title: Fabrication of spatially confined complex oxides.
abstract: Complex materials such as high Tc superconductors, multiferroics, and colossal magnetoresistors have electronic and magnetic properties that arise from the inherent strong electron correlations that reside within them. These materials can also possess electronic phase separation in which regions of vastly different resistive and magnetic behavior can coexist within a single crystal alloy material. By reducing the scale of these materials to length scales at and below the inherent size of the electronic domains, novel behaviors can be exposed. Because of this and the fact that spin-charge-lattice-orbital order parameters each involve correlation lengths, spatially reducing these materials for transport measurements is a critical step in understanding the fundamental physics that drives complex behaviors. These materials also offer great potential to become the next generation of electronic devices (1-3). Thus, the fabrication of low dimensional nano- or micro-structures is extremely important to achieve new functionality. This involves multiple controllable processes from high quality thin film growth to accurate electronic property characterization. Here, we present fabrication protocols of high quality microstructures for complex oxide manganite devices. Detailed descriptions and required equipment of thin film growth, photo-lithography, and wire-bonding are presented.
authors.affiliation: Materials Science and Technology Division, Oak Ridge National Laboratory.
authors.forename: Hangwen
authors.initials: H
authors.lastname: Guo
authors.forename: Thomas Z
authors.initials: TZ
authors.lastname: Ward
mesh_terms: D007811:Lanthanum / Q000737:chemistry; D010087:Oxides / Q000737:chemistry*; D010781:Photography / Q000295:instrumentation*; D013324:Strontium / Q000737:chemistry; D014025:Titanium / Q000737:chemistry
chemical_list: D010087:Oxides; C103829:lanthanum oxide; D007811:Lanthanum; D014025:Titanium; C119252:strontium titanium oxide; D013324:Strontium