title: A PN-type quantum barrier for InGaN/GaN light emitting diodes.
abstract: In this work, InGaN/GaN light-emitting diodes (LEDs) with PN-type quantum barriers are comparatively studied both theoretically and experimentally. A strong enhancement in the optical output power is obtained from the proposed device. The improved performance is attributed to the screening of the quantum confined Stark effect (QCSE) in the quantum wells and improved hole transport across the active region. In addition, the enhanced overall radiative recombination rates in the multiple quantum wells and increased effective energy barrier height in the conduction band has substantially suppressed the electron leakage from the active region. Furthermore, the electrical conductivity in the proposed devices is improved. The numerical and experimental results are in excellent agreement and indicate that the PN-type quantum barriers hold great promise for high-performance InGaN/GaN LEDs.
authors.affiliation: LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore.
authors.forename: Zi-Hui
authors.initials: ZH
authors.lastname: Zhang
authors.forename: Swee Tiam
authors.initials: ST
authors.lastname: Tan
authors.forename: Yun
authors.initials: Y
authors.lastname: Ji
authors.forename: Wei
authors.initials: W
authors.lastname: Liu
authors.forename: Zhengang
authors.initials: Z
authors.lastname: Ju
authors.forename: Zabu
authors.initials: Z
authors.lastname: Kyaw
authors.forename: Xiao Wei
authors.initials: XW
authors.lastname: Sun
authors.forename: Hilmi Volkan
authors.initials: HV
authors.lastname: Demir