trapping-detrapping in core-shell quantum dots with AlOx acting as a barrier leading to Coulomb blockade. I-V characteristics of a three terminal device fabricated with the additional terminal wired-out from the middle AlOx layer supports the proposed charge trapping mechanism.
authors.affiliation: Millimeter-wave INnovation Technology Research Center (MINT), Dongguk University, Seoul 100-715, Republic of Korea.
authors.forename: V
authors.initials: V
authors.lastname: Kannan
authors.forename: J K
authors.initials: JK
authors.lastname: Rhee