title: Mapping of trap densities and hotspots in pentacene thin-film transistors by frequency-resolved scanning photoresponse microscopy.
abstract: Frequency-resolved scanning photoresponse microscopy of pentacene thin-film transistors is reported. The photoresponse pattern maps the in-plane distribution of trap states which is superimposed by the level of trap filling adjusted by the gate voltage of the transistor. Local hotspots in the photoresponse map thus indicate areas of high trap densities within the pentacene thin film.
authors.affiliation: Fakultät für Physik 8 CeNS, Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, 80539, Munich, Germany.
authors.forename: Christian
authors.initials: C
authors.lastname: Westermeier
authors.forename: Matthias
authors.initials: M
authors.lastname: Fiebig
authors.forename: Bert
authors.initials: B
authors.lastname: Nickel
mesh_terms: D007834:Lasers; D008853:Microscopy; D009279:Naphthacenes / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D009279:Naphthacenes; C523499:pentacene
keywords: accumulation layers; charge transport; excitons; organic field-effect transistors; trap release