title: High-performance ZnO transistors processed via an aqueous carbon-free metal oxide precursor route at temperatures between 80-180 °C.
abstract: An aqueous and carbon-free metal-oxide precursor route is used in combination with a UV irradiation-assisted low-temperature conversion method to fabricate low-voltage ZnO transistors with electron mobilities exceeding 10 cm(2) /Vs at temperatures <180 °C. Because of its low temperature requirements the method allows processing of high-performance transistors onto temperature sensitive substrates such as plastic.
authors.affiliation: Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2AZ, United Kingdom.
authors.forename: Yen-Hung
authors.initials: YH
authors.lastname: Lin
authors.forename: Hendrik
authors.initials: H
authors.lastname: Faber
authors.forename: Kui
authors.initials: K
authors.lastname: Zhao
authors.forename: Qingxiao
authors.initials: Q
authors.lastname: Wang
authors.forename: Aram
authors.initials: A
authors.lastname: Amassian
authors.forename: Martyn
authors.initials: M
authors.lastname: McLachlan
authors.forename: Thomas D
authors.initials: TD
authors.lastname: Anthopoulos
keywords: UV conversion; plastic electronics; solution processing; thin film transistors; transparent electronics; zinc oxide