title: Hybrid axial and radial Si-GaAs heterostructures in nanowires.
abstract: Hybrid structures are formed from materials of different families. Traditionally, group IV and III-V semiconductors have not been integrated together in the same device or application. In this work we present a new approach for obtaining Si-GaAs hybrid heterostructures in nanowires based on a combination of molecular beam epitaxy and plasma enhanced chemical vapor deposition. Crystalline Si segments are integrated into GaAs nanowires grown by the Ga-assisted growth method at temperatures as low as 250 °C. We find that one of the most important factors leading to the successful growth of Si segments on GaAs is the silane-hydrogen dilution, which affects the concentration of silicon and hydrogen-based radicals (SiHx with x < 3) in the plasma, and determines if the Si shell is amorphous, polycrystalline or crystalline, and also if the growth takes place in the axial and/or radial directions. This work opens the path for the successful integration of silicon and III-V materials in one single nanowire.
authors.affiliation: Laboratoire des Matériaux Semiconducteurs (LMSC), École Polytechnique Fédérale de Lausanne (EPFL), Lausanne 1015, Switzerland. anna.fontcuberta-morral@epfl.ch.
authors.forename: Sonia
authors.initials: S
authors.lastname: Conesa-Boj
authors.forename: Sylvain
authors.initials: S
authors.lastname: Dunand
authors.forename: Eleonora
authors.initials: E
authors.lastname: Russo-Averchi
authors.forename: Martin
authors.initials: M
authors.lastname: Heiss
authors.forename: Daniel
authors.initials: D
authors.lastname: Ruffer
authors.forename: Nicolas
authors.initials: N
authors.lastname: Wyrsch
authors.forename: Christophe
authors.initials: C
authors.lastname: Ballif
authors.forename: Anna
authors.initials: A
authors.lastname: Fontcuberta i Morral