title: Matching p-i-n-junctions and optical modes enables fast and ultra-small silicon modulators.
abstract: In this article a new method is presented that allows for low loss implementation of fast carrier transport structures in diffraction limited photonic crystal resonators. We utilize a 'node-matched doping' process in which precise silicon doping results in comb-like shaped, highly-doped diode areas that are matched to the spatial field distribution of the optical modes of a Fabry-Pérot resonator. While the doping is only applied to areas with low optical field strength, the intrinsic diode region overlaps with an optical field maximum. The presented node-matched diode-modulators, combining small size, high-speed, thermal stability and energy-efficient switching could become the centerpiece for monolithically integrated transceivers.
authors.affiliation: Technische Universität Berlin, Institut für Optik und Atomare Physik, Strasse des 17. Juni 135, 10623 Berlin, Germany. smeister@physik.tu-berlin.de
authors.forename: Stefan
authors.initials: S
authors.lastname: Meister
authors.forename: Hanjo
authors.initials: H
authors.lastname: Rhee
authors.forename: Aws
authors.initials: A
authors.lastname: Al-Saadi
authors.forename: Bülent A
authors.initials: BA
authors.lastname: Franke
authors.forename: Sebastian
authors.initials: S
authors.lastname: Kupijai
authors.forename: Christoph
authors.initials: C
authors.lastname: Theiss
authors.forename: Lars
authors.initials: L
authors.lastname: Zimmermann
authors.forename: Bernd
authors.initials: B
authors.lastname: Tillack
authors.forename: Harald H
authors.initials: HH
authors.lastname: Richter
authors.forename: Hui
authors.initials: H
authors.lastname: Tian
authors.forename: David
authors.initials: D
authors.lastname: Stolarek
authors.forename: Thomas
authors.initials: T
authors.lastname: Schneider
authors.forename: Ulrike
authors.initials: U
authors.lastname: Woggon
authors.forename: Hans J
authors.initials: HJ
authors.lastname: Eichler