title: Controlled assembly of graphene-capped nickel, cobalt and iron silicides.
abstract: The unique properties of graphene have raised high expectations regarding its application in carbon-based nanoscale devices that could complement or replace traditional silicon technology. This gave rise to the vast amount of researches on how to fabricate high-quality graphene and graphene nanocomposites that is currently going on. Here we show that graphene can be successfully integrated with the established metal-silicide technology. Starting from thin monocrystalline films of nickel, cobalt and iron, we were able to form metal silicides of high quality with a variety of stoichiometries under a Chemical Vapor Deposition grown graphene layer. These graphene-capped silicides are reliably protected against oxidation and can cover a wide range of electronic materials/device applications. Most importantly, the coupling between the graphene layer and the silicides is rather weak and the properties of quasi-freestanding graphene are widely preserved.
authors.affiliation: St. Petersburg State University, Ulyanovskaya str. 1, St. Petersburg 198504, Russia.
authors.forename: O
authors.initials: O
authors.lastname: Vilkov
authors.forename: A
authors.initials: A
authors.lastname: Fedorov
authors.forename: D
authors.initials: D
authors.lastname: Usachov
authors.forename: L V
authors.initials: LV
authors.lastname: Yashina
authors.forename: A V
authors.initials: AV
authors.lastname: Generalov
authors.forename: K
authors.initials: K
authors.lastname: Borygina
authors.forename: N I
authors.initials: NI
authors.lastname: Verbitskiy
authors.forename: A
authors.initials: A
authors.lastname: Grüneis
authors.forename: D V
authors.initials: DV
authors.lastname: Vyalikh