title: Morphological transition of Si surfaces from solid nanowires to porous nanobelts at room temperature.
abstract: Multiple etching pathways for the formation of porous Si nanostructures are visualized with the addition of ethylene glycol in metal-assisted chemical etching. The monotonic transition from solid to porous morphologies of Si nanostructures along with remarkable photoluminescence (PL) emission efficiency and distinct wetting phenomena can be observed.
authors.affiliation: School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive NW, Atlanta, Georgia 30332, USA.
authors.forename: Chia-Yun
authors.initials: CY
authors.lastname: Chen
authors.forename: Ching-Ping
authors.initials: CP
authors.lastname: Wong