title: Room-temperature violet luminescence and ultraviolet photodetection of Sb-doped ZnO/Al-doped ZnO homojunction array.
abstract: A Sb-doped ZnO microrod array was fabricated on an Al-doped ZnO thin film by electrodeposition. Strong violet luminescence, originated from free electron-to-acceptor level transitions, was identified by temperature-dependent photoluminescence measurements. This acceptor-related transition was attributed to substitution of Sb dopants for Zn sites, instead of O sites, to form a complex with two Zn vacancies (VZn), the SbZn-2VZn complex. This SbZn-2VZn complex has a lower formation energy and acts as a shallow acceptor which can induce the observed strong violet luminescence. The photoresponsivity of our ZnO p-n homojunction device under a negative bias demonstrated a nearly 40-fold current gain, illustrating that our device is potentially an excellent candidate for photodetector applications in the ultraviolet wavelength region.
authors.affiliation: Department of Physics, National Taiwan University, Taipei 106, Taiwan. drhang@faculty.nsysu.edu.tw.
authors.forename: Wei-Jen
authors.initials: WJ
authors.lastname: Chen
authors.forename: Jen-Kai
authors.initials: JK
authors.lastname: Wu
authors.forename: Jheng-Cyuan
authors.initials: JC
authors.lastname: Lin
authors.forename: Shun-Tsung
authors.initials: ST
authors.lastname: Lo
authors.forename: Huang-De
authors.initials: HD
authors.lastname: Lin
authors.forename: Da-Ren
authors.initials: DR
authors.lastname: Hang
authors.forename: Ming Feng
authors.initials: MF
authors.lastname: Shih
authors.forename: Chi-Te
authors.initials: CT
authors.lastname: Liang
authors.forename: Yuan Huei
authors.initials: YH
authors.lastname: Chang