title: High mobility N-type transistors based on solution-sheared doped 6,13-bis(triisopropylsilylethynyl)pentacene thin films.
abstract: An N-Type organic thin-film transistor (OTFT) based on doped 6,13-Bis(triisopropylsilylethynyl)pentacene is presented. A transition from p-type to n-type occurrs with increasing doping concentrations, and the highest performing n-channel OTFTs are obtained with 50 mol% dopant. X-ray diffraction, scanning Auger microscopy, and secondary ionization mass spectrometry are used to characterize the morphology of the blends. The high performance of the obtained transistors is attributed to the highly crystalline and aligned nature of the doped thin films.
authors.affiliation: Department of Chemical Engineering, Stanford University, 359 N-S Axis Stauffer III, Stanford, CA 94303, USA.
authors.forename: Benjamin D
authors.initials: BD
authors.lastname: Naab
authors.forename: Scott
authors.initials: S
authors.lastname: Himmelberger
authors.forename: Ying
authors.initials: Y
authors.lastname: Diao
authors.forename: Koen
authors.initials: K
authors.lastname: Vandewal
authors.forename: Peng
authors.initials: P
authors.lastname: Wei
authors.forename: Björn
authors.initials: B
authors.lastname: Lussem
authors.forename: Alberto
authors.initials: A
authors.lastname: Salleo
authors.forename: Zhenan
authors.initials: Z
authors.lastname: Bao
keywords: blend aligned crystals; complementary inverters; electron traps; grain boundaries; organic electronics