title: Molecular beam epitaxy growth of peak wavelength-controlled InGaAs/AlGaAs quantum wells for 4.3-μm mid-wavelength infrared detection.
abstract: InGaAs/AlGaAs multiple quantum wells used for 4.3 μm mid-wavelength infrared quantum well infrared detectors were grown by molecular beam epitaxy. In composition loss was observed and quantitatively studied by high-resolution X-ray diffraction technology. By this In composition loss effect, the energy band engineering on the photo-response wavelength is not easily achieved. A thin AlGaAs barrier grown at low temperature is used to suppress the In atom desorption, and this growth process was verified to be able to adjust the photo-response wavelength as designed by energy band engineering in the photocurrent spectrum.
authors.affiliation: Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China. lwang@iphy.ac.cn.
authors.forename: Zhenwu
authors.initials: Z
authors.lastname: Shi
authors.forename: Lu
authors.initials: L
authors.lastname: Wang
authors.forename: Honglou
authors.initials: H
authors.lastname: Zhen
authors.forename: Wenxin
authors.initials: W
authors.lastname: Wang
authors.forename: Hong
authors.initials: H
authors.lastname: Chen