title: Switching CdSe quantum dot luminescence with a-Si:H.
abstract: Dynamical control of the luminescence of quantum dots is highly important for technology in the field of telecommunication, displays, and photovoltaics. In this work we use an a-Si:H solar cell structure in which CdSe quantum dots are sandwiched. By applying a positive potential over the device, charge carriers generated in the quantum dots are transported to the a-Si:H layer and transformed into electrical energy, changing the luminescence intensity with a switching time lower than 60 ms. This is a promising new step towards using quantum dots in optical switching devices.
authors.affiliation: Debye Institute for Nanomaterials Science, Nanophotonics-Physics of Devices, Utrecht University, Utrecht, The Netherlands. m.divece@uu.nl
authors.forename: M
authors.initials: M
authors.lastname: Di Vece
authors.forename: S N F
authors.initials: SN
authors.lastname: van Duren
authors.forename: D J
authors.initials: DJ
authors.lastname: van den Heuvel
authors.forename: D
authors.initials: D
authors.lastname: Mitoraj
authors.forename: Y
authors.initials: Y
authors.lastname: Kuang
authors.forename: H C
authors.initials: HC
authors.lastname: Gerritsen
authors.forename: R E I
authors.initials: RE
authors.lastname: Schropp