title: Dynamic evolution of conducting nanofilament in resistive switching memories.
abstract: Resistive random access memory (ReRAM) has been considered the most promising next-generation nonvolatile memory. In recent years, the switching behavior has been widely reported, and understanding the switching mechanism can improve the stability and scalability of devices. We designed an innovative sample structure for in situ transmission electron microscopy (TEM) to observe the formation of conductive filaments in the Pt/ZnO/Pt structure in real time. The corresponding current-voltage measurements help us to understand the switching mechanism of ZnO film. In addition, high-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) have been used to identify the atomic structure and components of the filament/disrupted region, determining that the conducting paths are caused by the conglomeration of zinc atoms. The behavior of resistive switching is due to the migration of oxygen ions, leading to transformation between Zn-dominated ZnO(1-x) and ZnO.
authors.affiliation: Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu City, Taiwan.
authors.forename: Jui-Yuan
authors.initials: JY
authors.lastname: Chen
authors.forename: Cheng-Lun
authors.initials: CL
authors.lastname: Hsin
authors.forename: Chun-Wei
authors.initials: CW
authors.lastname: Huang
authors.forename: Chung-Hua
authors.initials: CH
authors.lastname: Chiu
authors.forename: Yu-Ting
authors.initials: YT
authors.lastname: Huang
authors.forename: Su-Jien
authors.initials: SJ
authors.lastname: Lin
authors.forename: Wen-Wei
authors.initials: WW
authors.lastname: Wu
authors.forename: Lih-Juann
authors.initials: LJ
authors.lastname: Chen