title: High-performance and low-power rewritable SiOx 1 kbit one diode-one resistor crossbar memory array.
abstract: An entire 1-kilobit crossbar device based upon SiOx resistive memories with integrated diodes has been made. The SiOx -based one diode-one resistor device system has promise to satisfy the prerequisite conditions for next generation non-volatile memory applications.
authors.affiliation: Department of Chemistry, Rice University, 6100 Main Street, Houston, Texas 77005, USA; Smalley Institute for Nanoscale Science and Technology, Rice University, 6100 Main Street, Houston, Texas 77005, USA.
authors.forename: Gunuk
authors.initials: G
authors.lastname: Wang
authors.forename: Adam C
authors.initials: AC
authors.lastname: Lauchner
authors.forename: Jian
authors.initials: J
authors.lastname: Lin
authors.forename: Douglas
authors.initials: D
authors.lastname: Natelson
authors.forename: Krishna V
authors.initials: KV
authors.lastname: Palem
authors.forename: James M
authors.initials: JM
authors.lastname: Tour
keywords: non-volatile memory; one diode-one resistor; silicon oxides