title: Demonstration of a dressed-state phase gate for trapped ions.
abstract: We demonstrate a trapped-ion entangling-gate scheme proposed by Bermudez et al. [Phys. Rev. A 85, 040302 (2012)]. Simultaneous excitation of a strong carrier and a single-sideband transition enables deterministic creation of entangled states. The method works for magnetic field-insensitive states, is robust against thermal excitations, includes dynamical decoupling from qubit dephasing errors, and provides simplifications in experimental implementation compared to some other entangling gates with trapped ions. We achieve a Bell state fidelity of 0.974(4) and identify the main sources of error.
authors.affiliation: National Institute of Standards and Technology, 325 Broadway, Boulder, Colorado 80305, USA. tingrei.tan@nist.gov
authors.forename: T R
authors.initials: TR
authors.lastname: Tan
authors.forename: J P
authors.initials: JP
authors.lastname: Gaebler
authors.forename: R
authors.initials: R
authors.lastname: Bowler
authors.forename: Y
authors.initials: Y
authors.lastname: Lin
authors.forename: J D
authors.initials: JD
authors.lastname: Jost
authors.forename: D
authors.initials: D
authors.lastname: Leibfried
authors.forename: D J
authors.initials: DJ
authors.lastname: Wineland