title: A high-efficiency low-voltage CMOS rectifier for harvesting energy in implantable devices.
abstract: We present, in this paper, a new full-wave CMOS rectifier dedicated for wirelessly-powered low-voltage biomedical implants. It uses bootstrapped capacitors to reduce the effective threshold voltage of selected MOS switches. It achieves a significant increase in its overall power efficiency and low voltage-drop. Therefore, the rectifier is good for applications with low-voltage power supplies and large load current. The rectifier topology does not require complex circuit design. The highest voltages available in the circuit are used to drive the gates of selected transistors in order to reduce leakage current and to lower their channel on-resistance, while having high transconductance. The proposed rectifier was fabricated using the standard TSMC 0.18 μm CMOS process. When connected to a sinusoidal source of 3.3 V peak amplitude, it allows improving the overall power efficiency by 11% compared to the best recently published results given by a gate cross-coupled-based structure.
authors.affiliation: Electrical Engineering Department, Polystim Neurotechnologies Laboratory, Ecole Polytechnique de Montreal, Montreal, QC H3C 3A7, Canada. saeid.hashemi@polymtl.ca
authors.forename: S Saeid
authors.initials: SS
authors.lastname: Hashemi
authors.forename: Mohamad
authors.initials: M
authors.lastname: Sawan
authors.forename: Yvon
authors.initials: Y
authors.lastname: Savaria
mesh_terms: D001698:Biomedical Engineering; D003201:Computers; D025802:Electric Capacitance; D011211:Electric Power Supplies; D004581:Electronics; D004867:Equipment Design; D006801:Humans; D019736:Prostheses and Implants; D012815:Signal Processing, Computer-Assisted; D014173:Transistors, Electronic; D059015:Wireless Technology