title: Self-induced gate dielectric for graphene field-effect transistor.
abstract: We report the electronic characteristics of an avant-garde graphene-field-effect transistor (G-FETs) based on ZnO microwire as top-gate electrode with self-induced dielectric layer. Surface-adsorbed oxygen is wrapped up the ZnO microwire to provide high electrostatic gate-channel capacitance. This nonconventional device structure yields an on-current of 175 μA, on/off current ratio of 55, and a device mobility exceeding 1630 cm(2)/(V s) for holes and 1240 cm(2)/(V s) for electrons at room temperature. Self-induced gate dielectric process prevents G-FETs from impurity doping and defect formation in graphene lattice and facilitates the lithographic process. Performance degradation of G-FETs can be overcome by this avant-garde device structure.
authors.affiliation: Nanomaterials and System Lab, Department of Mechatronics Engineering, Jeju National University, Jeju 690-756, Republic of Korea.
authors.forename: Kaliannan
authors.initials: K
authors.lastname: Thiyagarajan
authors.forename: Balasubramaniam
authors.initials: B
authors.lastname: Saravanakumar
authors.forename: Rajneesh
authors.initials: R
authors.lastname: Mohan
authors.forename: Sang-Jae
authors.initials: SJ
authors.lastname: Kim