title: Band edge tailoring of InGaAs/AlAsSb coupled double quantum wells for a monolithically integrated all-optical switch.
abstract: We demonstrate a compact all-optical Michelson interferometer (MI) gating switch with monolithic integration of two different bandgap energies. Based on the ion-induced intermixing in InGaAs/AlAsSb coupled double quantum wells, the blueshift of the band edge can be tailored. Through phosphorus ion implantation with a dose of 5 × 10(14) cm(-2) and subsequent annealing at 720 °C for 60 s, an implanted sample can acquire a high transmittance compared with the as-grown one. Meanwhile, the cross-phase modulation (XPM) efficiency of a non-implanted sample undergoing the same annealing process decreases little. An implanted part for signal propagation and a non-implanted section for XPM are thus monolithically integrated for an MI switch by an area-selective manner. Full switching of a π-rad nonlinear phase shift is achieved with pump pulse energy of 5.6 pJ at a 10-GHz repetition rate.
authors.affiliation: Network Photonics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan.
authors.forename: Jijun
authors.initials: J
authors.lastname: Feng
authors.forename: Ryoichi
authors.initials: R
authors.lastname: Akimoto
authors.forename: Shin-ichiro
authors.initials: S
authors.lastname: Gozu
authors.forename: Teruo
authors.initials: T
authors.lastname: Mozume
authors.forename: Toshifumi
authors.initials: T
authors.lastname: Hasama
authors.forename: Hiroshi
authors.initials: H
authors.lastname: Ishikawa