title: Influence of carbon alloying on the thermal stability and resistive switching behavior of copper-telluride based CBRAM cells.
abstract: We report the improved thermal stability of carbon alloyed Cu0.6Te0.4 for resistive memory applications. Copper-tellurium-based memory cells show enhanced switching behavior, but the complex sequence of phase transformations upon annealing is disadvantageous for integration in a device. We show that addition of about 40 at % carbon to the Cu-telluride layer results in an amorphous material up to 360 °C. This material was then integrated in a TiN/Cu0.6Te0.4-C/Al2O3/Si resistive memory cell, and compared to pure Cu0.6Te0.4. Very attractive endurance (up to 1 × 10(3) cycles) and retention properties (up to 1 × 10(4) s at 85 °C) are observed. The enhanced thermal stability and good switching behavior make this material a promising candidate for integration in memory devices.
authors.affiliation: Department of Solid State Sciences, Universiteit Gent, Krijgslaan 281 (S1), 9000 Gent, Belgium. Wouter.Devulder@UGent.be
authors.forename: Wouter
authors.initials: W
authors.lastname: Devulder
authors.forename: Karl
authors.initials: K
authors.lastname: Opsomer
authors.forename: Felix
authors.initials: F
authors.lastname: Seidel
authors.forename: Attilio
authors.initials: A
authors.lastname: Belmonte
authors.forename: Robert
authors.initials: R
authors.lastname: Muller
authors.forename: Bob
authors.initials: B
authors.lastname: De Schutter
authors.forename: Hugo
authors.initials: H
authors.lastname: Bender
authors.forename: Wilfried
authors.initials: W
authors.lastname: Vandervorst
authors.forename: Sven
authors.initials: S
authors.lastname: Van Elshocht
authors.forename: Malgorzata
authors.initials: M
authors.lastname: Jurczak
authors.forename: Ludovic
authors.initials: L
authors.lastname: Goux
authors.forename: Christophe
authors.initials: C
authors.lastname: Detavernier