title: Resistive switching at the nanoscale in the Mott insulator compound GaTa4Se8.
abstract: We study the Mott insulator compound GaTa4Se8 in which we previously discovered an electric-field-induced resistive transition. We show that the resistive switching is associated to the appearance of metallic and super-insulating nanodomains by means of scanning tunneling microscopy/spectroscopy (STM/STS). Moreover, we show that local electronic transitions can be controlled at the nanoscale at room temperature using the electric field of the STM tip. This opens the way for possible applications in resistive random access memories (RRAM) devices.
authors.affiliation: Institut des Nanosciences de Paris, Université Pierre et Marie Curie, CNRS UMR 7588, Paris, France.
authors.forename: Vincent
authors.initials: V
authors.lastname: Dubost
authors.forename: Tristan
authors.initials: T
authors.lastname: Cren
authors.forename: Cristian
authors.initials: C
authors.lastname: Vaju
authors.forename: Laurent
authors.initials: L
authors.lastname: Cario
authors.forename: Benoît
authors.initials: B
authors.lastname: Corraze
authors.forename: Etienne
authors.initials: E
authors.lastname: Janod
authors.forename: François
authors.initials: F
authors.lastname: Debontridder
authors.forename: Dimitri
authors.initials: D
authors.lastname: Roditchev